CN113030513A - Diffraction type silicon light acceleration sensor - Google Patents
Diffraction type silicon light acceleration sensor Download PDFInfo
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- CN113030513A CN113030513A CN202110570743.2A CN202110570743A CN113030513A CN 113030513 A CN113030513 A CN 113030513A CN 202110570743 A CN202110570743 A CN 202110570743A CN 113030513 A CN113030513 A CN 113030513A
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- 230000001133 acceleration Effects 0.000 title claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 239000013307 optical fiber Substances 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 239000002210 silicon-based material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000001066 destructive effect Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
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Abstract
The application relates to a diffraction type silicon optical acceleration sensor, wherein optical fibers are functionally divided into an incident optical fiber and an emergent optical fiber, and acceleration information can be obtained by reading the light intensity change of the emergent optical fiber. When the distance between the Bragg reflector array and the Bragg reflector is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array and the bragg mirror changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration can cause the light intensity of the outgoing optical fiber to change. The Bragg reflector array is arranged on the substrate silicon-based material, the Bragg reflector is arranged on the mass block, the structure is simple, the processing is convenient, the occupied space is small, and the mass-type MEMS resonator can be manufactured in batches through an MEMS manufacturing process.
Description
Technical Field
The application belongs to the technical field of photon sensors, and particularly relates to a diffraction type silicon optical acceleration sensor.
Background
At present, a micro-electromechanical system (MEMS) accelerometer is generally a capacitive type, but the capacitive type accelerometer has the disadvantages of low sensitivity, high power consumption, high temperature dependence and high cross sensitivity, and cannot be immune to electromagnetic interference, so that the MEMS accelerometer is not suitable for aerospace applications such as satellites.
The optical MEMS sensor is often used in industrial processes, aerospace and military applications, has strong electromagnetic interference immunity and can adapt to dangerous environment application scenes such as high temperature and the like.
KazemZandi et al, In the paper Design and optimization of an In-Plane Silicon-on-Insulator Optical MEMS fiber-Based interferometer Integrated With Channel Waveguides, disclose a sensor, as shown In FIG. 1, which requires the use of two masses, left and right, resulting In a complex structure and two masses that are prone to center-of-mass shift during processing due to processing errors.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to solve the defects in the prior art, the preparation method of the diffraction type silicon light acceleration sensor and the chip is provided.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a diffractive silicon optical acceleration sensor comprising:
a substrate silicon-based material with a cavity in the middle;
the fixed anchor is positioned on the top of the base silicon-based material;
the waveguide block is connected with the optical fiber and used as a passage for the optical fiber to send out or receive light;
the mass block is positioned in the cavity, four corners of the mass block are connected with the fixed anchors through elastic connection structures, and the vibration sensitive direction of the mass block is parallel to the direction of light rays led in and out by the waveguide block;
the Bragg reflector array is arranged on the substrate silicon-based material and is a row of bulges with cavities arranged in a clearance way;
the Bragg reflector is formed at the top of the mass block and is a bulge with a cavity in the middle;
the incident optical fiber of the optical fiber can emit light, one part of the light is reflected by the Bragg reflector array after passing through the waveguide block, the other part of the light passes through the gap of the Bragg reflector array and is reflected by the Bragg reflector, and the two parts of the reflected light are superposed and then collected by the waveguide block and the emergent optical fiber of the optical fiber.
Preferably, in the diffraction silicon optical acceleration sensor of the present invention, the anchor is a bump formed at four corners of the top of the base silicon-based material.
Preferably, in the diffraction type silicon optical acceleration sensor, the elastic connection structures are spring-shaped, 4 elastic connection structures are arranged in central symmetry, and the central symmetry point is in common with the mass center of the mass block.
Preferably, in the diffraction-type silicon optical acceleration sensor of the present invention, 4 connection points of the elastic connection structure and the fixed anchor form four vertices of a first rectangle, 4 connection points of the elastic connection structure and the mass block form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle.
Preferably, in the diffraction silicon optical acceleration sensor of the present invention, diagonals of a second rectangle of the first rectangle are collinear and intersect at the center of mass of the mass block.
Preferably, in the diffraction silicon optical acceleration sensor of the present invention, the waveguide block is located at an opening between two fixed anchors.
Preferably, in the diffraction silicon optical acceleration sensor of the present invention, the optical fibers, the waveguide block, and the bragg reflector arrays are two groups and located on two sides of the mass block respectively, and the two bragg reflectors are formed on two sides of the mass block respectively.
Preferably, the diffraction type silicon optical acceleration sensor is prepared by an MEMS process by using an SOI wafer.
The invention has the beneficial effects that:
according to the diffraction type silicon optical acceleration sensor, the optical fibers are functionally divided into the incident optical fibers and the emergent optical fibers, and acceleration information can be obtained by reading the light intensity change of the emergent optical fibers. When the distance between the Bragg reflector array and the Bragg reflector is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array and the bragg mirror changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration can cause the light intensity of the outgoing optical fiber to change. The Bragg reflector array is arranged on the substrate silicon-based material, the Bragg reflector is arranged on the mass block, the structure is simple, the processing is convenient, the occupied space is small, and the mass-type MEMS resonator can be manufactured in batches through an MEMS manufacturing process.
Drawings
The technical solution of the present application is further explained below with reference to the drawings and the embodiments.
FIG. 1 is a schematic diagram of a prior art sensor configuration;
FIG. 2 is a plan view of a diffraction-type silicon optical acceleration sensor in example 1 of the present application;
fig. 3 is a side sectional view of a diffraction-type silicon optical acceleration sensor in embodiment 1 of the present application;
FIG. 4 is a top view of another embodiment of a diffractive silicon optical acceleration sensor of example 1 of the present application;
fig. 5 is a plan view of a diffraction-type silicon optical acceleration sensor of a differential structure in embodiment 1 of the present application;
fig. 6 is a flowchart of a manufacturing process of a diffraction-type silicon optical acceleration sensor according to an embodiment of the present application.
The reference numbers in the figures are:
1 base silicon-based material
2 Anchor
3 mass block
4 waveguide block
5 Bragg reflector array
6 Bragg reflector
7 elastic connection structure
9 optical fiber
11 top layer
12 base layer
13 oxide layer
14 photoresist.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
The technical solutions of the present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Example 1
The present embodiment provides a diffraction-type silicon optical acceleration sensor, which is of a uniaxial diffraction type, and as shown in fig. 2 and 3, includes:
a substrate silicon-based material 1 with a cavity in the middle;
the fixed anchor 2 is positioned on the top of the base silicon-based material 1;
a waveguide block 4 connected to the optical fiber 9 and serving as a passage through which the optical fiber 9 emits or receives light;
the mass block 3 is positioned in the cavity, four corners of the mass block are connected with the fixed anchors 2 through elastic connection structures 7, and the vibration sensitive direction of the mass block 3 is parallel to the direction of light rays led in and out by the waveguide block 4; (the mass 3 is not connected with the base silicon-based material 1 by any other structure except that it is connected with the anchor 2 by the elastic connection structure 7)
The Bragg reflector array 5 is arranged on the substrate silicon-based material 1 and is a row of bulges with cavities arranged in a clearance way;
the Bragg reflector 6 is formed at the top of the mass block 3 and is a bulge with a cavity in the middle;
the incident optical fiber of the optical fiber 9 can emit light, one part of the light is reflected by the bragg reflector array 5 after passing through the waveguide block 4, the other part of the light passes through the gap of the bragg reflector array 5 and is reflected by the bragg reflector 6, and the two parts of the reflected light are superposed (the superposition should be carried out in the same space, and the two parts of the reflected light may or may not interfere according to the characteristics of light propagation) and then are collected by the waveguide block 4 and the emergent optical fiber of the optical fiber 9.
The optical fiber 9 is functionally divided into an incident optical fiber and an exit optical fiber, and acceleration information can be obtained by reading the light intensity change of the exit optical fiber. When the distance between the Bragg reflector array 5 and the Bragg reflector 6 is the wavelength of light emitted by one optical fiber, the light reflected by the two surfaces is in the same phase and can be regarded as total reflection; when vibration occurs, the distance between the bragg mirror array 5 and the bragg mirror 6 changes, and when the wavelength changes by 1/4 wavelengths, the reflection of the two surfaces is out of phase, destructive interference occurs, and the generation of vibration causes the light intensity of the outgoing optical fiber to change.
According to the diffraction type silicon optical acceleration sensor, the Bragg reflector array 5 is arranged on the substrate silicon-based material 1, the Bragg reflector 6 is arranged on the mass block 3, the structure is simple, the processing is convenient, the occupied space is small, the sensor can be processed and formed at one time through an MEMS manufacturing process, and the batch manufacturing is convenient.
Preferably, the fixing anchors 2 are bumps formed at four corners of the top of the base silicon-based material 1.
Preferably, the elastic connection structures 7 are spring-shaped, and 4 of the elastic connection structures 7 are arranged in a central symmetry manner, and the central symmetry point is in common with the mass center of the mass block 3. The diagonals of the second rectangle of the first rectangle are collinear and intersect at the center of mass of the mass 3.
Preferably, the connection points of the 4 elastic connection structures 7 and the fixed anchor 2 form four vertices of a first rectangle, the connection points of the 4 elastic connection structures 7 and the mass block 3 form four vertices of a second rectangle, and the first rectangle is larger than the second rectangle to form a stretching structure with an arrow shown in fig. 4, wherein the outward forces counteract each other, and the stiffness of the mass block in the non-sensitive direction is improved. It is further preferred that the diagonals of the second rectangle of said first rectangles are collinear and intersect at the centre of mass 3.
Preferably, the waveguide block 4 is located at the opening between the two fixed anchors 2. The arrangement at the opening can further reduce the required arrangement space.
Preferably, as shown in fig. 5, the optical fiber 9, the waveguide block 4, and the bragg reflector array 5 are two groups and located on two sides of the mass block 3, respectively, and the bragg reflectors 6 are also two groups and formed on two sides of the mass block 3, respectively. Two groups of the optical fibers 9, the waveguide block 4, the Bragg reflector array 5 and the Bragg reflector 6 form a differential structure, so that the sensitivity can be further improved.
The preparation process of the diffraction-type silicon optical acceleration sensor of the embodiment, as shown in fig. 6, includes the following steps:
s1: taking an SOI wafer, wherein the SOI wafer comprises a base layer 12, a top layer 11 and an oxide layer 13 positioned between the base layer 12 and the top layer 11;
s2: coating photoresist 14 on the surface of the top layer 11, etching to form a mass block 3, an elastic connecting structure 7 and a fixed anchor 2, simultaneously etching to form a Bragg reflector 6 on the mass block 3, and etching to form a waveguide block 4 and a Bragg reflector array 5 on the top layer 11;
s4: coating photoresist on the bottom surface of the base layer 12 for etching, removing the base layer 12 corresponding to the mass block 3 and the elastic connection structure 7, and reserving the part connected with the fixed anchor 2;
s5: releasing the oxide layer 13 to communicate the upper cavity with the lower cavity to form a cavity;
s6: and installing the optical fiber 9 and packaging to form the diffraction type silicon optical acceleration sensor.
The base layer 12 serves as a base silicon-based material 1 for connecting the anchor 2, and the top layer 11 forms the anchor 2 and the proof mass 3.
The chip processing technology in the application comprises the following steps: photolithography, etching, ion implantation or doping, sputtering or deposition processes. Existing processes may be used unless otherwise specified.
In light of the foregoing description of the preferred embodiments according to the present application, it is to be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of the claims.
Claims (8)
1. A diffractive silicon optical acceleration sensor, comprising:
a base silicon-based material (1) having a cavity in the middle;
the fixed anchor (2) is positioned on the top of the base silicon-based material (1);
a waveguide block (4) connected to the optical fiber (9) and serving as a passage through which the optical fiber (9) emits or receives light;
the mass block (3) is positioned in the cavity, four corners of the mass block are connected with the fixed anchor (2) through elastic connection structures (7), and the vibration sensitive direction of the mass block (3) is parallel to the direction of light rays led in and out of the waveguide block (4);
the Bragg reflector array (5) is arranged on the substrate silicon-based material (1) and is a row of bulges with cavities arranged in a clearance way;
the Bragg reflector (6) is formed at the top of the mass block (3) and is a bulge with a cavity in the middle;
the incident optical fiber of the optical fiber (9) can emit light, one part of the light is reflected by the Bragg reflector array (5) after passing through the waveguide block (4), the other part of the light passes through the gap of the Bragg reflector array (5) and is reflected by the Bragg reflector (6), and the two parts of the reflected light are collected by the waveguide block (4) and the emergent optical fiber of the optical fiber (9) after being superposed.
2. The diffractive silicon optical acceleration sensor according to claim 1, characterized in that the anchor (2) is a bump formed at four corners of the top of the base silicon-based material (1).
3. The diffractive silicon optical acceleration sensor according to claim 1, characterized in that the elastic connection structures (7) are spring-shaped, and 4 of the elastic connection structures (7) are arranged in a central symmetry, and the central symmetry is in common with the mass center of the mass block (3).
4. The diffractive silicon photo-acceleration sensor according to claim 3, characterized in that the connection points of 4 elastic connection structures (7) with the fixed anchor (2) form four vertices of a first rectangle, and the connection points of 4 elastic connection structures (7) with the mass (3) form four vertices of a second rectangle, the first rectangle being larger than the second rectangle.
5. The diffractive silicon light acceleration sensor according to claim 4, characterized in that the diagonals of the second rectangle of the first rectangle are collinear and intersect at the center of mass of the mass (3).
6. The diffractive silicon light acceleration sensor according to claim 4, characterized by that, the waveguide block (4) is located at the opening between two fixed anchors (2).
7. The diffractive silicon optical acceleration sensor according to claim 1, characterized in that the optical fibers (9), the waveguide block (4) and the bragg reflector array (5) are two groups and located on two sides of the mass block (3), respectively, and the bragg reflectors (6) are also two groups and formed on two sides of the mass block (3), respectively.
8. The diffractive silicon photo-acceleration sensor according to any one of claims 1 to 7, characterized in that it is produced by MEMS process using SOI wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110570743.2A CN113030513A (en) | 2021-05-25 | 2021-05-25 | Diffraction type silicon light acceleration sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110570743.2A CN113030513A (en) | 2021-05-25 | 2021-05-25 | Diffraction type silicon light acceleration sensor |
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Cited By (2)
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| CN113884703A (en) * | 2021-10-22 | 2022-01-04 | 欧梯恩智能科技(苏州)有限公司 | Triaxial fiber accelerometer |
| CN114236683A (en) * | 2021-12-23 | 2022-03-25 | 欧梯恩智能科技(苏州)有限公司 | Self-coupling photon acceleration sensor chip and manufacturing method thereof |
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