CN116827301A - MEMS resonator and preparation method thereof - Google Patents
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Abstract
The application relates to the technical field of resonators, and discloses an MEMS resonator and a preparation method thereof, wherein the MEMS resonator comprises: an upper chip provided with a temperature measuring resonance unit, a lower chip provided with a frequency transmission resonance unit, and a bonding layer arranged between the upper chip and the lower chip; the upper chip and the lower chip are vertically buckled into a whole through the bonding layer, and the temperature measuring resonance unit and the frequency transmission resonance unit are arranged face to face; the silicon channel comprises an outer ring channel for driving and sensing the temperature-measuring resonance unit and an inner circular channel which is arranged in the outer ring channel and used for driving and sensing the frequency-transmitting resonance unit, and the inner circular channel penetrates through the upper chip and is connected with the frequency-transmitting resonance unit through the bonding layer. The application improves the temperature measurement accuracy and the temperature measurement sensitivity of the resonator.
Description
Technical Field
The application relates to the technical field of resonators, in particular to an MEMS resonator and a preparation method thereof.
Background
Microelectromechanical systems (Micro-Electro-Mechanical System, MEMS) oscillators based on silicon technology are important elements of Micro-systems that are widely used, wherein the error between the output frequency and the nominal frequency of a temperature compensated MEMS oscillator (TCXO) is mainly affected by the temperature measurement accuracy and the temperature measurement resolution of a temperature measurement sensor; from the principle of temperature measurement, the accuracy of temperature measurement is often influenced by thermal coupling factors between a temperature measurement sensor and a device to be measured, and the resolution of temperature measurement is influenced by the sensitivity of the temperature measurement sensor; the temperature measuring sensor based on the resonator principle outputs a frequency quasi-digital signal, is not easily influenced by environmental interference factors, and therefore has good temperature measuring stability, and is applied to MEMS clock products.
In the current MEMS clock products, two resonator units are usually processed on the same wafer substrate, wherein one of the resonator units has a smaller TCF (Temperature Coefficient of Frequency) coefficient than the other resonator unit, a resonator unit with a larger TCF coefficient is used for measuring temperature, and a resonator unit with a smaller TCF coefficient is used as a frequency output source; however, this method has two disadvantages: firstly, in practical application, in order to meet the processing requirement, a certain distance is required to be kept between two resonator units, and the distance is generally more than 50um, so that certain thermal gradient and thermal coupling error still exist between the resonator units, and the temperature measurement accuracy is limited; secondly, a resonator unit with a small TCF coefficient is obtained by adopting a secondary heavy doping technology, and the secondary heavy doping is required to be carried out under the condition of higher doping concentration (such as 2e19cm -3 ) As a result, the TCF coefficient of another resonator unit as a temperature measurement is difficult to be made large, typically around-10 ppm/K, resulting in limited sensitivity of the temperature measurement.
Therefore, how to further improve the temperature measurement accuracy and the temperature measurement sensitivity of the resonator is one of the technical problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the application provides a MEMS resonator and a preparation method thereof, so as to improve the temperature measurement accuracy and the temperature measurement sensitivity of the resonator.
To achieve the above object, according to a first aspect, the following technical solution is adopted:
a MEMS resonator comprising: an upper chip provided with a temperature measuring resonance unit, a lower chip provided with a frequency transmission resonance unit and a bonding layer arranged between the upper chip and the lower chip; the upper chip and the lower chip are vertically buckled and packaged into a whole through the bonding layer, and the temperature measuring resonance unit and the frequency transmission resonance unit are arranged face to face; the upper chip is provided with a silicon channel, the silicon channel comprises an outer ring channel used for driving and sensing the temperature measuring resonance unit and an inner circular channel which is arranged in the outer ring channel and used for driving and sensing the frequency transmission resonance unit, and the inner circular channel penetrates through the upper chip and is connected with the frequency transmission resonance unit through the bonding layer.
The application is further provided with: the upper chip comprises a first SOI substrate doped with intrinsic concentration, and the temperature-measuring resonance unit is positioned on the first SOI substrate and comprises at least two temperature-measuring vibration rings, a temperature-measuring anchor point and a temperature-measuring coupling beam; the temperature measuring vibration ring is overlapped with the axis of the external ring channel; the two temperature measuring vibrating rings are connected through the temperature measuring coupling beam, and the temperature measuring coupling beam is fixed on the first SOI substrate through the temperature measuring anchor point.
The application is further provided with: the part of the external ring channel extending to the temperature measuring vibration ring is used as a driving electrode and an induction electrode of the temperature measuring vibration ring.
The application is further provided with: the lower chip comprises a second SOI substrate with heavy concentration doping, the frequency transmission resonance unit is positioned on the second SOI substrate and comprises at least two frequency transmission vibration rings, a frequency transmission anchor point and a frequency transmission coupling beam, and the frequency transmission vibration rings are overlapped with the axle center of the internal circular channel; the two frequency transmission vibrating rings are connected through the frequency transmission coupling beam, and the frequency transmission coupling beam is fixed on the second SOI substrate through the frequency transmission anchor point.
The application is further provided with: and a functional electrode is arranged in the frequency transmission vibration ring, and the internal circular channel is electrically connected with the functional electrode in a bonding way through the bonding layer and is used for driving and sensing the frequency transmission resonance unit.
The application is further provided with: the silicon channel comprises an anchor point bias channel which is communicated with the temperature measurement anchor point and the frequency transmission anchor point.
The application is further provided with: the silicon channel further comprises a grounding channel, the bonding layer comprises a bonding ring wound between the upper chip and the lower chip, and the grounding channel is communicated with the bonding ring.
The application is further provided with: the temperature measuring resonance unit and the frequency transmission resonance unit have the same structure and/or the same frequency.
According to a second aspect, the technical scheme adopted is as follows:
a method of making a MEMS resonator comprising:
providing an upper chip, and forming a temperature measuring resonance unit in the upper chip;
providing a lower chip, and forming a frequency transmission resonance unit in the lower chip;
the upper chip and the lower chip are vertically buckled and packaged into a whole through a bonding layer, and the temperature measuring resonance unit and the frequency transmission resonance unit are arranged face to face;
and a silicon channel for driving and sensing the temperature-measuring resonance unit and the frequency-transmitting resonance unit is formed on the upper chip, the silicon channel comprises an outer ring channel for driving and sensing the temperature-measuring resonance unit and an inner circular channel which is arranged in the outer ring channel and used for driving and sensing the frequency-transmitting resonance unit, and the inner circular channel passes through the upper chip and is connected with the frequency-transmitting resonance unit through the bonding layer.
The application is further provided with: the method for forming the silicon channel specifically comprises the following steps:
etching an initial channel on the bottom surface of the first SOI substrate of the upper chip;
depositing an insulating medium layer on the side wall of the initial channel, and filling in-situ doped polysilicon into the initial channel based on the insulating medium layer to obtain an intermediate channel;
photoetching and etching a matching channel which is used for communicating the middle channel on the first SOI substrate and at a position corresponding to the middle channel;
and filling the in-situ doped polycrystalline silicon in the matching channel to obtain a silicon channel.
The application is further provided with: the method for forming the temperature-measuring resonance unit specifically comprises the following steps:
photoetching and etching a resonant structure on the first SOI substrate;
and removing the SiO2 insulating layer structure interfering the active space of the resonance structure to obtain the temperature-measuring resonance unit.
The application is further provided with: after the upper chip and the lower chip are vertically buckled and packaged into a whole through the bonding layer, the method further comprises the following steps:
forming a first bus line layer for connecting the external ring channel on the bottom surface of the first SOI substrate, and depositing a silicon oxide insulating layer on the first bus line layer;
forming a second flat cable layer on the silicon oxide insulating layer for connecting the internal circular channel;
and depositing a protective layer on the bottom surface of the first SOI substrate, and etching to expose the back electrode interface.
In summary, compared with the prior art, the application discloses a MEMS resonator and a preparation method thereof, wherein the MEMS resonator comprises an upper chip, a lower chip and a bonding layer, and the upper chip and the lower chip are vertically buckled and packaged into a whole under the action of the bonding layer, so that a temperature measuring resonance unit and a frequency transmission resonance unit are arranged face to face and the interval distance between the temperature measuring resonance unit and the frequency transmission resonance unit is optimized, and the vertical distance between the temperature measuring resonance unit and the frequency transmission resonance unit is 2um-3 um. By the arrangement, the thermal coupling effect of the temperature measuring resonance unit and the frequency transmission resonance unit is improved, and the temperature measuring sensitivity and the temperature measuring stability of the temperature measuring resonance unit and the frequency transmission resonance unit are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings needed in the description of the embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the overall structure of a MEMS resonator of the present embodiment;
fig. 2 is a schematic structural diagram of a first chip on chip of the present embodiment;
FIG. 3 is a schematic diagram of the structure of the lower chip of the present embodiment;
fig. 4 is a schematic structural diagram of a second chip on chip of the present embodiment;
FIG. 5 is a graph showing the frequency-temperature drift of the temperature-measuring resonance unit of the present embodiment;
FIG. 6 is a graph showing the frequency-temperature drift of the frequency-transmitting resonance unit of the present embodiment;
FIG. 7 is a thermal temperature differential profile of the MEMS resonator of the present embodiment;
FIG. 8 is a flowchart of a MEMS resonator manufacturing method of the present embodiment;
fig. 9 a-9 j are sectional views of the step structure of the MEMS resonator manufacturing method of the present embodiment.
Reference numerals: 1. a temperature-measuring resonance unit; 2. a frequency transmission resonance unit; 3. a first SOI substrate; 4. a second SOI substrate; 5. a back electrode interface; 6. a first flat cable layer; 7. a silicon oxide insulating layer; 8. a second flat cable layer; 9. a protective layer; 10. a chip is arranged; 11. a temperature measuring vibration ring; 12. a temperature measurement anchor point; 13. a temperature measuring coupling beam; 20. a lower chip; 21. a frequency transmission vibrating ring; 22. a frequency transmission anchor point; 23. a frequency transmission coupling beam; 30. a bonding layer; 31. a bonding ring; 40. a silicon channel; 41. an outer ring channel; 42. an inner circular channel; 43. the anchor point biases the channel; 44. a ground path; 51. an ac drive electrode interface; 52. an ac induction electrode interface; 53. a DC bias electrode interface; 54. a ground electrode interface; 101. a resonant structure; 102. a SiO2 insulating layer structure; 211. a functional electrode; 401. an initial channel; 402. an insulating dielectric layer; 403. an intermediate channel; 404. matching channels.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element defined by the phrase "comprising one … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element, and furthermore, elements having the same name in different embodiments of the application may have the same meaning or may have different meanings, the particular meaning of which is to be determined by its interpretation in this particular embodiment or by further combining the context of this particular embodiment.
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the following description, suffixes such as "module", "part" or "unit" for representing elements are used only for facilitating the description of the present application, and have no specific meaning per se. Thus, "module," "component," or "unit" may be used in combination.
In the description of the present application, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "left", "right", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The technical scheme shown in the application will be described in detail through specific examples. The following description of the embodiments is not intended to limit the priority of the embodiments.
Referring to fig. 1, a schematic diagram of an overall structure of a MEMS resonator according to the present application includes an upper chip 10, a lower chip 20, a bonding layer 30 disposed between the upper chip 10 and the lower chip 20, a temperature measuring resonance unit 1 disposed in the upper chip 10, a frequency transmission resonance unit 2 disposed in the lower chip 20,
the upper chip 10 and the lower chip 20 are vertically buckled and packaged into a whole through the bonding connection of the bonding layer 30, and the temperature-measuring resonance unit 1 and the frequency-transmission resonance unit 2 are arranged face to face, namely, the spacing distance between the temperature-measuring resonance unit 1 and the frequency-transmission resonance unit 2 is vertically integrated through the bonding layer 30, so that the thermal coupling effect between the temperature-measuring resonance unit 1 and the frequency-transmission resonance unit 2 is improved.
As an example, the bonding connection of the bonding layer 30 adopts wafer-level bonding technology, so as to ensure that the upper chip 10 and the lower chip 20 are vertically buckled into a whole, and simultaneously ensure the vertical interval distance between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
Further, the vertical spacing distance between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 of the upper chip 10 and the lower chip 20 which are connected by the bonding of the bonding layer 30 is 2um-3um, so that the thermal coupling effect between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 is optimized.
As an example, the surface of the upper chip 10 where the temperature-measuring resonance unit 1 is processed is bonded with the surface of the lower chip 20 where the frequency-transmitting resonance unit 2 is processed, so as to achieve the effect that the vertical interval between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 is minimum.
In a specific implementation process, the upper chip 10 is provided with a silicon channel 40, referring to fig. 2 to 4, the silicon channel 40 includes an outer ring channel 41 and an inner circular channel 42 disposed in the outer ring channel 41, the outer ring channel 41 and the inner circular channel 42 keep a distance, that is, the silicon channel 40 is in a double-layer structure design, wherein the outer ring channel 41 is used for driving and sensing the temperature measuring resonance unit 1, the inner circular channel 42 is used for driving and sensing the frequency transmitting resonance unit 2, and the temperature difference between the upper chip 10 and the lower chip 20 is reduced through the structure design of the outer ring channel 41 and the inner circular channel 42, so as to improve the temperature measuring accuracy of the MEMS resonator.
In some embodiments, one end of the outer ring channel 41 and one end of the inner circular channel 42 are electrically connected to the back electrode interface 5 provided on the upper chip 10 by a flat cable so as to externally connect functional circuits via the back electrode interface 5.
In some embodiments, the ends of the outer ring channel 41 and the inner circular channel 42 that are electrically connected to the back electrode interface 5 protrude from the upper chip 10 to facilitate routing.
It should be noted that, the inner circular channel 42 passes through the upper chip 10 and is connected with the frequency transmission resonance unit 2 through the bonding layer 30, that is, through this arrangement, the inner circular channel 42 can conduct the heat generated by the frequency transmission resonance unit 2 to the temperature measurement resonance unit 1 in the process of driving and sensing the frequency transmission resonance unit 2, so as to enhance the thermal coupling between the temperature measurement resonance unit 1 and the frequency transmission resonance unit 2, reduce the temperature difference between the two, and improve the temperature measurement accuracy of the MEMS resonator.
It should be noted that the structures of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 may be the same or different, and the frequencies of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 may be the same or different, but in the spatial structure, the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 are arranged face to face, so as to facilitate the vertical packaging of the upper chip 10 and the lower chip 20, and the internal circular channel 42 is connected with the frequency-transmitting resonance unit 2 via the bonding layer 30, so as to enhance the thermal coupling between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
In some embodiments, the frequency-transmitting resonance unit 2 may also be located directly below the temperature-measuring resonance unit 1 and coincide with the vertical projection of the temperature-measuring resonance unit 1, so as to facilitate the vertical packaging of the upper chip 10 and the lower chip 20, and the internal circular channel 42 is connected with the frequency-transmitting resonance unit 2 via the bonding layer 30, so as to enhance the thermal coupling between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
In a specific implementation process, the upper chip 10 includes a first SOI substrate 3 doped with intrinsic concentration, the thermometric resonance unit 1 is located on the first SOI substrate 3, and the thermometric resonance unit 1 includes at least two thermometric vibration rings 11, a thermometric anchor point 12 and a thermometric coupling beam 13, where the thermometric vibration rings 11 are coincident with the axis of the external ring channel 41, so as to drive the thermometric vibration rings 11 to resonate or sense temperature through the external ring channel 41.
Further, the two temperature-measuring vibrating rings 11 are connected through the temperature-measuring coupling beam 13, the temperature-measuring coupling beam 13 is fixed on the first SOI substrate 3 through the temperature-measuring anchor point 12, wherein the part of the outer ring channel 41 extending into the temperature-measuring vibrating ring 11 is used as a driving electrode and an induction electrode of the temperature-measuring vibrating ring 11, so that the temperature-measuring vibrating ring 11 is driven to resonate or sense temperature through the outer ring channel 41, and the function of the temperature-measuring resonance unit 1 is realized.
In some embodiments, the thermometric anchor point 12 is located between at least two thermometric vibrating rings 11 or at the center of the first SOI substrate 3, so as to be fixed on the first SOI substrate 3 and connected to the thermometric vibrating rings 11 through the thermometric coupling beam 13.
In a specific implementation process, the lower chip 20 includes a heavily doped second SOI substrate 4, the frequency transmission resonant unit 2 is located on the second SOI substrate 4, and the frequency transmission resonant unit 2 includes at least two frequency transmission resonant rings 21, a frequency transmission anchor point 22 and a frequency transmission coupling beam 23, where the frequency transmission resonant rings 21 are coincident with the axes of the internal circular channels 42, so as to drive the frequency transmission resonant rings 21 to resonate or sense temperature through the internal circular channels 42.
Further, the two frequency transmission vibrating rings 21 are connected through the frequency transmission coupling beam 23, the frequency transmission coupling beam 23 is fixed on the second SOI substrate 4 through the frequency transmission anchor point 22, wherein the frequency transmission vibrating ring 21 is internally provided with the functional electrode 211, the inner circular channel 42 is electrically connected with the functional electrode 211 in a bonding way through the bonding layer 30, so that the frequency transmission vibrating ring 21 is driven to resonate or sense temperature through the inner circular channel 42, and the function of the frequency transmission resonant unit 2 is realized.
In some embodiments, the frequency transmission anchor 22 is located between at least two frequency transmission vibration rings 21 or at the center of the second SOI substrate 4, so as to be fixed on the second SOI substrate 4 and connected to the frequency transmission vibration rings 21 through the frequency transmission coupling beam 23.
It should be noted that, the inner circular channel 42 is disposed in the outer annular channel 41 and is electrically connected with the functional electrode 211 through the bonding layer 30 after passing through the upper chip 10, so that in the process of driving and sensing the frequency-transmission resonance unit 2, heat generated by the frequency-transmission resonance unit 2 can be conducted to the temperature-measurement resonance unit 1, thermal coupling between the temperature-measurement resonance unit 1 and the frequency-transmission resonance unit 2 is enhanced, and temperature difference between the temperature-measurement resonance unit 1 and the frequency-transmission resonance unit 2 is reduced, thereby improving temperature measurement accuracy and temperature measurement sensitivity of the MEMS resonator.
It is understood that the temperature-measuring vibration ring 11 of the temperature-measuring resonance unit 1 and the frequency-transmitting vibration ring 21 of the frequency-transmitting resonance unit 2 of the present embodiment may be plural, and are respectively driven or sensed by the outer ring channel 41 and the inner ring channel 42 of the silicon channel 40, and in the spatial position, the outer ring channel 41 corresponds to the temperature-measuring vibration ring 11, and the inner ring channel 42 corresponds to the frequency-transmitting vibration ring 21.
In the present embodiment, the back electrode interface 5 includes a plurality of ac driving electrode interfaces 51, ac sensing electrode interfaces 52, dc bias electrode interfaces 53, and a ground electrode interface 54.
Wherein, one end of the outer ring channel 41 is electrically connected with the ac driving electrode interface 51 and/or the ac sensing electrode interface 52 through a flat cable, and one end of the inner circular channel 42 is electrically connected with the ac driving electrode interface 51 and/or the ac sensing electrode interface 52 through a flat cable.
As an example, when the number of the thermometric vibrating rings 11 of the thermometric resonance unit 1 is 2, one thermometric vibrating ring 11 thereof is driven by the portion of the outer ring channel 41 falling into the thermometric vibrating ring 11, and thereby the outer ring channel 41 is connected to the ac driving electrode interface 51; while the other thermometric vibrating ring 11 may be sensed by the portion of the outer ring channel 41 falling within the thermometric vibrating ring 11 and thereby the outer ring channel 41 is connected to the ac induction electrode interface 52 for exerting the thermometric function of the thermometric resonance unit 1.
That is, when the outer ring channel 41 is used to drive the thermometric vibrating ring 11 to resonate, the outer ring channel 41 is electrically connected to the ac drive electrode interface 51 via the flat cable, and/or when the outer ring channel 41 is used to sense the thermometric vibrating ring 11, the outer ring channel 41 is electrically connected to the ac sense electrode interface 52 via the flat cable.
Further, when the number of the frequency transmission vibrating rings 21 of the frequency transmission resonant unit 2 is 2, the functional electrode 211 of one frequency transmission vibrating ring 21 is a driving electrode and is connected to the ac driving electrode interface 51 through the internal circular channel 42, while the functional electrode 211 of the other frequency transmission vibrating ring 21 is an inductive electrode and is connected to the ac inductive electrode interface 52 through the internal circular channel 42, so as to play the frequency output function of the frequency transmission resonant unit 2.
That is, when the inner circular channel 42 is used to drive the frequency transmission vibrating ring 21 to resonate, one end of the inner circular channel 42 is connected to the functional electrode 211 functioning as a driving electrode, and the other end of the inner circular channel 42 is electrically connected to the ac driving electrode interface 51 via a flat cable, and/or when the inner circular channel 42 is used to sense the frequency transmission vibrating ring 21, one end of the inner circular channel 42 is connected to the functional electrode 211 functioning as an induction electrode, and the other end of the inner circular channel 42 is electrically connected to the ac induction electrode interface 52 via a flat cable.
With reference to fig. 5 and 6, the ion doping concentration of the first SOI substrate 3 doped with the intrinsic concentration may be 1e18cm "3, the ion doping concentration of the second SOI substrate 4 doped with the heavy concentration is greater than 1e20 cm" 3, that is, the temperature-measuring resonance unit 1 processed by the first SOI substrate 3 on the basis, the TCF coefficient thereof may reach-25 ppm/K within the full temperature range of-40 to 125 ℃, that is, the temperature-measuring sensitivity of the temperature-measuring resonance unit 1 is improved, the TCF coefficient thereof is less than 1 ppm/K within the full temperature range of-40 to 125 ℃, that is, the temperature-measuring stability of the frequency-transmitting resonance unit 2 is improved.
It will be appreciated that the TCF coefficient, i.e. the (Temperature Coefficient of Frequency) coefficient, is a linear fit coefficient of the frequency variation over the range of the resonator temperature, and is typically expressed in ppm/K (parts per million/kelvin) or Hz/°c (hertz/celsius), a larger TCF coefficient means a larger variation of the resonator frequency per unit temperature variation, indicating that the resonator is more sensitive to temperature variations, thereby correlating the temperature measurement sensitivity of the temperature-measuring resonance unit 1, whereas a smaller TCF coefficient means a smaller variation of the resonator frequency per unit temperature variation, contributing to the temperature measurement stability of the resonator, thereby correlating the temperature measurement stability of the frequency-transmitting resonance unit 2.
Referring to fig. 7, a thermal temperature difference distribution diagram of the MEMS resonator is shown, based on a vertical spacing distance of 2um to 3um in a very small range maintained by the temperature measuring resonance unit 1 and the frequency transmission resonance unit 2 in this embodiment, a thermal coupling effect of the MEMS resonator is improved, and the upper chip 10 and the lower chip 20 are communicated through the silicon channel 40, so that a heat transfer effect is enhanced, and in particular, a structural design of the outer ring channel 41 and the inner circular channel 42 can be also shown, wherein, as shown in the drawing, when an environmental temperature difference is 1 ℃, the thermal temperature difference distribution of two resonance units of the MEMS resonator is reduced to 0.1K, that is, thermal coupling between the temperature measuring resonance unit 1 and the frequency transmission resonance unit 2 is greatly improved, and temperature measuring accuracy of the MEMS resonator is further optimized.
In some embodiments, the silicon channel 40 includes an anchor bias channel 43, the anchor bias channel 43 communicating the thermometric anchor 12 and the frequency delivery anchor 22 so as to adjust the vibrational frequency and vibrational mode of the thermometric resonant unit 1 and the frequency delivery resonant unit 2 through the anchor bias channel 43.
Optionally, the anchor bias channel 43 is electrically connected with the dc bias electrode interface 53 through a flat cable, so as to be connected with an external functional circuit through the dc bias electrode interface 53, and adjust the vibration frequency and the vibration mode of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
In some embodiments, the silicon vias 40 further include a ground via 44, and the bonding layer 30 includes a bonding ring 31 disposed around between the upper die 10 and the lower die 20, the ground via 44 communicating with the bonding ring 31, thereby providing a ground shield between the upper die 10 and the lower die 20.
Optionally, the grounding channel 44 is electrically connected to the grounding electrode interface 54 through the bonding ring 31, so as to realize grounding shielding between the upper chip 10 and the lower chip 20, and enhance the electromagnetic interference resistance of the overall structure of the MEMS resonator.
It should be noted that the resonator may be manufactured from a known material using a known technique, for example, the resonator may be manufactured from a known semiconductor material, and specifically may include:
(1) Composed of one or more materials of column IV of the periodic table, such as silicon, germanium, carbon, silicon germanium, or silicon carbide, etc.; (2) III-V compounds such as gallium phosphide, aluminum gallium phosphide, and the like; (3) Combinations of materials III, IV, V or VI, such as silicon nitride, silicon oxide, aluminum carbide, aluminum nitride and/or aluminum oxide, and the like; (4) Metal silicides, germanides, and carbides, such as nickel silicide, cobalt silicide, tungsten carbide, or platinum germanium silicide, etc.; (5) Doping variants, such as phosphorus, arsenic, antimony, boron or aluminum doped silicon, germanium, carbon or combinations (e.g., silicon germanium, silicon carbide, etc.); (6) The resonator may also be formed in or on an insulator, which may be specifically a Semiconductor (SOI) substrate, using well known photolithography, etching, deposition and/or doping techniques, with various crystalline structures including any one or any combination of single crystal, polycrystalline, nanocrystalline and amorphous, such as regions having single crystal and polycrystalline structures, whether doped or undoped.
In summary, the present embodiment discloses a MEMS resonator, the upper chip 10 and the lower chip 20 are vertically buckled into a whole through the bonding connection of the bonding layer 30, the temperature-measuring resonance unit 1 disposed in the upper chip 10 and the frequency-transmitting resonance unit 2 disposed in the lower chip 20 are disposed face to face, the silicon channel 40 includes an outer ring channel 41 and an inner circular channel 42 disposed in the outer ring channel 41, the inner circular channel 42 is connected with the frequency-transmitting resonance unit 2 through the bonding layer 30, so as to optimize the interval of the resonance units in the chip, and based on the structural design of the outer ring channel 41 and the inner circular channel 42, the thermal coupling effect of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 is improved, and the temperature-measuring sensitivity and the temperature-measuring stability of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 are improved.
Referring to fig. 8, the present embodiment also discloses a method for preparing a MEMS resonator, which can be applied to the MEMS resonator shown in fig. 1 to 4, and the method for preparing the MEMS resonator includes:
s101, providing an upper chip 10, and forming a temperature-measuring resonance unit 1 in the upper chip 10.
S102, providing a lower chip 20, and forming a frequency transmission resonance unit 2 in the lower chip 20.
S103, vertically buckling and packaging the upper chip 10 and the lower chip 20 into a whole through the bonding layer 30, and arranging the temperature measuring resonance unit 1 and the frequency transmission resonance unit 2 face to face.
S104, a silicon channel 40 for driving and sensing the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 is formed on the upper chip 10.
Namely, the bonding layer 30 vertically integrates the interval distance between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2, so as to improve the thermal coupling effect between the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
In an implementation, referring to fig. 9a, the formation of the silicon channel 40 may specifically include:
an initial channel 401 is etched in the bottom surface of the first SOI substrate 3 of the upper chip 10.
The first SOI substrate 3 is a composite structure design of an SOI substrate, the SOI of which is Silicon on Insulator substrate, that is, an insulating layer of SiO2 material is added in the first SOI substrate 3 to avoid the problems of bottom leakage current and backscattering of the substrate, and also has the functions of electrical isolation, reverse leakage prevention and the like, thereby reducing crosstalk between devices and improving the reliability and stability of the devices.
It should be noted that the initial channel 401 may be a groove or a through hole, and the initial channel 401 corresponds to the driving electrode, the sensing electrode, and the anchor point in the upper chip 10.
Further, referring to fig. 9b, an insulating dielectric layer 402 is deposited on the sidewall of the initial channel 401, and in-situ doped polysilicon is filled into the initial channel 401 based on the insulating dielectric layer 402 to obtain an intermediate channel 403.
The insulating dielectric layer 402 in this embodiment may be a silicon dioxide or silicon nitride layer, so as to play a role in protection, that is, ensuring electrical isolation of the channel by its insulating property, and avoiding problems such as signal interference and current channeling.
In some embodiments, after filling the in-situ doped polysilicon into the initial channel 401, the first SOI substrate 3 may also be planarized by Chemical Mechanical Polishing (CMP).
Further, referring to fig. 9c and 9d, on the first SOI substrate 3 and corresponding to the intermediate channel 403, a matching channel 404 for communicating with the intermediate channel 403 is lithographically etched, and in-situ doped polysilicon is filled in the matching channel 404 to obtain a silicon channel 40, the silicon channel 40 comprising an outer ring channel 41 for driving and sensing the temperature-sensing resonant unit 1 and an inner circular channel 42 provided in the outer ring channel 41 for driving and sensing the frequency-transmitting resonant unit 2.
The inner circular channel 42 is located inside the outer circular channel 41 and isolated from each other, and the outer circular channel 41 may be in a circular structure design in terms of a three-dimensional structure, so as to match the temperature-measuring resonance unit 1 and the temperature-measuring vibration ring 11 thereof processed on the first SOI substrate 3 in the subsequent process, so that the portion of the outer circular channel 41 extending into the temperature-measuring vibration ring 11 may be used as a driving electrode and an induction electrode of the temperature-measuring vibration ring 11.
In some embodiments, after filling the in-situ doped polysilicon into the matching channel 404, the first SOI substrate 3 may also be planarized by Chemical Mechanical Polishing (CMP).
It should be noted that the matching channel 404 is structurally matched to the intermediate channel 403 so as to obtain the silicon channel 40.
In some embodiments, in conjunction with fig. 9d, the forming method of the bonding layer 30 may specifically include:
a bonding pattern is lithographically etched on the first SOI substrate 3, and a bonding layer 30 is deposited on the bonding pattern, wherein the bonding layer 30 may be wound between the upper chip 10 and the lower chip 20 to form a bonding ring 31, and the bonding layer 30 at the end of the inner circular channel 42 may enable the inner circular channel 42 to be electrically connected with the functional electrode 211 of the frequency transmission vibrating ring 21 of the frequency transmission resonance unit 2 in the lower chip 20 in a subsequent process through the bonding layer 30.
Further, the bonding layer 30 may be formed by depositing polysilicon or metal.
In which the upper chip 10 having the temperature measuring resonance unit 1 and the lower chip 20 having the frequency transmitting resonance unit 2 may be gold-silicon bonded or silicon-silicon bonded through the bonding layer 30.
It should be noted that, the forming method of the temperature-measuring resonance unit 1 of the present embodiment may specifically include:
photoetching and etching a resonant structure 101 on the first SOI substrate 3;
and removing the SiO2 insulating layer structure 102 in the active space of the interference resonance structure 101 to obtain the temperature-measuring resonance unit 1.
As an example, the SiO2 insulating layer structure 102 may be removed by HF (hydrofluoric acid) gas, that is, hydrofluoric acid and SiO2 using a wet etching process chemically react to remove the target structure, and because hydrofluoric acid has a high selectivity to SiO2, silicon dioxide may be effectively removed without damaging other materials, making it an ideal choice for removing the insulating layer structure so as to obtain the temperature-measuring resonance unit 1.
Referring to fig. 9e and 9f, room is provided for resonance of the thermometric resonance unit 1 by removing the SiO2 insulating layer structure 102.
Further, the thermometric resonance unit 1 includes a thermometric vibration ring 11, and the external ring channel 41 penetrates through the thermometric vibration ring 11, and uses a portion extending into the thermometric vibration ring 11 as a driving electrode and an induction electrode of the thermometric vibration ring 11.
It should be noted that the lower chip 20 and the frequency-transmitting resonance unit 2 thereof are also manufactured by the processing technology of the temperature-measuring resonance unit 1 of the upper chip 10, which is not described herein.
The frequency transmission resonance unit 2 includes a frequency transmission vibration ring 21, and a functional electrode 211 is disposed in the frequency transmission vibration ring 21, that is, an inner circular channel 42 is electrically connected with the functional electrode 211 through a bonding layer 30 in a bonding manner, and is used for driving and sensing the frequency transmission resonance unit 2.
Referring to fig. 9g, after the upper chip 10 and the lower chip 20 are connected through the bonding layer 30, the temperature measuring resonance unit 1 and the frequency transmission resonance unit 2 keep a vertical spacing distance within a very small range of 2um to 3um, so as to optimize the thermal coupling effect of the resonator and further improve the temperature measuring accuracy of the resonator.
In the implementation, referring to fig. 9h and 9i, after vertically fastening and packaging the upper chip 10 and the lower chip 20 into a whole by the bonding layer 30, it further includes:
a first wiring layer 6 for connecting the outer ring channel 41 is formed on the bottom surface of the first SOI substrate 3, and a silicon oxide insulating layer 7 is deposited on the first wiring layer 6.
Further, a second flat cable layer 8 for connecting the inner circular channels 42 is formed on the silicon oxide insulating layer 7.
The first flat cable layer 6 and the second flat cable layer 8 are layered and isolated by the silicon oxide insulating layer 7, and the external ring channel 41 and the internal circular channel 42 of the silicon channel 40 can be connected with an external circuit through the first flat cable layer 6 and the second flat cable layer 8 so as to drive and sense the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2.
Referring to fig. 9j, a protective layer 9 is deposited on the bottom surface of the first SOI substrate 3 and etched to expose the back electrode interface 5.
Optionally, the protective layer 9 includes a polyimide material, and the protective layer 9 having the polyimide material has good mechanical and chemical properties, high temperature stability, low dielectric constant, and other characteristics, so that the surface of the chip can be effectively prevented from being scratched or worn, the surface of the chip can be prevented from being corroded by chemical substances, the capacitance between the chip and other circuits can be reduced, signal crosstalk and electromagnetic interference can be reduced, and more reliable high temperature protection can be provided for the chip.
It should be noted that the back electrode interface 5 may include several ac driving electrode interfaces 51, ac sensing electrode interfaces 52, dc bias electrode interfaces 53, and a ground electrode interface 54 for electrical connection with an external circuit.
That is, in the MEMS resonator formed by the above-mentioned MEMS resonator manufacturing method, the upper chip 10 and the lower chip 20 are vertically buckled into a whole through the bonding connection of the bonding layer 30, the temperature-measuring resonance unit 1 provided in the upper chip 10 and the frequency-transmitting resonance unit 2 provided in the lower chip 20 are arranged face to face, the silicon channel 40 includes an outer ring channel 41 and an inner circular channel 42 provided in the outer ring channel 41, and the inner circular channel 42 passes through the upper chip 10 and is connected with the frequency-transmitting resonance unit 2 through the bonding layer 30, so that the interval and the heat transfer structure of the resonance units in the chip are optimized, the thermal coupling effect of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 is improved, and the temperature-measuring sensitivity and the temperature-measuring stability of the temperature-measuring resonance unit 1 and the frequency-transmitting resonance unit 2 are improved.
The foregoing has outlined rather broadly the more detailed description of the application in order that the detailed description of the principles and embodiments of the application may be implemented in conjunction with the detailed description of the embodiments that follow; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (12)
1. A MEMS resonator, comprising:
an upper chip provided with a temperature measuring resonance unit, a lower chip provided with a frequency transmission resonance unit and a bonding layer arranged between the upper chip and the lower chip; the upper chip and the lower chip are vertically buckled and packaged into a whole through the bonding layer, and the temperature measuring resonance unit and the frequency transmission resonance unit are arranged face to face;
the upper chip is provided with a silicon channel, the silicon channel comprises an outer ring channel used for driving and sensing the temperature measuring resonance unit and an inner circular channel which is arranged in the outer ring channel and used for driving and sensing the frequency transmission resonance unit, and the inner circular channel penetrates through the upper chip and is connected with the frequency transmission resonance unit through the bonding layer.
2. The MEMS resonator of claim 1, wherein the upper die comprises a first SOI substrate doped with an intrinsic concentration, the thermometric resonating unit is located on the first SOI substrate and comprises at least two thermometric vibrating rings, a thermometric anchor point, and a thermometric coupling beam; the temperature measuring vibration ring is overlapped with the axis of the external ring channel; the two temperature measuring vibrating rings are connected through the temperature measuring coupling beam, and the temperature measuring coupling beam is fixed on the first SOI substrate through the temperature measuring anchor point.
3. The MEMS resonator of claim 2 wherein the portion of the outer ring channel that extends to the thermometric vibrating ring acts as a drive electrode and sense electrode for the thermometric vibrating ring.
4. The MEMS resonator of claim 2, wherein the lower die comprises a heavily doped second SOI substrate, the frequency transmission resonant unit is located on the second SOI substrate and comprises at least two frequency transmission vibrating rings, a frequency transmission anchor point, and a frequency transmission coupling beam, the frequency transmission vibrating rings coincide with the axis of the internal circular channel; the two frequency transmission vibrating rings are connected through the frequency transmission coupling beam, and the frequency transmission coupling beam is fixed on the second SOI substrate through the frequency transmission anchor point.
5. The MEMS resonator of claim 4 wherein a functional electrode is disposed within the frequency-transmitting vibrating ring, the internal circular channel being in bonded electrical connection with the functional electrode via the bonding layer for driving and sensing the frequency-transmitting resonating unit.
6. The MEMS resonator of claim 4 wherein the silicon channel comprises an anchor bias channel that communicates the temperature measurement anchor and the frequency delivery anchor.
7. The MEMS resonator of claim 2, wherein the silicon channel further comprises a ground channel, the bonding layer comprising a bonding ring wound between the upper die and the lower die, the ground channel communicating with the bonding ring.
8. MEMS resonator according to any of claims 1 to 7, wherein the thermometric resonance unit is structurally identical to the frequency-transmitting resonance unit and/or has the same frequency.
9. A method of manufacturing a MEMS resonator as claimed in any one of claims 1 to 8, comprising:
providing an upper chip, and forming a temperature measuring resonance unit in the upper chip;
providing a lower chip, and forming a frequency transmission resonance unit in the lower chip;
the upper chip and the lower chip are vertically buckled and packaged into a whole through a bonding layer, and the temperature measuring resonance unit and the frequency transmission resonance unit are arranged face to face;
and a silicon channel for driving and sensing the temperature-measuring resonance unit and the frequency-transmitting resonance unit is formed on the upper chip, the silicon channel comprises an outer ring channel for driving and sensing the temperature-measuring resonance unit and an inner circular channel which is arranged in the outer ring channel and used for driving and sensing the frequency-transmitting resonance unit, and the inner circular channel passes through the upper chip and is connected with the frequency-transmitting resonance unit through the bonding layer.
10. The method of manufacturing a MEMS resonator according to claim 9, wherein the method of forming the silicon channel comprises:
etching an initial channel on the bottom surface of the first SOI substrate of the upper chip;
depositing an insulating medium layer on the side wall of the initial channel, and filling in-situ doped polysilicon into the initial channel based on the insulating medium layer to obtain an intermediate channel;
photoetching and etching a matching channel which is used for communicating the middle channel on the first SOI substrate and at a position corresponding to the middle channel;
and filling the in-situ doped polycrystalline silicon in the matching channel to obtain a silicon channel.
11. The method for manufacturing a MEMS resonator according to claim 10, wherein the method for forming the thermometric resonance unit comprises:
photoetching and etching a resonant structure on the first SOI substrate;
and removing the SiO2 insulating layer structure in the active space of the resonance structure to obtain the temperature-measuring resonance unit.
12. The method of manufacturing a MEMS resonator according to claim 10, wherein after the vertically fastening and packaging the upper chip and the lower chip as a unit by a bonding layer, further comprising:
forming a first bus line layer for connecting the external ring channel on the bottom surface of the first SOI substrate, and depositing a silicon oxide insulating layer on the first bus line layer;
forming a second flat cable layer on the silicon oxide insulating layer for connecting the internal circular channel;
and depositing a protective layer on the bottom surface of the first SOI substrate, and etching to expose the back electrode interface.
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