CN102692432A - Integrated humidity sensor and manufacturing method - Google Patents
Integrated humidity sensor and manufacturing method Download PDFInfo
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- CN102692432A CN102692432A CN2012101716950A CN201210171695A CN102692432A CN 102692432 A CN102692432 A CN 102692432A CN 2012101716950 A CN2012101716950 A CN 2012101716950A CN 201210171695 A CN201210171695 A CN 201210171695A CN 102692432 A CN102692432 A CN 102692432A
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Abstract
An integrated humidity sensor includes a semiconductor substrate, an integrated circuit positioned on the semiconductor substrate, and a sensing component positioned on the integrated circuit, wherein the sensing component is connected with the integrated circuit through a metal interconnection line, and includes electrodes positioned on the metal interconnection line, a protective layer on the electrodes, and a measuring layer on the protective layer sequentially; and the measuring layer is made of a dielectric constant humidity sensitive material. The invention further provides a manufacturing method for the integrated humidity sensor, which includes the steps of forming the integrated circuit on the semiconductor substrate; forming the metal interconnection line on the integrated circuit; and forming the sensing component on the metal interconnection line, wherein the sensing component sequentially includes the electrodes positioned on the metal interconnection line, the protective layer on the electrodes, and the measuring layer on the protective layer, and the measuring layer is made of dielectric constant humidity sensitive material. The integrated humidity sensor provided by the invention has the advantages of high precision, small parasitic parameter, low cost and small size, and facilitates the realization of the digital acquisition system.
Description
Technical field
The present invention relates to sensor field, particularly a kind of integrated form humidity sensor and manufacturing approach.
Background technology
At present, all often need measure and control such as industrial and agricultural production, environmental protection, space flight etc. are multi-field ambient humidity.But in the environmental parameter of routine, humidity is the most difficult parameter of accurately measuring.
Humidity sensor is based on its functional material can take place that the physical influence relevant with humidity or chemical reaction manufacturing form, and has the function that can the humidity physical quantity be converted to electric signal.Humidity sensor can be divided into according to the difference of its principle of work: 1, telescopic, the linear dimension of utilizing the degreasing hair changes with the variation of environment moisture content; 2, vaporation-type, i.e. wet and dry bulb humidity sensor utilizes dry bulb and wet bulb thermometer temperature difference when relative humidity variations to change and make; 3, dew point formula utilizes cooling means that the steam in the gas is reached capacity and dewfall, comes the relative humidity in the measurement gas according to dewpoint temperature; 4, electronic type comprises resistance-type, condenser type and electrolytic.
Capacitance type humidity sensor utilizes wet sensory material suction back specific inductive capacity to change and changes capacitance, and it has highly sensitive, low in energy consumption, temperature to float advantages such as little, has therefore received the common concern of scientists.Yet because the coupling of the complicacy of design and interface circuit requires height, its development is slow relatively.
Microsensor and on every side interface circuit are integrated, and fabrication and processing to realize the performance of more function and Geng Gao, reduces the cost of sensor simultaneously on same chip, new focus that has become that MEMS develops and trend.Through the system integration, sensor and interface circuit are positioned as close to, thereby reduce parasitic parameter and external disturbance to a great extent.Single chip integrated sensor can also reduce the integrity problem that interconnects between the different chips.It is integrated to utilize the CMOS technology that humidity sensor and metering circuit are carried out on the sheet, is the research focus and the focus of following humidity sensor.Yet the design of the compatibility of technology, measuring accuracy and Detection of Weak Signals circuit etc. have all proposed challenge to the design and the processing of monolithic integrated form humidity sensor.
The patent No. is that the United States Patent (USP) of US6690569B1 has just disclosed a kind of humidity sensor.
Summary of the invention
It is high that technical matters to be solved by this invention provides a kind of precision, and parasitic parameter is little, helps realizing the integrated form humidity sensor of digital collection system.
In order to address the above problem, the invention provides a kind of integrated form humidity sensor, comprising:
Semiconductor substrate;
Be positioned at the integrated circuit on the said Semiconductor substrate;
Be positioned at the sensing element on the said integrated circuit, said sensing element is connected with said integrated circuit through metal interconnecting wires;
Said sensing element comprises electrode, the protective seam on the electrode, the measurement layer on the protective seam that is positioned on the metal interconnecting wires, and said measurement layer is made up of specific inductive capacity humidity sensitive material.
Optional, described protective seam material is diamond shaped carbon, amorphous carbon or silicon nitride.
Optional, said sensing element is in the vertical direction of said integrated circuit, and both have overlapping in the vertical.
Optional, said sensing element is at the oblique upper of said integrated circuit, and both do not have overlapping in the vertical.
Optional, between said integrated circuit and said sensing element, also having separation layer, said metal interconnecting wires is connected with said sensing element through the connecting hole on the separation layer, and described separation layer material is silicon nitride or monox.
Optional, also have a heating arrangement, be positioned at by the said sensing element.
Optional, described specific inductive capacity humidity sensitive material is high molecular polymer or pottery.
Optional, described electrode is interdigital structure or spirality, material is aluminium, copper, titanium, tungsten, tantalum or polysilicon.
The present invention also provides a kind of manufacturing approach of integrated form humidity sensor, comprising:
On Semiconductor substrate, form integrated circuit;
On integrated circuit, form metal interconnecting wires;
On metal interconnecting wires, form sensing element, comprise the electrode, the protective seam on the electrode, the measurement layer on the protective seam that are positioned on the metal interconnecting wires successively, said measurement layer is made up of specific inductive capacity humidity sensitive material.
Optional, described metal interconnecting wires multiple-level stack is used to isolate sensing element and integrated circuit.
Compared with prior art, the present invention has the following advantages:
(1) the present invention adopts fully integrated solution, has reduced parasitic influence to sensor accuracy, has improved the device precision.Simultaneously, volume little (millimeter magnitude), having of digital interface is beneficial to the microminiaturization that realizes data acquisition system (DAS).
(2) in the possibility, integrated circuit and sensing element adopt the vertical stacks mode to arrange, have further reduced effective chip area, have reduced cost.
(3) in the possibility, protective seam has adopted diamond shaped carbon, amorphous carbon or silicon nitride, and it is wear-resisting, insulation, thermal conduction characteristic excellent characteristic make individual layer to play a protective role, and has reduced cost, has simplified manufacture craft.
Description of drawings
Accompanying drawing and not drawn on scale focus on illustrating purport of the present invention.In the accompanying drawings for clarity sake, amplified the size of layer with the zone.
Fig. 1 is the vertical view of integrated form humidity sensor first embodiment of the present invention;
Fig. 2 is the cross-sectional view of Fig. 1 integrated form humidity sensor first embodiment of the present invention along A-A ' direction;
Fig. 3 is the cross-sectional view of Fig. 1 integrated form humidity sensor first embodiment of the present invention along B-B ' direction;
Fig. 4 is the vertical view of second embodiment of integrated form humidity sensor of the present invention;
Fig. 5 is the vertical view of the 3rd embodiment of integrated form humidity sensor of the present invention;
Fig. 6 is the vertical view of the 4th embodiment of integrated form humidity sensor of the present invention.
Fig. 7 is the cross-sectional view of integrated form humidity sensor the 4th embodiment of the present invention shown in Figure 6 along A-A ' direction;
Fig. 8 is the cross-sectional view of the 5th embodiment of integrated form humidity sensor of the present invention;
Fig. 9 is the schematic flow sheet of first embodiment of integrated form humidity sensor manufacturing approach of the present invention;
Figure 10 ~ Figure 14 is the synoptic diagram of each formed semiconductor structure of stage among first embodiment of integrated form humidity sensor manufacturing approach of the present invention;
Figure 15 is the schematic flow sheet of second embodiment of integrated form humidity sensor manufacturing approach of the present invention;
Figure 16 ~ Figure 19 is the synoptic diagram of each formed semiconductor structure of stage among second embodiment of integrated form humidity sensor manufacturing approach of the present invention;
Description of reference numerals is following:
1 Semiconductor substrate, 2 integrated circuit
3 metal interconnecting wires, 4 separation layers
5 sensing elements, 6 electrodes
7 protective seams 8 are measured layer
9 heating arrangements
Embodiment
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Below in conjunction with embodiment integrated form humidity sensor of the present invention is described in detail.
Fig. 1 is the vertical view of first embodiment of integrated form humidity sensor of the present invention, and Fig. 2 is the cross-sectional view of first embodiment along A-A ' direction.Describe below in conjunction with Fig. 1, Fig. 2.
Humidity sensor as shown in Figure 1, it is measured layer 8 and is positioned at outermost layer, directly contacts with extraneous, with perception humidity.Measure layer 8 and constitute, particularly, can be high molecular polymer or pottery by specific inductive capacity humidity sensitive material.Measure layer 8 times (protective seam 7 does not show), 2 interdigital electrode 6 cross arrangement.Measure layer 8 times, also have a fork-shaped heating arrangement 9, it is near measuring layer 8, for fear of measuring layer 8 dewfall.
Fig. 2 is a sectional view embodiment illustrated in fig. 1, more is shown clearly in the structural relation of 5 of integrated circuit 2, metal interconnecting wires 3 and sensing elements among Fig. 2.Integrated circuit 2 is positioned on the Semiconductor substrate 1.Metal interconnecting wires 3 is arranged on integrated circuit 2.Between metal interconnecting wires 3 and sensing element 5, separation layer 4 is arranged.Metal interconnecting wires 3 is realized integrated circuit 2 and sensing element 5 interconnection through the connecting hole in the separation layer 4.Sensing element 5 comprises the protective seam 7 on electrode 6, the electrode 6, the measurement layer 8 on the protective seam 7 successively.
Described Semiconductor substrate 1 can be monocrystalline silicon or SiGe; It also can be silicon-on-insulator (SOI).
Sensing element 5 comprises 2 interdigital electrodes 6 of arranged crosswise successively, protective seam 7 and measurement layer 8.The material of electrode 6 can be aluminium, copper, titanium, tungsten, tantalum or polysilicon.Protective seam 7 materials can be diamond shaped carbon, amorphous carbon or silicon nitride.The insulating property of diamond shaped carbon, amorphous carbon, silicon nitride are good, can the short-circuiting electrode structures, and heat conductivility is good, and it is high to measure accuracy.
Fig. 3 is the cross-sectional view of first embodiment along B-B ' direction.Can be shown clearly in the locations of structures of heating arrangement 9 in conjunction with Fig. 1, Fig. 3.As shown in Figure 1, heating arrangement 9 can be positioned at measures layer 8 times.As shown in Figure 3, heating arrangement 9 is between protective seam 7 and measurement layer 8.Because under the high humidity environment, moisture is prone to condense in measures layer 8 surface, thereby makes humidity sensor measuring error occur.To sensing element 5 heating, avoid dewfall, can effectively improve error.
Need to prove that heating arrangement 9 only needs can play heat effect near measuring layer 8, its particular location is not limited to shown in the present embodiment.Among second embodiment such as integrated form humidity sensor of the present invention shown in Figure 4, heating arrangement 9 is snakelike and is arranged between 2 interdigital electrodes 6.The material of its material and electrode is consistent, and the interdigital electrode with both sides constitutes two capacitive transducers simultaneously, and its position can measured on the layer 8.
Among the 3rd embodiment of integrated form humidity sensor of the present invention shown in Figure 5, electrode 6 can be spirality.
Fig. 6 is the vertical view of the 4th embodiment of integrated form humidity sensor of the present invention.Part same as the previously described embodiments repeats no more here.Sensing element 5 in the present embodiment is positioned at the oblique upper of integrated circuit 2, and integrated circuit 2 and sensing element 5 be non-overlapping copies in the vertical.Compared to the foregoing description, the shared effective chip area of present embodiment is relatively large.
Fig. 7 is the cross-sectional view along A-A ' direction embodiment illustrated in fig. 6.In conjunction with Fig. 6, Fig. 7, we can find out the position relation that each several part is mutual more intuitively.As shown in Figure 7, integrated circuit 2 is positioned at different aspects with sensing element 5, and zero lap part in the vertical can prevent the influence to integrated circuit 2 of the hot gas, moisture of sensing element 5 so better.Among Fig. 7, piled up by multiple layer metal interconnection line 3, the function of alternative separation layer 4 plays the effect of isolating sensing element 5 and integrated circuit 2.
Fig. 8 is the cross-sectional view of integrated form humidity sensor the 5th embodiment of the present invention; With the 4th embodiment same section, repeat no more here.Among the 5th embodiment, independently separation layer 4 is arranged, isolate hot gas, the moisture effect is better.
Fig. 9 is the schematic flow sheet of integrated form humidity sensor manufacturing approach first embodiment of the present invention, comprising:
Step S901 forms integrated circuit on Semiconductor substrate;
Step S902 forms metal interconnecting wires on integrated circuit;
Step S903 forms separation layer, in separation layer, makes connecting hole, to connect sensing element and metal interconnecting wires;
Step S904 forms electrode, protective seam and measurement layer successively on metal interconnecting wires.
Figure 10 to Figure 14 is the synoptic diagram of each formed semiconductor structure of stage among integrated form humidity sensor manufacturing approach first embodiment of the present invention, and integrated form humidity sensor manufacturing approach roughly may further comprise the steps in the present embodiment:
Shown in figure 10, on Semiconductor substrate 1, form integrated circuit 2.
Described Semiconductor substrate 1 can be monocrystalline silicon or SiGe; It also can be silicon-on-insulator (SOI).
Shown in figure 11, on integrated circuit 2, form metal interconnecting wires 3.
Shown in figure 12, form separation layer 4.Its material can be silicon nitride or monox.
Shown in figure 13, make connecting hole, to connect sensing element 5 and integrated circuit 2.
Shown in figure 14, on metal interconnecting wires 3, form sensing element 5, described sensing element 5 comprises 2 interdigital electrodes 6 of arranged crosswise successively, protective seam 7 and measurement layer 8.Electrode 6 also can be spirality (as shown in Figure 5).The material of electrode 6 can be aluminium, copper, titanium, tungsten, tantalum or polysilicon.Protective seam 7 materials can be diamond shaped carbon, amorphous carbon or silicon nitride.Measure layer 8 and constitute, can be high molecular polymer or pottery by specific inductive capacity humidity sensitive material.
Need to prove that the sensing element 5 in the present embodiment is formed at integrated circuit 2 vertical direction, both have overlapping in the vertical.But this method can make sensing element 5 be formed at the oblique upper of integrated circuit 2 equally, and both are zero lap in the vertical.
Subsequently, accomplish pad and make and other postchannel process, with final formation integrated form humidity sensor of the present invention.Its concrete technology that forms is known for those skilled in the art, repeats no more at this.
Need to prove that when sensing element 5 was formed at the oblique upper of integrated circuit 2, the metal interconnecting wires that piles up 3 capable of using served as separation layer 4, and no longer makes independently separation layer 4.
Figure 15 is the schematic flow sheet of integrated form humidity sensor manufacturing approach second embodiment of the present invention, comprising:
Step S1501 forms integrated circuit on Semiconductor substrate;
Step S1502 forms metal interconnecting wires on integrated circuit;
Step S1503 forms electrode, protective seam on metal interconnecting wires;
Step S1504 forms heating arrangement, measures layer on protective seam.
Figure 16 to Figure 19 is the synoptic diagram of each formed semiconductor structure of stage among integrated form humidity sensor manufacturing approach second embodiment of the present invention, and the manufacturing approach of integrated form humidity sensor roughly may further comprise the steps in the present embodiment:
Shown in figure 16, on Semiconductor substrate 1, form integrated circuit 2.
Shown in figure 17, on integrated circuit 2, form metal interconnecting wires 3.
Shown in figure 18, on metal interconnecting wires 3, form electrode 6, protective seam 7.In the present embodiment, pile up, form sealing ring, play buffer action, no longer make independently separation layer 4 by multiple layer metal interconnection line 3.
Shown in figure 19, on protective seam 7, form heating arrangement 9, measure layer 8.Sensing element 5 in the present embodiment is positioned at the oblique upper of integrated circuit 2, and both are zero lap in the vertical.
Need to prove that the heating arrangement 9 in the present embodiment is formed at protective seam 7 and measures between the layer 8, it also can be formed at measures on the layer 8.
Subsequently, accomplish pad and make and other postchannel process,, repeat no more here with final formation integrated form humidity sensor of the present invention.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (10)
1. an integrated form humidity sensor is characterized in that, comprising:
Semiconductor substrate;
Be positioned at the integrated circuit on the said Semiconductor substrate;
Be positioned at the sensing element on the said integrated circuit, said sensing element is connected with said integrated circuit through metal interconnecting wires;
Said sensing element comprises electrode, the protective seam on the electrode, the measurement layer on the protective seam that is positioned on the metal interconnecting wires, and said measurement layer is made up of specific inductive capacity humidity sensitive material.
2. integrated form humidity sensor as claimed in claim 1 is characterized in that:
The material of said protective seam is diamond shaped carbon, amorphous carbon or silicon nitride.
3. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Said sensing element is in the vertical direction of said integrated circuit, and both have overlapping in the vertical.
4. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Said sensing element is at the oblique upper of said integrated circuit, and both do not have overlapping in the vertical.
5. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Between said integrated circuit and said sensing element, also have separation layer, said metal interconnecting wires is connected with said sensing element through the connecting hole on the separation layer, and described separation layer material is silicon nitride or monox.
6. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Also has a heating arrangement, on the said measurement layer or between said measurement layer and the protective seam.
7. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Described specific inductive capacity humidity sensitive material is high molecular polymer or pottery.
8. integrated form humidity sensor as claimed in claim 1 is characterized in that:
Described electrode is interdigital structure or spirality, and material is aluminium, copper, titanium, tungsten, tantalum or polysilicon.
9. the manufacturing approach of an integrated form humidity sensor comprises:
On Semiconductor substrate, form integrated circuit;
On integrated circuit, form metal interconnecting wires;
On metal interconnecting wires, form sensing element, comprise the electrode, the protective seam on the electrode, the measurement layer on the protective seam that are positioned on the metal interconnecting wires successively, said measurement layer is made up of specific inductive capacity humidity sensitive material.
10. the manufacturing approach of integrated form humidity sensor as claimed in claim 9 is characterized in that:
Described metal interconnecting wires multiple-level stack is used to isolate sensing element and integrated circuit.
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Cited By (12)
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| CN103698368A (en) * | 2013-12-19 | 2014-04-02 | 无锡康森斯克电子科技有限公司 | Sensor element, sensor and humidity sensor element |
| CN104062322A (en) * | 2014-07-10 | 2014-09-24 | 苏州能斯达电子科技有限公司 | Humidity sensor and preparation method thereof |
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
| CN105181764A (en) * | 2015-09-25 | 2015-12-23 | 上海集成电路研发中心有限公司 | Humidity sensor and manufacturing method |
| CN105300540A (en) * | 2015-09-22 | 2016-02-03 | 上海申矽凌微电子科技有限公司 | Manufacturing method of integrated all-in-one temperature and humidity sensor chip |
| CN105502282A (en) * | 2015-11-30 | 2016-04-20 | 上海集成电路研发中心有限公司 | Method for manufacturing MEMS humidity sensor |
| CN107087357A (en) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | A kind of manufacture method of Temperature Humidity Sensor and Temperature Humidity Sensor |
| CN111382829A (en) * | 2018-12-27 | 2020-07-07 | 拉碧斯半导体株式会社 | IC tag and method for manufacturing IC tag |
| CN112485298A (en) * | 2020-11-06 | 2021-03-12 | 电子科技大学 | Manufacturing method of polyvinylidene fluoride-based flexible humidity sensor |
| CN113167662A (en) * | 2018-09-17 | 2021-07-23 | 哈钦森技术股份有限公司 | Integrated sensor and circuit |
| CN113252741A (en) * | 2021-05-17 | 2021-08-13 | 东南大学 | Flexible humidity sensor and preparation method thereof |
| US11856664B2 (en) * | 2017-02-14 | 2023-12-26 | National Institute For Materials Science | Method and system for preventing dew condensation and light scattering due to dew condensation |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103698368A (en) * | 2013-12-19 | 2014-04-02 | 无锡康森斯克电子科技有限公司 | Sensor element, sensor and humidity sensor element |
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
| CN104062322A (en) * | 2014-07-10 | 2014-09-24 | 苏州能斯达电子科技有限公司 | Humidity sensor and preparation method thereof |
| CN105300540A (en) * | 2015-09-22 | 2016-02-03 | 上海申矽凌微电子科技有限公司 | Manufacturing method of integrated all-in-one temperature and humidity sensor chip |
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| CN105181764A (en) * | 2015-09-25 | 2015-12-23 | 上海集成电路研发中心有限公司 | Humidity sensor and manufacturing method |
| CN105502282A (en) * | 2015-11-30 | 2016-04-20 | 上海集成电路研发中心有限公司 | Method for manufacturing MEMS humidity sensor |
| US11856664B2 (en) * | 2017-02-14 | 2023-12-26 | National Institute For Materials Science | Method and system for preventing dew condensation and light scattering due to dew condensation |
| CN107087357A (en) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | A kind of manufacture method of Temperature Humidity Sensor and Temperature Humidity Sensor |
| CN107087357B (en) * | 2017-06-27 | 2023-10-13 | 深圳刷新生物传感科技有限公司 | Temperature and humidity sensor and manufacturing method thereof |
| CN113167662A (en) * | 2018-09-17 | 2021-07-23 | 哈钦森技术股份有限公司 | Integrated sensor and circuit |
| CN113167662B (en) * | 2018-09-17 | 2023-07-28 | 哈钦森技术股份有限公司 | Device with integrated circuit and sensor and method of forming the same |
| CN111382829A (en) * | 2018-12-27 | 2020-07-07 | 拉碧斯半导体株式会社 | IC tag and method for manufacturing IC tag |
| CN112485298A (en) * | 2020-11-06 | 2021-03-12 | 电子科技大学 | Manufacturing method of polyvinylidene fluoride-based flexible humidity sensor |
| CN113252741A (en) * | 2021-05-17 | 2021-08-13 | 东南大学 | Flexible humidity sensor and preparation method thereof |
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| CN102692432B (en) | 2014-04-30 |
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