CN103487474A - MEMS (micro-electromechanical systems) capacitive humidity sensor with high sensitivity and fast response - Google Patents
MEMS (micro-electromechanical systems) capacitive humidity sensor with high sensitivity and fast response Download PDFInfo
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- CN103487474A CN103487474A CN201310461445.5A CN201310461445A CN103487474A CN 103487474 A CN103487474 A CN 103487474A CN 201310461445 A CN201310461445 A CN 201310461445A CN 103487474 A CN103487474 A CN 103487474A
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Abstract
The invention discloses an MEMS capacitive humidity sensor with high sensitivity and fast response. The sensor comprises a substrate (1) and an interdigital positive electrode (1-2) covered with a humidity sensing medium (2), wherein the substrate (1) is located at the bottom of a detection capacitor and has an action of a base; the interdigital positive electrode (1-2) and the surface of an interdigital negative electrode (1-3) are covered with the humidity sensing medium (2), a cavity (1-5) is formed between the interdigital negative electrode (1-3) and the substrate (1), and the humidity sensing medium (2) and an air layer (3) between the interdigital positive electrode (1-2) and the interdigital negative electrode (1-3) form a humidity sensing structure of the detection capacitor which adopts an interdigital cantilever beam structure. The capacitive humidity sensor has the advantages of high sensitivity, fast response, simple structure, convenience in processing, small stray capacitance and the like.
Description
Technical field
The present invention relates to a kind of MEMS(microelectromechanical systems based on bulk silicon technological) capacitance type humidity sensor, especially a kind of porous silicon and air layer capacitance type humidity sensor as the interdigital structure of medium that adopts.
Background technology
Moisture measurement has a wide range of applications in industry and agricultural and daily life, is also to study the indispensable factor of meteorological condition.Humidity sensor, as the important component part of humidity measurement system, has developed a lot of years.Adopt the humidity sensor of silica-based manufacture also to have the more than ten years, according to job category, can be divided into condenser type, resistance-type, pressure resistance type, beam type, thermojunction type.Wherein capacitance type humidity sensor has high sensitivity, low-power consumption, and good temperature characterisitic, firm in structure, the advantages such as sensitivity height to external stress, make its research the most extensive.
At present, main capacitance type humidity sensor has two kinds, and a kind of is interdigital capacitor formula humidity sensor, and interdigital capacitor formula humidity sensor commonly used forms by surface processing technique, its sensitization capacitance is less, and stray capacitance is large, be unfavorable for measuring, another kind is the humidity sensor of sandwich structure, this sensor is placed between the sensitization capacitance pole plate wet sensory material as humidity-sensitive medium, although highly sensitive, stray capacitance is little, response speed is slow.
Summary of the invention
Technical matters: the purpose of this invention is to provide a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has, the technical matters solved is, for the above-mentioned defect of capacitance type sensor in prior art, propose a kind of simple in structure, easy to process, sensitization capacitance is large, the capacitance type humidity sensor that stray capacitance is little.
Technical scheme: the MEMS capacitance type humidity sensor with the quick response of high sensitivity of the present invention comprises substrate, is coated with the interdigital positive electrode of humidity-sensitive medium; Wherein, substrate is positioned at the bottom of Detection capacitance, plays the pedestal effect, and humidity-sensitive medium covers the surface of interdigital positive electrode, interdigital negative electrode, be provided with cavity between interdigital negative electrode and substrate, the air layer between humidity-sensitive medium and interdigital positive electrode, interdigital negative electrode forms the wet structure of sense of Detection capacitance.
Described humidity sensing layer is porous silicon layer.
Described interdigital positive electrode, interdigital negative electricity be low-resistance silicon very.
Described interdigital positive electrode, interdigital negative electricity be the interdigital structure with high-aspect-ratio of bulk silicon technological processing very.
Between the interdigital structure of described interdigital positive electrode, interdigital negative electrode and substrate, it is air layer.
Described substrate is glass.
Principle of work with highly sensitive capacitance type humidity sensor of the present invention is: in technical scheme of the present invention, described capacitance type humidity sensor comprises dielectric layer, air layer and interdigital electrode, wherein, interdigital capacitor is the cantilever beam structure shape, wherein, dielectric layer, on interdigital electrode, has covered between dielectric layer interdigital and has also had air layer between interdigital and substrate.After the moisture absorption of humidity-sensitive medium layer, its specific inductive capacity can change, and then causes Detection capacitance generation deformation, thereby realizes the moisture measurement function.
Beneficial effect: as a kind of improvement to technical scheme of the present invention, the interdigital structure with high-aspect-ratio that interdigital electrode is bulk silicon technological processing.Processing cost, the implementation of manufacture craft and the size of sensitization capacitance of comprehensive its material, the interdigital electrode of body processing technology processing has advantages of that cost is low, manufacture craft is simple, sensitization capacitance is large.
As a kind of improvement to technical scheme of the present invention, substrate is glass substrate, by bonding technology and low-resistance silicon, forms structure.The cost of comprehensive selected materials, manufacture craft and material property, select glass substrate can reduce stray capacitance, the advantage of silicon on glass bonding technical maturity.
A kind of improvement as to technical scheme of the present invention, have air chamber between interdigital structure and glass substrate, can, so that the interdigital structure of high-aspect-ratio can be realized two-sided sense to wet, improve the corresponding time.
A kind of improvement as to technical scheme of the present invention, have air chamber between interdigital structure, make the response time improve.
The accompanying drawing explanation
Fig. 1 is the vertical view of Relative Humidity Sensor of the present invention.
Fig. 2 is the sectional view of Relative Humidity Sensor of the present invention.
In figure, have: substrate 1, interdigital positive electrode 1-2, interdigital negative electrode 1-3, clearance 1-4, cavity 1-5, humidity-sensitive medium 2, air layer 3.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The preferred embodiment of the present invention is as follows:
As shown in Figure 1, the described capacitance type humidity sensor of the present embodiment comprises the Detection capacitance that is the cantilever beam structure shape, and this sensor comprises substrate 1, is coated with the interdigital positive electrode 1-2 of humidity-sensitive medium 2; Wherein, substrate 1 is positioned at the bottom of Detection capacitance, play the pedestal effect, humidity-sensitive medium 2 covers the surface of interdigital positive electrode 1-2, interdigital negative electrode 1-3, be provided with cavity 1-5 between interdigital positive electrode 1-2, interdigital negative electrode 1-3 and substrate 1, the dielectric layer that air layer between humidity-sensitive medium 2 and interdigital positive electrode 1-2, interdigital negative electrode 1-3 3 forms Detection capacitances is used for the variation of the specific inductive capacity between the caused electrode of responsive humidity; Described Detection capacitance is interdigital cantilever beam structure.
In the present embodiment, substrate 1 is selected glass substrate, and humidity-sensitive medium 2 is porous silicon, and interdigital positive electrode 1-2 and interdigital negative electrode 1-3 are low-resistance silicon.
As shown in Figure 2, the manufacturing process of the described capacitance type humidity sensor of the present embodiment is as follows: at first, select low-resistance silicon as original material, photoetching process and wet corrosion technique are carried out in its back side, form the cavity 1-5 at the back side; Carry out silicon chip and glass substrate 1 bonding, form the cavity structure with base; Front side of silicon wafer is carried out to photoetching and deep reaction ion etching technique, form the interdigital capacitor structure with high-aspect-ratio, form interdigital positive electrode 1-2 and interdigital negative electrode 1-3; Pass to electric current using the silicon interdigital structure of moulding as anode in the HF acid solution and carry out anodic oxidation, can obtain humidity-sensitive medium 2 at silicon chip surface.
In the present embodiment, positive and negative electrode, porous silicon humidity sensing layer and air layer form the Detection capacitance of interdigital structure shape, when humidity changes, because the poriness of porous silicon can change its specific inductive capacity, and then cause electric capacity generation deformation, and due to air layer being arranged between porous silicon, thereby the slow problem of rate of propagation while not existing the polymkeric substance sense wet, so the response time of this capacitance type humidity sensor be greatly improved.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improvement and conversion all should belong to the protection domain of claims of the present invention.
Claims (6)
1. one kind has the high sensitivity MEMS capacitance type humidity sensor of response fast, it is characterized in that, this sensor comprises substrate (1), is coated with the interdigital positive electrode (1-2) of humidity-sensitive medium (2); Wherein, substrate (1) is positioned at the bottom of Detection capacitance, play the pedestal effect, humidity-sensitive medium (2) covers the surface of interdigital positive electrode (1-2), interdigital negative electrode (1-3), be provided with cavity (1-5) between interdigital negative electrode (1-3) and substrate (1), the air layer (3) between humidity-sensitive medium (2) and interdigital positive electrode (1-2), interdigital negative electrode (1-3) forms the wet structure of sense of Detection capacitance.
2. a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has according to claim 1, is characterized in that, described humidity sensing layer (2) is porous silicon layer.
3. a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has according to claim 1, is characterized in that, described interdigital positive electrode (1-2), interdigital negative electrode (1-3) are low-resistance silicon.
4. a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has according to claim 1, is characterized in that the interdigital structure that described interdigital positive electrode (1-2), interdigital negative electrode (1-3) are bulk silicon technological processing.
5. a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has according to claim 1, is characterized in that, between the interdigital structure of described interdigital positive electrode (1-2), interdigital negative electrode (1-3) and substrate (1), is air layer.
6. a kind of high sensitivity MEMS capacitance type humidity sensor of response fast that has according to claim 1, is characterized in that, described substrate (1) is glass.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103792267A (en) * | 2014-02-19 | 2014-05-14 | 苏州能斯达电子科技有限公司 | Differential capacitive humidity sensor |
| CN104089990A (en) * | 2014-07-15 | 2014-10-08 | 合肥工业大学 | Relative humidity sensor of monolithic integrated porous silicon and preparation method of humidity sensor |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
| CN106197537A (en) * | 2016-06-29 | 2016-12-07 | 东南大学 | The passive wireless sensor that a kind of humiture is integrated |
| CN106796192A (en) * | 2014-08-20 | 2017-05-31 | ams国际有限公司 | Capacitance type sensor |
| CN107884457A (en) * | 2017-09-28 | 2018-04-06 | 东南大学 | A kind of humidity sensor based on metamaterial structure |
| CN110108763A (en) * | 2019-04-29 | 2019-08-09 | 南京邮电大学 | A kind of Low Drift Temperature capacitance type humidity sensor |
| CN113418969A (en) * | 2021-06-07 | 2021-09-21 | 武汉大学 | High-sensitivity millimeter wave dielectric resonance sensor for biomedical detection |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104849325A (en) * | 2014-02-18 | 2015-08-19 | 无锡华润上华半导体有限公司 | MEMS humidity sensor compatible with CMOS process, and manufacturing method thereof |
| CN103792267B (en) * | 2014-02-19 | 2015-12-02 | 苏州能斯达电子科技有限公司 | A kind of differential capacitance type humidity sensor |
| CN103792267A (en) * | 2014-02-19 | 2014-05-14 | 苏州能斯达电子科技有限公司 | Differential capacitive humidity sensor |
| CN104089990A (en) * | 2014-07-15 | 2014-10-08 | 合肥工业大学 | Relative humidity sensor of monolithic integrated porous silicon and preparation method of humidity sensor |
| CN104089990B (en) * | 2014-07-15 | 2016-08-24 | 合肥工业大学 | A kind of relative humidity sensor of single-chip integration porous silicon and preparation method thereof |
| CN106796192A (en) * | 2014-08-20 | 2017-05-31 | ams国际有限公司 | Capacitance type sensor |
| US10274450B2 (en) | 2014-08-20 | 2019-04-30 | Ams International Ag | Capacitive sensor |
| CN106796192B (en) * | 2014-08-20 | 2019-10-29 | ams国际有限公司 | Capacitance type sensor |
| CN104634833A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitance-type relative humidity sensor and preparation method thereof |
| CN104634832A (en) * | 2015-02-28 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | CMOS MEMS capacitance-type humidity sensor and preparation method thereof |
| CN104634833B (en) * | 2015-02-28 | 2017-09-26 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS capacitive relative humidity sensor and preparation method thereof |
| CN106197537A (en) * | 2016-06-29 | 2016-12-07 | 东南大学 | The passive wireless sensor that a kind of humiture is integrated |
| CN106197537B (en) * | 2016-06-29 | 2018-02-23 | 东南大学 | A kind of integrated passive wireless sensor of humiture |
| CN107884457A (en) * | 2017-09-28 | 2018-04-06 | 东南大学 | A kind of humidity sensor based on metamaterial structure |
| CN107884457B (en) * | 2017-09-28 | 2019-07-12 | 东南大学 | A kind of humidity sensor based on metamaterial structure |
| CN110108763A (en) * | 2019-04-29 | 2019-08-09 | 南京邮电大学 | A kind of Low Drift Temperature capacitance type humidity sensor |
| CN113418969A (en) * | 2021-06-07 | 2021-09-21 | 武汉大学 | High-sensitivity millimeter wave dielectric resonance sensor for biomedical detection |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: SOUTHEAST University Address before: 211103 No. 5 Runfa Road, Jiangning District, Nanjing City, Jiangsu Province Patentee before: Southeast University |
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Granted publication date: 20160817 Termination date: 20210930 |