CN105372449B - Inhibit the micro-machine acceleration sensitive structure and its manufacturing method of crosstalk in high-precise uniaxial optics micro-acceleration gauge - Google Patents
Inhibit the micro-machine acceleration sensitive structure and its manufacturing method of crosstalk in high-precise uniaxial optics micro-acceleration gauge Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
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Abstract
The invention discloses the micro-machine acceleration sensitive structures and its manufacturing method that inhibit crosstalk in a kind of high-precise uniaxial optics micro-acceleration gauge, the micro-machine acceleration sensitive structure includes an individual silicon-sensitive mass block, four symmetrical crab-leg cantilevers, the silicon base of connecting cantilever beam and the reflectance coating for being plated in sensitive-mass block surface；The center of gravity of sensitive-mass block may insure that on the central plane of cantilever beam, the sensitive axis direction of uniaxial optical micro-acceleration gauge fundamentally inhibits off-axis crosstalk by the adjustment of position of centre of gravity perpendicular to the central plane by specially designed micro fabrication；The optics micro-acceleration gauge of the micro-machine acceleration sensitivity cooperation based on diffraction grating can effectively inhibit off-axis crosstalk under the premise of guaranteeing high acceleration measurement sensitivity, and the Surface-Micromachining of application can also realize that high-volume makes with IC process compatible.
Description
Technical field
The invention belongs to optics micro-acceleration sensor technical fields, are related to a kind of high-precise uniaxial optics micro-acceleration gauge
The middle micro-machine acceleration sensitive structure and its manufacturing method for inhibiting crosstalk.
Background technique
Accelerometer is a kind of sensor for measuring this fundamental physical quantity of acceleration, and fundamental measurement principle is based on newton
Second theorem, accelerometer generally comprise mechanical acceleration sensory system and displacement measurement system, and extraneous acceleration makes machinery
Mass block in acceleration sensitive system generates the displacement for having determining relationship with input acceleration size, displacement measurement system
The size of input acceleration is obtained by measuring the displacement.The performance of accelerometer is determined simultaneously by the two systems.It measures
The performance indicator of accelerometer has: sensitivity, resolution ratio, dynamic range, bandwidth of operation and off-axis crosstalk size etc..Wherein from
Acceleration analysis bring shadow of the acceleration for being consequently exerted at non-sensitive direction of axis crosstalk reflection to accelerometer sensitive axial direction
It rings.
Compared to tradition machinery electricity formula accelerometer, micro electro mechanical system accelerator have higher sensitivity, low noise,
Small in size, the advantages that light weight and cost is low, easy of integration, an important development direction of accelerometer is become.And compared to
Conventional microelectromechanical systems accelerometer, such as condenser type, piezoelectric type or pressure resistance type, optics micro-acceleration gauge can provide higher again
Acceleration analysis precision, electromagnetism interference, Larger Dynamic range and the advantages such as response is fast.Therefore, optics micro-acceleration gauge is being at present just
It is increasingly becoming a completely new accelerometer Hot spots for development.
Optics micro-acceleration gauge based on diffraction grating, which combines, has high-precision optical displacement measurement system and high acceleration
Degree-displacement sensitivity micro-machine acceleration sensory system can provide the acceleration analysis sensitivity more than 1000V/g and μ g
Acceleration analysis resolution ratio [12.S.Zhao, J.Zhang, C.Hou, J.Bai the and G.Yang, " Optical of rank
accelerometer based on grating interferometer with phase modulation
technique,"Appl.Opt.51,7005–7010(2011).].U.S. Patent No. US8783106B1's
“Micromachined force-balance feedback accelerometer with optical displacement
Detection " discloses a kind of force feedback light based on diffraction grating and the micro-machine acceleration sensory system being implemented on SOI
Accelerometer is learned, the sensitive-mass block and framework establishment of the accelerometer are on three layers of SOI, and sensitive-mass block is by backwards
Etching groove is opened with framework apart and suspension spring is used to connect with frame, when the accelerometer is by extraneous acceleration, mass block meeting
It moves up and down, acceleration can be completed by the displacement of the displacement measurement system out-going quality block based on diffraction grating
Measurement.The existing optics micro-acceleration gauge based on diffraction grating is although very high acceleration analysis precision can be provided, such as
Fruit micro-machine acceleration sensory system therein does not make improvement, and influence of the off-axis crosstalk for accelerometer also can be with acceleration
It spends the promotion of measurement accuracy and increases.And an important performance indexes of the off-axis crosstalk as measurement accelerometer, for high-precision
It should reduce especially for degree accelerometer, to avoid its influence to overall performance.
Certain research, needle are had been made for the off-axis crosstalk in micro electro mechanical system accelerator in world wide at present
The micro-acceleration gauges such as condenser type, piezoelectric type and pressure resistance type also proposed with the means of many clutter reductions.Beijing University passes through design one
The symmetrical sandwich structure of height of the kind based on double device layer SOI Substrates realizes a kind of capacitance microaccelerator of low crosstalk
[Q.Hu,C.Gao,Y.Hao,Y.Zhang and G.Yang,“Low cross-axis sensitivity micro-
gravity microelectromechanical system sandwich capacitance accelerometer,”
Micro&Nano Letters.6,510-514(2011).].A.Ravi Sankara of Wei Luoer Polytechnics of India et al. is logical
It crosses on mass block and deposits the position of centre of gravity that golden mode adjusts mass block, reduce the crosstalk in piezoelectric microaccelerometer
[A.Ravi Sankara and S.Dasb,“A very-low cross-axis sensitivity piezoresistive
accelerometer with an electroplated gold layer atop a thickness reduced proof
mass,"Sensors and Actuators A:Physical.189,125-133(2013).].However, optics micro-acceleration
Meter is based especially on the optics micro-acceleration gauge of diffraction grating, crosstalk Forming Mechanism and conventional microelectromechanical systems accelerometer
It is distinct, at present not yet about the system research of optics micro-acceleration gauge crosstalk and related inhibition structure in world wide.
High-precise uniaxial optics micro-acceleration gauge is applied to inertial navigation or microgravimetry field more, in actual measurement ring
Can be there is the acceleration of all directions in border, non-sensitive axial acceleration can be to there are the high-precision acceleration of off-axis crosstalk
The measurement result of meter brings very big influence.In order to solve to deposit in the high-precise uniaxial optics micro-acceleration gauge based on diffraction grating
Off-axis cross-interference issue, the symmetrical micro-machine acceleration sensitive structure of the height that the invention proposes a kind of based on five layers of SOI Substrate
And its micro Process manufacturing method greatly inhibits off-axis string while guarantee optics micro-acceleration gauge original measurement accuracy
It disturbs.
Summary of the invention
The present invention provides inhibit the micro-machine acceleration of crosstalk sensitive in a kind of high-precise uniaxial optics micro-acceleration gauge
Structure and its manufacturing method, the purpose of the present invention is inhibit high-precise uniaxial optics micro-acceleration gauge micro-machine acceleration sensitivity knot
In structure due to mass block center of gravity and cantilever beam central plane there are certain deviation caused by off-axis crosstalk, guaranteeing original acceleration
Under the premise of spending measurement accuracy, influence of the non-sensitive axial acceleration to sensitive axial acceleration analysis is reduced or eliminated.
In order to achieve the above object, the present invention provides clutter reduction knot in a kind of high-precise uniaxial optics micro-acceleration gauge
Structure, i.e., the symmetrical micro-machine acceleration sensitive structure for inhibiting crosstalk of a kind of height based on five layers of SOI Substrate, the micromechanics accelerate
Spending sensitive structure includes:
One piece of longitudinal thickness is the sensitive-mass block of five layers of SOI Substrate thickness, and center of gravity is located at the central plane of SOI Substrate
On namely the central plane of device layer on；
Four crab-leg cantilevers for being symmetrically distributed in mass block surrounding and being connected with outer ring silicon base, thickness are equal to device
Part thickness degree, central plane are overlapped with the central plane of SOI Substrate, and theoretically sensitive-mass block center of gravity is located at the center of cantilever beam
In plane；
One longitudinal thickness is the silicon base of five layers of SOI Substrate thickness, and cantilever beam is connected by anchor point with silicon base；
It is plated in the metal and deielectric-coating of sensitive-mass block upper surface, serves as reflectance coating；
The micro-machine acceleration sensitive structure is located at immediately below diffraction grating in optics micro-acceleration gauge, can be with diffraction
Grating integration packaging is passive device；
The micro-machine acceleration sensitive structure includes: mass block, the crab-leg cantilever being connected with the mass block, is hanged
The silicon base of arm beam end connection, is plated in metal and media coating that mass top surface serves as reflectance coating；
Wherein, mass block and the thickness of silicon base are equal to the thickness of five layers of SOI Substrate, and the thickness of cantilever beam is equal to monocrystalline
The thickness of silicon device layer；Single-crystal silicon device layer is located at the center of SOI Substrate, and the micro-machine acceleration sensitive structure is being encapsulated into
The suspension structure of sensitive-mass block and cantilever beam is connected to form under actual acceleration timing with a substrate.
The micro-machine acceleration sensitive structure is made by a kind of five layers of symmetrical SOI Substrate, and the substrate is by upper
To lower respectively basal layer 1, buried oxide layer 1, device layer, buried oxide layer 2, basal layer 2, wherein basal layer 1 and basal layer 2 are thickness phase
With monocrystalline silicon, device layer is the monocrystalline silicon of crystal orientation 100, and buried oxide layer 1 and buried oxide layer 2 are the identical silica of thickness.
Mass block center of gravity is accurately located on cantilever beam central plane, optics micro-acceleration gauge acceleration sensitive axis direction and outstanding
Arm beam central plane is vertical.
The film layer of mass top surface plating is divided into two layers, and upper layer is deielectric-coating, and lower layer is gold.
The micro-machine acceleration sensitive structure can make sensitive-mass block and cantilever beam hanging after encapsulating with a substrate,
And it is applied in high-precise uniaxial optics micro-acceleration gauge；In high-precise uniaxial optics micro-acceleration gauge, which accelerates
Degree sensitive structure is located at immediately below diffraction grating, and mass top surface reflectance coating and diffraction grating constitute a grating interference diffraction
Cavity, the optical displacement measurement system thus constituted can be obtained the acceleration of extraneous application by the displacement of detection sensitive-mass block
Spend size；
Four cantilever beams of the micro-machine acceleration sensitive structure are made with a device layer, are possessed identical
Central plane, and the center of gravity of mass block is located on the central plane of cantilever beam, the acceleration sensitive direction of optics micro-acceleration gauge
Perpendicular to the central plane of cantilever beam, therefore non-sensitive axial acceleration will not cause sensitive-mass block in accelerometer sensitive
The additional displacement and additional rotation in direction, will not thus make non-sensitive axial acceleration to subsequent optical displacement measurement with
And acceleration analysis has an impact, and has achieved the purpose that the off-axis crosstalk of inhibition；Simultaneously as the device layer thickness is with respect to SOI
Thickness very little, therefore can obtain much smaller than the cantilever beam of mass block thickness and larger sensitive-mass block, guarantee micro-machine acceleration
Sensitive structure possesses biggish acceleration-displacement sensitivity；
In addition, the present invention also provides a kind of manufacturing methods of above-mentioned micro-machine acceleration sensitive structure, comprising the following steps:
Five layers of SOI Substrate are provided, which is basal layer 1- buried oxide layer 1- device layer-buried oxide layer 2- basal layer 2
Symmetrical structure, wherein basal layer 1 and basal layer 2 are the identical monocrystalline silicon of thickness, and device layer is the monocrystalline silicon of crystal orientation 100, buries oxygen
Layer 1 and buried oxide layer 2 are the identical silica of thickness, the specific thickness parameter of SOI Substrate can according to actual performance demand into
Row design；
Pass through photoetching, magnetron sputtering plating and stripping technology production quality in 1 upper surface of basal layer of the SOI Substrate
Reflectance coating on block；
Monocrystalline silicon is etched to burying oxygen by photoetching, deep reactive ion beam etching technics on the basal layer 1 of the SOI Substrate
Produce the top half of mass block and substrate in barrier layer 1；
It is eroded using buffer oxide silicon etch solution (BOE) and exposed buries 1 region of oxygen barrier layers；
Monocrystalline silicon is etched to burying by glue spraying and deep reactive ion beam etching technics on the device layer of the SOI Substrate
Oxygen barrier layers 2 produce cantilever beam figure；
The residue glue for not removing previous step removes cantilever beam graph area using reactive ion beam etching (RIBE) technique as exposure mask
The silica of oxygen barrier layers 2 is buried other than domain；
Monocrystalline is etched by reverse side alignment and deep reactive ion beam etching technics on the basal layer 1 of the SOI Substrate
Silicon produces the lower half portion of mass block and substrate and discharges cantilever beam to burying oxygen barrier layers 2；
The residual of attachment on a cantilever beam, which is eroded, using buffer oxide silicon etch solution (BOE) buries oxygen barrier layers 2；
Residue glue is gone to complete structure release and anneal to discharge residual stress.
Compared with the prior art, the beneficial effects of the present invention are:
1, for the high-precise uniaxial optics micro-acceleration gauge based on diffraction grating, do not changing micro-machine acceleration sensitivity
Under the premise of system acceleration-displacement sensitivity, by five layers of SOI Substrate distribution of design and cantilever beam, mass block in SOI base
Position in piece realizes micro-machine acceleration sensory system on the centre of gravity adjustment of mass block to cantilever beam central plane
High degree of symmetry has been inherently eliminated mass block sensitivity axial displacement and rotation as caused by non-sensitive axial acceleration,
Inhibit off-axis crosstalk；
2, the micro fabrication used is mostly mature photoetching and etching technics, avoids the salient angle in wet process deep silicon etching
The problems such as compensation, it is ensured that higher depth-to-width ratio and verticality of side wall, and batch production can be realized with IC process compatible；
3, optimize remove photoresist with scribing process avoid micro-machine acceleration sensitive structure during etching and release by
In pressure difference is excessive or the reasons such as stress mismatch are damaged, the success rate of flow is improved under the premise of ensuring a suppression of crosstalk.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of high-precise uniaxial optics micro-acceleration gauge；
Fig. 2 is former micro-machine acceleration sensitive structure schematic diagram, wherein (a) original micro-machine acceleration sensitive structure is overlooked
Figure；(b) former micro-machine acceleration sensitive structure sectional view；
Fig. 3 is five layers of SOI Substrate diagrammatic cross-section that the present invention uses；
Fig. 4 is the micro-machine acceleration sensitive structure schematic diagram of inhibition crosstalk of the invention；
Fig. 5-Figure 12 is the stream of the produced by micro processing method of the micro-machine acceleration sensitive structure of inhibition crosstalk of the invention
Journey schematic diagram, the wherein reflectance coating of Fig. 5 production quality block upper surface；Fig. 6 production quality block and substrate top half；Fig. 7 is gone
Except burying oxygen barrier layers 1-16；Fig. 8 makes cantilever beam figure；Oxygen barrier layers 2-18 is buried in Fig. 9 pre-etching；Figure 10 production quality block
With substrate lower half portion；Oxygen barrier layers 2-18 is buried in Figure 11 removal；Figure 12 removes photoresist, anneals, and connects substrate pedestal；
Figure 13 is the experiment test platform schematic diagram of uniaxial optical micro-acceleration gauge；
Figure 14 is sensitive axially loaded using the uniaxial optical micro-acceleration gauge of former micro-machine acceleration sensitive structure
The graph of relation of acceleration and output voltage；
Figure 15 is non-sensitive axially loaded using the uniaxial optical micro-acceleration gauge of former micro-machine acceleration sensitive structure
Acceleration and output voltage graph of relation；
Figure 16 is the uniaxial optical micro-acceleration using the micro-machine acceleration sensitive structure of inhibition crosstalk of the invention
The graph of relation of meter sensitive axially loaded acceleration and output voltage；
Figure 17 is the uniaxial optical micro-acceleration using the micro-machine acceleration sensitive structure of inhibition crosstalk of the invention
Count the graph of relation of non-sensitive axially loaded acceleration and output voltage；
Comprising being based on optical displacement measurement system 1, micro-machine acceleration sensory system 2, laser 3, diffraction grating in figure
4, piezoelectric ceramics 5, photodetector 6, photodetector 7, incoming laser beam 8, first-order diffraction interference signal light 9, sensitive-mass
Block 10, silicon base 12, reflectance coating 13, substrate 14, the basal layer 1-15 in SOI Substrate, buries oxygen barrier layers at crab-leg cantilever 11
1-16, single-crystal silicon device layer 17 bury oxygen barrier layers 2-18, basal layer 2-19, precise rotating platform 20, adjustment knob 21, calculus of differences
Circuit 22, signal conditioning circuit 23, output voltage signal 24.
Specific embodiment
Below with reference to attached drawing and the specific specific example embodiment that the present invention will be described in detail, those skilled in the art
Other advantages and effect of the invention can be understood by this specification.It should be noted that the diagram provided in the present embodiment only with
The mode of schematic diagram illustrates basic conception of the invention, and the related component in schematic diagram might not be according to the group in actual implementation
Number of packages mesh, shape and size are drawn, and each component form, number, layout and the ratio in practical embodiments are likely more complexity.
The micro-machine acceleration sensitive structure provided by the invention for inhibiting crosstalk is applied to the micro- acceleration of high-precise uniaxial optics
Degree meter in, it is therefore an objective to inhibit the off-axis crosstalk as caused by micro mechanical structure asymmetry, improve optics micro-acceleration gauge by
To the output signal contrast and sensitivity when the effect of non-sensitive axial acceleration.As shown in Figure 1, the high-precise uniaxial optics is micro-
Accelerometer is mainly made of optical displacement measurement system 1 and micro-machine acceleration sensory system 2 this two large divisions, the two cooperation
Complete the high-acruracy survey of individual axis acceleration.Wherein optical displacement measurement system includes: laser 3, diffraction grating 4, piezoelectricity pottery
Reflectance coating 13 on porcelain 5, signal optical path photodetector 6, environment optical path photodetector 7 and mass block；Micromechanics accelerates
Degree sensory system includes: sensitive-mass block 10, cantilever beam 11, silicon substrate bottom framework 12, reflectance coating 13 and substrate on mass block
14.Laser 3 contains quality in first-order diffraction interference light signal 9 to provide measuring 632.8nm incoming laser beam 8
Displacement variable information and extraneous input acceleration size information between block 10 and diffraction grating 4.
The working principle of the uniaxial optical micro-acceleration gauge is as follows: laser 3 launches beam of laser 8, and the laser is vertical
It is incident on diffraction grating 4, reflective diffraction occurs for a portion laser, forms 0 grade, ± 1 grade and ± 3 grades of diffraction times；
Another part penetrates diffraction grating 4, is reflected by reflectance coating 13 again by grating 4 and transmissive diffraction occurs, and generates 0 grade, ± 1
Grade and ± 3 grades of diffraction times.Guarantee diffraction grating 4 be parallel to reflectance coating 13 under the premise of, reflective diffraction level can with it is saturating
It penetrates formula diffraction time coherent superposition and forms interference fringe, specifically,+1 (- 1) level of reflective diffraction can spread out with transmission-type
- 1 (+1) level coherent superposition penetrated, is displaced between the 1 grade of diffraction interference signal light intensity and mass block 10, diffraction grating 4 of formation
Variable quantity has specific relationship；And when there is extraneous acceleration to be loaded into micro-machine acceleration sensory system 2, sensitive-mass
Block 10 by inertia force act on so that cantilever beam 11 deformation occurs, and change mass top surface reflectance coating 13 and diffraction grating 4
Between displacement.When apply acceleration be in the acceleration dynamic range of optics micro-acceleration gauge when, displacement variable with
Application acceleration is linear, and by 1 accurately measure of optical displacement measurement system, the displacement can be obtained application
Acceleration magnitude.Phase-modulation demodulation can be introduced by the way that piezoelectric ceramics 5 is added, so as to improve the signal-to-noise ratio of optics micro-acceleration gauge
And measurement accuracy.
In an ideal case, uniaxial optical micro-acceleration gauge only accelerates sensitive axial acceleration sensitive namely micromechanics
The mass block for spending sensitive structure not will receive the influence of non-sensitive axial acceleration in sensitive axial displacement.However for former micro-
For mechanical acceleration sensitive structure and many optics micro-acceleration gauges, due to the asymmetry of micro-machine acceleration sensitive structure
Property, non-sensitive axial acceleration will lead to mass block in sensitive axial additional displacement and deflection, thus cause single shaft
Off-axis crosstalk in optics micro-acceleration gauge.
Below with reference to attached drawing the present invention will be described in detail by inhibit crosstalk micro-machine acceleration sensitive structure inhibit from
The principle of axis crosstalk.
It is provided by the invention inhibit crosstalk micro-machine acceleration sensitive structure as shown in figure 4, the structure by one piece such as
Special five layers of SOI Substrate production shown in Fig. 3.The substrate is basal layer 15- buried oxide layer 16- device layer 17- buried oxide layer 18- substrate
The high degree of symmetry structure of layer 19, wherein basal layer 15 and basal layer 19, buried oxide layer 16 and buried oxide layer 18 are respectively about device layer 17
That is SOI central plane is symmetrical.Symmetrical SOI Substrate specific size can change according to actual needs, in this embodiment,
The SOI overall thickness is about 415 μm, and the monocrystalline silicon that the basal layer 15 and basal layer 19 of SOI is 200 μm of thickness, device layer is thickness
Spend the monocrystalline silicon of 10 μm of crystal orientation (100), the silica that buried oxide layer 16 and buried oxide layer 18 are about 2 μm of thickness.The thickness of mass block 10
Degree is equal to the overall thickness of SOI Substrate, and center of gravity is located on the central plane of SOI Substrate namely the central plane of device layer 17；Substrate
The thickness of frame 12 is also equal to the overall thickness of SOI Substrate；For the building completely of cantilever beam 11 on device layer 17, thickness is equal to device
Layer 17, central plane is overlapped with the central plane of device layer 17.Because the micro-machine acceleration sensitive structure of the inhibition crosstalk
10 center of gravity of mass block is located on the central plane of cantilever beam 11, therefore non-sensitive axial acceleration will not cause additional torsion
Square, mass block will not generate additional torsion and sensitive axial displacement, thus play the purpose for inhibiting off-axis crosstalk.And
And by adjusting the thickness of device layer 17 and basal layer 15 and 19 in SOI, adjustable 10 structure of cantilever beam 11- mass block
Coefficient of elasticity completes the suppression of crosstalk under the premise of not reducing acceleration-displacement sensitivity of original machine tool acceleration sensitive structure
System.
Refering to Fig. 5 to Figure 12, the present invention also provides the micro Process of the micro-machine acceleration sensitive structure of the inhibition crosstalk
Manufacturing method, specifically includes the following steps:
Fig. 5: the reflectance coating of 10 upper surface of production quality block on the SOI Substrate upper surface；
Fig. 6: the top half of production quality block 10 and substrate 12 on the SOI Substrate upper surface；
Fig. 7: remove in the SOI Substrate exposure buries oxygen barrier layers 16；
Fig. 8: 11 figure of cantilever beam is made on the device layer 17 of the SOI Substrate；
Fig. 9: oxygen barrier layers 18 are buried in SOI Substrate described in pre-etching；
Figure 10: from the lower surface production quality block 10 of the SOI Substrate and the lower half portion of substrate 12；
Figure 11: remove in the SOI Substrate exposure buries oxygen barrier layers 18；
Figure 12: removing photoresist, anneal, and connects substrate pedestal 14；
Specifically, needing to carry out standard RCA clean to the SOI Substrate, and remove SOI before the step of carrying out Fig. 5
The oxide layer on surface.
Specifically, first using the double-deck glue as exposure mask, plated film is made by the way of photoetching when executing the step of Fig. 5
Mask pattern, then plate golden film and deielectric-coating respectively by the way of magnetron sputtering, non-mass is finally removed using stripping technology
The reflective coating in 10 region of block obtains the reflectance coating 13 of 10 upper surface of mass block.
Specifically, when executing the step of Fig. 6, first using thick glue as exposure mask, by the way of photoetching by mass block 10 and
The pattern transfer of substrate 12 recycles deep reactive ion beam etching to be etched to trench region and buries oxygen resistance to the upper surface SOI
Barrier 16 produces the top half of mass block 10 Yu substrate 12.
Specifically, being hindered when executing the step of Fig. 7 using the oxygen that buries that the silica erosion liquid (BOE) of buffering removes exposure
Barrier 16 is to device layer.
Specifically, first SPR glue is sprayed on the device layer 17 of slot bottom exposure with spray-bonding craft when executing the step of Fig. 8,
And guarantee that the thickness of glue carries out being completely covered for twice etching and corner and side wall enough, then carry out photoetching for 11 figure of cantilever beam
Shape is transferred on device layer 17, finally etches cantilever beam 11 using deep reactive ion beam.
Specifically, stopping using the 11 figure residue glue of cantilever beam of previous step as exposure mask to oxygen is buried when executing the step of Fig. 9
Layer 18 carry out pre-etchings, complete pre-etching until being etched to basal layer 19 until, this step can prevent reversely etch when by
Pressure and stress mismatch caused by the presence that thin layer buries oxygen barrier layers 18 avoid the explosion of structure from damaging.
Specifically, when executing the step of Figure 10, by reverse side alignment by the pattern transfer of mass block 10 and substrate 12 extremely
The lower surface of the SOI Substrate, and by deep reactive ion beam etching by trench region be etched to it is remaining bury oxygen barrier layers 18,
Produce the lower half portion of mass block 10 Yu substrate 12.
Specifically, being buried when executing the step of Figure 11 using the residual that the silica erosion liquid (BOE) of buffering removes exposure
Oxygen barrier layers 18.
Specifically, execute Figure 12 step when, by organic immersion and dry plasma remove photoresist in the way of remove residue glue
To avoid the damage of 10 structure of cantilever beam 11- mass block, then by reserved etching scribe line in the way of laser scribing
Scribing is completed, the production for completing to inhibit the micro-machine acceleration sensitive structure of crosstalk is finally connect with substrate 14.
In the present embodiment, it has been applied to specifically using the micro-machine acceleration sensitive structure of inhibition crosstalk of the invention
High-precise uniaxial optics micro-acceleration gauge in, specific Experimental equipment is as shown in figure 13.Wherein, by optical displacement measurement system
The uniaxial optical micro-acceleration gauge that system 1 and micro-machine acceleration sensory system 2 form is installed on precise rotating platform 20, and photoelectricity is visited
It surveys the signal that device 6 and 7 exports and obtains output voltage signal by the processing of calculus of differences circuit 22 and signal conditioning circuit 23
24.It is introduced by rotation adjustment knob 21Different size of acceleration, accelerometer sensitive can be applied to the accelerometer
The acceleration axially applied is a quadrature component of acceleration of gravity, likewise, changing accelerometer sensitive in rotating table
When axial acceleration, another quadrature component of acceleration of gravity is as being loaded into the non-sensitive axial acceleration of accelerometer
Also it can change simultaneously, influence the output signal 24 of the accelerometer.By the measurement method not only can detecte the optics it is micro- plus
The sensitive axial acceleration analysis sensitivity of speedometer, also available off-axis crosstalk is to the optics micro-acceleration gauge output signal
Influence.
Figure 14 is sensitive axially loaded using the uniaxial optical micro-acceleration gauge of former micro-machine acceleration sensitive structure
The graph of relation of acceleration and output voltage；Figure 15 adds for the uniaxial optical using former micro-machine acceleration sensitive structure is micro-
The graph of relation of speedometer non-sensitive axially loaded acceleration and output voltage；Figure 16 is using inhibition string of the invention
The uniaxial optical micro-acceleration gauge for the micro-machine acceleration sensitive structure disturbed sensitive axially loaded acceleration and output voltage
Graph of relation；Figure 17 is the micro- acceleration of uniaxial optical using the micro-machine acceleration sensitive structure of inhibition crosstalk of the invention
Degree counts the graph of relation of non-sensitive axially loaded acceleration and output voltage.The slope of curve in each figure has been reacted using not
With sensitivity of the optics micro-acceleration gauge to the acceleration of different directions of micro-machine acceleration sensitive structure.By Figure 14 and Figure 16
As it can be seen that the micro-machine acceleration sensitive structure proposed by the present invention for inhibiting crosstalk will not be reduced compared to original structure, the optics is micro- to be added
The sensitivity of speedometer acceleration analysis axial for sensitivity, sensitivity remain to maintain 1000V/g magnitude.By Figure 15 and figure
17 as it can be seen that the micro-machine acceleration sensitive structure proposed by the present invention for inhibiting crosstalk can be by optics micro-acceleration gauge for non-quick
The sensitivity for feeling axial acceleration declines about 13 times, is properly arrived at the purpose of clutter reduction.Actual clutter reduction effect can
Further to be promoted by the structural parameters of control SOI Substrate and raising technique accuracy.
In conclusion the present invention provides a kind of inhibition crosstalks applied in high-precise uniaxial optics micro-acceleration gauge
Micro-machine acceleration sensitive structure and its micro Process manufacturing method.The present invention is in a specially designed symmetrical five layers of SOI base of height
The structures such as on piece production quality block 10, cantilever beam 11 and substrate 12, the center of gravity of mass block 10 is accurately adjusted to cantilever beam layer
On central plane, and the clutter reduction structure with high symmetry is constructed with this, in the survey for not influencing optics micro-acceleration gauge
Under the premise of accuracy of measurement, off-axis crosstalk is fundamentally inhibited.Micro Process manufacturing method proposed by the present invention has been carried out example and has tested
It demonstrate,proves effective and can lay the foundation with IC process compatible for high-volume production.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (6)
1. inhibiting the micro-machine acceleration sensitive structure of crosstalk in a kind of high-precise uniaxial optics micro-acceleration gauge, feature exists
In: the micro-machine acceleration sensitive structure is located at immediately below diffraction grating in optics micro-acceleration gauge, can be with diffraction grating
Integration packaging is passive device；
The micro-machine acceleration sensitive structure includes: mass block, the crab-leg cantilever being connected with the mass block, cantilever beam
The silicon base of end connection, is plated in metal and media coating that mass top surface serves as reflectance coating；
The micro-machine acceleration sensitive structure for inhibiting crosstalk is being encapsulated under actual acceleration timing and a substrate phase
Connect to form the suspension structure of sensitive-mass block and cantilever beam;
The micro-machine acceleration sensitive structure is made by a kind of five layers of symmetrical SOI Substrate, and the substrate is from top to bottom
Respectively basal layer 1, bury oxygen barrier layers 1, device layer, bury oxygen barrier layers 2, basal layer 2, wherein basal layer 1 and basal layer 2 are thickness
Identical monocrystalline silicon is spent, device layer is the monocrystalline silicon of crystal orientation (100), and burying oxygen barrier layers 1 with oxygen barrier layers 2 are buried is that thickness is identical
Silica;
Wherein basal layer 1 and basal layer 2 bury oxygen barrier layers 1 and bury oxygen barrier layers 2 respectively about device layer i.e. SOI central plane
Symmetrically；Five layers of SOI Substrate overall thickness is 415 μm, the monocrystalline silicon that the basal layer 1 and basal layer 2 of SOI is 200 μm of thickness, device
Part layer is the monocrystalline silicon of 10 μm of crystal orientation (100) of thickness, buries oxygen barrier layers 1 and buries the silica that oxygen barrier layers 2 are 2 μm of thickness,
The thickness of mass block is equal to the overall thickness of SOI Substrate, and the center of central plane namely device layer that center of gravity is located at SOI Substrate is put down
On face；Wherein, mass block and the thickness of silicon base are equal to the thickness of five layers of SOI Substrate, and the thickness of cantilever beam is equal to monocrystalline silicon
The thickness of device layer；Single-crystal silicon device layer is located at the center of SOI Substrate.
2. micro-machine acceleration sensitive structure according to claim 1, it is characterised in that: mass block center of gravity is accurately located at outstanding
On arm beam central plane, optics micro-acceleration gauge acceleration sensitive axis direction is vertical with cantilever beam central plane.
3. micro-machine acceleration sensitive structure according to claim 1, it is characterised in that: the film layer of mass top surface plating
It is divided into two layers, upper layer is deielectric-coating, and lower layer is gold.
4. a kind of manufacturing method of micro-machine acceleration sensitive structure as described in claim 1, which is characterized in that including following step
It is rapid:
On the SOI Substrate using photoetching, plated film, stripping technology production quality block region reflectance coating；
Photoetching, the upper half of deep reactive ion beam etching production quality block and substrate are utilized on the basal layer 1 of the SOI Substrate
Point；
It is removed in the SOI Substrate using wet etching and buries oxygen barrier layers 1；
The figure of the cantilever beam is produced using glue spraying, photoetching, deep reactive ion beam etching on the device layer of the SOI Substrate
Shape, the thickness with a thickness of device layer of cantilever beam；In glue spraying on the device layer of the SOI Substrate, the thickness of glue will guarantee
Enough bear the deep reactive ion beam etching and the subsequent pre-etching to oxygen barrier layers 2 are buried of device layer thickness；Complete device layer
After the etching of cantilever beam structure, need to carry out pre-etching to the oxygen barrier layers 2 that bury under device layer to avoid subsequent backwards in progress
Cavity pressure difference and stress is excessive so that structure bursts, the residue glue that previous step is covered on cantilever beam figure at this time cannot be gone when etching
It removes, should be used as the reactive ion beam etching (RIBE) that exposure mask carries out next step；
The region buried in oxygen barrier layers 2 in addition to cantilever beam figure in the SOI Substrate is removed using reactive ion beam etching (RIBE)；
In the lower half that the basal layer 2 of the SOI Substrate passes through reverse side alignment, deep reactive ion beam etching production quality block and substrate
Part；
The remaining exposure in the SOI Substrate, which is removed, using wet etching buries oxygen barrier layers to discharge the cantilever beam and quality
Block structure；
Pass through annealing release residual stress and scribing；
Cantilever beam-mass block-underlying structure that the SOI Substrate is processed into is encapsulated with the substrate made in advance to be formed
Inhibit the micro-machine acceleration sensitive structure of crosstalk in the high-precise uniaxial optics micro-acceleration gauge.
5. manufacturing method according to claim 4, which is characterized in that the stripping process after completing cantilever beam structure release
In, it should be gone in conjunction with the mode that organic heating water bath and dry plasma remove photoresist divided by the intact of guarantee micro mechanical structure.
6. manufacturing method according to claim 4, which is characterized in that in scribing processes, lead to structure to avoid introducing
The factor of fracture etches scribe line in advance and completes final scribing with the mode of laser scribing.
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| CN105858585B (en) * | 2016-05-18 | 2018-02-16 | 浙江大学 | Sensitive structure, accelerometer and the manufacture method of superelevation acceleration displacement sensitivity |
| CN106841679B (en) * | 2017-01-11 | 2023-07-28 | 浙江大学 | High-precision micro-optical electromechanical system accelerometer resistant to large impact |
| CN106908624A (en) | 2017-03-24 | 2017-06-30 | 京东方科技集团股份有限公司 | A kind of acceleration sensitive device and accelerometer |
| CN107367627A (en) * | 2017-06-28 | 2017-11-21 | 华中光电技术研究所（中国船舶重工集团公司第七七研究所） | Integrated form superhigh precision uniaxial optical accelerometer |
| CN110542432B (en) * | 2019-08-13 | 2023-07-21 | 中国航空工业集团公司西安飞行自动控制研究所 | Single-shaft frame for split design and assembly and manufacturing method thereof |
| CN110865204B (en) * | 2019-11-19 | 2020-09-25 | 西北工业大学 | Open-loop type out-of-plane acceleration sensor and method based on surface plasmons |
| CN112433067A (en) * | 2020-11-16 | 2021-03-02 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Low-cross-axis crosstalk sensitive structure and manufacturing method thereof |
| CN113030513A (en) * | 2021-05-25 | 2021-06-25 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor |
| CN113311189A (en) * | 2021-05-25 | 2021-08-27 | 欧梯恩智能科技(苏州)有限公司 | Diffraction type silicon light acceleration sensor preparation process and obtained sensor |
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