CN106549649B - N-type heavy doping Oven Controlled Oscillator and its constant-temperature control method - Google Patents
N-type heavy doping Oven Controlled Oscillator and its constant-temperature control method Download PDFInfo
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- CN106549649B CN106549649B CN201510591179.7A CN201510591179A CN106549649B CN 106549649 B CN106549649 B CN 106549649B CN 201510591179 A CN201510591179 A CN 201510591179A CN 106549649 B CN106549649 B CN 106549649B
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Abstract
The present invention provides a kind of N-type heavy doping Oven Controlled Oscillator and its constant-temperature control method, comprising: resonance structure, anchor point, heating beam and temperature sensor；Resonance structure includes N-type heavy doping extensional vibration beam and first electrode；N-type heavy doping extensional vibration beam and first electrode are along monocrystalline silicon<100>crystal orientation race directional spreding；Anchor point is located at the two sides of resonance structure；It heats beam and runs through N-type heavy doping extensional vibration beam；Temperature sensor is located at anchor point surface.There are zero crossing, the temperature of frequency-temperature coefficient zero crossing is determined frequency-temperature coefficient in the present invention along the N-type heavy doping structure of<100>crystal orientation race by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race temperature coefficient of resonance frequency zero crossing can be made to be slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, and thermostatic control can be realized in galvanization on heating beam, so that N-type heavy doping Oven Controlled Oscillator has preferable stability and preferable temperature characterisitic.
Description
Technical field
The present invention relates to sensor fields, more particularly to a kind of N-type heavy doping Oven Controlled Oscillator and its constant temperature control
Method processed.
Background technique
Oscillator is that the primary element of clock frequency is provided in digital electronic system, is almost both needed in all electronic systems
It uses.In modern communication systems, since frequency resource is limited and user is numerous, high want is proposed to the stability of oscillator
It asks.GSM mobile handset requires the full warm area frequency stability of oscillator within ± 2.5ppm, and mobile base station requires the steady of oscillator
It is qualitative within ± 0.05ppm.
For a long time, quartz-crystal resonator is always that the main element of clock frequency signal is provided in electronic system,
Performance is stablized, good temp characteristic.But quartz (controlled) oscillator is difficult to integrate, and is limited by mechanical processing tools and is difficult to make high frequency vibrating
Device is swung, and anti-seismic performance is poor, it is difficult to meet the needs of following intelligent movable equipment.
Silicon substrate oscillator is using the oscillator of new generation of micro-electromechanical technology (MEMS) technology production, and resonance characteristic is excellent
It is different, convenient for being integrated with integrated circuit, it can be achieved that the frequency of oscillation of GHz magnitude exports, and can tolerate HI high impact environment.
The main problem that silicon substrate oscillator must solve is the temperature-compensating of frequency.The frequency stability of oscillator is wanted
Ask high, such as 3 grades of clocks require the long-time stability within the scope of -40~85 DEG C to be better than 4.6ppm.But on the other hand, monocrystalline silicon
The temperature coefficient of young modulus is up to -56ppm/ DEG C, and caused frequency-temperature coefficient is up to -30ppm/ DEG C.As a comparison, not mending
The AC-cut quartz resonance structure repaid within the scope of -40~85 DEG C frequency-temperature coefficient in 26ppm or so.The full warm area frequency of silicon
It is more than temperature coefficient two orders of magnitude bigger than quartz.Temperature-compensating has been significantly greatly increased in up to -30ppm/ DEG C of frequency-temperature coefficient
Difficulty.Stanford Univ USA Kenny et al. had developed a kind of thermostatic control MEMS oscillator in 2010, humorous using MEMS
The low feature of structure thermal capacity of shaking, it is only necessary to which the power consumption of mW magnitude can be expected to realize low function by resonance structure constant temperature at 90 DEG C
The temperature-compensating of consumption.But since silicon frequency-temperature coefficient is up to -30ppm/ DEG C, in order to realize the temperature stability (3E of 1ppm
Grade clock), it is necessary to assure Quan Wenqu interior resonance structure steady temperature is fluctuated less than 0.033 DEG C, realizes that difficulty is high.
Occur in recent years heavy doping passive compensation technique by directly reducing the temperature coefficient of silicon Young's modulus, to reducing
The frequency-temperature coefficient of resonance structure is the important method for realizing low-power consumption high stable silicon oscillator.
Passively compensated heavy doping is the skill that monocrystalline silicon Young's modulus temperature coefficient is directly changed by p-type or N-type heavy doping
Art, experiment show that this method has little effect the Q value of resonance structure, are current most promising passive compensation techniques.
The effect that heavy doping changes semiconductor Young's modulus temperature coefficient is a kind of carrier redistribution effect.Early in previous generation
Keyes sixties et al. that records just has made more detailed research to the theory of the effect, establishes the model based on band theory.
The model of Keyes et al. shows that the strain along certain particular crystal orientations can be such that degeneracy semiconductor energy band boundary relative position becomes
Change, carrier is caused to redistribute in different energy bands, and the redistribution of carrier reduces elastic potential energy caused by strain,
To affect Young's modulus.The generation mechanism of the effect is similar to piezoresistive effect, closely related with crystal orientation, doping type, and
It is little with specific foreign ion relationship.In semiconductor, the strain in certain crystal orientation will cause the generation of energy band boundary relative position
Variation, then there are piezoresistive effects for these crystal orientation, while on the Young's modulus of these crystal orientation, there is also significantly affect for doping.And it is certain
The overall offset that strain in crystal orientation only will cause each energy band does not occur again without changing energy band boundary relative position, carrier
Distribution, then without apparent piezoresistive effect in these crystal orientation, doping does not also influence the Young's modulus of these crystal orientation significantly.
1967, it was 2 × 10 that Hall et al., which has obtained doping concentration by the velocity of sound in measurement semiconductor,19/cm3N-type silicon be rigidly
The variation with doping concentration is counted, Young's modulus can be directly calculated by stiffness coefficient tensor.For a long time, due to silicon Young mould
There is no specific application, correlative studys not to obtain further development for the doping effect of amount.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of N-type heavy doping thermostatic controls
Oscillator and its constant-temperature control method, for solving in the prior art since silicon substrate oscillator has up to -30ppm/ DEG C of frequency
The relatively difficult problem of the temperature-compensating of frequency caused by rate temperature coefficient.
In order to achieve the above objects and other related objects, the present invention provides a kind of N-type heavy doping Oven Controlled Oscillator, institute
Stating N-type heavy doping Oven Controlled Oscillator includes: resonance structure, anchor point, heating beam and temperature sensor；
The resonance structure includes N-type heavy doping extensional vibration beam and first electrode；The first electrode is located at the N-type
The both ends of heavy doping extensional vibration beam；The N-type heavy doping extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystalline substance
To race's directional spreding；
The anchor point is located at the two sides of the resonance structure, and is spaced a distance with the resonance structure；
The heating beam runs through the N-type heavy doping extensional vibration beam, and the both ends of the heating beam be located at it is described
In anchor point；
The temperature sensor is located at the anchor point surface.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the N-type heavy doping is longitudinally shaken
The quantity of dynamic beam is two, two N-types heavy doping extensional vibration Liangping row interval arrangement；The first electrode is by described two
Root N-type heavy doping extensional vibration beam is connected.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the N-type heavy doping is longitudinally shaken
The concentration of N-type heavy doping is greater than 10 in dynamic beam19/cm3。
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, it is described heating beam midpoint with
The midpoint of the resonance structure coincides.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the heating beam includes monocrystalline
Silicon layer, the first insulating layer, adding thermal resistance and second electrode；The monocrystalline silicon layer, first insulating layer and the adding thermal resistance
It stacks gradually from the bottom to top, the second electrode is located at the surface at the adding thermal resistance both ends.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the monocrystalline silicon layer, the anchor
Point and the first electrode are N-type heavy doping structure, and the monocrystalline silicon layer, the anchor point, the N-type heavy doping longitudinally vibration
Dynamic beam and the first electrode are integrated.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the N-type heavy doping constant temperature control
Oscillator processed further includes third electrode, and the third electrode is located in the anchor point, and the resonance structure passes through the third electricity
Realize that electricity is drawn in pole.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the N-type heavy doping constant temperature control
Oscillator processed further includes substrate and second insulating layer, and the anchor point is fixed on the surface of the substrate by the second insulating layer
On；The lower surface of the surface of the substrate and the resonance structure and the heating beam has certain spacing.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the temperature sensor includes
Temperature-sensitive resistor, the 4th electrode and third insulating layer；The temperature-sensitive resistor passes through the third insulating layer and the anchor
Point is connected, and realizes that electricity is drawn by the 4th electrode.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the temperature sensor includes
Temp.-sensitive diodes.
As a kind of preferred embodiment of N-type heavy doping Oven Controlled Oscillator of the invention, the N-type heavy doping constant temperature control
Oscillator processed is packaged in vacuum environment.
The present invention also provides a kind of constant-temperature control method of N-type heavy doping Oven Controlled Oscillator, the thermostatic control sides
Method includes:
It will be along the frequency-temperature coefficient zero crossing tune of the resonance structure of<100>crystal orientation race directional spreding using N-type heavy doping
Whole arrive is slightly larger than operation temperature area；
The operating temperature of the resonance structure of the edge<100>crystal orientation race directional spreding is controlled in frequency by thermostatic control
Temperature coefficient zero crossing realizes the silicon substrate oscillator of high-temperature stability.
A kind of preferred embodiment of constant-temperature control method as N-type heavy doping Oven Controlled Oscillator of the invention, passes through
Thermostatic control controls the operating temperature of the resonance structure of the edge<100>crystal orientation race directional spreding in frequency-temperature coefficient zero passage
Point method particularly includes:
The resonance structure is supported using heating beam；The midpoint phase at the resonance structure midpoint and the heating beam
It is overlapped；
Galvanization makes the temperature of the heating beam midpoint reach<100>crystal orientation frequency-temperature coefficient on the heating beam
Zero crossing, to realize thermostatic control.
A kind of preferred embodiment of constant-temperature control method as N-type heavy doping Oven Controlled Oscillator of the invention, it is described
Heating beam includes adding thermal resistance, and the both ends of the heating beam are equipped with anchor point, and the anchor point is equipped with temperature sensor；Add described
Galvanization is thermostatically controlled to realize on hot beam method particularly includes:
Pass through the temperature T at anchor point described in the temperature sensor measurementa, by predetermined work temperaturetAnd TaIt is logical
Cross formula:
P=β (Tt-Ta)
Heating power is calculated；In formula, β is the function for heating beam size and thermal conductivity；
And heating voltage V is obtained by the average resistance value of the adding thermal resistancet, apply the heating electricity on the heating beam
Press VtThermostatic control can be realized.
A kind of preferred embodiment of constant-temperature control method as N-type heavy doping Oven Controlled Oscillator of the invention, it is described
Heating beam includes adding thermal resistance, and the both ends of the heating beam are equipped with anchor point, and the anchor point is equipped with temperature sensor；Add described
Galvanization is thermostatically controlled to realize on hot beam method particularly includes:
Pass through the temperature T at anchor point described in the temperature sensor measurementa, apply heated current on the heating beam,
The resistance R of the heating beam is measured simultaneouslyr；The resistance R of the heating beamrMeet formula:
Rr=Rr0+Rr0α((1-γ)Tm+γTa+Tt)
In formula, Rr0For resistance value of the heating beam in operating temperature, α is the single order temperature coefficient of the heating beam,
TmFor the actual temperature of the heating beam midpoint, the numerical value of γ is determined by heating beam；
The heating beam midpoint temperature T is obtained using above-mentioned formulamWith the temperature T at the anchor pointaDifference DELTA T, lead to
It crosses feedback algorithm and thermostatic control is can be realized into the Δ T feedback control for minimizing realization resonance structure temperature.
As described above, N-type heavy doping Oven Controlled Oscillator of the invention and its constant-temperature control method, have beneficial below
Effect: there are zero crossing, frequency-temperature coefficient zero crossings for the frequency-temperature coefficient of the N-type heavy doping structure of edge<100>crystal orientation race
Temperature determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race temperature coefficient of resonance frequency mistake can be made
Zero point is slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure, the galvanization on the heating beam are set
Thermostatic control can be realized, so that the N-type heavy doping Oven Controlled Oscillator has preferable stability and preferably temperature
Spend characteristic.
Detailed description of the invention
Fig. 1 is shown as the schematic perspective view of N-type heavy doping Oven Controlled Oscillator of the invention.
Fig. 2 is shown as the overlooking structure diagram of N-type heavy doping Oven Controlled Oscillator of the invention.
Fig. 3 is shown as the work vibration shape schematic diagram of resonance structure in N-type heavy doping Oven Controlled Oscillator of the invention.
Fig. 4 shows the flow chart of the constant-temperature control method of N-type heavy doping Oven Controlled Oscillator of the invention.
Component label instructions
10 resonance structures
101 N-type heavy doping extensional vibration beams
102 first electrodes
11 heating beams
111 monocrystalline silicon layers
112 first insulating layers
113 adding thermal resistances
12 anchor points
13 temperature sensors
131 temperature-sensitive resistors
132 the 4th electrodes
133 third insulating layers
14 second electrodes
15 third electrodes
16 substrates
17 second insulating layers
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
It please refers to Fig.1 to Fig.4 it should be noted that diagram provided in the present embodiment only illustrates this hair in a schematic way
Bright basic conception, though only show in diagram with related component in the present invention rather than component count when according to actual implementation,
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component
Being laid out kenel may also be increasingly complex.
Embodiment one
Fig. 1 to Fig. 2 is please referred to, the present invention provides a kind of N-type heavy doping Oven Controlled Oscillator, and the N-type heavy doping is permanent
Temperature control oscillator includes: resonance structure 10, anchor point 12, heating beam 11 and temperature sensor 13；
The resonance structure 10 includes N-type heavy doping extensional vibration beam 101 and first electrode 102；The first electrode 102
Positioned at the both ends of the N-type heavy doping extensional vibration beam 101；The N-type heavy doping extensional vibration beam 101 and the first electrode
102 along monocrystalline silicon<100>crystal orientation race directional spreding；The anchor point 12 is located at the two sides of the resonance structure 10, and with it is described
Resonance structure 10 is spaced a distance；The heating beam 11 run through the N-type heavy doping extensional vibration beam 101, and it is described plus
The both ends of hot beam 11 are located in the anchor point 12；The temperature sensor 13 is located at 12 surface of anchor point, specifically, institute
Temperature sensor 13 is stated to be located on the anchor point 12 of any side of the N-type heavy doping extensional vibration beam 101.
As an example, the N-type heavy doping extensional vibration beam 101 and the first electrode 102 are along monocrystalline silicon<100>crystalline substance
Concretely to race's directional spreding: the resonance structure 10 can use (100) silicon wafer to manufacture, and the N-type heavy doping is longitudinally shaken
Dynamic beam 101 can along (001) crystal face [100] crystal orientation, and the first electrode 102 can along (100) crystal face [010] it is brilliant
To.Along<100>crystal orientation race N-type heavy doping structure frequency-temperature coefficient there are zero crossing, frequency-temperature coefficient zero crossing
Temperature is determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation temperature coefficient of resonance frequency zero crossing can be made
The slightly above upper limit of oscillator operation warm area.
As an example, as shown in Figures 1 and 2, the quantity of the N-type heavy doping extensional vibration beam 101 can be but not only
It is limited to two, two N-types heavy doping extensional vibration beam, the 101 parallel interval arrangement；The first electrode 102 is by described two
N-type heavy doping extensional vibration beam 101 is connected.
As an example, the concentration of N-type heavy doping can be according to actual needs in the N-type heavy doping extensional vibration beam 101
It is set, it is preferable that the concentration of N-type heavy doping should be greater than in the extensional vibration of N-type heavy doping described in the present embodiment beam 101
1019/cm3。
As an example, the midpoint of the heating beam 11 and the midpoint of the resonance structure 10 coincide, i.e., the described heating beam
11 be the midpoint of the N-type heavy doping extensional vibration beam 101 with the tie point of the N-type heavy doping extensional vibration beam 101, to scheme
1 to Fig. 2 be example, at this time it is described heating beam 11 center be located at two N-types heavy doping extensional vibration beam 101 midpoint it
Between center at.The tie point of the heating beam 11 and the N-type heavy doping extensional vibration beam 101 is located at the N-type heavy doping
The smallest point of the longitudinal stretching modal displacement of extensional vibration beam 101 is located in the N-type heavy doping extensional vibration beam 101
At point, so that therefore influence of the heating beam 11 to the resonance structure 10 work vibration shape is minimum.
As an example, the heating beam 11 includes monocrystalline silicon layer 111, the first insulating layer 112 and adding thermal resistance 113；It is described
Monocrystalline silicon layer 111, first insulating layer 112 and the adding thermal resistance 113 stack gradually from the bottom to top；The monocrystalline silicon layer
111 are connected with two N-types heavy doping extensional vibration beam, 101 electricity.11 both ends of heating beam are equipped with second electrode 14,
Apply voltage in the second electrode 14, the heating beam 11 and the resonance structure 10 can be heated.The adding thermal resistance 113
For the thermostatic control of the heating beam 11, heated at constant temperature power P and two N-types heavy doping extensional vibration beam, 101 midpoint
Temperature Tt, anchor point temperature TaBetween meet formula:
P=β (Tt-Ta)
In formula, β is the function for heating beam size and thermal conductivity；β when heating beam is homogeneous rectangular cross section beam, in above formula
Meet formula:
β=8kbh/L
In formula, k is the thermal conductivity of the heating beam 11, and b, h and L are respectively width, thickness and the length of the heating beam 11
Degree.In practical structures, β is determined by actual experiment.
As an example, the monocrystalline silicon layer 111, the anchor point 12 and the first electrode 102 are N-type heavy doping knot
Structure, and the monocrystalline silicon layer 111, the anchor point 12, the N-type heavy doping extensional vibration beam 101 and the first electrode 102 are
Integral structure, i.e., the described monocrystalline silicon layer 111, the anchor point 12, the N-type heavy doping extensional vibration beam 101 and described first
Electrode 102 can be obtained by etching same single crystal silicon material layer.
As an example, the N-type heavy doping Oven Controlled Oscillator further includes third electrode 15, the third electrode 15
Quantity is two, is located in two anchor points 12 of 10 two sides of resonance structure, the resonance structure 10 passes through institute
It states third electrode 15 and realizes that electricity is drawn.It should be noted that the structure of the third electrode 15 is not limited in Fig. 1 and Fig. 2
It is shown, it can be set according to practical structures, for example, for capacitance detecting formula oscillator, described two third electrodes
15 can be shorted and use as an electrode.
As an example, the N-type heavy doping Oven Controlled Oscillator further includes substrate 16 and second insulating layer 17, the anchor
Point 12 is fixed on the surface of the substrate 16 by the second insulating layer 17；The surface of the substrate 16 and the resonance knot
The lower surface of structure 10 and the heating beam 11 has certain spacing, i.e., the described heating beam 11 supports the resonance structure 10
Come, and the resonance structure 10 is made to be in vacant state relative to the substrate 16.
As an example, the temperature sensor 13 includes temperature-sensitive resistor 131, the 4th electrode 132 and third insulating layer
133；The temperature-sensitive resistor 131 is connected by the third insulating layer 133 with the anchor point 12, and passes through the 4th electricity
Realize that electricity is drawn in pole 132；The temperature sensor 13 forms resistance bridge by external three resistance (not shown)
Realize the measurement to 12 temperature of anchor point.
As an example, the quantity of the 4th electrode 132 can be set according to actual needs, it is preferable that this implementation
In example, the quantity of the 4th electrode 132 is two, and described two 4th electrodes 132 are located at the temperature-sensitive resistor 131
On；Specifically, described two 4th electrodes 132 are located at the both ends of the temperature-sensitive resistor 132.
As an example, the temperature sensor 13 is not limited only to structure shown in FIG. 1, the temperature sensor 13 can also be adopted
With various ways such as temp.-sensitive diodes.
As an example, the N-type heavy doping Oven Controlled Oscillator is packaged in vacuum environment.
The work vibration shape of the resonance structure 10 is as shown in figure 3, two N-types heavy doping extensional vibration beam 101 is vertical
To mode (Length Extensional Mode, LE mode) is stretched, the first electrode 102 is parasitic three rank bending vibrations
Mode；The resonance frequency of the work of resonance structure 10 vibration shape is uniquely determined by silicon<100>crystal orientation Young's modulus.
In the present invention, there are zero crossing, frequency temperature for the frequency-temperature coefficient of the N-type heavy doping structure of edge<100>crystal orientation race
The temperature of degree coefficient zero crossing is determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race resonance frequency can be made
Rate temperature coefficient zero crossing is slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, is added described
Thermostatic control can be realized in galvanization on hot beam, so that the N-type heavy doping Oven Controlled Oscillator has preferable performance steady
Qualitative and preferable temperature characterisitic.
Embodiment two
Referring to Fig. 4, the present invention also provides a kind of constant-temperature control method of N-type heavy doping Oven Controlled Oscillator, it is described
Constant-temperature control method includes:
S1: will be along the frequency-temperature coefficient zero crossing of the resonance structure of<100>crystal orientation race directional spreding using N-type heavy doping
It is adjusted to slightly larger than operation temperature area；
S2: the operating temperature control of the resonance structure of the edge<100>crystal orientation race directional spreding is existed by thermostatic control
Frequency-temperature coefficient zero crossing realizes the silicon substrate oscillator of high-temperature stability.
S1 step is executed, the S1 step in Fig. 4 is please referred to, it will be along<100>crystal orientation race directional spreding using N-type heavy doping
The frequency-temperature coefficient zero crossing of resonance structure is adjusted to slightly larger than operation temperature area.
As an example, the resonance structure includes two N-type heavy doping extensional vibration beams and first electrode；Two N
The arrangement of type heavy doping extensional vibration Liangping row interval, the first electrode are located at two N-types heavy doping extensional vibration beam
Both ends, and two N-types heavy doping extensional vibration beam is connected.
As an example, passing through when the operating temperature of the N-type heavy doping Oven Controlled Oscillator is -40 DEG C~-85 DEG C
N-type heavy doping keeps the frequency-temperature coefficient zero crossing of the resonance structure of the edge<100>crystal orientation race directional spreding attached positioned at 90 DEG C
Closely.
As an example, the doping concentration of the N-type heavy doping should be greater than 1019/cm3；The atomic type of the N-type heavy doping
Including the conventional n-type doping such as phosphorus, arsenic；Doping process is the common technique of integrated circuit.
S2 step is executed, by thermostatic control by the work temperature of the resonance structure of the edge<100>crystal orientation race directional spreding
Degree control realizes the silicon substrate oscillator of high-temperature stability in frequency-temperature coefficient zero crossing.
As an example, passing through thermostatic control in S2 step for the resonance structure of the edge<100>crystal orientation race directional spreding
Operating temperature is controlled in frequency-temperature coefficient zero crossing method particularly includes:
S21: the resonance structure is supported using heating beam；The heating beam runs through the two N-type heavy doping
It is heavily doped that the tie point of extensional vibration beam, the heating beam and two N-types heavy doping extensional vibration beam is located at two N-types
The midpoint of miscellaneous extensional vibration beam, and the center of the heating beam is located at the midpoint of two N-types heavy doping extensional vibration beam
Between center at；
S22: galvanization makes the temperature of the heating beam midpoint reach<100>crystal orientation frequency temperature on the heating beam
Coefficient zero crossing, to realize thermostatic control.Thermostatically controlled operation is realized by special circuit.
As an example, the heating beam includes adding thermal resistance, the both ends of the heating beam are equipped with anchor point, set on the anchor point
There is temperature sensor；Galvanization makes two N-types heavy doping extensional vibration beam midpoint on the heating beam in step S22
Temperature reach<100>crystal orientation frequency-temperature coefficient zero crossing, it is thermostatically controlled to realize method particularly includes:
S221: by the temperature Ta at anchor point described in the temperature sensor measurement, by predetermined work temperature t
Pass through formula with Ta:
P=β (Tt-Ta)
Heating power is calculated；In formula, β is the function for heating beam size and thermal conductivity；
S222: and heating voltage V is obtained by the average resistance value of the adding thermal resistancet, on the heating beam described in application
Heating voltage VtThermostatic control can be realized.
As an example, the heating beam includes adding thermal resistance, the both ends of the heating beam are equipped with anchor point, set on the anchor point
There is temperature sensor；Galvanization makes the temperature of the heating beam midpoint reach<100>crystalline substance on the heating beam in step S22
It is thermostatically controlled to realize to frequency-temperature coefficient zero crossing method particularly includes:
S221: pass through the temperature T at anchor point described in the temperature sensor measurementa, apply heating on the heating beam
Electric current, while measuring the resistance R of the heating beamr；The resistance R of the heating beamrMeet formula:
Rr=Rr0+Rr0α((1-γ)Tm+γTa+Tt)
In formula, Rr0For resistance value of the heating beam in operating temperature, α is the single order temperature coefficient of the heating beam,
TmFor the actual temperature of the heating beam midpoint, unity gamma/3 when the heating beam is homogeneous rectangular cross section beam are practical to tie
γ is determined by experiment in structure；
S222: the heating beam midpoint temperature T is obtained using above-mentioned formulamWith the temperature T at the anchor pointaDifference
Δ T is minimized by feedback algorithm and realizes that thermostatic control can be realized in the feedback control of resonance structure temperature by Δ T；Specifically
Feedback algorithm can use but be not limited only to pid algorithm.Thermostatically controlled operation is realized by special circuit.
In conclusion the present invention provides a kind of N-type heavy doping Oven Controlled Oscillator and its constant-temperature control method, the present invention
N-type heavy doping Oven Controlled Oscillator include: resonance structure, anchor point, heating beam and temperature sensor；The resonance structure packet
Include N-type heavy doping extensional vibration beam and first electrode；The first electrode is located at the two of the N-type heavy doping extensional vibration beam
End；The N-type heavy doping extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystal orientation race directional spreding；The anchor
Point is located at the two sides of the resonance structure, and is spaced a distance with the resonance structure；The heating beam runs through the N-type
Heavy doping extensional vibration beam, and the both ends of the heating beam are located in the anchor point；The temperature sensor is located at described
Anchor point surface.Along the frequency-temperature coefficient of the N-type heavy doping structure of<100>crystal orientation race, there are zero crossing, frequency temperature in the present invention
The temperature of degree coefficient zero crossing is determined by doping concentration；By adjusting n-type doping concentration,<100>crystal orientation race resonance frequency can be made
Rate temperature coefficient zero crossing is slightly above the upper limit of oscillator operation warm area；Heating beam through resonance structure is set, is added described
Thermostatic control can be realized in galvanization on hot beam, so that the N-type heavy doping Oven Controlled Oscillator has preferable performance steady
Qualitative and preferable temperature characterisitic.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (13)
1. a kind of N-type heavy doping Oven Controlled Oscillator, which is characterized in that the N-type heavy doping Oven Controlled Oscillator includes:
Resonance structure, anchor point, heating beam and temperature sensor；
The resonance structure includes N-type heavy doping extensional vibration beam and first electrode；It is heavily doped that the first electrode is located at the N-type
The both ends of miscellaneous extensional vibration beam；The N-type heavy doping extensional vibration beam and the first electrode are along monocrystalline silicon<100>crystal orientation race
Directional spreding, the concentration of n-type doping is greater than 10 in the N-type heavy doping extensional vibration beam19/cm3；The anchor point is located at described humorous
The two sides for structure of shaking, and pre-determined distance is separated between the resonance structure；
The heating beam runs through the N-type heavy doping extensional vibration beam, and the both ends of the heating beam are located at the anchor point
It is interior；
The temperature sensor is located at the anchor point surface.
2. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the N-type heavy doping is longitudinal
The quantity of walking beam is two, two N-types heavy doping extensional vibration Liangping row interval arrangement；The first electrode will be described
Two N-type heavy doping extensional vibration beams are connected.
3. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the midpoint of the heating beam
It coincides with the midpoint of the resonance structure.
4. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the heating beam includes single
Crystal silicon layer, the first insulating layer, adding thermal resistance and second electrode；The monocrystalline silicon layer, first insulating layer and heating electricity
Resistance stacks gradually from the bottom to top, and the second electrode is located at the surface at the adding thermal resistance both ends.
5. N-type heavy doping Oven Controlled Oscillator according to claim 4, it is characterised in that: the monocrystalline silicon layer, described
Anchor point and the first electrode are N-type heavy doping structure, and the monocrystalline silicon layer, the anchor point, the N-type heavy doping are longitudinal
Walking beam and the first electrode are integrated.
6. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the N-type heavy doping constant temperature
Controlling oscillator further includes third electrode, and the third electrode is located in the anchor point, and the resonance structure passes through the third
Electrode realizes that electricity is drawn.
7. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the N-type heavy doping constant temperature
Controlling oscillator further includes substrate and second insulating layer, and the anchor point is fixed on the table of the substrate by the second insulating layer
On face；The lower surface of the surface of the substrate and the resonance structure has a default spacing, and the surface of the substrate with it is described
The lower surface for heating beam has default spacing.
8. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the temperature sensor packet
Include temperature-sensitive resistor, the 4th electrode and third insulating layer；The temperature-sensitive resistor by the third insulating layer with it is described
Anchor point is connected, and realizes that electricity is drawn by the 4th electrode.
9. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the temperature sensor packet
Include temp.-sensitive diodes.
10. N-type heavy doping Oven Controlled Oscillator according to claim 1, it is characterised in that: the N-type heavy doping is permanent
Temperature control oscillator is packaged in vacuum environment.
11. a kind of constant-temperature control method of N-type heavy doping Oven Controlled Oscillator, which is characterized in that the constant-temperature control method
Include:
The frequency-temperature coefficient zero crossing of the resonance structure along<100>crystal orientation race directional spreding is adjusted to using N-type heavy doping
Slightly larger than operation temperature area, the doping concentration of the N-type heavy doping is greater than 1019/cm3；
The resonance structure is supported using heating beam；The resonance structure midpoint is mutually be overlapped with the midpoint of the heating beam
It closes；
Galvanization makes the temperature of the heating beam midpoint reach<100>crystal orientation frequency-temperature coefficient zero passage on the heating beam
Point realizes the silicon substrate oscillator of high-temperature stability to realize thermostatic control.
12. the constant-temperature control method of N-type heavy doping Oven Controlled Oscillator according to claim 11, it is characterised in that:
The heating beam includes adding thermal resistance, and the both ends of the heating beam are equipped with anchor point, and the anchor point is equipped with temperature sensor；Institute
It is thermostatically controlled to realize to state galvanization on heating beam method particularly includes:
Pass through the temperature T at anchor point described in the temperature sensor measurementa, by predetermined work temperaturetAnd TaPass through public affairs
Formula:
P=β (Tt-Ta)
Heating power is calculated；In formula, β is the function for heating beam size and thermal conductivity；
And heating voltage V is obtained by the average resistance value of the adding thermal resistancet, apply the heating voltage V on the heating beamt
Thermostatic control can be realized.
13. the constant-temperature control method of N-type heavy doping Oven Controlled Oscillator according to claim 11, it is characterised in that:
The heating beam includes adding thermal resistance, and the both ends of the heating beam are equipped with anchor point, and the anchor point is equipped with temperature sensor；Institute
It is thermostatically controlled to realize to state galvanization on heating beam method particularly includes:
Pass through the temperature T at anchor point described in the temperature sensor measurementa, apply heated current on the heating beam, survey simultaneously
Measure the resistance R of the heating beamr；The resistance R of the heating beamrMeet formula:
Rr=Rr0+Rr0α((1-γ)Tm+γTa+Tt)
In formula, Rr0For resistance value of the heating beam in operating temperature, α is the single order temperature coefficient of the heating beam, TmFor
The actual temperature of the heating beam midpoint, the numerical value of γ determines by heating beam, TtFor predetermined operating temperature；
The heating beam midpoint temperature T is obtained using above-mentioned formulamWith the temperature T at the anchor pointaDifference DELTA T, by anti-
Feedback algorithm, which minimizes Δ T, realizes that thermostatic control can be realized in the feedback control of resonance structure temperature.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1849746A (en) * | 2003-09-10 | 2006-10-18 | 皇家飞利浦电子股份有限公司 | Electromechanical transducer and electrical device |
| WO2007126537A3 (en) * | 2006-04-06 | 2008-07-03 | Sitime Corp | Oscillator system having a plurality of microelectromechanical resonators and method of designing controlling or operating same |
| US7427905B2 (en) * | 2004-03-04 | 2008-09-23 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
| CN102299696A (en) * | 2010-06-10 | 2011-12-28 | Nxp股份有限公司 | MEMS resonators |
-
2015
- 2015-09-17 CN CN201510591179.7A patent/CN106549649B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1849746A (en) * | 2003-09-10 | 2006-10-18 | 皇家飞利浦电子股份有限公司 | Electromechanical transducer and electrical device |
| US7427905B2 (en) * | 2004-03-04 | 2008-09-23 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
| WO2007126537A3 (en) * | 2006-04-06 | 2008-07-03 | Sitime Corp | Oscillator system having a plurality of microelectromechanical resonators and method of designing controlling or operating same |
| CN102299696A (en) * | 2010-06-10 | 2011-12-28 | Nxp股份有限公司 | MEMS resonators |
Non-Patent Citations (3)
| Title |
|---|
| Doping-Induced Temperature Compensation of Thermally Actuated High-Frequency Silicon Micromechanical Resonators;Arash Hajjam et.al;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20120630;第21卷(第3期);681-687页 * |
| Real-Time Temperature Compensation of MEMS Oscillators Using an Integrated Micro-Oven and a Phase-Locked Loop;James C.Salvia et.al;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20100228;第19卷(第1期);192-201页 * |
| The Surface/Bulk Micromachining (SBM) Process:A New Method for Fabricating Released MEMS in Single Crystal Silicon;Sangwoo Lee et.al;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;19991231;第8卷(第4期);409-416页 * |
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