CN104155472A - Hot-film wind speed and wind direction sensor and preparation method thereof - Google Patents
Hot-film wind speed and wind direction sensor and preparation method thereof Download PDFInfo
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- CN104155472A CN104155472A CN201410344604.8A CN201410344604A CN104155472A CN 104155472 A CN104155472 A CN 104155472A CN 201410344604 A CN201410344604 A CN 201410344604A CN 104155472 A CN104155472 A CN 104155472A
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Abstract
The invention relates to the technical field of wind speed and wind direction detection, and discloses a hot-film wind speed and wind direction sensor. The hot-film wind speed and wind direction sensor comprises a substrate, an insulating layer, temperature measuring elements and a heating element, wherein a porous silicon thermal insulating layer with certain depth is formed on the upper surface of the substrate; the upper surface of the porous silicon thermal insulating layer is aligned with the upper surface of the substrate; a silicon dioxide film layer is deposited on the upper surface of the porous silicon thermal insulating layer and the surfaces of the hole walls; the insulating layer is coated on the upper surface of the substrate; the temperature measuring elements and the heating element are arranged on the upper surface of the insulating layer, and positioned corresponding to the area over the porous silicon thermal insulating layer. The invention further discloses a preparation method of the hot-film wind speed and wind direction sensor. The preparation method comprises the steps of forming the porous silicon thermal insulating layer by corroding the upper surface of a substrate I of a silicon chip, forming the silicon dioxide film layer by depositing on the upper surface of the porous silicon thermal insulating layer and the surfaces of the hole walls, and forming the temperature measuring elements and the heating element by conducting photoetching on a polycrystalline silicon layer on the surface of the insulating layer. According to the sensor prepared by the preparation method, the measuring power consumption can be reduced, the response time of the sensor can be shortened, and the sensitivity of a chip can be improved.
Description
Technical field
The present invention relates to wind speed and direction detection technique field, relate in particular to a kind of hotting mask wind speed wind direction sensor with porous silicon thermofin and preparation method thereof.
Background technology
Wind energy is the emphasis that resources open is utilized as the energy of cleanliness without any pollution and sustainable development always.Wind speed, wind direction are the important parameters of the weather condition of reaction wind effect, are widely used in fields such as Aero-Space, industrial and agricultural production, weather forecast, climatic analysises, and the production of environmental monitoring, artificial atmosphere and industrial or agricultural is had to material impact.Only have and accurately measure soon wind speed and direction, just can better utilize wind energy, therefore wind speed and direction is measured and is had important practical significance.
At present, can utilize wind speed wind direction sensor to come measuring wind and wind direction.The sensing element of air velocity transducer is three glasss of wind assemblies, is made up of three carbon fiber vanes and glass stand.Converter is multiple tooth revolving cup and slit optocoupler.In the time that vane is subject to horizontal wind-force effect and rotates, the rotation by axle revolving cup in slit optocoupler, the signal of output frequency.And the transducer of wind transducer is code-disc and photoelectric subassembly.While rotation when the variation of weathercock box haul, drive the rotation of code-disc in photoelectric subassembly gap by axle, the photosignal correspondence of generation is the Gray code output of wind direction at that time.The transducer of sensor can adopt accurate conductive plastic potentiometer, thus the voltage signal changing at potentiometer movable end output.The price of this wind speed wind direction sensor is relatively costly, and several thousand to several ten thousand are not etc., and the price of the integrated weather station of some combination wind speed wind direction sensors can be up to millions of.In actual applications, research and development volume wind speed wind direction sensor little, lightweight, cheap, that be applicable to public's application is extremely urgent.
Hot type wind direction and wind velocity sensor is to test in "on" position lower sensor the resistance variations because of the cooling generation of wind, tests thus wind speed.Except carry easy and convenient, its cost-performance, than high, is used widely as the standardized product of wind gage.The sub-prime of hot type wind gage can use platinum line, electroheat pair, semiconductor etc.
In the last few years, MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical System) as a kind of advanced person's manufacturing technology platform, by microcircuit and micromechanics by functional requirement integrated on chip, size is controlled at millimeter or micron order conventionally, has related to physical each branches such as power under the microscale in subjects fields such as being applied in microelectronics, material, mechanics, chemistry, mechanics, electricity, light, magnetic, sound, surface.The main contents of microelectric technique have: oxide layer growth, photo etched mask are made, doping is selected in photoetching (shielding diffusion, Implantation), film (layer) growth, line making etc.The main contents of micro-processing technology have: the LIGA (Lithographie of the micro-processing of silicon face and the micro-processing of silicon body (anisotropic etch, sacrifice layer) technology, wafer bonding techniques, making high aspect ratio structure, Galanoformung, Abformung) technology etc.Utilize the microelectric technique can manufacturing integration circuit and many sensors.Micro-processing technology is well suited for makes some pressure transducer, acceleration transducer, Micropump, micro-valve, micro-groove, micro-reaction chamber, microactrator, micromechanics etc.
Hot type wind speed wind direction sensor based on MEMS process technology is the variation that the heat that produces of the heating element by it and external environment are carried out heat interchange and respond to wind, what utilize is forced convection effect, and sensor overall power consumption aspect is except comprising the thermal loss causing due to forced convection effect, also comprise the power consumption penalty causing due to heat-conduction effect, this a part of power consumption cuts little ice for the perception of wind, therefore how to reduce power loss that hot type wind speed wind direction sensor causes due to heat-conduction effect and become a large problem of sensor design.In addition, the high heat conductance of silicon substrate also makes the power consumption of this class sensor larger, and sensitivity is lower, and the application of product has been subject to a lot of restrictions.
Summary of the invention
Technical matters to be solved by this invention is, a kind of hotting mask wind speed wind direction sensor and preparation method thereof is provided, can be by be provided with porous silicon thermofin in substrate, carry out the power consumption of wind speed and direction while measuring thereby reduce sensor, and guarantee the accuracy of measuring.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is:
A kind of hotting mask wind speed wind direction sensor, comprising: substrate, insulation course, temperature element and heating element; The upper surface of described substrate is formed with the porous silicon thermofin of certain depth, and the upper surface of described porous silicon thermofin and the upper surface of described substrate concordant; The upper surface of described porous silicon thermofin and hole wall surface are formed with silica membrane layer; Described insulation course pastes in described substrate top surface; Described temperature element and heating element are arranged at described insulation course upper surface, and the two is monocrystalline silicon material; Described temperature element and heating element are positioned at the corresponding region directly over described porous silicon thermofin.
Preferably, described substrate is made up of 100 crystal orientation monocrystalline silicon.
Preferably, the thickness of described porous silicon thermofin is 20-100 μ m; Described silica membrane layer thickness is 50-200nm.
Described insulation course comprises silicon dioxide layer and silicon nitride layer; Described silicon dioxide layer pastes the upper surface at described substrate, and described silicon nitride layer covers the upper surface of described silicon dioxide layer.
Between described temperature element and heating element, be provided with ICP groove.
A preparation method for hotting mask wind speed wind direction sensor, is characterized in that, this preparation method comprises the following steps:
S1: choose silicon chip as substrate;
S2: prepare certain thickness porous silicon thermofin with the method for corrosion in described substrate top surface;
S3: the upper surface of described porous silicon thermofin and hole wall surface are formed with silica membrane layer;
S4: adopt the method for vapour deposition, prepare insulation course at the upper surface of described substrate;
S5: adopt the method for vapour deposition, form polysilicon layer at the upper surface of described insulation course, and make and form heating element and temperature element by polysilicon layer described in photoetching;
S6: adopt ICP Development of Silicon Deep Trench Etching Process, make between described temperature element and heating element and form ICP groove;
S7: adopt the method for magnetron sputtering, form metal level in the upper surface sputter of described polysilicon layer, and by carrying out photoetching, etching, formation metal electrode removes photoresist;
S8: adopt the method for vapour deposition, prepare certain thickness silicon carbide layer on step S7 gained upper surface, by carrying out photoetching, etching, formation pressure welding area removes photoresist.
Preferably, described substrate is made up of 100 crystal orientation monocrystalline silicon pieces.
Further, prepare certain thickness porous silicon thermofin in described step S2, its concrete steps are: first at described substrate top surface gluing, then with litho machine to silicon chip photoetching remove photoresist, then be formed by etching porous silicon structure, as thermofin; The concrete grammar that described corrosion forms porous silicon structure is electrochemical method, chemical corrosion method, etching method or the hydrothermal etching in wet etching, or is the plasma etching method in dry etching; The thickness of described porous silicon thermofin is 20-100 μ m.
Wherein, the concrete grammar of preparing silica membrane layer in described step S3 is to adopt thermal oxidation technology to form silica membrane layer in upper surface and the hole wall surface oxidation of described porous silicon thermofin; Described silica membrane layer thickness is 50-200nm.
The concrete steps of preparing insulation course in described step S4 are: first prepare silicon dioxide layer at the upper surface of described substrate, then adopt the method for chemical vapor deposition, prepare silicon nitride layer at the upper surface of described silicon dioxide layer.
Implement the present invention and there is following beneficial effect:
1. power consumption is little.The existing heat-flow sensor that is based upon machining, temperature element and heating element are set directly on silicon substrate, or are arranged on the top, hole of substrate.The former makes sensor heat more to substrate transfer due to the high thermal conductivity of silicon substrate, and temperature rise power is larger, and the sensitivity of sensor is lower; Though the latter has solved sensor power problem, the existence in hole makes sensor construction intensity comparatively fragile, more easily damages.Sensor prepared by the present invention, by porous silicon thermofin is set in substrate, makes the heat transmitting from substrate top cannot continue downward diffusion at porous silicon thermofin, thereby has realized hot isolation; The silica membrane layer forming on the hole wall of porous silicon layer mesoporosity is by means of further having ensured effect of heat insulation lower than the thermal conductivity of monocrystalline silicon.Simultaneously, because temperature element and heating element are all arranged on the silicon nitride dielectric layer directly over porous silicon thermofin, silicon dioxide, silicon nitride dielectric layer are also conducive to reduce heat and spread downwards.Therefore, in the course of the work, heat is smaller to substrate diffusion for sensor of the present invention, and sensor is not subject to the impact of substrate high heat conductance substantially.This has reduced power consumption in improving transducer sensitivity.
2. structural stability is good.Sensor of the present invention, substrate surface unslotted, compared with the sensor of substrate surface fluting, structural stability is good, not fragile, is also more conducive to postchannel process and encapsulation.
Highly sensitive, reaction is fast.Sensor temperature element of the present invention and heating element adopt a photoetching process moulding, have avoided technologic alignment issues, and machining precision is high.This sensor surface is sense wind face, and heat is mainly propagated in air, and area be only several square millimeters, and therefore highly sensitive, response soon.
Brief description of the drawings
Fig. 1 is the sectional view of hotting mask wind speed wind direction sensor involved in the present invention;
Fig. 2 is the structural representation of hotting mask wind speed wind direction sensor preparation technology completing steps S1 involved in the present invention;
Fig. 3 is the structural representation of hotting mask wind speed wind direction sensor preparation technology completing steps S2 involved in the present invention;
Fig. 4 is the structural representation of hotting mask wind speed wind direction sensor preparation technology completing steps S3 involved in the present invention;
Fig. 5 is the structural representation of hotting mask wind speed wind direction sensor preparation technology completing steps S4 involved in the present invention;
Fig. 6 is the structural representation that forms polysilicon layer in hotting mask wind speed wind direction sensor preparation technology completing steps S5 involved in the present invention;
Fig. 7 is the structural representation of photoetching forming element in hotting mask wind speed wind direction sensor preparation technology completing steps S5 involved in the present invention;
Fig. 8 is the structural representation of hotting mask wind speed wind direction sensor preparation technology completing steps S6 involved in the present invention;
Fig. 9 is the structural representation that in hotting mask wind speed wind direction sensor preparation technology completing steps S7 involved in the present invention, sputter forms metal level;
Figure 10 is the structural representation that in hotting mask wind speed wind direction sensor preparation technology completing steps S7 involved in the present invention, etching forms metal electrode;
Reference numeral is expressed as: 1-substrate, 2-insulation course, 3-temperature element, 4-heating element, 5-porous silicon thermofin, 6-silicon dioxide layer, 7-silicon nitride layer, 8-metal electrode, 9-silicon carbide layer, 10-polysilicon layer, 11-metal level, 12-hole wall, 13-silica membrane layer, 14-ICP groove.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail.
A kind of hotting mask wind speed wind direction sensor disclosed by the invention, as shown in Figure 1, comprising: substrate 1, insulation course 2, temperature element 3 and heating element 4.Described substrate 1 is that 100 crystal orientation monocrystalline silicon are made; The upper surface of described substrate 1 is formed with porous silicon thermofin 5, and described porous silicon thermofin 5 upper surfaces are concordant with substrate 1 upper surface, and the thickness of described porous silicon thermofin 5 is 60 μ m.The upper surface of described porous silicon thermofin 5 and its hole wall 12 surfaces are formed with silica membrane layer 13, and silica membrane layer 13 thickness are 100nm; Described temperature element 3 and heating element 4 are positioned at the region directly over porous silicon thermofin 5; Between described temperature element 3 and heating element 4, be provided with ICP groove 14.
Described insulation course 2 pastes at substrate 1 upper surface, and described insulation course 2 comprises silicon dioxide layer 6 and silicon nitride layer 7; Described silicon dioxide layer 6 pastes the upper surface at described substrate 1, and described silicon nitride layer 7 covers the upper surface of described silicon dioxide layer 6.
Described temperature element 3 and heating element 4 are arranged at the upper surface of insulation course 2, and the two is monocrystalline silicon material, and the polysilicon layer 10 that is deposited on insulation course 2 surfaces by photoetching is made formation.Can utilize its intrinsic Seebeck effect; Compared with metallic resistance, also have highly sensitively, be not subject to dry advantage of scratching; Polysilicon material add thermal reactor as heating element, the applying bias of needs while or not platinum resistor temperature measuring, thereby can not produce the output signal skew causing because of bias voltage, makes to measure and becomes simple and easy to do.Described temperature element 3 is four, lay respectively at the periphery of described heating element 4, each described temperature element 3 equates to the distance of described heating element 4, and centered by described heating element 4 symmetrically, the distance of the relatively described substrate of adjacent described temperature element 31 end all equates relative described temperature element 3.
Accordingly, the invention also discloses the preparation method of this hotting mask wind speed wind direction sensor, this preparation method comprises the following steps:
S1: as shown in Figure 2, choose 100 crystal orientation monocrystalline silicon pieces as substrate 1;
S2: as shown in Figure 3, on described substrate 1 top taking corrosion method prepare the porous silicon thermofin 5 of thickness as 60 μ m, its concrete steps are: first at described substrate 1 upper surface gluing, then with litho machine to silicon chip photoetching remove photoresist, be formed by etching again porous silicon structure, as thermofin; Described corrosion forms the concrete grammar of porous silicon structure to be prepared for adopting Zener breakdown monocrystalline silicon to produce hole, and corrosive liquid is 3%HF solution, and its Control of Voltage is between 3V; Utilize electrochemical method to form porous silicon at polishing monocrystalline silicon sheet surface under different preparation conditions, can characterize by atomic force microscope and field emission scanning electron microscope etc. the pattern of porous silicon surface, thereby by control current density control the silicon column diameter of generation, highly, distribution density, for later stage silicon dioxide film growth is established certain architecture basics;
S3: as shown in Figure 4, the upper surface of described porous silicon thermofin 5 and hole wall 12 surfaces are formed with silica membrane layer 13; The concrete grammar of preparing silica membrane layer 13 is to adopt upper surface and the hole wall surface oxidation of thermal oxidation technology at described porous silicon thermofin 5, forms silica membrane layer 13; Actual conditions is: silicon chip is used to thermal oxidation technology annealing, and its temperature is 1000 DEG C, and the time is 7 hours;
S4: as shown in Figure 5, adopt the method for chemical vapor deposition, prepare insulation course 2 at the upper surface of described substrate 1; Concrete steps are: first prepare silicon dioxide layer 6 at the upper surface of described substrate 1, then adopt the method for chemical vapor deposition, prepare silicon nitride layer 7 at the upper surface of described silicon dioxide layer 6;
S5: as shown in Figure 6, adopt the method for chemical vapor deposition, form polysilicon layer 10 at the upper surface of described insulation course 2; As shown in Figure 7, make and form heating element 4 and temperature element 3 by polysilicon layer described in photoetching 10;
S6: as shown in Figure 8, adopt ICP Development of Silicon Deep Trench Etching Process, make between described temperature element 3 and heating element 4 and form ICP groove 14; Method therefor is specially inductively coupled plasma (ICP) Development of Silicon Deep Trench Etching Process;
S7: as shown in Figure 9, adopt the method for magnetron sputtering, form metal level 11 in the upper surface sputter of described polysilicon layer; As shown in figure 10, by carrying out photoetching, etching, removing photoresist forms metal electrode 8;
S8: as shown in Figure 1, adopt the method for vapour deposition, prepare certain thickness silicon carbide layer 9 on step S7 gained upper surface, by carrying out photoetching, etching, formation pressure welding area removes photoresist.
Another embodiment of the invention:
A kind of hotting mask wind speed wind direction sensor disclosed by the invention, as shown in Figure 1, comprising: substrate 1, insulation course 2, temperature element 3 and heating element 4.Described substrate 1 is that 100 crystal orientation monocrystalline silicon are made; The upper surface of described substrate 1 is formed with porous silicon thermofin 5, and described porous silicon thermofin 5 upper surfaces are concordant with substrate 1 upper surface, and the thickness of described porous silicon thermofin 5 is 60 μ m.The upper surface of described porous silicon thermofin 5 and hole wall 12 surfaces are formed with silica membrane layer 13, and silica membrane layer 13 thickness are 100nm; Described temperature element 3 and heating element 4 are positioned at the region directly over porous silicon thermofin 5; Between described temperature element 3 and heating element 4, be provided with ICP groove 14.
Described insulation course 2 pastes the upper surface at substrate 1, and described insulation course 2 comprises silicon dioxide layer 6 and silicon nitride layer 7; Described silicon dioxide layer 6 pastes the upper surface at described substrate 1, and described silicon nitride layer 7 covers the upper surface of described silicon dioxide layer 6.
Described temperature element 3 and heating element 4 are arranged at the upper surface of insulation course 2, and the two is monocrystalline silicon material, and the polysilicon layer 10 that is deposited on insulation course 2 surfaces by photoetching is made formation.Can utilize its intrinsic Seebeck effect; Compared with metallic resistance, also have highly sensitively, be not subject to dry advantage of scratching; Polysilicon material add thermal reactor as heating element, the applying bias of needs while or not platinum resistor temperature measuring, thereby can not produce the output signal skew causing because of bias voltage, makes to measure and becomes simple and easy to do.Described temperature element 3 is four, lay respectively at the periphery of described heating element 4, each described temperature element 3 equates to the distance of described heating element 4, and centered by described heating element 4 symmetrically, the distance of the relatively described substrate of adjacent described temperature element 31 end all equates relative described temperature element 3.
Accordingly, the invention also discloses the preparation method of this hotting mask wind speed wind direction sensor, this preparation method comprises the following steps:
S1: as shown in Figure 2, choose 100 crystal orientation monocrystalline silicon pieces as substrate 1;
S2: as shown in Figure 3, on described substrate 1 top taking corrosion method prepare the porous silicon thermofin 5 of thickness as 60 μ m, its concrete steps are: first at described substrate 1 upper surface gluing, then with litho machine to silicon chip photoetching remove photoresist, be formed by etching again porous silicon structure, as thermofin; The concrete grammar that described corrosion forms porous silicon structure is the plasma etching method in dry etching;
S3: as shown in Figure 4, the upper surface of described porous silicon thermofin 5 and hole wall 12 surfaces are formed with silica membrane layer 13; The concrete grammar of preparing silica membrane layer 13 is to adopt upper surface and the hole wall surface oxidation of thermal oxidation technology at described porous silicon thermofin 5, forms silica membrane layer 13; Actual conditions is: silicon chip is used to thermal oxidation technology annealing, and its temperature is 1000 DEG C, and the time is 7 hours;
S4: as shown in Figure 5, adopt the method for chemical vapor deposition, prepare insulation course 2 at the upper surface of described substrate 1; Concrete steps are: first prepare silicon dioxide layer 6 at the upper surface of described substrate 1, then adopt the method for chemical vapor deposition, prepare silicon nitride layer 7 at the upper surface of described silicon dioxide layer 6;
S5: as shown in Figure 6, adopt the method for chemical vapor deposition, form polysilicon layer 10 at the upper surface of described insulation course 2; As shown in Figure 7, make and form heating element 4 and temperature element 3 by polysilicon layer described in photoetching 10;
S6: as shown in Figure 8, adopt ICP Development of Silicon Deep Trench Etching Process, make between described temperature element 3 and heating element 4 and form ICP groove 14; Method therefor is specially inductively coupled plasma (ICP) Development of Silicon Deep Trench Etching Process;
S7: as shown in Figure 9, adopt the method for magnetron sputtering, form metal level 11 in the upper surface sputter of described polysilicon layer; As shown in figure 10, by carrying out photoetching, etching, removing photoresist forms metal electrode 8;
S8: as shown in Figure 1, adopt the method for vapour deposition, prepare certain thickness silicon carbide layer 9 on step S7 gained upper surface, by carrying out photoetching, etching, formation pressure welding area removes photoresist.
Sensor of the present invention is the hotting mask wind speed wind direction sensor based on MEMS processing and fabricating, especially adopts porous silicon realize heat insulation and adopt polysilicon to make the hotting mask wind speed wind direction sensor of heating element and temperature element.Sensor of the present invention, by porous silicon thermofin is set in substrate, makes the heat transmitting from substrate top cannot continue downward diffusion at porous silicon thermofin, thereby has realized hot isolation; The silica membrane layer forming on the hole wall of porous silicon layer mesoporosity is by means of further having ensured effect of heat insulation lower than the thermal conductivity of monocrystalline silicon.Simultaneously, because temperature element and heating element are all arranged on the silicon nitride dielectric layer directly over porous silicon thermofin, insulation course is also conducive to reduce heat and spreads downwards.Thus, in the course of the work, heat is smaller to substrate diffusion for sensor of the present invention, and sensor is not subject to the impact of substrate high heat conductance substantially.This has reduced power consumption in improving transducer sensitivity.Adopt polysilicon to make heating element and temperature element, the thermometric that makes temperature element is the intrinsic Seebeck effect based on polycrystalline silicon material, this thermometric mode is highly sensitive except having, be not subject to dry advantage of scratching, also unlike platinum resistor temperature measuring, need applying bias, thereby can not produce the output signal skew causing because of bias voltage, make measurement become simple.In addition, the symmetrical structure design of Two dimensional Distribution makes sensor can obtain two groups of mutually orthogonal measured temperatures simultaneously, can calculate accordingly the information of wind speed and direction.
Implement the embodiment of the present invention, there is following beneficial effect:
1. power consumption is little.The existing heat-flow sensor that is based upon machining, temperature element and heating element are set directly on silicon substrate, or be arranged on above the hole of substrate, the former is due to the high thermal conductivity of silicon substrate, make sensor heat more to substrate transfer, temperature rise power is larger, and the sensitivity of sensor is lower; Though the latter has solved sensor power problem, the existence in hole makes sensor construction intensity comparatively fragile, more easily damages.The present invention prepare sensor, by porous silicon thermofin is set in substrate, makes the heat transmitting from substrate top cannot continue downward diffusion at porous silicon thermofin, thereby realized hot isolation; The silica membrane layer forming on the hole wall of porous silicon layer mesoporosity is by means of further having ensured effect of heat insulation lower than the thermal conductivity of monocrystalline silicon.Simultaneously, because temperature element and heating element are all arranged on the silicon nitride dielectric layer directly over porous silicon thermofin, silicon dioxide, silicon nitride dielectric layer are also conducive to reduce heat and spread downwards.Therefore, in the course of the work, heat is smaller to substrate diffusion for sensor of the present invention, and sensor is not subject to the impact of substrate high heat conductance substantially.This has reduced power consumption in improving transducer sensitivity.
2. structural stability is good.Sensor of the present invention, substrate surface unslotted, compared with the sensor of substrate surface fluting, structural stability is good, not fragile, is also more conducive to postchannel process and encapsulation.
Highly sensitive, reaction is fast.Sensor temperature element of the present invention and heating element adopt a photoetching process moulding, have avoided technologic alignment issues, and machining precision is high.This sensor surface is sense wind face, and heat is mainly propagated in air, and area be only several square millimeters, and therefore highly sensitive, response soon.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a hotting mask wind speed wind direction sensor, is characterized in that, comprising: substrate (1), insulation course (2), temperature element (3) and heating element (4); The upper surface of described substrate (1) is formed with the porous silicon thermofin (5) of certain depth, and the upper surface of described porous silicon thermofin (5) is concordant with the upper surface of described substrate (1); The upper surface of described porous silicon thermofin (5) and hole wall (12) surface are formed with silica membrane layer (13); Described insulation course (2) pastes at described substrate (1) upper surface; Described temperature element (3) and heating element (4) are arranged at described insulation course (2) upper surface, and the two is monocrystalline silicon material; Described temperature element (3) and heating element (4) are positioned at corresponding region directly over described porous silicon thermofin (5).
2. hotting mask wind speed wind direction sensor according to claim 1, is characterized in that, described substrate (1) is made up of 100 crystal orientation monocrystalline silicon.
3. hotting mask wind speed wind direction sensor according to claim 1, is characterized in that, the thickness of described porous silicon thermofin (5) is 20-100 μ m; The thickness of described silica membrane layer (13) is 50-200nm.
4. according to the hotting mask wind speed wind direction sensor described in claim 1-3 any one, it is characterized in that, described insulation course (2) comprises silicon dioxide layer (6) and silicon nitride layer (7); Described silicon dioxide layer (6) pastes the upper surface in described substrate (1), and described silicon nitride layer (7) covers the upper surface of described silicon dioxide layer (6).
5. hotting mask wind speed wind direction sensor according to claim 1, is characterized in that, between described temperature element (3) and heating element (4), is provided with ICP groove (14).
6. a preparation method for hotting mask wind speed wind direction sensor, is characterized in that, this preparation method comprises the following steps:
S1: choose silicon chip as substrate (1);
S2: the upper surface at described substrate (1) is prepared certain thickness porous silicon thermofin (5) with the method for corrosion;
S3: the upper surface of described porous silicon thermofin (5) and hole wall (12) surface form silica membrane layer (13);
S4: adopt the method for vapour deposition, prepare insulation course (2) at the upper surface of described substrate (1);
S5: the method that adopts vapour deposition, upper surface at described insulation course (2) forms polysilicon layer (10), and is made and formed heating element (4) and temperature element (3) by polysilicon layer described in photoetching (10).
7. the preparation method of hotting mask wind speed wind direction sensor according to claim 6, is characterized in that, described preparation method is further comprising the steps of:
S6: adopt ICP Development of Silicon Deep Trench Etching Process, make between described temperature element (3) and heating element (4) and form ICP groove (14);
S7: adopt the method for magnetron sputtering, form metal level (11) in the upper surface sputter of described polysilicon layer, and by carrying out photoetching, etching, removing photoresist forms metal electrode (8);
S8: adopt the method for vapour deposition, prepare certain thickness silicon carbide layer (9) on step S7 gained upper surface, by carrying out photoetching, etching, formation pressure welding area removes photoresist.
8. according to the preparation method of the hotting mask wind speed wind direction sensor described in claim 6 or 7, it is characterized in that, described substrate (1) is made up of 100 crystal orientation monocrystalline silicon pieces.
9. the preparation method of hotting mask wind speed wind direction sensor according to claim 6, it is characterized in that, in described step S2, be prepared with certain thickness porous silicon thermofin (5), its concrete steps are: first at described substrate (1) upper surface gluing, then with litho machine to silicon chip photoetching remove photoresist, be formed by etching again porous silicon structure, as thermofin; The concrete grammar that described corrosion forms porous silicon structure is electrochemical method, chemical corrosion method, etching method or the hydrothermal etching in wet etching, or is the plasma etching method in dry etching; The thickness of described porous silicon thermofin (5) is 20-100 μ m; In described step S3, prepare the concrete grammar of silica membrane layer (13) for adopting thermal oxidation technology to form silica membrane layer (13) at upper surface and hole wall (12) surface oxidation of described porous silicon thermofin (5); Described silica membrane layer (13) thickness is 50-200nm.
10. according to the preparation method of the hotting mask wind speed wind direction sensor described in claim 6 or 7, it is characterized in that, the concrete steps of preparing insulation course in described step S4 are: first prepare silicon dioxide layer (6) at the upper surface of described substrate (1), adopt again the method for chemical vapor deposition, prepare silicon nitride layer (7) at the upper surface of described silicon dioxide layer (6).
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| CN104977425A (en) * | 2015-06-19 | 2015-10-14 | 东南大学 | Wind measurement sensor chip structure and method of manufacturing same |
| CN105806430A (en) * | 2016-04-08 | 2016-07-27 | 东南大学 | Two-dimensional film gas flow sensor based on MEMS technology and processing method thereof |
| CN106290972A (en) * | 2016-07-28 | 2017-01-04 | 无锡信大气象传感网科技有限公司 | A kind of Anti-freezing anemoclinograph |
| CN108802422A (en) * | 2018-05-24 | 2018-11-13 | 华中科技大学 | A kind of hotting mask flow field sensor-based system of flexible intelligent covering and its application |
| CN109239392A (en) * | 2018-09-14 | 2019-01-18 | 常州大学 | A kind of tri-dimensional wind speed wind direction sensor and preparation method thereof based on MEMS technology |
| CN110057415A (en) * | 2019-05-08 | 2019-07-26 | 苏州新沃微电子有限公司 | A kind of micro flow sensor and preparation method thereof |
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