CN106788316A - Pressure resistance type Oven Controlled Oscillator and preparation method thereof - Google Patents
Pressure resistance type Oven Controlled Oscillator and preparation method thereof Download PDFInfo
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- CN106788316A CN106788316A CN201510830774.1A CN201510830774A CN106788316A CN 106788316 A CN106788316 A CN 106788316A CN 201510830774 A CN201510830774 A CN 201510830774A CN 106788316 A CN106788316 A CN 106788316A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 91
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 claims abstract description 72
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 238000002955 isolation Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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Abstract
The present invention provides a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof, including：Resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating barrier and adding thermal resistance；Resonance structure includes extensional vibration beam and first electrode；The quantity of extensional vibration beam is two, two extensional vibration Liangping between-line spacing arrangements；First electrode is located at two two ends of extensional vibration beam, and two extensional vibration beams are connected；Extensional vibration beam and first electrode are along monocrystalline silicon<100>Crystal orientation race directional spreding；Heating beam runs through two extensional vibration beams；Polysilicon high-ohmic layer is located between two extensional vibration beams, and is two parts by heating beam cut-off；First insulating barrier and adding thermal resistance are covered in the upper surface of heating beam successively from the bottom to top.Polysilicon high-ohmic layer is made between two extensional vibration beams, is capable of achieving to carry out piezoresistive detection to oscillator；The heating beam for being located at its both sides is connected into two-end fixed beam by polysilicon high-ohmic layer, is significantly reduced influence of the heating beam deformation to resonance structure.
Description
Technical field
The present invention relates to sensor field, more particularly to a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof.
Background technology
Oscillator is to provide the basic electronic component of clock frequency, is both needed to use in nearly all digital circuitry.It is logical in the modern times
In news system, oscillator provides frequency reference and synchronizing signal for system.Because frequency resource is limited and user is numerous, to vibration
The stability of device has high requirement.The full warm area frequency stability of GSM mobile handset requirement oscillator is moved within ± 2.5ppm
Base station requires the stability of oscillator within ± 0.05ppm.
For a long time, quartz-crystal resonator is always the main element of offer clock frequency signal in electronic system, and its performance is steady
It is fixed, good temp characteristic.But, quartz (controlled) oscillator be difficult to it is integrated, limited by mechanical processing toolses be difficult to make high-frequency generator,
And anti-seismic performance is poor, it is difficult to meet the demand of following intelligent movable equipment.
It is easy to integrated with integrated circuit using the silicon substrate oscillator of micro-electromechanical technology (MEMS) fabrication techniques is humorous, shake excellent,
The frequency of oscillation output of GHz magnitudes, and tolerable HI high impact environment are capable of achieving, are oscillator of new generation.
One subject matter of silicon substrate oscillator is that the temperature coefficient of monocrystalline silicon young modulus is up to -56ppm/ DEG C, the frequency for causing
Rate temperature coefficient is up to -30ppm/ DEG C.As a comparison, uncompensated AC-cut quartz resonances structure frequency in the range of -40~85 DEG C
Rate temperature coefficient is in 26ppm or so.It is more than the full warm area frequency-temperature coefficient of silicon two orders of magnitude bigger than quartz.Up to
- 30ppm/ DEG C of frequency-temperature coefficient has been significantly greatly increased the difficulty of temperature-compensating.
It is expected to realize the MEMS oscillator of high-temperature stability using thermostatic control technology.Using MEMS resonant structure thermal capacitance
The characteristics of measuring low, it is only necessary to which the power consumption of mW magnitudes can be capable of achieving the temperature-compensating of low-power consumption by resonance structure constant temperature at 90 DEG C.
But, because silicon frequency-temperature coefficient is up to -30ppm/ DEG C, in order to realize the temperature stability (3E grades of clock) of 1ppm, it is necessary to
Ensure full warm area interior resonance structure steady temperature fluctuation less than 0.033 DEG C, it realizes that difficulty is higher.
Experiment shows, edge<100>There is zero crossing, frequency-temperature coefficient in the frequency-temperature coefficient of the N-type heavy doping structure of crystal orientation
The temperature of zero crossing is determined by doping concentration.Our experiment is also indicated that, by adjusting n-type doping concentration, can be made<100>
Crystal orientation temperature coefficient of resonance frequency zero crossing is slightly above the upper limit of oscillator operation warm area.
High performance Oven Controlled Oscillator be difficult to be using piezoresistive detection such oscillator structure common problem, reason is height
There is contradiction with requirement of the piezoresistive detection to structure in performance thermostatic control：One side high-performance Oven Controlled Oscillator requirement core is humorous
The temperature uniformity of structure of shaking, adding thermal resistance must be using the single-beam form through core resonance structure, the inspection of another aspect pressure drag
Survey requires that electric current big region of stress from core resonance structure is flowed through.In order to take into account adiabatic and shock proof demand, core resonance
The size of structure and heating beam is small, it is difficult to while meeting the demand of high-performance thermostatic control and piezoresistive detection.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of pressure resistance type Oven Controlled Oscillator and its
Preparation method, for solving to cause because silicon substrate oscillator has up to -30ppm/ DEG C of frequency-temperature coefficient in the prior art
Frequency the relatively difficult problem of temperature-compensating, and high performance Oven Controlled Oscillator is difficult to using the problem of piezoresistive detection.
In order to achieve the above objects and other related objects, the present invention provides a kind of pressure resistance type Oven Controlled Oscillator, the pressure resistance type
Oven Controlled Oscillator includes：Resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating barrier and adding thermal resistance；
The resonance structure includes extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, and described two are indulged
Arranged to walking beam parallel interval；The first electrode is located at the two ends of two extensional vibration beams, and by two longitudinal directions
Walking beam is connected；The extensional vibration beam and the first electrode are along monocrystalline silicon<100>Crystal orientation race directional spreding；
The heating beam runs through two extensional vibration beams；
The polysilicon high-ohmic layer is located between two extensional vibration beams, and is two parts by the heating beam cut-off；
First insulating barrier and the adding thermal resistance are covered in the upper surface of the heating beam successively from the bottom to top.
As a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the midpoint of the heating beam and the resonance knot
The midpoint of structure coincides.
Used as a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type Oven Controlled Oscillator is also wrapped
Include anchor point, temperature sensor and second electrode；
The anchor point is located at the both sides of the resonance structure, and the two ends of the heating beam are connected with the anchor point respectively, described
The two ends of the first insulating barrier and the adding thermal resistance are respectively positioned on the upper surface of the anchor point；
The temperature sensor is located at the upper surface of the anchor point；
The second electrode is located at the surface at the adding thermal resistance two ends.
As a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the resonance structure, the heating Liang Jisuo
The material for stating anchor point is N-type heavy doping monocrystalline silicon, and the resonance structure, the heating beam and the integrated knot of the anchor point
Structure；The material of the polysilicon high-ohmic layer is the low stress polysilicon of undoped p.
As a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, N-type weight in the N-type heavy doping monocrystalline silicon
The concentration of doping is more than 1019/cm3。
Used as a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type Oven Controlled Oscillator is also wrapped
The 3rd electrode is included, the 3rd electrode is located at the upper surface of the anchor point, and the resonance structure realizes electricity by the 3rd electrode
Learn and draw.
Used as a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the temperature sensor includes temperature sensitive electrical
Resistance, the 4th electrode and the second insulating barrier；The temperature-sensitive resistor is connected by second insulating barrier with the anchor point, and logical
Cross the 4th electrode and realize that electricity is drawn.
Used as a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the temperature sensor includes temp.-sensitive diodes.
Used as a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type Oven Controlled Oscillator is also wrapped
Substrate and the 3rd insulating barrier are included, the 3rd insulating barrier is located at the lower surface of the anchor point, and the anchor point is by the described 3rd insulation
Layer is fixed on the surface of the substrate；The surface of the substrate has one with the lower surface of the resonance structure and the heating beam
Fixed spacing.
As a kind of preferred scheme of pressure resistance type Oven Controlled Oscillator of the invention, the pressure resistance type Oven Controlled Oscillator encapsulation
In vacuum environment.
The present invention also provides a kind of preparation method of pressure resistance type Oven Controlled Oscillator, and the preparation method includes：
1) soi wafer is provided, the soi wafer includes silicon substrate, oxygen buried layer and top layer silicon successively from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed and is run through first dielectric isolation layer and the top layer silicon
Deep trouth；
4) formation low stress polysilicon layer, the low stress polysilicon layer in layer surface and the deep trouth are dielectrically separated from described first
Described first is covered to be dielectrically separated from layer surface and fill up the deep trouth；
5) the low stress polysilicon layer and first dielectric isolation layer of the deep trouth periphery are removed successively；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and TEMP
Device figure, etching remove second dielectric isolation layer outside the adding thermal resistance figure and the temperature sensor graphics field and
The resistive layer, to form temperature-sensitive resistor, adding thermal resistance, positioned at the temperature-sensitive resistor and adding thermal resistance lower section
Insulating barrier；
7) at the two ends of the temperature-sensitive resistor, the two ends of the adding thermal resistance and the top layer silicon table of anchor point is subsequently formed
Face forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching, form anchor point, heating beam and resonance structure, the resonance structure bag
Include two extensional vibration beams and positioned at the extensional vibration beam two ends and with the extensional vibration beam first electrode connected vertically；
9) oxygen buried layer outside the anchor point corresponding region is removed.
As a kind of preferred scheme of the preparation method of pressure resistance type Oven Controlled Oscillator of the invention, step 4) in, the depth
Twice of the width of groove less than or equal to the low stress polysilicon layer thicknesses；The length of the deep trouth is more than step 8) middle formation
The heating beam width and twice lithography alignment deviation sum.
As described above, pressure resistance type Oven Controlled Oscillator of the invention and preparation method thereof, has the advantages that：Edge<100>
There is zero crossing in the frequency-temperature coefficient of the N-type heavy doping structure of crystal orientation race, the temperature of frequency-temperature coefficient zero crossing is dense by adulterating
Degree is determined；By adjusting n-type doping concentration, can make<100>Crystal orientation race temperature coefficient of resonance frequency zero crossing is slightly above vibration
The upper limit of device operation temperature area；Heating beam through resonance structure is set, and galvanization is to be capable of achieving thermostatic control on the heating beam,
So that the pressure resistance type Oven Controlled Oscillator has preferable stability and preferable temperature characterisitic；Shaken in two longitudinal directions
The polysilicon high-ohmic layer is made between dynamic beam, it is possible to achieve piezoresistive detection is carried out to the oscillator；Meanwhile, the polysilicon
The heating beam for being located at its both sides is connected into complete symmetrical two-end fixed beam by resistive formation, can provide good to the resonance structure
Good support, is significantly reduced influence of the heating beam deformation to the resonance structure.
Brief description of the drawings
Fig. 1 is shown as the dimensional structure diagram of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention one.
Fig. 2 is shown as the decomposition texture schematic diagram of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention one.
The pressure resistance type Oven Controlled Oscillator that Fig. 3 is shown as providing in the embodiment of the present invention one carries out current direction during piezoresistive detection
Schematic diagram.
Fig. 4 shows the equivalent circuit diagram of Fig. 3.
Fig. 5 is shown as the schematic flow sheet of the preparation method of the pressure resistance type Oven Controlled Oscillator provided in the embodiment of the present invention two.
Fig. 6 to Figure 15 is the preparation method of the pressure resistance type Oven Controlled Oscillator of offer in the embodiment of the present invention two in each step
Structural representation.
Component label instructions
10 resonance structures
101 extensional vibration beams
102 first electrodes
111 heating beams
112 first insulating barriers
113 adding thermal resistances
114 polysilicon high-ohmics layer
12 anchor points
13 temperature sensors
131 temperature-sensitive resistors
132 the 4th electrodes
133 the 3rd insulating barriers
14 second electrodes
15 the 3rd electrodes
16 substrates
17 second insulating barriers
20 soi wafers
201 silicon substrates
202 oxygen buried layers
203 top layer silicons
21 first dielectric isolation layers
22 deep trouths
23 low stress polysilicon layers
S1~S9 steps
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand other advantages of the invention and effect easily.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, without departing from essence of the invention
Various modifications or alterations are carried out under god.
Fig. 1 to Figure 15 is referred to it should be noted that the diagram provided in the present embodiment only illustrates of the invention in a schematic way
Basic conception, though component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in diagram and
Size is drawn, and it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment one
Fig. 1 to Fig. 2 is referred to, the present invention provides a kind of pressure resistance type Oven Controlled Oscillator, the pressure resistance type thermostatic control vibration
Device includes：Resonance structure 10, heating beam 111, polysilicon high-ohmic the 114, first insulating barrier 112 of layer and adding thermal resistance 113；Institute
Stating resonance structure 10 includes extensional vibration beam 101 and first electrode 102；The quantity of the extensional vibration beam 101 is two, institute
State two parallel interval of extensional vibration beam 101 arrangements；The first electrode 102 is located at the two of two extensional vibration beams 101
End, and two extensional vibration beams 101 are connected；The extensional vibration beam 101 and the first electrode 102 are along list
Crystal silicon<100>Crystal orientation race directional spreding；The heating beam 111 runs through two extensional vibration beams 101；The polysilicon high-ohmic
Layer 114 is located between two extensional vibration beams 101, and it is two parts that the heating beam 111 is separated；Described first is exhausted
Edge layer 112 and the adding thermal resistance 113 are covered in the upper surface of the heating beam 111 successively from the bottom to top.
As an example, the extensional vibration beam 101 and the first electrode 102 are along monocrystalline silicon<100>Crystal orientation race directional spreding tool
Body can be：The resonance structure 10 can use (100) silicon wafer to manufacture, and the extensional vibration beam 101 can be brilliant along (001)
[100] crystal orientation on face, and the first electrode 102 can along (100) crystal face [010] crystal orientation.Edge<100>The N of crystal orientation race
There is zero crossing in the frequency-temperature coefficient of type heavy doping structure, the temperature of frequency-temperature coefficient zero crossing is determined by doping concentration；It is logical
Adjustment n-type doping concentration is crossed, can be made<100>Crystal orientation temperature coefficient of resonance frequency zero crossing is slightly above oscillator operation warm area
The upper limit.
As an example, polysilicon high-ohmic layer 114 is located between two extensional vibration beams 101, and by the heating beam
111 cut-offs are specially for two parts：The polysilicon high-ohmic layer 114 is described between two extensional vibration beams 101
In heating beam 111, and the thickness of polysilicon high-ohmic layer 114 is equal to the thickness for heating beam 111, and the polysilicon is high
The length of resistance layer 114 is equal to the width of the heating beam 111, to ensure that the energy of polysilicon high-ohmic layer 114 will be positioned at its both sides
The heating beam 111 it is completely isolated.The polysilicon high-ohmic layer 114 may be located between two extensional vibration beams 101
The heating beam 111 any position, it is preferable that in the present embodiment, polysilicon high-ohmic layer 114 be located at it is described plus
The midpoint of hot beam 111, i.e., midpoint and the midpoint of the heating beam 111 of described polysilicon high-ohmic layer 114 coincide.
As an example, the midpoint of the heating beam 111 coincides with the midpoint of the resonance structure 10, i.e., described heating beam 111
It is example with Fig. 1 to Fig. 2, now with the midpoint that the tie point of the extensional vibration beam 101 is the extensional vibration beam 101
The heating beam 111 is centrally located at the center between the midpoint of two extensional vibration beams 101.The heating beam 111
The point minimum with the longitudinal stretching modal displacement that the tie point of the extensional vibration beam 101 is located at the extensional vibration beam 101, i.e.,
Positioned at the midpoint of the extensional vibration beam 101 so that therefore 111 pairs of work vibration shapes of the resonance structure 10 of the heating beam
Influence is minimum.
As an example, the pressure resistance type Oven Controlled Oscillator also includes anchor point 12, temperature sensor and 13 second electrodes 14；
The anchor point 12 is located at the both sides of the resonance structure 10, and the two ends of the heating beam 111 are connected with the anchor point 12 respectively
Connect, the two ends of first insulating barrier 112 and the adding thermal resistance 113 are respectively positioned on the upper surface of the anchor point 12；The temperature
Sensor 13 is located at the upper surface of the anchor point 12；The second electrode 14 is located at the surface at the two ends of the adding thermal resistance 113.
The applied voltage in the second electrode 14, can heat to the heating beam 111 and the resonance structure 10.The heating electricity
Resistance 113 is used for the thermostatic control of the heating beam 111, heated at constant temperature power P and the midpoint temperature of two extensional vibration beams 101
Degree Tt, anchor point temperature TaBetween meet formula：
P=β (Tt-Ta)
In formula, β is the function for heating beam size and thermal conductivity；When it is homogeneous rectangular cross section beam to heat beam, the β in above formula meets
Formula：
β=8kbh/L
In formula, k is the thermal conductivity of the heating beam 111, b, h and L be respectively the heating width of beam 111, thickness and
Length.In practical structures, β is determined by actual experiment.
As an example, the material of the resonance structure 10, the heating beam 111 and the anchor point 12 is N-type heavy doping list
Crystal silicon, and the resonance structure 10, it is described heating beam 111 and the anchor point 12 be integrated, i.e., described resonance structure
10th, the heating beam 111 and the anchor point 12 can be obtained by etching same single crystal silicon material layer；The polysilicon high-ohmic
The material of layer 114 is the low stress polysilicon of undoped p.
As an example, the resonance structure 10, the heating beam 111 and the concentration of N-type heavy doping can be with the anchor point 12
Set according to actual needs, it is preferable that in the present embodiment, the resonance structure 10, heating beam 111 and the anchor
The concentration of N-type heavy doping should be greater than 10 in point 1219/cm3。
As an example, the pressure resistance type Oven Controlled Oscillator also includes the 3rd electrode 15, the quantity of the 3rd electrode 15 is
Two, respectively in two anchor points 12 of the both sides of the resonance structure 10, the resonance structure 10 passes through the described 3rd
Electrode 15 realizes that electricity is drawn.It should be noted that the structure of the 3rd electrode 15 is not limited in shown in Fig. 1 and Fig. 2,
Can be needed be set according to practical structures, for example, for capacitance detecting formula oscillator, described two 3rd electrodes 15 can be with
Short circuit is used as an electrode.
As an example, the temperature sensor 13 includes temperature-sensitive resistor 131, the 4th electrode 132 and the 3rd insulating barrier 133；
The temperature-sensitive resistor 131 is connected by the 3rd insulating barrier 133 with the anchor point 12, and by the 4th electrode
132 realize that electricity is drawn；The temperature sensor 13 forms resistance bridge by external three resistance (not shown) can be real
Now to the measurement of the temperature of the anchor point 12.
As an example, the quantity of the 4th electrode 132 can be set according to actual needs, it is preferable that in the present embodiment,
The quantity of the 4th electrode 132 is two, and described two 4th electrodes 132 are located on the temperature-sensitive resistor 131；Tool
Body, described two 4th electrodes 132 are located at the two ends of the temperature-sensitive resistor 132.
As an example, the temperature sensor 13 is not limited only to the structure shown in Fig. 1, the temperature sensor 13 can also be used
The various ways such as temp.-sensitive diodes.
As an example, the pressure resistance type Oven Controlled Oscillator also includes the insulating barrier 17 of substrate 16 and second, the anchor point 12 leads to
Second insulating barrier 17 is crossed to be fixed on the surface of the substrate 16；The surface of the substrate 16 and the resonance structure 10
And the lower surface of the heating beam 111 has certain spacing, i.e., described heating beam 111 supports the resonance structure 10,
And cause that the resonance structure 10 is in vacant state relative to the substrate 16.
As an example, the pressure resistance type Oven Controlled Oscillator is packaged in vacuum environment.
Current direction schematic diagram when pressure resistance type Oven Controlled Oscillator carries out piezoresistive detection as shown in figure 3, in figure arrow sensing
The as flow direction of electric current；From the figure 3, it may be seen that after applying power on the 3rd electrode 15, electric current is by the 3rd electrode
15 flow through the heating beam 111, and 3 tunnels are divided into when reaching the extensional vibration beam 101, wherein 2 road electric currents flow separately through it is described
The heating beam 111 is returned to after the resonance structure 10 of heating beam 111 both sides, the two-way electric current is used for piezoresistive detection, another
Road electric current flows through the polysilicon high-ohmic floor 114, and the electric current is parasite current.The equivalent circuit diagram of Fig. 3 as indicated at 4, wherein,
Rs1And Rs2The resistance of the resonance structure 10 of heating beam 111 both sides is respectively located at, when the partial ohmic is to resonance
STRESS VARIATION is sensitive；R in figureTIt is the resistance of polysilicon high-ohmic layer 114, is the dead resistance of piezoresistive detection；R in figurep1
And Rp2It is the anchor point 12 and the dead resistance of the heating beam 111.As previously described, because the resonance structure 10, described
Heating beam 111 and the anchor point 12 are made using N-type heavy doping monocrystalline silicon, and its circuit rate is less than 0.001 Ω cm, and institute
State polysilicon high-ohmic layer 114 to be made using the low stress polysilicon of undoped p, its resistance is more than 10 Ω cm, due to the polycrystalline
The resistivity of silicon resistive formation 114 is more than 10,000 times of the resistivity of the resonance structure 10, it is assumed that in the resonance structure 10
Beam width and thickness and the polysilicon high-ohmic layer 114 width and thickness it is identical, even if the overall length of the resonance structure 10
Spend is 1,000 times of the polysilicon high-ohmic 114 length of layer, RTStill it is Rs1And Rs2More than ten times, the influence to piezoresistive detection
It is negligible.
In the present invention,<100>There is zero crossing, frequency-temperature coefficient in the frequency-temperature coefficient of the N-type heavy doping structure of crystal orientation race
The temperature of zero crossing is determined by doping concentration；By adjusting n-type doping concentration, can make<100>Crystal orientation race resonant frequency temperature
Coefficient zero crossing is slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, in the heating Liang Shangtong
Electric current is to be capable of achieving thermostatic control so that the pressure resistance type Oven Controlled Oscillator has preferable stability and preferable temperature
Characteristic；The polysilicon high-ohmic layer is made between two extensional vibration beams, it is possible to achieve pressure drag is carried out to the oscillator
Detection；Meanwhile, the heating beam for being located at its both sides is connected into complete symmetrical two-end fixed beam by the polysilicon high-ohmic layer,
Good support can be provided to the resonance structure, be significantly reduced influence of the heating beam deformation to the resonance structure.
Embodiment two
Fig. 5 is referred to, the present invention also provides a kind of preparation method of pressure resistance type Oven Controlled Oscillator, and the preparation method includes：
1) soi wafer is provided, the soi wafer includes silicon substrate, oxygen buried layer and top layer silicon successively from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed and is run through first dielectric isolation layer and the top layer silicon
Deep trouth；
4) formation low stress polysilicon layer, the low stress polysilicon layer in layer surface and the deep trouth are dielectrically separated from described first
Described first is covered to be dielectrically separated from layer surface and fill up the deep trouth；
5) the low stress polysilicon layer and first dielectric isolation layer of the deep trouth periphery are removed successively；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and TEMP
Device figure, etching remove second dielectric isolation layer outside the adding thermal resistance figure and the temperature sensor graphics field and
The resistive layer, to form temperature-sensitive resistor, adding thermal resistance, positioned at the temperature-sensitive resistor and adding thermal resistance lower section
Insulating barrier；
7) at the two ends of the temperature-sensitive resistor, the two ends of the adding thermal resistance and the top layer silicon table of anchor point is subsequently formed
Face forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching, form anchor point, heating beam and resonance structure, the resonance structure bag
Include two extensional vibration beams and positioned at the extensional vibration beam two ends and with the extensional vibration beam first electrode connected vertically；
9) oxygen buried layer outside the anchor point corresponding region is removed.
In step 1) in, refer to S1 steps and the Fig. 6 in Fig. 5, there is provided soi wafer 20, the soi wafer 20 by
Under it is supreme successively include silicon substrate 201, oxygen buried layer 202 and top layer silicon 203.
As an example, the soi wafer 20 is without particular/special requirement, can be the conventional SOI used described in existing semiconductor applications
Silicon chip.
In step 2) in, refer to S2 steps and the Fig. 7 in Fig. 5, the surface of the top layer silicon 203 formed first insulation every
Absciss layer 21.
As an example, thermally grown technique, low-pressure chemical vapor deposition process (LPCVD), physical vapour deposition (PVD) work can be used
Skill etc. forms first dielectric isolation layer 21 on the surface of the top layer silicon 203, and the material of first dielectric isolation layer 21 can
Think silica or low stress SiNx.
In step 3) in, S3 steps and the Fig. 8 in Fig. 5 are referred to, etch first dielectric isolation layer 21 and the top layer
Silicon 203, forms the deep trouth 22 through first dielectric isolation layer 21 and the top layer silicon 203.
As an example, defining the figure of the deep trouth 22 using photoetching process, specific method is：In first dielectric isolation layer
21 surfaces coat photoresist layer, form the figure of the deep trouth 22 in the photoresist layer by techniques such as exposure, developments.
As an example, according to the photoresist layer for being formed with the figure of the deep trouth 22, being corresponded to using etching process removal described
First dielectric isolation layer 21 in the region of deep trouth 22, cuts through the top layer silicon 203, with shape using deep reaction ion etching technique
Into the deep trouth 22.
As an example, after forming the deep trouth 22, removing the photoresist layer.
As an example, the width of the deep trouth 22 is less than or equal to subsequent step 4) the middle low stress polysilicon thickness for being formed
The twice of degree；The length of the deep trouth 22 is more than subsequent step 8) in the photoetching pair of width and the twice of the heating beam that is formed
Quasi- deviation sum.
In step 4) in, S4 steps and the Fig. 9 in Fig. 5 are referred to, in the surface of the first dielectric isolation layer 21 and the depth
Low stress polysilicon layer 23 is formed in groove 22, the low stress polysilicon layer 23 covers the surface of the first dielectric isolation layer 21
And fill up the deep trouth 22.
As an example, can use but be not limited only to Low Pressure Chemical Vapor Deposition in the surface of the first dielectric isolation layer 21 and institute
State and low stress polysilicon layer 23 is formed in deep trouth 22, the low stress polysilicon layer 23 is the low stress polysilicon layer of undoped p.
In step 5) in, S5 steps and the Figure 10 to Figure 11 in Fig. 5 are referred to, the low of the periphery of the deep trouth 22 is removed successively
Stress polysilicon layer 23 and first dielectric isolation layer 21.
As an example, removing the surface of the first dielectric isolation layer 21 using reactive ion etching process or CMP process
The low stress polysilicon layer 23, first dielectric isolation layer 21 is removed using etching process.
The low stress polysilicon layer 23 and first dielectric isolation layer 21 of the periphery of the deep trouth 22 are removed afterwards i.e. in the deep trouth
The polysilicon high-ohmic layer 114 as described in embodiment one is formed in 22.Figure 11 is the top view of Figure 10, due to the polysilicon
The size of resistive formation 114 is determined by the size of the deep trouth 22 for being formed before, the width of the polysilicon high-ohmic layer 114
W be less than or equal to step 4) in formed the thickness of low stress polysilicon layer 23 twice, to ensure the low stress polycrystalline
Silicon 23 fills up the deep trouth 22；The length L of the polysilicon high-ohmic layer 114 is more than subsequent step 8) the middle heating for being formed
The width of beam and the lithography alignment deviation sum of twice.In MEMS, the thickness of the low stress polysilicon layer 23 is typically small
In or equal to 2 μm, therefore, the width of the polysilicon high-ohmic layer 114 is generally less than 4 μm；In one example, the photoetching
The deviation of the alignment of technique is 2 μm, and the width for heating beam is 4 μm, then the length L of the polysilicon high-ohmic layer 114 is more than 8 μm.
In step 6) in, S6 steps and the Figure 12 in Fig. 5 are referred to, it is exhausted to sequentially form second on the surface of the top layer silicon 203
Edge separation layer (not shown) and resistive layer (not shown), define adding thermal resistance figure and temperature sensor figure, etching removal institute
Second dielectric isolation layer and the resistive layer outside adding thermal resistance figure and the temperature sensor graphics field are stated, to be formed
Temperature-sensitive resistor (not shown), adding thermal resistance 113, positioned at the temperature-sensitive resistor and the lower section of the adding thermal resistance 113
Insulating barrier.
As an example, forming second dielectric isolation layer on the surface of the top layer silicon 203 using low-pressure chemical vapour deposition technique
And the resistive layer, the material of second dielectric isolation layer can be but be not limited only to low stress SiNx, the resistive layer
Material can be but be not limited only to heavy doping low stress polysilicon.
As an example, the insulating barrier below the temperature-sensitive resistor for being formed is the 3rd insulation described in embodiment one
Layer 133, the insulating barrier positioned at the lower section of the adding thermal resistance 113 is first insulating barrier 112.
It should be noted that because Figure 12 is cross section structure schematic diagram, the sensitive resistance and the 3rd insulating barrier be not in figure
In show, specifically see the related elaboration in embodiment one.
In step 7) in, S7 steps and the Figure 13 in Fig. 5 are referred to, in the two ends of the temperature-sensitive resistor, the heating
The two ends of resistance 113 and subsequently to be formed anchor point the surface of the top layer silicon 203 formed metal electrode.
As an example, can use but be not limited only to sputtering technology in the adding thermal resistance 113 and the exposed top layer silicon 203
Surface forms aluminum metal layer, by photoetching, etching technics in the two ends of the temperature-sensitive resistor, the adding thermal resistance 113
Two ends and subsequently to be formed anchor point the surface of the top layer silicon 203 formed metal electrode.Positioned at the temperature-sensitive resistor two ends
The metal electrode is the 4th electrode 132 described in embodiment one, positioned at the metal at the two ends of the adding thermal resistance 113
Electrode is the second electrode 14 described in embodiment one, positioned at subsequently being formed described in the surface of the top layer silicon 203 of anchor point
Metal electrode is the 3rd electrode 15 described in embodiment one.
It should be noted that because Figure 13 is cross section structure schematic diagram, positioned at the described 4th of the two ends of the temperature-sensitive resistor the
3rd electrode 15 on electrode 132 and the surface of the top layer silicon 203 that subsequently form anchor point is not shown in the figure, specifically
See the related elaboration in embodiment one.
In step 8) in, refer to S8 steps and the Figure 14 in Fig. 5, top layer silicon described in photoetching, deep reaction ion etching, shape
Into anchor point 12, heating beam 111 and resonance structure 10, the resonance structure 10 includes two extensional vibration beams 101 and positioned at institute
State the two ends of extensional vibration beam 101 and with the extensional vibration beam 101 first electrode 102 connected vertically, specifically refer to implementation
Dependency structure description in example one.
As an example, top layer silicon described in photoetching, deep reaction ion etching, anchor is formed, 12, heating beam 111 and resonance structure 10
Specific method known to those skilled in the art, no longer to describe in detail herein.
It should be noted that because Figure 14 is cross section structure schematic diagram, the first electrode is only shown in the resonance structure 10
102。
In step 9) in, S9 steps and the Figure 15 in Fig. 5 are referred to, it is described outside the removal corresponding region of anchor point 12
Oxygen buried layer 202.
As an example, the etching technics removal that can be combined with dry method using wet-etching technology, dry etch process or wet method
The oxygen buried layer 202 outside the corresponding region of anchor point 12, it is preferable that in the present embodiment, it is rotten using hydrofluoric acid vapor
Etching off removes the oxygen buried layer 202, to ultimately form required oscillator structure.
After the step, in the structure of formation, the silicon substrate 201 be embodiment one in substrate 16, reservation positioned at described
The oxygen buried layer 202 of the lower section of anchor point 12 is the second insulating barrier 17 described in embodiment one.The vibration for ultimately forming
Device is the pressure resistance type Oven Controlled Oscillator described in embodiment one, specifically see embodiment one, is not repeated herein.
The preparation method of pressure resistance type Oven Controlled Oscillator of the present invention, it is described after the polysilicon high-ohmic layer is formed
The top layer of soi wafer is still entirely silicon (including top layer silicon and low stress polysilicon), with conventional silicon etching process to monocrystalline silicon
Processing characteristics with polysilicon are approximately the same, carved subsequently through a step and can obtain anchor point, heating beam and resonance structure 10, processing
Precision is higher.
In sum, the present invention provides a kind of pressure resistance type Oven Controlled Oscillator and preparation method thereof, the pressure resistance type thermostatic control
Oscillator includes：Resonance structure, heating beam, polysilicon high-ohmic layer, the first insulating barrier and adding thermal resistance；The resonance structure bag
Include extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, two extensional vibration Liangpings between-line spacing row
Cloth；The first electrode is located at the two ends of two extensional vibration beams, and two extensional vibration beams are connected；It is described
Extensional vibration beam and the first electrode are along monocrystalline silicon<100>Crystal orientation race directional spreding；The heating beam runs through two longitudinal directions
Walking beam；The polysilicon high-ohmic layer is located between two extensional vibration beams, and is two parts by the heating beam cut-off；
First insulating barrier and the adding thermal resistance are covered in the upper surface of the heating beam successively from the bottom to top.Edge<100>Crystal orientation race
There is zero crossing in the frequency-temperature coefficient of N-type heavy doping structure, the temperature of frequency-temperature coefficient zero crossing is determined by doping concentration；
By adjusting n-type doping concentration, can make<100>Crystal orientation race temperature coefficient of resonance frequency zero crossing is slightly above oscillator operation temperature
The upper limit in area；Heating beam through resonance structure is set, and galvanization is to be capable of achieving thermostatic control on the heating beam so that institute
Stating pressure resistance type Oven Controlled Oscillator has preferable stability and preferable temperature characterisitic；Two extensional vibration beams it
Between make polysilicon high-ohmic layer, it is possible to achieve piezoresistive detection is carried out to the oscillator；Meanwhile, the polysilicon high-ohmic layer
The heating beam for being located at its both sides is connected into complete symmetrical two-end fixed beam, good branch can be provided to the resonance structure
Support, is significantly reduced influence of the heating beam deformation to the resonance structure.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art completed under without departing from disclosed spirit and technological thought all etc.
Effect modifications and changes, should be covered by claim of the invention.
Claims (12)
1. a kind of pressure resistance type Oven Controlled Oscillator, it is characterised in that the pressure resistance type Oven Controlled Oscillator includes：Resonance structure,
Heating beam, polysilicon high-ohmic layer, the first insulating barrier and adding thermal resistance；
The resonance structure includes extensional vibration beam and first electrode；The quantity of the extensional vibration beam is two, described two
The between-line spacing arrangement of root extensional vibration Liangping；The first electrode is located at the two ends of two extensional vibration beams, and by described two
Root extensional vibration beam is connected；The extensional vibration beam and the first electrode are along monocrystalline silicon<100>Crystal orientation race directional spreding；
The heating beam runs through two extensional vibration beams；
The polysilicon high-ohmic layer is located between two extensional vibration beams, and is two parts by the heating beam cut-off；
First insulating barrier and the adding thermal resistance are covered in the upper surface of the heating beam successively from the bottom to top.
2. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that：The midpoint of the heating beam is humorous with described
The midpoint of structure of shaking coincides.
3. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that：The pressure resistance type Oven Controlled Oscillator
Also include anchor point, temperature sensor and second electrode；
The anchor point is located at the both sides of the resonance structure, and the two ends of the heating beam are connected with the anchor point respectively,
The two ends of first insulating barrier and the adding thermal resistance are respectively positioned on the upper surface of the anchor point；
The temperature sensor is located at the upper surface of the anchor point；
The second electrode is located at the surface at the adding thermal resistance two ends.
4. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that：The resonance structure, the heating beam
And the material of the anchor point is N-type heavy doping monocrystalline silicon, and the resonance structure, the heating beam and the anchor point are
Integral structure；The material of the polysilicon high-ohmic layer is the low stress polysilicon of undoped p.
5. pressure resistance type Oven Controlled Oscillator according to claim 4, it is characterised in that：N in the N-type heavy doping monocrystalline silicon
The concentration of type heavy doping is more than 1019/cm3。
6. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that：The pressure resistance type Oven Controlled Oscillator
Also include the 3rd electrode, the 3rd electrode is located at the upper surface of the anchor point, and the resonance structure passes through the 3rd electrode
Realize that electricity is drawn.
7. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that：The temperature sensor includes that temperature is quick
Sensing resistor, the 4th electrode and the second insulating barrier；The temperature-sensitive resistor is connected by second insulating barrier with the anchor point,
And realize that electricity is drawn by the 4th electrode.
8. pressure resistance type Oven Controlled Oscillator according to claim 3, it is characterised in that：The temperature sensor includes temperature sensitive two
Pole pipe.
9. the pressure resistance type Oven Controlled Oscillator according to any one of claim 3 to 8, it is characterised in that：The pressure resistance type is permanent
Temperature control oscillator also includes substrate and the 3rd insulating barrier, and the 3rd insulating barrier is located at the lower surface of the anchor point, the anchor
Point is fixed on the surface of the substrate by the 3rd insulating barrier；The surface of the substrate and the resonance structure and described
The lower surface for heating beam has certain spacing.
10. pressure resistance type Oven Controlled Oscillator according to claim 1, it is characterised in that：The pressure resistance type thermostatic control is shaken
Device is swung to be packaged in vacuum environment.
11. a kind of preparation methods of pressure resistance type Oven Controlled Oscillator, it is characterised in that the preparation method includes：
1) soi wafer is provided, the soi wafer includes silicon substrate, oxygen buried layer and top layer silicon successively from the bottom to top；
2) the first dielectric isolation layer is formed in the top layer silicon face；
3) first dielectric isolation layer and the top layer silicon are etched, is formed and is run through first dielectric isolation layer and the top
The deep trouth of layer silicon；
4) described first be dielectrically separated from layer surface and the deep trouth formed undoped p low stress polysilicon layer, it is described not
The low stress polysilicon layer covering described first of doping is dielectrically separated from layer surface and fills up the deep trouth；
5) the low stress polysilicon layer and first dielectric isolation layer of the undoped p of the deep trouth periphery are removed successively；
6) the second dielectric isolation layer and resistive layer are sequentially formed in the top layer silicon face, defines adding thermal resistance figure and temperature
Sensor pattern, etching remove second insulation outside the adding thermal resistance figure and the temperature sensor graphics field every
Absciss layer and the resistive layer, to form temperature-sensitive resistor, adding thermal resistance, positioned at the temperature-sensitive resistor and the heating
Insulating barrier below resistance；
7) at the two ends of the temperature-sensitive resistor, the two ends of the adding thermal resistance and the top layer of anchor point is subsequently formed
Silicon face forms metal electrode；
8) photoetching, top layer silicon described in deep reaction ion etching, form anchor point, heating beam and resonance structure, the resonance knot
Structure include two extensional vibration beams and positioned at the extensional vibration beam two ends and with the extensional vibration beam connected vertically first
Electrode；
9) oxygen buried layer outside the anchor point corresponding region is removed.
The preparation method of 12. pressure resistance type Oven Controlled Oscillators according to claim 11, it is characterised in that：The deep trouth
Width less than or equal to the low stress polysilicon layer thicknesses twice；Width of the length of the deep trouth more than the heating beam
The lithography alignment deviation sum of degree and twice.
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