CN114604818A - MEMS infrared light source based on porous silicon and preparation method thereof - Google Patents
MEMS infrared light source based on porous silicon and preparation method thereof Download PDFInfo
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- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 230000005457 Black-body radiation Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 description 12
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
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Abstract
The invention relates to the technical field of semiconductor photoelectric components, and particularly discloses an MEMS infrared light source based on porous silicon and a preparation method thereof. According to the MEMS infrared light source and the preparation method thereof disclosed by the invention, the porous silicon structure is firstly manufactured on the silicon substrate before the light source is processed, and then the dielectric film, the heating resistor and the black body radiation layer are deposited on the porous silicon structure, so that the porous silicon structure has the advantages of low thermal conductivity, high mechanical strength and the like, and the reliability of the MEMS infrared light source is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric components, in particular to an MEMS infrared light source based on porous silicon and a preparation method thereof.
Background
The MEMS infrared light source radiates wide-spectrum infrared light outwards by heating the MEMS film according to a thermal radiation principle. The MEMS infrared light source is basically composed of a substrate, a supporting film, a heating layer and a radiation layer. The substrate is used to support the entire membrane and the heating and radiation layer structures. The support membrane is the support structure for the heating layer and the radiation layer. The heating layer is made of conductive metal, and converts electricity into heat energy by applying a certain voltage. Since the infrared spectrum produced by the radiation from the radiation layer depends on the radiation temperature, the light source heats up to several hundred degrees in the region of the film during normal operation. Then, wide-spectrum infrared light is radiated outwards through the heat radiation principle.
Currently, MEMS infrared light sources are fabricated by semiconductor processing, starting with a silicon wafer substrate, followed by deposition of a supportive thin film structure on the silicon wafer, followed by fabrication of a heating layer and a radiation layer on the thin film. However, in the working process of the light source, the normal working temperature of the light source is several hundred degrees centigrade, so that the film can generate large thermal stress due to the thermal expansion of the film, and the thermal stress can make the film become unstable, so that the film is cracked and the like. And in the process of switching on and off the light source, the mechanical strength of the film is reduced along with the increase and decrease of the temperature of the film, and the stability of the light source is reduced.
Disclosure of Invention
In order to solve the technical problems, the invention provides an MEMS infrared light source based on porous silicon and a preparation method thereof, so as to achieve the purposes of enabling the light source structure to have higher mechanical strength and improving the reliability of the MEMS infrared light source.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the utility model provides a MEMS infrared light source based on porous silicon, includes silicon substrate, dielectric film, heating resistor and black body radiation layer by setting gradually from bottom to top, heating resistor peels off the technology through the metal and forms the pattern structure, black body radiation layer is located heating resistor's middle zone, silicon substrate openly is located the below on black body radiation layer and forms porous silicon structure through the sculpture, the silicon substrate back is located porous silicon structure below and forms the back of the body hole region through the sculpture.
In the above scheme, the dielectric thin film is made of at least one material selected from silicon dioxide, silicon nitride, and silicon oxynitride.
In the above scheme, the heating resistor is made of platinum.
In the above scheme, the blackbody radiation layer is made of platinum black, carbon nanotubes or porous silicon.
A preparation method of an MEMS infrared light source based on porous silicon comprises the following steps:
s1, selecting a silicon wafer as a silicon substrate;
s2, etching the middle area of the front surface of the silicon substrate by using an electrochemical etching method to form a porous silicon structure;
s3, depositing a dielectric film on the silicon substrate with the porous silicon structure by using a film growth technology;
s4, depositing a heating resistor on the dielectric film, and forming a pattern structure through a metal stripping process;
s5, depositing a black body radiation layer in the middle area of the heating resistor;
and S6, etching the lower part of the porous silicon structure on the back surface of the silicon substrate to form a back hole area.
In the above scheme, in step S2, HF and absolute ethyl alcohol with a certain volume fraction are mixed according to a volume ratio of 1:1 and then etched in the electrochemical etching method.
In the above scheme, in step S3, the thin film growth technique is a PECVD method.
In the above scheme, in step S4, the heating resistor is deposited by using an electron beam evaporation or sputtering process.
In the above scheme, in step S5, the blackbody radiation layer is deposited by electroplating.
In the above scheme, in step S6, an ICP dry etching technique is used to perform etching to form a back hole region.
Through the technical scheme, the MEMS infrared light source based on porous silicon and the preparation method thereof provided by the invention have the following beneficial effects:
the MEMS infrared light source is processed into the infrared light source on the silicon substrate. Before a light source is processed, a porous silicon structure is firstly manufactured on a silicon substrate, and then a dielectric film, a heating resistor and a black body radiation layer are deposited on the porous silicon structure, the porous silicon structure has the advantages of low thermal conductivity, high mechanical strength and the like, and the reliability of the MEMS infrared light source is greatly improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a front sectional view of a porous silicon based MEMS infrared light source disclosed in an embodiment of the present invention;
FIG. 2 is a top view of a porous silicon based MEMS infrared light source according to an embodiment of the present invention;
FIG. 3 is a process flow chart of a method for manufacturing a porous silicon-based MEMS infrared light source according to an embodiment of the present invention;
FIG. 4 shows Raman peaks of a porous silicon sample scanned by 1mW laser at different temperatures;
FIG. 5 is a graph showing the temperature of a porous silicon structure versus the Raman peak;
fig. 6 shows the result of the absorption rate test of the blackbody radiation layer.
In the figure, 1, a silicon substrate; 2. a dielectric film; 3. a heating resistor; 4. a blackbody radiation layer; 5. a back hole area; 6. a porous silicon structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
The invention provides an MEMS infrared light source based on porous silicon, which comprises a silicon substrate 1, a dielectric film 2, a heating resistor 3 and a black body radiation layer 4 which are sequentially arranged from bottom to top, wherein the heating resistor 3 forms a graphic structure through a metal stripping process, the black body radiation layer 4 is positioned in the middle area of the heating resistor 3, the front surface of the silicon substrate 1 is positioned below the black body radiation layer 4 to form a porous silicon structure 6 through etching, and the back surface of the silicon substrate 1 is positioned below the porous silicon structure 6 to form a back hole area 5 through etching.
In this embodiment, the material of the dielectric film 2 is at least one selected from silicon dioxide, silicon nitride, and silicon oxynitride.
The heating resistor 3 is made of platinum, and the blackbody radiation layer 4 is made of platinum black, carbon nano tubes or porous silicon.
A method for preparing a MEMS infrared light source based on porous silicon, as shown in fig. 3, includes the following steps:
s1, selecting a silicon wafer as the silicon substrate 1.
S2, depositing a layer of silicon nitride film on the front surface of the silicon substrate 1 by using an LPCVD (low pressure chemical vapor deposition) method as an etching mask, then performing the operation steps of gluing, exposing, developing, etching and the like on the silicon substrate 1 to form a middle area porous silicon etching window, and etching the middle area on the front surface of the silicon substrate 1 by using an electrochemical etching method to form a porous silicon structure 6; in the electrochemical etching method, 49% by volume of hydrofluoric acid and absolute ethyl alcohol are mixed according to the volume ratio of 1:1 and then etched, constant current is applied to the silicon substrate 1 in the etching process, and the porosity of the prepared porous silicon structure 6 is 68.44% by a weighing method.
S3, depositing a dielectric film 2 on the silicon substrate 1 forming the porous silicon structure 6 by using a thin film growth technique (such as PECVD), and measuring the thickness of the deposited dielectric film 2 by using an ellipsometer.
S4, coating negative photoresist on the front surface of the silicon substrate 1 after the medium film 2 is grown, exposing, developing and the like to form a pattern structure, depositing a layer of thin titanium metal as a transition layer by using an electron beam evaporation or sputtering process, then depositing platinum metal, and forming the heating resistor 3 by using a metal stripping process.
S5, performing operations such as gluing, exposure, development and the like on the front surface of the silicon substrate 1 with the heating resistor 3 structure formed, forming an electroplating window of the black body radiation layer 4, putting the silicon substrate 1 with the electroplating window formed into an electroplating solution, connecting the silicon substrate 1 to a power supply cathode, and finally depositing the black body radiation layer 4 in the middle area of the heating resistor 3 by a constant current electroplating method.
S6, performing operation steps of gluing, exposing, developing and the like on the back surface of the silicon substrate 1 by using a double-sided alignment photoetching technology to form a back surface etching window corresponding to the front porous silicon structure 6, and then etching the wafer by using an ICP dry etching technology to form the back hole area 5.
According to the invention, before a light source is processed, the porous silicon structure 6 is firstly manufactured on the front surface of the silicon substrate 1, then the dielectric film 2, the heating resistor 3 and the black body radiation layer 4 are deposited on the porous silicon structure 6, and the porous silicon support structure with high mechanical strength is prepared by combining the porous silicon preparation process with a semiconductor processing method by using an electrochemical etching method, so that the reliability of the MEMS infrared light source is greatly improved.
In this embodiment, the thermal conductivity of the prepared porous silicon structure 6 is tested by using a raman spectrometer, and the basic principle of testing the thermal conductivity by using the raman spectrum is that a raman spectrum peak shifts to the left along with the change of the temperature of a measured substance, while a laser of the raman spectrometer raises the temperature of the porous silicon at a corresponding position, and the thermal conductivity of the porous silicon can be deduced according to the corresponding relationship between the temperature rise and the spectrum peak. The relationship between the local temperature rise of the porous silicon and the thermal conductivity coefficient thereof is as follows:
wherein,
is the thermal conductivity of the porous silicon,Pfor the laser power causing the temperature rise, a is the diameter of the laser beam spot,
in order to increase the temperature caused by the laser,
is the porous silicon structure 6 temperature.
The porous silicon structure 6 is heated to 35 deg.C, 135 deg.C, 235 deg.C, 335 deg.C in sequence using a temperature control stage. The Raman peaks of the above temperatures were sequentially scanned with a laser power of 1mW, as shown in FIG. 4. The correspondence between the raman peak y and the temperature x of the porous silicon structure 6 thus obtained is shown in fig. 5, where the relationship curve is: y = -0.0245x +519.46, and the calculation is based on this
The value of (c). And finally, calculating according to the formula (1) to obtain the thermal conductivity coefficient of the porous silicon structure 6 as 3.5W/(mK).
The absorption rate of the black body radiation layer 4 is tested by using a Fourier spectrometer (FTIR) so as to deduce the radiation efficiency of the black body radiation layer, and the test result is shown in fig. 6, so that the absorption rate of the platinum black plated radiation layer is higher as the electroplating time is longer when the current density is the same, the test result shows that the absorption rate of the black body radiation layer 4 in the spectral wavelength range of 2-14 μm is more than 99%, and the radiation efficiency of the MEMS infrared light source is greatly improved.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The utility model provides a MEMS infrared light source based on porous silicon, its characterized in that includes silicon substrate, dielectric film, heating resistor and black body radiation layer by setting gradually from bottom to top, heating resistor peels off the technology through the metal and forms the pattern structure, black body radiation layer is located the middle zone of heating resistor, the silicon substrate openly is located the below on black body radiation layer and forms porous silicon structure through the sculpture, the silicon substrate back is located porous silicon structure below and forms the back hole region through the sculpture.
2. The MEMS porous-silicon-based infrared light source of claim 1, wherein the dielectric film is made of at least one material selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride.
3. The MEMS infrared light source as recited in claim 1 wherein the heater resistor is platinum.
4. The MEMS ir light source according to claim 1, wherein the blackbody radiation layer is made of platinum black, carbon nanotubes or porous silicon.
5. A preparation method of an MEMS infrared light source based on porous silicon is characterized by comprising the following steps:
s1, selecting a silicon wafer as a silicon substrate;
s2, etching the middle area of the front surface of the silicon substrate by using an electrochemical etching method to form a porous silicon structure;
s3, depositing a layer of dielectric film on the silicon substrate with the porous silicon structure by using a film growth technology;
s4, depositing a heating resistor on the dielectric film, and forming a pattern structure through a metal stripping process;
s5, depositing a black body radiation layer in the middle area of the heating resistor;
and S6, etching the lower part of the porous silicon structure on the back surface of the silicon substrate to form a back hole area.
6. The method for preparing a MEMS infrared light source based on porous silicon as claimed in claim 5, wherein in step S2, HF and absolute ethyl alcohol with a certain volume fraction are mixed according to a volume ratio of 1:1 and then etched in the electrochemical etching method.
7. The method for preparing a MEMS infrared light source based on porous silicon as claimed in claim 5, wherein in step S3, the thin film growing technique is a PECVD method.
8. The method for preparing a MEMS infrared light source based on porous silicon as claimed in claim 5, wherein in step S4, the heating resistor is deposited by using electron beam evaporation or sputtering process.
9. The method for preparing a porous silicon based MEMS infrared light source of claim 5, wherein in step S5, the blackbody radiation layer is deposited by electroplating.
10. The method for preparing the MEMS infrared light source based on the porous silicon as claimed in claim 5, wherein in step S6, the back hole region is formed by etching by using an ICP dry etching technique.
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- 2022-05-11 CN CN202210506016.4A patent/CN114604818A/en active Pending
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| EP1798799A1 (en) * | 2005-12-16 | 2007-06-20 | STMicroelectronics S.r.l. | Fuel cell planarly integrated on a monocrystalline silicon chip and process of fabrication |
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