CN104198763B - TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer - Google Patents
TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer Download PDFInfo
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- CN104198763B CN104198763B CN201410475924.7A CN201410475924A CN104198763B CN 104198763 B CN104198763 B CN 104198763B CN 201410475924 A CN201410475924 A CN 201410475924A CN 104198763 B CN104198763 B CN 104198763B
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Abstract
The invention discloses a TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer. The accelerator is composed of an X-axis structure, a Y-axis structure and a Z-axis structure; the three structures independent of one another are hermetically arranged within a same sealed cavity; the three structures are all fixed on a central TSV; electrical signals of moving weights of the three structures are connected together through an MEMS central anchor point and are led out of the sealed cavity through the central TSV; a fixed electrode of the X-axis structure and that of the Y-axis structure are electrically isolated from the moving weight X and the moving weight Y through isolators, respectively; the sides of the moving electrodes and the sides of the fixed electrodes are used as induction capacitors for the X-axis structure and the Y-axis structure; one moving weights and a Z-axis fixed electrode are used as induction capacitors for the Z-axis structure. The X-axis structure, the Y-axis structure and the Z-axis structure are fixed on the same central TSV, mechanical stress caused by temperature changes in using the accelerometer is small, and the accelerometer is good in performance, low in cost and high in market competitiveness.
Description
Technical field
The invention belongs to MEMS chip design field, the 3 axis MEMS being specifically related to a kind of TSV wafer level packaging accelerates
Degree meter.
Background technology
MEMS(Micro-Electro-Mechanical Systems) it is the abbreviation of MEMS, MEMS manufacturing technology
Utilize Micrometer-Nanometer Processing Technology, particularly semiconductor wafer manufacturing technology, produce various MIniature machinery structure, in conjunction with special control
Integrated circuit (ASIC), forms the MEMS components and parts such as intelligentized microsensor, microactrator, micro-optical device.MEMS unit device
Part has that volume is little, low cost, reliability high, anti-adverse environment ability is strong, low in energy consumption, intelligence degree is high, the most calibrated, easily collect
The advantage become, is widely used in the consumer electronics product with smart mobile phone as representative.As a example by smart mobile phone, it is used
The MEMS components and parts such as gyroscope, accelerometer, altimeter, mike, digital compass, tuned antenna, wave filter.And MEMS
Accelerometer is again the most most widely used, and each smart mobile phone, even functional mobile phone all standard configurations have mems accelerometer.With
The competition MEMS components and parts market is more and more fierce, and the significantly one-tenth of the wearable electronic product with intelligent watch as representative
Long, MEMS components and parts are required more and more higher by client, and volume is little, low in energy consumption, stable performance has become basic demand.For further
Reduce the volume of MEMS chip, reduce cost, TSV(Through Silicon Via, silicon through hole) the MEMS core of wafer level packaging
Sheet becomes inexorable trend.
Mobilizable MEMS structure is clipped in the middle by TSV wafer level packaging exactly with two cover plates, and two cover plates make
Having cavity, form an annular seal space the most movable for MEMS structure, it is cover plate that one of which cover plate has some TSV, TSV
A part, but have sealing coat electric insulation with other parts of cover plate.TSV one end in annular seal space is bonded in MEMS structure
Together, the other end connects metal, thus is drawn from annular seal space by the signal of MEMS structure.But owing to cover sheet thickness generally exists
More than 100 μm, and in view of the stress problem in bonding process, TSV cannot be made very small, and must also protect between TSV
Hold certain spacing, in traditional 3 axis MEMS accelerometer design, the movable mass of the MEMS structure of each axle, positive and negative
Induction electrode is separately fixed on three TSV, and TSV spacing is the biggest, and in use thermal expansion can produce gravitation, thus leads
Cause MEMS structure deforms upon, and spacing is the biggest, and deformation is the biggest, the performance of accelerometer, and particularly zero point value repeatability is the poorest,
This has become a big problem of current 3 axis MEMS accelerometer design.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, it is provided that the three of a kind of TSV wafer level packaging
Axle mems accelerometer, is fixed on X, Y, Z three-axis structure on same center TSV, thus avoid that thermal expansion causes should
Power problem, is greatly improved properties of product.
For solving above-mentioned technical problem, the invention provides the 3 axis MEMS accelerometer of a kind of TSV wafer level packaging, by
Be sealed in same annular seal space and separate X-axis structure, Y-axis structure and Z axis structure composition, X-axis structure, Y-axis structure and
Z axis structure is all fixed on the TSV of center, the X movable mass of X-axis structure, the Y movable mass of Y-axis structure and Z axis structure
The signal of telecommunication of Z movable mass is linked together by MEMS center anchor point, and is drawn in annular seal space by center TSV, X-axis
The fixed electrode of structure and Y-axis structure is electrically insulated with X movable mass, Y movable mass respectively by spacing block；X-axis structure
Movable mass and Z axis is utilized as inductance capacitance, Z axis structure with the side that Y-axis structure utilizes movable electrode and fixed electrode
Fixed electrode lays respectively at the both sides of MEMS center anchor point as inductance capacitance, X-axis structure and Y-axis structure, and Z axis structure is positioned at X
Axle construction and the outside of Y-axis structure.
Described X movable mass is fixed on X cantilever by X-axis spring, and and X cantilever between have spacing block to electrically insulate, X hang
Arm is fixed on the TSV of center by MEMS center anchor point, has spacing block to electrically insulate, X between X cantilever and MEMS center anchor point
Movable mass can move in X direction, and X movable mass makes X movable electrode, and X cantilever makes X fixed electrode, X
Movable electrode forms X-axis inductance capacitance with X fixed electrode, and its signal is drawn from annular seal space by corresponding X-axis TSV, X-axis TSV
Connected by X conductive arm with between corresponding X cantilever；
Described Y movable mass is fixed on Y cantilever by Y-axis spring, and and Y cantilever between have spacing block carry out electricity every
From, Y cantilever is fixed on the TSV of center by MEMS center anchor point, has spacing block to carry out electricity between Y cantilever and MEMS center anchor point
Isolation, Y movable mass is moveable in the y direction, and Y movable mass makes Y movable electrode, and Y cantilever makes has Y to fix
Electrode, Y movable electrode forms Y-axis inductance capacitance with Y fixed electrode, and its signal is drawn from annular seal space by corresponding Y-axis TSV, Y
Connected by Y conductive arm between axle TSV with corresponding Y cantilever；
Described Z axis structure is a seesaw plate structure, and Z movable mass is fixed on MEMS central anchor by Z axis spring
On point, the figure of two sides that Z movable mass is distributed in Z axis spring is asymmetric, and Z movable mass can be along Z axis spring pivotal, Z
Movable mass forms Z axis inductance capacitance with Z fixed electrode, and the TSV that Z fixed electrode inherently area is bigger, its signal can
Directly lead out.
Described X cantilever includes X+ cantilever and X-cantilever, has isolating trenches to electrically insulate between X+ cantilever and X-cantilever, on X+ cantilever
It is fixed with X+ fixed electrode, X-cantilever is fixed with X-fixed electrode.
Described Y cantilever includes Y+ cantilever and Y-cantilever, has isolating trenches to electrically insulate between Y+ cantilever and Y-cantilever, on Y+ cantilever
It is fixed with Y+ fixed electrode, Y-cantilever is fixed with Y-fixed electrode.
Described X-axis TSV includes that X+TSV and X-TSV, X cantilever includes X+ cantilever and X-cantilever, and X+TSV is fixed on X+MEMS
On anchor point, X-TSV is fixed on X-MEMS anchor point, is connected by X+ conductive arm between X+TSV with X+ cantilever, X-TSV Yu X-cantilever
Between connected by X-conductive arm.
Described Y-axis TSV includes that Y+TSV and Y-TSV, Y cantilever includes Y+ cantilever and Y-cantilever, and Y+TSV is fixed on Y+MEMS
On anchor point, Y-TSV is fixed on Y-MEMS anchor point, is connected by Y+ conductive arm between Y+TSV with Y+ cantilever, Y-TSV Yu Y-cantilever
Between connected by Y-conductive arm.
Problem maximum during using due to 3 axis MEMS accelerometer is zero drift, is generally drawn by mechanical stress
Rising, mechanical stress is delivered on MEMS substrate by solder and encapsulating material by pcb board, causes MEMS substrate deformation, and MEMS serves as a contrast
The deformation at the end causes again the deformation of MEMS structure, thus produces MEMS zero drift.The deformation of MEMS structure is tied with fixing MEMS
Distance between each TSV of structure is directly proportional.The 3 axis MEMS accelerometer of the TSV wafer level packaging of the present invention is by X, Y, Z tri-
The structure of axle is fixed on same center TSV, reduces MEMS structure and MEMS substrate contact area, product during using
The mechanical stress that variations in temperature causes is little on the impact of MEMS structure, good product performance, low cost, the market competitiveness are strong.
Accompanying drawing explanation
Fig. 1 is the structural representation of the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 2 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the structural representation of Y-axis structure.
Fig. 3 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the structural representation of X-axis structure.
Fig. 4 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the structural representation of Z axis structure.
Fig. 5 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the schematic diagram of Z axis fixed electrode.
Fig. 6 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the sectional view of Z inductance capacitance unit.
Fig. 7 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the top view of center TSV.
Fig. 8 be TSV wafer level packaging of the present invention 3 axis MEMS accelerometer in the sectional view of center TSV.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
The 3 axis MEMS accelerometer of TSV wafer level packaging, as it is shown in figure 1, set vertically upward as positive Y-direction, level to
The right side is positive X-direction, and paper is positive Z-direction the most dorsad；The 3 axis MEMS accelerometer of TSV wafer level packaging is by being fixed on center
Y-axis structure 10, X-axis structure 30 and Z axis structure 40 on TSV50 form, and entirety is rectangle, Y-axis structure 10, X-axis structure 30
Being positioned at inner side, Z axis structure 40 is positioned at outside.
Y-axis structure 10, as in figure 2 it is shown, MEMS center anchor point 55 is bonded on the TSV50 of center, carries for whole Y-axis structure 10
For mechanical support, Y+ the cantilever 13 and Y-cantilever 14 of Y-axis structure 10 passes through spacing block 17a and first by one end of center TSV50
Linking arm 52 connects, and the first linking arm 52 connects MEMS center anchor point 55, and so, Y+ cantilever 13 and Y-cantilever 14 is just fixed on
On MEMS center anchor point 55, described spacing block 17a provides only mechanical connection, does not provide electrical connection, so Y+ cantilever 13 and Y-hangs
Arm 14 does not electrically connect with MEMS center anchor point 55.Owing to Y+ cantilever 13 and Y-cantilever 14 size is relatively big, bandpass is in 10 μm
Above, so mechanical displacement will not occur when there being acceleration relative to MEMS center anchor point 55, it is connected with Y+ cantilever 13
Fixed electrode 13a and the fixed electrode 14a being connected with Y-cantilever 14 also will not occur machinery relative to MEMS center anchor point 55
Displacement；Y+ cantilever 13 and Y-cantilever 14 is isolated by isolating trenches 15, not electrical connection between them；Y+ cantilever 13 and Y-cantilever 14
The other end connects Y linking arm 18 by spacing block 17b, and spacing block 17b provides only mechanical connection, does not provide electrical connection, so Y is even
Connecing between arm 18 and Y+ cantilever 13 and Y-cantilever 14 is electric insulation.Y movable mass 12 is by Y-axis spring 11a and Y-axis spring
11b with Y linking arm 18 is connected, and is connected, due to Y-axis spring by Y-axis spring 11c and Y-axis spring 11d and MEMS center anchor point 55
11a, 11b, 11c, 11d and Y movable mass 12 and MEMS center anchor point 55 are in same MEMS layer, so Y movable mass
Electrically connect between 12 with MEMS center anchor point 55, but with Y+ cantilever 13, Y-cantilever 14 without electrically connecting.Y-axis spring 11a, 11b,
11c, 11d provide the ability along Y direction activity for Y movable mass 12, simultaneously suppression movable mass 12 along X-direction and
The activity of Z-direction.Y+ movable electrode 13b is produced on Y movable mass 12, and Y+ fixed electrode 13a is produced on Y+ cantilever 13
On, and vertical with Y+ cantilever 13；Y+ movable electrode 13b and Y+ fixed electrode 13a forms a Y+ inductance capacitance unit, and Y+ can
The parallel side that moving electrode 13b and Y+ fixed electrode 13a is formed constitutes the Y+ parallel electrode plate of inductance capacitance, parallel electrode plate
Space D1Usually 1/10 to the 1/30 of MEMS layer thickness.Y-movable electrode 14b is produced on Y movable mass 12, and Y-is solid
Fixed electrode 14a manufactures on Y-cantilever 14 and vertical with Y-cantilever 14；Y-movable electrode 14b and Y-fixed electrode 14a forms one
Individual Y-inductance capacitance unit, the parallel side that Y-movable electrode 14b and Y-fixed electrode 14a is formed constitutes the Y-of inductance capacitance
Parallel electrode plate, the spacing of parallel electrode plate is also D2.When there being Y-direction acceleration to be applied in Y-axis structure 10, Y+ can galvanic electricity
Pole 13b and Y-movable electrode 14b moves relative to MEMS center anchor point 55 along Y direction with Y movable mass 12, and Y+ is solid
Fixed electrode 13a and Y-fixed electrode 14a will not move relative to MEMS center anchor point 55, parallel-plate electrode space D1、D2Will phase
Should change, as a example by positive Y-axis acceleration, due to effect of inertia, Y+ movable electrode 13b, Y-movable electrode 14b is with the movable quality of Y
Block 12 moves to negative Y direction relative to MEMS center anchor point, the Y+ electrode between Y+ movable electrode 13b and Y+ fixed electrode 13a
Space D1It is reduced into (D1-δ), Y+ electric capacity becomes big；Meanwhile, between the Y-electrode between Y-movable electrode 14b and Y-fixed electrode 14a
Away from D2Become greatly (D2+ δ), Y-electric capacity diminishes；One Y-axis structure 10 has multiple Y+ capacitive sensing unit and Y-capacitive sensing
Unit, it is assumed that electrode spacing D1=D2=D, has n Y+ capacitive sensing unit and n Y-capacitive sensing unit, each parallel-plate electrode
Area be Sy, then the capacitive sensing signal of Y-axis structure 10 is:
,
The dielectric constant of gas medium during wherein ε is annular seal space, close to 1, ε0It is situated between for the vacuum of gas medium in annular seal space
Electric constant, due to D2Compare δ2Much bigger, more than the biggest 6 orders of magnitude, so denominator can be reduced to D2, the electric capacity of Y-axis structure 10
Induced signal just can be reduced to:
。
After Y+ capacitive sensing signal is sensed by Y+ fixed electrode 13a, it is transferred to by Y+ cantilever 13 and Y+ conductive arm 19a
On MEMS anchor point 20a, MEMS anchor point 20a is bonded on TSV22a, and such Y+ capacitive sensing signal is just derived close by TSV22a
Envelope chamber, described Y+ conductive arm 19a is formed by MEMS layer etching, the most soft, will not be by the stress transfer of TSV22a to Y+ cantilever
On 13, thus the signal quality of Y-axis structure 10 during ensure that use.Equally, Y-capacitive sensing signal is by Y-fixed electrode
After 14a sensing, being transferred on MEMS anchor point 20b by Y-cantilever 14 and Y-conductive arm 19b, MEMS anchor point 20b is bonded in
On TSV22b, such Y-capacitive sensing signal just derives annular seal space by TSV22b, and described Y-conductive arm 19b is etched by MEMS layer
Form, the most soft, will not be by the stress transfer of TSV22b to Y-cantilever 14.
Similar to Y-axis structure 10, X-axis structure 30 is also secured on MEMS center anchor point 55, X+ cantilever 33 and X-cantilever 34
One end by center TSV50 is connected by spacing block 17c and the second linking arm 53, and the second linking arm 53 connects MEMS center anchor point
55, so, X+ cantilever 33 and X-cantilever 34 is just fixed on MEMS center anchor point 55, and described spacing block 17c provides only machinery
Connect, do not provide electrical connection, so X+ cantilever 33 and X-cantilever 34 does not electrically connect with MEMS center anchor point 55.Due to X+ cantilever
33 and X-cantilever 34 sizes are sufficiently large, so mechanical displacement will not occur when there being acceleration relative to MEMS center anchor point 55,
The fixed electrode 33a being connected with Y+ the cantilever 33 and fixed electrode 34a being connected with X-cantilever 34 also will not be relative to MEMS
There is mechanical displacement in center anchor point 55；X+ cantilever 33 and X-cantilever 34 is isolated by isolating trenches 35, not electrical connection between them；X+
The other end of cantilever 33 and X-cantilever 34 connects an X linking arm 38 by spacing block 17d, and spacing block 17d provides only machinery even
Connect, electrical connection is not provided, so being electric insulation between an X linking arm 38 and X cantilever 33 and 34.X movable mass 32 passes through X
Axle spring 31a is connected with X-axis spring 31b and an X linking arm 38, is connected by X-axis spring 31c and X-axis spring 31d and the 2nd X
Connecing arm 36 to be connected, the 2nd X linking arm 36 is connected with MEMS center anchor point 55, owing to X-axis spring 31a, 31b, 31c, 31d and X can
Kinoplaszm gauge block the 32, the 2nd X linking arm 36 and MEMS center anchor point 55 manufactures in same MEMS layer, so X movable mass 32
Electrically connect with between MEMS center anchor point 55, but with X+ cantilever 33, X-cantilever 34 without electrically connecting.X-axis spring 31a, 31b, 31c,
31d provides the ability along X-direction activity for X movable mass 32, and suppression movable mass 32 is along Y-direction and Z-direction simultaneously
Activity.X+ movable electrode 33b is produced on X movable mass 32, and X+ fixed electrode 33a is produced on X+ cantilever 33, and and X
+ cantilever 33 is parallel vertical with Y+ fixed electrode 13a；X+ movable electrode 33b and X+ fixed electrode 33a forms an X+ faradism
Holding unit, the parallel side that X+ movable electrode 33b and X+ fixed electrode 33a is formed constitutes the X+ parallel pole of inductance capacitance
Plate, the spacing of parallel electrode plate is D3.X-movable electrode 34b is produced on X movable mass 32, and X-fixed electrode 34a manufactures
On X-cantilever 34 and parallel with X-cantilever 14；X-movable electrode 34b and X-fixed electrode 34a forms an X-inductance capacitance
Unit, the parallel side that X-movable electrode 34b and X-fixed electrode 34a is formed constitutes the X-parallel electrode plate of inductance capacitance,
The spacing of parallel electrode plate is D4.When there being X-direction acceleration to be applied in X-axis structure 30, X+ movable electrode 33b Yu X-can
Moving electrode 34b moves relative to MEMS center anchor point 55 along X-direction with X movable mass 32, and X+ fixed electrode
33a, X-fixed electrode 34a will not move relative to MEMS center anchor point 55, parallel-plate electrode space D3、D4Will respective change；
As a example by positive X-axis acceleration, due to effect of inertia, X+ movable electrode 33b, X-movable electrode 34b is relative with X movable mass 32
In MEMS center, anchor point moves to negative X-direction, X+ electrode spacing D between X+ movable electrode 33b and X+ fixed electrode 33a3Reduce
For (D3-δ), X+ electric capacity becomes big；Meanwhile, X-electrode spacing D between X-movable electrode 34b and X-fixed electrode 34a4It is increased to
(D4+ δ), X-electric capacity diminishes；Assume D3 = D4=D, has m X+ capacitive sensing unit and m X-electricity in an X-axis structure 30
Holding sensing unit, the area of each parallel-plate electrode is Sx, then the capacitive sensing signal of X-axis structure 30 is:
。
After X+ capacitive sensing signal is sensed by X+ fixed electrode 33a, it is transferred to by X+ cantilever 33 and X+ conductive arm 39a
On MEMS anchor point 20c, MEMS anchor point 20c is bonded on TSV22c, and such X+ signal just derives annular seal space by TSV22c, described
X+ conductive arm 39a is formed by MEMS layer etching, the most soft, will not by the stress transfer of TSV22c to X+ cantilever 33, thus
Ensure that the signal quality of X-axis structure 30 during use.Equally, after X-capacitive sensing signal is sensed by X-fixed electrode 34a,
Being transferred on MEMS anchor point 20d by X-cantilever 34 and X-conductive arm 39b, MEMS anchor point 20d is bonded on TSV22d, such X-
Signal just derives annular seal space by TSV22d, and described X-conductive arm 39b is formed by MEMS layer etching, the most soft, will not be by
The stress transfer of TSV22d is on X-cantilever 34.
Z axis structure 40 is a seesaw structure, and Z movable mass 42 is fixed on MEMS by Z axis spring 41a and 41b
On center anchor point 55, Z movable mass 42, Z axis spring 41a, Z axis spring 41b and MEMS center anchor point 55 are produced on same
In MEMS layer, it is electrically connected to each other between them, so the signal of Z movable mass 42 can be drawn by center TSV50, real
On border, X movable mass 12, the signal of Y movable mass 32 and Z movable mass 42 are to be connected in by MEMS center anchor point 55
Together.Z movable mass 42 is symmetrical along X-direction, is asymmetric along Y direction, and as shown in Figure 4, positive Y direction is Z
Movable mass 42 gently hold 42e, negative Y direction is the X-axis side of heavily end 42f, the Z movable mass 42 of Z movable mass 42
It is positioned at positive Y direction as Z movable electrode, Z-movable electrode 42a, 42c, near gently holding 42e to the part of both sides；Z+ is movable
Electrode 42b, 42d are positioned at negative Y direction, near heavily holding 42f.Z fixed electrode 43 is positioned at the lower section of Z movable mass 42, the most just
Being negative Z-direction, Z-fixed electrode 43a and Z-movable electrode 42a forms a Z inductance capacitance unit, equally, Z-fixed electrode
43c Yu Z-movable electrode 42c forms a Z inductance capacitance unit, and Z+ fixed electrode 43b and Z-movable electrode 42b forms a Z
Inductance capacitance unit, Z+ fixed electrode 43d and Z-movable electrode 42d form a Z inductance capacitance unit, have four the most right
The Z inductance capacitance unit claimed.
A Z fixed electrode 43 the most inherently TSV, as it is shown in figure 5, the isolation channel 51 in Z fixed electrode 43 is
Insulant, includes Z+ fixed electrode 43b, 43d and Z-fixed electrode 43a, 43c by Z fixed electrode 43() with other of TSV layer
Part electric isolution.As seen from Figure 6, TSV substrate 57 is divided into two parts by isolation channel 51, is wherein fenced up by isolation channel 51
Part is Z fixed electrode 43, and Z movable electrode and Z fixed electrode 43 form Z inductance capacitance unit, its parallel-plate electrode spacing
Being that the other end of H, Z fixed electrode 43 is coated with insulating barrier 58 when not having acceleration, metal level 54 is solid with Z by contact hole 59
Fixed electrode 43 is connected, and is drawn by signal.
When there being Z-direction acceleration to be applied in Z axis structure 40, Z+ movable electrode 42b, 42d and Z-movable electrode
42a, 42c rotate relative to MEMS center anchor point 55 with Z axis spring 41a, 41b for axle center with Z movable mass 42, and Z+
Fixed electrode 43b, 43d and Z-fixed electrode 43a, 43c will not rotate relative to MEMS center anchor point 55, inductance capacitance unit
Parallel-plate electrode spacing H will occur respective change；As a example by positive Z axis acceleration, due to effect of inertia, Z+ movable electrode 42b,
42d moves to negative Z-direction relative to MEMS center anchor point with Z movable mass 42, Z+ movable electrode 42b and Z+ fixed electrode
Electrode spacing H between 43b diminishes as (H-δ), and Z+ electric capacity becomes big；Meanwhile, between Z+ movable electrode 42d and Z+ fixed electrode 43d
Electrode spacing H also diminish as (H-δ)；Electrode spacing H between Z-movable electrode 42a and Z-fixed electrode 43a becomes greatly (H
+ δ), Z-electric capacity diminishes；Electrode spacing H between Z-movable electrode 42c and Z-fixed electrode 43c becomes greatly (H+δ)；Due to four
Individual Z inductance capacitance unit is all equal, if the area of each Z fixed electrode is Sz, then the capacitive sensing signal of Z axis structure 40
For:
。
Fig. 7 show the schematic diagram of center TSV50, and TSV substrate 57 is divided into two parts, is trapped among isolation channel by isolation channel 51
Part in 51 becomes TSV conductive pole 57a；MEMS center anchor point 55 is bonded on TSV conductive pole 57a, and the material of MEMS layer is
Heavily doped monocrystal silicon, thickness is about tens microns, is good electric conductor, and TSV substrate 57 is also heavily doped monocrystal silicon, thick
Degree is generally at tens microns to hundreds of micron, so the signal of telecommunication of MEMS center anchor point 55 can be drawn by TSV conductive pole 57a.
As seen from Figure 8, isolation channel 51 runs through TSV substrate 57, is separated out TSV conductive pole 57a；The TSV key etched on TSV substrate 57
Closing block 56 to be used for being bonded with MEMS center anchor point 55, meanwhile, the height of TSV bonding block 56 is also between the electrode of Z axis inductance capacitance
Away from H.The another side of TSV substrate 57 is coated with insulating barrier 58, and metal level 54 is connected with conductive pole 57a by contact hole 59, will letter
Number draw.
Claims (5)
- The 3 axis MEMS accelerometer of 1.TSV wafer level packaging, X-axis knot by being sealed in same annular seal space and separate Structure, Y-axis structure and Z axis structure composition, it is characterised in that: X-axis structure, Y-axis structure and Z axis structure are all fixed on the TSV of center, The Z movable mass of the X movable mass of X-axis structure, the Y movable mass of Y-axis structure and Z axis structure and MEMS center anchor point Between have electrical connection, its signal of telecommunication is drawn by center TSV in annular seal space, and the fixed electrode of X-axis structure and Y-axis structure passes through Spacing block electrically insulates with X movable mass, Y movable mass respectively；X-axis structure utilizes X+ movable electrode and X+ fixed electrode group Become X+ inductance capacitance unit, utilize X-movable electrode to form X-inductance capacitance unit with X-fixed electrode；Y-axis structure utilizes Y+ movable electrode and Y+ fixed electrode form Y+ inductance capacitance unit, utilize Y-movable electrode and the composition Y-sensing of Y-fixed electrode Capacitor cell；Z axis structure utilizes Z movable mass and Z fixed electrode to divide as Z axis inductance capacitance, X-axis structure and Y-axis structure Not being positioned at the both sides of MEMS center anchor point, Z axis structure is positioned at X-axis structure and the outside of Y-axis structure；Described X movable mass is fixed on X cantilever by X-axis spring, and and X cantilever between have spacing block to electrically insulate, X cantilever lead to Crossing MEMS center anchor point to be fixed on the TSV of center, have spacing block to electrically insulate between X cantilever and MEMS center anchor point, X is movable Mass can move in X direction, and X movable mass makes X+ movable electrode and X-movable electrode, and X cantilever makes X+ Fixed electrode and X-fixed electrode, its signal is drawn from annular seal space by corresponding X-axis TSV, between X-axis TSV with corresponding X cantilever Connected by X conductive arm；Described Y movable mass is fixed on Y cantilever by Y-axis spring, and and Y cantilever between have spacing block to electrically insulate, Y hang Arm is fixed on the TSV of center by MEMS center anchor point, has spacing block to electrically insulate, Y between Y cantilever and MEMS center anchor point Movable mass is moveable in the y direction, and Y movable mass makes Y+ movable electrode and Y-movable electrode, and Y cantilever makes Having Y+ fixed electrode and Y-fixed electrode, its signal is drawn from annular seal space by corresponding Y-axis TSV, and Y-axis TSV is hanged with corresponding Y Connected by Y conductive arm between arm；Described Z axis structure is a seesaw structure, and Z movable mass is fixed on the anchor point of MEMS center by Z axis spring, Z The figure of the both sides that movable mass is distributed in Z axis spring is asymmetric, and Z movable mass can be along Z axis spring pivotal, the fixing electricity of Z Pole signal can directly lead out.
- The 3 axis MEMS accelerometer of TSV wafer level packaging the most according to claim 1, it is characterised in that: described X hangs Arm includes X+ cantilever and X-cantilever, has isolating trenches to electrically insulate between X+ cantilever and X-cantilever, and X+ cantilever is fixed with X+ fixed electrode, X-fixed electrode it is fixed with on X-cantilever.
- The 3 axis MEMS accelerometer of TSV wafer level packaging the most according to claim 1, it is characterised in that: described Y hangs Arm includes Y+ cantilever and Y-cantilever, has isolating trenches to electrically insulate between Y+ cantilever and Y-cantilever, and Y+ cantilever is fixed with Y+ fixed electrode, Y-fixed electrode it is fixed with on Y-cantilever.
- The 3 axis MEMS accelerometer of TSV wafer level packaging the most according to claim 1 and 2, it is characterised in that: described X Axle TSV includes that X+TSV and X-TSV, X cantilever includes X+ cantilever and X-cantilever, and X+TSV is fixed on X+MEMS anchor point, and X-TSV is solid It is scheduled on X-MEMS anchor point, is connected by X+ conductive arm between X+TSV with X+ cantilever, by X-conductive arm between X-TSV and X-cantilever Connect.
- 5. according to the 3 axis MEMS accelerometer of the TSV wafer level packaging described in claim 1 or 3, it is characterised in that: described Y Axle TSV includes that Y+TSV and Y-TSV, Y cantilever includes Y+ cantilever and Y-cantilever, and Y+TSV is fixed on Y+MEMS anchor point, and Y-TSV is solid It is scheduled on Y-MEMS anchor point, is connected by Y+ conductive arm between Y+TSV with Y+ cantilever, by Y-conductive arm between Y-TSV and Y-cantilever Connect.
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| CN105984828B (en) * | 2015-03-06 | 2018-04-03 | 立锜科技股份有限公司 | Microcomputer electric component |
| US11733263B2 (en) * | 2018-09-21 | 2023-08-22 | Analog Devices, Inc. | 3-axis accelerometer |
| CN111998840B (en) * | 2020-08-28 | 2022-08-12 | 中电科技集团重庆声光电有限公司 | MEMS multi-axis vibration sensor structure |
| CN113311189A (en) * | 2021-05-25 | 2021-08-27 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
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| CN102607543A (en) * | 2012-04-01 | 2012-07-25 | 苏州文智芯微系统技术有限公司 | Silicon wafer directly-bonded micro-mechanical gyroscope based on silicon through hole technology |
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| CN204086302U (en) * | 2014-09-17 | 2015-01-07 | 安徽北方芯动联科微系统技术有限公司 | The 3 axis MEMS accelerometer of TSV wafer level packaging |
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