CN102435772A - Micro-mechanical acceleration transducer with directly linked silicon wafers based on silicon through-hole technique - Google Patents
Micro-mechanical acceleration transducer with directly linked silicon wafers based on silicon through-hole technique Download PDFInfo
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- CN102435772A CN102435772A CN2011103115268A CN201110311526A CN102435772A CN 102435772 A CN102435772 A CN 102435772A CN 2011103115268 A CN2011103115268 A CN 2011103115268A CN 201110311526 A CN201110311526 A CN 201110311526A CN 102435772 A CN102435772 A CN 102435772A
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Abstract
The invention relates to a micro-mechanical acceleration transducer with directly linked silicon wafers based on a silicon through-hole technique, which comprises three silicon wafer layers in a silicon-silicon direct linking form, wherein the three silicon wafer layers are a fixed electrode wafer layer, a mass block wafer layer and a sealed cover wafer layer in turn; the fixed electrode wafer layer is a through-hole silicon wafer layer with a plurality of vertical first fixed electrodes; a vertical first insulating layer is arranged between the first fixed electrodes; the mass block wafer layer is hung under the through-hole silicon wafer layer in the silicon-silicon direct linking form through a single anchor and comprises two moveable mass blocks; the two moveable mass blocks are symmetrically hung on the two sides of the single anchor, are same in size but are different in mass; mass block electrodes same in size are formed by the moveable mass blocks; and the mass block electrodes and the first fixed electrodes are two electrodes of variable capacitors. In the micro-mechanical acceleration transducer, the through-hole silicon is used as an electrode material of a variable capacitor transducer structure and the silicon-silicon direct linking form is adopted, thereby reducing the thermal stress to be smallest, promoting the property of the transducer, simplifying the processing technique and lowering the cost.
Description
Technical field
The present invention relates to a kind of capacitance type micro mechanical acceleration transducer, specifically, relate to a kind of micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole.
Background technology
The capacitance silicon micromechanical acceleration transducer is because to have a temperature coefficient low, good reproducibility, stable performance, good characteristic such as shock resistance and by extensive concern, be development at present at most, use one of the widest inertia device.
The method for making of capacitance silicon micromechanical acceleration transducer is divided into two big types again, and the first kind is the surface micromachined method, and second type is the bulk silicon micro mechanic processing method.Shortcomings such as the former and ic process compatibility have the expensive low advantage of integrated level, but also have poor stability, and noise is big.And the micro-acceleration gauge of body silicon formula processing adopts monocrystalline silicon as sensing unit, and mass is bigger, thereby highly sensitive, and noise is little, stable performance.Thereby higher performance accelerometer adopts bulk silicon technological to make usually.
Bulk silicon technological mainly can be divided into silicon-Glass Bonding Technology and silicon-silicon bond again and close two kinds of technologies.After the performance requirement of sensor is further improved, reach tactics level and navigation level such as accuracy requirement after, require also strict more to the coupling of the thermal expansion factor of material.From this point, silicon-silicon bond closes and is more even better than silicon-glass bonding.Up to the present, what most of silicon-silicon bonds closed employing is the congruent melting bonding, and the congruent melting material can be devitrified glass slurry or meltability alloy material, also needs the layer of silicon dioxide insulating material as separation layer sometimes.Yet these bonding congruent melting materials and isolated material more or less can bring some thermal stress issues that do not match, thereby have influence on device performance.Therefore, want thoroughly to eliminate thermal stress issues, preferably adopt three-dimensional silica-Si direct bonding, do not carry any non-silicon materials between the wafer secretly.
The SOI technology that generally adopts in the market can not reach this requirement.Because the silicon dioxide insulating layer between the wafer is that electricity between mass and the electrode is isolated one of requisite material.But the direction that this layer insulating can be more or less in perpendicular to wafer causes the thermal stress that do not match.The through hole silicon technology that development in recent years is got up be with silicon dioxide as vertically insulated layer, vertical silicon dioxide layer is less to the thermal stress influence of vertical direction.
Summary of the invention
The purpose of this invention is to provide that a kind of thermal stress is less, the micro-machine acceleration transducer and the processing technology thereof based on the Silicon Wafer Direct Bonding of silicon through hole technology of better performances.
For achieving the above object, the technical scheme that the present invention adopts is:
A kind of micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole, it comprises three layers of silicon wafer layer of silicon-Si direct bonding, described three layers of silicon wafer layer are followed successively by fixed electorde wafer layer, mass wafer layer, cover wafer layer;
Described fixed electorde wafer layer is the through hole silicon wafer layer, and it has a plurality of first fixed electordes perpendicular to described through hole silicon wafer layer, has first insulation course perpendicular to described through hole silicon wafer layer between the first adjacent fixed electorde;
Described mass wafer layer hangs on the below of described through hole silicon wafer layer through single anchor point silicon-Si direct bonding mode; It comprises two movable mass that are suspended from described single anchor point both sides of symmetry, two described movable mass big or small identical, quality is different, its formation mass electrode, described mass electrode big or small identical;
Described mass electrode and described first fixed electorde are two utmost points of variable capacitance.
Preferably, the material of described three layers of silicon wafer layer is highly doped monocrystalline silicon, and described first fixed electorde is formed by described highly doped monocrystalline silicon.
Preferably, the width of described first fixed electorde is 300-600 μ m, and length is 500-1000 μ m.
Preferably, described first insulation course is formed by silicon dioxide, and the thickness of described first insulation course is that the distance between adjacent described first fixed electorde is 10-20 μ m.
Preferably; Described mass wafer layer with described through hole silicon wafer layer mutually the upper surface of bonding have first shallow hole; Described mass electrode is arranged in described first shallow hole, and the degree of depth of described first shallow hole is the distance of two utmost points of described variable capacitance; Described cover wafer layer have second shallow hole in the surface of bonding mutually with described mass wafer layer.
Preferably, a described movable mass is solid, and another described movable mass is hollow; Described mass wafer layer and fixed electorde wafer layer and the direct silicon-silicon bond of cover wafer layer close and are sealed in middle.
Second kind of structure is three-decker; Described cover wafer layer is and the identical through hole silicon wafer layer of described fixed electorde wafer layer structure; It has a plurality of second fixed electordes perpendicular to described cover wafer layer, has second insulation course perpendicular to described cover wafer layer between the second adjacent fixed electorde.
Preferably; Described mass wafer layer and described fixed electorde wafer layer and the direct silicon-silicon bond of cover wafer layer close and are sealed in middle; Described mass wafer layer and described first fixed electorde and described second fixed electorde be symmetry up and down, and spacing equates.
Because technique scheme utilization; The present invention compared with prior art has advantage: 1, because the present invention adopts the electrode material of through hole silicon as the variable capacitance transducer structure; Promptly several electrodes are separated, and need not carry any non-silicon materials secretly between three layers of silicon wafer layer, not only thermal stress is reduced to minimum with vertical electric insulation layer; Also reduce size of devices effectively, also promoted impermeability and reliability simultaneously effectively; Can save the required air-breathing rete that adds of common acceleration transducer, thereby simplify processing technology, reduce cost; 2, because the present invention adopts single anchor point silicon-Si direct bonding mode the mass wafer layer to be hung on the below of through hole silicon wafer layer; Direct Bonding in conjunction with silicon wafer layer; The stray capacitance of sensor is much smaller than the differential capacitance type sensor that adopts SOI technology to make; Make chip responsive hardly, thereby improved the performance of sensor greatly for the extra-stress that produces by the encapsulation paster; 3, because the present invention adopts the cover wafer layer as backing material, and it is connected with the package substrate material through paster, be separated by sensor electrode and mass through cover wafer layer and encapsulating material and leave, can reduce stress, raising sensor performance; 4, because mass wafer layer of the present invention has the movable mass that size is identical, quality is different; Its mass electrode area is identical; Thereby damping is also identical, makes the vibration damping of two movable mass reach balance, has effectively reduced the vibration rectification error.
Description of drawings
Accompanying drawing 1 is the sectional view of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 2 is the schematic perspective view of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 3 is the schematic perspective view of through hole silicon wafer layer of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 4 is the schematic perspective view of mass wafer layer of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 5 is the schematic perspective view of cover wafer layer of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 6 is the synoptic diagram of three layers of silicon wafer phase Direct Bonding of the acceleration transducer of embodiments of the invention one.
Accompanying drawing 7 is the sectional view of the acceleration transducer of embodiments of the invention two.
In the above accompanying drawing: 1, fixed electorde wafer layer; 2, mass wafer layer; 3, cover wafer layer; 4, first fixed electorde; 5, first insulation course; 6, first metal electrode; 7, single anchor point; 8, hollow mass electrode; 9, solid mass electrode; 10, second fixed electorde; 11, second insulation course; 12, second metal electrode.
Embodiment
Below in conjunction with embodiment shown in the drawings the present invention is further described.
Embodiment one: shown in accompanying drawing 1 to accompanying drawing 5.
A kind of micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole, it comprises three layers of silicon wafer layer of silicon-Si direct bonding, three layers of silicon wafer layer are followed successively by fixed electorde wafer layer 1, mass wafer layer 2, cover wafer layer 3.The material of three layers of silicon wafer layer is highly doped monocrystalline silicon.Mass wafer layer 2 closes with fixed electorde wafer layer 1 and cover wafer layer 3 direct silicon-silicon bond and is sealed in middle.
Fixed electorde wafer layer 1 is the through hole silicon wafer layer, and it has a plurality of first fixed electordes 4 perpendicular to the through hole silicon wafer layer, has first insulation course 5 perpendicular to the through hole silicon wafer layer between the first adjacent fixed electorde 4.First fixed electorde 4 is formed by highly doped monocrystalline silicon, and first insulation course 5 is formed by silicon dioxide.The area of first fixed electorde 4 is bigger, and its width is 300-600 μ m, and length is 500-1000 μ m, and the thickness of first insulation course 5 is that the distance between adjacent first fixed electorde 4 is 10-20 μ m, and representative value is 20 μ m.The through hole silicon wafer layer not with mass wafer layer 2 mutually the outside surface of bonding have and first fixed electorde, the 4 corresponding first Ohmic contact windows, form first metal electrode 6 by the metallic aluminium film in the first Ohmic contact window.
Because the mass electrode area of fulcrum both sides is identical, thereby damping is also identical, makes the side-to-side vibrations damping reach balance, this has just reduced vibration rectification error (Vibration Rectification Error VRE) effectively.Because the isolation spacing between first fixed electorde 4 is the 10-20 micron; Thickness (1-2 μ m) much larger than common SOI insulation course; Though acceleration transducer also is to adopt single fulcrum to rock formula differential capacitance type structure, sensor parasitic capacitance effect of the present invention will be much smaller than the differential capacitance type sensor that adopts SOI technology to make.
Shown in accompanying drawing 6, the processing technology of the micro-machine acceleration transducer of above-mentioned Silicon Wafer Direct Bonding based on silicon through hole technology comprises following flow process:
(1) is processed to form first fixed electorde, 4 wafers, mass wafer, cover wafer sheet respectively;
Be processed to form first fixed electorde, 4 wafers and comprise following flow process:
1. adopt the figure of P+ monocrystalline silicon wafer crystal sheet photoetching formation first fixed electorde 4, and adopt DRIE degree of depth plasma etching method etching to form a plurality of deep trouths perpendicular to wafer;
2. adopt cvd oxide material method to fill deep trouth and form first insulation course 5;
3. adopt and mill or the thickness of chemical polishing attenuate P+ monocrystalline silicon wafer crystal sheet forms the through hole silicon wafer; Because deep trouth does not penetrate P+ monocrystalline silicon wafer crystal sheet fully, therefore need to adopt the thickness of said method attenuate P+ monocrystalline silicon wafer crystal sheet in its one side that does not penetrate, make deep trouth form the through hole that penetrates P+ monocrystalline silicon wafer crystal sheet;
Be processed to form the mass wafer and comprise following flow process:
1. adopt P+ monocrystalline silicon wafer crystal sheet or SOI wafer to adopt photo etched mask to add the figure that plasma etching forms vertical overload-resistant restraining barrier;
2. second wafer is carried out photoetching and form first shallow hole;
3. second wafer is carried out the figure that photoetching forms movable mass;
Be processed to form the cover wafer sheet and comprise following flow process:
Adopt the photoetching of P type silicon wafer to form second shallow hole.
(2) first fixed electorde, 4 wafers and mass wafer are carried out silicon-Si direct bonding.
(3) thickness that adopts polishing or deep etching method attenuate mass wafer is to desired value.
(4) adopt DRIE degree of depth plasma etching method etching mass wafer to form two movable mass, and adopt vapour phase hydrofluorite to remove the silicon dioxide layer of mass wafer surface.
(5) mass wafer and cover wafer sheet are carried out silicon-Si direct bonding.
(6) not adding silicon dioxide etching by photoetching on the outside surface of bonding mutually and form and first fixed electorde, 4 corresponding Ohmic contact windows at the fixed electorde wafer with the mass wafer.
(7) sputter forms metal electrode in ohm stationary window.
Three layers of silicon wafer all adopt silicon-Si direct bonding, do not carry any non-monocrystalline silicon material between the silicon wafer secretly, even do not comprise silicon dioxide insulating layer, thereby thermal stress is reduced to minimum.Silicon-Si direct bonding has the good characteristics of impermeability in addition, can save the air-breathing rete that common inertia sensing need add, thereby simplify technology, has reduced cost.
This method not only can be used for making acceleration transducer, can also be used to making other high-performance inertial sensor such as micro-mechanical gyroscope etc.
Embodiment two: shown in accompanying drawing 7.
A kind of micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole; Be with the different of embodiment one: cover wafer layer 3 is the through hole silicon wafer layer identical with fixed electorde wafer layer 1 structure; It has a plurality of second fixed electordes 10 perpendicular to cover wafer layer 3, has second insulation course 11 perpendicular to cover wafer layer 3 between the second adjacent fixed electorde 10.Cover wafer layer 3 not with mass wafer layer 2 mutually the outside surface of bonding be formed with and second fixed electorde, the 10 corresponding second Ohmic contact windows, form second metal electrode 12 by the metallic aluminium film in the second Ohmic contact window.Mass wafer layer 2 closes with fixed electorde wafer layer 1 and cover wafer layer 3 direct silicon-silicon bond and is sealed in middle.The mass wafer layer 2 and first fixed electorde 4 and second fixed electorde be symmetry about in the of 10, and spacing equates.
The advantage of this structure is: under the constant condition of die size, make the area of sensitive electrode increase by one times, thereby signal sensitivity is improved; In addition, symmetrical up and down by the electrostatic force that driving voltage produces, can not make the distortion of chip quality piece, though this distortion and small, for high-performance sensors, perhaps this distortion can not be ignored.Yet the technological process of making this sensor is comparatively complicated, and cost of manufacture increases.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to let the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (8)
1. micro-machine acceleration transducer based on the Silicon Wafer Direct Bonding of silicon through hole technology; It is characterized in that: it comprises three layers of silicon wafer layer of silicon-Si direct bonding, and described three layers of silicon wafer layer are followed successively by fixed electorde wafer layer, mass wafer layer, cover wafer layer;
Described fixed electorde wafer layer is the through hole silicon wafer layer, and it has a plurality of first fixed electordes perpendicular to described through hole silicon wafer layer, has first insulation course perpendicular to described through hole silicon wafer layer between the first adjacent fixed electorde;
Described mass wafer layer hangs on the below of described through hole silicon wafer layer through single anchor point silicon-Si direct bonding mode; It comprises two movable mass that are suspended from described single anchor point both sides of symmetry, two described movable mass big or small identical, quality is different, its formation mass electrode, described mass electrode big or small identical;
Described mass electrode and described first fixed electorde are two utmost points of variable capacitance.
2. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1; It is characterized in that: the material of described three layers of silicon wafer layer is highly doped monocrystalline silicon, and described first fixed electorde is formed by described highly doped monocrystalline silicon.
3. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1 and 2, it is characterized in that: the width of described first fixed electorde is 300-600 μ m, length is 500-1000 μ m.
4. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1; It is characterized in that: described first insulation course is formed by silicon dioxide, and the thickness of described first insulation course is that the distance between adjacent described first fixed electorde is 10-20 μ m.
5. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1; It is characterized in that: described mass wafer layer with described through hole silicon wafer layer mutually the upper surface of bonding have first shallow hole; Described mass electrode is arranged in described first shallow hole, and the degree of depth of described first shallow hole is the distance of two utmost points of described variable capacitance; Described cover wafer layer have second shallow hole in the surface of bonding mutually with described mass wafer layer.
6. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1, it is characterized in that: a described movable mass is solid, and another described movable mass is hollow; Described mass wafer layer and described fixed electorde wafer layer and the direct silicon-silicon bond of described cover wafer layer close and are sealed in middle.
7. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 1; It is characterized in that: described cover wafer layer is and the identical through hole silicon wafer layer of described fixed electorde wafer layer structure; It has a plurality of second fixed electordes perpendicular to described cover wafer layer, has second insulation course perpendicular to described cover wafer layer between adjacent described second fixed electorde.
8. the micro-machine acceleration transducer based on the technological Silicon Wafer Direct Bonding of silicon through hole according to claim 7; It is characterized in that: described mass wafer layer and described fixed electorde wafer layer and the direct silicon-silicon bond of cover wafer layer close and are sealed in middle; Described mass wafer layer and described first fixed electorde and described second fixed electorde be symmetry up and down, and spacing equates.
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| CN104198763A (en) * | 2014-09-17 | 2014-12-10 | 安徽北方芯动联科微系统技术有限公司 | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer |
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| CN107421662A (en) * | 2017-06-28 | 2017-12-01 | 重庆芯原微科技有限公司 | A kind of new sensitive structure of MEMS capacitive pressure sensor |
| CN110568220A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
| CN111289773A (en) * | 2018-12-06 | 2020-06-16 | 航天科工惯性技术有限公司 | Accelerometer vibration rectification error test device and method |
| CN114578094A (en) * | 2022-02-28 | 2022-06-03 | 湖南天羿领航科技有限公司 | High-overload torsional pendulum type silicon micro-accelerometer and preparation method thereof |
| CN116827301A (en) * | 2023-08-30 | 2023-09-29 | 麦斯塔微电子(深圳)有限公司 | MEMS resonator and preparation method thereof |
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| CN103528576B (en) * | 2012-07-05 | 2017-01-25 | 北方电子研究院安徽有限公司 | Hemispherical resonance micro mechanical gyroscope and processing technology thereof |
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| CN104198763A (en) * | 2014-09-17 | 2014-12-10 | 安徽北方芯动联科微系统技术有限公司 | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer |
| CN104198763B (en) * | 2014-09-17 | 2017-01-11 | 安徽北方芯动联科微系统技术有限公司 | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer |
| CN106199070A (en) * | 2016-06-24 | 2016-12-07 | 东南大学 | Single anchor points support formula silicon micro-resonance type accelerometer |
| CN107421662A (en) * | 2017-06-28 | 2017-12-01 | 重庆芯原微科技有限公司 | A kind of new sensitive structure of MEMS capacitive pressure sensor |
| CN111289773B (en) * | 2018-12-06 | 2022-08-09 | 航天科工惯性技术有限公司 | Accelerometer vibration rectification error test device and method |
| CN111289773A (en) * | 2018-12-06 | 2020-06-16 | 航天科工惯性技术有限公司 | Accelerometer vibration rectification error test device and method |
| CN110568220A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
| CN110568220B (en) * | 2019-08-27 | 2021-04-30 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
| CN114578094A (en) * | 2022-02-28 | 2022-06-03 | 湖南天羿领航科技有限公司 | High-overload torsional pendulum type silicon micro-accelerometer and preparation method thereof |
| CN114578094B (en) * | 2022-02-28 | 2024-04-02 | 湖南天羿领航科技有限公司 | High overload torsion type silicon micro accelerometer and preparation method thereof |
| CN116827301A (en) * | 2023-08-30 | 2023-09-29 | 麦斯塔微电子(深圳)有限公司 | MEMS resonator and preparation method thereof |
| CN116827301B (en) * | 2023-08-30 | 2023-11-03 | 麦斯塔微电子(深圳)有限公司 | MEMS resonator and preparation method thereof |
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Application publication date: 20120502 Assignee: Nanjing GaoHua Technology Co., Ltd. Assignor: Suzhou Wenzhixin Microsystem Technology Co.,Ltd. Contract record no.: 2013320000080 Denomination of invention: Micro-mechanical acceleration transducer with directly linked silicon wafers based on silicon through-hole technique License type: Exclusive License Record date: 20130311 |
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