CN110208576B - Micro-acceleration sensor with period telescopic variable diffraction grating - Google Patents

Micro-acceleration sensor with period telescopic variable diffraction grating Download PDF

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CN110208576B
CN110208576B CN201910527294.6A CN201910527294A CN110208576B CN 110208576 B CN110208576 B CN 110208576B CN 201910527294 A CN201910527294 A CN 201910527294A CN 110208576 B CN110208576 B CN 110208576B
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grating
mass block
diffraction grating
variable diffraction
etching
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CN110208576A (en
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李以贵
高磊
王欢
张成功
蔡金东
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Shanghai Institute of Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/03—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses by using non-electrical means

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Abstract

The invention relates to a micro-acceleration sensor with a period telescopic type variable diffraction grating, which comprises a base, a cantilever beam fixedly connected with the base, a mass block fixedly connected with the free end of the cantilever beam, and a measuring mechanism for measuring the displacement of the cantilever beam, wherein the measuring mechanism comprises a period telescopic type variable diffraction grating, a laser and a photoelectric detector, wherein the two ends of the period telescopic type variable diffraction grating are respectively connected with the base and the mass block; the laser and the photoelectric detector are respectively arranged on two sides of the period telescopic type variable diffraction grating. Compared with the prior art, the invention adopts the period telescopic type variable diffraction grating to measure the acceleration of the object, utilizes the characteristic of the error average effect of the optical grating, and has the advantages of high measurement precision, high response speed, high measurement efficiency, easier measurement of precision vibration and the like.

Description

Micro-acceleration sensor with period telescopic variable diffraction grating
Technical Field
The invention relates to the technical field of micro optical devices, in particular to a micro acceleration sensor with a period telescopic type variable diffraction grating.
Background
In recent years, silicon micro acceleration sensors have been used in many applications in life as a development direction of MEMS technology, and research on MOEMS acceleration sensors that combine high precision of optical measurement with MEMS technology has become an important research direction. The variable diffraction grating micro acceleration sensor can measure the acceleration of an object with extremely high measurement precision, is not only applied to a navigation inertial system, but also widely applied to the aspects of automobile safety systems, prospecting and earthquake detection, robot state control, biomedical treatment and the like. A typical silicon micro-acceleration sensor is based on mechanical vibration in the working principle, a system consisting of a mass block and an elastic element is used for sensing the acceleration of an object, when the object has the acceleration, the elastic element bends, the mass block generates micro displacement, and the acceleration can be calculated through Newton's second law. The detection sensitivity and reliability are important indexes of the sensor, the current silicon micro-acceleration sensor usually performs measurement based on the piezoelectric effect, the measurement precision of the measurement mechanism is not high, the sensitivity is low, and when the acceleration is small, the displacement of the mass block is small, so that the existing MEMS technology cannot perform measurement.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art and to provide a micro acceleration sensor with a periodically retractable variable diffraction grating.
The purpose of the invention can be realized by the following technical scheme:
a micro-acceleration sensor with a period telescopic type variable diffraction grating comprises a base, a cantilever beam fixedly connected with the base, a mass block fixedly connected with the free end of the cantilever beam, and a measuring mechanism for measuring the displacement of the cantilever beam, wherein the measuring mechanism comprises a period telescopic type variable diffraction grating, a laser and a photoelectric detector, wherein the two ends of the period telescopic type variable diffraction grating are respectively connected with the base and the mass block; the laser and the photoelectric detector are respectively arranged on two sides of the period telescopic type variable diffraction grating.
Compared with the variable grating acceleration sensor with the grating vertically moving in the prior art, the variable grating acceleration sensor comprises a concave base formed below the variable grating acceleration sensor, a rectangular mass block and a cantilever beam adhered on the upper part of the rectangular mass block, the grating capable of vertically moving up and down is fixed above the mass block, a light source and a photoelectric detector are arranged above the grating, and the packaging process of the variable grating acceleration sensor is based on an LED packaging process. Compared with the variable grating acceleration sensor, the variable grating acceleration sensor adopts the projection type grating with the grating period changed, and can better sense the displacement of the mass block. Compared with the scheme of changing the distance between the grating and the light source in the prior art, the diffraction spot information change caused by the change of the grating period is larger, and the sensitivity is higher.
The period telescopic type variable diffraction grating comprises a plurality of parallel gratings which are arranged in parallel, and adjacent parallel gratings are connected through a spring; and the end spring close to the mass is connected with the mass through the grating handle.
The grating pitch of the parallel grating is 0.05-0.5 mm, and preferably 0.2 nm.
The length of the parallel grating is 5-15 mm, preferably 10 mm; the width is 2-12 mm, preferably 6 mm.
The invention optimizes the structural parameters of the parallel grating, selects the coarse grating with larger grating pitch, is beneficial to light diffraction, enlarges the measuring range and can measure the object with high motion. Meanwhile, the sensor is small in size, light in weight, high in integration level, high in response speed, high in sensitivity and smart in structure. Secondly, the sensor has low driving voltage and low energy consumption. Finally, the sensor is low in cost, depends on mature silicon processing technology, and can realize mass production.
When the acceleration direction of an object is upward, the displacement direction of the mass block is downward, and the distance between the gratings is increased along with the increase of the acceleration; when the acceleration direction of the object is downward, the displacement direction of the mass block is upward, and the grating distance is reduced along with the reduction of the acceleration; the displacement of quality piece can change the cycle of parallel grating promptly, and the diffraction facula changes, utilizes photoelectric detector to detect the diffraction light intensity, through amplifier circuit's signal processing to obtain the information of displacement, further survey the value of acceleration.
The invention improves the period-telescopic variable diffraction grating, a plurality of parallel gratings are arranged and connected through springs, the displacement generated by the mass block acts on the parallel gratings by applying acceleration to an object, the springs deform under stress, the grating period can be changed more conveniently, and the elastic deformation can be recovered. Because the grating changes periodically, the change is received by the photoelectric detector through the diffraction light spot, the change is obvious, and the sensitivity is high. Meanwhile, the error averaging effect of the diffraction grating can improve the measurement precision, which is incomparable with common MEMS devices.
The preparation method of the parallel grating comprises the following steps: providing a silicon substrate; passing SiO over said silicon substrate2Deposition method for preparing SiO2A film; in SiO2Coating high-viscosity positive photoresist on the film; carrying out photoetching operation by using an ultraviolet exposure device, and then placing the sample in a developing solution for development; by reactive ion etchingEtching of SiO2A film; and etching the sample by adopting a deep reactive ion etching method until the surface of the sample has a hollow structure, thereby obtaining the parallel grating.
The thickness of the silicon substrate is 0.1-0.5 mm, and preferably 0.2 mm; the SiO2The thickness of the film is 300-1000 nm, preferably 500 nm; the coating thickness of the positive photoresist is 1500-3500 nm, preferably 2500 nm; the developing solution is an NMD-3 developing solution; the etching liquid used in the reactive ion etching method is hydrofluoric acid solution; the etching gas used in the deep reactive ion etching method is SF6And C4F8The gas mixture of (1).
The silicon substrate is an n-type silicon wafer.
The preparation method of the cantilever beam comprises the following steps: providing a cantilever SOI substrate for photoetching treatment, and spin-coating photoresist on the cantilever SOI substrate; transferring a designed mask plate structure pattern to the surface of a cantilever SOI substrate of a mask plate by utilizing a cantilever structure mask plate and adopting a photoetching and developing technology; and etching the SOI substrate of the cantilever beam by using an ICP (inductively coupled plasma) etching technology to obtain the cantilever beam.
The preparation method of the mass block comprises the following steps: providing a mass block SOI substrate for photoetching treatment, and spin-coating photoresist on the mass block SOI substrate; preparing a mass block mask plate for photoetching, aligning the mass block mask plate with an alignment mark on a cantilever beam mask plate, and transferring a designed mass block mask plate structure pattern to the surface of a mass block SOI substrate of the mask plate by utilizing photoetching and developing technologies; etching the SOI substrate of the mass block by using an ICP (inductively coupled plasma) etching technology; and etching the buried oxide layer of the SOI substrate of the mass block by using a wet etching process to obtain the mass block.
The cantilever beam is equipped with two, set up respectively in the both sides of quality piece.
The measurement principle of the invention is as follows: the laser is used for emitting light, a diffraction light spot is formed after the light passes through the grating, when the object has acceleration, the elastic element is bent, the mass block is displaced, the grating period is changed, the angle of the diffraction light spot is changed, the output light intensity received by the detector is changed, and the displacement information of the mass block is obtained after the signal processing of the amplifying circuit, so that the acceleration information of the object can be obtained.
Compared with the prior art, the invention has the following advantages:
(1) based on the error average effect of the grating, the measurement precision of the invention is much higher than that of the traditional MEMS acceleration sensor, and the response speed is higher based on the measurement of the light intensity change of diffraction spots; the precision vibration can be measured more efficiently and more easily;
(2) the invention has compact integral structure combination, small volume, simple processing and convenient installation and fixation.
(3) The processing method of the parallel grating, the cantilever beam and the mass block is simple and is very suitable for integrated manufacturing.
(4) The invention can be applied to the fields of aerospace, biomedical treatment, Internet of things and the like, and has wide application.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of a periodically retractable variable diffraction grating according to the present invention;
FIG. 3 is a schematic diagram of a parallel grating structure according to the present invention;
in the figure, 1 is a laser, 2 is a period telescopic type variable diffraction grating, 3 is a photoelectric detector, 4 is a cantilever beam, 5 is a mass block, 6 is a base, 21 is a parallel grating, 22 is a spring, 23 is a grating handle, 7 is a silicon substrate, 8 is SiO2Film, 9 is a positive photoresist film.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
Example 1
A micro-acceleration sensor with a period telescopic type variable diffraction grating is shown in figure 1 and comprises a base 6, a cantilever beam 4 fixedly connected with the base 6, a mass block 5 fixedly connected with the free end of the cantilever beam 4 and a measuring mechanism for measuring the displacement of the cantilever beam 4, wherein the measuring mechanism comprises a period telescopic type variable diffraction grating 2, a laser 1 and a photoelectric detector 3, wherein the two ends of the period telescopic type variable diffraction grating are respectively connected with the base 6 and the mass block 5; the laser 1 and the photoelectric detector 3 are respectively arranged at two sides of the periodic telescopic variable diffraction grating 2, the two cantilever beams 4 are respectively arranged at two sides of the mass block 5, and the periodic telescopic variable diffraction grating 2, the cantilever beams 4 and the mass block 5 are all processed by silicon materials.
In this embodiment, the period telescopic type variable diffraction grating 2 includes a plurality of parallel gratings 21 arranged in parallel, and the adjacent parallel gratings 21 are connected by a spring 22; and the spring 22 at the end is connected with the mass 5 through the grating handle 23, as shown in fig. 2; the parallel grating 21 is transmission type, and the grating pitch is 0.2 nm; the grating period can be enlarged or shortened by pulling or pushing a grating handle connected with the mass block, and a relatively large grating interval is designed for measuring an object moving at a high speed; in order to prevent the fragility of the grating, the thickness of an etching silicon wafer for manufacturing the grating is designed to be 0.2 mm; a structure with coarse grating lines will help to efficiently diffract light when the incident light is almost perpendicular to the grating lines on the grating plane. The dimensions of the parallel grating 21 are 10mm x 6 mm. The grating handle 23 is made of silicon and has a rectangular structure with a cavity.
In the embodiment, the photoelectric detector 3 is used as a sensitive element to sense and transmit acceleration information, and the photoelectric detector 3 is used to detect the light intensity change of the diffraction light spot to obtain the acceleration of the object. The entire process can be completely fabricated by microfabrication methods based on semiconductor silicon materials.
When an object is accelerated, the generated inertia enables the mass block and the base of the acceleration sensor to generate relative displacement, the cantilever beam bends, the grating handle connected with the mass block generates displacement, and the magnitude of the displacement is directly related to the magnitude of the acceleration. When the acceleration direction of the object is upward, the displacement direction of the mass block is downward, and the grating distance is increased along with the increase of the acceleration; when the acceleration direction of the object is downward, the displacement direction of the mass block is upward, and the grating distance is reduced along with the reduction of the acceleration. Acceleration can be accurately measured by the change in diffracted light intensity caused by the change in grating pitch. The light flux from the laser to the photodetector is changed by the change of the periodic variable grating pitch.
The preparation method of the embodiment comprises the steps of respectively manufacturing the parallel grating 21, the cantilever beam 4 and the mass block 5, then assembling the parallel grating, the cantilever beam 4 and the mass block with related parts, and connecting the parallel grating, the cantilever beam and the mass block through dispensing and packaging.
In this embodiment, the method for manufacturing the parallel grating 21 includes the steps of, as shown in fig. 3, manufacturing the parallel grating by using a mask; providing a silicon substrate 7, wherein the thickness of the silicon substrate 7 is 0.2mm, and an n-type 100 wafer is adopted; by SiO on a silicon substrate 72Deposition method for preparing SiO with thickness of 500nm2A film 8, such as a structure a formed by oxidizing the silicon wafer in FIG. 3; in SiO2Coating high-viscosity positive photoresist (OFPR-800, 450cp) on the film 8 to form a positive photoresist film 9, wherein the coating thickness of the positive photoresist is 2500 nm; performing photoetching operation by using ultraviolet exposure equipment (Kall Suss, MA-8), then placing the sample in a developing solution for development, and developing the pattern of a mask plate in an NMD-3 developing solution, such as a b structure formed by performing first photoetching and etching on a silicon wafer in the figure 3; etching SiO by reactive ion etching method2Film 8, in particular etching of SiO with HF solution2C structure in fig. 3; etching the sample by deep reactive ion etching until the surface of the sample has a hollow structure to obtain a parallel grating 21, such as d structure in FIG. 3, wherein the etching gas used in the deep reactive ion etching is SF6And C4F8The gas mixture of (1).
The preparation method of the cantilever beam 4 comprises the following steps: firstly, providing a cantilever beam SOI substrate for photoetching treatment, cleaning and pre-baking the cantilever beam SOI substrate and coating photoresist in a rotating way, wherein the photoresist rotating speed is 3000rad/s, the photoresist time is 45s, and the thickness of a glue layer is 3 mu m; secondly, preparing a mask plate for photoetching, and transferring a designed mask plate structure pattern to the surface of a cantilever beam SOI substrate of the mask plate by utilizing photoetching and developing technologies; and finally, etching the cantilever SOI substrate by an ICP (inductively coupled plasma) process, wherein the etching rate is about 0.8 mu m/min, and the etching time is about 13 min.
The preparation method of the mass block 5 comprises the following steps: firstly, providing a mass block SOI substrate for photoetching treatment, cleaning and pre-baking the mass block SOI substrate, and spin-coating photoresist, wherein the spin-coating rotation speed is 3000rad/s, the spin-coating time is 45s, and the thickness of a glue layer is 3 mu m; secondly, preparing a mask plate for photoetching, aligning the mask plate of the mass block with an alignment mark of the mask plate of the cantilever beam, and transferring a designed mask plate structure pattern to the surface of the mass block SOI substrate of the mask plate by utilizing photoetching and developing technologies; then, etching the mass block SOI substrate by using an ICP (inductively coupled plasma) process, wherein the etching rate is about 0.8 mu m/min, and the etching time is about 50 min; and finally, etching the buried oxide layer by using a wet etching process, wherein the etching solution is 6g (3ml) of ammonium fluoride and 9ml of deionized water, and the etching time is about 10 min.
The sensitive element of the periodic telescopic type variable diffraction grating micro acceleration sensor manufactured by the embodiment is a photoelectric detector, the displacement change of the mass block is measured by adopting a new method, and the method is suitable for high-precision acceleration measurement. Due to the error average effect of the grating, the measurement precision is much higher than that of the traditional MEMS acceleration sensor, and structural innovation is also made on the variable grating; the embodiment can be applied to the fields of aerospace, biomedical treatment, Internet of things and the like. In conclusion, the sensor is superior to the conventional silicon microsensor, and the combination with high precision of the optical device is a good research direction.
Example 2
The present embodiment is a micro acceleration sensor with a period telescopic type variable diffraction grating, and the main structure of the micro acceleration sensor is the same as that of embodiment 1, except that the structural parameters of a parallel grating 21 are the same, and the grating pitch of the parallel grating 21 is 0.05 mm; the length is 5mm and the width is 2 mm.
The specific process parameters for preparing the parallel grating 21 are different, and specifically include:
the parallel lightThe gate is made by using a mask; providing a silicon substrate 7, wherein the thickness of the silicon substrate 7 is 0.1mm, and an n-type 100 wafer is adopted; by SiO on a silicon substrate 72Deposition method for preparing SiO with thickness of 300nm2A film 8; in SiO2Coating high-viscosity positive photoresist (OFPR-800, 450cp) on the film 8 to form a positive photoresist film 9, wherein the coating thickness of the positive photoresist is 1500 nm; carrying out photoetching operation by using ultraviolet exposure equipment (Kall Suss, MA-8), then placing the sample in a developing solution for development, and developing the pattern of the mask plate in an NMD-3 developing solution; etching SiO by reactive ion etching method2Film 8, in particular etching of SiO with HF solution2(ii) a Etching the sample by adopting a deep reactive ion etching method until the surface of the sample has a hollow structure to obtain the parallel grating 21, wherein etching gas used in the deep reactive ion etching method is SF6And C4F8The gas mixture of (1).
Example 3
The present embodiment is a micro acceleration sensor with a period telescopic type variable diffraction grating, and the main structure of the micro acceleration sensor is the same as that of embodiment 1, except that the structural parameters of a parallel grating 21 are the same, and the grating pitch of the parallel grating 21 is 0.5 mm; the length is 15mm and the width is 12 mm.
The specific process parameters for preparing the parallel grating 21 are different, and specifically include:
the parallel grating is made by a mask; providing a silicon substrate 7, wherein the thickness of the silicon substrate 7 is 0.5mm, and an n-type 100 wafer is adopted; by SiO on a silicon substrate 72Deposition method for preparing SiO with thickness of 1000nm2A film 8; in SiO2Coating high-viscosity positive photoresist (OFPR-800, 450cp) on the film 8 to form a positive photoresist film 9, wherein the coating thickness of the positive photoresist is 3500 m; carrying out photoetching operation by using ultraviolet exposure equipment (Kall Suss, MA-8), then placing the sample in a developing solution for development, and developing the pattern of the mask plate in an NMD-3 developing solution; etching SiO by reactive ion etching method2Film 8, in particular etching of SiO with HF solution2(ii) a Etching the sample by deep reactive ion etching until the surface of the sample has a hollow structure to obtain a parallel grating 21, and deep reactive ion etchingThe etching gas used in the sub-etching method is SF6And C4F8The gas mixture of (1).
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (9)

1. A micro-acceleration sensor with a period telescopic type variable diffraction grating comprises a base (6), a cantilever beam (4) fixedly connected with the base (6), a mass block (5) fixedly connected with the free end of the cantilever beam (4), and a measuring mechanism for measuring the displacement of the cantilever beam (4),
the measuring mechanism comprises a periodic telescopic variable diffraction grating (2) with two ends respectively connected with the base (6) and the mass block (5), and a laser (1) and a photoelectric detector (3) which are fixed on the base (6); the laser (1) and the photoelectric detector (3) are respectively arranged on two sides of the periodic telescopic variable diffraction grating (2);
the period telescopic type variable diffraction grating (2) comprises a plurality of parallel gratings (21) which are arranged in parallel, and the adjacent parallel gratings (21) are connected through springs (22); and an end spring (22) close to the mass (5) is connected with the mass (5) through a grating handle (23);
the laser (1) is used for emitting light, a diffraction spot is formed after the light passes through the grating, when the object has acceleration, the spring (22) bends, the mass block (5) displaces, the grating period changes, the angle of the diffraction spot changes, the output light intensity received by the photoelectric detector (3) changes, and the displacement information of the mass block is obtained after the signal processing of the amplifying circuit, so that the acceleration information of the object can be obtained.
2. The micro acceleration sensor with the periodically retractable type variable diffraction grating as claimed in claim 1, wherein the grating pitch of the parallel grating (21) is 0.05-0.5 mm.
3. The micro-acceleration sensor with the periodically telescopic variable diffraction grating as claimed in claim 1, wherein the length of the parallel grating (21) is 5-15 mm; the width is 2-12 mm.
4. The micro acceleration sensor with the periodically retractable variable diffraction grating of claim 1,
the preparation method of the parallel grating (21) comprises the following steps: providing a silicon substrate (7); on said silicon substrate (7) by SiO2Deposition method for preparing SiO2A film (8); in SiO2Coating high-viscosity positive photoresist on the film (8); carrying out photoetching operation by using an ultraviolet exposure device, and then placing the sample in a developing solution for development; etching SiO by reactive ion etching method2A film (8); and etching the sample by adopting a deep reactive ion etching method until the surface of the sample has a hollow structure, thereby obtaining the parallel grating (21).
5. The micro acceleration sensor with the periodically telescopic type variable diffraction grating as claimed in claim 4, wherein the thickness of the silicon substrate (7) is 0.1-0.5 mm; the SiO2The thickness of the film is 300-1000 nm; the coating thickness of the positive photoresist is 1500-3500 nm; the developing solution is an NMD-3 developing solution; the etching liquid used in the reactive ion etching method is hydrofluoric acid solution; the etching gas used in the deep reactive ion etching method is SF6And C4F8The gas mixture of (1).
6. The micro acceleration sensor with the periodically telescoping variable diffraction grating according to claim 4, characterized in that the silicon substrate (7) is an n-type silicon wafer.
7. The micro acceleration sensor with the period telescopic type variable diffraction grating is characterized in that the cantilever beam (4) is prepared by the following steps:
providing a cantilever SOI substrate for photoetching treatment, and spin-coating photoresist on the cantilever SOI substrate;
transferring a designed mask plate structure pattern to the surface of a cantilever SOI substrate of a mask plate by utilizing a cantilever structure mask plate and adopting a photoetching and developing technology;
and etching the SOI substrate of the cantilever beam by using an ICP (inductively coupled plasma) etching technology to obtain the cantilever beam (4).
8. The micro-acceleration sensor with the periodically telescopic type variable diffraction grating of claim 7, wherein the mass block (5) is prepared by the following steps:
providing a mass block SOI substrate for photoetching treatment, and spin-coating photoresist on the mass block SOI substrate;
preparing a mass block mask plate for photoetching, aligning the mass block mask plate with an alignment mark on a cantilever beam mask plate, and transferring a designed mass block mask plate structure pattern to the surface of a mass block SOI substrate of the mask plate by utilizing photoetching and developing technologies;
etching the SOI substrate of the mass block by using an ICP (inductively coupled plasma) etching technology;
and etching the buried oxide layer of the SOI substrate of the mass block by using a wet etching process to obtain the mass block (5).
9. The micro-acceleration sensor with the periodically telescopic variable diffraction grating of claim 1, wherein two cantilever beams (4) are arranged on two sides of the mass block (5).
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CN101231345A (en) * 2006-08-02 2008-07-30 中国石油大学(北京) Radiodetector for seismic exploration and transrectification system thereof
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