CN204675826U - MEMS pressure sensor, MEMS inertial sensor integrated morphology - Google Patents
MEMS pressure sensor, MEMS inertial sensor integrated morphology Download PDFInfo
- Publication number
- CN204675826U CN204675826U CN201520362319.9U CN201520362319U CN204675826U CN 204675826 U CN204675826 U CN 204675826U CN 201520362319 U CN201520362319 U CN 201520362319U CN 204675826 U CN204675826 U CN 204675826U
- Authority
- CN
- China
- Prior art keywords
- top electrode
- support portion
- bottom electrode
- electrode
- integrated morphology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The utility model discloses a kind of MEMS pressure sensor, MEMS inertial sensor integrated morphology, comprise the insulating barrier be formed on substrate, be formed at the first bottom electrode on insulating barrier and the second bottom electrode, comprise the first top electrode forming air pressure responsive type capacitor with the first bottom electrode, and form the second top electrode of reference capacitor with the second bottom electrode; Comprise the inertia sensitive structure being supported on types of flexure by the 3rd support sector, and form the fixed polar plate of inertia sensing capacitor of inertial sensor with inertia sensitive structure; Wherein also comprise lid, the inertia sensing capacitor that inertia sensitive structure, fixed polar plate are formed is encapsulated on substrate by lid.Integrated morphology of the present utility model, by MEMS inertial sensor and MEMS pressure sensor on the same substrate integrated, the area of chip can be effectively reduced, thus reduce the cost of chip; By once encapsulating, the encapsulation of whole chip can be completed, reducing the cost of chip package.
Description
Technical field
The utility model relates to sensor field, more specifically, relates to a kind of by MEMS pressure sensor, the integrated integrated morphology on the same chip of MEMS inertial sensor.
Background technology
In recent years, along with the development of science and technology, the volume of the electronic product such as mobile phone, notebook computer is in continuous reduction, and the performance requirement of people to these portable electronic products is also more and more higher, and this just requires that the volume of electronic component supporting with it also must reduce thereupon.
Sensor, as measuring element, has generally been applied on the electronic product such as mobile phone, notebook computer.In existing process structure; because the principle detected is different; MEMS inertial sensor and MEMS pressure sensor chip are generally discrete; MEMS inertial sensor needs airtight space to protect its fine structure; and the sensitive structure of MEMS pressure sensor needs and extraneous contact; two kinds of devices design based on different technique platforms carries out and process respectively, recycle different packing forms, form independently chip.When assembling, MEMS inertial sensor chip and MEMS pressure sensor chip by the mode of SMT, are mounted on same mainboard, thus add the cost of chip, too increase the cost of encapsulation by system manufacturer.
Utility model content
An object of the present utility model is to provide the new solution of a kind of MEMS pressure sensor, MEMS inertial sensor integrated morphology.
According to first aspect of the present utility model, provide a kind of MEMS pressure sensor, MEMS inertial sensor integrated morphology, comprise substrate, the insulating barrier be formed on described substrate, be all formed at the first bottom electrode on described insulating barrier and the second bottom electrode, also comprise and be supported on the first top electrode above described first bottom electrode by the first support portion, and be supported on the second top electrode above described second bottom electrode by the second support portion; Described first powers on very pressure sensitive film, and the cavity between described first top electrode and described first bottom electrode is airtight cavity, with the air pressure responsive type capacitor making described first top electrode and described first bottom electrode be formed pressure sensor; Described second top electrode and described second bottom electrode form capacitance not with the reference capacitor that ambient pressure changes; Also comprise the inertia sensitive structure being supported on types of flexure by the 3rd support sector, and form the fixed polar plate of inertia sensing capacitor of inertial sensor with inertia sensitive structure; Wherein also comprise lid, the inertia sensing capacitor that inertia sensitive structure, fixed polar plate are formed is encapsulated on substrate by described lid.
Preferably, described second top electrode is also pressure sensitive film, and described reference capacitor also comprises the position limiting structure deformed under extraneous gas pressure for limiting described second top electrode.
Preferably, described reference capacitor is provided with the support column for supporting described second top electrode, to form described position limiting structure.
Preferably, described reference capacitor is provided with pressure compensation opening, and the cavity in described reference capacitor between the second top electrode with the second bottom electrode is communicated with the external world by described pressure compensation opening, to form described position limiting structure.
Preferably, the reference capacitor that the second top electrode, the second bottom electrode are formed also is encapsulated on substrate by described lid.
Preferably, described first top electrode and described second top electrode are structure as a whole.
Preferably, described first support portion, the second support portion, the 3rd support portion have identical material, identical height; Described first top electrode, the second top electrode, inertia sensitive structure have identical material, identical height; Described first bottom electrode, the second bottom electrode have identical material, identical height.
Preferably, the lower surface of described first top electrode, the second top electrode is higher than the lower surface of inertia sensitive structure.
Preferably, described first support portion, the second support portion, the 3rd support portion are respectively arranged with through hole, the conductive material be electrically connected with the first top electrode, the second top electrode, inertia sensitive structure is respectively equipped with in described through hole, and in the first support portion, the second support portion, the 3rd support portion lower end form multiple corresponding connecting lead wire, the plurality of corresponding connecting lead wire by insulating barrier cabling, and is connected to the pad concentration zones on substrate respectively.
Preferably, described fixed polar plate is arranged on the insulating layer, and as the 3rd bottom electrode of inertia sensing capacitor.
Integrated morphology of the present utility model, by MEMS inertial sensor and MEMS pressure sensor on the same substrate integrated, the area of chip can be effectively reduced, thus reduce the cost of chip; By once encapsulating, the encapsulation of whole chip can be completed, reducing the cost of chip package.And due to air pressure responsive type capacitor identical with the applied environment residing for reference capacitor, therefore, it is possible to common mode disturbances produces basically identical response to external world, like this, the output signal utilizing reference capacitor just can common mode interference signal in the output signal of filtering air pressure responsive type capacitor at least in part, and then improves the stability of air pressure responsive type capacitor output signal.
Inventor of the present utility model finds, in the prior art, MEMS inertial sensor chip and MEMS pressure sensor chip by the mode of SMT, are mounted on same mainboard, thus add the cost of chip, too increase the cost of encapsulation by system manufacturer.Therefore, the technical assignment that the utility model will realize or technical problem to be solved are that those skilled in the art never expect or do not anticipate, therefore the utility model is a kind of new technical scheme.
By referring to the detailed description of accompanying drawing to exemplary embodiment of the present utility model, further feature of the present utility model and advantage thereof will become clear.
Accompanying drawing explanation
In the description combined and the accompanying drawing forming a part for description shows embodiment of the present utility model, and illustrate that one is used from and explains principle of the present utility model together with it.
Fig. 1 is the structural representation of the utility model integrated morphology.
Fig. 2 is the structural representation of the utility model integrated morphology the second embodiment.
Fig. 3 is the structural representation of the third embodiment of the utility model integrated morphology.
Fig. 4 is the structural representation of the utility model integrated morphology the 4th kind of embodiment.
Detailed description of the invention
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit scope of the present utility model.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the utility model and application or use.
May not discuss in detail for the known technology of person of ordinary skill in the relevant, method and apparatus, but in the appropriate case, described technology, method and apparatus should be regarded as a part for description.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
With reference to figure 1, Fig. 2, the utility model provides a kind of MEMS pressure sensor, MEMS inertial sensor integrated morphology, it comprises substrate 1, the insulating barrier 2 be formed on substrate 1, be all formed at the first bottom electrode 3a on insulating barrier 2 and the second bottom electrode 3b, also comprise and be supported on the first top electrode 4a above the first bottom electrode 3a by the first support portion 7a, and be supported on the second top electrode 4b above the second bottom electrode 3b by the second support portion 7b; This first top electrode 4a is pressure sensitive film, and the cavity between the first top electrode 4a and the first bottom electrode 3a is airtight cavity 9a, with the air pressure responsive type capacitor making the first top electrode 4a and the first bottom electrode 3a constitute pressure sensor.At this, in order to eliminate the impact of variations in temperature on air pressure responsive type capacitor accuracy of detection, and for the ease of obtaining absolute pressure, this airtight cavity 9a is preferably vacuum cavity.And the second top electrode 4b and the second bottom electrode 3b forms capacitance not with the reference capacitor that ambient pressure changes.
Integrated morphology of the present utility model, also comprises and is supported on inertia sensitive structure 4c above substrate 1 by the 3rd support sector 7c, and form the fixed polar plate of inertia sensing capacitor with inertia sensitive structure 4c.Wherein, the inertia sensitive structure 4c of MEMS inertial sensor for a person skilled in the art, belongs to existing technology, and it has symmetrical movable plate, is connected on the 3rd support sector 7c by elastic beam structure.Wherein, in the embodiment that the utility model one is concrete, described fixed polar plate is arranged on insulating barrier 2, and it is positioned at the below of inertia sensitive structure 4c, as the 3rd bottom electrode 3c of inertia sensing capacitor, thus make this MEMS inertial sensor can carry out the detection of Z-direction.Certainly for a person skilled in the art, the pole plate that to be relatively fixed with inertia sensitive structure 4c side also can be set, itself and inertia sensitive structure 4c can be formed carry out X-axis, inertia sensing capacitor that Y direction detects.MEMS inertial sensor of the present utility model can be the inertial sensors such as mems accelerometer, MEMS gyro instrument and MEMS resonator.
In the utility model, the effect of insulating barrier 2 is the insulation in order to ensure between each parts and substrate 1, for a person skilled in the art, if substrate 1 itself can adopt the material of insulation to make, then no longer needs to arrange insulating barrier 2.
Integrated morphology of the present utility model, also comprises lid 8, and the inertia sensing capacitor that inertia sensitive structure 4c, fixed polar plate are formed encapsulates on substrate 1, with reference to figure 2, Fig. 3 by described lid 8.Wherein this lid 8 can be set directly on the insulating barrier 2 that is positioned at above substrate 1, certainly, in order to ensure the uniformity of technique, can the 4th support portion 7d be set on insulating barrier 2, described lid 8 and the 4th support portion 7d link together, and jointly surround the cavity of encapsulation inertia sensing capacitor.In integrated morphology of the present utility model, the first top electrode 4a in air pressure responsive type capacitor needs to contact competence exertion effect with external environment, second top electrode 4b of reference capacitor does not then need to contact with external environment, therefore, the reference capacitor that second top electrode 4b, the second bottom electrode 3b are formed can also encapsulate on substrate 1, with reference to figure 1, Fig. 4 by lid 8 of the present utility model.
Integrated morphology of the present utility model, by MEMS inertial sensor and MEMS pressure sensor on the same substrate integrated, the area of chip can be effectively reduced, thus reduce the cost of chip; By a packaging technology, the encapsulation of whole chip can be completed, thus reduce the cost of chip package.And due to air pressure responsive type capacitor identical with the applied environment residing for reference capacitor, therefore, it is possible to common mode interference signal produces basically identical response to external world, like this, the output signal utilizing reference capacitor just can common mode interference signal at least in part in filtering air pressure responsive type capacitor output signal, and then improves the stability of air pressure responsive type capacitor output signal.
In the utility model, in order to above-mentioned air pressure responsive type capacitor and reference capacitor can be formed by substantially identical processing step manufacture, and improve the response uniformity of air pressure responsive type capacitor and reference capacitor common mode disturbances to external world, this second top electrode 4b also can adopt pressure sensitive film, at this, first top electrode 4a and the second top electrode 4b can be separate, also can be structure as a whole (namely the first top electrode 4a and the second top electrode 4b is a pressure sensitive film), with reference to figure 3.Now, follow ambient pressure change in order to avoid the second top electrode 4b and occur correspondingly to be out of shape, this reference capacitor also should comprise the position limiting structure deformed under extraneous gas pressure for limiting the second top electrode 4b.In addition, this second top electrode 4b also can adopt the material that can not deform in the detection range of the utility model pressure sensor to make, and this material preferably makes the second top electrode 4b and the first top electrode 4a for the response difference of the change of the non-barometric factor such as temperature within the scope of the allowable error of pressure sensor.
In the embodiment that the utility model one is concrete, as shown in Fig. 1, Fig. 3, Fig. 4, above-mentioned position limiting structure is as follows: for reference capacitor arranges pressure compensation opening 12, cavity 9b in reference capacitor between the second top electrode 4b with the second bottom electrode 3b is communicated with the external world by pressure compensation opening 12, like this, identical change will be there is in the air pressure in cavity 9b according to ambient pressure, realize limiting by pressure compensation opening 12 object that second top electrode 4b deforms under extraneous gas pressure, obtain the effect of the invariant position of maintenance second top electrode 4b each point.At this, this pressure compensation opening 12 can be arranged on the second top electrode 4b, to simplify the manufacturing process of pressure sensor.If certainly passable, this pressure compensation opening 12 can be arranged on the second support portion 7b, can realize the object of air pressure equalisation equally.
In another concrete embodiment of the utility model, as shown in Figure 2, above-mentioned position limiting structure also can be as follows: arrange support column 13, thus be that the second top electrode 4b provides support, this support column 13 can be arranged on the second bottom electrode 3b, but because this support column 13 needs to adopt insulating materials, in order to improve the bonding strength of support column 13, this support column 13 also can be arranged on insulating barrier 2, this just needs on the second bottom electrode 3b, arrange the through hole passed for support column 13, extends upwardly to the position of the second top electrode 4b to make support column 13 through corresponding through hole.
Integrated morphology of the present utility model, for the ease of manufacturing, described first support portion 7a, the second support portion 7b, the 3rd support portion 7c, the 4th support portion 7d have identical material, identical height, such as, can adopt earth silicon material; Described first top electrode 4a, the second top electrode 4b, inertia sensitive structure 4c have identical material, identical height, such as, can adopt single crystal silicon material; Described first bottom electrode 3a, the second bottom electrode 3b, the 3rd bottom electrode 3c have identical material, identical height, such as, adopt metal material.This allows to be arranged by the mode of layer by layer deposition or bonding with regard to making above-mentioned each layer, and forms respective structure by patterning process, and the technique of the manufacturing process of MEMS inertial sensor and MEMS pressure sensor can be made thus completely compatible.What is more important, by identical material, technique, size, air pressure responsive type capacitor can be made to have substantially identical initial capacitance with reference capacitor, thus the response of air pressure responsive type capacitor and reference capacitor common mode disturbances to external world can be made basically identical, with the common mode interference signal in farthest filtering air pressure responsive type capacitor output signal, and eliminate the impact of reference capacitor output signal on useful signal in air pressure responsive type capacitor output signal.
Based on the uniformity of above-mentioned manufacturing process, the utility model one preferred embodiment in, in order to improve the sensitivity of air pressure responsive type capacitor, simultaneously in order to ensure the uniformity of air pressure responsive type capacitor and reference capacitor, make the lower surface of lower surface higher than inertia sensitive structure 4c of described first top electrode 4a, the second top electrode 4b.Particularly, by realizing thinning for the lower surface of the first top electrode 4a, the second top electrode 4b etching, thus, increase the volume of airtight cavity 9a, cavity 9b, ensureing air pressure responsive type capacitor and reference capacitor is conforming while, improve the sensitivity of air pressure responsive type capacitor; Simultaneously, by thinning for the lower surface of the first top electrode 4a, increase the distance between the first top electrode 4a to the first bottom electrode 3a, when can prevent high pressure from inputting, first top electrode 4a and the first bottom electrode 3a sticks together, to cause the inefficacy of air pressure responsive type capacitor.
In the utility model, the signal of each electrode is needed to draw, this realizes by traditional lead-in wire, the one provided at the utility model preferred embodiment in, with reference to figure 1, described first support portion 7a, second support portion 7b, 3rd support portion 7c is respectively arranged with through hole, be respectively equipped with in described through hole and the first top electrode 4a, second top electrode 4b, the conductive material 6 that inertia sensitive structure 4c is electrically connected, thus the signal of the electrode being positioned at top can be guided to lower end, and at the first support portion 7a, second support portion 7b, the lower end of the 3rd support portion 7c forms multiple corresponding connecting lead wire 5, the plurality of corresponding connecting lead wire 5 carries out cabling together with the lead-in wire of each bottom electrode by insulating barrier 2, and be connected to respectively in the pad concentration zones 10 on substrate 1.Such as can arrange the structure that insulating barrier 2 has multilayer, to make multiple connecting lead wire 5 mutually stagger, the mode of this cabling belongs to the common practise of those skilled in the art, no longer illustrates at this.
The utility model additionally provides a kind of manufacture method of above-mentioned integrated morphology, first on substrate 1 depositing insulating layer 2, and wherein, substrate 1 can adopt single crystal silicon material, and insulating barrier 2 can adopt earth silicon material; Secondly, at the upper surface depositing metal layers of insulating barrier 2, and this metal level is etched, form pad concentration zones 10, first bottom electrode 3a, the second bottom electrode 3b, the 3rd bottom electrode 3c; Deposit another insulating barrier afterwards, and etch formation first support portion 7a, the second support portion 7b, the 3rd support portion 7c, the 4th support portion 7d; Responsive rete is bonded on each support portion by the mode of bonding, this responsive rete is etched, form the first top electrode 4a, the second top electrode 4b and inertia sensitive structure 4c.Certainly as required, can before the responsive rete of etching, first on the first support portion 7a, the second support portion 7b, the 3rd support portion 7c, through hole is etched, after the responsive rete of bonding, the responsive rete of through hole position is etched away, filled conductive material 6, the signal of telecommunication of the first top electrode 4a, the second top electrode 4b, inertia sensitive structure 4c is guided to lower end, and carries out cabling by insulating barrier; In follow-up technique, another metal level can be deposited at the upper surface of responsive rete, and etching forms the conductive welding disk be positioned at above conductive material 6 and the metal bonding layer 11 be positioned at above the 4th support portion 7d, finally, lid 8 can be bonded on the 4th support portion 7d by this metal bonding layer 11.Wherein, in order to ensure the uniformity of physical dimension, when etching responsive rete, the responsive rete above the 4th support portion 7d can be retained, and be bonded together with lid 8 by follow-up metal bonding layer 11.
It should be noted that, above-mentioned insulating barrier 2 can be one, also can be the multiple separate insulating sublayer layer comprising corresponding air pressure responsive type capacitor, reference capacitor, inertia sensing capacitor respectively; Above-mentioned first support portion 7a, the second support portion 7b, the 3rd support portion 7c, the 4th support portion 7d adopt insulating materials, can be separate between them, also can be structure as a whole.
Although be described in detail specific embodiments more of the present utility model by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit scope of the present utility model.It should be appreciated by those skilled in the art, when not departing from scope and spirit of the present utility model, above embodiment can be modified.Scope of the present utility model is limited by claims.
Claims (10)
1. a MEMS pressure sensor, MEMS inertial sensor integrated morphology, it is characterized in that: comprise substrate (1), the insulating barrier (2) be formed on described substrate (1), be all formed at the first bottom electrode (3a) on described insulating barrier (2) and the second bottom electrode (3b), also comprise the first top electrode (4a) being supported on described first bottom electrode (3a) top by the first support portion (7a), and be supported on second top electrode (4b) of described second bottom electrode (3b) top by the second support portion (7b); Described first top electrode (4a) is pressure sensitive film, and the cavity between described first top electrode (4a) and described first bottom electrode (3a) is airtight cavity (9a), with the air pressure responsive type capacitor making described first top electrode (4a) and described first bottom electrode (3a) be formed pressure sensor; Described second top electrode (4b) and described second bottom electrode (3b) form capacitance not with the reference capacitor that ambient pressure changes; Also comprise the inertia sensitive structure (4c) being supported on substrate (1) top by the 3rd support sector (7c), and form the fixed polar plate of inertia sensing capacitor of inertial sensor with inertia sensitive structure (4c); Wherein also comprise lid (8), the inertia sensing capacitor that inertia sensitive structure (4c), fixed polar plate are formed is encapsulated on substrate (1) by described lid (8).
2. integrated morphology according to claim 1, it is characterized in that, described second top electrode (4b) is also pressure sensitive film, and described reference capacitor also comprises the position limiting structure deformed under extraneous gas pressure for limiting described second top electrode (4b).
3. integrated morphology according to claim 2, is characterized in that, described reference capacitor is provided with the support column (13) for supporting described second top electrode (4b), to form described position limiting structure.
4. integrated morphology according to claim 2, it is characterized in that, described reference capacitor is provided with pressure compensation opening (12), the cavity (9b) be positioned in described reference capacitor between the second top electrode (4b) with the second bottom electrode (3b) is communicated with the external world by described pressure compensation opening (12), to form described position limiting structure.
5. integrated morphology according to claim 1, is characterized in that: the reference capacitor that the second top electrode (4b), the second bottom electrode (3b) are formed also is encapsulated on substrate (1) by described lid (8).
6. integrated morphology according to claim 1, is characterized in that, described first top electrode (4a) and described second top electrode (4b) are structure as a whole.
7. integrated morphology according to claim 1, is characterized in that, described first support portion (7a), the second support portion (7b), the 3rd support portion (7c) have identical material, identical height; Described first top electrode (4a), the second top electrode (4b), inertia sensitive structure (4c) have identical material, identical height; Described first bottom electrode (3a), the second bottom electrode (3b) have identical material, identical height.
8. integrated morphology according to claim 7, is characterized in that: the lower surface of described first top electrode (4a), the second top electrode (4b) is higher than the lower surface of inertia sensitive structure (4c).
9. integrated morphology according to claim 1, it is characterized in that: described first support portion (7a), second support portion (7b), 3rd support portion (7c) is respectively arranged with through hole, be respectively equipped with in described through hole and the first top electrode (4a), second top electrode (4b), the conductive material (6) that inertia sensitive structure (4c) is electrically connected, and at the first support portion (7a), second support portion (7b), the lower end of the 3rd support portion (7c) forms multiple corresponding connecting lead wire (5), the plurality of corresponding connecting lead wire (5) is by insulating barrier (2) cabling, and the pad concentration zones (10) be connected to respectively on substrate (1).
10. integrated morphology according to claim 1, is characterized in that: described fixed polar plate is arranged on insulating barrier (2), and as the 3rd bottom electrode (3c) of inertia sensing capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520362319.9U CN204675826U (en) | 2015-05-29 | 2015-05-29 | MEMS pressure sensor, MEMS inertial sensor integrated morphology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520362319.9U CN204675826U (en) | 2015-05-29 | 2015-05-29 | MEMS pressure sensor, MEMS inertial sensor integrated morphology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204675826U true CN204675826U (en) | 2015-09-30 |
Family
ID=54175533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520362319.9U Withdrawn - After Issue CN204675826U (en) | 2015-05-29 | 2015-05-29 | MEMS pressure sensor, MEMS inertial sensor integrated morphology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204675826U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104891418A (en) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-Electro-Mechanical System) pressure sensor-MEMS inertial sensor integrated structure |
| WO2016192361A1 (en) * | 2015-05-29 | 2016-12-08 | 歌尔声学股份有限公司 | Quasi differential capacitive mems pressure sensor and manufacturing method thereof |
| CN107032289A (en) * | 2015-10-22 | 2017-08-11 | 飞思卡尔半导体公司 | MEMS sensor device with integrated multiple stimulation sensing functions |
-
2015
- 2015-05-29 CN CN201520362319.9U patent/CN204675826U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104891418A (en) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-Electro-Mechanical System) pressure sensor-MEMS inertial sensor integrated structure |
| CN104891418B (en) * | 2015-05-29 | 2016-09-21 | 歌尔股份有限公司 | MEMS pressure sensor, MEMS inertial sensor integrated morphology |
| WO2016192361A1 (en) * | 2015-05-29 | 2016-12-08 | 歌尔声学股份有限公司 | Quasi differential capacitive mems pressure sensor and manufacturing method thereof |
| WO2016192372A1 (en) * | 2015-05-29 | 2016-12-08 | 歌尔声学股份有限公司 | Mems pressure sensor and mems inertial sensor integration structure |
| US10407300B2 (en) | 2015-05-29 | 2019-09-10 | Goertek.Inc | Integrated structure of mems pressure sensor and mems inertia sensor |
| CN107032289A (en) * | 2015-10-22 | 2017-08-11 | 飞思卡尔半导体公司 | MEMS sensor device with integrated multiple stimulation sensing functions |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104891418A (en) | MEMS (Micro-Electro-Mechanical System) pressure sensor-MEMS inertial sensor integrated structure | |
| CN104848982B (en) | Quasi- differential capacitance type MEMS pressure sensor and its manufacture method | |
| CN105307092A (en) | MEMS microphone and environmental sensor integrated structure and integrated manufacturing method | |
| US9663350B2 (en) | Stress isolated differential pressure sensor | |
| US10551263B2 (en) | MEMS pressure sensing element | |
| CN106535071B (en) | Integrated device of MEMS microphone and environmental sensor and manufacturing method thereof | |
| CN205090976U (en) | Micro electronmechanical detection structure, little electromechanical sensor and electron device | |
| CN105181186A (en) | Pressure sensing element and manufacturing method thereof | |
| CN204675826U (en) | MEMS pressure sensor, MEMS inertial sensor integrated morphology | |
| CN204881958U (en) | Accurate difference capacitanc MEMS pressure sensor | |
| CN205179361U (en) | MEMS microphone, environmental sensor's integrated morphology | |
| CN105067178A (en) | Differential-capacitive MEMS pressure sensor and manufacturing method thereof | |
| CN105043439A (en) | Sensor integration device and production method thereof | |
| CN105115540A (en) | MEMS inertia sensor and humidity sensor integration device and manufacturing method therefor | |
| CN104819730B (en) | A kind of MEMS inertial sensor and its manufacture method | |
| CN207649640U (en) | A kind of encapsulating structure of inertial sensor, environmental sensor | |
| CN104198763B (en) | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer | |
| CN103063350A (en) | Micro-electromechanical system (MEMS) pressure sensor array, manufacturing method of the same, and pressure measuring method | |
| CN204881934U (en) | Pressure sensing component | |
| CN205981240U (en) | Environmental sensor | |
| CN105371878A (en) | Environment sensor and manufacturing method thereof | |
| CN217180964U (en) | Micro-electromechanical sensor device and electronic system | |
| CN204758028U (en) | MEMS inertial sensor , humidity transducer integrated device | |
| CN205175427U (en) | Environmental sensor | |
| CN206302569U (en) | The integrating device of MEMS microphone and environmental sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150930 Effective date of abandoning: 20160921 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |