CN107697880B - A kind of temperature control vibration-isolating platform and system based on SOI-MEMS - Google Patents
A kind of temperature control vibration-isolating platform and system based on SOI-MEMS Download PDFInfo
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- CN107697880B CN107697880B CN201710857319.XA CN201710857319A CN107697880B CN 107697880 B CN107697880 B CN 107697880B CN 201710857319 A CN201710857319 A CN 201710857319A CN 107697880 B CN107697880 B CN 107697880B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
The invention belongs to MEMS device nuclear structure design fields, and specifically disclose a kind of temperature control vibration-isolating platform based on SOI-MEMS, it is disposed with anchoring structure layer, vibration isolation cantilever design layer, temperature control console layer and MEMS oscillator articulamentum from bottom to up, is provided with insulating layer between vibration isolation cantilever design layer and temperature control console layer, between temperature control console layer and MEMS oscillator articulamentum；Temperature control console layer includes heating unit, temperature sensing unit, pad and interconnecting lead, and MEMS oscillator articulamentum includes MEMS oscillator bonding pad, pad and output interconnecting lead between the two.The present invention is suitable for the temperature control and vibration isolation of the devices such as MEMS oscillator, has many advantages, such as that overall volume is small, rate-adaptive pacemaker is stable, low in energy consumption, structure is simple, strong applicability, is particularly suitable for the application field of miniaturization, high stable frequency reference.
Description
Technical field
The invention belongs to MEMS device nuclear structure design fields, more particularly, to a kind of temperature based on SOI-MEMS
Control vibration-isolating platform and system.
Background technique
Reference frequency is the core of all modern electronic equipments, and provides pulse for digital device.Currently, quartz crystal is used
In most of timing sources, to provide stable signal, it is ensured that high-performance and reliability.It is processed due to quartz crystal and is added with semiconductor
Work technique it is incompatible, oscillator industry can not benefit from always silicon-based electronic technology index development.Due to MEMS resonator/
Oscillator only has about several hundred microns, can be vibrated with mhz frequencies, and manufacture can be compatible with semiconductor devices manufacture, thus just
In realizing the miniaturization of oscillator and integrated with integrated circuit.Therefore, it is based on the oscillator of MEMS (MEMS) technology
Quartz (controlled) oscillator is gradually substituted in timing application.
Influence of the performance of quartz crystal vulnerable to temperature change and extraneous vibration.In order in the application of high precision reference frequency
Using quartz (controlled) oscillator, some form of temperature-compensating and vibration isolation is needed to handle.United States Patent (USP) US5530408A discloses one kind
Thermostat controls crystal oscillator (OCXO, oven controlled crystal oscillator) technology, is shaken by control
The method swung device environment temperature and greatly improve output frequency stability.Resonator is placed in high stability by this method, and high fever increases
In beneficial insulating box, the temperature upper limit of insulating box and lower limit are arranged in the inflection temperature of quartz-crystal resonator or close to resonators
Inflection temperature keeps temperature in thermostat, prevents the variation of the resonance frequency due to caused by environmental change.With quartz crystal one
Sample, MEMS resonant minor structure are also also influenced and are caused the output of MEMS oscillator by variation of ambient temperature and extraneous vibration impact
Frequency is drifted about up and down.
Oscillator is indispensable high stable frequency reference, either quartz crystal in high-altitude and space high-speed aircraft
Oscillator or MEMS oscillator, due to the essence of its mechanical structure, the influence of all inevitable extraneous vibration and impact to it.
Frequency drift caused by extraneous vibration and impact and phase noise will likely seriously affect its precision and reliability, and then cause whole
The failure of a system, or even generate catastrophic consequence.For example, the radar using low noise crystal oscillator is on aircraft or guided missile
When, its phase noise, which is influenced, by random vibration is deteriorated.Therefore, in order to improve system accuracy and reliability, it is necessary to oscillator
Vibration isolation measure is taken, to improve the ability that it adapts to work under various severe environmental conditions.Traditional oscillator vibration isolation is to pass through
The PCB construction of special designing or external mechanical structure have the defects that size is larger, energy consumption is high.
Summary of the invention
For existing temperature controlled crystal oscillator volume big, big energy-consuming, can not be compatible with modern microelectronic processing technology
Disadvantage, the present invention provides a kind of temperature control vibration-isolating platforms and system based on SOI-MEMS suitable for MEMS oscillator, wherein
In conjunction with the trend toward miniaturization and application characteristic of MEMS oscillator, using the vibration-isolating platform and perseverance of the manufacture miniaturization of MEMS processing technology
Warm temperature control console, the miniaturization of frequency reference device is realized using MEMS package technique, and system can not reduce rate-adaptive pacemaker
Under conditions of performance, conventional temperature control oscillator volume and weight is dramatically reduced, reduces device power consumption, is filled for high-performance
Standby, especially high-performance mobile is equipped, and provides small-sized, low-power consumption high stable frequency reference.
To achieve the above object, according to one aspect of the present invention, the invention proposes a kind of temperature based on SOI-MEMS
Control vibration-isolating platform comprising anchoring structure layer, vibration isolation cantilever design layer, temperature control console layer and the MEMS set gradually from bottom to up
Oscillator articulamentum, in which:
Silica buried oxide layer, the vibration isolation cantilever knot are provided between the anchoring structure layer and vibration isolation cantilever design layer
It is provided with the first insulating layer between structure layer and temperature control console layer, is arranged between the temperature control console layer and MEMS oscillator articulamentum
There is second insulating layer；
The temperature control console layer include interconnecting lead between heating unit, the first pad, heating unit and the first pad,
Interconnecting lead between temperature sensing unit, the second pad and temperature sensing unit and the second pad, the MEMS oscillator
Articulamentum includes defeated between MEMS oscillator bonding pad, third pad and MEMS oscillator bonding pad and third pad
Interconnecting lead out.
As it is further preferred that the anchoring structure layer and vibration isolation cantilever design layer are fabricated from a silicon.
As it is further preferred that the heating unit is preferably made of platinum with temperature sensing unit, the heating is single
Member and the whole serpentine-like structure of temperature sensing unit, preferably 0 DEG C of the resistance of heating unit when are 100 ohm, temperature sensing
It is 100 ohm at preferably 0 DEG C of the resistance of unit.
As it is further preferred that interconnecting lead between first pad, heating unit and the first pad, the second weldering
Interconnecting lead, MEMS oscillator bonding pad, third pad and output between disk, temperature sensing unit and the second pad is mutual
Even conducting wire is preferably made of gold.
As it is further preferred that the photoresist groove is preferably the groove that top opening size is less than bottom size.
As it is further preferred that the temperature control console layer is prepared in the following way:
(21) the first photoresist layer is prepared in the upper surface of first insulating layer, is passed according to the heating unit and temperature
Feel the first photoresist layer described in the pattern etch of unit and form photoresist groove, prepares the first gold medal on first photoresist layer
Belong to film layer, then remove first photoresist layer and the first metal film layer thereon, reservation is filled in the photoresist
The first metal film layer in groove, to prepare heating unit and temperature sensing unit；
(22) the second photoresist layer is prepared in the upper surface of first insulating layer, according to first pad, the second weldering
The interconnecting lead between interconnecting lead and temperature sensing unit and the second pad between disk, heating unit and the first pad
Second photoresist layer described in pattern etch forms photoresist groove, prepares the second metallic film on second photoresist layer
Then layer removes second photoresist layer and the second metal film layer thereon, retain the be filled in photoresist groove
Two metal film layers, to prepare the first pad, the second pad, interconnecting lead and interconnecting lead.
As it is further preferred that the MEMS oscillator articulamentum is prepared in the following way:
(31) it leads having prepared heating unit, the first pad, temperature sensing unit, the second pad, interconnecting lead and interconnection
Second insulating layer is prepared on first insulating layer of line；
(32) third photoresist layer is prepared in the upper surface of the second insulating layer, is combined and is welded according to the MEMS oscillator
Third photoresist layer described in the pattern etch of disk, third pad and output interconnecting lead between the two is to form photoresist ditch
Slot prepares third metal film layer on the third photoresist layer, then remove the third photoresist layer and thereon the
Three metal film layers retain the third metal film layer being filled in photoresist groove, to prepare MEMS oscillator combination
Pad, third pad and output interconnecting lead between the two.
It is another aspect of this invention to provide that providing a kind of temperature control vibrating isolation system based on SOI-MEMS comprising encapsulation
Shell and it is encapsulated in the intracorporal temperature control vibration-isolating platform of the encapsulating shell.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, mainly have below
Technological merit:
1. the temperature control vibration-isolating platform of researching and designing of the present invention is disposed with anchoring structure layer, vibration isolation cantilever knot from bottom to up
Structure layer, temperature control console layer and MEMS oscillator articulamentum provide the support to vibration isolation cantilever by anchoring structure layer, pass through vibration isolation
Cantilever design layer realizes the vibration isolation of MEMS oscillator, and the temperature conditioning unit by being located at temperature control console layer realizes that the temperature of platform measures
With control, by MEMS oscillator articulamentum for disposing MEMS oscillator/harmonic oscillator crystal grain, and power supply and frequency are provided
Output channel, the present invention have many advantages, such as that structure is simple, strong applicability.
2. the temperature control vibration-isolating platform of researching and designing of the present invention is miniaturization oscillator vibration insulation structure, specifically directly prepare
Temperature control vibration isolation MEMS vibrator structure based on SOI, and existing product only has MEMS oscillator and temperature controlled crystal oscillator,
There is no temperature control vibration isolation MEMS vibrators, and traditional Temperature Controlled Oscillator vibration insulation structure is in its external add-in machinery vibration insulation structure
Or retain portion void in pcb board circuit design, vibration insulation structure is realized by cut-off circuit Void-rich material, these designs are
Based on traditional material removal method, the miniaturization of vibration insulation structure cannot achieve.The present invention then combines the MEMS oscillation of miniaturization
Device directly processes the vibration-isolating platform of miniaturization using MEMS processing technology using harmonic oscillator crystal grain, realizes the small of vibration insulation structure
Type reduces phase noise caused by extraneous vibration.
3. the present invention can be such that MEMS vibrates by being placed in MEMS oscillator in the temperature control sensing and heating unit of miniaturization
Device keeps temperature constant, and output frequency drift value caused by being changed by ambient temperature be cut to minimum, platform and device
Miniaturization, which helps to reduce entire Temperature Controlled Oscillator energy consumption, further decreases device Platform by the buffer action of cantilever design
Heat transfer between anchoring structure reduces the thermal losses in device use process.
4. the present invention is also studied and designed to the specific preparation process of temperature control vibration-isolating platform, work is processed using MEMS
Effectively MEMS oscillator can be isolated with external vibration for the silicon substrate cantilever design of skill processing, reduce external shock to the frequency of oscillator
The influence of rate stability and phase noise, the preparation process of researching and designing of the present invention can effectively reduce the entirety of temperature control vibration insolation means
Size so that temperature control vibration insolation means minimize, and makes temperature control MEMS oscillator keep temperature controlled crystal oscillator output property on an equal basis
Under conditions of energy, processing technology and semiconductor technology compatibility, lower power consumption.
Detailed description of the invention
Fig. 1 is the SOI wafer structural schematic diagram of the embodiment of the present invention；
Fig. 2 is the growing epitaxial silicon schematic diagram of a layer structure of preparation of the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the first insulating layer of preparation of the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the heating unit of the embodiment of the present invention, temperature sensing unit, interconnecting lead and pad；
Fig. 5 is the heating unit of the embodiment of the present invention and the mask pattern of temperature sensing unit；
Fig. 6 is the interconnecting lead of the embodiment of the present invention and the mask pattern of pad；
Fig. 7 (a) and (b) are the knots of the photoresist groove using the preparation of negative photoresist lift-off technology of the embodiment of the present invention
Structure schematic diagram；
Fig. 8 (a) and (b) are the knots of the photoresist groove using the preparation of double-tiered arch dam lift-off technology of the embodiment of the present invention
Structure schematic diagram；
Fig. 9 (a) and (b) are the structural schematic diagrams of the metallic film of an embodiment of the present invention preparation；
Figure 10 (a) and (b) are the structural schematic diagrams of the metallic film of another embodiment preparation of the invention；
Figure 11 is the structural representation of the temperature controlling device with heating unit and temperature sensing unit of preparation of the embodiment of the present invention
Figure；
Figure 12 (a) and (b) be the embodiment of the present invention interconnecting lead and pad manufacturing process schematic diagram；
Figure 13 (a) and (b) be the embodiment of the present invention preparation the temperature controlling device structural schematic diagram with pad and interconnecting lead；
Figure 14 is the MEMS oscillator bonding pad of the embodiment of the present invention, the mask pattern for exporting interconnecting lead and pad；
Figure 15 is the structural schematic diagram of the second insulating layer of preparation of the embodiment of the present invention；
Figure 16 is the temperature control with MEMS oscillator bonding pad, output interconnecting lead and pad of preparation of the embodiment of the present invention
The structural schematic diagram of device；
Figure 17 is the processing structural schematic diagram of the vibration isolation cantilever design of the embodiment of the present invention；
Figure 18 is the schematic diagram that the coating photoresist layer of the embodiment of the present invention and development form vibration isolation cantilever design；
Figure 19 (a) and (b) are the second insulating layer of the embodiment of the present invention and the etching process schematic diagram of the first insulating layer；
Figure 20 is the schematic diagram of the coating bottom surface photoresist layer of the embodiment of the present invention and the bottom anchoring pattern that develops；
Figure 21 is the vibration isolation cantilever of the embodiment of the present invention and the DRIE etching process schematic diagram of anchoring structure；
Figure 22 is the main view of the temperature control vibration-isolating platform of preparation of the embodiment of the present invention；
Figure 23 is the top view of the temperature control vibration-isolating platform of preparation of the embodiment of the present invention；
Figure 24 is the structural schematic diagram that the temperature control vibration-isolating platform of the embodiment of the present invention encapsulates together with integrated circuit；
Figure 25 is the temperature control vibration-isolating platform of the embodiment of the present invention and the structural schematic diagram of integrated circuit individual packages；
Figure 26 is the overall structure diagram of the temperature control vibration-isolating platform of preparation of the embodiment of the present invention；
Figure 27 is that oscillator output frequencies vary with temperature curve.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As shown in figure 26, a kind of temperature control vibration-isolating platform based on SOI-MEMS provided in an embodiment of the present invention, the temperature control every
Vibration platform includes that the anchoring structure layer 11 (it is pedestal layer), vibration isolation cantilever design layer 12, temperature control set gradually from bottom to up is put down
Platform layer and MEMS oscillator articulamentum, wherein be provided with silica between anchoring structure layer 11 and vibration isolation cantilever design layer 12
Buried oxide layer 102 is provided in order to avoid influencing each other between each layer between vibration isolation cantilever design layer 12 and temperature control console layer
One insulating layer 105, is provided with second insulating layer 115 between temperature control console layer and MEMS oscillator articulamentum.Specifically, anchoring knot
Structure layer 11, silica buried oxide layer 102, vibration isolation cantilever design layer 12 are directly made of soi wafer, anchoring structure layer provide to every
Shake the support of cantilever design layer, can be for rectangle, circle or other are symmetrical, silica buried oxide layer 102 provide anchoring structure with
The connection and insulation of cantilever design, while the sacrificial layer in cantilever machining process is also acted as, cantilever is in symmetrical structure, and can
Multivariant linear and whirling vibration is isolated.As shown in figure 4, temperature control console layer include heating unit 21, the first pad 23,
Interconnecting lead 22, temperature sensing unit 24, the second pad 26 and temperature sensing between heating unit 21 and the first pad 23
Interconnecting lead 25 between unit 24 and the second pad 26；As shown in figure 14, MEMS oscillator articulamentum includes MEMS oscillator
Output interconnecting lead between bonding pad 31, third pad 33 and MEMS oscillator bonding pad 31 and third pad 33
32。
The specific preparation process of temperature control vibration-isolating platform of the invention is described in detail below, specifically uses SOI-MEMS
Preparation process carries out.
The preparation process of temperature control vibration-isolating platform of the invention mainly comprises the steps that
(1) SOI wafer pretreatment
(1.1) it is designed first according to vibration isolation cantilever design, selects SOI (the silicon on suitable thickness top silicon layer
Insulator) wafer, i.e. selection soi wafer, as shown in Figure 1, the soi wafer successively includes top silicon layer 101, two from top to bottom
Buried silicon oxide oxygen layer 102 and basal layer 103, wherein it is located at the top silicon layer 101 at top for processing vibration isolation cantilever design 12, and position
In middle part silica buried oxide layer 102 for realizing top silicon layer and basal layer isolation, be mainly used for cantilever processing technology mistake
Isolation and release in journey, thickness are preferably but not limited to 1 μm~10 μm, and the basal layer 103 positioned at bottom is for processing anchoring knot
Structure 11, thickness are preferably but not limited to 500 μm；
(1.2) it as shown in Fig. 2, carrying out epitaxial growth in SOI wafer top silicon layer using for example chemical vapour deposition technique, is formed
Comprising the top silicon layer and with the identical silicon epitaxial layer 104 of top silicon layer crystal structure, the thickness of the silicon epitaxial layer with
The thickness of vibration isolation cantilever design is identical, as preparation vibration isolation cantilever design layer basis, thickness it is preferred but it is unlimited 100 μm~
Between 500 μm, value by temperature control vibration-isolating platform dimension and weight, by protection MEMS resonator/oscillator weight, oscillation
The parameters such as device output frequency, vibration isolation cantilever design determine；
(1.3) as shown in figure 3, for example passing through thermal oxide, deposition or growth on 104 surface of silicon epitaxial layer obtains first
Insulating layer 105, first insulating layer 105 are preferably oxide insulating layer, be used for by heating unit and temperature sensing unit with
Silicon epitaxial layer 104 for processing vibration isolation cantilever insulate.
(2) processing of temperature control console layer
Heating unit 21, the first pad 23, temperature sensing unit 24, second are prepared in the upper surface of the first insulating layer 105
Interconnecting lead 22 and temperature sensing unit 24 and the second pad 26 between pad 26, heating unit 21 and the first pad 23 it
Between interconnecting lead 25, wherein heating unit, temperature sensing unit, pad, interconnecting lead structure design as shown in figure 4, plus
Hot cell 21 and temperature sensing unit 24 are designed as serpentine configuration, and preferably platinum material is made, and interconnecting lead and pad are then excellent
Select gold material.Wide temperature range, high temperature capabilities and to the repeatable response of temperature make platinum become high reliability temperature sensing
The ideal chose of application deposits the film platinum temperature of serpentine configuration by metal sputtering processes on silicon dioxide insulator substrate layer
Spend RTD sensor (i.e. temperature sensing unit) and heater (i.e. heating unit), heater as close as possible to and circular MEMS resonant
Device/oscillator makes heat caused by heater is as uniform as possible, stable, efficient to conduct to MEMS device, while keeping platform
Miniaturization, when heater resistance is preferably 0 DEG C be 100 ohm, and temperature sensing unit be disposed away from one end of heater with
Detection error caused by avoiding its direct detection heter temperature, platinum temperature sensor that from can generating heat to avoid its own, temperature
Sensing unit resistance is 1000 Ω when being 500 Ω, 0 DEG C when being 100 Ω, 0 DEG C when can select 0 DEG C, is 100 Ω at preferably 0 DEG C.
Certain distance and insulation are kept between temperature sensing unit 24 and heating unit 21, it is ensured that temperature sensing list in the case where not short-circuit
13 temperature of first 24 test platform, rather than 21 temperature of direct detection heating unit, interconnecting lead 22 and 25 depend on vibration isolation cantilever
It is connected on structure and by temperature sensing unit and heating unit with pad 23 with 26, interconnecting lead is right since its structure is tiny
Cantilever design vibration isolation mechanical property influences little.Heating unit, temperature sensor unit and platform are by cantilever design and thereon
Interconnecting lead and anchoring structure and pad realize mechanical and electrical connection, and the heat for greatly reducing platform and anchoring structure passes
Guide face product reduces device overall power to reduce the thermal losses of system.
Specifically, realizing the pattern transfer of this layer using two exposure masks, first exposure mask is as shown in figure 5, for making platinum
Golden heating unit and temperature sensing unit, second exposure mask is as shown in fig. 6, for making gold interconnecting lead and pad.Photoetching
Technique then uses negtive photoresist or double-tiered arch dam metal lift-off techniques to make.
This step (2) preferably includes following sub-step:
(21) as shown in Fig. 7 (a) and (b), negative photoresist is coated for example in the upper surface of the first insulating layer 105 to be formed
First photoresist layer 106, according to first photoetching of the pattern etch of heating unit 21 and temperature sensing unit 24 as shown in Figure 5
For glue-line 106 to form photoresist groove 107, the bottom surface of the photoresist groove 107 is the first insulating layer 105, as shown in Fig. 7 (b),
Photoresist groove 107 is the groove with the inside curve that drives in the wrong direction, i.e. its top opening size is less than its bottom size, so as to
Peeling layer is separated with thin-film device, and thin-film device can naturally be left by removing absciss layer to be stripped, and inwardly retrograde curve also may be used
Using double-tiered arch dam metal-stripping treatment process (LOR), being formed has top layer photoresist 109 and inside contracts bottom photoresist 108
The double-deck trench cross section shape, as shown in Fig. 8 (b)；Then the first metal film layer, example are prepared on the first photoresist layer 106
Such as the first metal film layer can be formed using radio-frequency sputtering or magnetron sputtering platinum thin film physical vapor sedimentation is preferably
Platinum film layer, which includes part to be stripped and part to be retained, wherein being covered in the first photoresist 106 (such as
Shown in Fig. 9 (a) and (b)) or double-tiered arch dam 108 and 109 (such as Figure 10 (a) and (b) shown in) on part be to be stripped
Platinum film layer 110, be filled in part that is in photoresist groove 107 and being directly covered on the first insulating layer 105 for make
For the platinum film layer 111 of heating unit and temperature sensing unit；It is finally peeled away the first photoresist layer 106 and the first gold medal thereon
Belong to film layer (i.e. platinum film layer 110), (i.e. platinum is thin for the first metal film layer that reservation is filled in photoresist groove 107
Film layer 111), to prepare the temperature controlling device as shown in figure 11 with heating unit and temperature sensing unit；
(22) with the removing of for example negative photoresist or double-tiered arch dam metal-stripping production heating unit and temperature sensing list
The interconnecting lead and pad of member: it is formed in the upper surface for the first insulating layer 105 for having prepared heating unit and temperature sensing unit
Second photoresist layer 114 is led according to the interconnection between the first pad 23, the second pad 26, heating unit 21 and the first pad 23
114 shape of the second photoresist layer of pattern etch of interconnecting lead 25 between line 22 and temperature sensing unit 24 and the second pad 26
At photoresist groove identical with photoresist groove 107, the bottom surface of the photoresist groove is the first insulating layer 105；Then
It is preferably gold film layer that the second metal film layer 113 is prepared on two photoresist layers 114, as shown in Figure 12 (a) and (b), the Huang
Gold thin film layer equally includes part to be stripped and part to be retained, wherein the part being covered on the second photoresist layer 114 is
Gold film layer 113 to be stripped, being filled in part that is in photoresist groove and being directly covered on the first insulating layer 105 is
Gold film layer 112 as interconnecting lead and pad；It is finally peeled away the second photoresist layer 114 and metal film layer thereon
(i.e. gold film layer 113) retains the second metal film layer (i.e. gold film layer 112) being filled in photoresist groove, with
Prepare temperature control console layer as shown in fig. 13 that.
(3) processing of MEMS oscillator articulamentum
Preparing heating unit 21, the first pad 23, temperature sensing unit 24, the second pad 26,22 and of interconnecting lead
Second insulating layer 115 is prepared on first insulating layer 105 of interconnecting lead 25, then prepares MEMS in the second insulating layer 115
Output interconnection between oscillator bonding pad 31, third pad 33 and MEMS oscillator bonding pad 31 and third pad 33
Conducting wire 32.Wherein, MEMS oscillator bonding pad 31 is used to weld with MEMS oscillator, realizes that the installation of MEMS oscillator is solid
Fixed, the structure design of MEMS oscillator bonding pad 31, interconnecting lead 32 and pad 33 is as shown in figure 14.
This step (3) preferably includes following sub-step:
(31) as shown in figure 15, heating unit 21, the first pad 23, temperature are for example being prepared using radio-frequency sputtering technique
Sensing unit 24, the second pad 26, interconnecting lead 22 and interconnecting lead 25 the first insulating layer 105 on prepare second insulating layer
115；
(32) using negative photoresist identical with previous process removing or the production of double-tiered arch dam metal lift-off material
Interconnecting lead and pad on MEMS oscillator binder course, specifically, for example coating negativity in the upper surface of second insulating layer 115
Photoresist is to form third photoresist layer, according to MEMS oscillator bonding pad 31, third pad 33 and between the two mutual
Even the pattern etch third photoresist layer of conducting wire 32 is to form photoresist groove identical with photoresist groove 107, the photoresist
The bottom surface of groove is second insulating layer 115, and third metal film layer, preferably gold film are prepared on third photoresist layer
Layer, which equally includes part to be stripped and part to be retained, wherein being covered in the portion on third photoresist layer
It is divided into the first gold film layer to be stripped, is filled in photoresist groove and is directly covered in the part in second insulating layer
For the second gold film layer as pad and interconnecting lead；It is finally peeled away third photoresist layer and third metallic film thereon
Layer (i.e. the first gold film layer) retains third metal film layer (i.e. the second gold film being filled in photoresist groove
Layer), to prepare the temperature controlling device as shown in figure 16 with MEMS oscillator bonding pad, interconnecting lead and third pad.
(4) processing of vibration isolation cantilever design layer and anchoring structure layer
The processing graphic pattern of vibration isolation cantilever design is as shown in figure 17, and vibration isolation cantilever design is arranged symmetrically, and cantilever uses straight beam, snake
Shape structure or other vibration insulation structures provide multi-degree-of-freedom vibration isolation, and cantilever geometric dimension is by platform and MEMS oscillator output frequency
Rate, weight, size determine that its natural frequency value can be reduced by reducing cantilever design and rigidity, reduce the loss of heat transfer, and vibration isolation is outstanding
Arm configuration layer center is that MEMS oscillator disposes platform 13, and the placement platform is for disposing MEMS micro element, including MEMS oscillation
Device/harmonic oscillator crystal grain, heating unit and temperature sensing unit, the size of platform is by MEMS chip, heating unit, temperature sensing list
Member, interconnecting lead size determine, size is minimum excellent when capable of disposing all devices, planform shape can be it is rectangular, round or
Other symmetrical structures.Second insulating layer 115 and the first insulating layer 105 are etched according to the processing graphic pattern of vibration isolation cantilever design to be formed
Groove 117, and basal layer 103 is etched to obtain required anchoring structure 11 according to the processing graphic pattern of anchoring structure, then etch
It is connected with groove 117 in silicon epitaxial layer 104, last etching silicon dioxide buried oxide layer 102, to prepare required
Temperature control vibration-isolating platform.
Specifically, firstly, as shown in figure 18, can be coated in second insulating layer 115 photoresist layer 116 and developing to be formed every
Shake cantilever design pattern, as shown in Figure 19 (a) and (b), etches top surface second insulating layer 115 and the first insulating layer 105 forms ditch
Slot 117 retains photoresist layer 116 and is used for subsequent technique, and the bottom surface of the groove 117 is silicon epitaxial layer 104, i.e., will be with vibration isolation
The second insulating layer 115 of cantilever design processing graphic pattern corresponding position and the first insulating layer 105 etch away；Then, such as Figure 20
It is shown, bottom surface photoresist layer 118 is coated in 103 lower surface of basal layer, bottom anchoring pattern transfer is completed in development；Then, as schemed
Shown in 21, two-sided DRIE silicon etching is carried out, it is connected with groove 117 to etch silicon epitaxial layer 104, is specifically etched to two
The upper surface of buried silicon oxide oxygen layer 102, and etch basal layer 103 to the lower surface of silica buried oxide layer 102 and obtain anchoring knot
Structure layer；Finally, dry etching is carried out to silica buried oxide layer 102, to etch away the dioxy of 12 lower section of vibration isolation cantilever design layer
Silica buried oxide layer is specifically located at anchoring structure 11 and hanged with vibration isolation by SiClx buried oxide layer to discharge vibration isolation cantilever design
Part between arm configuration 12, which is retained, not to be etched, and rest part etches away, then removes photoresist 116 and 118, is obtained as schemed
Temperature control vibration-isolating platform shown in 22 and Figure 23.
MEMS resonator crystal grain/oscillator chip 15 is placed in temperature control vibration-isolating platform center when use, and is directly welded at
On MEMS oscillator bonding pad 31 (as shown in figure 24), or passes through gold thread 53 and be connected (such as with MEMS oscillator bonding pad 31
Shown in Figure 25), and interconnecting lead 32 is exported then as MEMS crystal grain/oscillator chip signal output interconnecting lead and confession
Electricity, third pad 33 is then as the output of MEMS crystal grain/oscillator chip signal and power supply pad.The temperature upper limit of insulating box
The inflection temperature of MEMS resonator is set with lower limit or close to the inflection temperature of resonator, keeps temperature in thermostat, prevents
The temperature setting of the variation of the resonance frequency due to caused by environmental change, thermostat need to be higher than environment temperature.
The present invention also provides the temperature control vibrating isolation systems based on SOI-MEMS, and as shown in FIG. 24 and 25, being will be of the invention
Temperature control vibration-isolating platform be encapsulated in encapsulating housing 47 in order to subsequent use,
MEMS harmonic oscillator crystal grain/MEMS oscillator is specifically placed in temperature control vibration-isolating platform center, temperature control vibration-isolating platform with
MEMS harmonic oscillator crystal grain/MEMS oscillator is carried out using System-in-Package technology (System-on-package technology)
Encapsulation.Temperature control vibration-isolating platform need to arrange in pairs or groups with application-specific integrated circuit ASIC and use, and application-specific integrated circuit ASIC is for realizing resonator
Oscillation and thermostatic control, consider from MEMS oscillator industry is practical, resonator oscillating circuit can pass through crystalline substance with MEMS harmonic oscillator
First grade encapsulation is placed on device Platform, also can be integrated with constant temperature control circuit, and MEMS harmonic oscillator is individually placed in device and is put down
On platform, temperature control circuit realizes the detection of temperature and the control of heater.
Figure 24 is that temperature control vibration-isolating platform and specific integrated circuit (ASIC) 43 of the invention are encapsulated in encapsulating housing together
Interior structural schematic diagram, integrated circuit 43 is set to the inside of encapsulating housing, and is located at the lower section of temperature control vibration-isolating platform, sets on shell
Have temperature control vibration isolation oscillator output pin 44, the temperature control vibration isolation oscillator input and output pin 44 by connection gold thread and temperature control every
The pad to shake on platform is connected, which is by MEMS constant temperature vibration-isolating platform and specific integrated circuit using wafer scale key
It closes, realizes temperature control and/or oscillator control and output, such as Figure 24, placement platform and MEMS device are carried out using flip chip bonding
Connection, and temperature control vibration-isolating platform is connected the electric signal of temperature control vibration-isolating platform and specific integrated circuit 43 by circuit vias 45
It connects, the device after bonding is encapsulated in the encapsulating housing with thermal insulation layer.Figure 25 is to integrate temperature control vibration-isolating platform with dedicated
The structural schematic diagram of circuit (ASIC) individual packages, temperature control vibration-isolating platform is placed in insulating box, and specific integrated circuit passes through
External circuit pin completes the control to temperature and/or oscillator, and as shown in figure 25, it is defeated that shell is equipped with temperature control vibration isolation oscillator
Pin out, the temperature control vibration isolation oscillator input and output pin are connected with the pad on temperature control vibration-isolating platform, and integrated circuit 43 is set to
The outside of encapsulating housing.Traditional temperature controlled crystal oscillator is compared, temperature control MEMS oscillator size can reduce decades of times.This hair
Bright to be found under conditions of identical accuracy of temperature control by testing MEMS oscillator, furnace temperature is set in inflection point or nearby temperature
Degree will be helpful to improve the stability of Temperature Controlled Oscillator output frequency, therefore calorstat temperature is set in temperature-frequency curve
Inflection point is nearby to be optimal state.Specifically, the present invention is by several commercial MEMS oscillators and crystal oscillator in temperature of the same race
It is tested under degree environmental condition, the output frequency of tested oscillator is chosen but is not limited to 100MHz, is tested oscillator and its survey
Test plate (panel) is placed in constant temperature test furnace, and the output frequency of oscillator is after tested after the amplification and transmission of plate, input spectrum analyzer
It is acquired and analyzes, and be stored in computer system.Periodically heating down cycles strategy is applied to changing for test furnace temperature
Become, temperature test section is -50 DEG C to 100 DEG C, using oscillator output frequency when heating-holding temperature-measurement equilibrium temperature
The temperature cycles week that oscillator output frequencies-cool down again when rate-heats up again and cooling-holding temperature-measurement equilibrium temperature
Phase and measurement method, are divided into 5 DEG C between temperature rise, soaking time is 5-10 minutes, measured value three times when output frequency takes synthermal
Average value.Figure 27 is that certain three type MEMS oscillator and crystal oscillator output frequency vary with temperature curve graph, from figure it is found that ring
The variation of border temperature has an impact to the frequency drift of crystal oscillator and MEMS oscillator, and MEMS oscillator output frequency is steady
It is qualitative to be comparable with similar crystal oscillator.Since harmonic oscillator mechanical structure form is different in each oscillator, temperature change
Influence to the drift of different oscillator output frequencies is also different, and drift band is minimum at inflection point, in identical accuracy of temperature control
Under conditions of, furnace temperature is set in inflection point or neighbouring temperature will be helpful to improve the stability of Temperature Controlled Oscillator output frequency.
In short, the present invention is by being placed in the temperature control vibration reduction platform based on the processing of SOI-MEMS technology for MEMS oscillator
On, make MEMS oscillator keep temperature constant, while the influence of external environment vibration is isolated, to improve MEMS oscillator output
Frequency stability and reduction phase noise.Traditional temperature controlled crystal oscillator is compared, rate-adaptive pacemaker performance can not reduced
Under the conditions of, Temperature Controlled Oscillator volume and weight is dramatically reduced, device power consumption is reduced, is equipped for high-performance, it is especially high
Performance Mobile Equipment provides small-sized, low-power consumption high stable frequency reference.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of temperature control vibration-isolating platform based on SOI-MEMS, which is characterized in that the temperature control vibration-isolating platform include from bottom to up according to
Anchoring structure layer (11), vibration isolation cantilever design layer (12), temperature control console layer and the MEMS oscillator articulamentum of secondary setting, in which:
It is provided with silica buried oxide layer (102) between the anchoring structure layer (11) and vibration isolation cantilever design layer (12), it is described
It is provided between vibration isolation cantilever design layer (12) and temperature control console layer the first insulating layer (105), the temperature control console layer and MEMS
Second insulating layer (115) are provided between oscillator articulamentum；
The temperature control console layer include heating unit (21), the first pad (23), heating unit (21) and the first pad (23) it
Between the first interconnecting lead (22), temperature sensing unit (24), the second pad (26) and temperature sensing unit (24) and second
The second interconnecting lead (25) between pad (26), the MEMS oscillator articulamentum include MEMS oscillator bonding pad
(31), the output interconnecting lead between third pad (33) and MEMS oscillator bonding pad (31) and third pad (33)
(32)。
2. the temperature control vibration-isolating platform based on SOI-MEMS as described in claim 1, which is characterized in that the anchoring structure layer and
Vibration isolation cantilever design layer is fabricated from a silicon.
3. the temperature control vibration-isolating platform based on SOI-MEMS as claimed in claim 1 or 2, which is characterized in that the heating unit
(21) it is made with temperature sensing unit (24) of platinum, the heating unit (21) is whole serpentine-like with temperature sensing unit (24)
Structure, the resistance of the heating unit (21) are 100 ohm at 0 DEG C, and the resistance of temperature sensing unit is 100 Europe at 0 DEG C
Nurse.
4. the temperature control vibration-isolating platform based on SOI-MEMS as claimed in claim 3, which is characterized in that first pad
(23), the first interconnecting lead (22) between heating unit (21) and the first pad (23), the second pad (26), temperature sensing list
The second interconnecting lead (25), MEMS oscillator bonding pad (31), third pad between first (24) and the second pad (26)
(33) and output interconnecting lead (32) is made of gold.
5. the temperature control vibration-isolating platform based on SOI-MEMS as claimed in claim 4, which is characterized in that the temperature control console layer is adopted
It is prepared with such as under type:
(21) the first photoresist layer (106) are prepared in the upper surface of first insulating layer (105), according to the heating unit
(21) and the first photoresist layer (106) described in the pattern etch of temperature sensing unit (24) forms photoresist groove (107), in institute
It states and prepares the first metal film layer on the first photoresist layer (106), then remove first photoresist layer (106) and thereon
First metal film layer retains the first metal film layer being filled in the photoresist groove (107), to prepare heating
Unit (21) and temperature sensing unit (24)；
(22) the second photoresist layer (114) are prepared in the upper surface of first insulating layer (105), according to first pad
(23), the first interconnecting lead (22) between the second pad (26), heating unit (21) and the first pad (23) and temperature pass
Feel the second photoresist layer (114) described in the pattern etch of the second interconnecting lead (25) between unit (24) and the second pad (26)
Photoresist groove is formed, the second metal film layer is prepared on second photoresist layer (114), then removes second light
Photoresist layer (114) and the second metal film layer thereon retain the second metal film layer being filled in photoresist groove, with system
It is standby to obtain the first pad (23), the second pad (26), the first interconnecting lead (22) and the second interconnecting lead (25).
6. the temperature control vibration-isolating platform based on SOI-MEMS as claimed in claim 5, which is characterized in that the photoresist groove
(107) it is less than the groove of bottom size for top opening size.
7. the temperature control vibration-isolating platform based on SOI-MEMS as claimed in claim 5, which is characterized in that the MEMS oscillator connects
Layer is connect to prepare in the following way:
(31) heating unit (21), the first pad (23), temperature sensing unit (24), the second pad (26), first are being prepared
Second insulating layer (115) are prepared on first insulating layer (105) of interconnecting lead (22) and the second interconnecting lead (25)；
(32) third photoresist layer is prepared in the upper surface of the second insulating layer (115), is combined according to the MEMS oscillator
Third photoresist layer described in the pattern etch of pad (31), third pad (33) and output interconnecting lead (32) between the two
To form photoresist groove, third metal film layer is prepared on the third photoresist layer, then removes the third photoetching
Glue-line and third metal film layer thereon retain the third metal film layer being filled in photoresist groove, to prepare
MEMS oscillator bonding pad (31), third pad (33) and output interconnecting lead (32) between the two.
8. a kind of temperature control vibrating isolation system based on SOI-MEMS, which is characterized in that including encapsulating housing and be encapsulated in the encapsulation
Shell is intracorporal such as the described in any item temperature control vibration-isolating platforms of claim 1-7.
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| CN109077520B (en) * | 2018-09-13 | 2021-01-29 | 温州大学 | Local resonance phononic crystal structure and vibration reduction bed plate using same |
| CN111386000B (en) * | 2018-12-28 | 2021-08-31 | 财团法人工业技术研究院 | Micro-electromechanical heating device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114599A (en) * | 2006-07-28 | 2008-01-30 | 中芯国际集成电路制造(上海)有限公司 | Method for making embedded resistor in semiconductor wafer |
| CN104811138A (en) * | 2014-01-24 | 2015-07-29 | 加高电子股份有限公司 | Temperature compensated oscillator and control method thereof |
| CN106164661A (en) * | 2014-03-05 | 2016-11-23 | 剑桥Cmos传感器有限公司 | Semiconductor equipment based on CMOS on micro-hotplate and manufacture method thereof |
| CN106788316A (en) * | 2015-11-25 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | Pressure resistance type Oven Controlled Oscillator and preparation method thereof |
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| US20120305542A1 (en) * | 2011-06-01 | 2012-12-06 | Imec | Oven Controlled MEMS Oscillator Device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114599A (en) * | 2006-07-28 | 2008-01-30 | 中芯国际集成电路制造(上海)有限公司 | Method for making embedded resistor in semiconductor wafer |
| CN104811138A (en) * | 2014-01-24 | 2015-07-29 | 加高电子股份有限公司 | Temperature compensated oscillator and control method thereof |
| CN106164661A (en) * | 2014-03-05 | 2016-11-23 | 剑桥Cmos传感器有限公司 | Semiconductor equipment based on CMOS on micro-hotplate and manufacture method thereof |
| CN106788316A (en) * | 2015-11-25 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | Pressure resistance type Oven Controlled Oscillator and preparation method thereof |
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