GB2594765A - An out-of-plane open-loop accelerometer based on surface plasmon and corresponding method - Google Patents
An out-of-plane open-loop accelerometer based on surface plasmon and corresponding method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 109
- 239000010703 silicon Substances 0.000 claims abstract description 109
- 239000012528 membrane Substances 0.000 claims abstract description 53
- 230000001133 acceleration Effects 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 238000006073 displacement reaction Methods 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 210000000689 upper leg Anatomy 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000609 electron-beam lithography Methods 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 24
- 238000004458 analytical method Methods 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 230000002068 genetic effect Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 241000321453 Paranthias colonus Species 0.000 description 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means
- G01P15/032—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means by measuring the displacement of a movable inertial mass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
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Abstract
An out-of-plane open-loop accelerometer based on surface plasmon comprising a laser source 1, an opto-isolator 2, a beam splitter 3, two photoelectric detectors 6, 7, an acceleration sensing structure 5, a near-field optical resonant cavity 4 and a piezoelectric film 16. The piezoelectric film contains the Ti/Pt bottom electrode layer 16. The acceleration sensing unit (Fig.2) is composed of a proof mass, four serpentine shaped cantilevers and a silicon frame; the near-field optical resonant cavity is composed of a sub-wavelength silicon grating 11, an air gap 14, a silicon substrate 13 and two sliver membranes 10, 12 coated on both the sub-wavelength silicon grating and the silicon substrate. The near-field optical resonant cavity is optimized via rigorous coupled-wave analysis and genetic algorithm to enable a high sensitivity of the output light intensity for a given cavity length; the piezoelectric film is able to adjust the cavity length, enabling the accelerometer operate at a high sensitivity point. The out-of-plane open-loop accelerometer utilises the coupling of surface plasmon, thus increasing the sensitivity.
Description
AN OUT-OF-PLANE OPEN-LOOP ACCELEROMETER BASED ON SURFACE PLASMON AND CORRESPONDING METHOD
Technical field:
This invention relates to an accelerometer, especially to an out-of-plane open-loop accelerometer based on surface plasmon and corresponding method.
Background:
The measuring principle of optical accelerometers is usually that the acceleration sensing structure translate the acceleration to the displacement, then use the interference or diffraction of light to extract the displacement. This kind of measurement is based on the scalar diffraction theory approximation, which is applicable in the condition that the size of structure and interaction region is larger than the wavelength of light. However, there exists the diffraction limit of light in this approximation, and the optical displacement measurement and acceleration measurement are constrained by the wavelength of light.
The scalar diffraction theory approximation does not apply to the near field or sub-wavelength structure analysis. As early as 100 years before, Wood found that there was anomaly of absorption/reflectance whilst light passed through sub-wavelength structure. This phenomenon, which is termed Wood's anomaly, is found to be due to the surface plasmon stimulation and coupling [BARNES W L, DEREUX A, EBBESEN T W. Surface plasmon subwavelength optics [J]. Nature, 2003, 424(6950):824-30.]. By using this kind of resonant enhancement of surface plasmon, the sensitivity of optical displacement measurement could be improved to pico-or even sub-pico-meter level [DW C, JP S, TA F. Laterally deformable nanomechanical zeroth-order gratings: anomalous diffraction studied by rigorous coupled-wave analysis [J]. Opt Lett, 2003, 2808): 1636-8.], thereby improving the sensitivity of acceleration measurement. However, conventional schemes based on surface plasmon usually have complicated near-field optical resonant structure, or are of infeasible acceleration sensing structure, which lead to a significant manufacturing difficulty and low reliability. In addition, conventional schemes are lack of approaches to adjust the relative position of the acceleration sensing structure, so that it is difficult to maintain the accelerometer working at the highest sensitivity point.
For example, an optical nano-mechanical-electric inertial sensor put forward by Dustin from Sandia National Laboratory [KEELER B E N, BOGART G R, CARR D W. Laterally deformable optical NEMS grating transducers for inertial sensing applications; proceedings of the Nanofabrication: Technologies, Devices, and Applications, F, 2005 [C].], the near-field optical interferometric cavity is composed of two movable sub-wavelength gratings, an air gap and a multilayer substrate. The material of the moveable sub-wavelength gratings is amorphous diamond, and the materials of substrate contain silicon dioxide and silicon nitride. This design has a high complexity of structure, while the displacement-light intensity sensitivity is still smaller than 2%/nm. Tong Zhang from Southeast University designed a hybrid accelerometer based on surface plasmon. The acceleration sensing structure is flexible, which leads to the diversity, but also the low sensitivity and unknown reliability. Painter from California Institute of Technology proposed an optomechanical accelerometer based on a photonic crystal cavity [KRAUSE A G, WINGER M, BLASIUS T D, et al. A high-resolution microchip optomechanical accelerometer [J]. Nature Photonics, 2012, 6(11): 768-72.]. The displacement-light intensity sensitivity is very high, whereas the acceleration sensing structure is not designedly optimized, so that the acceleration measurement sensitivity is not very superior. The accelerometer based on sub-wavelength grating pair, proposed by Lishuang Feng from Beijing University of Aeronautics and Astronautics, has a relatively simple structure, but the sub-wavelength grating pair serves as a diffraction grating, thus, the sensitivity is smaller than 0.5%/mg.
In general, conventional schemes based on surface plasmon are complicated or lack of feasible structural design, resulting in the acceleration measurement sensitivity of smaller than 3°/0/mg and no position adjustments method.
Summary of the invention:
This invention addresses aforementioned issues, proposing an out-of-plane open-loop accelerometer based on surface plasmon, wherein the near-field optical resonant cavity can dramatically improve the displacement measurement sensitivity without compromising the complexity of the structure; the piezoelectric film offers an approach to adjust the acceleration sensing structure; combining with the serpentine-shaped cantilevers, it is able to realize the out-of-plane acceleration measurement with ultra-high sensitivity.
The technical project adopted in present invention is as follows: The out-of-plane open-loop accelerometer based on surface plasmon, is composed of a silicon frame, a first photoelectric detector and a second photoelectric detector; the first photoelectric detector is mounted on the inner side wall of the silicon frame, and its detection plane is normal to the direction of the reflected laser beam; the second photoelectric detector is mounted above the first photoelectric detector; the accelerometer is further comprising of an acceleration sensing structure and an out-of-plane displacement sensing unit, which are both arranged in the silicon frame; The acceleration sensing structure is formed by a proof mass, serpentine-shaped cantilevers and a silicon frame; the proof mass is fixed to the inside wall of the silicon frame through four circularly distributed serpentine-shaped cantilevers; the proof mass is rectangle with the same length and width, but the thickness is different from the length; one serpentine-shaped cantilever contains several meanders, wherein one meander contains a shin and a thigh, and the length of the shins is larger than that of the thighs; shins and thighs are perpendicularly connected to form the serpentine-shaped cantilevers; the thighs are parallel to the side edge of the proof mass; the sub-wavelength silicon grating is located in the center of the proof mass, wherein the period of the sub-wavelength silicon grating is 531±10 nm, the duty cycle is 32%, the thickness is 1142±10 nm, which is identical to the proof mass; The out-of-plane displacement sensing unit comprises a laser source, an opto-isolator, a beam splitter, the sub-wavelength silicon grating on the proof mass, an air gap, a piezoelectric film, a silicon dioxide film, a silicon substrate, and a sliver membrane coated on the sub-wavelength silicon grating and a sliver membrane coated on the silicon substrate; The sliver membrane coated on the silicon substrate is arranged directly below the orthographic projection of the etched component of the sub-wavelength silicon grating, with an offset of 69±100 nm along the direction perpendicular to the grid line of the sub-wavelength silicon grating; the silicon substrate is arranged on the inner bottom plane of the fixed frame; the laser source is mounted on the top of the inside wall of the fixed frame, the opto-isolator is installed below the laser source, the beam splitter is mounted below the opto-isolator; the silicon frame is arranged above the silicon substrate through the silicon dioxide film and piezoelectric film; the proof mass is suspended above the silicon substrate through four serpentine-shaped cantilevers, forming the air gap between the sub-wavelength silicon grating and the silicon substrate; the sub-wavelength silicon grating is located below the beam splitter, and is parallel to the silicon substrate; a near-field optical resonant cavity is formed by the sub-wavelength silicon grating coated with the sliver membrane, the silicon substrate coated with the silver membrane, and the air gap; The sliver membrane coated on the sub-wavelength silicon grating has a period of 531±10 nm, a duty cycle of 32%, a thickness of 196±20 nm; the sliver membrane coated on the silicon substrate has a period of 531±10 nm, a duty cycle of 68%, a thickness of 196±20 nm; the height of the air gap is 2280±10 nm.
The piezoelectric film contains the Ti/Pt bottom electrode layer, lead zirconate titanate layer and Ti/Pt top electrode layer from bottom to top; the silicon dioxide film is arranged between the Ti/Pt bottom electrode layer and the silicon substrate; the thickness of the Ti/Pt bottom electrode layer and Ti/Pt top electrode layer are both 20/100 nm, and the thickness of Ti is 20 nm, the thickness of Pt is 100 nm.
The length and width of the proof mass are identical, and the thickness of the proof mass is 1142±10 nm, which is identical to the thickness of the serpentine-shaped cantilevers.
The wavelength of the laser source is 1550 nm, and is in TE mode.
A process for manufacturing the acceleration sensing structure and the near-field optical resonant cavity, wherein it comprises the following steps: Step 1: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane on the polished monocrystalline wafer, to form the sliver membrane coated on the silicon substrate; Step 2: utilizing thermal oxidation and chemico-mechanical polishing to form the silicon dioxide film with a thickness of 1080±40 nm; Step 3: growing the piezoelectric film: firstly, utilizing magnetron sputtering to grow a Ti/Pt membrane, forming the Ti/Pt bottom electrode layer; secondly, utilizing magnetron sputtering to grow a lead zirconate titanate film with a thickness of 1000±100 nm, and a piezoelectric constant of larger than 100 pC/N; finally, utilizing magnetron sputtering to grow a Ti/Pt membrane, to form the Ti/Pt top electrode layer; Step 4: utilizing reactive ion beam etching to etch the area of the proof mass and the cantilevers, to form the ringlike piezoelectric film; Step 5: in the ringlike piezoelectric film, utilizing chemical vapor deposition to grow a silicon dioxide film on the thermal oxide layer as mentioned in step 2, then using chemico-mechanical polishing to reduce the thickness until the upper surface is coincide with the upper surface of the Ti/Pt top electrode layer; Step 6: utilizing chemical vapor deposition to grow a polysilicon layer on the whole wafer; Step 7: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane, forming the sliver membrane coated on the sub-wavelength silicon grating; Step 8: utilizing electron beam lithography to pattern the sub-wavelength silicon grating and the serpentine-shaped cantilevers, then utilizing reactive ion beam etching to etch the area, forming the sub-wavelength silicon grating and the serpentine-shaped cantilevers; Step 9: utilizing wet etching to remove the exposed silicon dioxide layer to release the acceleration sensing structure The thickness of the polished monocrystalline wafer is 300-500 pm, the thickness of the thermal oxide layer between the silicon substrate and the piezoelectric film is 1080±40 nm, the thickness of the polysilicon layer grown by chemical vapor deposition is 1142±10 nm.
Compared with existing techniques, the benefit of the invention is that: This invention combines the rigorous coupled-wave analysis and genetic algorithm to optimize the parameters of the near-field optical resonant cavity, pushing the displacement-light intensity sensitivity beyond the state of the art, which is up to 30%/nm (under the premise that the acceleration-displacement sensitivity of the acceleration-sensing structure is 1 nm/mg). This means that when the accelerometer is subjected to an acceleration of 1 mg, the light intensity of the reflected beam would change 30% of the input light intensity.
The piezoelectric film introduced by this invention, can drive the acceleration sensing structure to have an out-of-plane displacement with a nano-meter scale precision, which can not only maintain the accelerometer work at the highest sensitivity point, but also offer an approach to further increase the signal-to-noise ratio by modulation and demodulation.
The lateral offset of two sliver membranes are designed by the aforementioned global optimization, and the offset and corresponding parameters setting help the accelerometer to be insensitive to the in-plane displacement, but only sensitive to the out-of-plane displacement.
When the acceleration sensing structure based on the serpentine-shaped cantilevers is subjected to the external acceleration, the proof mass would have an out-of-plane displacement that is in the opposite direction. The amplitude of the displacement is linear with the applied acceleration. Because the serpentine-shaped cantilevers are of far smaller elastic constant of the out-of-plane direction compared to the in-plane directions, the acceleration sensing structure have high acceleration-displacement sensitivity and relatively low cross-axis sensitivity. In addition, the sub-wavelength silicon grating is located in the center of the proof mass, and as a component of the proof mass, which offers high integration of the near-field optical resonant cavity and the acceleration sensing structure.
This invention considers the tolerance of the parameters of the near-field optical resonant cavity to ensure that the requirement of the fabrication error is within the limit of the micromachining processes, which enables the feasibility of the design.
Brief description of drawings:
The accompanying drawings are presented for illustrative purposes only and are not intended to be drawn to scale.
Fig. 1 is an illustrative schematic of an out-of-plane open-loop accelerometer; Fig. 2 is an illustrative structural schematic of the acceleration sensing structure based on serpentine-shaped cantilevers; Fig. 3 illustrates the fabrication process of the near-field optical resonant cavity; Fig. 4 illustrates the fabrication process of the acceleration sensing structure; Fig. 5 illustrates the light intensity of the reflection beam as a function of the applied acceleration; Fig. 6a & 6b are an illustrative graphs of electromagnetic field distributions of the near-field optical resonant cavity in both the reflection mode and the transmission mode.
In these graphs, there are: laser source 1, opto-isolator 2, beam splitter 3, near-field optical resonant cavity 4, acceleration sensing structure 5, first photoelectric detector 6, second photoelectric detector 7, fixed frame 8, packaging 9, upper silver membrane 10, sub-wavelength silicon grating 11, lower silver membrane 12, silicon substrate 13, air gap 14, silicon dioxide film 15, Ti/Pt bottom electrode layer 16, lead zirconate titanate layer 17, Ti/Pt top electrode layer 18, incident laser 19, reflection beam 20, serpentine-shaped cantilevers 21, proof mass 22, silicon frame 23, meander 24, shin 25, thigh 26, monocrystalline wafer 27, thermal oxide layer 28, chemical vapor deposited silicon dioxide film 29, polysilicon layer 30.
Detailed description:
Devices, apparatuses, systems, and methods disclosed herein apply optical readout techniques to measure the relative displacement of the movable grating. The persons skilled in the art can learn the effects and advantages of this invention from the description. To be sure, the graphs shown in present embodiments provide the basic concept of the invention in the form of schematics. The number, geometry and dimensions of the related components in the schematics may not coincide with the practice.
Referring to Fig. 1, this invention gives an out-of-plane open-loop accelerometer based on surface plasmon, which is composed a laser source 1, an opto-isolator 2, a beam splitter 3, a near-field optical resonant cavity 4, an acceleration sensing structure 5, a first photoelectric detector 6, a second photoelectric detector 7, a fixed frame 8, a packaging 9, a piezoelectric film comprising a Ti/Pt bottom electrode layer 16, a lead zirconate fitanate layer 17, and a Ti/Pt top electrode layer 18; the near-field optical resonant cavity 4 is composed of an upper silver membrane 10, a sub-wavelength silicon grating 11, a lower silver membrane 12, a silicon substrate 13, and an air gap 14; The acceleration sensing structure 5 is composed four serpentine-shaped cantilevers 21, a proof mass 22, and a silicon frame 23; as shown in Fig. 2, the proof mass 22 is a cuboid with the same length and width, and is fixed to the inside wall of the silicon frame through four circularly distributed serpentine-shaped cantilevers; the serpentine-shaped cantilevers 21 are etched between the proof mass 22 and the silicon frame 23, containing several meanders 24, which contain a shin 25 and a thigh 26; the length of the shin 25 is larger than that of the thigh 26, and the shins and the thighs are perpendicularly connected to form the serpentine-shaped cantilevers 21; the thighs are parallel to the side edge of the proof mass 22; a sub-wavelength silicon grating 11 is located in the center of the proof mass 22, wherein the period of the sub-wavelength silicon grating 11 is 531±10 nm, the duty cycle is 32%, the thickness is 1142±10 nm, which is identical to the thickness the proof mass 22; The out-of-plane displacement sensing unit comprises a laser source 1, an opto-isolator 2, a beam splitter 3, the sub-wavelength silicon grating 11 on the proof mass 22, an air gap14, a piezoelectric film, a silicon dioxide film 15, a silicon substrate 13, and an upper sliver membrane 10 coated on the sub-wavelength silicon grating 11 and a lower sliver membrane 12 coated on the silicon substrate 13; the lower sliver membrane 12 coated on the silicon substrate 13 is arranged directly below the orthographic projection of the etched component of the sub-wavelength silicon grating 11, with an offset of 69±100 nm along the direction perpendicular to the grid line of the sub-wavelength silicon grating 11; the silicon substrate 13 is arranged on the inner bottom plane of the fixed frame 8; the laser source 1 is mounted on the top of the inside wall of the fixed frame 8, the opto-isolator 2 is installed below the laser source 1, the beam splitter 3 is mounted below the opto-isolator 2; the silicon frame 8 is arranged above the silicon substrate 13 through the silicon dioxide film 15 and piezoelectric film; the piezoelectric film contains the Ti/Pt bottom electrode layer 16, lead zirconate titanate layer 17 and Ti/Pt top electrode layer 18 from bottom to top; the silicon dioxide film 15 is arranged between the Ti/Pt bottom electrode layer 16 and the silicon substrate 13; the proof mass 22 is suspended above the silicon substrate 13 through four serpentine-shaped cantilevers 21, forming the air gap 14 between the sub-wavelength silicon grating 11 and the silicon substrate 13; the sub-wavelength silicon grating 11 is located below the beam splitter 3, and is parallel to the silicon substrate 13; a near-field optical resonant cavity 4 is formed by the sub-wavelength silicon grating 11 coated with the upper sliver membrane 10, the silicon substrate 13 coated with the lower silver membrane 12, and the air gap 14; The upper sliver membrane 10 coated on the sub-wavelength silicon grating 11 has a period of 531±10 nm, a duty cycle of 32%, a thickness of 196±20 nm; the lower sliver membrane 12 coated on the silicon substrate 13 has a period of 531±10 nm, a duty cycle of 68%, a thickness of 196±20 nm; the height of the air gap 14 is 2280±10 nm.
The measuring principle of the invention is described as follows: When there is an out-of-plane acceleration applied to the accelerometer, the acceleration sensing structure 5 would have an out-of-plane displacement of the proof mass 22 relative to the silicon substrate 13, changing the surface plasmon coupling condition of the near-field optical resonant cavity 4; the laser source 1 emits TE mode laser, whose wavelength is 1550 nm, the incident laser 19 passes through the opto-isolator 2 and the beam splitter 3, and normally strikes the near-field optical resonant cavity 4; the diffraction would vanish and the light converts to surface plasmon because the period of the sub-wavelength silicon grating 11, upper sliver membrane 10 and lower sliver membranes 12 as well as the air gap 14 are smaller than the wavelength of the incident laser 19; the surface plasmon propagates in the near-field optical resonant cavity 4, and couples to the sub-wavelength silicon grating 11 and lower sliver membrane 12; while the sub-wavelength silicon grating 11 has an out-of-plane displacement, the boundary and coupling condition of the near-field optical resonant cavity 4 change, leading to the dramatic variation of the light intensity of the reflection beam 20. Referring to Fig. 6(a), the near-field optical resonant cavity 4 is in the reflection mode when the air gap 14 is 2.27 pm, which means that the light intensity of the reflection beam 20 is maximum; referring to Fig. 6(b), the near-field optical resonant cavity 4 is in the transmission mode when the air gap 14 is 2.28 pm, which means that the light intensity of the reflection beam 20 is minimum; the interval is the acceleration measurement range of the accelerometer, and it is able to measure the acceleration with high sensitivity and linearity in such a range.
Fig. 5 shows the light intensity of the reflection beam 20 as a function of the out-of-plane acceleration, whilst the acceleration-displacement sensitivity of the acceleration sensing structure 5 is 1nm/mg. It is found that the acceleration measurement sensitivity is larger than 30%/mg, which means that the light intensity of the reflection beam 20 changes 30% of the light intensity of the incident beam 19 when the accelerometer is subjected to an out-of-plane acceleration of 1 mg. This invention considers the tolerance of the parameters to make sure that acceleration measurement sensitivity can be larger than 20%, outperforming conventional counterparts.
The parameters of the near-field optical resonant cavity 4 include: the wavelength of the incident laser 19 is 1550 nm; the sub-wavelength silicon grating 11 has a period of 531±10 nm, a duty cycle of 32%, a thickness of 1142±10 nm; the upper sliver membrane and the lower sliver membrane have the same period and thickness, which are 531±10 nm and 192±20 nm, respectively, and the duty cycle of the upper sliver membrane is 32%, the duty cycle of the lower sliver membrane is 68%; two sliver membranes have an offset of 69±100 nm along the direction perpendicular to the grid line of the sub-wavelength silicon grating 11 the height of the air gap 14 is 2280±10 nm.
The parameters of the acceleration sensing structure 5 include: the length and width of the proof mass 22 are identical, and the thickness is 1142±10 nm; the thickness of the silicon frame 23 is 1142±10 nm; the width and thickness of the shins 25 and thighs 26 are identical, and their thickness is 1142±10 nm, whereas the length and width can be adjustable.
The thickness of the Ti/Pt bottom electrode layer 16 and Ti/Pt top electrode layer 18 are both 20/100 nm, and the thickness of Ti is 20 nm, the thickness of Pt is 100 nm; the thickness of the lead zirconate titanate film is 1000±100 nm.
Referring to Fig. 3 and Fig. 4, the invention provides a fabrication process of the near-field optical resonant cavity 4 and the acceleration sensing structure 5, wherein the adopted wafer is a monocrystalline wafer 27, whose thickness is 300-500 pm. The fabrication process includes: Step 1: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane on the polished monocrystalline wafer 27, to form the lower sliver membrane 12 coated on the silicon substrate 13; Step 2: utilizing thermal oxidation and chemico-mechanical polishing to form the silicon dioxide film 28 with a thickness of 1080±40 nm; Step 3: growing the piezoelectric film: firstly, utilizing magnetron sputtering to grow a Ti/Pt membrane, forming the Ti/Pt bottom electrode layer 16; secondly, utilizing magnetron sputtering to grow a lead zirconate titanate film 17 with a thickness of 1000±100 nm, and a piezoelectric constant of larger than 100 pC/N; finally, utilizing magnetron sputtering to grow a Ti/Pt membrane, to form the Ti/Pt top electrode layer 18; Step 4: utilizing reactive ion beam etching to etch the area of the proof mass 22 and the serpentine-shaped cantilevers 21, to form the ringlike piezoelectric film, Step 5: in the ringlike piezoelectric film, utilizing chemical vapor deposition to grow a silicon dioxide film 29 on the thermal oxide layer 28 as mentioned in step 2, then using chemicomechanical polishing to reduce the thickness until the upper surface is coincide with the upper surface of the Ti/Pt top electrode layer 18; Step 6: utilizing chemical vapor deposition to grow a polysilicon layer 30 on the whole wafer; Step 7: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane, forming the upper sliver membrane 10 coated on the sub-wavelength silicon grating 11; Step 8: utilizing electron beam lithography to pattern the sub-wavelength silicon grating 11 and the serpentine-shaped cantilevers 21, then utilizing reactive ion beam etching to etch the area, forming the sub-wavelength silicon grating 11 and the serpentine-shaped cantilevers 21; Step 9: utilizing wet etching to remove the exposed silicon dioxide layer to release the acceleration sensing structure 5.
It can be seen that this invention utilizes the optimized near-field optical resonant cavity to realize the ultra-high sensitivity of optical displacement measurement. The optimized near-field optical resonant cavity not only has relatively large tolerance of parameters, which could be completed by conventional fabrication techniques, but can also be well integrated with the acceleration sensing structure, which increase the reliability of the accelerometer without compromising the integration. In addition, the piezoelectric film offers an approach to adjust zero and modulation, which improve the feasibility of the scheme.
While various embodiments described herein deal with measuring the out-of-plane acceleration of objects (e.g., a proof mass). It is to be understood that these techniques may be used in general to obtain information about the relative and/or absolute position and/or acceleration of the objects including, e.g., speed of motion, velocity, acceleration, etc. While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will readily envision a variety of other means and/or structures for performing the function and/or obtaining the results and/or one or more of the advantages described herein, and each of such variations and/or modifications is deemed to be within the scope of the inventive embodiments described herein. More generally, those skilled in the art will readily appreciate that all parameters, dimensions, materials, and configurations will depend upon the specific application or applications for which the inventive teaching is/are used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, inventive embodiments may be practiced otherwise than as specifically described and claimed.
Inventive embodiments of the present disclosure are directed to each individual feature, system, article, material, kit, and/or method described herein. In addition, any combination of two or more such features, systems, articles, materials, kits, and/or methods are not mutually inconsistent, is included within the inventive scope of the present disclosure.
Claims (7)
- Claims: 1. An out-of-plane open-loop accelerometer based on surface plasmon, comprising a fixed frame, a first photoelectric detector and a second photoelectric detector; the first photoelectric detector is mounted on the inner side wall of the fixed frame, and its detection plane is normal to the direction of the reflected laser beam; the second photoelectric detector is mounted above the first photoelectric detector; an acceleration sensing structure and an out-of-plane displacement sensing unit are provided in the fixed frame; the acceleration sensing structure comprises a proof mass, serpentine-shaped cantilevers and a silicon frame; the proof mass is a cuboid with the same length and width, and is fixed to the inside wall of the silicon frame through four circularly distributed serpentine-shaped cantilevers; the serpentine-shaped cantilevers are etched between the proof mass and the silicon frame, containing several shins and thighs; the length of the shins is larger than that of the thighs, and the shins and the thighs are perpendicularly connected to form the serpentine-shaped cantilevers; the thighs are parallel to the side edge of the proof mass; a sub-wavelength silicon grating is located in the center of the proof mass, wherein the period of the sub-wavelength silicon grating is 531±10 nm, the duty cycle is 32%, the thickness is 1142±10 nm, which is identical to the thickness the proof mass; the out-of-plane displacement sensing unit comprises a laser source, an opto-isolator, a beam splitter, the sub-wavelength silicon grating on the proof mass, an air gap, a piezoelectric film, a silicon dioxide film, a silicon substrate, and a sliver membrane coated on the sub-wavelength silicon grating and a sliver membrane coated on the silicon substrate; the silicon substrate is arranged on the inner bottom plane of the fixed frame; the laser source is mounted on the top of the inside wall of the fixed frame, the opto-isolator is installed below the laser source, the beam splitter is mounted below the opto-isolator; the silicon frame is arranged above the silicon substrate through the silicon dioxide film and piezoelectric film; the piezoelectric film contains the Ti/Pt bottom electrode layer, lead zirconate titanate layer and Ti/Pt top electrode layer from bottom to top; the silicon dioxide film is arranged between the Ti/Pt bottom electrode layer and the silicon substrate; the proof mass is suspended above the silicon substrate through four serpentine-shaped cantilevers, forming the air gap between the sub-wavelength silicon grating and the silicon substrate; the sub-wavelength silicon grating is located below the beam splitter, and is parallel to the silicon substrate; a near-field optical resonant cavity is formed by the sub-wavelength silicon grating coated with the sliver membrane, the silicon substrate coated with the silver membrane, and the air gap; The sliver membrane coated on the silicon substrate is arranged directly below the orthographic projection of the etched component of the sub-wavelength silicon grating, with an offset of 69±100 nm along the direction perpendicular to the grid line of the sub-wavelength silicon grating; the sliver membrane coated on the sub-wavelength silicon grating has a period of 531±10 nm, a duty cycle of 32%, a thickness of 196±20 nm; the sliver membrane coated on the silicon substrate has a period of 531±10 nm, a duty cycle of 68%, a thickness of 196±20 nm; the height of the air gap is 2280±10 nm.
- 2. The out-of-plane open-loop accelerometer based on surface plasmon according to claim 1, wherein the thickness of the proof mass is 1142±10 nm, which is identical to the thickness of the serpentine-shaped cantilevers.
- 3. The out-of-plane open-loop accelerometer based on surface plasmon according to claim 1, wherein the thickness of the Ti/Pt bottom electrode layer and Ti/Pt top electrode layer are both nm, and the thickness of Ti is 20 nm, the thickness of Pt is 100 nm; the thickness of the lead zirconate fitanate layer is 1000±100 nm.
- 4. The out-of-plane open-loop accelerometer based on surface plasmon according to claim 1, wherein the four serpentine-shaped cantilevers are located at four corners of the proof mass.
- 5. The out-of-plane open-loop accelerometer based on surface plasmon according to claim 1, wherein the wavelength of the laser source is 1550 nm, and is in TE mode.
- 6. A process for manufacturing the acceleration sensing structure and the near-field optical resonant cavity according to claim 1, wherein it comprises the following steps: Step 1: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane on the polished monocrystalline wafer, to form the sliver membrane coated on the silicon substrate; Step 2: utilizing thermal oxidation and chemico-mechanical polishing to form the silicon dioxide film with a thickness of 1080±40 nm; Step 3: growing the piezoelectric film: firstly, utilizing magnetron sputtering to grow a Ti/Pt membrane, forming the Ti/Pt bottom electrode layer; secondly, utilizing magnetron sputtering to grow a lead zirconate titanate film with a thickness of 1000±100 nm, and a piezoelectric constant of larger than 100 pC/N; finally, utilizing magnetron sputtering to grow a Ti/Pt membrane, to form the Ti/Pt top electrode layer; Step 4: utilizing reactive ion beam etching to etch the area of the proof mass and the cantilevers, to form the ringlike piezoelectric film; Step 5: in the ringlike piezoelectric film, utilizing chemical vapor deposition to grow a silicon dioxide film on the thermal oxide layer as mentioned in step 2, then using chemico-mechanical polishing to reduce the thickness until the upper surface is coincide with the upper surface of the Ti/Pt top electrode layer; Step 6: utilizing chemical vapor deposition to grow a polysilicon layer on the whole wafer; Step 7: utilizing electron beam lithography, lift-off and electron beam evaporation to pattern the sliver membrane, forming the sliver membrane coated on the sub-wavelength silicon grating; Step 8: utilizing electron beam lithography to pattern the sub-wavelength silicon grating and the serpentine-shaped cantilevers, then utilizing reactive ion beam etching to etch the area, forming the sub-wavelength silicon grating and the serpentine-shaped cantilevers; Step 9: utilizing wet etching to remove the exposed silicon dioxide layer to release the acceleration sensing structure.
- 7. The process for manufacturing the acceleration sensing structure and the near-field optical resonant cavity according to claim 6, wherein the thickness of the polished monocrystalline wafer is 300-500 pm, the thickness of the thermal oxide layer between the silicon substrate and the piezoelectric film is 1080±40 nm, the thickness of the polysilicon layer grown by chemical vapor deposition is 1142±10 nm.
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