CN110208576A - A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula - Google Patents
A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula Download PDFInfo
- Publication number
- CN110208576A CN110208576A CN201910527294.6A CN201910527294A CN110208576A CN 110208576 A CN110208576 A CN 110208576A CN 201910527294 A CN201910527294 A CN 201910527294A CN 110208576 A CN110208576 A CN 110208576A
- Authority
- CN
- China
- Prior art keywords
- mass block
- diffraction grating
- grating
- cantilever beam
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means
Abstract
The present invention relates to a kind of micro-acceleration sensors that can be changed diffraction grating with period stretch formula, including pedestal, the cantilever beam being fixedly connected with pedestal, the mass block being fixedly connected with the free end of cantilever beam and measuring mechanism for measuring cantilever Liang Sicheng, measuring mechanism includes the laser and photodetector that the period stretch formula that connect respectively with pedestal and mass block of both ends can be changed diffraction grating and be fixed on pedestal；Laser and photodetector, which are respectively placed in period stretch formula, can be changed the two sides of diffraction grating.Compared with prior art, the present invention using period stretch formula can be changed diffraction grating measure object acceleration, using optical grating error average effect the characteristics of, have many advantages, such as measurement accuracy height, fast response time, measurement efficiently, more easily measure precision vibration.
Description
Technical field
The present invention relates to micro-optical device technical fields, can be changed diffraction grating with period stretch formula more particularly, to a kind of
Micro-acceleration sensor.
Background technique
In recent years, silicon micro-acceleration sensor serves not only as a developing direction of MEMS technology, obtains in life
Many applications, and the research of the MOEMS acceleration transducer combined with MEMS technology in the high-precision of optical measurement also at
For an important research direction.Wherein, can be changed diffraction grating micro-acceleration sensor can measure object with high measurement accuracy
Body acceleration, be not only applicable to navigation inertia system in, while automobile safety system, mine locating survey shake, robotary control,
Biologic medical etc. is widely applied.Typical silicon micro-acceleration sensor, working principle are based on mechanical oscillation, utilize
The system of mass block and elastic element composition experiences object acceleration, when object has acceleration, elastic element bending, and mass block
Micro-displacement is generated, acceleration can be calculated by Newton's second law.Detection sensitivity and reliability are the important of sensor
Index, current silicon micro-acceleration sensor are normally based on piezoelectric effect and measure, and the measurement accuracy of the measuring mechanism is not
Height, and sensitivity is lower, and when acceleration is smaller, the displacement of mass block is smaller, then existing MEMS technology is unable to measure.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of band period stretch formulas
The micro-acceleration sensor of variable diffraction grating.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula, including pedestal, be fixedly connected with pedestal
Cantilever beam, the mass block that is fixedly connected with the free end of the cantilever beam and the survey for measuring the cantilever Liang Sicheng
Measuring mechanism, the measuring mechanism include the variable diffraction light of period stretch formula that both ends are connect with the pedestal and mass block respectively
Grid and the laser and photodetector being fixed on the pedestal；The laser and photodetector are respectively placed in institute
Stating period stretch formula can be changed the two sides of diffraction grating.
The iris shutter acceleration transducer that grating in compared with the prior art vertically moves, this iris shutter accelerate
Spending sensor includes that recess floor and rectangle mass block are formed under it, is stained with cantilever beam at an upper portion thereof, can vertically move up and down
Dynamic grating is fixed on above mass block, and light source and photodetector are placed in above grating, the iris shutter acceleration transducer
Packaging technology be based on LED packaging technology.Compared with the iris shutter acceleration transducer, the present invention is using change screen periods
Projection-type grating, can preferably sense the displacement of mass block.Change between grating and light source in compared with the prior art
The scheme of distance, the present invention in screen periods variation bring diffraction pattern information change it is bigger, sensitivity is higher.
It includes several parallel gratings disposed in parallel, adjacent parallel grating that the period stretch formula, which can be changed diffraction grating,
It is connected by spring；And it is connect by grating handle with the mass block close to the end spring of the mass block.
The raster pitch of the parallel grating is 0.05~0.5mm, preferably 0.2nm.
A length of 5~15mm of the parallel grating, preferably 10mm；Width is 2~12mm, preferably 6mm.
Present invention optimizes the structural parameters of parallel grating, select the biggish coarse grating of raster pitch, facilitate optical diffraction,
Range is expanded, the object of high degree of motion can be measured.Meanwhile the sensor bulk is small, light-weight, integrated level is high, response speed
Degree is fast, high sensitivity, and structure is dexterous.Secondly, the sensor driving voltage is low, low energy consumption.Finally, the sensor is at low cost, according to
Rely in mature silicon processing technique, it can be achieved that batch production.
The parallel grating that the present invention is prepared, when object acceleration direction is upward, mass block direction of displacement is downward, light
Grid spacing increases with the increase of acceleration；When object acceleration direction is downward, mass block direction of displacement is upward, between grating
Reduce away from the reduction with acceleration；That is the displacement of mass block can change the period of parallel grating, and diffraction pattern becomes
Change, detects diffraction intensity using photodetector, by the signal processing of amplifying circuit, thus the information being displaced, into one
Pacing obtains the value of acceleration.
The present invention can be changed diffraction grating to period stretch formula and be improved, several parallel gratings be arranged, and parallel
Grating by spring connect, by object apply acceleration, mass block generate displacement be applied on parallel grating, spring by
Power, which generates deformation, can more easily change screen periods, and elastic deformation can restore.Since grating periodic changes,
This variation is received by a photoelectric detector by diffraction pattern, changes obvious, high sensitivity.Meanwhile the mistake that diffraction grating has
Measurement accuracy can be improved in poor average effect, this is that common MEMS device is incomparable.
The preparation method of the parallel grating is the following steps are included: provide a silicon chip；Pass through on the silicon chip
SiO2Sedimentation prepares SiO2Film；In SiO2Highly viscous positive photoresist is coated on film；Using ultraviolet exposure equipment into
Sample, is then placed in developer solution and develops by row lithography operations；SiO is etched using reactive ion etching method2Film；Using depth
Reactive ion etching method performs etching sample, until engraved structure occur in sample surfaces, obtains the parallel grating.
The silicon chip with a thickness of 0.1~0.5mm, preferably 0.2mm；The SiO2Film with a thickness of 300~
1000nm, preferably 500nm；The coating thickness of the positive photoresist is 1500~3500nm, preferably 2500nm；It is described aobvious
Shadow liquid is NMD-3 developing solution；Etching liquid used in the reactive ion etching method is hydrofluoric acid solution；The deep reaction
Etching gas used in ion etching method is SF6And C4F8Admixture of gas.
The silicon chip is n-type silicon wafer.
The preparation method of the cantilever beam: the cantilever beam SOI Substrate for being used for photoetching treatment is provided, in the cantilever beam SOI
Spin coating photoresist on substrate；Using cantilever beam structure mask plate, using photoetching and developing technique by designed mask plate structure
Pattern shifts on the cantilever beam SOI Substrate surface of mask plate；Cantilever beam SOI Substrate is performed etching with ICP lithographic technique, is obtained
The cantilever beam.
The mass block the preparation method comprises the following steps: provide be used for photoetching treatment mass block SOI Substrate, in the mass block
Spin coating photoresist on SOI Substrate；The quality mask plates of photoetching treatment are ready for, by the quality mask plates and cantilever
Alignment mark alignment on beam mask plate, is shifted designed mass block mask plate structure pattern using photoetching and developing technique
On the mass block SOI Substrate surface of mask plate；Mass block SOI Substrate is performed etching with ICP lithographic technique；With wet etching work
The buried oxide layer of skill etching mass block SOI Substrate obtains the mass block.
There are two the cantilever beam is set, it is respectively arranged at the two sides of the mass block.
Measuring principle of the invention are as follows: emitted beam using laser, by the diffraction pattern formed after grating, work as object
When with acceleration, elastic element bending, mass block is displaced, and screen periods change, and diffraction pattern angle generates variation, by
The output intensity that detector receives changes, then by obtaining mass block displacement information, i.e., after amplifying circuit signal processing
Object acceleration information can be obtained.
Compared with prior art, the invention has the following advantages that
(1) based on the error average effect of grating, measurement accuracy of the invention is higher than traditional MEMS acceleration transducer very
It is more, it is based on diffraction pattern light intensity measure of the change, response speed is higher；Can it is more efficient, be easier measurement precision vibration；
(2) overall structure of the invention combines compact, and small in size, the processing is simple, and installation is facilitated to fix.
(3) processing method of parallel grating and cantilever beam and mass block is simple in the present invention, is very suitable to integrated production.
(4) present invention can apply in the fields such as space flight and aviation, biologic medical, Internet of Things, be widely used.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the structural schematic diagram that period stretch formula can be changed diffraction grating in the present invention；
Fig. 3 is the structural schematic diagram of parallel grating in the present invention；
In figure, 1 is laser, and 2 can be changed diffraction grating for period stretch formula, and 3 be photodetector, and 4 be cantilever beam, and 5 are
Mass block, 6 be pedestal, and 21 be parallel grating, and 22 be spring, and 23 be grating handle, and 7 be silicon chip, and 8 be SiO2Film, 9 are positive
Property photoresist film.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
Embodiment 1
A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula, as shown in Figure 1, including pedestal 6 and base
Cantilever beam 4 that seat 6 is fixedly connected, the mass block 5 that is fixedly connected with the free end of cantilever beam 4 and for measuring cantilever beam 4
The measuring mechanism of shifting, wherein measuring mechanism, which includes that the period stretch formula that connect respectively with pedestal 6 and mass block 5 of both ends is variable, to spread out
The laser 1 and photodetector 3 penetrating grating 2 and being fixed on pedestal 6；Laser 1 and photodetector 3 are respectively placed in
Period stretch formula can be changed the two sides of diffraction grating 2, there are two cantilever beam 4 is set, be respectively arranged at the two sides of mass block 5, the period stretches
Contracting formula, which can be changed diffraction grating 2, cantilever beam 4, mass block 5, is processed with silicon materials.
In the present embodiment, it includes several parallel gratings 21 disposed in parallel that period stretch formula, which can be changed diffraction grating 2, adjacent
Parallel grating 21 connected by spring 22；And the spring 22 for being located at end is connect by grating handle 23 with mass block 5, such as
Shown in Fig. 2；Parallel grating 21 is transmission-type, raster pitch 0.2nm；By pulling or pushing the grating being connected with mass block
Handle can expand or shrink screen periods, in order to measure swiftly passing object, devise relatively large grid spacing；For
The fragility for preventing grating, the thickness design by the etching silicon wafer for making grating is 0.2mm；When incident light is approximately perpendicular to light
When grid stroke in grid plane, the structure with coarse grating line will be helpful to effectively diffraction light.The size of parallel grating 21 is
10mm×6mm.The material of grating handle 23 is silicon, is a rectangular parallelepiped structure with cavity.
It is to pass through photoelectricity using photodetector 3 as sensing element, impression and transmitting acceleration information in the present embodiment
Detector 3 detects the variation of diffraction pattern light intensity, obtains the size of object acceleration.Whole process completely can be by being based on
Semiconductor silicon material micro manufacturing method makes.
When applying acceleration to object, the inertia of generation makes the pedestal of mass block and acceleration transducer generate opposite position
It moves, cantilever beam deflection, the grating handle being connected with mass block is subjected to displacement, and the size of displacement and the size of acceleration have direct pass
System.When object acceleration direction is upward, mass block direction of displacement is downward, and grating space increases with the increase of acceleration；
When object acceleration direction is downward, mass block direction of displacement is upward, and grating space reduces with the reduction of acceleration.So
The variation of diffraction intensity caused by acceleration can be changed by grating space accurately measures.The present embodiment is by Period-variable Grating
Spacing changes and laser is changed to the luminous flux of photodetector.
The preparation method of the present embodiment includes the manufacture respectively of parallel grating 21, cantilever beam 4 and mass block 5, then with phase
It closes components to be assembled, can be realized and be connected by glue dispensing and packaging between three.
In this implementation, the preparation method of parallel grating 21 includes the following steps, as shown in figure 3, the parallel grating is with one
Mask manufacture；One silicon chip 7 is provided, silicon chip 7 with a thickness of 0.2mm, using 100 chip of N-shaped；Pass through on silicon chip 7
SiO2Sedimentation prepares the SiO of 500nm thickness2Film 8, a structure formed such as the silicon wafer in Fig. 3 through peroxidating；In SiO2Film 8
The upper highly viscous positive photoresist (OFPR-800,450cp) of coating forms positive-tone photo glue film 9, and the coating of positive photoresist is thick
Degree is 2500nm；Lithography operations are carried out using ultraviolet exposure equipment (Kall Suss, MA-8), sample is then placed in development
Develop in liquid, the figure for the mask plate out of developing in NMD-3 developer solution, as in Fig. 3 silicon wafer by first time photoetching and etching shape
At b structure；SiO is etched using reactive ion etching method2Film 8, specially HF solution etches SiO2, such as the c structure in Fig. 3；
Sample is performed etching using deep reaction ion etching method, until engraved structure occur in sample surfaces, obtains parallel grating 21,
Such as the d structure in Fig. 3, etching gas used in deep reaction ion etching method is SF6And C4F8Admixture of gas.
The preparation method of cantilever beam 4: firstly, the cantilever beam SOI Substrate for being used for photoetching treatment is provided, to cantilever beam SOI base
Piece carries out cleaning preliminary drying and spin coating photoresist, spin coating revolving speed 3000rad/s, spin coating time 45s, and 3 μm of bondline thickness；Secondly, quasi-
It is ready for the mask plate of photoetching treatment, is shifted designed mask plate structure pattern in mask using photoetching and developing technique
The cantilever beam SOI Substrate surface of plate；Finally, being performed etching with ICP technique to cantilever beam SOI Substrate, etch rate is about 0.8 μ
M/min, etch period about 13min.
Mass block 5 the preparation method comprises the following steps: firstly, provide be used for photoetching treatment mass block SOI Substrate, to mass block SOI
Substrate carries out cleaning preliminary drying and spin coating photoresist, spin coating revolving speed 3000rad/s, spin coating time 45s, and 3 μm of bondline thickness；Secondly,
It is ready for the mask plate of photoetching treatment, the alignment mark of the mask plate of the mask plate and cantilever beam of mass block utilizes
Photoetching and developing technique shift designed mask plate structure pattern on the mass block SOI Substrate surface of mask plate；Then, it uses
ICP technique performs etching mass block SOI Substrate, and etch rate is about 0.8 μm/min, etch period about 50min；Finally, with
Wet corrosion technique etches buried oxide layer, and etching solution is ammonium fluoride 6g (3ml), and deionized water 9ml, etch period is about 10min.
The sensing element that the period stretch formula of the present embodiment production can be changed diffraction grating micro-acceleration sensor is that photoelectricity is visited
Device is surveyed, using the change in displacement of new method measurement mass block, is suitble to height accurately acceleration analysis, and preparation method base
In the processing method of silicon technology, it is very suitable for integrated be fabricated to and makes different types of MOEMS acceleration transducer.Due to light
The error average effect of grid, measurement accuracy is more much higher than traditional MEMS acceleration transducer, and we are for iris shutter
It is made that structure innovation；The present embodiment can be applied to the fields such as space flight and aviation, biologic medical, Internet of Things.In short, the sensor
It is good research direction in conjunction with the high-precision of optical device better than traditional silicon micro-sensor.
Embodiment 2
The present embodiment is a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula, main structure and reality
The structure for applying example 1 is identical, the difference is that the structural parameters of parallel grating 21, the raster pitch of parallel grating 21 are
0.05mm；The length is 5mm, width 2mm.
The specific process parameter for preparing parallel grating 21 is different, specifically:
One mask manufacture of the parallel grating；One silicon chip 7 is provided, silicon chip 7 with a thickness of 0.1mm, using N-shaped
100 chips；Pass through SiO on silicon chip 72Sedimentation prepares the SiO of 300nm thickness2Film 8；In SiO2It is coated on film 8 high viscous
The positive photoresist (OFPR-800,450cp) of degree forms positive-tone photo glue film 9, and the coating thickness of positive photoresist is 1500nm；
Lithography operations are carried out using ultraviolet exposure equipment (Kall Suss, MA-8), then sample is placed in developer solution and is developed,
Develop the figure of mask plate out in NMD-3 developer solution；SiO is etched using reactive ion etching method2Film 8, specially HF solution
Etch SiO2；Sample is performed etching using deep reaction ion etching method, until engraved structure occur in sample surfaces, is put down
Line raster 21, etching gas used in deep reaction ion etching method are SF6And C4F8Admixture of gas.
Embodiment 3
The present embodiment is a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula, main structure and reality
The structure for applying example 1 is identical, the difference is that the structural parameters of parallel grating 21, the raster pitch of parallel grating 21 is 0.5mm；
The length is 15mm, width 12mm.
The specific process parameter for preparing parallel grating 21 is different, specifically:
One mask manufacture of the parallel grating；One silicon chip 7 is provided, silicon chip 7 with a thickness of 0.5mm, using N-shaped
100 chips；Pass through SiO on silicon chip 72Sedimentation prepares the SiO of 1000nm thickness2Film 8；In SiO2It is coated on film 8 high viscous
The positive photoresist (OFPR-800,450cp) of degree forms positive-tone photo glue film 9, and the coating thickness of positive photoresist is 3500m；
Lithography operations are carried out using ultraviolet exposure equipment (Kall Suss, MA-8), then sample is placed in developer solution and is developed,
Develop the figure of mask plate out in NMD-3 developer solution；SiO is etched using reactive ion etching method2Film 8, specially HF solution
Etch SiO2；Sample is performed etching using deep reaction ion etching method, until engraved structure occur in sample surfaces, is put down
Line raster 21, etching gas used in deep reaction ion etching method are SF6And C4F8Admixture of gas.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (10)
1. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula, including pedestal (6) and the pedestal (6)
The cantilever beam (4) that is fixedly connected, the mass block (5) being fixedly connected with the free end of the cantilever beam (4) and for measuring
State the measuring mechanism of cantilever beam (4) displacement, which is characterized in that
The measurement structure includes the variable diffraction of period stretch formula that both ends are connect with the pedestal (6) and mass block (5) respectively
Grating (2) and the laser (1) and photodetector (3) being fixed on the pedestal (6)；The laser (1) and photoelectricity
Detector (3), which is respectively placed in the period stretch formula, can be changed the two sides of diffraction grating (2).
2. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 1, feature
It is, it includes several parallel gratings (21) disposed in parallel that the period stretch formula, which can be changed diffraction grating (2), and adjacent is parallel
Grating (21) is connected by spring (22)；And pass through grating handle (23) close to the end spring (22) of the mass block (5)
It is connect with the mass block (5).
3. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 2, feature
It is, the raster pitch of the parallel grating (21) is 0.05~0.5mm, preferably 0.2mm.
4. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 2, feature
It is, a length of 5~15mm, preferably 10mm of the parallel grating (21)；Width is 2~12mm, preferably 6mm.
5. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 2, feature
It is,
The preparation method of the parallel grating (21) is the following steps are included: provide a silicon chip (7)；On the silicon chip (7)
Pass through SiO2Sedimentation prepares SiO2Film (8)；In SiO2Film coats highly viscous positive photoresist on (8)；Use ultraviolet light
Exposure sources carry out lithography operations, and then sample is placed in developer solution and is developed；SiO is etched using reactive ion etching method2It is thin
Film (8)；Sample is performed etching using deep reaction ion etching method, until engraved structure occur in sample surfaces, is obtained described
Parallel grating (21).
6. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 5, feature
Be, the silicon chip (7) with a thickness of 0.1~0.5mm, preferably 0.2mm；The SiO2Film with a thickness of 300~
1000nm, preferably 500nm；The coating thickness of the positive photoresist is 1500~3500nm, preferably 2500nm；It is described aobvious
Shadow liquid is NMD-3 developing solution；Etching liquid used in the reactive ion etching method is hydrofluoric acid solution；The deep reaction
Etching gas used in ion etching method is SF6And C4F8Admixture of gas.
7. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 5, feature
It is, the silicon chip (7) is n-type silicon wafer.
8. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 1, feature
Be, the cantilever beam (4) the preparation method comprises the following steps:
The cantilever beam SOI Substrate for being used for photoetching treatment, the spin coating photoresist on the cantilever beam SOI Substrate are provided；
Using cantilever beam structure mask plate, designed mask plate structure pattern is shifted in mask using photoetching and developing technique
The cantilever beam SOI Substrate surface of plate；
Cantilever beam SOI Substrate is performed etching with ICP lithographic technique, obtains the cantilever beam (4).
9. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 8, feature
Be, the mass block (5) the preparation method comprises the following steps:
The mass block SOI Substrate for being used for photoetching treatment, the spin coating photoresist on the mass block SOI Substrate are provided；
The quality mask plates of photoetching treatment are ready for, by the alignment on the quality mask plates and cantilever beam mask plate
Designed mass block mask plate structure pattern is shifted the mass block in mask plate using photoetching and developing technique by label alignment
SOI Substrate surface；
Mass block SOI Substrate is performed etching with ICP lithographic technique；
The mass block (5) are obtained with the buried oxide layer of wet corrosion technique etching mass block SOI Substrate.
10. a kind of micro-acceleration sensor that can be changed diffraction grating with period stretch formula according to claim 1, feature
It is, the cantilever beam (4) is respectively arranged at the two sides of the mass block (5) there are two setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910527294.6A CN110208576B (en) | 2019-06-18 | 2019-06-18 | Micro-acceleration sensor with period telescopic variable diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910527294.6A CN110208576B (en) | 2019-06-18 | 2019-06-18 | Micro-acceleration sensor with period telescopic variable diffraction grating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110208576A true CN110208576A (en) | 2019-09-06 |
| CN110208576B CN110208576B (en) | 2022-02-11 |
Family
ID=67793366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910527294.6A Active CN110208576B (en) | 2019-06-18 | 2019-06-18 | Micro-acceleration sensor with period telescopic variable diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110208576B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113311189A (en) * | 2021-05-25 | 2021-08-27 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000230935A (en) * | 1999-02-08 | 2000-08-22 | Shimizu Corp | Accelerometer and acceleration-measuring apparatus equipped with the same |
| CN101231345A (en) * | 2006-08-02 | 2008-07-30 | 中国石油大学(北京) | Radiodetector for seismic exploration and transrectification system thereof |
| CN101546036A (en) * | 2009-04-30 | 2009-09-30 | 上海交通大学 | Shape memory alloy spring drive-based adjustable focal length silicon grating and preparation method thereof |
| CN101793909A (en) * | 2010-02-09 | 2010-08-04 | 北京航空航天大学 | Novel grating accelerometer |
| US20140076050A1 (en) * | 2012-09-20 | 2014-03-20 | Pixart Imaging Inc | Optical accelerometer |
| CN105158507A (en) * | 2015-06-23 | 2015-12-16 | 中国电子科技集团公司第二十三研究所 | Fiber grating acceleration sensor and manufacturing method thereof |
| CN108957031A (en) * | 2018-08-07 | 2018-12-07 | 东南大学 | Wide range high sensitivity vibration of optical sensor based on vibration coupling |
-
2019
- 2019-06-18 CN CN201910527294.6A patent/CN110208576B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000230935A (en) * | 1999-02-08 | 2000-08-22 | Shimizu Corp | Accelerometer and acceleration-measuring apparatus equipped with the same |
| CN101231345A (en) * | 2006-08-02 | 2008-07-30 | 中国石油大学(北京) | Radiodetector for seismic exploration and transrectification system thereof |
| CN101546036A (en) * | 2009-04-30 | 2009-09-30 | 上海交通大学 | Shape memory alloy spring drive-based adjustable focal length silicon grating and preparation method thereof |
| CN101793909A (en) * | 2010-02-09 | 2010-08-04 | 北京航空航天大学 | Novel grating accelerometer |
| US20140076050A1 (en) * | 2012-09-20 | 2014-03-20 | Pixart Imaging Inc | Optical accelerometer |
| CN105158507A (en) * | 2015-06-23 | 2015-12-16 | 中国电子科技集团公司第二十三研究所 | Fiber grating acceleration sensor and manufacturing method thereof |
| CN108957031A (en) * | 2018-08-07 | 2018-12-07 | 东南大学 | Wide range high sensitivity vibration of optical sensor based on vibration coupling |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113311189A (en) * | 2021-05-25 | 2021-08-27 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110208576B (en) | 2022-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103308717B (en) | Optical fiber Fabry-Perot acceleration sensor and manufacturing method thereof | |
| CN105445494B (en) | A kind of MOEMS accelerometers and its manufacturing method based on plane annular chamber | |
| US9625488B2 (en) | Variable area capacitive lateral acceleration sensor and preparation method thereof | |
| CN110329982B (en) | In-plane accelerometer based on rotating folding beam and nano optical resonant cavity and method | |
| US9625487B2 (en) | Capacitive acceleration sensor with a bending elastic beam and preparation method thereof | |
| CN110308306B (en) | MOEMS accelerometer based on fully-differential two-dimensional photonic crystal cavity structure and processing method thereof | |
| CN103091013B (en) | Miniature SU-8 optical fiber fabry-perot pressure sensor and preparation method thereof | |
| CN106052915A (en) | MEMS fiber pressure sensor and manufacturing method thereof | |
| GB2594765A (en) | An out-of-plane open-loop accelerometer based on surface plasmon and corresponding method | |
| CN110208576A (en) | A kind of micro-acceleration sensor can be changed diffraction grating with period stretch formula | |
| Dai et al. | Optical fiber Fabry–Pérot pressure sensor based on a polymer structure | |
| EP2846131A1 (en) | Inclinometer of improved precision and manufacturing method thereof | |
| CN104406526B (en) | Pulse micro displacement sensor and displacement measuring method thereof | |
| CN104406525A (en) | Grating group micro-displacement sensor and displacement measuring method using same | |
| CN108195366B (en) | Processing method of micro-nano gyroscope based on double-layer nano grating | |
| CN104406524B (en) | Combined grating micrometric displacement sensor and displacement measuring method using same | |
| KR20030080637A (en) | Accelerometers and accelerometers that use mems manufacture method | |
| Sauter et al. | Making optical MEMS sensors more compact using organic light sources and detectors | |
| CN104614550A (en) | Pulse micro-mechanical acceleration sensor and acceleration speed measuring method thereof | |
| CN114459450B (en) | Novel MOEMS gyroscope based on electrostatic drive and processing method thereof | |
| Wahl et al. | SUB-0.05° precision optofluidic dual-axis inclinometer | |
| Teo et al. | Highly sensitive optical motion detector | |
| CN104569489A (en) | Optical grating set micromachined acceleration sensor and accelerated speed measurement method thereof | |
| CN106586940A (en) | Silicon-based force magnitude probe and preparation method thereof | |
| CN104614551B (en) | Combine grating micro-machine acceleration transducer and its method for measuring acceleration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |