CN104502630A - Single-chip double-axis horizontal optical fiber acceleration sensor and preparation method thereof - Google Patents
Single-chip double-axis horizontal optical fiber acceleration sensor and preparation method thereof Download PDFInfo
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- 230000001133 acceleration Effects 0.000 title claims abstract description 182
- 239000013307 optical fiber Substances 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000000835 fiber Substances 0.000 claims abstract description 29
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract 2
- 238000004806 packaging method and process Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 14
- 238000001514 detection method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000708 deep reactive-ion etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920006253 high performance fiber Polymers 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
本发明提供一种单芯片双轴水平光纤加速度传感器及其制备方法，包括：在第一基底上形成两个敏感方向相互正交的、对水平加速度敏感的单轴加速度敏感单元，单轴加速度敏感单元包括微反光镜、弹性梁以及光高反射膜，在第二基底表面形成微反光镜扭转空间；将第一基底与第二基底键合；对双轴加速度敏感芯片和光纤准直器进行光学耦合封装。本发明将两个敏感方向正交的单轴加速度敏感芯片集成在同一衬底上，且光信号的传输在双轴加速度敏感芯片一侧，大大简化了基于MEMS技术的单芯片双轴加速度传感器的封装。
The invention provides a single-chip dual-axis horizontal optical fiber acceleration sensor and a preparation method thereof, comprising: forming two uniaxial acceleration sensitive units on a first substrate with two sensitive directions orthogonal to each other and sensitive to horizontal acceleration, the uniaxial acceleration sensitive The unit includes a micro-mirror, an elastic beam, and an optical high-reflection film, forming a micro-mirror torsion space on the surface of the second substrate; bonding the first substrate to the second substrate; optically performing a biaxial acceleration-sensitive chip and a fiber collimator. coupling package. The invention integrates two uniaxial acceleration sensitive chips with orthogonal sensitive directions on the same substrate, and the transmission of the optical signal is on the side of the biaxial acceleration sensitive chip, which greatly simplifies the process of the single-chip biaxial acceleration sensor based on MEMS technology. encapsulation.
Description
技术领域technical field
本发明涉及传感器领域，特别是涉及一种单芯片双轴水平光纤加速度传感器及其制备方法。The invention relates to the field of sensors, in particular to a single-chip biaxial horizontal optical fiber acceleration sensor and a preparation method thereof.
背景技术Background technique
加速度传感器可以测量运动物体加速度，在惯性测量、惯性导航、振动测量等应用中具有广泛的需求。相对于压阻、压电、电容原理的传统加速度传感器，光纤加速度传感器以其技术特点成为一类重要的加速度传感器，正在受到越来越多的重视，在国民经济、国防中获得了广泛应用。在一些重要、特殊应用领域，例如航空航天的制导系统、石油勘探的地震检波系统、舰船的振动监测、桥梁建筑结构检测系统、交通情况监测系统等，急需具有抗电磁干扰、高灵敏度、大动态范围、易复用的高性能光纤加速度传感器。Acceleration sensors can measure the acceleration of moving objects, and have a wide range of requirements in applications such as inertial measurement, inertial navigation, and vibration measurement. Compared with traditional acceleration sensors based on piezoresistive, piezoelectric, and capacitive principles, optical fiber acceleration sensors have become an important type of acceleration sensors due to their technical characteristics, and are receiving more and more attention, and have been widely used in national economy and national defense. In some important and special application fields, such as aerospace guidance system, oil exploration seismic detection system, ship vibration monitoring, bridge building structure detection system, traffic condition monitoring system, etc., there is an urgent need for anti-electromagnetic interference, high sensitivity, large Dynamic range, easy-to-reuse, high-performance fiber optic acceleration sensor.
光纤加速度传感器按光学敏感原理主要可以分为光强调制型、相位调制型和波长调制型，业已开展了广泛、深入的研究，其中MEMS光纤加速度传感器引起了人们广泛的关注。MEMS光纤加速度传感器采用MEMS敏感结构和光纤检测技术，融合了MEMS微制造技术和光纤传感技术的特点，具有体积小、灵敏度高、批量制造等技术优势。Optical fiber acceleration sensors can be divided into light intensity modulation type, phase modulation type and wavelength modulation type according to the principle of optical sensitivity. Extensive and in-depth research has been carried out, among which MEMS fiber optic acceleration sensors have attracted widespread attention. MEMS optical fiber acceleration sensor adopts MEMS sensitive structure and optical fiber detection technology, integrates the characteristics of MEMS micro-manufacturing technology and optical fiber sensing technology, and has technical advantages such as small size, high sensitivity, and batch manufacturing.
加速度是一个矢量信号，加速度传感器通常具有方向性敏感响应，据此MEMS光纤加速度传感器可以划分为单轴、双轴和三轴MEMS光纤加速度传感器。在诸如矢量水听器，惯性导航和姿态控制等实际应用中，通常需要完整的加速度信息，研制基于MEMS技术的三轴光纤加速度传感器具有重要意义。Acceleration is a vector signal, and acceleration sensors usually have a directional sensitive response. According to this, MEMS fiber optic acceleration sensors can be divided into single-axis, dual-axis and three-axis MEMS fiber optic acceleration sensors. In practical applications such as vector hydrophones, inertial navigation and attitude control, complete acceleration information is usually required, so it is of great significance to develop a three-axis fiber optic acceleration sensor based on MEMS technology.
通过封装和集成技术，基于MEMS技术的三轴加速度传感器可通过三种方式实现:(1)三个单轴加速度敏感单元直接封装成三轴加速度传感器。这种实现方式增加了三轴加速度传感器的体积和封装成本，而且在封装过程中由于各单轴传感器的正交失配，三轴加速度传感器的交差灵敏度是不可避免的，从而导致传感器的性能退化。(2)由单一质量块和若干弹性梁构成多自由度的加速度传感器，加速度传感器前三个振动模分别传感加速度的三个分量。然而，设计和制造这种单芯片的三轴加速度传感器是复杂的，而且在不同敏感方向具有相同的性能是充满挑战的。(3)三个单轴加速度传感器单元通过MEMS技术制造在单一的衬底上形成单芯片的三轴加速度传感器。与上述的MEMS三轴加速度传感器相比，这类加速度传感器有很多优点：其中包括适中的体积，小的交叉灵敏度，而且易实现在不同敏感方向具有相同性能。但是，目前已实现的基于MEMS技术的单芯片三轴加速度传感器是直接将加速度信号转换成电信号，而不是利用光纤检测技术转换成光信号。Through packaging and integration technology, the three-axis acceleration sensor based on MEMS technology can be realized in three ways: (1) Three single-axis acceleration sensitive units are directly packaged into a three-axis acceleration sensor. This implementation method increases the volume and packaging cost of the three-axis acceleration sensor, and due to the orthogonality mismatch of each single-axis sensor during the packaging process, the cross-sensitivity of the three-axis acceleration sensor is inevitable, resulting in the performance degradation of the sensor . (2) A multi-degree-of-freedom acceleration sensor is composed of a single mass block and several elastic beams, and the first three vibration modes of the acceleration sensor sense three components of acceleration respectively. However, designing and fabricating such a single-chip triaxial accelerometer is complex, and it is challenging to have the same performance in different sensitive directions. (3) The three uniaxial acceleration sensor units are manufactured by MEMS technology to form a single-chip three-axis acceleration sensor on a single substrate. Compared with the above-mentioned MEMS three-axis acceleration sensor, this type of acceleration sensor has many advantages: including moderate volume, small cross-sensitivity, and easy to achieve the same performance in different sensitive directions. However, the current single-chip three-axis acceleration sensor based on MEMS technology directly converts the acceleration signal into an electrical signal instead of converting it into an optical signal by using optical fiber detection technology.
发明内容Contents of the invention
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种单芯片双轴水平光纤加速度传感器及其制备方法，易于和我们已经实现的基于MEMS技术的垂直轴光纤加速度传感器集成，实现基于MEMS技术的单芯片三轴加速度传感器。In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a single-chip dual-axis horizontal optical fiber acceleration sensor and a preparation method thereof, which is easy to integrate with the vertical axis optical fiber acceleration sensor based on MEMS technology that we have realized, and realizes based on Single-chip three-axis acceleration sensor of MEMS technology.
为实现上述目的及其他相关目的，本发明提供一种单芯片双轴水平光纤加速度传感器，所述单芯片双轴水平光纤加速度传感器至少包括：In order to achieve the above purpose and other related purposes, the present invention provides a single-chip dual-axis horizontal optical fiber acceleration sensor, the single-chip dual-axis horizontal optical fiber acceleration sensor at least includes:
第一基底，用于形成具有两个单轴加速度敏感单元的双轴加速度敏感芯片；所述单轴加速度敏感单元包含微反光镜、弹性梁以及光高反射膜，所述微反光镜由所述弹性梁支撑，所述弹性梁的两端分别与所述微反光镜和支撑框连接，所述光高反射膜附着在所述微反光镜上；The first substrate is used to form a biaxial acceleration sensitive chip with two uniaxial acceleration sensitive units; the uniaxial acceleration sensitive unit includes a micro-mirror, an elastic beam and a high-reflection film, and the micro-mirror is made of the said micro-mirror. Supported by an elastic beam, the two ends of the elastic beam are respectively connected to the micro-mirror and the support frame, and the optical high reflection film is attached to the micro-mirror;
第二基底，形成微反光镜扭转空间，作为晶圆级封装；The second substrate forms a micro-mirror torsion space as a wafer-level package;
以及光纤准直器，与所述双轴加速度敏感芯片通过同一封装管壳封装。And a fiber collimator, which is packaged with the biaxial acceleration sensitive chip through the same packaging shell.
优选地，所述双轴加速度敏感芯片的对加速度的敏感方向与所述的双轴加速度敏感芯片平面平行。Preferably, the acceleration sensitive direction of the biaxial acceleration sensitive chip is parallel to the plane of the biaxial acceleration sensitive chip.
优选地，所述的双轴加速度敏感芯片将水平方向的加速度转化为所述微反光镜的扭转角。Preferably, the biaxial acceleration sensitive chip converts the acceleration in the horizontal direction into the torsion angle of the micro-mirror.
优选地，所述单芯片双轴水平光纤加速度传感器包括两个光纤准直器，位于所述双轴加速度敏感芯片的同一侧。Preferably, the single-chip biaxial horizontal optical fiber acceleration sensor includes two optical fiber collimators located on the same side of the biaxial acceleration sensitive chip.
优选地，所述两个单轴加速度敏感单元的敏感方向正交。Preferably, the sensing directions of the two uniaxial acceleration sensing units are orthogonal.
优选地，所述微反光镜的重心在所述弹性梁轴线正下方。Preferably, the center of gravity of the micro-mirror is directly below the axis of the elastic beam.
优选地，利用所述光纤准直器对入射光耦合特性和所述双轴加速度敏感芯片实现单芯片双轴水平光纤加速度传感器。Preferably, a single-chip dual-axis horizontal optical fiber acceleration sensor is realized by utilizing the coupling characteristics of the optical fiber collimator to incident light and the biaxial acceleration sensitive chip.
优选地，利用所述光纤准直器对入射光耦合特性和所述的单轴加速度敏感单元实现单轴光纤加速度传感器。Preferably, the single-axis fiber optic acceleration sensor is realized by utilizing the coupling characteristics of the fiber collimator to incident light and the single-axis acceleration sensitive unit.
优选地，所述的光纤准直器包括单光纤准直器或双光纤准直器。Preferably, the fiber collimator includes a single fiber collimator or a double fiber collimator.
优选地，所述单芯片双轴水平光纤加速度传感器还包括：形成在所述第一基底或所述第二基底的微机电器件。Preferably, the single-chip dual-axis horizontal optical fiber acceleration sensor further includes: a micro-electromechanical device formed on the first substrate or the second substrate.
更优选地，所述微机电器件包括加速度传感器、磁传感器、陀螺仪、压力传感器、湿度传感器、温度传感器、声传感器中的一种或多种。More preferably, the MEMS device includes one or more of an acceleration sensor, a magnetic sensor, a gyroscope, a pressure sensor, a humidity sensor, a temperature sensor, and an acoustic sensor.
为实现上述目的及其他相关目的，本发明提供一种单芯片双轴水平光纤加速度传感器的制备方法，所述单芯片双轴水平光纤加速度传感器的制备方法至少包括以下步骤：In order to achieve the above purpose and other related purposes, the present invention provides a method for preparing a single-chip dual-axis horizontal optical fiber acceleration sensor, the preparation method of the single-chip dual-axis horizontal optical fiber acceleration sensor at least includes the following steps:
提供第一基底，在所述第一基底表面深刻蚀，形成第一微反光镜扭转空间；A first substrate is provided, and the surface of the first substrate is deeply etched to form a first micromirror torsion space;
提供第二基底，在所述第二基底表面形成第二微反光镜扭转空间；A second substrate is provided, and a second micromirror twist space is formed on the surface of the second substrate;
将所述第一基底与第二基底键合，形成键合片；bonding the first substrate to the second substrate to form a bonding sheet;
在所述第一基底表面形成光高反射膜；forming a high light reflection film on the surface of the first substrate;
在所述第一基底上形成两个加速度敏感方向相互正交的单轴加速度敏感单元；forming two uniaxial acceleration sensing units whose acceleration sensing directions are orthogonal to each other on the first substrate;
对所述键合片划片，形成双轴加速度敏感芯片；通过封装管壳将所述双轴加速度敏感芯片和光纤准直器进行光学耦合封装，形成单芯片双轴水平光纤加速度传感器。The bonding sheet is diced to form a biaxial acceleration sensitive chip; the biaxial acceleration sensitive chip and the optical fiber collimator are optically coupled and packaged through a packaging shell to form a single chip biaxial horizontal optical fiber acceleration sensor.
优选地，所述光高反射附着在所述双轴加速度敏感单元上。Preferably, the light is highly reflective and attached to the biaxial acceleration sensitive unit.
优选地，采用基于微机电表面工艺技术或微机电体硅加工技术来进行各步骤。Preferably, each step is performed by adopting micro-electro-mechanical surface technology or micro-electro-mechanical silicon processing technology.
优选地，还包括步骤：在所述第一基底和所述第二基底上形成微机电器件。Preferably, the method further includes the step of forming micro-electromechanical devices on the first substrate and the second substrate.
如上所述，本发明的单芯片双轴水平光纤加速度传感器及其制备方法，具有以下有益效果：As mentioned above, the single-chip biaxial horizontal optical fiber acceleration sensor and its preparation method of the present invention have the following beneficial effects:
本发明的单芯片双轴水平光纤加速度传感器及其制备方法将两个敏感方向正交的单轴加速度敏感芯片集成在同一衬底上，且光信号的传输在双轴加速度敏感芯片一侧，大大简化了基于MEMS技术的单芯片双轴加速度传感器的封装。In the single-chip dual-axis horizontal optical fiber acceleration sensor and its preparation method of the present invention, two single-axis acceleration sensitive chips with orthogonal sensitive directions are integrated on the same substrate, and the transmission of optical signals is on the side of the dual-axis acceleration sensitive chip, greatly improving the performance of the sensor. The packaging of the single-chip dual-axis acceleration sensor based on MEMS technology is simplified.
附图说明Description of drawings
图1a～图1f显示为本发明的单芯片双轴水平光纤加速度传感器的制备方法流程示意图。1a to 1f are schematic flow charts showing the preparation method of the single-chip dual-axis horizontal optical fiber acceleration sensor of the present invention.
图2显示为本发明的单芯片双轴水平光纤加速度传感器的俯视图。Fig. 2 is a top view of the single-chip dual-axis horizontal optical fiber acceleration sensor of the present invention.
图3显示为本发明的单芯片双轴水平光纤加速度传感器的工作原理示意图。Fig. 3 is a schematic diagram showing the working principle of the single-chip dual-axis horizontal optical fiber acceleration sensor of the present invention.
元件标号说明Component designation description
11 光纤准直器11 Fiber collimator
111 光纤111 optical fiber
112 聚焦透镜112 Focusing lens
21 第一基底21 The first base
211 器件层211 Device layer
212 埋氧层212 buried oxide layer
213 衬底硅层213 Substrate silicon layer
22 单轴加速度敏感单元22 Single-axis acceleration sensor unit
221 弹性梁221 Elastic Beam
222 微反光镜222 micro-mirror
223 光高反射膜223 Light high reflective film
224 支撑框224 Support frame
23 第一微反光镜扭转空间23 The first micro-mirror to reverse the space
31 第二基底31 Second base
32 第二微反光镜扭转空间32 The second micro-mirror reverses the space
41 BCB胶41 BCB glue
51 双轴加速度敏感芯片51 Dual-axis acceleration sensor chip
61 封装管壳61 package package
具体实施方式Detailed ways
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
请参阅图1a～图3。需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。Please refer to Figures 1a to 3. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.
如图1a～图1f所示，本发明提供一种单芯片双轴水平光纤加速度传感器的制备方法，所述单芯片双轴水平光纤加速度传感器的制备方法至少包括以下步骤：As shown in Figures 1a to 1f, the present invention provides a method for preparing a single-chip dual-axis horizontal optical fiber acceleration sensor, the preparation method of the single-chip dual-axis horizontal optical fiber acceleration sensor at least includes the following steps:
步骤一：提供第一基底21，在所述第一基底21表面进行深刻蚀，形成第一微反光镜扭转空间23。Step 1: providing a first substrate 21 , performing deep etching on the surface of the first substrate 21 to form a first micromirror twist space 23 .
具体地，如图1a所示，在本实施例中，采用商用SOI硅片作为第一基底21，所述第一基底21包括器件层211，其厚度设定为30μm；埋氧层212，其厚度设定为2μm；衬底硅层213，其厚度设定为380μm；所述埋氧层212位于所述器件层211及所述衬底硅层213之间。在所述衬底硅层213上涂厚光刻胶，光刻显影之后刻蚀所述衬底硅层213直至露出所述埋氧层212，在本实施例中，采用深反应离子刻蚀(DRIE)对所述衬底硅层213进行刻蚀。利用浓硫酸去除光刻胶，再利用BOE溶液中去除外露的所述埋氧层212，形成第一微反光镜扭转空间23。Specifically, as shown in FIG. 1a, in this embodiment, a commercial SOI silicon wafer is used as the first substrate 21, and the first substrate 21 includes a device layer 211 whose thickness is set to 30 μm; a buried oxide layer 212 whose The thickness is set to 2 μm; the thickness of the substrate silicon layer 213 is set to 380 μm; the buried oxide layer 212 is located between the device layer 211 and the substrate silicon layer 213 . Thick photoresist is coated on the silicon substrate layer 213, and the silicon substrate layer 213 is etched until the buried oxide layer 212 is exposed after photolithography development. In this embodiment, deep reactive ion etching (DRIE) is used. The substrate silicon layer 213 is etched. Use concentrated sulfuric acid to remove the photoresist, and then use BOE solution to remove the exposed buried oxide layer 212 to form the first micro-mirror torsion space 23 .
步骤二：提供第二基底31，在所述第二基底31表面形成第二微反光镜扭转空间32。Step 2: providing a second substrate 31 , and forming a second micromirror twisting space 32 on the surface of the second substrate 31 .
具体地，如图1b所示，在本实施例中，采用商用双抛硅片作为第二基底31，通过热氧化在所述第二基底31的表面生长厚度为的SiO2，光刻并用BOE溶液图形化所述第二基底31上生长的SiO2，采用浓硫酸去除光刻胶，放入40℃、浓度为40％的KOH溶液中腐蚀，形成所述第二微反光镜的扭转的空间32，其深度约为60μm。Specifically, as shown in FIG. 1b, in this embodiment, a commercial double-polished silicon wafer is used as the second substrate 31, and the thickness of the second substrate 31 grown on the surface of the second substrate 31 by thermal oxidation is SiO 2 , photolithography and use BOE solution to pattern the SiO 2 grown on the second substrate 31, use concentrated sulfuric acid to remove the photoresist, put it into 40°C and 40% KOH solution for etching, and form the second substrate 31. The depth of the twisted space 32 of the two micromirrors is about 60 μm.
步骤三：将所述第一基底21与第二基底31键合，形成键合片。Step 3: Bonding the first substrate 21 and the second substrate 31 to form a bonding sheet.
具体地，如图1c所示，在本实施例中，用旋转涂胶机在所述第二基底31形成所述第二微反光镜的扭转的空间32的表面涂BCB胶41，其厚度设定为9μm，将涂有BCB胶41的第二基底31与所述第一基底21形成所述第一微反光镜的扭转的空间31的表面预对准并键合。Specifically, as shown in FIG. 1c, in this embodiment, a BCB glue 41 is coated on the surface of the second substrate 31 to form the twisted space 32 of the second micro-mirror with a thickness of Set at 9 μm, the second substrate 31 coated with BCB glue 41 and the surface of the first substrate 21 forming the twisted space 31 of the first micromirror are pre-aligned and bonded.
步骤四：在所述第一基底21表面形成光高反射膜223。Step 4: forming a light high reflection film 223 on the surface of the first substrate 21 .
具体地，如图1d所示，在本实施例中，在第一基底21的表面上通过磁控溅射沉积金属薄膜TiW/Au，其厚度设定为光刻显影，分别用Au腐蚀液和TiW腐蚀液图形化金属薄膜得到所述光高反射膜223。Specifically, as shown in FIG. 1d, in this embodiment, a metal film TiW/Au is deposited on the surface of the first substrate 21 by magnetron sputtering, and its thickness is set to Photolithographic development, using Au etching solution and TiW etching solution to pattern the metal thin film respectively to obtain the optical high reflection film 223 .
步骤五：在所述第一基底21上形成两个加速度敏感方向相互正交的单轴加速度敏感单元22。Step 5: Form two uniaxial acceleration sensing units 22 whose acceleration sensing directions are orthogonal to each other on the first substrate 21 .
具体地，如图1e所示，在本实施例中，在所述第一基底21上涂光刻胶，相对于所述光高反射膜223的位置曝光显影，通过深反应离子刻蚀(DRIE)，形成两个敏感方向相互正交的单轴加速度敏感单元22。Specifically, as shown in FIG. 1e, in this embodiment, a photoresist is coated on the first substrate 21, exposed and developed relative to the position of the high-reflection film 223, and then processed by deep reactive ion etching (DRIE ), forming two uniaxial acceleration sensing units 22 whose sensing directions are orthogonal to each other.
步骤六：对所述键合片划片，形成双轴加速度敏感芯片；通过封装管壳将所述双轴加速度敏感芯片和光纤准直器进行光学耦合封装，形成单芯片双轴水平光纤加速度传感器。Step 6: Scribing the bonding sheet to form a biaxial acceleration sensitive chip; optically coupling and packaging the biaxial acceleration sensitive chip and the optical fiber collimator through a packaging package to form a single chip biaxial horizontal optical fiber acceleration sensor .
具体地，在本实施例中，用划片机将结构释放的键合片划片，形成如图1e所示的双轴加速度敏感芯片51。如图1f所示，用环氧树脂将所述双轴加速度敏感芯片51焊接在封装管壳61的基座上，用光学调节架依次将光纤准直器11和所述双轴角速度敏感芯片51封装在一起。Specifically, in this embodiment, a dicing machine is used to scribe the bonded sheet released from the structure to form a biaxial acceleration sensitive chip 51 as shown in FIG. 1e. As shown in Figure 1f, the biaxial acceleration sensitive chip 51 is welded on the base of the packaging tube shell 61 with epoxy resin, and the optical fiber collimator 11 and the biaxial angular velocity sensitive chip 51 are sequentially connected by an optical adjustment frame. Packaged together.
在步骤五之后，还可在所述第一基底21或第二基底31上形成微机电器件。所述微机电器件加速度计、陀螺仪、压力传感器、湿度传感器、温度传感器、及声传感器等。After step five, micro-electromechanical devices can also be formed on the first substrate 21 or the second substrate 31 . The MEMS accelerometer, gyroscope, pressure sensor, humidity sensor, temperature sensor, and acoustic sensor etc.
可采用基于微机电表面工艺技术或微机电体硅加工技术来制备本发明的单芯片双轴水平光纤加速度传感器，在此不再予以详述。The single-chip dual-axis horizontal optical fiber acceleration sensor of the present invention can be prepared by MEMS surface technology or MEMS bulk silicon processing technology, which will not be described in detail here.
如图1a至1f所示，上述制备方法形成的基于MEMS的技术单芯片双轴水平光纤加速度传感器至少包括：As shown in Figures 1a to 1f, the MEMS-based technical single-chip biaxial horizontal optical fiber acceleration sensor formed by the above preparation method at least includes:
第一基底21，用于形成具有两个单轴加速度敏感单元22的双轴加速度敏感芯片51，如图2所示为本发明的单芯片双轴水平光纤加速度传感器的俯视图，两个单轴加速度敏感单元22的敏感方向正交；所述单轴加速度敏感单元22包括微反光镜222、弹性梁221以及光高反射膜223，所述微反光镜222由所述弹性梁221支撑，所述弹性梁221的两端分别与所述微反光镜222和支撑框224连接，所述光高反射膜223附着在所述微反光镜222上；The first substrate 21 is used to form a biaxial acceleration sensitive chip 51 with two uniaxial acceleration sensitive units 22. As shown in FIG. The sensitive direction of the sensitive unit 22 is orthogonal; the uniaxial acceleration sensitive unit 22 includes a micro-mirror 222, an elastic beam 221 and a light high reflection film 223, the micro-mirror 222 is supported by the elastic beam 221, and the elastic The two ends of the beam 221 are respectively connected to the micro-mirror 222 and the support frame 224, and the optical high reflection film 223 is attached to the micro-mirror 222;
第二基底31，位于所述第一基底21的下方，作为晶圆级封装；The second substrate 31, located below the first substrate 21, serves as a wafer-level package;
以及光纤准直器11，与所述第一基底21及所述第二基底31通过同一封装管壳61封装。And the fiber collimator 11 is packaged together with the first substrate 21 and the second substrate 31 through the same packaging shell 61 .
所述单芯片双轴水平光纤加速度传感器由所述双轴加速度敏感芯片51，所述光纤准直器11和所述封装管壳61三部分组成。所述双轴加速度敏感芯片51包括两个单轴加速度敏感单元22。所述单轴加速度敏感单元22由所述微反光镜222、所述弹性梁221和所述光高反射膜223构成。所述微反光镜222的重心位于所述弹性梁221轴线的正下方、并在经过所述弹性梁221轴线且与所述微反光镜222的镜面垂直的平面内，保证了所述单轴加速度敏感单元22仅对平面内一方向的加速度信号敏感。The single-chip biaxial horizontal optical fiber acceleration sensor is composed of the biaxial acceleration sensitive chip 51 , the optical fiber collimator 11 and the packaging package 61 . The biaxial acceleration sensing chip 51 includes two uniaxial acceleration sensing units 22 . The uniaxial acceleration sensing unit 22 is composed of the micro-mirror 222 , the elastic beam 221 and the optical high reflection film 223 . The center of gravity of the micro-mirror 222 is located directly below the axis of the elastic beam 221, and in a plane passing through the axis of the elastic beam 221 and perpendicular to the mirror surface of the micro-mirror 222, ensuring the uniaxial acceleration The sensitive unit 22 is only sensitive to the acceleration signal in one direction in the plane.
所述双轴加速度敏感芯片51的对加速度的敏感方向与所述的双轴加速度敏感芯片51平面平行。所述两个单轴加速度敏感单元22的敏感方向正交。所述的双轴加速度敏感芯片51将水平方向的加速度转化为所述微反光镜222的扭转角。The direction sensitive to acceleration of the biaxial acceleration sensitive chip 51 is parallel to the plane of the biaxial acceleration sensitive chip 51 . The sensing directions of the two uniaxial acceleration sensing units 22 are orthogonal. The biaxial acceleration sensitive chip 51 converts the acceleration in the horizontal direction into the twist angle of the micro mirror 222 .
在本实施例中，所述单芯片双轴水平光纤加速度传感器包括两个光纤准直器11，位于所述双轴加速度敏感芯片51的同一侧。所述的光纤准直器包括单光纤准直器、双光纤准直器。在本实施例中，所述光纤准直器11包括光纤111以及聚焦透镜112。In this embodiment, the single-chip dual-axis horizontal optical fiber acceleration sensor includes two optical fiber collimators 11 located on the same side of the dual-axis acceleration sensitive chip 51 . The fiber collimator includes a single fiber collimator and a double fiber collimator. In this embodiment, the fiber collimator 11 includes an optical fiber 111 and a focusing lens 112 .
利用所述光纤准直器11对入射光耦合特性和所述双轴加速度敏感芯片51实现单芯片双轴水平光纤加速度传感器。A single-chip dual-axis horizontal optical fiber acceleration sensor is realized by utilizing the coupling characteristics of the optical fiber collimator 11 to the incident light and the biaxial acceleration sensitive chip 51 .
利用所述光纤准直器11对入射光耦合特性和所述的单轴加速度敏感单元22实现单轴光纤加速度传感器。A single-axis fiber optic acceleration sensor is realized by utilizing the fiber collimator 11 to the incident light coupling characteristics and the single-axis acceleration sensitive unit 22 .
所述单芯片双轴水平光纤加速度传感器还包括：形成在所述第一基底21或所述第二基底31的微机电器件。所述微机电器件包括加速度传感器、磁传感器、陀螺仪、压力传感器、湿度传感器、温度传感器、声传感器中的一种或多种。The single-chip dual-axis horizontal optical fiber acceleration sensor further includes: a micro-electromechanical device formed on the first substrate 21 or the second substrate 31 . The MEMS device includes one or more of an acceleration sensor, a magnetic sensor, a gyroscope, a pressure sensor, a humidity sensor, a temperature sensor, and an acoustic sensor.
上述基于MEMS的技术单芯片双轴水平光纤加速度传感器原理如图3所示：所述单轴加速度敏感芯片22在敏感方向加速度作用下，所述微反光镜222会受到惯性力矩的作用，该力矩驱动所述微反光镜222扭转，产生的扭转角度θ与加速度信号成正比。从而了实现平面内一方向的加速度信号与所述微反光镜222扭转角度θ的转换。所述微反光镜222的扭转角度的检测采用所述光纤准直器11进行，所述光纤准直器11将所述光纤111的出射光斑进行扩束，对入射光的入射角度具有很高的敏感性。所述光纤准直器11出射的光信号经所述微反光镜222反射偏转，光信号再次耦合到所述光纤准直器11。在敏感方向加速度作用下，所述微反光镜222产生角度扭转θ，引起反射光信号的反射角变化，导致耦合回所述光纤准直器11的光耦合效率的急剧改变，探测耦合光强变化就能检测到敏感方向的加速度信号。The above MEMS-based technical single-chip dual-axis horizontal optical fiber acceleration sensor principle is shown in Figure 3: the single-axis acceleration sensitive chip 22 is under the action of acceleration in the sensitive direction, and the micro-mirror 222 will be affected by the moment of inertia. Driving the micro-mirror 222 to twist, the generated twist angle θ is proportional to the acceleration signal. Thus, the conversion between the acceleration signal in one direction in the plane and the twist angle θ of the micro-mirror 222 is realized. The detection of the torsion angle of the micromirror 222 is carried out by the fiber collimator 11, and the fiber collimator 11 expands the outgoing light spot of the optical fiber 111, and has a high degree of incidence angle of the incident light. sensitivity. The optical signal emitted by the fiber collimator 11 is reflected and deflected by the micro-mirror 222 , and the optical signal is coupled to the fiber collimator 11 again. Under the action of acceleration in the sensitive direction, the micro-mirror 222 produces an angular twist θ, which causes a change in the reflection angle of the reflected light signal, resulting in a sharp change in the optical coupling efficiency coupled back to the fiber collimator 11, and detects the change in the coupling light intensity The acceleration signal in the sensitive direction can be detected.
本发明集成了MEMS微制造技术和光纤检测技术，因而其具有MEMS微制造技术的体积小、重量轻、批量化生产和光纤检测技术的高灵敏度，高频响应，无源，抗电磁干扰特性。由于光信号的输入和输出在双轴加速度敏感芯片的一测，且只需两支光纤准直器就可实现双轴加速度敏感芯片的光信号的传输，因而不仅简化了芯片的封装而且也减小了芯片封装成本和体积。本发明的单芯片双轴加速度敏感芯片可以和我们已经实现的垂直轴加速度传感器集成，实现单芯片三轴光纤加速度传感器。The invention integrates MEMS micro-manufacturing technology and optical fiber detection technology, so it has the characteristics of small volume, light weight, mass production of MEMS micro-manufacturing technology and high sensitivity, high-frequency response, passive and anti-electromagnetic interference of optical fiber detection technology. Since the input and output of the optical signal are on the side of the biaxial acceleration sensitive chip, and only two fiber collimators are needed to realize the transmission of the optical signal of the biaxial acceleration sensitive chip, it not only simplifies the packaging of the chip but also reduces the The cost and volume of chip packaging are reduced. The single-chip dual-axis acceleration sensitive chip of the present invention can be integrated with the vertical-axis acceleration sensor that we have realized to realize a single-chip three-axis optical fiber acceleration sensor.
综上所述，本发明提供一种单芯片双轴水平光纤加速度传感器，至少包括：第一基底，用于形成具有两个单轴加速度敏感单元的双轴加速度敏感芯片；所述单轴加速度敏感单元包含微反光镜、弹性梁以及光高反射膜，所述微反光镜由所述弹性梁支撑，所述弹性梁的两端分别与所述微反光镜和支撑框连接，所述光高反射膜附着在所述微反光镜上；第二基底，位于所述第一基底的下方，作为晶圆级封装；以及光纤准直器，与所述第一基底及所述第二基底通过同一封装管壳封装。本发明提供其制备方法，包括：提供第一基底，在所述第一基底表面进行深刻蚀，形成第一微反光镜扭转空间；提供第二基底，在所述第二基底表面形成第二微反光镜扭转空间；将所述第一基底与第二基底键合，形成键合片；在所述第一基底表面形成光高反射膜；在所述第一基底上形成两个加速度敏感方向相互正交的单轴加速度敏感单元；对所述键合片划片，形成双轴加速度敏感芯片；通过封装管壳将所述双轴加速度敏感芯片和光纤准直器进行光学耦合封装，形成单芯片双轴水平光纤加速度传感器。本发明的单芯片双轴水平光纤加速度传感器及其制备方法将两个敏感方向正交的单轴加速度敏感芯片集成在同一衬底上，且光信号的传输在双轴加速度敏感芯片一侧，大大简化了基于MEMS技术的单芯片双轴加速度传感器的封装。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。In summary, the present invention provides a single-chip dual-axis horizontal optical fiber acceleration sensor, which at least includes: a first substrate for forming a dual-axis acceleration sensitive chip with two uniaxial acceleration sensitive units; the uniaxial acceleration sensor The unit includes a micro-mirror, an elastic beam, and a high-light reflective film, the micro-mirror is supported by the elastic beam, and the two ends of the elastic beam are respectively connected with the micro-mirror and the support frame, and the light is highly reflective a film attached to the micromirror; a second substrate, located below the first substrate, as a wafer-level package; and a fiber collimator, passed through the same package as the first substrate and the second substrate Packaged in a tube. The invention provides its preparation method, including: providing a first substrate, performing deep etching on the surface of the first substrate to form a first micromirror twist space; providing a second substrate, forming a second micromirror on the surface of the second substrate The reflective mirror twists the space; the first substrate and the second substrate are bonded to form a bonding sheet; a high-reflection film is formed on the surface of the first substrate; two acceleration-sensitive directions are formed on the first substrate Orthogonal uniaxial acceleration sensitive unit; scribing the bonding sheet to form a biaxial acceleration sensitive chip; optically coupling and packaging the biaxial acceleration sensitive chip and fiber collimator through a packaging package to form a single chip Dual axis horizontal fiber optic acceleration sensor. In the single-chip dual-axis horizontal optical fiber acceleration sensor and its preparation method of the present invention, two single-axis acceleration sensitive chips with orthogonal sensitive directions are integrated on the same substrate, and the transmission of optical signals is on the side of the dual-axis acceleration sensitive chip, greatly improving the performance of the sensor. The packaging of the single-chip dual-axis acceleration sensor based on MEMS technology is simplified. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.
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| CN113311189A (en) * | 2021-05-25 | 2021-08-27 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
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| CN115728512B (en) * | 2021-08-25 | 2024-02-27 | 上海拜安传感技术有限公司 | Optical fiber acceleration sensor and method for forming optical fiber acceleration sensor |
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| CN113823626B (en) * | 2021-09-23 | 2023-10-31 | 华东光电集成器件研究所 | Acceleration value recording device for penetration measurement based on fan-out technology |
| CN114236683A (en) * | 2021-12-23 | 2022-03-25 | 欧梯恩智能科技(苏州)有限公司 | Self-coupling photon acceleration sensor chip and manufacturing method thereof |
| CN118746698A (en) * | 2024-06-28 | 2024-10-08 | 深圳瑞纳电子技术发展有限公司 | Photoelectric induction acceleration sensor and manufacturing method thereof |
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