CN113311189A - Diffraction type silicon light acceleration sensor preparation process and obtained sensor - Google Patents
Diffraction type silicon light acceleration sensor preparation process and obtained sensor Download PDFInfo
- Publication number
- CN113311189A CN113311189A CN202110571000.7A CN202110571000A CN113311189A CN 113311189 A CN113311189 A CN 113311189A CN 202110571000 A CN202110571000 A CN 202110571000A CN 113311189 A CN113311189 A CN 113311189A
- Authority
- CN
- China
- Prior art keywords
- acceleration sensor
- type silicon
- diffraction type
- mass
- bragg reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 239000013307 optical fiber Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000002210 silicon-based material Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000001066 destructive effect Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means
Abstract
The application relates to a preparation process of a diffraction type silicon optical acceleration sensor and the obtained sensor. When the distance between the Bragg reflector array and the Bragg reflector is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array and the bragg mirror changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration can cause the light intensity of the outgoing optical fiber to change. The Bragg reflector array is arranged on the substrate silicon-based material, the Bragg reflector is arranged on the mass block, the structure is simple, the processing is convenient, the occupied space is small, and the mass production can be realized through the MEMS manufacturing process.
Description
Technical Field
The application belongs to the technical field of photon sensors, and particularly relates to a preparation process of a diffraction type silicon optical acceleration sensor and the obtained sensor
Background
At present, a micro-electromechanical system (MEMS) accelerometer is generally a capacitive type, but the capacitive type accelerometer has the disadvantages of low sensitivity, high power consumption, high temperature dependence and high cross sensitivity, and cannot be immune to electromagnetic interference, so that the MEMS accelerometer is not suitable for aerospace applications such as satellites.
The optical MEMS sensor is often used in industrial processes, aerospace and military applications, has strong electromagnetic interference immunity and can adapt to dangerous environment application scenes such as high temperature and the like.
KazemZandi et al, In the paper Design and optimization of an In-plane silicon-on-Insulator Optical MEMS fiber-P rot-Based interferometer With Channel Waveguides, disclose a sensor, as shown In FIG. 1, which requires the use of two masses, left and right, resulting In a complex structure and two masses that are prone to mass center offset due to processing errors during processing.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to solve the defects in the prior art, the preparation process of the diffraction type silicon light acceleration sensor and the obtained sensor are provided.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a preparation process of a diffraction type silicon optical acceleration sensor comprises the following steps:
s1: taking an SOI wafer, wherein the SOI wafer comprises a base layer, a top layer and an oxide layer positioned between the base layer and the top layer;
s2: coating photoresist on the surface of the top layer, etching to form a mass block, an elastic connecting structure and a fixed anchor, simultaneously etching to form a Bragg reflector on the mass block, and etching to form a waveguide block and a Bragg reflector array on the top layer;
s4: coating photoresist on the bottom surface of the base layer for etching, removing the base layer corresponding to the mass block and the elastic connection structure, and reserving the part connected with the fixed anchor;
s5: releasing the oxide layer to communicate the upper cavity with the lower cavity to form a cavity;
s6: and installing optical fibers and packaging to form the diffraction type silicon optical acceleration sensor.
Preferably, in the manufacturing process of the diffraction type silicon optical acceleration sensor, the base layer forms a base silicon-based material, and the anchor is a bump formed at four corners of the top of the base silicon-based material.
Preferably, in the preparation process of the diffraction type silicon optical acceleration sensor, the elastic connection structures are molded into a spring shape through an etching process, the 4 elastic connection structures are arranged in central symmetry, and the central symmetry point is in the same point with the mass center of the mass block.
Preferably, in the preparation process of the diffraction type silicon optical acceleration sensor, the four connection points of the 4 elastic connection structures and the fixed anchor form four vertices of a first rectangle, the four connection points of the 4 elastic connection structures and the mass block form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle.
Preferably, in the manufacturing process of the diffraction type silicon optical acceleration sensor, diagonals of the first rectangle and the second rectangle are collinear and intersect at the center of mass of the mass block.
Preferably, in the preparation process of the diffraction type silicon optical acceleration sensor, the waveguide block is located at the opening between the two fixed anchors.
Preferably, in the preparation process of the diffraction type silicon optical acceleration sensor, the number of the mass blocks is two, four corners of each mass block are provided with the elastic connection structures and the fixed anchors, meanwhile, each mass block is etched to form the Bragg reflector, and the top layer is etched to form two groups of waveguide blocks and Bragg reflector arrays.
Preferably, in the diffraction-type silicon optical acceleration sensor of the present invention, the central axes of the two diffraction-type silicon optical acceleration sensors are perpendicular.
The invention also provides a diffraction type silicon light acceleration sensor which is prepared by the preparation process of the diffraction type silicon light acceleration sensor.
The invention has the beneficial effects that:
according to the preparation process of the diffraction type silicon optical acceleration sensor and the obtained sensor, the optical fibers are functionally divided into the incident optical fibers and the emergent optical fibers, and acceleration information can be obtained by reading the light intensity change of the emergent optical fibers. When the distance between the Bragg reflector array and the Bragg reflector is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array and the bragg mirror changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration can cause the light intensity of the outgoing optical fiber to change. The Bragg reflector array is arranged on the substrate silicon-based material, the Bragg reflector is arranged on the mass block, the structure is simple, the processing is convenient, the occupied space is small, and the mass production can be realized through the MEMS manufacturing process.
Drawings
The technical solution of the present application is further explained below with reference to the drawings and the embodiments.
FIG. 1 is a schematic diagram of a prior art sensor configuration;
FIG. 2 is a plan view of a diffraction-type silicon optical acceleration sensor in example 1 of the present application;
fig. 3 is a side sectional view of a diffraction-type silicon optical acceleration sensor in embodiment 1 of the present application;
FIG. 4 is a top view of another embodiment of a diffractive silicon optical acceleration sensor of example 1 of the present application;
fig. 5 is a plan view of a diffraction-type silicon optical acceleration sensor of a differential structure in embodiment 1 of the present application;
FIG. 6 is a flow chart of a manufacturing process of a diffraction-type silicon optical acceleration sensor according to an embodiment of the present application;
fig. 7 is a structural diagram of a biaxial diffraction type silicon optical acceleration sensor having central axes perpendicular to each other.
The reference numbers in the figures are:
1 base silicon-based material
2 Anchor
3 mass block
4 waveguide block
5 Bragg reflector array
6 Bragg reflector
7 elastic connection structure
9 optical fiber
11 top layer
12 base layer
13 oxide layer
14 photoresist.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
The technical solutions of the present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Example 1
The present embodiment provides a diffraction-type silicon optical acceleration sensor, which is of a uniaxial diffraction type, and as shown in fig. 2, includes:
a substrate silicon-based material 1 with a cavity in the middle;
the fixed anchor 2 is positioned on the top of the base silicon-based material 1;
a waveguide block 4 connected to the optical fiber 9 and serving as a passage through which the optical fiber 9 emits or receives light;
the mass block 3 is positioned in the cavity, four corners of the mass block are connected with the fixed anchors 2 through elastic connection structures 7, and the vibration sensitive direction of the mass block 3 is parallel to the direction of light rays led in and out by the waveguide block 4;
the Bragg reflector array 5 is arranged on the substrate silicon-based material 1 and is a row of bulges with cavities arranged in a clearance way;
the Bragg reflector 6 is formed at the top of the mass block 3 and is a bulge with a cavity in the middle;
the incident optical fiber of the optical fiber 9 can emit light, one part of the light is reflected by the Bragg reflector array 5 after passing through the waveguide block 4, the other part of the light passes through the gap of the Bragg reflector array 5 and is reflected by the Bragg reflector 6, and the two parts of the reflected light are superposed and then collected by the waveguide block 4 and the emergent optical fiber of the optical fiber 9.
The optical fiber 9 is functionally divided into an incident optical fiber and an exit optical fiber, and acceleration information can be obtained by reading the light intensity change of the exit optical fiber. When the distance between the Bragg reflector array 5 and the Bragg reflector 6 is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array 5 and the bragg mirror 6 changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration causes the light intensity of the outgoing optical fiber to change.
According to the diffraction type silicon optical acceleration sensor, the Bragg reflector array 5 is arranged on the substrate silicon-based material 1, the Bragg reflector 6 is arranged on the mass block 3, the structure is simple, the processing is convenient, the occupied space is small, the sensor can be processed and formed at one time through an MEMS manufacturing process, and the batch manufacturing is convenient.
Preferably, the fixing anchors 2 are bumps formed at four corners of the top of the base silicon-based material 1.
Preferably, the elastic connection structures 7 are spring-shaped, and 4 of the elastic connection structures 7 are arranged in a central symmetry manner, and the central symmetry point is in common with the mass center of the mass block 3. The diagonals of the second rectangle of the first rectangle are collinear and intersect at the center of mass of the mass 3.
Preferably, the connection points of the 4 elastic connection structures 7 and the fixed anchor 2 form four vertices of a first rectangle, the connection points of the 4 elastic connection structures 7 and the mass block 3 form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle to form a stretching structure with an arrow shown in fig. 4, wherein the outward forces counteract each other, and the stiffness of the mass block in the non-sensitive direction is improved. It is further preferred that the diagonals of the second rectangle of said first rectangles are collinear and intersect at the centre of mass 3.
Preferably, the waveguide block 4 is located at the opening between the two fixed anchors 2. The arrangement at the opening can further reduce the required arrangement space.
Preferably, as shown in fig. 5, the optical fiber 9, the waveguide block 4, and the bragg reflector array 5 are two groups and located on two sides of the mass block 3, respectively, and the bragg reflectors 6 are also two groups and formed on two sides of the mass block 3, respectively. Two groups of the optical fibers 9, the waveguide block 4, the Bragg reflector array 5 and the Bragg reflector 6 form a differential structure, so that the sensitivity can be further improved.
The preparation process of the diffraction-type silicon optical acceleration sensor of the embodiment, as shown in fig. 6, includes the following steps:
s1: taking an SOI wafer, wherein the SOI wafer comprises a base layer 12, a top layer 11 and an oxide layer 13 positioned between the base layer 12 and the top layer 11;
s2: coating photoresist 14 on the surface of the top layer 11, etching to form a mass block 3, an elastic connecting structure 7 and a fixed anchor 2, simultaneously etching to form a Bragg reflector 6 on the mass block 3, and etching to form a waveguide block 4 and a Bragg reflector array 5 on the top layer 11;
s4: coating photoresist on the bottom surface of the base layer 12 for etching, removing the base layer 12 corresponding to the mass block 3 and the elastic connection structure 7, and reserving the part connected with the fixed anchor 2;
s5: releasing the oxide layer 13 to communicate the upper cavity with the lower cavity to form a cavity;
s6: and installing the optical fiber 9 and packaging to form the diffraction type silicon optical acceleration sensor.
The base layer 12 serves as a base silicon-based material 1 for connecting the anchor 2, and the top layer 11 forms the anchor 2 and the proof mass 3.
The fixed anchors 2 are bumps formed at four corners of the top of the substrate silicon-based material 1.
Furthermore, the elastic connecting structures 7 are formed into a spring shape through an etching process, and 4 elastic connecting structures 7 are arranged in a central symmetry mode, and the central symmetry point is in the same point with the mass center of the mass block 3.
Furthermore, the connection points of the 4 elastic connection structures 7 and the fixed anchors 2 form four vertices of a first rectangle, the connection points of the 4 elastic connection structures 7 and the mass block 3 form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle.
Further, the diagonals of the first rectangle and the second rectangle are collinear and intersect at the center of mass of the mass block 3.
Further, the waveguide block 4 is located at the opening between the two fixed anchors 2.
The diffraction type silicon optical acceleration sensor obtained based on the method can also be obtained by bonding the base layers 12 of the two diffraction type silicon optical acceleration sensors.
The arrangement mode of the two diffraction type silicon optical acceleration sensors can be that the central axes are collinear or mutually perpendicular.
The chip processing technology in the application comprises the following steps: photolithography, etching, ion implantation or doping, sputtering or deposition processes. Existing processes may be used unless otherwise specified.
In light of the foregoing description of the preferred embodiments according to the present application, it is to be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of the claims.
Claims (9)
1. A preparation process of a diffraction type silicon optical acceleration sensor is characterized by comprising the following steps:
s1: taking an SOI wafer, wherein the SOI wafer comprises a base layer (12), a top layer (11) and an oxide layer (13) positioned between the base layer (12) and the top layer (11);
s2: coating photoresist (14) on the surface of the top layer (11), etching to form a mass block (3), an elastic connecting structure (7) and a fixed anchor (2), simultaneously etching to form a Bragg reflector (6) on the mass block (3), and etching to form a waveguide block (4) and a Bragg reflector array (5) on the top layer (11);
s4: coating photoresist on the bottom surface of the base layer (12) for etching, removing the base layer (12) corresponding to the mass block (3) and the elastic connection structure (7), and reserving the part connected with the fixed anchor (2);
s5: releasing the oxide layer (13) to communicate the upper cavity with the lower cavity to form a cavity;
s6: and installing an optical fiber (9) and packaging to form the diffraction type silicon optical acceleration sensor.
2. The manufacturing process of the diffraction type silicon optical acceleration sensor according to claim 1, wherein the base layer (12) forms a base silicon-based material (1) and the anchor anchors (2) are bumps formed at four corners of the top of the base silicon-based material (1).
3. The manufacturing process of the diffraction type silicon light acceleration sensor according to claim 1, characterized in that the elastic connection structures (7) are formed into a spring shape by an etching process, and 4 elastic connection structures (7) are arranged in a central symmetry mode, and the central symmetry point is in common with the mass center of the mass block (3).
4. The manufacturing process of the diffraction type silicon optical acceleration sensor according to claim 3, wherein 4 connecting points of the elastic connecting structure (7) and the fixed anchor (2) form four vertices of a first rectangle, 4 connecting points of the elastic connecting structure (7) and the mass block (3) form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle.
5. The manufacturing process of the diffraction type silicon light acceleration sensor according to claim 4, characterized in that the diagonals of the first rectangle and the second rectangle are collinear and intersect at the center of mass of the mass block (3).
6. The process for preparing a diffractive silicon light acceleration sensor according to claim 4, characterized in that the waveguide block (4) is located at the opening between two fixed anchors (2).
7. The manufacturing process of the diffraction type silicon optical acceleration sensor according to claim 1, characterized in that the mass blocks (3) are two, four corners of the two mass blocks (3) are provided with the elastic connection structures (7) and the fixed anchors (2), meanwhile, a Bragg reflector (6) is formed on each mass block (3) by etching, and two groups of waveguide blocks (4) and Bragg reflector arrays (5) are formed on the top layer (11) by etching.
8. The diffractive silicon optical acceleration sensor according to claim 7, characterized in that the central axes of the two diffractive silicon optical acceleration sensors are perpendicular.
9. A diffraction type silicon light acceleration sensor, which is prepared by the preparation process of the diffraction type silicon light acceleration sensor as claimed in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110571000.7A CN113311189A (en) | 2021-05-25 | 2021-05-25 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110571000.7A CN113311189A (en) | 2021-05-25 | 2021-05-25 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113311189A true CN113311189A (en) | 2021-08-27 |
Family
ID=77374490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110571000.7A Pending CN113311189A (en) | 2021-05-25 | 2021-05-25 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113311189A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884703A (en) * | 2021-10-22 | 2022-01-04 | 欧梯恩智能科技(苏州)有限公司 | Triaxial fiber accelerometer |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743850A (en) * | 2005-09-26 | 2006-03-08 | 西安交通大学 | Optical acceleration sensor based on Fresnel diffraction micr-lens |
| KR20110040380A (en) * | 2009-10-14 | 2011-04-20 | 한국표준과학연구원 | Probe using bragg grating and fabry perot interferometer, fiber sensor system and sensing method thereof |
| CN103175992A (en) * | 2013-02-27 | 2013-06-26 | 浙江大学 | Micro-optical acceleration sensor with integrated grating electro-optical effect and detection method thereof |
| US20140076050A1 (en) * | 2012-09-20 | 2014-03-20 | Pixart Imaging Inc | Optical accelerometer |
| CN204255978U (en) * | 2014-11-25 | 2015-04-08 | 东南大学 | A kind of split type difference silicon micro-resonance type accelerometer |
| CN105372449A (en) * | 2015-12-03 | 2016-03-02 | 浙江大学 | Micro mechanical acceleration sensitive structure for inhibiting crosstalk in high-precision single-shaft optical micro-accelerometer, and manufacturing method thereof |
| CN205861720U (en) * | 2016-07-26 | 2017-01-04 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of machinery and the resonance type accelerometer of electricity decoupling |
| CN110146725A (en) * | 2019-05-21 | 2019-08-20 | 深迪半导体(上海)有限公司 | Resonance micro electromechanical acceleration transducer and accelerometer |
| CN110146949A (en) * | 2019-05-29 | 2019-08-20 | 西北工业大学深圳研究院 | A kind of narrow-band spectrum filter structure and preparation method thereof |
| CN110208576A (en) * | 2019-06-18 | 2019-09-06 | 上海应用技术大学 | A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula |
| CN110632026A (en) * | 2019-09-23 | 2019-12-31 | 欧梯恩智能科技(苏州)有限公司 | Optical gas detection device |
-
2021
- 2021-05-25 CN CN202110571000.7A patent/CN113311189A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743850A (en) * | 2005-09-26 | 2006-03-08 | 西安交通大学 | Optical acceleration sensor based on Fresnel diffraction micr-lens |
| KR20110040380A (en) * | 2009-10-14 | 2011-04-20 | 한국표준과학연구원 | Probe using bragg grating and fabry perot interferometer, fiber sensor system and sensing method thereof |
| US20140076050A1 (en) * | 2012-09-20 | 2014-03-20 | Pixart Imaging Inc | Optical accelerometer |
| CN103175992A (en) * | 2013-02-27 | 2013-06-26 | 浙江大学 | Micro-optical acceleration sensor with integrated grating electro-optical effect and detection method thereof |
| CN204255978U (en) * | 2014-11-25 | 2015-04-08 | 东南大学 | A kind of split type difference silicon micro-resonance type accelerometer |
| CN105372449A (en) * | 2015-12-03 | 2016-03-02 | 浙江大学 | Micro mechanical acceleration sensitive structure for inhibiting crosstalk in high-precision single-shaft optical micro-accelerometer, and manufacturing method thereof |
| CN205861720U (en) * | 2016-07-26 | 2017-01-04 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of machinery and the resonance type accelerometer of electricity decoupling |
| CN110146725A (en) * | 2019-05-21 | 2019-08-20 | 深迪半导体(上海)有限公司 | Resonance micro electromechanical acceleration transducer and accelerometer |
| CN110146949A (en) * | 2019-05-29 | 2019-08-20 | 西北工业大学深圳研究院 | A kind of narrow-band spectrum filter structure and preparation method thereof |
| CN110208576A (en) * | 2019-06-18 | 2019-09-06 | 上海应用技术大学 | A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula |
| CN110632026A (en) * | 2019-09-23 | 2019-12-31 | 欧梯恩智能科技(苏州)有限公司 | Optical gas detection device |
Non-Patent Citations (2)
| Title |
|---|
| KAZEM ZANDI: "Design and Demonstration of an In-Plane Silicon-on-Insulator Optical MEMS Fabry–Pérot-Based Accelerometer Integrated With Channel Waveguides", JOURNAL OF MICROELEC TROMECHANICAL SYSTEMS, pages 1464 - 1470 * |
| 贾书海;孔维军;杨佳;: "基于衍射微透镜的光学加速度传感器设计", 光学学报, no. 08 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113884703A (en) * | 2021-10-22 | 2022-01-04 | 欧梯恩智能科技(苏州)有限公司 | Triaxial fiber accelerometer |
| CN113884703B (en) * | 2021-10-22 | 2024-01-09 | 欧梯恩智能科技(苏州)有限公司 | Triaxial fiber optic accelerometer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4880736B2 (en) | Mirror substrate manufacturing method | |
| CN110133321B (en) | Monolithic integrated optical accelerometer based on phase detection | |
| US8792179B2 (en) | Laminated micromirror package | |
| CN112285380B (en) | Optical MEMS acceleration sensor and preparation method thereof | |
| WO1996000919A1 (en) | Passively aligned bi-directional optoelectronic transceiver module assembly | |
| CN110133322B (en) | Monolithic integrated optical accelerometer based on electro-optical effect | |
| US20150075283A1 (en) | Capacitive Acceleration Sensor with a Bending Elastic Beam and Preparation Method Thereof | |
| CN110329982B (en) | In-plane accelerometer based on rotating folding beam and nano optical resonant cavity and method | |
| CN113311189A (en) | Diffraction type silicon light acceleration sensor preparation process and obtained sensor | |
| CN113030513A (en) | Diffraction type silicon light acceleration sensor | |
| CN113311188A (en) | Double-shaft diffraction type silicon light acceleration sensor and preparation method thereof | |
| CN104502630A (en) | Single-chip double-axis horizontal optical fiber acceleration sensor and preparation method thereof | |
| CN106841679B (en) | High-precision micro-optical electromechanical system accelerometer resistant to large impact | |
| US20120274176A1 (en) | Micro-electro-mechanical systems (mems) | |
| CN108195366B (en) | Processing method of micro-nano gyroscope based on double-layer nano grating | |
| CN101625242B (en) | MOEMS gyro cavity resonator and method for adjusting micro-mirror spatial state thereof | |
| CN114414844B (en) | Fabry-Perot optical MEMS acceleration sensitive chip, sensitization method and sensor | |
| CN116068224A (en) | Optical micro-electromechanical structure with controllable modulation precision | |
| CN115728511A (en) | Sensitive structure and forming method thereof | |
| CN117073670A (en) | Inertial sensor | |
| CN113884703A (en) | Triaxial fiber accelerometer | |
| CN115201516A (en) | Acceleration detection device | |
| CN115728512A (en) | Optical fiber acceleration sensor and forming method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |