CN106299123A - A kind of method being patterned with machine electrode PEDOT:PSS - Google Patents
A kind of method being patterned with machine electrode PEDOT:PSS Download PDFInfo
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- CN106299123A CN106299123A CN201610887107.1A CN201610887107A CN106299123A CN 106299123 A CN106299123 A CN 106299123A CN 201610887107 A CN201610887107 A CN 201610887107A CN 106299123 A CN106299123 A CN 106299123A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
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Abstract
The invention belongs to organic electrode field, be specifically related to a kind of method being patterned with machine electrode PEDOT:PSS.Spin coating electron beam resist in substrate, with electron beam exposure method by suprabasil electron beam resist pattern layers after drying, the substrate of the beamwriter lithography glue-line with patterning deposits PEDOT:PSS, soak with organic solvent after drying under uniform temperature and remove electron beam resist, with the organic electrode PEDOT:PSS that must pattern in substrate after a large amount of deionized water rinsings, it is achieved be patterned with machine electrode PEDOT:PSS.The precision that the method that the present invention provides makes organic electrode PEDOT:PSS pattern reaches 10nm, photoresist residual defects and reactive ion etching damage problem have been broken away from simultaneously, for one new approaches of patterning path exploration of organic electrode, the large-scale application for organic electrode has established basis widely simultaneously.
Description
Technical field
The present invention principally falls into organic electrode field, is specifically related to a kind of side being patterned with machine electrode PEDOT:PSS
Method.
Background technology
The resource of the earth is limited, and wherein metal electrode resource is the most few.But the electronics being as excellence produces
Being widely used of product is rooted in the hearts of the people, and the metal electrode demand of semicon industry grows with each passing day, and the shortage of final metal electrode must
So can restrict the further development of electronic product.Electronic product is just towards trend development flexible, transparent, wearable the most now,
Metal electrode obviously cannot carry on a shoulder pole this important task.Metal electrode is because its good thermal conductivity, and too high molten boiling point makes to deposit metal
During electrode, metallic vapour is easily burnt sample.The mixture of PEDOT from PSS of different proportion has different work functions simultaneously, right
Answer different metal electrode, so can substitute for a variety of metal rather than wherein a certain metal electrode.And organic electrode
PEDOT:PSS by feat of conduction strong, flexible, transparent performance is so causing and studying widely, but its patterning techniques
The most all govern its development.
The patterning techniques of existing organic electrode PEDOT:PSS is mainly real by traditional mask plate photoetching process
Existing.Its cardinal principle is: first organic electrode PEDOT:PSS is spun to post-heating, then spin coating in a clean substrate
After photoresist, with the help of mask plate, use uv-exposure instrument, expose corresponding figure, after developing fixing, use reactive ion
Etching (RIE) etches the PEDOT:PSS thin film come out, and finally uses glue-dispenser to remove remaining photoresist.This pattern
The technique that first change technology is confined to complexity: need mask plate is fabricated separately and uses reactive ion etching (RIE), if made
With rear spin coating PEDOT:PSS up, then existing ultraviolet photoresist cannot stand the temperature baking needed for dry PEDOT:PSS；
If secondly channel material and organic electrode contact be raceway groove upper, organic electrode under, then technical staff is very difficult very
The technique precisely getting hold of reactive ion etching (RIE), will necessarily etch substrate or stay organic electrode PEDOT:PSS leading
Immediately below electricity raceway groove, and organic electrode is because photoresist cannot thoroughly be removed and there is residue problem, and the photoresist of insulation increases
Electrodes；If finally organic electrode is upper, conducting channel under, then reactive ion etching (RIE) also can etch
To conducting channel material, or or photoresist can be stayed to remain.The precision of the technique of this photoetching is also limited to the essence of photoresist
Degree is about 1 μm, and source is higher than the precision of other Patternized technique.
Summary of the invention
For the problems referred to above, the invention provides a kind of method being patterned with machine electrode PEDOT:PSS, make precision permissible
Reach 10nm, break away from photoresist residual defects and reactive ion etching (RIE) damage problem simultaneously.This is patterned with electromechanics
Pole PEDOT:PSS technology one new approaches that has been the patterning path exploration of organic electrode, are the extensive of organic electrode simultaneously
Basis widely has been established in application.
The present invention is achieved by the following technical solutions:
A kind of method being patterned with machine electrode PEDOT:PSS, said method comprising the steps of:
(1) spin coating electron beam resist in substrate, must be at suprabasil beamwriter lithography glue-line after drying；
(2) with electron beam exposure method by described suprabasil electron beam resist pattern layers, must be with the electronics of patterning
The substrate of bundle photoresist layer；
(3) in the described substrate with the beamwriter lithography glue-line of patterning, deposit PEDOT:PSS, be dried under uniform temperature
Intermedium；
(4) soak described intermedium with organic solvent and remove electron beam resist, with must be in substrate after a large amount of deionized water rinsings
The organic electrode PEDOT:PSS of upper patterning, it is achieved be patterned with machine electrode PEDOT:PSS.
Further, described electron beam resist is polymethyl methacrylate or polymethyl methacrylate and methyl-prop
The mixed ester of e pioic acid methyl ester;The molecular weight of described polymethyl methacrylate is 495K or 950k.
Further, step (3) is dried under uniform temperature at 120 DEG C-220 DEG C be dried 5-30min, this temperature and
Time ensures PEDOT:PSS invariance, and dried PEDOT:PSS finally can be water insoluble.
Further, in described step (2), the precision of patterning is 0.01 micron to 100 microns.
Further, described step (4) is soaked with organic solvent and is soaked 0.5-for 50 DEG C of-100 DEG C of temperature in acetone
12h。
Further, in step (3), PEDOT:PSS deposition process is spin-coating method, and spin coating liquid used is that PEDOT:PSS is with different
The mixed solution of propanol 1:1 by volume.
Further, the condition dried described in step (1) is: keep 1-2min at a temperature of 170 DEG C-190 DEG C.
Further, described substrate is the substrate that arbitrary surfaces is smooth.
Substrate can be clean after silicon dioxide, deposition have the silicon dioxide of monolayer molybdenum bisuphide, the PET of flexible and transparent or
PEI etc..
Further, described step (3) is dried under uniform temperature as being dried 15-30min at a temperature of 180 DEG C.
The Advantageous Effects of the present invention:
(1) method that the present invention provides breaks away from mask plate and the use of reactive ion etching (RIE), solve photoresist residual and etc.
Gas ions radiation damage；
(2) present invention uses electron beam lithography, improves the precision of patterning；
(3) what machine electrode replaces metal electrode realizes low cost that what prepared by the present invention be patterned with was green is patterned with machine electrode,
Electrode preparation especially for New Two Dimensional material has the irreplaceable effect of metal electrode.
Accompanying drawing explanation
Fig. 1, the present invention are patterned with the schematic flow sheet of machine electrode PEDOT:PSS；
The SEM figure of PEDOT:PSS patterning in Fig. 2, the embodiment of the present invention 1；
The SEM figure of Fig. 3, the embodiment of the present invention 2 PEDOT:PSS patterning；
The structural representation of crystal of molybdenum disulfide pipe in Fig. 4, the embodiment of the present invention 3；
The current-voltage curve of crystal of molybdenum disulfide pipe in Fig. 5, the embodiment of the present invention 3；
In figure: 1, PEDOT:PSS organic electrode, 2, molybdenum disulfide nano sheet, 3, silicon dioxide substrate, 4, beamwriter lithography
Glue.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is explained in further detail.Should be appreciated that specific embodiment described herein is used only for explaining the present invention, and
It is not used in the restriction present invention.
On the contrary, the present invention contain any be defined by the claims the replacement done in the spirit and scope of the present invention, repair
Change, equivalent method and scheme.Further, in order to make the public that the present invention to be had a better understanding, thin to the present invention below
During joint describes, detailed describe some specific detail sections.There is no these detail sections for a person skilled in the art
Description can also understand the present invention completely.
Embodiment 1
Patterning PEDOT:PSS organic electrode flow chart as it is shown in figure 1,
(1) silicon dioxide substrate is cleaned: the silicon dioxide substrate of 2.5*2.5cm is successively put into acetone, ethanol, deionized water,
In each solution after the ultrasonic cleaning of each 10 minutes, taking out, nitrogen dries up；
(2) at 3000 rpms, spin coating PMMA glue (950K) under the parameter of a minute, rear 180 DEG C of drying；
(3) electron beam lithography prepares " comb " shape figure, and the width wherein " combing " branch is 50 nanometers, vertical with " comb " branch
" combing " dry width and be about 80 nanometers, such as Fig. 2, developing fixing nitrogen dries up；
(4) spin coating PEDOT:PSS organic electrode, on hot plate, 180 DEG C are toasted 15-30 minute, are finally putting into acetone soln and soak
12h；
Embodiment 2
(1) silicon dioxide substrate is cleaned: the silicon dioxide substrate of 2.5*2.5cm is successively put into acetone, ethanol, deionized water,
In each solution after the ultrasonic cleaning of each 10 minutes, taking out, nitrogen dries up.；
(2) at 3000 rpms, spin coating PMMA glue (495K) under the parameter of a minute, rear 180 DEG C of drying；
(3) electron beam lithography prepares PEDOT:PSS striped, and wherein width of fringe is about 10 microns, such as Fig. 3, developing fixing
Nitrogen dries up；
(4) spin coating PEDOT:PSS organic electrode, on hot plate, 180 DEG C are toasted 15-30 minute, are finally putting into acetone soln and soak
12h；
Embodiment 3
Monolayer molybdenum bisuphide can be previously deposited in substrate, then carry out patterning PEDOT:PSS organic electrode, prepare two sulfur
Changing molybdenum transistor, crystal of molybdenum disulfide tubular construction schematic diagram prepared by this method is as shown in Figure 4.Specifically comprise the following steps that
(1) silicon dioxide substrate is cleaned: the silicon dioxide substrate of 2.5*2.5cm is successively put into acetone, ethanol, deionized water,
In each solution after the ultrasonic cleaning of each 10 minutes, taking out, nitrogen dries up.；
(2) chemical vapor deposition growth monolayer molybdenum bisuphide, with sulfur powder and molybdenum trioxide as reactant, 860 DEG C of preparation depositions
To silica surface, monolayer molybdenum bisuphide is equilateral triangle, and wherein the length of side is about 100 microns；
(3) at 3000 rpms, spin coating PMMA glue (495K) under the parameter of a minute, rear 180 DEG C of drying；
(4) figure required for electron beam lithography exposure；
(5) spin coating PEDOT:PSS organic electrode, on hot plate, 180 DEG C are toasted 15-30 minute, are finally putting into acetone soln and soak
12h。
When measuring the current-voltage curve of the crystal of molybdenum disulfide pipe prepared as it is shown in figure 5, measure, one of them
Electrode ground connection, another electrode applies voltage.
Claims (9)
1. the method being patterned with machine electrode PEDOT:PSS, it is characterised in that said method comprising the steps of:
(1) spin coating electron beam resist in substrate, must be at suprabasil beamwriter lithography glue-line after drying；
(2) with electron beam exposure method by described suprabasil electron beam resist pattern layers, must be with the electronics of patterning
The substrate of bundle photoresist layer；
(3) in the described substrate with the beamwriter lithography glue-line of patterning, deposit PEDOT:PSS, be dried under uniform temperature
Intermedium；
(4) soak described intermedium with organic solvent and remove electron beam resist, with must be in substrate after a large amount of deionized water rinsings
The organic electrode PEDOT:PSS of upper patterning, it is achieved be patterned with machine electrode PEDOT:PSS.
A kind of method being patterned with machine electrode PEDOT:PSS, it is characterised in that described electron beam
Photoresist is polymethyl methacrylate or polymethyl methacrylate and the mixed ester of methyl methacrylate;Described poly-methyl
The molecular weight of acrylic acid methyl ester. is 495K or 950k.
A kind of method being patterned with machine electrode PEDOT:PSS, it is characterised in that in step (3) one
It is dried under fixed temperature as being dried 5-30min at 120 DEG C-220 DEG C.
4. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that described
In step (2), the precision of patterning is 0.01 micron to 100 microns.
5. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that described
Step (4) organic solvent soaks for changing 50 DEG C of-100 DEG C of temperature immersion 0.5-12h in acetone into.
6. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that step
(3) in, PEDOT:PSS deposition process is spin-coating method, and spin coating liquid used is the mixing of PEDOT:PSS and isopropanol 1:1 by volume
Solution.
7. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that step
(1) condition dried described in is: keep 1-2min at a temperature of 170 DEG C-190 DEG C.
8. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that described
The substrate that substrate arbitrary surfaces is smooth all may be used.
9. a kind of method being patterned with machine electrode PEDOT:PSS as described in claim 1-3 is arbitrary, it is characterised in that described
Step (3) is dried under uniform temperature into being dried 15-30min at a temperature of 180 DEG C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038452A (en) * | 2020-09-10 | 2020-12-04 | 哈尔滨工业大学 | Rapid patterning etching method of PEDOT (polymer stabilized ethylene terephthalate): PSS (patterned sapphire substrate) electrode based on ultraviolet lithography process |
| CN113054058A (en) * | 2021-03-16 | 2021-06-29 | 哈尔滨工业大学 | Ultraviolet lithography method for patterning and etching PEDOT (Poly ethylene glycol Ether-butyl ether) -PSS (Poly styrene) transparent electrode on flexible hydrophobic substrate |
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| CN103077888A (en) * | 2013-01-11 | 2013-05-01 | 西安交通大学 | Method for preparing electrode on single nano wire |
| CN104934301A (en) * | 2015-06-13 | 2015-09-23 | 复旦大学 | Manufacturing method of non-invasive graphene nano-scale device |
| CN105259715A (en) * | 2015-11-20 | 2016-01-20 | 深圳市华星光电技术有限公司 | Patterned electrode manufacturing method, liquid crystal display panel and liquid crystal display panel manufacturing method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040067627A1 (en) * | 2002-10-07 | 2004-04-08 | Lee Seong Jae | Dry lithograpy method and method of forming gate pattern using the same |
| CN103077888A (en) * | 2013-01-11 | 2013-05-01 | 西安交通大学 | Method for preparing electrode on single nano wire |
| CN104934301A (en) * | 2015-06-13 | 2015-09-23 | 复旦大学 | Manufacturing method of non-invasive graphene nano-scale device |
| CN105259715A (en) * | 2015-11-20 | 2016-01-20 | 深圳市华星光电技术有限公司 | Patterned electrode manufacturing method, liquid crystal display panel and liquid crystal display panel manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038452A (en) * | 2020-09-10 | 2020-12-04 | 哈尔滨工业大学 | Rapid patterning etching method of PEDOT (polymer stabilized ethylene terephthalate): PSS (patterned sapphire substrate) electrode based on ultraviolet lithography process |
| CN112038452B (en) * | 2020-09-10 | 2023-03-03 | 哈尔滨工业大学 | Rapid patterning etching method of PEDOT (polyethylene glycol terephthalate): PSS (patterned sapphire substrate) electrode based on ultraviolet lithography process |
| CN113054058A (en) * | 2021-03-16 | 2021-06-29 | 哈尔滨工业大学 | Ultraviolet lithography method for patterning and etching PEDOT (Poly ethylene glycol Ether-butyl ether) -PSS (Poly styrene) transparent electrode on flexible hydrophobic substrate |
| CN113054058B (en) * | 2021-03-16 | 2023-07-25 | 哈尔滨工业大学 | Ultraviolet lithography method for patterning and etching PEDOT (polymer radical) PSS (power grid system) transparent electrode on flexible hydrophobic substrate |
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