CN110108763A - A kind of Low Drift Temperature capacitance type humidity sensor - Google Patents
A kind of Low Drift Temperature capacitance type humidity sensor Download PDFInfo
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- CN110108763A CN110108763A CN201910352643.5A CN201910352643A CN110108763A CN 110108763 A CN110108763 A CN 110108763A CN 201910352643 A CN201910352643 A CN 201910352643A CN 110108763 A CN110108763 A CN 110108763A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 40
- 229920005591 polysilicon Polymers 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 238000004873 anchoring Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 206010070834 Sensitisation Diseases 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000008313 sensitization Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/221—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance by investigating the dielectric properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/227—Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/221—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance by investigating the dielectric properties
- G01N2027/222—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance by investigating the dielectric properties for analysing gases
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Abstract
The invention discloses a kind of Low Drift Temperature capacitance type humidity sensors, including substrate, insulating layer and the first passivation layer are disposed on substrate, polysilicon electrode is provided on first passivation layer, it is provided with interdigital negative electrode and interdigital positive electrode above polysilicon electrode, interdigital positive electrode surface is covered with one layer of humidity sensitive medium；Interdigital negative electrode and interdigital positive electrode form interdigital structure, there is the first air layer between interdigital negative electrode and interdigital positive electrode, constitute horizontal capacitor；Interdigital positive electrode is directly connected to the second polysilicon electrode below, the second air layer is provided between interdigital negative electrode and the first polysilicon electrode below, and first is covered with the second passivation layer on polysilicon electrode, interdigital negative electrode and the first polysilicon electrode constitute vertical capacitor.Low Drift Temperature capacitance type humidity sensor provided by the invention has temperature drift low, and response is fast, and area is relatively small, integrated advantage.
Description
Technical field
Capacitance type humidity sensor the present invention relates to one kind based on MEMS (microelectromechanical systems) technique, especially one
Kind has the sensitive capacitance type humidity sensor structure of Low Drift Temperature.
Background technique
As society more modernizes, the application of humidity sensor in daily life is also further extensive.And humidity sensor
Device has the types such as condenser type, resistance-type, pressure resistance type, optical profile type, wherein capacitance type sensor relies on high sensitivity, small power consumption, system
It makes at low cost and the most extensive in commercialization.
Temperature drift is an important indicator of sensor performance.Temperature drift generally refers to, and can become with environment temperature
Change and change, is i.e. under different environment temperatures, sensor output signal can drift about working sensor, influence subsequent survey
Try accuracy and consistency.Especially in moisture measurement process, temperature influences the result of test very big.In order to a certain degree
Upper counteracting or the temperature drift for reducing its output frequently with some temperature-compensating measures, for example pass through the compensation electricity such as software or electric bridge
Road is designed to realize, design and implementation process is relatively complicated.
Summary of the invention
The object of the present invention is to provide a kind of Low Drift Temperature capacitance type humidity sensors, have temperature drift low, and response is fast, area phase
To the advantages that smaller, integrated.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of Low Drift Temperature capacitance type humidity sensor, including substrate are disposed with insulating layer and the first passivation on substrate
Layer, it is provided with polysilicon electrode on the first passivation layer, is provided with interdigital negative electrode and interdigital positive electrode above polysilicon electrode, pitches
It criticizes electrode surface and is covered with one layer of humidity sensitive medium；Interdigital negative electrode and interdigital positive electrode form interdigital structure, interdigital negative electricity
There is the first air layer between pole and interdigital positive electrode, constitutes horizontal capacitor；The polysilicon electrode includes being located at interdigital negative electrode
First polysilicon electrode of lower section and the second polysilicon electrode below interdigital positive electrode, interdigital positive electrode with below
Second polysilicon electrode is directly connected to, and is provided with the second air between interdigital negative electrode and the first polysilicon electrode below
Layer, and the second passivation layer is covered on the first polysilicon electrode, interdigital negative electrode and the first polysilicon electrode constitute vertical capacitor.
The horizontal capacitor and vertical capacitor are two groups, and by movable beam connection, movable beam respectively with two groups of capacitors
Interdigital negative electrode connection.
It further include a grade binding beam, grade binding beam is connect with movable beam, and grade binding beam is " H " shape, and four ends pass through anchoring area
It is fixed with substrate.
There is groove, grade binding beam is placed in the groove of substrate, and is arranged between grade binding beam and groove on the substrate
There is third air layer.
The material of the substrate is silicon.
The material of the interdigital negative electrode and interdigital positive electrode is nickel.
The material of the humidity sensitive medium is graphene oxide.
First passivation layer, the second passivation layer material be silicon nitride.
The material of the insulating layer is silica.
The operation principle of the present invention is that: Low Drift Temperature capacitance type humidity sensor of the invention includes humidity sensitive capacitance and temperature
Spend compensating electric capacity, wherein be covered with the interdigital positive electrode of humidity sensitive medium, exposed interdigital negative electrode and air layer, which are constituted, to be passed
The horizontal humidity sensitive capacitance structure of sensor, after humidity-sensitive medium layer moisture absorption, the dielectric of the mixing dielectric layer of the capacitance structure is normal
Number can change, and then detection capacitance is caused to change, to realize that lateral humidity sensitive capacitance becomes ambient humidity
The detection function of change.The interdigital positive electrode and polysilicon electrode for being covered with humidity sensitive medium constitute Vertical Temperature sensitization capacitance knot
Structure due to anchoring area thermal deformation and the thermal deformation of grade binding beam, causes between two pole plates of vertical capacitor when the temperature varies
Distance changes, and then realizes change of the longitudinal temperature sensitization capacitance to environment temperature between metal electrode and polysilicon electrode
The detection of change, the influence to compensation temperature for humidity measurement result.
The utility model has the advantages that interdigital electrode is the interdigital structure with high-aspect-ratio of bulk silicon technological processing, comprehensive in the present invention
For the size of the processing cost of its material, the implementation of manufacture craft and sensitization capacitance, the fork of body processing technology processing
Refer to that electrode has the advantages that at low cost, manufacture craft is simple, sensitization capacitance is big.Substrate is glass substrate, by bonding technology with
Low-resistance silicon forms structure.The cost of comprehensive selected materials for manufacture craft and material property, selects glass substrate that can subtract
The advantages of few parasitic capacitance, silicon on glass bonding technical maturity.Interdigital electrode can select PDMS injection molding and surface metalation is real
It is existing.The thermo-sensitive property of comprehensive PDMS and processing cost, the implementation of manufacture craft and the size of sensitization capacitance of material are come
It says, selecting PDMS processing technology to form interdigital electrode has the advantages that at low cost, manufacture craft is simple, temperature sensitivity is high.
Detailed description of the invention
Fig. 1 is the sectional view of Low Drift Temperature capacitance type humidity sensor of the invention；
Fig. 2 is the top view of Low Drift Temperature capacitance type humidity sensor of the invention；
Fig. 3 is vertical capacitor structural schematic diagram；
Fig. 4 is horizontal capacitor structural schematic diagram；
In figure, 1- substrate, 2- insulating layer, the first passivation layer of 3-, 4- polysilicon electrode, the first polysilicon electrode of 4-1-, 4-
The second polysilicon electrode of 2-, the second passivation layer of 5-, the interdigital negative electrode of 6-, 7- humidity sensitive medium, the interdigital positive electrode of 8-, 9- first
Air layer, the second air layer of 10-, 11- anchoring area, 12- third air layer, 13- grades of binding beams, 14- movable beam.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
Such as Fig. 1, a kind of Low Drift Temperature capacitance type humidity sensor of the invention, including substrate 1 are disposed on substrate absolutely
Edge layer 2 and the first passivation layer 3 are provided with polysilicon electrode 4 on first passivation layer 3, are provided with above polysilicon electrode 4 interdigital negative
Electrode 6 and interdigital positive electrode 8, interdigital 8 surface of positive electrode are covered with one layer of humidity sensitive medium 7；Interdigital negative electrode 6 and interdigital positive electricity
Pole 8 forms interdigital structure, there is the first air layer 9 between interdigital negative electrode 6 and interdigital positive electrode 8.As shown in figure 4, being covered with one layer
The interdigital positive electrode 8 of humidity sensitive medium 7, the first air layer 9, interdigital negative electrode 6 constitute horizontal capacitor Cmm。
Polysilicon electrode 4 includes positioned at the first polysilicon electrode 4-1 of interdigital 6 lower section of negative electrode and positioned at interdigital positive electrode
Second polysilicon electrode 4-2 of 8 lower sections, interdigital positive electrode 8 is directly connected to the second polysilicon electrode 4-2 below, interdigital
The second air layer 10, and the first polysilicon electrode 4-1 are provided between negative electrode 6 and the first polysilicon electrode 4-1 below
On be covered with the second passivation layer 5.As shown in figure 3, interdigital negative electrode 6, the second air layer 10, be covered with the second passivation layer 5 more than first
Crystal silicon electrode 4-1 constitutes vertical capacitor Cmp。
Such as Fig. 2, horizontal capacitor and vertical capacitor are two groups, are located at one end and centre on substrate 1, and two groups of capacitors are logical
The connection of movable beam 14 is crossed, movable beam 14 is connect with the interdigital negative electrode 6 of two groups of capacitors respectively.Feelings relative to only one group capacitor
Condition, is arranged two groups of capacitors, and resulting test result is more accurate.
Such as Fig. 2, movable beam 14 is also connected with there are two grade binding beam 13, and grade binding beam 13 is made of a crossbeam and two stringers,
Two stringers are located at the both ends of crossbeam, constitute " H " shape, and four ends of two stringers pass through anchoring area 11 and lining
Bottom 1 is fixed.The crossbeam of grade binding beam 13 is fixed in movable beam 14.One of grade binding beam 13 is placed between two groups of capacitors, separately
One grade binding beam 13 is placed between the end far from two groups of capacitors on that group capacitor among substrate 1 and substrate 1.
Such as Fig. 2, there is groove, grade binding beam 13 is placed in the groove of substrate 1, and grade binding beam 13 and groove on substrate 1
Between be provided with third air layer 12, enable grade binding beam 13 relative to substrate 1 move.
Preferably, the material of substrate 1 is silicon.The material of interdigital negative electrode 6 and interdigital positive electrode 8 is nickel.Humidity sensitive is situated between
The material of matter 7 is graphene oxide.First passivation layer 3, the second passivation layer 5 material be silicon nitride.The material of insulating layer 2 is two
Silica.
Capacitance type humidity sensor of the invention makes to obtain by the MEMS electroplating technology of standard, and whole process makes
Photoetching is carried out with six layers of mask plate, processing process simple procedure is as follows: firstly, being patterned quarter on a silicon substrate
Erosion, effect is finally to discharge entire device architecture, and structure is hanging, forms the cavity configuration on silicon structure, i.e. third in Fig. 2 is empty
Gas-bearing formation 12；Then silica of the deposit as insulating layer 2, as the silicon nitride of the first passivation layer 3, as the more of vertical capacitor
Crystal silicon electrode 4, and to the two it is graphical after, then carry out the depositing and patterning of the silicon nitride of second layer passivation layer 5.Deposit and figure
Shape oxide sacrificial layer forms the second air chamber 10, deposits the metal layer and seed layer of anchoring area 11, graphical photoresist, electricity
The metallic nickel of 20 μm of plating, finally discharges total.Finally lead to more Local C VD techniques, realizes graphite oxide on interdigital positive electrode
The controllable growth of alkene film 7.
It is covered with the interdigital positive electrode 8 of humidity sensitive medium 7, interdigital negative electrode 6 and the first air layer 9 constitute sensor
Horizontal humidity sensitive capacitance structure, after humidity sensitive 7 moisture absorption of medium, the dielectric constant meeting of the mixing dielectric layer of the capacitance structure
It changes, and then detection capacitance is caused to change, to realize what lateral humidity sensitive capacitance changed ambient humidity
Detection function.The interdigital positive electrode 8 and polysilicon electrode 4 for being covered with humidity sensitive medium 7 constitute Vertical Temperature sensitization capacitance structure,
When the temperature varies, due to having off-plane movement after the thermal expansion of 11 thermal deformation of anchoring area and grade binding beam 13, cause vertical
The interdigital negative electrode 6 in direction and the spacing of polysilicon electrode 4 increase, and then realize between interdigital negative electrode 6 and polysilicon electrode 4
Detection of the longitudinal temperature sensitization capacitance to the variation of environment temperature, the influence to compensation temperature for humidity measurement result.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of Low Drift Temperature capacitance type humidity sensor, it is characterised in that: including substrate (1), be disposed with insulation on substrate
Layer (2) and the first passivation layer (3) is provided with polysilicon electrode (4) on the first passivation layer (3), is arranged above polysilicon electrode (4)
There are interdigital negative electrode (6) and interdigital positive electrode (8), interdigital positive electrode (8) surface is covered with one layer of humidity sensitive medium (7)；It is interdigital
Negative electrode (6) and interdigital positive electrode (8) form interdigital structure, there is the first sky between interdigital negative electrode (6) and interdigital positive electrode (8)
Gas-bearing formation (9) constitutes horizontal capacitor；The polysilicon electrode (4) includes the first polysilicon electricity below interdigital negative electrode (6)
Pole (4-1) and the second polysilicon electrode (4-2) being located at below interdigital positive electrode (8), interdigital positive electrode (8) and the below
Two polysilicon electrodes (4-2) are directly connected to, and are arranged between interdigital negative electrode (6) and the first polysilicon electrode (4-1) below
Have the second air layer (10), and is covered with the second passivation layer (5) on the first polysilicon electrode (4-1), interdigital negative electrode (6) and first
Polysilicon electrode (4-1) constitutes vertical capacitor.
2. Low Drift Temperature capacitance type humidity sensor according to claim 1, it is characterised in that: the horizontal capacitor and vertical
Capacitor is two groups, and connects by movable beam (14) that movable beam (14) is connect with the interdigital negative electrode (6) of two groups of capacitors respectively.
3. Low Drift Temperature capacitance type humidity sensor according to claim 2, it is characterised in that: it further include a grade binding beam (13),
Grade binding beam (13) is connect with movable beam (14), and grade binding beam (13) is " H " shape, and four ends pass through anchoring area (11) and substrate
(1) fixed.
4. Low Drift Temperature capacitance type humidity sensor according to claim 3, it is characterised in that: have on the substrate (1)
Groove, grade binding beam (13) are placed in the groove of substrate (1), and are provided with third air layer between grade binding beam (13) and groove
(12)。
5. double-capacitance Temperature Humidity Sensor according to claim 1, it is characterised in that: the material of the substrate (1) is
Silicon.
6. Low Drift Temperature capacitance type humidity sensor according to claim 1, it is characterised in that: the interdigital negative electrode (6)
Material with interdigital positive electrode (8) is nickel.
7. Low Drift Temperature capacitance type humidity sensor according to claim 1, it is characterised in that: the humidity sensitive medium
(7) material is graphene oxide.
8. Low Drift Temperature capacitance type humidity sensor according to claim 1, it is characterised in that: first passivation layer (3),
The material of second passivation layer (5) is silicon nitride.
9. Low Drift Temperature capacitance type humidity sensor according to claim 1, it is characterised in that: the material of the insulating layer (2)
Matter is silica.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910352643.5A CN110108763A (en) | 2019-04-29 | 2019-04-29 | A kind of Low Drift Temperature capacitance type humidity sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111579603A (en) * | 2020-05-09 | 2020-08-25 | 北京航空航天大学 | Silicon-based capacitive humidity sensor integrating heating control and ultrasonic vibration |
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