JP2005249454A - Capacity type acceleration sensor - Google Patents

Capacity type acceleration sensor Download PDF

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Publication number
JP2005249454A
JP2005249454A JP2004057303A JP2004057303A JP2005249454A JP 2005249454 A JP2005249454 A JP 2005249454A JP 2004057303 A JP2004057303 A JP 2004057303A JP 2004057303 A JP2004057303 A JP 2004057303A JP 2005249454 A JP2005249454 A JP 2005249454A
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substrate
mass body
inertial mass
acceleration sensor
movable electrode
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JP2005249454A5 (en
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Yoshiaki Hirata
Masahiro Tsugai
善明 平田
政広 番
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Mitsubishi Electric Corp
三菱電機株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a small-sized capacitive acceleration sensor with high detection sensitivity.
A capacitive acceleration sensor according to the present invention has a substrate having at least one pair of fixed electrodes and a conductive beam structure bonded with a detection gap between the substrate. A part of the inertial mass body constituting the conductive beam structure is opposed to the fixed electrode to form at least one pair of movable electrodes, and the movable electrode and the fixed electrode constitute a differential capacitance. By providing a weight part made of one or more materials that are the same as or higher in density than the inertial mass at the lower part of the inertial mass, the inertial mass is increased and the displacement of the inertial mass is increased. , Improve detection sensitivity.
[Selection] Figure 2

Description

  The present invention relates to a capacitive acceleration sensor used for vibration control, vehicle control, and motion control.

A conventional capacitive acceleration sensor includes, for example, a substrate made of single crystal silicon and a conductive beam structure (hereinafter referred to as a beam structure) made of a polysilicon thin film with a thickness of several μm formed on the substrate. It is configured. The beam structure has an inertial mass body and a beam formed by etching a polysilicon thin film deposited on the substrate, and the inertial mass body is suspended on the substrate via a gap by the beam. Has been. The inertia mass body has a pair of movable electrodes, and faces a pair of fixed electrodes provided on the substrate via a gap to form two sets of capacitors. When the inertial force due to acceleration acts on the inertial mass body, the detection capacitance (hereinafter referred to as detection capacitance) of the two sets of capacitors increases one capacitance (hereinafter referred to as capacitance) due to the displacement of the movable electrode, and the other Capacitance decreases and differential capacitance changes. That is, when acceleration is applied, the movable electrode is displaced to a position where the spring restoring force of the beam and the inertial force represented by acceleration × mass are balanced. The amount of displacement of the movable electrode at this time is converted by an external detection circuit as a differential capacitance change between two sets of capacitors, and acceleration is detected (see, for example, Patent Document 1).
Japanese Patent Publication No. 6-44008

  In the above acceleration sensor, as a method for increasing the detection sensitivity, for example, a method of increasing the amount of displacement due to inertial force is conceivable. In order to increase the amount of displacement, a method of decreasing the rigidity of the beam or increasing the inertial mass can be considered. However, when the rigidity of the beam is lowered, there are problems in sensor characteristics that the sensitivity of other axes deteriorates, and a process problem in that the etching processing accuracy decreases.

  On the other hand, when the inertial mass is increased, there are few problems on the sensor characteristics described above. As a method of increasing the inertial mass, for example, there is a method of increasing the thickness of the inertial mass body or increasing the area of the inertial mass body. However, when the thickness of the polysilicon constituting the inertial mass body is increased, there is a problem in the process that the film stress is difficult to control, the etching processing accuracy is lowered, and the process cost is increased. Therefore, in reality, the thickness of the polysilicon film is limited to about 10 μm, but there is a problem that the film thickness cannot provide a sufficient effect for increasing the displacement. On the other hand, the method of increasing the area of the inertial mass body has few problems in the process described above, but has a problem that the sensor is enlarged.

  Accordingly, an object of the present invention is to solve the above-described problems and provide a capacitive acceleration sensor that is small in size and high in detection sensitivity.

  In order to solve the above problems, the capacitive acceleration sensor of the present invention is supported by a substrate having at least one pair of fixed electrodes and an elastic beam supported by an anchor on the substrate, and is opposed to the fixed electrodes. An inertial mass body including a movable electrode, and a lower portion of the inertial mass body includes a weight portion made of one or more materials that are the same as or higher in density than the inertial mass body. .

  According to the present invention, since the weight part made of one or more kinds of materials that are the same as or higher in density than the inertial mass body is provided below the inertial mass body, the area of the inertial mass body can be increased. The inertial mass can be increased while suppressing. Therefore, the amount of displacement of the inertia mass body can be increased. The displacement in the detection direction of the inertial mass body is converted into a torsional displacement of the movable electrode by the beam and output as a differential capacitance change, but as the displacement amount of the inertial mass body increases, the differential capacitance change also increases. It is possible to increase the detection sensitivity. Here, the weight portion also has the effect of lowering the position of the center of gravity of the inertial mass body and increasing the amount of torsional displacement of the movable electrode. This makes it possible to provide a small and highly sensitive acceleration sensor.

  Further, the capacitive acceleration sensor of the present invention detects an in-plane acceleration by providing a base having a weight portion and supporting each movable electrode on an inertial mass body, and supporting the base portion on an elastic beam. Can do. Here, the in-plane acceleration refers to an acceleration acting on a plane (xy plane) parallel to the substrate.

  In the capacitive acceleration sensor of the present invention, the inertia mass body includes a frame portion surrounding the movable electrode and having the weight portion, and the central portion of the movable electrode is supported by a pair of torsion beams. On the other hand, the out-of-plane acceleration can be detected by connecting the movable electrode and the frame portion with a pair of link beams arranged apart from the torsion beam. Here, the out-of-plane acceleration refers to acceleration acting on a plane (z plane) perpendicular to the substrate.

In addition, a capacitive acceleration sensor that detects acceleration components in three orthogonal axes can be provided by combining the above-described capacitive acceleration sensors for detecting in-plane acceleration and detecting out-of-plane acceleration.
That is, another capacitive acceleration sensor according to the present invention has three types of conductive beam structures bonded to each other by providing a detection gap on a substrate having at least three pairs of fixed electrodes. The conductive beam structures are first, second, and third conductive beam structures that detect acceleration components in the x, y, and z directions, respectively. An inertial mass body displaceable by acceleration, at least a pair of elastic beams connected to the inertial mass body to support the inertial mass body above the detection gap, and at least bonded to the substrate and supporting the elastic beam A pair of anchors, and a part of the inertial mass body is opposed to the fixed electrode to form at least one pair of movable electrodes, and the movable electrode and the fixed electrode constitute a differential capacitance. The same as the inertial mass body at the bottom of the inertial mass body. Or it has the weight part which consists of 1 or more types of materials of higher density than an inertial mass body, and also supports each said movable electrode in the inertial mass body of the 1st and 2nd conductive beam structure And a base portion having the weight portion is provided, and the base portion is supported by the elastic beam, while the inertia mass body of the third conductive beam structure surrounds the movable electrode, and the weight portion is The movable electrode and the frame are spaced apart from the torsion beam while the center of the movable electrode is supported by a pair of torsion beams and suspended above the detection gap. The first and second conductive beam structures are connected to each other by a pair of link beams, and the first and second conductive beam structures are arranged to be orthogonal to each other.

  Moreover, the capacitive acceleration sensor of the present invention can be manufactured, for example, by the following method. That is, the method for manufacturing a capacitive acceleration sensor according to the present invention includes a substrate having a fixed electrode and a pair of opposing main surfaces, and an inertia including a movable electrode that is suspended by a beam on the substrate and faces the fixed electrode. A method of manufacturing a capacitive acceleration sensor comprising: a mass body; and a lower portion of the inertia mass body having a weight portion made of one or more kinds of materials that are the same as or higher in density than the inertia mass body. A first insulating layer is laminated on one main surface of the substrate, an opening is provided in a connection region between the weight portion and the inertia mass body, and the opening and the first insulating layer are predetermined. A first conductive layer is laminated in the region, a connection portion between the weight portion and the inertial mass body is formed in the opening, and a fixed electrode is formed in a predetermined region of the first insulating layer, A sacrificial layer is laminated so as to separate the fixed electrode and the connection portion and cover the fixed electrode Then, a second conductive layer is laminated so as to cover the connection portion and the sacrificial layer to form an inertial mass body having a movable electrode, and through-etching is performed from the other main surface of the substrate to remove the weight portion from the substrate. Then, the sacrificial layer is removed by etching, the fixed electrode and the movable electrode are opposed to each other through a gap, and the inertial mass body is movable.

  Further, another manufacturing method of the present invention includes a substrate having a fixed electrode and a pair of opposing main surfaces, and an inertial mass body that includes a movable electrode that is suspended by a beam on the substrate and faces the fixed electrode. And a lower part of the inertial mass body has a weight part made of one or more kinds of materials that are the same as or higher in density than the inertial mass body. A SOI substrate in which a single crystal silicon layer is formed on one main surface of the single crystal silicon substrate via a silicon oxide layer is etched to form a movable electrode made of single crystal silicon, the weight portion, and the inertial mass body. Forming an inertial body having a fixed electrode by laminating a polysilicon layer so as to cover the opening and the sacrificial layer. The other of the single crystal silicon substrate The weight part is separated from the single crystal silicon substrate by through-etching from the surface, and then the sacrificial layer is removed by etching, the fixed electrode and the movable electrode are made to face each other through a gap, and the inertial mass body is movable. It is characterized by.

  In order to improve the accuracy of the acceleration sensor, it is necessary to increase the initial detection capacitance in order to reduce the influence of the parasitic capacitance other than the detection capacitance. However, as described above, the film thickness of the electrode cannot be increased due to a problem in the process, and there is a problem that the gap between the movable electrode and the fixed electrode cannot be reduced due to a decrease in etching processing accuracy. Therefore, in order to increase the initial detection capacity, it is necessary to increase the facing area between the movable electrode and the fixed electrode. However, increasing the facing area increases the size of the element. On the other hand, according to the present invention, the gap between the fixed electrode and the movable electrode is formed by sacrificial layer etching, so that the gap spacing is made minute and uniform by adjusting the thickness of the sacrificial increase. It becomes possible to adjust. As a result, the initial detection capacity can be increased without increasing the facing area between the movable electrode and the fixed electrode, so that a small and highly accurate acceleration sensor can be provided.

  In addition, when an SOI substrate in which a single crystal silicon layer is formed on a single crystal silicon substrate through a silicon oxide layer is used, the thickness of the silicon oxide layer can be set to a desired size. It becomes possible to finely and uniformly adjust the gap between the electrode and the movable electrode. Furthermore, since the inertial mass body can be made of single crystal silicon, the film stress can be reduced and the reliability can be improved.

Embodiments of the present invention will be described below with reference to the drawings.
Embodiment 1 FIG.
1 is a schematic plan view showing a capacitive acceleration sensor (hereinafter referred to as a sensor) according to Embodiment 1 of the present invention, FIG. 2 is a schematic cross-sectional view taken along line AA in FIG. 1, and FIG. It is a line model sectional view. The sensor has a substrate 1 and a conductive beam structure 50 (hereinafter referred to as a beam structure) joined between the substrate 1 and a detection gap 19. The beam structure 50 includes an inertial mass body 10A, a pair of elastic beams 12 connected to the inertial mass body 10A and supporting the inertial mass body 10A above the detection gap 19, and supporting the elastic beams on the substrate 1. A pair of anchors 13 joined together. The inertia mass body 10A has a base portion 10a that supports a pair of movable electrodes 11 extending on both sides. A weight 18 made of a material that is the same as or higher in density than the inertial mass 10A is formed on the lower part of the base 10a via a mass 6 made of the same material as the base. Here, a concave portion 1a that accommodates the weight portion 18 so as to be displaceable is formed on the substrate almost directly below the base portion 10a. The position is lower than the position of the anchor portion 13 that supports the beam.

  The movable electrode 11 faces the fixed electrodes 4a and 4b formed on the substrate through the detection gap 19, and forms two sets of capacitors. The anchor 13 that is electrically connected to the fixed electrodes 4 a and 4 b and the movable electrode 11 is electrically connected to the electrode pad 15 by the wiring 5. The wiring 5 and the fixed electrodes 4 a and 4 b are insulated from the substrate 1 by the insulating film 2. The wiring 5 disposed under the bonding frame 14 is formed flat without unevenness due to the presence of the insulating film 3 and the insulating film 7. The bonding frame 14 is disposed on the wiring 5, the insulating film 3, the insulating film 7, and the insulating film 8, and the upper surface of the substrate 1 is hermetically bonded to the upper surface protective substrate 16. On the other hand, the lower surface of the substrate 1 is hermetically bonded to the lower surface protection substrate 20. Thereby, the beam structure 50 and the fixed electrodes 4a and 4b are hermetically sealed with a predetermined pressure. A lower gap 17 is formed between the weight portion 18 and the lower surface protection substrate 20, and the weight portion 18 is lifted from the lower surface protection substrate 20.

  As shown in FIG. 2, the inertial mass body 10A supported by the elastic beam 12 has its center of gravity 22 below the beam support position, so that when the acceleration is applied in the acceleration detection direction 21, the inertial mass body 10A is twisted. A rotational moment of 23 acts. Here, the dimensions (length, width, thickness) of the elastic beam are adjusted so that the elastic beam displaces the inertial mass body 10 </ b> A only in the acceleration detection direction 21. At this time, the movable electrode 11 integral with the inertial mass body 10A is also subjected to the rotational moment, and the movable electrode is displaced in the out-of-plane direction. Thereby, for example, when the inertial mass body 10A is tilted to the left, the gap between the movable electrode 11 and the fixed electrode 4a is widened, and the detection gap 19 between the movable electrode 11 and the fixed electrode 4b is narrowed. The change in the differential capacitance between the movable electrode and the fixed electrode can be detected by converting the acceleration into the acceleration using the capacitive sensor detection circuit shown in FIG. 1 of Japanese Patent No. 3125675, for example.

  Here, as the material of the beam structure, doped polysilicon (hereinafter referred to as polysilicon), single crystal silicon, metal, or the like can be used, but polysilicon or single crystal that can be used for a semiconductor micromachining process is used. It is preferable to use crystalline silicon.

  The material of the weight portion is not particularly limited as long as it is the same material as the inertia mass body or a material having a higher density than the inertia mass body. For example, when polysilicon is used for the inertia mass body, it is preferable to use single crystal silicon for the weight portion. When single crystal silicon is used for the inertial mass body, it is preferable to use single crystal silicon or a metal material for the weight portion.

  Further, a glass substrate or a single crystal silicon substrate can be used for the upper surface protective substrate and the lower surface protective substrate. These protective substrates can be hermetically bonded to the bonding frame or substrate using anodic bonding, metal eutectic bonding, organic adhesive, or the like.

Next, an example of a method for manufacturing the sensor according to the present embodiment will be described with reference to the schematic cross-sectional view of FIG. Here, the left side of FIG. 4 shows a schematic cross-sectional view along the line AA in FIG. 1, and the right side shows a schematic cross-sectional view along the line BB in FIG. FIG. 4 illustrates an example in which a single crystal silicon substrate is used as the substrate and polysilicon is used as the beam structure.
In step (a), an insulating film 2 such as a silicon nitride film is deposited on the single crystal silicon substrate 1 to open a region for forming a base of the inertial mass body. In step (b), an insulating film 3 such as a silicon oxide film is deposited and patterned. The insulating film 3 is formed below the bonding frame 14 and below the elastic beam 12 so that no step is generated by the polysilicon film deposited in the next process. In the step (c), a polysilicon film is deposited and patterned to form the fixed electrodes 4a and 4b, the wiring 5 and the mass body 6. In step (d), an insulating film 7 such as a silicon oxide film is deposited and patterned. The insulating film 7 is formed in a region below the bonding frame 14 and without the wiring 5. Thereby, the level | step difference by the wiring 5 can be eliminated and the lower part of the joining frame 14 can be planarized. In step (e), an insulating film 8 such as a silicon nitride film is deposited and patterned. The insulating film 8 is used as a protective layer for the insulating film 3 and the insulating film 7 when the wiring 5 is electrically insulated and the sacrificial layer is removed by hydrofluoric acid or the like. In step (f), a sacrificial layer 9 made of phosphosilicate glass or the like is deposited and patterned. The sacrificial layer 9 is formed below the movable electrode 11 and the elastic beam 12. The distance of the gap between the fixed electrode and the movable electrode is determined by the thickness of the sacrificial layer 9. In the step (g), a polysilicon film is deposited and patterned to form the inertia mass body 10A, the elastic beam 12, the anchor 13, and the joining frame 14. Subsequently, the metal pad 15 is formed. The metal pad 15 is an electrode for electrical connection with an external detection circuit by wire bonding or the like. In the step (h), the bonding frame 14 and the upper surface protective substrate 16 are bonded. Next, the single crystal silicon substrate 1 is polished to a desired thickness, for example, about several tens of μm to 100 μm, by mechanical polishing, chemical polishing, or the like. In the step (i), the lower gap 17 is formed on the back surface of the single crystal silicon substrate 1 by dry etching, wet etching, etc., and the single crystal silicon substrate 1 is continuously etched by dry etching or the like so that the weight portion 18 made of single crystal silicon is formed. Is separated from the single crystal silicon substrate 1. Here, the insulating film 3 and the sacrificial layer 9 function as an etching stop layer. The weight portion 18 is held by the insulating film 3 and the sacrificial layer 9 during the through etching. In step (j), the sacrificial layer 9 is selectively removed with hydrofluoric acid or the like to form the detection gap 19 and the gap below the elastic beams 12 and 12. Thereby, a through-hole that accommodates the weight portion 18 in a displaceable manner is formed in the single crystal silicon substrate 1. Next, the lower surface protection substrate 20 is hermetically bonded to the single crystal silicon substrate 1. Here, the through hole becomes the recess 1a. Finally, the glass on the metal pad 15 is removed by dicing or the like, and the wafer process of the acceleration sensor is completed.

  As described above, the acceleration sensor according to the present embodiment adds the weight part made of single crystal silicon to the lower part of the inertial mass body made of polysilicon, thereby suppressing an increase in the area of the inertial mass body. However, the inertial mass can be increased. This makes it possible to provide a small and highly sensitive in-plane acceleration detection sensor. In addition, since the gap between the movable electrode and the fixed electrode is formed by etching the sacrificial layer of the thin film, the gap interval can be uniformly narrowed. Thereby, since the initial detection capacity can be increased, the accuracy can be improved. In addition, since the sensor is hermetically sealed with the upper and lower surface protection substrates, it is possible to provide an acceleration sensor that is highly resistant to the influence of disturbance and highly reliable. In addition, because of the sealed structure, expensive metal packages and ceramic packages are not required, and it can be packaged by an inexpensive plastic package used in general ICs, and a cheaper acceleration sensor can be provided. It becomes. In addition, because the structure around the inertial mass body is surrounded by a large-area single crystal silicon fixed with a fixed gap, the damping effect is high, and impact is applied to the inertial mass body even if excessive acceleration is applied. Therefore, reliability can be further improved.

Embodiment 2. FIG.
5 is a schematic plan view showing the structure of the sensor according to the present embodiment of the present invention, FIG. 6 is a schematic cross-sectional view taken along line AA in FIG. 5, and FIG. 7 is a schematic cross-sectional view taken along line BB in FIG. 8 is a schematic cross-sectional view taken along the line CC of FIG. This sensor detects acceleration applied in the out-of-plane direction. As in the first embodiment, an example in which polysilicon is used as a material for forming an inertial mass body, wiring, and electrodes will be described.
This sensor has a substrate 1 and a beam structure 60 joined to the substrate 1 via a detection gap 19. The beam structure 60 supports the inertial mass body 10B, two pairs of elastic beams 12 connected to the four corners of the inertial mass body 10B and supporting the inertial mass body 10B above the detection gap 19, and the elastic beam. And two pairs of anchors 13 joined to the substrate 1. Inertial mass body 10B has a pair of movable electrodes 11 formed integrally and a frame portion 10b surrounding the pair of movable electrodes. Further, a weight portion 18B made of a material that is the same as or higher in density than the inertia mass body 10B is formed on the lower portion of the frame portion 10b via a mass body 6 made of the same material as the frame portion. Here, a through hole 1b that accommodates the weight portion 18B in a displaceable manner is formed in the substrate almost directly below the frame portion 10b. The position is lower than the position of the anchor portion 13 that supports the beam. Since the four corners of the frame 10b are supported by elastic beams, the frame 10b can be displaced only in the out-of-plane direction.

The movable electrode 11 is supported symmetrically by a pair of torsion beams 25 serving as a central axis and is suspended above the detection gap 19, while a pair of links disposed away from the frame portion 10 b and the torsion beams 25. The beams 24 are connected. Here, the dimension of the beam is adjusted so that the link beam 24 has rigidity that does not cause bending due to the displacement of the frame body 10b. On the other hand, the torsion beam 25 is adjusted to have a rigidity for displacing the movable electrode 11 only in the movable electrode moving direction 26. The movable electrode 11 faces the fixed electrodes 4a and 4b with the detection gap 19 interposed therebetween. When acceleration is applied in the acceleration detection direction 21, the frame portion 10 b supported by the elastic beam moves in the out-of-plane direction 23. Since the frame portion 10b is connected to the link beam 24 at a position away from the central axis of the movable electrode 11, a displacement moment about the torsion beam 25 acts on the movable electrode 11 due to the displacement of the frame portion 10b. Displacement in the twisting direction 26. For example, as shown in FIG. 6, when the frame portion 10b is displaced upward, the gap between the movable electrode 11 and the fixed electrode 4a is widened, and the gap between the movable electrode 11 and the fixed electrode 4b is narrowed. The acceleration can be detected by converting the differential capacitance change of the two sets of capacitors formed by the movable electrode and the fixed electrode into the acceleration by the detection circuit.
In addition, this sensor can be manufactured with the process similar to the manufacturing method in Embodiment 1 except making the shape of the beam structure A into the shape of the beam structure B.

  According to the present embodiment, it is possible to provide an acceleration sensor capable of detecting out-of-plane acceleration having the same effect as described in the first embodiment.

Embodiment 3 FIG.
9 is a schematic plan view showing the structure of the acceleration sensor according to the present embodiment, FIG. 10 is a schematic cross-sectional view taken along line AA in FIG. 9, and FIG. 11 is a schematic cross-sectional view taken along line BB in FIG.
The sensor according to the present embodiment is the same as the sensor according to the first embodiment except that the movable electrode and the fixed electrode are made of different materials while the fixed electrode protruding from the substrate is opposed to the movable electrode. It has the following structure.

  The beam structure 50C of the present sensor supports an inertial mass body 10C, a pair of elastic beams 12 connected to the inertial mass body 10C and supporting the inertial mass body 10C above the detection gap 19, and the elastic beam. A pair of anchors 13 joined to the substrate 1. The inertial mass body 10C has a base portion 10c that supports a pair of movable electrodes 11 extending on both sides, and a weight portion 18 is provided below the base portion 10c. On the other hand, the fixed electrodes 4c and 4d made of a material different from that of the movable electrode protrude from the substrate 1 into a gap between the upper surface protective substrate 16 and the movable electrode and face the movable electrode 11. Thus, the fixed electrodes 4c and 4d and the movable electrode 11 form two sets of capacitors.

  The manufacturing method of this sensor will be described with reference to the schematic cross-sectional view of FIG. 12 in the case where polysilicon is used for the fixed electrode and single crystal silicon is used for the movable electrode. The left side of FIG. 12 is a cross-sectional view taken along line AA in FIG. 9, and the right side is a cross-sectional view taken along line BB in FIG. The substrate used in the step (a) is an SOI (Silicon On Insulator) substrate in which the oxide film 26 is formed on the single crystal silicon substrate 1 and the single crystal silicon film 26 is formed thereon. The thickness of the single crystal silicon film 26 can be freely set, and can be, for example, several μm to several tens μm. In the step (b), the single crystal silicon film 26 and the oxide film 27 are etched. The single crystal silicon film 26 finally becomes the movable electrode 11 and the elastic beam 12. In step (c), an insulating film 2 such as a silicon nitride film is deposited on the single crystal silicon substrate 1 and patterned. The insulating film 2 is used for electrical insulation from the single crystal silicon substrate 1. In step (d), an insulating film 3 such as a silicon oxide film is deposited and patterned. The insulating film 3 has a role of flattening the lower portion of the bonding frame 14 by eliminating a step due to the polysilicon film of the wiring 5. In step (e), a polysilicon film is deposited and patterned to form wiring 5. In step (f), an insulating film 7 such as a silicon oxide film is deposited and patterned. The insulating film 7 is formed in a region where there is no wiring 5 below the bonding frame 14, and a step due to the wiring 5 is eliminated to flatten the lower part of the bonding frame 14. In step (g), an insulating film 8 such as a silicon nitride film is deposited and patterned. The insulating film 8 is used as a protective film for the insulating film 3 and the insulating film 7 when the wiring 5 is electrically insulated and the sacrificial layer is removed by hydrofluoric acid or the like. In step (h), a sacrificial layer 9 made of phosphosilicate glass or the like is deposited and patterned. The detection gap 19 between the fixed electrode and the movable electrode is determined by the thickness of the sacrificial layer 9. In step (i), a polysilicon film is deposited and patterned to form the fixed electrode 4a, the fixed electrode 4b, the base 10c, the anchor 13, and the joining frame 14. Subsequently, the metal pad 15 is formed. In the step (j), the bonding frame 14 and the upper surface protective substrate 16 are bonded. The upper surface protection substrate 16 is hermetically bonded to the bonding frame 14 by anodic bonding or the like. Next, the single crystal silicon substrate 1 is polished by mechanical polishing, chemical polishing, or the like to a desired thickness of, for example, about several tens of μm to one hundred μm. In step (k), the lower gap 17 is formed on the back surface of the single crystal silicon substrate 1 by dry etching, wet etching, etc., and then the single crystal silicon substrate 1 is through-etched by dry etching or the like to form the weight portion 18c in the single crystal silicon substrate. Separate from 1. The insulating film 3 and the sacrificial layer 9 function as an etching stop layer. Next, in step (l), the sacrificial layer 9 is selectively removed with hydrofluoric acid or the like to form the detection gap 19 and the gap below the elastic beam 12. The lower surface protection substrate 20 is hermetically bonded to the single crystal silicon substrate 1. Finally, the glass on the metal pad 15 is removed by dicing or the like, and the wafer manufacturing process of the acceleration sensor is completed.

  As described above, in the sensor according to the present embodiment, an SOI substrate is used as a substrate, and a movable electrode and an elastic beam are formed with a single crystal silicon film of the SOI substrate, while a fixed electrode is formed with a polysilicon film. Is. By using the SOI substrate, it is possible to form a movable electrode and an elastic beam having an arbitrary thickness, so that it is possible to provide a highly accurate acceleration sensor with high sensitivity to other axes. In addition, since single crystal silicon does not have material fatigue due to crystal grain boundaries or the like, a highly reliable acceleration sensor can be provided when the movable electrode and the elastic beam are formed of single crystal silicon.

  In addition, the sensor of this Embodiment can also be used as an out-of-plane detection acceleration sensor by using the beam structure of Embodiment 2. Also in this case, a highly accurate and reliable acceleration sensor can be provided.

Embodiment 4 FIG.
FIG. 13 is a schematic plan view showing the structure of the acceleration sensor according to the present embodiment, and FIG. 14 is a schematic cross-sectional view taken along line AA of FIG. FIG. 14 shows a state where the upper surface protective substrate is removed.
In the sensor according to the present embodiment, the fixed electrode is composed of a plurality of protruding electrodes arranged with a groove interposed therebetween, and a damper composed of a plurality of protruding pieces is arranged on the movable electrode so as to project into the groove. The structure is the same as that of the sensor of the first embodiment except that it is provided.

  As shown in FIG. 13, a beam structure 50D of the present sensor includes an inertial mass body 10D, a pair of elastic beams 12 connected to the inertial mass body 10D and supporting the inertial mass body 10D above the detection gap 19. And a pair of anchors 13 that support the elastic beams and are joined to the substrate 1. The inertial mass body 10D has a base portion 10d that supports a pair of movable electrodes 11 extending on both sides, and a weight portion 18 is provided below the base portion 10d via the mass body 6. The movable electrode 11 has a damper 40 from a plurality of projecting pieces arranged along the detection direction 21. On the other hand, the fixed electrode 4a is composed of a plurality of protruding electrodes arranged with a groove interposed therebetween, and each protruding piece of the damper is aligned so as to protrude into the groove.

  The dampers are arranged in the groove along the detection direction at regular intervals, have a large area facing the side wall of the groove, and have a high damping effect. Even if an excessive acceleration is applied in the detection direction by the damper, it is possible to suppress the excessive displacement of the movable electrode by the damping effect and prevent the collision between the movable electrode and the joining frame or the upper surface protection substrate. Can be increased.

Embodiment 5 FIG.
FIG. 15 is a schematic cross-sectional view of the acceleration sensor according to the present embodiment.
In the sensor according to the present embodiment, a pair of main surfaces of the inertial mass body that are opposed to each other are movable electrodes, a first fixed electrode that is disposed on the substrate and faces one main surface of the inertial mass body, and a top surface protection The sensor has the same structure as that of the sensor of the first embodiment except that a second fixed electrode is provided on the inner surface of the substrate and faces the other main surface of the inertial mass body.

  As shown in FIG. 15, a pair of opposed principal surfaces of the inertial mass body 10 </ b> A is used as a pair of movable electrodes. On the other hand, the first fixed electrodes 4a and 4b facing the movable electrode 11 on one main surface are provided on the substrate 1, and the second fixed electrodes 4e and 4f facing the movable electrode 11 on the other main surface are provided. It is provided on the inner surface of the upper surface protection substrate 16.

According to this sensor, a change in differential capacitance is detected by disposing a fixed electrode above and below the movable electrode via a gap. However, since the opposing area of the electrode can be increased, the detection capacitance can be increased. Can do. As a result, it is possible to achieve high accuracy by downsizing the sensor and increasing the detection capacity.
In the present embodiment, an example of the in-plane detection acceleration sensor is shown, but the present invention can also be applied to an out-of-plane detection acceleration sensor by using the beam structure according to the second embodiment.

Embodiment 6
FIG. 16 is a schematic cross-sectional view showing the structure of the acceleration sensor according to the present embodiment.
In the sensor according to the present embodiment, a pair of main surfaces of the inertial mass body that are opposed to each other are movable electrodes, a first fixed electrode that is disposed on the substrate and faces one main surface of the inertial mass body, and inertia The sensor has the same structure as that of the sensor of the first embodiment except that a second fixed electrode that protrudes from the substrate and faces the other main surface of the inertial mass body is provided in the gap between the mass body and the upper surface protection substrate. .

  As shown in FIG. 16, a pair of opposed principal surfaces of the inertial mass body 10 </ b> A is used as a pair of movable electrodes. In contrast, the first fixed electrodes 4a and 4b facing the movable electrode 11 on one main surface are provided on the substrate 1, and the second fixed electrodes 4e and 4f facing the movable electrode 11 on the other main surface side. Are provided in the gap between the inertial mass body 10A and the upper surface protection substrate 16 from the substrate 1 and are provided with second fixed electrodes 4c and 4d facing the other main surface of the inertial mass body 10A. Here, the second fixed electrodes 4 c and 4 d are disposed on the spacer 28 and the insulating film 29 made of the same material as the movable electrode 11. Further, the detection gap 19 between the first fixed electrodes 4a and 4b and the movable electrode 11 is formed by sacrificial layer etching.

According to this sensor, as in the case of the fifth embodiment, a change in differential capacitance is detected by arranging fixed electrodes above and below the movable electrode via a gap, but the opposing area of the electrode can be increased. As a result, the detection capacity can be increased. As a result, it is possible to achieve high accuracy by downsizing the sensor and increasing the detection capacity.
In the present embodiment, an example of the in-plane detection acceleration sensor is shown, but the present invention can also be applied to an out-of-plane detection acceleration sensor by using the beam structure according to the second embodiment.

Embodiment 7 FIG.
FIG. 17 is a schematic cross-sectional view showing the structure of the acceleration sensor according to the present embodiment.
The sensor according to the present embodiment has the same structure as that of the sensor of the first embodiment except that the metal weight 30 is used for a part or all of the weight portion 18e. The metal weight 30 may be formed by plating copper, nickel, gold or the like, or a solder material such as Sn0.75Cu0.25 may be melted and embedded in the weight portion. Since the density of copper 8.96, nickel 8.90, gold 19.32, Sn0.75Cu0.25 7.32 is high compared to the density of single crystal silicon 2.33g / cm3, an inertial mass body with sufficient inertial mass is suppressed by suppressing an increase in area. Can be formed. This makes it possible to reduce the size and sensitivity of the sensor.
In the present embodiment, an example of the in-plane detection acceleration sensor is shown, but the present invention can also be applied to an out-of-plane detection acceleration sensor by using the beam structure according to the second embodiment.

Embodiment 8 FIG.
The acceleration sensor according to the present embodiment has the same structure as that of the sensor of the first embodiment except that a through conductor is provided on the substrate and the fixed electrode and the lower surface protection substrate are electrically connected.
FIG. 18 is a schematic cross-sectional view showing the structure of the acceleration sensor according to the present embodiment. A through hole is formed in the single crystal silicon substrate 1, and an insulating film 31 and a through wiring 32 are embedded in the through hole. The through hole is formed simultaneously with the through etching at the time of forming the weight portion, and after depositing the insulating film 31 on the inner wall of the through hole by sputtering, CVD or the like, the through wiring 32 is formed by plating, solder melting or the like. Metal bumps 33 are provided on the through wiring 32. The single crystal silicon substrate 1 is hermetically bonded to the detection circuit substrate 34 and the sealing material 36. The bonding between the substrates using the sealing material 36 uses an organic adhesive, silicon-metal eutectic bonding, frit glass bonding, anodic bonding using a glass thin film, or the like. The metal bumps 33 are electrically connected to the detection circuit electrode pads 35 on the detection circuit board 34.

  According to the present embodiment, the wiring 5 and the electrode pad 15 in the first embodiment are not necessary, and the sensor can be miniaturized. In addition, since the wiring length from the movable electrode and the fixed electrode to the detection circuit is short and does not include the wire bonding portion, the parasitic capacitance is reduced and a highly accurate sensor can be provided. Furthermore, since the detection circuit board also serves as a protective board, the number of members can be reduced, and a cheaper acceleration sensor can be provided. Furthermore, by integrating the detection circuit board and the sensor, the package can be further reduced in size, and the sensor can be reduced in price and size.

Embodiment 9 FIG.
The acceleration sensor according to the present embodiment is an acceleration sensor that detects three-axis acceleration components orthogonal to each other, and includes two detection units that detect biaxial acceleration in an in-plane direction parallel to the substrate and a substrate perpendicular to the substrate. A single detection unit for detecting a single axis acceleration in the out-of-plane direction is formed on the same substrate.

  FIG. 19 is a schematic plan view showing an example of the structure of the acceleration sensor according to the present embodiment. Reference numerals 37 and 38 denote detection units composed of in-plane detection acceleration sensors according to the first embodiment, which are arranged so that detection directions are orthogonal to each other. On the other hand, 39 is a detection unit comprising an out-of-plane detection acceleration sensor according to the second embodiment. These three detectors are formed on the same substrate, and the joint frame 14 and the upper and lower protective substrates are shared.

According to this sensor, it is possible to provide a much simpler and cheaper triaxial acceleration sensor than a triaxial acceleration sensor that combines individual packaged sensors. Since each of the detection units 37 to 39 senses only the acceleration of the detection axis and does not react to accelerations other than the detection axis, it is possible to realize a highly accurate three-axis acceleration sensor with very good sensitivity on other axes.
In this embodiment, the case of detecting the acceleration in the triaxial direction has been described. However, the two axes in the in-plane direction, or the two axes for detecting the acceleration in the in-plane direction and the one axis in the out-of-plane direction. The acceleration sensor can also be realized by combining the detection units 37 and 38, or the combination of the 37 or 38 detection unit and the 39 detection unit.

It is a schematic plan view which shows the structure of the acceleration sensor which concerns on Embodiment 1 of this invention. It is an AA line schematic cross section of FIG. It is a BB line schematic cross section of FIG. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 1 of this invention. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 1 of this invention. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 1 of this invention. It is a schematic plan view which shows the structure of the acceleration sensor which concerns on Embodiment 2 of this invention. It is an AA line schematic cross section of FIG. FIG. 6 is a schematic cross-sectional view taken along line B-B in FIG. 5. FIG. 6 is a schematic cross-sectional view taken along the line C-C in FIG. 5. It is a schematic plan view which shows the structure of the acceleration sensor which concerns on Embodiment 3 of this invention. FIG. 10 is a schematic cross-sectional view taken along line AA in FIG. 9. FIG. 10 is a schematic cross-sectional view taken along line BB in FIG. 9. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 3 of this invention. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 3 of this invention. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 3 of this invention. It is a schematic cross section which shows the manufacturing process of the acceleration sensor which concerns on Embodiment 3 of this invention. It is a schematic plan view which shows the structure of the acceleration sensor which concerns on Embodiment 4 of this invention. It is an AA line schematic cross section of FIG. It is a schematic cross section which shows the structure of the acceleration sensor which concerns on Embodiment 5 of this invention. It is a schematic cross section which shows the structure of the acceleration sensor which concerns on Embodiment 6 of this invention. It is a schematic cross section which shows the structure of the acceleration sensor which concerns on Embodiment 7 of this invention. It is a schematic cross section which shows the structure of the acceleration sensor which concerns on Embodiment 8 of this invention. It is a schematic plan view which shows the structure of the acceleration sensor which concerns on Embodiment 9 of this invention.

Explanation of symbols

1 substrate, 1a, 1b, 1c recess, 2, 3, 7, 8 insulating film, 4a, 4b, 4c, 4d, 4e, 4f fixed electrode, 5 wiring, 6 mass body, 9 sacrificial layer, 10A, 10B, 10C , 10D inertial mass, 10a, 10b, 10c, 10d base, 11 movable electrode, 12 elastic beam, 13 anchor, 14 joint frame, 15 metal pad, 16 upper surface protection substrate, 17 lower gap, 18a, 18b, 18c, 18e Weight part, 19 detection gap, 20 lower surface protection substrate, 21 acceleration detection direction, 22 inertia mass body center of gravity, 23 inertia mass body displacement direction, 24 link beam, 25 torsion beam, 26 movable electrode displacement direction, 27 oxide film, 28 spacer 29, 31 Insulating film, 30 Metal weight, 32 Through wiring, 33 Metal bump, 34 Detection circuit board, 35 Detection circuit electrode pad, 36 Sealing material 37,38 In-plane acceleration detector, 39 Out-of-plane acceleration detector, 40 Damper, 50A, 50B, 50C, 50D Conductive beam structure.

Claims (16)

  1.   A substrate having at least one pair of fixed electrodes, and an inertial mass body that is supported by an elastic beam supported by an anchor on the substrate and includes a movable electrode facing the fixed electrode. A capacitive acceleration sensor having a weight portion made of one or more materials that are the same as or higher in density than the inertial mass at the lower part.
  2.   2. The capacitive acceleration sensor according to claim 1, wherein a concave portion for displacably accommodating the weight portion is provided on the surface of the substrate, and the center of gravity of the inertial mass body is located below the anchor.
  3.   The capacitive acceleration sensor according to claim 1, wherein the inertial mass body has a base portion that supports the movable electrode and has the weight portion, and the base portion is supported by the elastic beam.
  4. The inertial mass body has a frame portion surrounding the movable electrode and having the weight portion,
    A center portion of the movable electrode is supported by a pair of torsion beams and is suspended above the detection gap, while a pair of link beams are provided so that the movable electrode and the frame portion are spaced apart from the torsion beams. The capacitive acceleration sensor according to claim 1, wherein the capacitive acceleration sensor is connected by the following.
  5.   Each of the fixed electrodes is composed of a plurality of projecting electrodes disposed with a groove interposed therebetween, and a damper portion composed of a plurality of projecting pieces is disposed on the movable electrode so as to project into the groove. The capacitive acceleration sensor according to any one of claims 1 to 4.
  6.   A pair of principal surfaces opposite to each other of the inertial mass body are formed as movable electrodes, a first fixed electrode disposed on the substrate and opposed to the movable electrode on one principal surface, and the other one protruding from the substrate. The capacitive acceleration sensor according to claim 1, further comprising a second fixed electrode facing the movable electrode on the main surface.
  7. On the upper surface of the substrate, while bonding an upper surface protection substrate that protects the structure through a gap,
    7. The capacitive acceleration sensor according to claim 6, wherein at least one pair of fixed electrodes provided on the inner surface of the upper surface protective substrate is used in place of the second fixed electrode.
  8.   8. The capacitive acceleration sensor according to claim 1, wherein the inertia mass body is made of polysilicon, and the weight portion is made of single crystal silicon.
  9.   The capacitive acceleration sensor according to claim 1, wherein the weight portion includes a metal material.
  10. A capacitive acceleration sensor that detects acceleration components in three orthogonal axes,
    Having three types of conductive beam structures bonded to each other by providing a detection gap on a substrate having at least three pairs of fixed electrodes;
    The three types of conductive beam structures are first, second, and third conductive beam structures that detect acceleration components in the x, y, and z directions, respectively.
    Each conductive beam structure includes an inertial mass body that can be displaced by acceleration, at least a pair of elastic beams that are connected to the inertial mass body and support the inertial mass body above the detection gap, and supports the elastic beams. And at least a pair of anchors joined to the substrate, and a part of the inertial mass body is opposed to the fixed electrode to form a movable electrode, and the movable electrode and the fixed electrode form a differential capacitance. On the other hand, the lower part of the inertial mass body has a weight part made of one or more kinds of materials that are the same as or higher in density than the inertial mass body,
    Further, the inertia mass bodies of the first and second conductive beam structures are provided with a base portion that supports each of the movable electrodes and has the weight portion, and the base portion is supported by the elastic beam,
    The inertia mass body of the third conductive beam structure is provided with a frame portion surrounding the movable electrode and having the weight portion, and the central portion of the movable electrode is supported by a pair of torsion beams and the detection is performed. While suspended above the gap, the movable electrode and the frame portion are connected by a pair of link beams arranged apart from the torsion beam,
    Furthermore, a capacitive acceleration sensor in which the first and second conductive beam structures are arranged so as to be orthogonal to each other.
  11.   11. The upper surface protection substrate for protecting the structure by providing a gap on the upper surface of the substrate is bonded, and the lower surface protection substrate is bonded to the entire lower surface of the substrate. The capacitive acceleration sensor described in 1.
  12.   12. The capacitive acceleration sensor according to claim 11, wherein a wiring for connecting the movable electrode and the fixed electrode to the electrode pad is provided on the upper surface of the substrate, and the wiring is covered with an insulating layer and taken out as an embedded wiring.
  13.   12. The capacitive acceleration sensor according to claim 11, wherein a through hole provided in the substrate is filled with a conductor to form a through wire, and the through wire is electrically connected to the lower surface protection substrate.
  14.   The capacitive acceleration sensor according to claim 12 or 13, wherein a differential capacitance detection circuit is provided on the upper surface protection substrate and / or the lower surface protection substrate.
  15. A substrate having a fixed electrode and having a pair of opposing main surfaces; and an inertial mass body provided with a movable electrode suspended on the substrate by a beam and facing the fixed electrode; and below the inertial mass body Is a method of manufacturing a capacitive acceleration sensor having a weight part made of one or more materials that are the same as or higher in density than the inertial mass,
    A first insulating layer is laminated on one main surface of the substrate, and an opening is provided in a connection region between the weight portion and the inertia mass body,
    A first conductive layer is laminated in a predetermined region of the opening and the first insulating layer, and a connection portion between the weight portion and the inertia mass body is formed in the opening, while the first insulating layer A fixed electrode is formed in a predetermined area,
    A sacrificial layer is laminated so as to separate the fixed electrode and the connection portion and cover the fixed electrode,
    A second conductive layer is laminated so as to cover the connection portion and the sacrificial layer to form an inertial mass body having a movable electrode,
    The weight portion is separated from the substrate by penetrating etching from the other main surface of the substrate,
    Next, a method of manufacturing a capacitive acceleration sensor in which the sacrificial layer is removed by etching, the fixed electrode and the movable electrode are opposed to each other through a gap, and the inertial mass body is movable.
  16. A substrate having a fixed electrode and having a pair of opposing main surfaces; and an inertial mass body provided with a movable electrode suspended on the substrate by a beam and facing the fixed electrode; and below the inertial mass body Is a method of manufacturing a capacitive acceleration sensor having a weight portion made of one or more kinds of materials that are the same as or higher in density than the inertial mass,
    A SOI substrate in which a single crystal silicon layer is formed on one main surface of the single crystal silicon substrate via a silicon oxide layer is etched to form a movable electrode made of single crystal silicon, the weight portion, and the inertial mass body. An opening is provided in the connection area with
    A sacrificial layer is provided on the movable electrode,
    A polysilicon layer is laminated so as to cover the opening and the sacrificial layer to form the inertial mass body having a fixed electrode,
    Penetrating etching from the other main surface of the single crystal silicon substrate to separate the weight from the single crystal silicon substrate;
    Next, a method of manufacturing a capacitive acceleration sensor in which the sacrificial layer is removed by etching, the fixed electrode and the movable electrode are opposed to each other through a gap, and the inertial mass body is movable.

JP2004057303A 2004-03-02 2004-03-02 Capacity type acceleration sensor Pending JP2005249454A (en)

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JP2007194611A (en) * 2005-12-22 2007-08-02 Seiko Instruments Inc Three-dimensional wiring and its manufacturing method, and dynamic quantity sensor and its manufacturing method
JP2007245339A (en) * 2006-03-16 2007-09-27 Commiss Energ Atom Microelectronic composite, especially packaging structure in sealing cavity of mems
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JP2008170383A (en) * 2007-01-15 2008-07-24 Dainippon Printing Co Ltd Single-axis semiconductor acceleration sensor
WO2008093693A1 (en) * 2007-02-02 2008-08-07 Alps Electric Co., Ltd. Electrostatic capacitance type acceleration sensor
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WO2009090841A1 (en) * 2008-01-15 2009-07-23 Alps Electric Co., Ltd. Electrostatic capacity type acceleration sensor
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JP2012515903A (en) * 2009-01-21 2012-07-12 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh Yaw rate sensor
CN102778586A (en) * 2012-08-13 2012-11-14 中国科学院上海微系统与信息技术研究所 Differential capacitive micro-acceleration transducer and manufacturing method thereof
KR101854604B1 (en) 2010-04-30 2018-05-04 퀄컴 엠이엠에스 테크놀로지스 인크. Micromachined piezoelectric three-axis gyroscope and stacked lateral overlap transducer (slot) based three-axis accelerometer
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JP2007245339A (en) * 2006-03-16 2007-09-27 Commiss Energ Atom Microelectronic composite, especially packaging structure in sealing cavity of mems
JP2008051685A (en) * 2006-08-25 2008-03-06 Dainippon Printing Co Ltd Sensor unit and its manufacturing method
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US8329491B2 (en) * 2006-11-20 2012-12-11 Dai Nippon Printing Co., Ltd. Mechanical quantity sensor and method of manufacturing the same
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WO2008093693A1 (en) * 2007-02-02 2008-08-07 Alps Electric Co., Ltd. Electrostatic capacitance type acceleration sensor
US8240205B2 (en) 2007-06-26 2012-08-14 Dai Nippon Printing Co., Ltd. Mechanical quantity sensor and method of manufacturing the same
US8250918B2 (en) 2007-06-26 2012-08-28 Dai Nippon Printing Co., Ltd. Mechanical quantity sensor and method of manufacturing the same
WO2009001830A1 (en) * 2007-06-26 2008-12-31 Dai Nippon Printing Co., Ltd. Mechanical quantity sensor and its manufacturing method
WO2009001815A1 (en) * 2007-06-26 2008-12-31 Dai Nippon Printing Co., Ltd. Mechanical quantity sensor and its manufacturing method
JP2009109348A (en) * 2007-10-30 2009-05-21 Yokogawa Electric Corp Infrared light source
US7878061B2 (en) * 2007-12-18 2011-02-01 Robert Bosch Gmbh Micromechanical system including a suspension and an electrode positioned movably
WO2009090841A1 (en) * 2008-01-15 2009-07-23 Alps Electric Co., Ltd. Electrostatic capacity type acceleration sensor
JP2009168777A (en) * 2008-01-21 2009-07-30 Hitachi Ltd Inertial sensor
JP2009276305A (en) * 2008-05-19 2009-11-26 Mitsutoyo Corp Mems acceleration sensor
JP2012515903A (en) * 2009-01-21 2012-07-12 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングRobert Bosch Gmbh Yaw rate sensor
US8695425B2 (en) 2009-01-21 2014-04-15 Robert Bosch Gmbh Yaw rate sensor
WO2011111541A1 (en) * 2010-03-09 2011-09-15 アルプス電気株式会社 Mems sensor
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JP5627669B2 (en) * 2010-03-09 2014-11-19 アルプス電気株式会社 MEMS sensor
US10209072B2 (en) 2010-04-30 2019-02-19 Snaptrack Inc. Stacked lateral overlap transducer (SLOT) based three-axis accelerometer
KR101854604B1 (en) 2010-04-30 2018-05-04 퀄컴 엠이엠에스 테크놀로지스 인크. Micromachined piezoelectric three-axis gyroscope and stacked lateral overlap transducer (slot) based three-axis accelerometer
CN102778586A (en) * 2012-08-13 2012-11-14 中国科学院上海微系统与信息技术研究所 Differential capacitive micro-acceleration transducer and manufacturing method thereof
WO2019220202A1 (en) 2018-05-15 2019-11-21 Murata Manufacturing Co., Ltd. Vibration damping in mems acceleration sensors

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