CN206302569U - The integrating device of MEMS microphone and environmental sensor - Google Patents
The integrating device of MEMS microphone and environmental sensor Download PDFInfo
- Publication number
- CN206302569U CN206302569U CN201621261137.3U CN201621261137U CN206302569U CN 206302569 U CN206302569 U CN 206302569U CN 201621261137 U CN201621261137 U CN 201621261137U CN 206302569 U CN206302569 U CN 206302569U
- Authority
- CN
- China
- Prior art keywords
- bottom electrode
- electrode
- substrate
- integrating device
- environmental sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007613 environmental effect Effects 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
The utility model discloses a kind of MEMS microphone and the integrating device of environmental sensor, the first bottom electrode, vibrating diaphragm, first Top electrode of microphone are disposed with substrate, the second bottom electrode being additionally provided with over the substrate and the second bottom electrode top and the second environmentally sensitive Top electrode being supported on by insulation division, second bottom electrode and the second Top electrode constitute environmental sensor capacitor arrangement.Integrating device of the present utility model, the capacitance structure of the capacitance structure of MEMS microphone, environmental sensor is integrated on the same substrate, this is just integrated on the same chip by microphone and environmental sensor, the integrated level of MEMS microphone and environmental sensor is improve, the size of whole encapsulating structure can be substantially reduced;And MEMS microphone and environmental sensor can be produced simultaneously on substrate, improve the efficiency of production.
Description
Technical field
The utility model is related to sensor field, more particularly, to a kind of MEMS microphone and the collection of environmental sensor
Into device.
Background technology
In recent years, with the development of science and technology, the volume of the electronic product such as mobile phone, notebook computer is constantly reducing,
And people, to the performance requirement of these portable electronic products also more and more higher, this requires matched electronic component
Volume must also reduce therewith.
Sensor has been commonly utilized in mobile phone, notebook computer or the electronic product such as wearable as measurement device
On.In existing process structure, pressure sensor and MEMS microphone are encapsulated in two independent monomeric forms respectively
On pcb board, the series of process such as DB, WB are then carried out, the size of this packing forms is larger, be unfavorable for being produced in consumer electronics
Product application.Current problem is, the packaging technology of each sensor comparative maturity, technological ability already close to the limit, it is difficult to
Requirement further according to system manufacturer further reduces the size of chip.
Utility model content
A purpose of the present utility model is to provide the new skill of a kind of MEMS microphone and the integrating device of environmental sensor
Art scheme.
According to first aspect of the present utility model, there is provided the integrating device of a kind of MEMS microphone and environmental sensor,
Including substrate, the first bottom electrode, vibrating diaphragm, first Top electrode of microphone are disposed with over the substrate, under described first
Supported by insulation division between electrode, vibrating diaphragm, the first Top electrode;First bottom electrode, vibrating diaphragm, the first Top electrode constitute difference
The microphone capacitor structure of fraction, is provided with the back of the body chamber being correspondingly arranged with the first bottom electrode on the substrate;In the substrate
On be additionally provided with the second bottom electrode and electricity on the second bottom electrode top and environmentally sensitive second be supported on by insulation division
Pole, the cavity formed between second Top electrode and the second bottom electrode is seal cavity, on second bottom electrode and second
Electrode constitutes environmental sensor capacitor arrangement;Wherein, first Top electrode, the second Top electrode use identical material one
Body formed, first bottom electrode, the second bottom electrode are integrally formed using identical material.
Alternatively, the first via is provided with first Top electrode, or/and is provided with the first bottom electrode
Two vias.
Alternatively, the 3rd via is provided with the vibrating diaphragm.
Alternatively, first bottom electrode, the first insulating barrier is additionally provided between the second bottom electrode and substrate.
Alternatively, ASIC circuit is additionally provided with over the substrate, and the ASIC circuit is arranged on and second is located on substrate
Position below bottom electrode.
Alternatively, also including for the electric signal of microphone capacitor structure, environmental sensor capacitor arrangement to be introduced
The conductive part of ASIC circuit.
Alternatively, the insulation division includes the second insulating barrier being supported between the first Top electrode, vibrating diaphragm, and is supported on
The 3rd insulating barrier between vibrating diaphragm and the first bottom electrode, and second insulating barrier, the 3rd insulating barrier be supported on second jointly
Between electrode, the second bottom electrode.
Alternatively, first bottom electrode, the second bottom electrode are bonded on substrate by the first insulating barrier, and the described 3rd is exhausted
The lower end of edge layer is bonded on the first bottom electrode, the second bottom electrode.
Alternatively, the environmental sensor is pressure sensor or temperature sensor or humidity sensor.
Integrating device of the present utility model, the capacitance structure of the capacitance structure of MEMS microphone, environmental sensor is integrated
On the same substrate, this is just integrated on the same chip by microphone and environmental sensor, improve MEMS microphone and
The integrated level of environmental sensor, can substantially reduce the size of whole encapsulating structure;And can simultaneously be produced on substrate
MEMS microphone and environmental sensor, improve the efficiency of production.
Inventor of the present utility model has found that in the prior art, pressure sensor and MEMS microphone are respectively with two
Independent monomeric form is encapsulated on pcb board, then carries out the series of process such as DB, WB, the size of this packing forms compared with
Greatly, it is unfavorable in consumer electronics product application.Therefore, the technical assignment or to be solved that the utility model to be realized
Technical problem be it is that those skilled in the art never expect or it is not expected that, therefore the utility model is a kind of new technology
Scheme.
By referring to the drawings to the detailed description of exemplary embodiment of the present utility model, it is of the present utility model its
Its feature and its advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing for being combined in the description and constituting a part for specification shows embodiment of the present utility model, and
And together with its explanation for explaining principle of the present utility model.
Fig. 1 is the profile of the utility model integrating device.
Fig. 2 to Fig. 8 is the manufacturing process flow diagram of the utility model integrating device.
Specific embodiment
Describe various exemplary embodiments of the present utility model in detail now with reference to accompanying drawing.It should be noted that:Unless another
Illustrate outward, the part and the positioned opposite of step, numerical expression and numerical value for otherwise illustrating in these embodiments are not limited
Make scope of the present utility model.
The description only actually at least one exemplary embodiment is illustrative below, never as to this practicality
New and its application or any limitation for using.
May be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as a part for specification.
In all examples shown here and discussion, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that:Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then it need not be further discussed in subsequent accompanying drawing.
In order to reduce the overall dimensions of encapsulation, the utility model provides the collection of a kind of MEMS microphone and environmental sensor
Into device, it includes substrate 1, and the upper end of the substrate 1 is provided with MEMS microphone capacitance structure and environmental sensor electricity
Hold structure so that can be integrated on the same chip by MEMS microphone and environmental sensor.
Environmental sensor of the present utility model can be that pressure sensor, temperature sensor, humidity sensor etc. are used to examine
Sensor of surrounding environment etc. is surveyed, its sensitive electrode is to change with external environment the sensitive membrane material of corresponding deformation occurs, this
Belong to the common knowledge of those skilled in the art, no longer illustrate herein.
With reference to Fig. 1, specifically, integrating device of the present utility model is disposed with the of microphone on the substrate 1
One bottom electrode 3a, vibrating diaphragm 5a, the first Top electrode 7a, the first bottom electrode 3a, between vibrating diaphragm 5a, the first Top electrode 7a by exhausted
Edge is supported.Substrate of the present utility model 1 can use silicon substrate material, the first bottom electrode 3a, vibrating diaphragm 5a, electricity on first
Pole 7a can be made from material well-known to those skilled in the art, for example, can select the monocrystalline of individual layer or MULTILAYER COMPOSITE
Silicon, polycrystalline silicon material etc..Wherein in order to ensure the insulation between the first bottom electrode 3a and substrate 1, in the first bottom electrode 3a
The first insulating barrier 2a is additionally provided between substrate 1, first insulating barrier 2a can use silica or art technology
Other materials known to personnel.
Above-mentioned insulation division includes the second insulating barrier 6a being supported between the first Top electrode 7a, vibrating diaphragm 5a, and support
The 3rd insulating barrier 4a between vibrating diaphragm 5a and the first bottom electrode 3a;The first Top electrode 7a is supported by the second insulating barrier 6a
On vibrating diaphragm 5a, vibrating diaphragm 5a is supported on the first bottom electrode 3a by the 3rd insulating barrier 4a, thereby may be ensured that the first Top electrode
There is certain interval, the first Top electrode 7a, the vibrating diaphragm for making between 7a and vibrating diaphragm 5a, between vibrating diaphragm 5a and the first bottom electrode 3a
5a, the first bottom electrode 3a may be constructed plate condenser structure.
Specifically, the first Top electrode 7a and vibrating diaphragm 5a constitute the first plate condenser structure, the vibrating diaphragm 5a with
First bottom electrode 3a constitutes the second plate condenser structure, the first plate condenser structure, the second plate condenser structure
The sensitive membrane of a public microphone so that the first plate condenser structure forms differential capacitance with the second plate condenser structure
Device structure, it is possible thereby to suppress the noise of microphone, improves the precision of microphone signal.The action of MEMS microphone capacitance structure
Principle belongs to the common knowledge of those skilled in the art, is no longer repeated herein.
Certainly, it is corresponding with the first bottom electrode 3a on the substrate 1 in order that the capacitance structure of MEMS microphone plays a role
Position be provided with the back of the body chamber 1a so that first bottom electrode 3a can be suspended at the back of the body chamber 1a top, this belongs to art technology
The common knowledge of personnel, no longer illustrates at this to it.
Microphone of the present utility model, can pattern to the first Top electrode 7a, with the shape on the first Top electrode 7a
Into there is the first via 70a, the sound in the external world is allowd by the first Top electrode 7a by first via 70a and is acted on
On the vibrating diaphragm 5a between the first Top electrode 7a and the first bottom electrode 3a, so that vibrating diaphragm 5a plays its function.Or, can be with
First bottom electrode 3a is patterned, to form the second via 30a on the first bottom electrode 3a, second is turned on by this
Hole 30a allows the sound in the external world by the first bottom electrode 3a and acts on positioned at the first Top electrode 7a and the first bottom electrode 3a
Between vibrating diaphragm 5a on so that vibrating diaphragm 5a plays its function.Certainly, for a person skilled in the art, can be first
The first via 70a, the second via 30a are respectively provided with Top electrode 7a, the first bottom electrode 3a, this can not only realize sound
Entrance, but also can with balanced microphone capacitor structure with the external world air pressure, to ensure the sensitivity of vibrating diaphragm 5a.
The utility model one preferred embodiment in, be provided with the 3rd via 50a on the vibrating diaphragm 5a, should
3rd via 50a can be combined together with first, second via, realize equal with extraneous air pressure in capacitor arrangement
Weighing apparatus, and the vibration frequency of vibrating diaphragm 5a can also be adjusted by setting the 3rd via 50a in vibrating diaphragm 5a, to meet the need of design
Ask.
Integrating device of the present utility model, is additionally provided with the second bottom electrode 3b and by insulation division on the substrate 1
The second Top electrode 7b above the second bottom electrode 3b is supported on, specifically, by the between the second bottom electrode 3b and substrate 1
One insulating barrier 2a carries out insulation protection, and the second Top electrode 7b can be supported on by the second insulating barrier 6a, the 3rd insulating barrier 4a
On the second bottom electrode 3b so that there is certain gap between the second Top electrode 7b and the second bottom electrode 3b, the two composition
The plate condenser structure of environmental sensor.
Second Top electrode 7b is integrally formed with the first Top electrode 7a using identical material, under the second bottom electrode 3b and first
Electrode 3a is integrally formed using identical material so that can on substrate 1 make microphone, environmental sensor structure simultaneously.
The second Top electrode 7b uses environmentally sensitive material, such as when environmental sensor of the present utility model is pressure sensor
When, the second Top electrode 7b is selected to pressure-sensitive material, when the second Top electrode 7b is subject to extraneous pressure, the second Top electrode
7b deforms, so as to change the distance between the second Top electrode 7b and the second bottom electrode 3b, the electric signal for most changing at last
Output.Wherein, the cavity 9b for being formed between the second Top electrode 7b and the second bottom electrode 3b is the cavity of sealing, and this belongs to this
The common knowledge of art personnel, no longer illustrates herein.
Integrating device of the present utility model, the capacitance structure of the capacitance structure of MEMS microphone, environmental sensor is integrated
On the same substrate, this is just integrated on the same chip by microphone and environmental sensor, improve MEMS microphone and
The integrated level of environmental sensor, can substantially reduce the size of whole encapsulating structure;And can simultaneously be produced on substrate
MEMS microphone and environmental sensor, improve the efficiency of production.
The utility model one preferred embodiment in, ASIC circuit 8 is also previously provided with the substrate 1,
The ASIC circuit 8 is arranged on substrate 1 position being located at below the second bottom electrode 3b so that ASIC circuit 8 can be with substrate 1
Back of the body chamber 1a stagger.
Integrating device of the present utility model, also including for by microphone capacitor structure, environmental sensor capacitor knot
The electric signal of structure introduces the conductive part (view is not provided) of ASIC circuit 8, for example can by way of deposition, etching conductive layer shape
Into connection ASIC circuit 8 and microphone capacitor structure, the conductive part of environmental sensor capacitor arrangement, such that it is able to by Mike
Wind-powered electricity generation structure of container, the electric signal of environmental sensor capacitor arrangement output are transferred to be processed in ASIC circuit 8.
Due to foring ASIC circuit 8 on substrate 1 in advance, in order to protect ASIC circuit 8 without damage, the collection is being made
When into device, the first bottom electrode 3a, the second bottom electrode 3b can be bonded on substrate 1 by the first insulating barrier 2a,
The lower end of the 3rd insulating barrier 4a is linked together with the first bottom electrode 3a, the second bottom electrode 3b by way of being bonded, by
This can be avoided the damage that high temperature brings to ASIC circuit 8.
The utility model additionally provides the manufacture method of a kind of MEMS microphone and the integrating device of environmental sensor, including
Following steps:
A) upper electrode layer 7 is provided, with reference to Fig. 2, the upper electrode layer 7 can use monocrystalline silicon material, on upper electrode layer 7
The via 70a of the first Top electrode is set positioned at the region of microphone, and quantity, shape, the size of the first via 70a are according to reality
Border demand is selected, and is no longer illustrated herein;
B) the second insulating barrier 6a is deposited on upper electrode layer 7, with reference to Fig. 3, second insulating barrier 6a is filled in the first conducting
In the 70a of hole, and it is covered in the upper surface of whole upper electrode layer 7;In the disposed thereon vibrating diaphragm layer 5 of the second insulating barrier 6a, now may be used
Performed etching with to the vibrating diaphragm layer 5, define the figure of microphone diaphragm 5a;
C) continue to deposit the 3rd insulating barrier 4a in the top of vibrating diaphragm layer 5, with reference to Fig. 4;The of etching environment sensor region
Three insulating barrier 4a, vibrating diaphragm layer 5, the second insulating barrier 6a, to form cavity 9b, with reference to Fig. 5;By to environmental sensor region
Three insulating barrier 4a, vibrating diaphragm layer 5, the second insulating barrier 6a are performed etching, such that it is able to the upper electrode layer 7 of bottom is exposed, electricity on this
The position that pole layer 7 exposes can use as the second Top electrode 7b of environmental sensor;
Before this step, it is preferred that vibrating diaphragm layer 5 is performed etching, the 3rd via 50a is formed, is being shaken again afterwards
Continue to deposit the 3rd insulating barrier 4a in the top of film layer 5;
D) substrate 1 and lower electrode layer 3 are provided, lower electrode layer 3 are bonded on substrate 1 by the first insulating barrier 2a, ginseng
Fig. 6 is examined, for example can be by the way of silicon-silicon bond conjunction, this belongs to the common knowledge of those skilled in the art;In lower electrode layer 3
The upper region positioned at microphone sets the second via 30a of the first bottom electrode, with reference to Fig. 7;The quantity of the second via 30a,
Shape, size are selected according to the actual requirements, are no longer illustrated herein;
E) the 3rd insulating barrier 4a is bonded together with lower electrode layer 3, with reference to Fig. 8;
F) reduction processing is carried out to upper electrode layer 7, upper electrode layer 7 is thinned to predetermined thickness, with reference to Fig. 8;Now go up
The portion of electrode layer 7 seals cavity 9b, and the position of upper electrode layer 7 constitutes electricity on the second of environmental sensor
Pole 7a;
G) it is pointed to the first insulating barrier 2a of the first bottom electrode 3a lower positions, substrate 1 to perform etching, to form back of the body chamber
1a, so that the first bottom electrode 3a can be suspended at the top of back of the body chamber 1a;
H) the second insulating barrier 6a, the 3rd insulating barrier 4a to microphone area corrode, and to be formed and discharge Mike
First bottom electrode 3a of wind, vibrating diaphragm 5a, the first Top electrode 7a, so as to obtain integrating device of the present utility model, with reference to Fig. 1;This
The common knowledge for belonging to those skilled in the art by corroding the technique of release is planted, is no longer illustrated herein.
Although being described in detail to some specific embodiments of the present utility model by example, this area
It is to be understood by the skilled artisans that example above is merely to illustrate, rather than in order to limit scope of the present utility model.This
Field it is to be understood by the skilled artisans that can be in the case where scope and spirit of the present utility model not be departed from, to above example
Modify.Scope of the present utility model is defined by the following claims.
Claims (9)
1. the integrating device of a kind of MEMS microphone and environmental sensor, it is characterised in that:Including substrate (1), in the substrate
(1) the first bottom electrode (3a), vibrating diaphragm (5a), first Top electrode (7a) of microphone, first bottom electrode are disposed with
Supported by insulation division between (3a), vibrating diaphragm (5a), the first Top electrode (7a);First bottom electrode (3a), vibrating diaphragm (5a),
One Top electrode (7a) constitutes the microphone capacitor structure of differential type, is provided with and the first bottom electrode on the substrate (1)
The back of the body chamber (1a) that (3a) is correspondingly arranged;The second bottom electrode (3b) is additionally provided with the substrate (1) and by insulation division branch
Support in the second bottom electrode (3b) top and environmentally sensitive the second Top electrode (7b), under second Top electrode (7b) and second
The cavity (9b) formed between electrode (3b) is seal cavity, and second bottom electrode (3b) constitutes with the second Top electrode (7b)
Environmental sensor capacitor arrangement;Wherein, first Top electrode (7a), the second Top electrode (7b) use identical material integrally
Shaping, first bottom electrode (3a), the second bottom electrode (3b) are integrally formed using identical material.
2. integrating device according to claim 1, it is characterised in that:First is provided with first Top electrode (7a)
Via (70a), or/and the second via (30a) is provided with the first bottom electrode (3a).
3. integrating device according to claim 2, it is characterised in that:The 3rd via is provided with the vibrating diaphragm (5a)
(50a)。
4. integrating device according to claim 1, it is characterised in that:First bottom electrode (3a), the second bottom electrode
The first insulating barrier (2a) is additionally provided between (3b) and substrate (1).
5. integrating device according to claim 4, it is characterised in that:ASIC circuit is additionally provided with the substrate (1)
(8), the ASIC circuit (8) is arranged on substrate (1) position being located at below the second bottom electrode (3b).
6. integrating device according to claim 5, it is characterised in that:Also include being used for microphone capacitor structure, ring
The electric signal of border sensor capacitor structure introduces the conductive part of ASIC circuit (8).
7. integrating device according to claim 4, it is characterised in that:The insulation division includes being supported on the first Top electrode
The second insulating barrier (6a) between (7a), vibrating diaphragm (5a), and be supported between vibrating diaphragm (5a) and the first bottom electrode (3a)
Three insulating barriers (4a), and second insulating barrier (6a), the 3rd insulating barrier (4a) are supported on the second Top electrode (7b), second jointly
Between bottom electrode (3b).
8. integrating device according to claim 7, it is characterised in that:First bottom electrode (3a), the second bottom electrode
(3b) is bonded on substrate (1) by the first insulating barrier (2a), and the lower end of the 3rd insulating barrier (4a) is bonded in first time electricity
On pole (3a), the second bottom electrode (3b).
9. the integrating device according to any one of claim 1 to 8, it is characterised in that:The environmental sensor is passed for pressure
Sensor or temperature sensor or humidity sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621261137.3U CN206302569U (en) | 2016-11-21 | 2016-11-21 | The integrating device of MEMS microphone and environmental sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621261137.3U CN206302569U (en) | 2016-11-21 | 2016-11-21 | The integrating device of MEMS microphone and environmental sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206302569U true CN206302569U (en) | 2017-07-04 |
Family
ID=59212195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201621261137.3U Active CN206302569U (en) | 2016-11-21 | 2016-11-21 | The integrating device of MEMS microphone and environmental sensor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206302569U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106535071A (en) * | 2016-11-21 | 2017-03-22 | 歌尔股份有限公司 | Integrated apparatus of MEMS microphone and environment sensor and manufacture method thereof |
WO2020151140A1 (en) * | 2019-01-23 | 2020-07-30 | 东莞泉声电子有限公司 | Electret capacitor microphone with small noise coefficient and manufacturing method thereof |
-
2016
- 2016-11-21 CN CN201621261137.3U patent/CN206302569U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106535071A (en) * | 2016-11-21 | 2017-03-22 | 歌尔股份有限公司 | Integrated apparatus of MEMS microphone and environment sensor and manufacture method thereof |
WO2020151140A1 (en) * | 2019-01-23 | 2020-07-30 | 东莞泉声电子有限公司 | Electret capacitor microphone with small noise coefficient and manufacturing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106535071A (en) | Integrated apparatus of MEMS microphone and environment sensor and manufacture method thereof | |
CN104891418B (en) | MEMS pressure sensor, MEMS inertial sensor integrated morphology | |
EP3249952B1 (en) | Integrated structure of mems microphone and pressure sensor, and manufacturing method thereof | |
CN105307092B (en) | MEMS microphone, the integrated morphology of environmental sensor and manufacture method | |
US6732588B1 (en) | Pressure transducer | |
EP1219136B1 (en) | A pressure transducer | |
JP4459498B2 (en) | Silicon-based sensor system | |
JP4768205B2 (en) | Micromachined absolute pressure sensor | |
EP2619536B1 (en) | Microelectromechanical pressure sensor including reference capacitor | |
TWI504279B (en) | Mems acoustic transducer and method for manufacturing the same | |
CN102685657B (en) | Part | |
CN109890748A (en) | MEMS microphone, its manufacturing method and electronic equipment | |
CN102156012A (en) | Micro electromechanical system (MEMS) pressure sensor and manufacturing method thereof | |
CN104716119B (en) | Package structure and method for fabricating the same | |
CN203279172U (en) | MEMS (Micro-Electro-Mechanical System) microphone | |
CN103552980A (en) | Wafer level packaging method for micro electromechanical system (MEMS) chip and single-chip micro-miniature type MEMS chip | |
CN206302569U (en) | The integrating device of MEMS microphone and environmental sensor | |
CN104378724A (en) | MEMS silicon microphone without large back acoustic cavity | |
TW201238879A (en) | MEMS sensing device and method for the same | |
CN103434999A (en) | Integrated manufacturing method for capacitance type temperature, humidity, air pressure and acceleration sensors based on anodic bonding of SOI (silicon on insulator) sheet silicon substrate | |
CN104394496B (en) | A kind of MEMS silicon microphone of small size high sensitivity high s/n ratio | |
CN204681590U (en) | MEMS microphone, pressure sensor integrated morphology | |
CN102730623B (en) | Micro electronmechanical sensing apparatus and preparation method thereof | |
CN207845152U (en) | Transducer module and electronic device | |
CN103347241B (en) | capacitor type silicon microphone chip and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191120 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co., Ltd Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Gore Co., Ltd. |
|
TR01 | Transfer of patent right |