CN102565149A - Capacitance humidity sensor with temperature drift compensation and making method thereof - Google Patents
Capacitance humidity sensor with temperature drift compensation and making method thereof Download PDFInfo
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- CN102565149A CN102565149A CN2011104567578A CN201110456757A CN102565149A CN 102565149 A CN102565149 A CN 102565149A CN 2011104567578 A CN2011104567578 A CN 2011104567578A CN 201110456757 A CN201110456757 A CN 201110456757A CN 102565149 A CN102565149 A CN 102565149A
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Abstract
The invention discloses a capacitance humidity sensor with temperature drift compensation and a making method thereof. The sensor main body adopts the surface micro-mechanical machining technology to form an isolation layer on a semiconductor substrate and a humidity sensing cantilever and upper and lower electrodes on the isolation layer, wherein a first humidity sensitive material layer, a humidity isolation layer and a second humidity sensitive material layer are piled up on the humidity sensing cantilever from bottom to top; and the upper electrode is covered on the lower surface of the first humidity sensitive material layer and forms sensitive capacitance with the lower electrode. When the ambient humidity changes, the size changes of the first humidity sensitive material layer and the second humidity sensitive material layer are different, so as to enable the humidity sensing cantilever to be deformed and then the upper electrode to be deformed, as a result, the capacitance between the upper and the lower electrodes is changed, and the change of the capacitance value can represent the change of the ambient temperature. When the ambient temperature changes, if the size changes of the two humidity sensitive material layers of the humidity sensing cantilever are the same, the effect of phase drift compensation is achieved, and the capacitance humidity sensor with the temperature drift compensation has the outstanding property of low temperature drift.
Description
Technical field
The present invention relates to adopt the humidity sensor technical field of surface micromachined realization, particularly a kind of capacitive humidity sensor and preparation method thereof with temperature drift compensation.
Background technology
Humidity sensor is widely used, and traditional humidity sensor is main with hygristor etc., though this type sensor cost is low, precision is relatively poor.Capacitance type humidity sensor is another kind of common humidity sensor structure, and such transducer sensitivity is high, is the principal mode of present humidity sensor.Capacitor type humidity sensor structure adopts macromolecular material as humidity-sensitive medium usually, because the thermal expansivity of wet sensory material causes humidity sensing characteristic also to change more greatly, therefore need do temperature compensation.Humidity sensor like Switzerland Sensirion adopts the interdigitated configuration of two unanimities to constitute the humidity sensitive head, and one of them is to humidity sensitive, and one insensitive.Owing to have same temperature characterisitic, through the electric capacity difference, compensated the influence of temperature during measurement to humidity sensitive.But the defective of this structure is: the one, and it is big to account for chip area, and the 2nd, need complicated circuit to realize electric capacity difference compensation problem.Therefore how sensor designs can be tested simply again in the satisfied temperature compensation, is still the emphasis of present industry research.
Summary of the invention
The purpose of this invention is to provide a kind of capacitive humidity sensor with temperature drift compensation, it is simple in structure, and when can normally perception humidity changing, the temperature that can the compensative material temperature effect causes is floated problem.The present invention also provides this method for making with capacitive humidity sensor of temperature drift compensation in addition.
For realizing above-mentioned purpose, the technical scheme that the present invention takes is: a kind of capacitive humidity sensor with temperature drift compensation, and it comprises semiconductor substrate layer, insulation course, the wet cantilever of sense and induction electrode; Wherein:
Insulation course is covered in the upper surface of semiconductor substrate layer;
One end of the wet cantilever of sense is fixed on the insulation course, and the other end is positioned at the top of insulation course and unsettled; The wet cantilever of sense is made up of the first stacked successively from top to bottom humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material layer, and wherein the first humidity-sensitive material layer is identical with the thickness of the second humidity-sensitive material layer;
Induction electrode comprises top electrode and bottom electrode; Top electrode covers the lower surface of the first humidity-sensitive material layer in the wet cantilever of sense, and fixing; Bottom electrode is fixed on the insulation course; And the unsettled end of top electrode is parallel to bottom electrode, and is positioned at the top of bottom electrode.
Stress for more tangible delivery context humidity causes increases the sensitivity of humidity sensor, and the thickness of the first humidity-sensitive material layer, the second humidity-sensitive material layer is greater than the thickness of moisture barrier, top electrode in the wet cantilever of sense.
The above-mentioned method with capacitive humidity sensor of temperature drift compensation of manufacturing provided by the invention may further comprise the steps:
(1) chooses the material of silicon chip as semiconductor substrate layer;
(2) semiconductor substrate layer is carried out oxidation, make to form insulation course in the upper surface oxidation of semiconductor substrate layer;
(3) sputter layer of metal film on insulation course, and chemical wet etching forms bottom electrode;
(4) spin coating photoresist on insulation course, and photoetching forms sacrifice layer; Sacrifice layer covers an end of bottom electrode;
(5) at sacrifice layer upper surface sputter layer of metal film, and metallic film is carried out photoetching form top electrode, and an end of top electrode is parallel to bottom electrode, and be positioned at the top of bottom electrode;
(6) at upper surface spin coating one deck humidity-sensitive material of top electrode, as the first humidity-sensitive material layer; And form at a distance from wet film, as moisture barrier through the plasma reinforced chemical meteorology deposition method at the upper surface of the first humidity-sensitive material layer; Again at upper surface spin coating one deck humidity-sensitive material of moisture barrier, as the second humidity-sensitive material layer;
(7) integral body that the first humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material laminated is formed is carried out photoetching, makes top electrode cover the lower surface of the first humidity-sensitive material layer;
(8) utilize the sacrifice layer that forms in the propyl alcohol release steps (4), it is unsettled to make the humidity-sensitive material layer of winning, moisture barrier, the second humidity-sensitive material layer and top electrode be positioned at the end of sacrifice layer top; The integral body that the first humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material laminated form is cantilever design, is the wet cantilever of sense.
Capacitive humidity sensor with temperature drift compensation of the present invention is when using, and top electrode and the bottom electrode on the insulation course on the wet cantilever of sense form a sensitization capacitance.When ambient humidity changes, be exposed to environment above being arranged in and receive the ambient humidity influence by the second humidity-sensitive material layer, thereby cause volume change; Then can not receive the ambient humidity influence at the first humidity-sensitive material layer of moisture barrier between top electrode, perhaps influence is very little, so its constancy of volume perhaps changes also very little; But since the first humidity-sensitive material layer between the second humidity-sensitive material layer for interfixing, two-layer volume change is inconsistent must to cause the whole distortion of the wet cantilever of sense, thus the distortion of drive top electrode has also just changed the capacitance of sensitization capacitance.
Beneficial effect of the present invention is: when can sensitive perception ambient humidity changing, the present invention can overcome the temperature that the material temperature effect causes and float problem.Promptly when environment temperature changes; Because the first humidity-sensitive material layer is identical in the material of the second humidity-sensitive material layer in the wet cantilever of sense, and consistency of thickness, so have identical expansion coefficient; Volume change is consistent; Then can not exert an influence, just can not change the electric capacity of top crown between bottom crown, the excellent properties that promptly has low temperature drift yet top crown.
In addition, the present invention is simple in structure, and surface capable of using is that Machining Technology is made, and technology is also very simple.
Description of drawings
Shown in Figure 1 is the structural representation with capacitive humidity sensor of temperature drift compensation of the present invention.
Embodiment
For making content of the present invention more obviously understandable, further describe below in conjunction with accompanying drawing and embodiment.
As shown in Figure 1, the capacitive humidity sensor with temperature drift compensation of the present invention comprises semiconductor substrate layer 1, insulation course 2, the wet cantilever of sense and induction electrode; Wherein:
One end of the wet cantilever of sense is fixed on the insulation course 2, and the other end is positioned at the top of insulation course 2 and unsettled; The wet cantilever of sense is made up of the stacked successively first humidity-sensitive material layer 41, moisture barrier 42 and the second humidity-sensitive material layer 43 from top to bottom, and wherein the first humidity-sensitive material layer 41 is identical with the thickness of the second humidity-sensitive material layer 43;
Induction electrode comprises top electrode 31 and bottom electrode 32; Top electrode 31 covers the lower surface of the first humidity-sensitive material layer 41 in the wet cantilever of sense, and fixing; Bottom electrode 32 is fixed on the insulation course 2; And top electrode 31 unsettled ends are parallel to bottom electrode 32, and are positioned at the top of bottom electrode 32.
Stress for more tangible delivery context humidity causes increases the sensitivity of humidity sensor, and the thickness of the first humidity-sensitive material layer 41, the second humidity-sensitive material layer 43 is greater than the thickness of moisture barrier 42, top electrode 31 in the wet cantilever of sense.
Make above-mentioned method, may further comprise the steps with capacitive humidity sensor of temperature drift compensation:
(1) chooses the material of silicon chip as semiconductor substrate layer 1;
(2) semiconductor substrate layer 1 is carried out oxidation, make to form insulation course 2 in the upper surface oxidation of semiconductor substrate layer;
(3) sputter layer of metal film on insulation course 2, and chemical wet etching forms bottom electrode 32;
(4) spin coating photoresist on insulation course 2, and photoetching forms sacrifice layer; Sacrifice layer covers an end of bottom electrode 32;
(5) at sacrifice layer upper surface sputter layer of metal film, and metallic film is carried out photoetching form top electrode 31, and an end of top electrode 31 is parallel to bottom electrode 32, and be positioned at the top of electric 32 utmost points down;
(6) at upper surface spin coating one deck humidity-sensitive material of top electrode 31, as the first humidity-sensitive material layer 41; And form at a distance from wet film, as moisture barrier 42 through the plasma reinforced chemical meteorology deposition method at the upper surface of the first humidity-sensitive material layer 41; Again at upper surface spin coating one deck humidity-sensitive material of moisture barrier 42, as the second humidity-sensitive material layer 43;
(7) integral body of the first humidity-sensitive material layer 41, moisture barrier 42 and the 43 stacked formation of the second humidity-sensitive material layer is carried out photoetching, make top electrode 32 cover the lower surface of first humidity-sensitive material 41;
(8) utilize the sacrifice layer that forms in the propyl alcohol release steps (4), it is unsettled to make the humidity-sensitive material layer 41 of winning, moisture barrier 42, the second humidity-sensitive material layer 43 and top electrode 31 be positioned at the end of sacrifice layer top; The integral body of the first humidity-sensitive material layer 41, moisture barrier 42 and the 43 stacked formation of the second humidity-sensitive material layer is cantilever design, is the wet cantilever of sense.
Capacitive humidity sensor with temperature drift compensation is when using, and top electrode and the bottom electrode on the insulation course on the wet cantilever of sense form a sensitization capacitance.When ambient humidity changes, be exposed to environment above being arranged in and receive the ambient humidity influence by the second humidity-sensitive material layer, thereby cause volume change; Then can not receive the ambient humidity influence at the first humidity-sensitive material layer of moisture barrier between top electrode, perhaps influence is very little, so its constancy of volume perhaps changes also very little; But since the first humidity-sensitive material layer between the second humidity-sensitive material layer for interfixing, two-layer volume change is inconsistent must to cause the whole distortion of the wet cantilever of sense, thus the distortion of drive top electrode has also just changed the capacitance of sensitization capacitance.
And when environment temperature changes; Because the first humidity-sensitive material layer is identical in the material of the second humidity-sensitive material layer in the wet cantilever of sense, and consistency of thickness, so have identical expansion coefficient; Volume change is consistent; Then can not exert an influence, just can not change the electric capacity of top crown between bottom crown, the excellent properties that promptly has low temperature drift yet top crown.
The case of practical implementation described in the present invention is merely preferable case study on implementation of the present invention, is not to be used for limiting practical range of the present invention.Be that all equivalences of doing according to the content of claim of the present invention change and modification, all should be as technological category of the present invention.
Claims (3)
1. the capacitive humidity sensor with temperature drift compensation is characterized in that, comprises semiconductor substrate layer, insulation course, the wet cantilever of sense and induction electrode; Wherein:
Insulation course is covered in the upper surface of semiconductor substrate layer;
One end of the wet cantilever of sense is fixed on the insulation course, and the other end is positioned at the top of insulation course and unsettled; The wet cantilever of sense is made up of the first stacked successively from top to bottom humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material layer; Wherein the first humidity-sensitive material layer is identical with the thickness of the second humidity-sensitive material layer;
Induction electrode comprises top electrode and bottom electrode; Top electrode covers the lower surface of the first humidity-sensitive material layer in the wet cantilever of sense, and fixing; Bottom electrode is fixed on the insulation course; And the unsettled end of top electrode is parallel to bottom electrode, and is positioned at the top of bottom electrode.
2. the capacitive humidity sensor with temperature drift compensation according to claim 1 is characterized in that, the thickness of the first humidity-sensitive material layer, the second humidity-sensitive material layer is greater than the thickness of moisture barrier, top electrode in the wet cantilever of sense.
3. make claim 1 or 2 described methods for one kind, it is characterized in that, may further comprise the steps with capacitive humidity sensor of temperature drift compensation:
(1) chooses the material of silicon chip as semiconductor substrate layer;
(2) semiconductor substrate layer is carried out oxidation, make to form insulation course in the upper surface oxidation of semiconductor substrate layer;
(3) sputter layer of metal film on insulation course, and chemical wet etching forms bottom electrode;
(4) spin coating photoresist on insulation course, and photoetching forms sacrifice layer; Sacrifice layer covers an end of bottom electrode;
(5) at sacrifice layer upper surface sputter layer of metal film, and metallic film is carried out photoetching form top electrode, and an end of top electrode is parallel to bottom electrode, and be positioned at the top of bottom electrode;
(6) at upper surface spin coating one deck humidity-sensitive material of top electrode, as the first humidity-sensitive material layer; And form at a distance from wet film, as moisture barrier through the plasma reinforced chemical meteorology deposition method at the upper surface of the first humidity-sensitive material layer; Again at upper surface spin coating one deck humidity-sensitive material of moisture barrier, as the second humidity-sensitive material layer;
(7) integral body that the first humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material laminated is formed is carried out photoetching, makes top electrode cover the lower surface of the first humidity-sensitive material layer;
(8) utilize the sacrifice layer that forms in the propyl alcohol release steps (4), it is unsettled to make the humidity-sensitive material layer of winning, moisture barrier, the second humidity-sensitive material layer and top electrode be positioned at the end of sacrifice layer top; The integral body that the first humidity-sensitive material layer, moisture barrier and the second humidity-sensitive material laminated form is cantilever design, is the wet cantilever of sense.
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102798403A (en) * | 2012-08-21 | 2012-11-28 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN102944325A (en) * | 2012-11-29 | 2013-02-27 | 东南大学 | Passive wireless temperature and humidity integrated sensor |
| CN103792267A (en) * | 2014-02-19 | 2014-05-14 | 苏州能斯达电子科技有限公司 | Differential capacitive humidity sensor |
| CN105809921A (en) * | 2014-12-31 | 2016-07-27 | 青岛中科软件股份有限公司 | Temperature and humidity acquiring system based on wireless sensor network |
| US9529391B2 (en) | 2013-09-27 | 2016-12-27 | Apple Inc. | Button retention, assembly, and water sealing |
| US9573165B2 (en) | 2014-08-22 | 2017-02-21 | Apple Inc. | Hydrophobic mesh cover |
| US9625944B2 (en) | 2013-09-29 | 2017-04-18 | Apple Inc. | Waterproof port for electronic devices |
| US9627797B2 (en) | 2015-07-21 | 2017-04-18 | Apple Inc. | Ejection assembly with plug feature |
| US9716934B2 (en) | 2015-04-24 | 2017-07-25 | Apple Inc. | Liquid ingress-redirecting acoustic device reservoir |
| US9780554B2 (en) | 2015-07-31 | 2017-10-03 | Apple Inc. | Moisture sensors |
| US9980026B2 (en) | 2013-09-30 | 2018-05-22 | Apple Inc. | Method for clearing water from acoustic port and membrane |
| CN108362740A (en) * | 2017-12-27 | 2018-08-03 | 武汉微纳传感技术有限公司 | A kind of metal-oxide semiconductor (MOS) gas sensor and preparation method thereof |
| US10149396B2 (en) | 2015-09-30 | 2018-12-04 | Apple Inc. | Circuit assembly for an electronic device |
| US10165694B1 (en) | 2017-09-11 | 2018-12-25 | Apple Inc. | Concealed barometric vent for an electronic device |
| CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
| US10784062B2 (en) | 2016-09-08 | 2020-09-22 | Apple Inc. | Ingress prevention for keyboards |
| CN111735859A (en) * | 2020-08-21 | 2020-10-02 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
| US11614716B2 (en) | 2019-09-23 | 2023-03-28 | Apple Inc. | Pressure-sensing system for a wearable electronic device |
| US11860585B2 (en) | 2020-06-17 | 2024-01-02 | Apple Inc. | Wearable electronic device with a compressible air-permeable seal |
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Cited By (26)
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| CN102798403B (en) * | 2012-08-21 | 2014-10-22 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN102798403A (en) * | 2012-08-21 | 2012-11-28 | 江苏物联网研究发展中心 | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof |
| CN102944325A (en) * | 2012-11-29 | 2013-02-27 | 东南大学 | Passive wireless temperature and humidity integrated sensor |
| CN102944325B (en) * | 2012-11-29 | 2014-03-12 | 东南大学 | Passive wireless temperature and humidity integrated sensor |
| US10078350B2 (en) | 2013-09-27 | 2018-09-18 | Apple Inc. | Button retention, assembly, and water sealing |
| US9529391B2 (en) | 2013-09-27 | 2016-12-27 | Apple Inc. | Button retention, assembly, and water sealing |
| US9625944B2 (en) | 2013-09-29 | 2017-04-18 | Apple Inc. | Waterproof port for electronic devices |
| US9980026B2 (en) | 2013-09-30 | 2018-05-22 | Apple Inc. | Method for clearing water from acoustic port and membrane |
| CN103792267A (en) * | 2014-02-19 | 2014-05-14 | 苏州能斯达电子科技有限公司 | Differential capacitive humidity sensor |
| CN103792267B (en) * | 2014-02-19 | 2015-12-02 | 苏州能斯达电子科技有限公司 | A kind of differential capacitance type humidity sensor |
| US9573165B2 (en) | 2014-08-22 | 2017-02-21 | Apple Inc. | Hydrophobic mesh cover |
| CN105809921A (en) * | 2014-12-31 | 2016-07-27 | 青岛中科软件股份有限公司 | Temperature and humidity acquiring system based on wireless sensor network |
| US9716934B2 (en) | 2015-04-24 | 2017-07-25 | Apple Inc. | Liquid ingress-redirecting acoustic device reservoir |
| US9627797B2 (en) | 2015-07-21 | 2017-04-18 | Apple Inc. | Ejection assembly with plug feature |
| US9780554B2 (en) | 2015-07-31 | 2017-10-03 | Apple Inc. | Moisture sensors |
| US10149396B2 (en) | 2015-09-30 | 2018-12-04 | Apple Inc. | Circuit assembly for an electronic device |
| US10784062B2 (en) | 2016-09-08 | 2020-09-22 | Apple Inc. | Ingress prevention for keyboards |
| US10165694B1 (en) | 2017-09-11 | 2018-12-25 | Apple Inc. | Concealed barometric vent for an electronic device |
| US10765019B2 (en) | 2017-09-11 | 2020-09-01 | Apple Inc. | Concealed barometric vent for an electronic device |
| CN108362740A (en) * | 2017-12-27 | 2018-08-03 | 武汉微纳传感技术有限公司 | A kind of metal-oxide semiconductor (MOS) gas sensor and preparation method thereof |
| CN110006549A (en) * | 2019-03-27 | 2019-07-12 | 电子科技大学 | A kind of flexible Temperature Humidity Sensor of integral structure and preparation method thereof |
| US11614716B2 (en) | 2019-09-23 | 2023-03-28 | Apple Inc. | Pressure-sensing system for a wearable electronic device |
| US11860585B2 (en) | 2020-06-17 | 2024-01-02 | Apple Inc. | Wearable electronic device with a compressible air-permeable seal |
| CN111735859A (en) * | 2020-08-21 | 2020-10-02 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
| CN111735859B (en) * | 2020-08-21 | 2021-07-20 | 深圳第三代半导体研究院 | GaN-based gas sensor and preparation method thereof |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
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