CN104198763A - TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer - Google Patents
TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer Download PDFInfo
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- CN104198763A CN104198763A CN201410475924.7A CN201410475924A CN104198763A CN 104198763 A CN104198763 A CN 104198763A CN 201410475924 A CN201410475924 A CN 201410475924A CN 104198763 A CN104198763 A CN 104198763A
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Abstract
The invention discloses a TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer. The accelerator is composed of an X-axis structure, a Y-axis structure and a Z-axis structure; the three structures independent of one another are hermetically arranged within a same sealed cavity; the three structures are all fixed on a central TSV; electrical signals of moving weights of the three structures are connected together through an MEMS central anchor point and are led out of the sealed cavity through the central TSV; a fixed electrode of the X-axis structure and that of the Y-axis structure are electrically isolated from the moving weight X and the moving weight Y through isolators, respectively; the sides of the moving electrodes and the sides of the fixed electrodes are used as induction capacitors for the X-axis structure and the Y-axis structure; one moving weights and a Z-axis fixed electrode are used as induction capacitors for the Z-axis structure. The X-axis structure, the Y-axis structure and the Z-axis structure are fixed on the same central TSV, mechanical stress caused by temperature changes in using the accelerometer is small, and the accelerometer is good in performance, low in cost and high in market competitiveness.
Description
Technical field
The invention belongs to MEMS chip design field, specifically relate to a kind of 3 axis MEMS accelerometer of TSV wafer level packaging.
Background technology
MEMS(Micro-Electro-Mechanical Systems) be the abbreviation of MEMS (micro electro mechanical system), MEMS manufacturing technology is utilized Micrometer-Nanometer Processing Technology, particularly semiconductor wafer manufacturing technology, produce various MIniature machinery structure, in conjunction with special control integration circuit (ASIC), form the MEMS components and parts such as intelligentized microsensor, microactrator, micro-optical device.MEMS components and parts have advantages of that volume is little, cost is low, reliability is high, strong, low in energy consumption, the intelligent degree of anti-adverse environment ability is high, easily more accurate, easy of integration, be widely used in the consumer electronics product taking smart mobile phone as representative.Taking smart mobile phone as example, it uses the MEMS components and parts such as gyroscope, accelerometer, altitude gauge, microphone, digital compass, tuned antenna, wave filter.And mems accelerometer is wherein most widely used, each smart mobile phone, even functional mobile phone all standard configuration have mems accelerometer.Along with the competition in MEMS components and parts market is more and more fierce, and the significantly growth of wearable electronic product taking intelligent watch as representative, client requires more and more higher to MEMS components and parts, and volume is little, low in energy consumption, stable performance has become basic demand.For further dwindling the volume of MEMS chip, reducing costs TSV(Through Silicon Via, silicon through hole) the MEMS chip of wafer level packaging becomes inexorable trend.
TSV wafer level packaging is clipped in the middle mobilizable MEMS structure exactly with two cover plates, on two cover plates, be manufactured with cavity, form an annular seal space freely movable for MEMS structure, on a cover plate therein, there are some TSV, TSV is a part for cover plate, but has separation layer electrical isolation with other parts of cover plate.One end and the MEMS structural bond of TSV in annular seal space is combined, other end connection metal, thus the signal of MEMS structure is drawn from annular seal space.But because cover sheet thickness is conventionally more than 100 μ m, and consider the stress problem in bonding technology process, TSV cannot do very littlely, between TSV, also must keep certain spacing, in traditional 3 axis MEMS accelerometer design, the movable mass of the MEMS structure of each axle, just, negative induction electrode is separately fixed on three TSV, TSV spacing is larger again, in use thermal expansion meeting produces gravitation, thereby cause MEMS structure generation deformation, spacing is larger, deformation is larger, the performance of accelerometer, particularly zero point, value repeatability was just poorer, this has become a large problem of current 3 axis MEMS accelerometer design.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, a kind of 3 axis MEMS accelerometer of TSV wafer level packaging is provided, X, Y, Z three-axis structure are fixed on to same center TSV upper, thereby the stress problem of having avoided thermal expansion to cause is enhanced product performance greatly.
For solving the problems of the technologies described above, the invention provides a kind of 3 axis MEMS accelerometer of TSV wafer level packaging, by being sealed in same annular seal space, and separate X-axis structure, Y-axis structure and Z axis structure composition, X-axis structure, Y-axis structure and Z axis structure are all fixed on the TSV of center, the X movable mass of X-axis structure, the electric signal of the Y movable mass of Y-axis structure and the Z movable mass of Z axis structure links together by MEMS center anchor point, and draw in annular seal space by center TSV, the fixed electorde of X-axis structure and Y-axis structure by spacing block respectively with X movable mass, the isolation of Y movable mass electricity, X-axis structure and Y-axis structure utilize the side of movable electrode and fixed electorde as inductance capacitance, Z axis structure utilizes movable mass and Z axis fixed electorde as inductance capacitance, X-axis structure and Y-axis structure lay respectively at the both sides of MEMS center anchor point, and Z axis structure is positioned at the outside of X-axis structure and Y-axis structure.
Described X movable mass is fixed on X cantilever by X-axis spring, and and between X cantilever, there is spacing block electricity to isolate, X cantilever is fixed on the TSV of center by MEMS center anchor point, between X cantilever and MEMS center anchor point, there is spacing block to carry out electricity isolation, X movable mass can move along directions X, on X movable mass, be manufactured with X movable electrode, on X cantilever, be manufactured with X fixed electorde, X movable electrode and X fixed electorde composition X-axis inductance capacitance, its signal is drawn from annular seal space by corresponding X-axis TSV, between X-axis TSV and corresponding X cantilever, is connected by X conductive arm;
Described Y movable mass is fixed on Y cantilever by Y-axis spring, and and between Y cantilever, there is spacing block to carry out electricity isolation, Y cantilever is fixed on the TSV of center by MEMS center anchor point, between Y cantilever and MEMS center anchor point, there is spacing block to carry out electricity isolation, Y movable mass can move along Y-direction, on Y movable mass, be manufactured with Y movable electrode, on Y cantilever, be manufactured with Y fixed electorde, Y movable electrode and Y fixed electorde composition Y-axis inductance capacitance, its signal is drawn from annular seal space by corresponding Y-axis TSV, between Y-axis TSV and corresponding Y cantilever, is connected by Y conductive arm;
Described Z axis structure is a seesaw plate structure, Z movable mass is fixed on the anchor point of MEMS center by Z axis spring, it is asymmetric that Z movable mass is distributed in the figure of two sides of Z axis spring, Z movable mass can rotate along Z axis spring, Z movable mass and Z fixed electorde composition Z axis inductance capacitance, Z fixed electorde itself is exactly the TSV that area is larger, and its signal can directly be drawn.
Described X cantilever comprises X+ cantilever and X-cantilever, has the isolation of isolating trenches electricity between X+ cantilever and X-cantilever, is fixed with X+ fixed electorde on X+ cantilever, is fixed with X-fixed electorde on X-cantilever.
Described Y cantilever comprises Y+ cantilever and Y-cantilever, has the isolation of isolating trenches electricity between Y+ cantilever and Y-cantilever, is fixed with Y+ fixed electorde on Y+ cantilever, is fixed with Y-fixed electorde on Y-cantilever.
Described X-axis TSV comprises X+TSV and X-TSV, X cantilever comprises X+ cantilever and X-cantilever, and X+TSV is fixed on X+MEMS anchor point, and X-TSV is fixed on X-MEMS anchor point, between X+TSV and X+ cantilever, be connected by X+ conductive arm, between X-TSV and X-cantilever, be connected by X-conductive arm.
Described Y-axis TSV comprises Y+TSV and Y-TSV, Y cantilever comprises Y+ cantilever and Y-cantilever, and Y+TSV is fixed on Y+MEMS anchor point, and Y-TSV is fixed on Y-MEMS anchor point, between Y+TSV and Y+ cantilever, be connected by Y+ conductive arm, between Y-TSV and Y-cantilever, be connected by Y-conductive arm.
Because problem maximum in the use procedure of 3 axis MEMS accelerometer is zero drift, conventionally caused by mechanical stress, mechanical stress is delivered on MEMS substrate by scolder and encapsulating material by pcb board, cause the deformation of MEMS substrate, the deformation of MEMS substrate causes again the deformation of MEMS structure, thereby produces MEMS zero drift.Distance between the deformation of MEMS structure and each TSV of fixing MEMS structure is directly proportional.The 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention is fixed on the structure of X, Y, tri-axles of Z on same center TSV, dwindled MEMS structure and MEMS substrate contact area,, good product performance little on the impact of MEMS structure by the mechanical stress that in product use procedure, temperature variation causes, cost is low, the market competitiveness is strong.
Brief description of the drawings
Fig. 1 is the structural representation of the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 2 is the structural representation of Y-axis structure in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 3 is the structural representation of X-axis structure in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 4 is the structural representation of Z axis structure in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 5 is the schematic diagram of Z axis fixed electorde in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 6 is the cut-open view of Z inductance capacitance unit in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 7 is the vertical view of center TSV in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Fig. 8 is the cut-open view of center TSV in the 3 axis MEMS accelerometer of TSV wafer level packaging of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
The 3 axis MEMS accelerometer of TSV wafer level packaging, as shown in Figure 1, establishing is positive Y-direction vertically upward, and level is to the right positive directions X, and vertically paper is positive Z direction dorsad; The 3 axis MEMS accelerometer of TSV wafer level packaging is made up of the Y-axis structure 10, X-axis structure 30 and the Z axis structure 40 that are fixed on the TSV50 of center, and entirety is rectangle, and Y-axis structure 10, X-axis structure 30 are positioned at inner side, and Z axis structure 40 is positioned at outside.
Y-axis structure 10 as shown in Figure 2, MEMS center anchor point 55 is bonded on the TSV50 of center, for whole Y-axis structure 10 provides mechanical support, one end of the Y+ cantilever 13 of Y-axis structure 10 and Y-cantilever 14Kao center TSV50 is connected with the first linking arm 52 by spacing block 17a, the first linking arm 52 connects MEMS center anchor point 55, like this, Y+ cantilever 13 and Y-cantilever 14 are just fixed on MEMS center anchor point 55, described spacing block 17a only provides mechanical connection, do not provide electrical connection, so Y+ cantilever 13 and Y-cantilever 14 are not electrically connected with MEMS center anchor point 55.Due to Y+ cantilever 13 and Y-cantilever 14 sizes larger, bandpass is more than 10 μ m, so can there is not mechanical shift with respect to MEMS center anchor point 55 in the time having acceleration, also can not there is not mechanical shift with respect to MEMS center anchor point 55 with the fixed electorde 14a being connected with Y-cantilever 14 in the fixed electorde 13a being connected with Y+ cantilever 13; Y+ cantilever 13 and Y-cantilever 14 are isolated by isolating trenches 15, not electrical connection between them; The other end of Y+ cantilever 13 and Y-cantilever 14 is connected Y linking arm 18 by spacing block 17b, and spacing block 17b only provides mechanical connection, and electrical connection is not provided, so are electrical isolations between Y linking arm 18 and Y+ cantilever 13 and Y-cantilever 14.Y movable mass 12 is connected with Y linking arm 18 with Y-axis spring 11b by Y-axis spring 11a, be connected with MEMS center anchor point 55 with Y-axis spring 11d by Y-axis spring 11c, because Y-axis spring 11a, 11b, 11c, 11d and Y movable mass 12 and MEMS center anchor point 55 are in same MEMS layer, so between Y movable mass 12 and MEMS center anchor point 55, be electrically connected, but with Y+ cantilever 13, Y-cantilever 14 without being electrically connected.Y-axis spring 11a, 11b, 11c, 11d, for Y movable mass 12 provides along the ability of Y direction activity, suppress the activity of movable mass 12 along X-direction and Z-direction simultaneously.Y+ movable electrode 13b is produced on Y movable mass 12, and Y+ fixed electorde 13a is produced on Y+ cantilever 13, and vertical with Y+ cantilever 13; Y+ movable electrode 13b and a Y+ inductance capacitance unit of Y+ fixed electorde 13a composition, the parallel side that Y+ movable electrode 13b and Y+ fixed electorde 13a form has formed the Y+ parallel electrode plate of inductance capacitance, the space D of parallel electrode plate
1be generally 1/10 to 1/30 of MEMS layer thickness.Y-movable electrode 14b is produced on Y movable mass 12, and Y-fixed electorde 14a is manufactured on Y-cantilever 14, and vertical with Y-cantilever 14; Y-movable electrode 14b and a Y-inductance capacitance unit of Y-fixed electorde 14a composition, the parallel side that Y-movable electrode 14b and Y-fixed electorde 14a form has formed the Y-parallel electrode plate of inductance capacitance, and the spacing of parallel electrode plate is also D
2.In the time having Y-direction acceleration to be applied in Y-axis structure 10, Y+ movable electrode 13b moves with respect to MEMS center anchor point 55 along Y direction with Y movable mass 12 with Y-movable electrode 14b, Y+ fixed electorde 13a and Y-fixed electorde 14a can not move with respect to MEMS center anchor point 55, parallel-plate electrode space D
1, D
2will respective change, taking positive Y-axis acceleration as example, due to inertia effect, Y+ movable electrode 13b, Y-movable electrode 14b move to negative Y direction with respect to MEMS center anchor point with Y movable mass 12, the Y+ electrode separation D between Y+ movable electrode 13b and Y+ fixed electorde 13a
1be reduced into (D
1-δ), it is large that Y+ electric capacity becomes; Meanwhile, the Y-electrode separation D between Y-movable electrode 14b and Y-fixed electorde 14a
2become greatly (D
2+ δ), Y-electric capacity diminishes; In a Y-axis structure 10, there are multiple Y+ capacitive sensing unit and Y-capacitive sensing unit, suppose electrode separation D
1=D
2=D, has n Y+ capacitive sensing unit and n Y-capacitive sensing unit, and the area of each parallel-plate electrode is S
y, the capacitive sensing signal of Y-axis structure 10 is:
，
Wherein ε is the specific inductive capacity of gas medium in annular seal space, approaches 1, ε
0for the permittivity of vacuum of gas medium in annular seal space, due to D
2compare δ
2much bigger, large 6 more than the order of magnitude, so denominator can be reduced to D conventionally
2, the capacitive sensing signal of Y-axis structure 10 just can be reduced to:
。
After Y+ capacitive sensing signal is responded to by Y+ fixed electorde 13a, be transferred on MEMS anchor point 20a by Y+ cantilever 13 and Y+ conductive arm 19a, MEMS anchor point 20a is bonded on TSV22a, Y+ capacitive sensing signal is just derived annular seal space by TSV22a like this, described Y+ conductive arm 19a is formed by the etching of MEMS layer, very soft, can be by the stress transfer of TSV22a to Y+ cantilever 13, thus ensure the signal quality of Y-axis structure 10 in use procedure.Equally, after Y-capacitive sensing signal is responded to by Y-fixed electorde 14a, be transferred on MEMS anchor point 20b by Y-cantilever 14 and Y-conductive arm 19b, MEMS anchor point 20b is bonded on TSV22b, Y-capacitive sensing signal is just derived annular seal space by TSV22b like this, described Y-conductive arm 19b is formed by the etching of MEMS layer, very soft, can be by the stress transfer of TSV22b to Y-cantilever 14.
Similar to Y-axis structure 10, X-axis structure 30 is also fixed on MEMS center anchor point 55, one end of X+ cantilever 33 and X-cantilever 34Kao center TSV50 is connected with the second linking arm 53 by spacing block 17c, the second linking arm 53 connects MEMS center anchor point 55, like this, X+ cantilever 33 and X-cantilever 34 are just fixed on MEMS center anchor point 55, and described spacing block 17c only provides mechanical connection, do not provide electrical connection, so X+ cantilever 33 and X-cantilever 34 are not electrically connected with MEMS center anchor point 55.Due to X+ cantilever 33 and X-cantilever 34 sizes enough large, so can there is not mechanical shift with respect to MEMS center anchor point 55 in the time having acceleration, also can not there is not mechanical shift with respect to MEMS center anchor point 55 with the fixed electorde 34a being connected with X-cantilever 34 in the fixed electorde 33a being connected with Y+ cantilever 33; X+ cantilever 33 and X-cantilever 34 are isolated by isolating trenches 35, not electrical connection between them; The other end of X+ cantilever 33 and X-cantilever 34 is connected an X linking arm 38 by spacing block 17d, and spacing block 17d only provides mechanical connection, and electrical connection is not provided, so are electrical isolations between an X linking arm 38 and X cantilever 33 and 34.X movable mass 32 is connected with an X linking arm 38 with X-axis spring 31b by X-axis spring 31a, be connected with the 2nd X linking arm 36 with X-axis spring 31d by X-axis spring 31c, the 2nd X linking arm 36 is connected with MEMS center anchor point 55, because X-axis spring 31a, 31b, 31c, 31d and X movable mass 32, the 2nd X linking arm 36 and MEMS center anchor point 55 are manufactured in same MEMS layer, so between X movable mass 32 and MEMS center anchor point 55, be electrically connected, but with X+ cantilever 33, X-cantilever 34 without being electrically connected.X-axis spring 31a, 31b, 31c, 31d, for X movable mass 32 provides along the ability of X-direction activity, suppress the activity of movable mass 32 along Y-direction and Z direction simultaneously.X+ movable electrode 33b is produced on X movable mass 32, and X+ fixed electorde 33a is produced on X+ cantilever 33, and parallel with X+ cantilever 33, vertical with Y+ fixed electorde 13a; X+ movable electrode 33b and an X+ inductance capacitance unit of X+ fixed electorde 33a composition, the parallel side that X+ movable electrode 33b and X+ fixed electorde 33a form has formed the X+ parallel electrode plate of inductance capacitance, and the spacing of parallel electrode plate is D
3.X-movable electrode 34b is produced on X movable mass 32, and X-fixed electorde 34a is manufactured on X-cantilever 34, and parallel with X-cantilever 14; X-movable electrode 34b and an X-inductance capacitance unit of X-fixed electorde 34a composition, the parallel side that X-movable electrode 34b and X-fixed electorde 34a form has formed the X-parallel electrode plate of inductance capacitance, and the spacing of parallel electrode plate is D
4.In the time having X-direction acceleration to be applied in X-axis structure 30, X+ movable electrode 33b moves with respect to MEMS center anchor point 55 along X-direction with X movable mass 32 with X-movable electrode 34b, and X+ fixed electorde 33a, X-fixed electorde 34a can not move with respect to MEMS center anchor point 55, parallel-plate electrode space D
3, D
4will respective change; Taking positive X-axis acceleration as example, due to inertia effect, X+ movable electrode 33b, X-movable electrode 34b move to negative directions X with respect to MEMS center anchor point with X movable mass 32, the X+ electrode separation D between X+ movable electrode 33b and X+ fixed electorde 33a
3be reduced into (D
3-δ), it is large that X+ electric capacity becomes; Meanwhile, the X-electrode separation D between X-movable electrode 34b and X-fixed electorde 34a
4be increased to (D
4+ δ), X-electric capacity diminishes; Suppose D
3=D
4=D, has m X+ capacitive sensing unit and m X-capacitive sensing unit in an X-axis structure 30, the area of each parallel-plate electrode is S
x, the capacitive sensing signal of X-axis structure 30 is:
。
After X+ capacitive sensing signal is responded to by X+ fixed electorde 33a, be transferred on MEMS anchor point 20c by X+ cantilever 33 and X+ conductive arm 39a, MEMS anchor point 20c is bonded on TSV22c, X+ signal is just derived annular seal space by TSV22c like this, described X+ conductive arm 39a is formed by the etching of MEMS layer, very soft, can be by the stress transfer of TSV22c to X+ cantilever 33, thus ensure the signal quality of X-axis structure 30 in use procedure.Equally, after X-capacitive sensing signal is responded to by X-fixed electorde 34a, be transferred on MEMS anchor point 20d by X-cantilever 34 and X-conductive arm 39b, MEMS anchor point 20d is bonded on TSV22d, X-signal is just derived annular seal space by TSV22d like this, described X-conductive arm 39b is formed by the etching of MEMS layer, very soft, can be by the stress transfer of TSV22d to X-cantilever 34.
Z axis structure 40 is seesaw structures, Z movable mass 42 is fixed on MEMS center anchor point 55 by Z axis spring 41a and 41b, Z movable mass 42, Z axis spring 41a, Z axis spring 41b and MEMS center anchor point 55 are produced in same MEMS layer, between them, be to be mutually electrically connected, so the signal of Z movable mass 42 can be drawn by center TSV50, in fact, the signal of X movable mass 12, Y movable mass 32 and Z movable mass 42 connects together by MEMS center anchor point 55.Z movable mass 42 is along X-direction symmetry, asymmetric along Y direction, as shown in Figure 4, positive Y direction is the light end 42e of Z movable mass 42, negative Y direction is the heavily end 42f of Z movable mass 42, the part of the X-direction both sides of Z movable mass 42 is as Z movable electrode, and Z-movable electrode 42a, 42c are positioned at positive Y direction, near light end 42e; Z+ movable electrode 42b, 42d are positioned at negative Y direction, near heavily holding 42f.Z fixed electorde 43 is positioned at the below of Z movable mass 42, namely negative Z-direction, Z-fixed electorde 43a and a Z inductance capacitance unit of Z-movable electrode 42a composition, equally, Z-fixed electorde 43c and a Z inductance capacitance unit of Z-movable electrode 42c composition, Z+ fixed electorde 43b and a Z inductance capacitance unit of Z-movable electrode 42b composition, Z+ fixed electorde 43d and Z-movable electrode 42d form a Z inductance capacitance unit, have the Z inductance capacitance unit of four full symmetrics.
In fact Z fixed electorde 43 itself is exactly a TSV, as shown in Figure 5, isolation channel 51 in Z fixed electorde 43 is insulating material, and Z fixed electorde 43(is comprised to Z+ fixed electorde 43b, 43d and Z-fixed electorde 43a, 43c) isolate with other part electricity of TSV layer.As seen from Figure 6, TSV substrate 57 is divided into two parts by isolation channel 51, the part wherein being fenced up by isolation channel 51 is Z fixed electorde 43, Z movable electrode and Z fixed electorde 43 form Z inductance capacitance unit, its parallel-plate electrode spacing is H in the time there is no acceleration, the other end of Z fixed electorde 43 is coated with insulation course 58, and metal level 54 is connected with Z fixed electorde 43 by contact hole 59, and signal is drawn.
In the time having Z-direction acceleration to be applied in Z axis structure 40, Z+ movable electrode 42b, 42d rotate with respect to MEMS center anchor point 55 as axle center taking Z axis spring 41a, 41b with Z movable mass 42 with Z-movable electrode 42a, 42c, and Z+ fixed electorde 43b, 43d and Z-fixed electorde 43a, 43c can not rotate with respect to MEMS center anchor point 55, will there is respective change in the parallel-plate electrode spacing H of inductance capacitance unit; Taking positive Z axis acceleration as example, due to inertia effect, Z+ movable electrode 42b, 42d move to negative Z direction with respect to MEMS center anchor point with Z movable mass 42, and the electrode separation H between Z+ movable electrode 42b and Z+ fixed electorde 43b diminishes as (H-δ), and it is large that Z+ electric capacity becomes; Meanwhile, the electrode separation H between Z+ movable electrode 42d and Z+ fixed electorde 43d also diminishes as (H-δ); Electrode separation H between Z-movable electrode 42a and Z-fixed electorde 43a becomes greatly (H+δ), and Z-electric capacity diminishes; Electrode separation H between Z-movable electrode 42c and Z-fixed electorde 43c becomes greatly (H+δ); Because four Z inductance capacitance unit all equate, the area of establishing each Z fixed electorde is S
z, the capacitive sensing signal of Z axis structure 40 is:
。
Figure 7 shows that the schematic diagram of center TSV50, TSV substrate 57 is divided into two parts by isolation channel 51, and the part being trapped among in isolation channel 51 becomes TSV conductive pole 57a; MEMS center anchor point 55 is bonded on TSV conductive pole 57a, the material of MEMS layer is heavily doped monocrystalline silicon, thickness is about tens microns, it is good electric conductor, TSV substrate 57 is also heavily doped monocrystalline silicon, thickness arrives hundreds of micron at tens microns conventionally, so the electric signal of MEMS center anchor point 55 can be drawn by TSV conductive pole 57a.As seen from Figure 8, isolation channel 51 runs through TSV substrate 57, is separated out TSV conductive pole 57a; The TSV bonding piece 56 etching on TSV substrate 57 for MEMS center anchor point 55 bondings, meanwhile, the height of TSV bonding piece 56 is also the electrode separation H of Z axis inductance capacitance.The another side of TSV substrate 57 is coated with insulation course 58, and metal level 54 is connected with conductive pole 57a by contact hole 59, and signal is drawn.
Claims (6)
- The 3 axis MEMS accelerometer of 1.TSV wafer level packaging, by being sealed in same annular seal space, and separate X-axis structure, Y-axis structure and Z axis structure composition, it is characterized in that: X-axis structure, Y-axis structure and Z axis structure are all fixed on the TSV of center, the X movable mass of X-axis structure, the electric signal of the Y movable mass of Y-axis structure and the Z movable mass of Z axis structure links together by MEMS center anchor point, and draw in annular seal space by center TSV, the fixed electorde of X-axis structure and Y-axis structure by spacing block respectively with X movable mass, the isolation of Y movable mass electricity, X-axis structure and Y-axis structure utilize the side of movable electrode and fixed electorde as inductance capacitance, Z axis structure utilizes movable mass and Z axis fixed electorde as inductance capacitance, X-axis structure and Y-axis structure lay respectively at the both sides of MEMS center anchor point, and Z axis structure is positioned at the outside of X-axis structure and Y-axis structure.
- 2. the 3 axis MEMS accelerometer of TSV wafer level packaging according to claim 1, is characterized in that:Described X movable mass is fixed on X cantilever by X-axis spring, and and between X cantilever, there is spacing block electricity to isolate, X cantilever is fixed on the TSV of center by MEMS center anchor point, between X cantilever and MEMS center anchor point, there is spacing block to carry out electricity isolation, X movable mass can move along directions X, on X movable mass, be manufactured with X movable electrode, on X cantilever, be manufactured with X fixed electorde, X movable electrode and X fixed electorde composition X-axis inductance capacitance, its signal is drawn from annular seal space by corresponding X-axis TSV, between X-axis TSV and corresponding X cantilever, is connected by X conductive arm;Described Y movable mass is fixed on Y cantilever by Y-axis spring, and and between Y cantilever, there is spacing block to carry out electricity isolation, Y cantilever is fixed on the TSV of center by MEMS center anchor point, between Y cantilever and MEMS center anchor point, there is spacing block to carry out electricity isolation, Y movable mass can move along Y-direction, on Y movable mass, be manufactured with Y movable electrode, on Y cantilever, be manufactured with Y fixed electorde, Y movable electrode and Y fixed electorde composition Y-axis inductance capacitance, its signal is drawn from annular seal space by corresponding Y-axis TSV, between Y-axis TSV and corresponding Y cantilever, is connected by Y conductive arm;Described Z axis structure is a seesaw structure, Z movable mass is fixed on the anchor point of MEMS center by Z axis spring, it is asymmetric that Z movable mass is distributed in the figure of two sides of Z axis spring, Z movable mass can rotate along Z axis spring, Z movable mass and Z fixed electorde composition Z axis inductance capacitance, Z fixed electorde itself is exactly the TSV that area is larger, and its signal can directly be drawn.
- 3. the 3 axis MEMS accelerometer of TSV wafer level packaging according to claim 2, it is characterized in that: described X cantilever comprises X+ cantilever and X-cantilever, between X+ cantilever and X-cantilever, there is the isolation of isolating trenches electricity, on X+ cantilever, be fixed with X+ fixed electorde, on X-cantilever, be fixed with X-fixed electorde.
- 4. the 3 axis MEMS accelerometer of TSV wafer level packaging according to claim 2, it is characterized in that: described Y cantilever comprises Y+ cantilever and Y-cantilever, between Y+ cantilever and Y-cantilever, there is the isolation of isolating trenches electricity, on Y+ cantilever, be fixed with Y+ fixed electorde, on Y-cantilever, be fixed with Y-fixed electorde.
- 5. according to the 3 axis MEMS accelerometer of the TSV wafer level packaging described in claim 2 or 3, it is characterized in that: described X-axis TSV comprises X+TSV and X-TSV, X cantilever comprises X+ cantilever and X-cantilever, X+TSV is fixed on X+MEMS anchor point, X-TSV is fixed on X-MEMS anchor point, between X+TSV and X+ cantilever, be connected by X+ conductive arm, between X-TSV and X-cantilever, be connected by X-conductive arm.
- 6. according to the 3 axis MEMS accelerometer of the TSV wafer level packaging described in claim 2 or 4, it is characterized in that: described Y-axis TSV comprises Y+TSV and Y-TSV, Y cantilever comprises Y+ cantilever and Y-cantilever, Y+TSV is fixed on Y+MEMS anchor point, Y-TSV is fixed on Y-MEMS anchor point, between Y+TSV and Y+ cantilever, be connected by Y+ conductive arm, between Y-TSV and Y-cantilever, be connected by Y-conductive arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475924.7A CN104198763B (en) | 2014-09-17 | 2014-09-17 | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer |
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| CN111998840A (en) * | 2020-08-28 | 2020-11-27 | 中电科技集团重庆声光电有限公司 | MEMS multi-axis vibration sensor structure |
| CN112739642A (en) * | 2018-09-21 | 2021-04-30 | 美国亚德诺半导体公司 | 3-axis accelerometer |
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