CN104236739A - Temperature and humidity sensor - Google Patents

Temperature and humidity sensor Download PDF

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Publication number
CN104236739A
CN104236739A CN201410508317.6A CN201410508317A CN104236739A CN 104236739 A CN104236739 A CN 104236739A CN 201410508317 A CN201410508317 A CN 201410508317A CN 104236739 A CN104236739 A CN 104236739A
Authority
CN
China
Prior art keywords
conductive layer
humidity sensor
temperature
humidity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410508317.6A
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Chinese (zh)
Inventor
谷文
张珽
祁明锋
刘瑞
沈方平
丁海燕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Leanstar Electronic Technology Co ltd
Original Assignee
Suzhou Leanstar Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Leanstar Electronic Technology Co ltd filed Critical Suzhou Leanstar Electronic Technology Co ltd
Priority to CN201410508317.6A priority Critical patent/CN104236739A/en
Publication of CN104236739A publication Critical patent/CN104236739A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a temperature and humidity sensor which comprises a substrate, a conductive layer, a humidity sensitive layer, test electrodes and metal electrodes. The conductive layer is formed on the substrate, the humidity sensitive layer is formed on the conductive layer and completely covers the same, the metal electrodes are fixed to the humidity sensitive layer, and the test electrodes are fixed to the substrate and connected with the conductive layer. The temperature and humidity sensor is small, light and precise and is high in integration degree, easy to manufacture and low in cost.

Description

A kind of Temperature Humidity Sensor
Technical field
The present invention relates to and automatically control and observation and control technology field, particularly relate to a kind of Temperature Humidity Sensor.
Background technology
Because the humiture of environment and the real life of people and commercial production have close relationship, therefore in the last few years, there is integrated Temperature Humidity Sensor.Temperature value in environment and humidity value are the electric signal being easy to measure by sensitive material or element transformation by the Temperature Humidity Sensor of integration.At present, in daily life, Temperature Humidity Sensor mainly applies to the field such as air-conditioning system, environment measuring.In the industrial production, mainly apply to weaving workshop, field, Fine Chemical Works, chemical laboratory, ultra-clean chamber etc. and higher place is required to humiture.Meanwhile, more and more Temperature Humidity Sensor will be used in fields such as safety monitoring, automobile, household electrical appliances, consumer electronics.But it is large that traditional Temperature Humidity Sensor exists volume mostly, has moving machinery parts, with the shortcoming such as integrated circuit is compatible low, make the effect of Temperature Humidity Sensor not very good.
Summary of the invention
The embodiment of the present invention proposes a kind of Temperature Humidity Sensor, and volume is little, and quality is light, and precision is high, and integration degree is high, and manufacture craft is simple, and with low cost.
The embodiment of the present invention provides a kind of Temperature Humidity Sensor, comprises substrate, conductive layer, humidity-sensitive layer, test electrode and metal electrode;
Described conductive layer is formed on described substrate, described humidity-sensitive layer to be formed on described conductive layer and to cover described conductive layer completely, described metal electrode is fixed in described humidity-sensitive layer, and described test electrode to be fixed on described substrate and to be connected with described conductive layer.
Further, described metal electrode comprises the first comb and the second comb; Described first comb and described second comb are staggered.
Implement the embodiment of the present invention, there is following beneficial effect:
The Temperature Humidity Sensor manufacture craft that the embodiment of the present invention provides is simple, adopt MEMS (Micro-Electro-Mechanical System, MEMS (micro electro mechanical system)) technology makes, volume is little, quality is light, and integration degree is high, good with the compatibility of integrated circuit, and with low cost, be easy to batch production; Caused the change of metal electrode electric capacity by the volumetric expansion of humidity-sensitive layer, thus calculate corresponding humidity value, the linearity and precision can be improved.
Accompanying drawing explanation
Fig. 1 is the diagrammatic cross-section of an embodiment of Temperature Humidity Sensor provided by the invention;
Fig. 2 is the vertical view of an embodiment of Temperature Humidity Sensor provided by the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
See Fig. 1, be the diagrammatic cross-section of an embodiment of Temperature Humidity Sensor provided by the invention, comprise substrate 1, conductive layer 2, humidity-sensitive layer 3, test electrode 5 and metal electrode 4;
Conductive layer 2 is formed on substrate 1, and humidity-sensitive layer 3 to be formed on conductive layer 2 and to cover conductive layer 2 completely, and metal electrode 4 is fixed in humidity-sensitive layer 3, and test electrode 5 to be fixed on substrate 1 and to be connected with conductive layer 2.
In the present embodiment, when the temperature in environment changes, conductive layer 2 is as temperature sensitive, and significant change can occur its resistance value, thus obtains the variable quantity of environment temperature by the change in resistance measuring conductive layer 2.When the humidity in environment, namely when atmospheric water content changes, hydrone in humidity-sensitive layer 3 absorbed air, makes the specific inductive capacity of humidity-sensitive layer 3 change, thus obtains the variable quantity of ambient humidity by the measurement capacitance of metal electrode 4 or the change of resistance value.Meanwhile, because the temperature and humidity in environment influences each other in measuring process, compensated mutually by the variable quantity measuring the temperature and humidity obtained, thus can obtain accurate ambient temperature value and humidity value by calculating.After test completes, by the program of setting, heating power is carried out to humidity-sensitive layer 3, accelerate the desorption of hydrone in humidity-sensitive layer 3.
Further, as shown in Figure 2, metal electrode 4 comprises the first comb 6 and the second comb 7; First comb 6 and the second comb 7 are staggered.
When humidity-sensitive layer 3 is subject to humidity change and changes volume, staggered distance between first comb 6 and the second comb 7 changes, thus generation differential capacitance, and then calculate humidity value by the capacitance of differential capacitance, improve the linearity measured and precision further.
Preferably, metal electrode 4 is aluminium or gold electrode.
Preferably, substrate 1 is bulk silicon substrate.
Preferably, conductive layer 2 is made up of silit, porous silicon or metal material.
Preferably, humidity-sensitive layer 3 is made up of polyimide, polystyrene or acetate fiber.
The Temperature Humidity Sensor manufacture craft that the embodiment of the present invention provides is simple, and adopt MEMS technology to make, volume is little, and quality is light, and integration degree is high, good with the compatibility of integrated circuit, and with low cost, is easy to batch production; Caused the change of metal electrode electric capacity by the volumetric expansion of humidity-sensitive layer, thus calculate corresponding humidity value, the linearity and precision can be improved.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.

Claims (6)

1. a Temperature Humidity Sensor, is characterized in that, comprises substrate, conductive layer, humidity-sensitive layer, test electrode and metal electrode;
Described conductive layer is formed on described substrate, described humidity-sensitive layer to be formed on described conductive layer and to cover described conductive layer completely, described metal electrode is fixed in described humidity-sensitive layer, and described test electrode to be fixed on described substrate and to be connected with described conductive layer.
2. Temperature Humidity Sensor as claimed in claim 1, it is characterized in that, described metal electrode comprises the first comb and the second comb; Described first comb and described second comb are staggered.
3. Temperature Humidity Sensor as claimed in claim 1 or 2, it is characterized in that, described metal electrode is aluminium or gold electrode.
4. Temperature Humidity Sensor as claimed in claim 3, it is characterized in that, described substrate is bulk silicon substrate.
5. Temperature Humidity Sensor as claimed in claim 3, it is characterized in that, described conductive layer is made up of silit, porous silicon or metal material.
6. Temperature Humidity Sensor as claimed in claim 3, it is characterized in that, described humidity-sensitive layer is made up of polyimide, polystyrene or acetate fiber.
CN201410508317.6A 2014-09-28 2014-09-28 Temperature and humidity sensor Pending CN104236739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410508317.6A CN104236739A (en) 2014-09-28 2014-09-28 Temperature and humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410508317.6A CN104236739A (en) 2014-09-28 2014-09-28 Temperature and humidity sensor

Publications (1)

Publication Number Publication Date
CN104236739A true CN104236739A (en) 2014-12-24

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CN201410508317.6A Pending CN104236739A (en) 2014-09-28 2014-09-28 Temperature and humidity sensor

Country Status (1)

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CN (1) CN104236739A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104614079A (en) * 2015-02-10 2015-05-13 东南大学 Infrared sensor
CN105067016A (en) * 2015-08-19 2015-11-18 东南大学 Flexible integrated temperature and humidity sensor based on oxidized graphene and preparation method of sensor
CN107407652A (en) * 2015-03-11 2017-11-28 罗伯特·博世有限公司 Manufacture method and corresponding gas sensor for gas sensor
CN108680611A (en) * 2018-07-02 2018-10-19 京东方科技集团股份有限公司 Humidity sensor, measuring system, switch controller and humidity measuring method
CN108896488A (en) * 2018-07-17 2018-11-27 山东省科学院激光研究所 Light fibre humidity transducer, production method, data processing method and acquisition device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102147A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS54102146A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS54102148A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS57172239A (en) * 1981-04-17 1982-10-23 Toshiba Corp Detection circuit of temperature and humidity
JPS58105047A (en) * 1981-12-18 1983-06-22 Hitachi Ltd Monolithic type temperature-humidity sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102147A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS54102146A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS54102148A (en) * 1978-01-30 1979-08-11 Matsushita Electric Ind Co Ltd Temperature and humidity sensor
JPS57172239A (en) * 1981-04-17 1982-10-23 Toshiba Corp Detection circuit of temperature and humidity
JPS58105047A (en) * 1981-12-18 1983-06-22 Hitachi Ltd Monolithic type temperature-humidity sensor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
施利毅: "《纳米材料》", 31 January 2007, 华东理工大学出版社 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104614079A (en) * 2015-02-10 2015-05-13 东南大学 Infrared sensor
CN104614079B (en) * 2015-02-10 2017-10-03 东南大学 A kind of infrared sensor
CN107407652A (en) * 2015-03-11 2017-11-28 罗伯特·博世有限公司 Manufacture method and corresponding gas sensor for gas sensor
CN105067016A (en) * 2015-08-19 2015-11-18 东南大学 Flexible integrated temperature and humidity sensor based on oxidized graphene and preparation method of sensor
CN108680611A (en) * 2018-07-02 2018-10-19 京东方科技集团股份有限公司 Humidity sensor, measuring system, switch controller and humidity measuring method
CN108896488A (en) * 2018-07-17 2018-11-27 山东省科学院激光研究所 Light fibre humidity transducer, production method, data processing method and acquisition device

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Application publication date: 20141224