CN106404038A - Humidity sensor - Google Patents
Humidity sensor Download PDFInfo
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- CN106404038A CN106404038A CN201610786656.XA CN201610786656A CN106404038A CN 106404038 A CN106404038 A CN 106404038A CN 201610786656 A CN201610786656 A CN 201610786656A CN 106404038 A CN106404038 A CN 106404038A
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- heating unit
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
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Abstract
The invention discloses a humidity sensor and belongs to the field of sensors. The humidity sensor disclosed in the invention comprises a base, a lower surface of the base is covered with a substrate layer, a heating device is arranged on an upper surface of the base, an upper surface of the heating device is provided with an output layer, and an upper surface of the output layer is covered with a humidity sensing layer. The humidity sensor disclosed in the invention is characterized in that surface temperature of the humidity sensor can constantly be in a certain temperature range while measurement characteristics of the humidity sensor are not affected, the surface temperature of the humidity sensor is enabled to be higher than ambient environment, and a surface of the humidity sensor can be prevented from condensation.
Description
Technical field
The present invention relates to a kind of sensor, particularly a kind of humidity sensor.
Background technology
Humidity sensor is widely used in various fields, such as Industry Control, medical production, agricultural planting, meteorological spy
Survey and food storage etc..The realization in these fields has great importance to the fast and accurately measurement of humidity.For humidity
Measurement, humidity sensor such as hair hygrograph, wet-and-dry bulb hygrometer, dew point hygrometer etc. of conventional principle are because volume is larger, cost
What height had even cannot be compatible with electronic information acquisition system containing mechanical part, can not meet being actually needed at this stage.
Existing humidity sensor material is mainly by porous silicon, porous ceramics.And porous silicon, anodised aluminium preparation technology
Relative complex, it is related to anode wet corrosion technique, be difficult to further reduces cost；Macromolecule with polyimides as representative
Compound-material is with its good humidity humidity sensing characteristic such as：The features such as long-time stability, reliability, easy processing, receives significant attention.
Saturated steam content due to humid air is directly proportional to air themperature.When air themperature is higher, water present in air steams
Gas is many；When air themperature is relatively low, present in air, vapor is few, even if knot also can be produced containing little vapor
Dew.So, even if humid air itself is not up to saturation state, when wetness sensor surface temperature is less than the saturation temperature of humid air
When, the vapor of body surface also can condense, and produces condensation.
Content of the invention
The goal of the invention of the present invention is：For above-mentioned problem, one kind is provided not affect humidity sensor survey
In the case of flow characteristic, by wetness sensor surface temperature constant within the scope of certain temperature, make wetness sensor surface temperature
Degree is higher than environment temperature, it is to avoid the humidity sensor of wetness sensor surface condensation.
The technical solution used in the present invention is as follows：
A kind of humidity sensor, including substrate, described substrate lower surface is covered with substrate layer, and described upper surface of substrate is provided with and adds
Hot device, described heater upper surface is provided with output layer, and described output layer upper surface is covered with humidity sensing layer.
Due to employing technique scheme, by heater just wetness sensor surface temperature constant in certain temperature
In the range of degree, wetness sensor surface temperature is made to be higher than environment temperature, it is to avoid wetness sensor surface condenses, thus ensureing humidity
The accuracy of sensor surface humidity sensing layer gathered data.
A kind of humidity sensor of the present invention, described heater is snakelike heater, and described heater includes three heating
Unit, be respectively linked in sequence heating unit one, heating unit two and heating unit three from left to right；Described heating unit one with
One end of heating unit three is connected with electrode, and the other end is connected with the two ends of heating unit two；Described heating unit one is along level side
To arrangement, described heating unit one and heating unit three specular, described heating unit two is arranged in a vertical direction.
Due to employing technique scheme, heating unit one and heating unit three in the heating of the both sides of humidity sensing layer so that
Even heat disperses, heating unit two vertically direction arrangement, it is to avoid air circulation between impact heating unit, and humidity sensing layer is adopted
Collection data impacts, and can effectively reduce sensor heat simultaneously and scatter and disappear.
The distance between a kind of humidity sensor of the present invention, described electrode and heating unit are 1.5mm, described heating list
The width l of unit one1Length l with heating unit two2Identical, length v of described heating unit one1, heating unit two width v2,
The knot of heating unit one is away from d1With the knot of heating unit two away from d2Meet below equation：
Due to employing technique scheme, when carrying out hot simulation analysis, environment temperature is chosen for+10～-10 DEG C.Work as ring
When border temperature is 0 DEG C, the maximum temperature of wetness sensor surface is 22.3 DEG C, and the mean temperature of effective humidity sensing surface is 22 DEG C,
Gap between big minimum temperature is 0.7 DEG C；When environment temperature is 10 DEG C, the maximum temperature on temperature sensor surface is 23.2
DEG C, the mean temperature of effective humidity sensing surface is 23 degrees Celsius, and the gap between minimax temperature is 0.4 DEG C；When environment temperature be-
When 10 DEG C, the maximum temperature on temperature sensor surface is 20.7 DEG C, and the mean temperature of effective humidity sensing surface is 20 DEG C, minimax temperature
Gap between degree is 1.6 DEG C.
A kind of humidity sensor of the present invention, the described electrode being connected with heating unit three is located at the upper left of heating unit one
Side, the described electrode being connected with heating unit one is located at the lower right of heating unit three.
A kind of humidity sensor of the present invention, is provided with diaphragm between described heater and output layer, and described output layer is in L
Type, the bottom of the vertical end face of described output layer is connected with diaphragm, between the horizontal end face of described output layer and diaphragm between be separated with
Communication Layer, described output layer is connected with some output ports.
Due to employing technique scheme, output layer is separated with heater by diaphragm, it is to avoid one can be entered
Step ensures that even heat is distributed in humidity sensing surface surface, avoids the overheated normal work to output layer of heater surfaces to cause shadow simultaneously
Ring.Output layer is made L-type and ensure that output layer is connected with diaphragm, it is to avoid Communication Layer is completely separated by output layer, simultaneously
Enable to humidity sensing layer and can touch the different humidity change of level height it is ensured that the accuracy of data.
A kind of humidity sensor of the present invention, described humidity sensing layer is L-shaped, and described humidity sensing layer is overlying on output layer upper surface, institute
State humidity sensing layer only located at heating unit two surface.
Due to employing technique scheme, humidity sensing layer is only on heating unit two surface it is ensured that the stablizing of the wet area of effective feeling
Property, further ensure the accuracy of humidity sensing layer gathered data when logical.
A kind of humidity sensor of the present invention, the thickness of described heating unit two lower substrates is less than heating unit two and adds
The thickness of hot cell three lower substrates.
Due to employing technique scheme, because the thickness in the wet area of effective feeling for the matrix is different, heat work(in identical
Under rate and environment temperature, humidity sensor temperature rise is higher, improves the efficiency of heating surface, reduces power consumption, the matrix thickness on both sides is relatively
Thickness, has certain heat-retaining, it is to avoid heat scatters and disappears rapidly.
A kind of humidity sensor of the present invention, described heater is made up of platinum, and described substrate layer is by nano-TiO2Film system
Become, described matrix is made up of silane alkynes block resin, the molecular formula of described silane alkynes block resin is ABA, wherein
Due to employing technique scheme, the thermal protection of heater, substrate layer and matrix and heat dispersion have preferably
Balance, under conditions of variation of ambient temperature, property is still stable, can obtain the heating effect of optimum.
A kind of humidity sensor of the present invention, described humidity sensing layer is by graphene oxide/nanometer Al2O3/ polyimides is made.
Due to employing technique scheme, not only there is excellent heat conductivility, can greatly reduce humidity sensing layer surface
The gap of temperature, meanwhile, has good dispersiveness and hydrophily.Because moisture is keeping graphene oxide/nanometer Al2O3/
Play a key effect in the layer structure of polyimides, moisture can be in oxygen and the moisture from the epoxy radicals crossing material surface
Reciprocation between hydrogen bond and in insertion material layer.Wherein, m (graphene oxide)：M (nanometer Al2O3)：M (polyimides)=
1:2.1:When 3, sensitivity is high, is in the range of 14%～91% in relative humidity, and humidity hysteresis is 3.7%, response time and recovery
Time is respectively 5s and 12s.
A kind of humidity sensor of the present invention, described diaphragm is by Na2O-SiC-SiO2Gel is made.
Due to employing technique scheme, the heat-conductive characteristic of diaphragm is good, has certain thermostatic effect.
In sum, due to employing technique scheme, the invention has the beneficial effects as follows：
1st, in the case of not affecting humidity sensor measurement characteristic, by wetness sensor surface temperature constant certain
In temperature range, wetness sensor surface temperature is made to be higher than environment temperature, it is to avoid wetness sensor surface condenses.
2nd, under identical heating power and environment temperature, humidity sensor temperature rise is higher, improves the efficiency of heating surface, reduces
Power consumption, the matrix thickness on both sides is thicker, has certain heat-retaining, it is to avoid heat scatters and disappears rapidly.
3rd, sensitivity is high, is in the range of 14%～91% in relative humidity, and humidity hysteresis is 3.7%, response time and recovery
Time is respectively 5s and 12s, and the accuracy of gathered data is high, and under conditions of variation of ambient temperature, property is still stable.
Brief description
Fig. 1 is a kind of overlooking the structure diagram of temperature sensor；
Fig. 2 is a kind of side structure schematic view of temperature sensor.
In figure marks：1 is substrate, and 2 is heater, and 3 is humidity sensing layer, and 4 is output port, and 5 is electrode, and 6 is output layer, 7
For substrate layer, 8 is Communication Layer, and 9 is diaphragm.
Specific embodiment
Below in conjunction with the accompanying drawings, the present invention is described in detail.
In order that the purpose of invention, technical scheme and advantage become more apparent, below in conjunction with drawings and Examples, to this
Invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, not
For limiting the present invention.
Embodiment 1
As shown in Figure 1 to Figure 2, a kind of humidity sensor, including substrate 1, the thickness of substrate 1 is 400 μm, substrate 1 following table
Face is covered with substrate layer 7, and substrate 1 upper surface is provided with heater 2, and heater 2 upper surface is provided with output layer 6, and output layer upper surface is covered
There is humidity sensing layer 3.Heater 2 is snakelike heater, and heater 2 includes three heating units, is respectively linked in sequence from left to right
Heating unit one, heating unit two and heating unit three；Heating unit one is connected with electrode 5 with one end of heating unit three, another
End is connected with the two ends of heating unit two；Heating unit one is arranged in the horizontal direction, heating unit one and heating unit three mirror image
Symmetrically, heating unit two is arranged in a vertical direction, and heater 2 and electrode 5 adopt photoetching process and magnetron sputtering to prepare in substrate
Surface.The distance between electrode 5 and heating unit are 1.5mm, the width l of heating unit one1Length l with heating unit two2Phase
With length v of heating unit one1, heating unit two width v2, the knot of heating unit one is away from d1With the knot of heating unit two away from d2
Meet below equation：Heating unit three is with heating unit one specular, its length, width
Degree, knot are away from all identical with heating unit one.The electrode being connected with heating unit three is located at the upper left side of heating unit one, with heating
The electrode that unit one is connected is located at the lower right of heating unit three.It is provided with diaphragm 8, output layer between heater 2 and output layer 6
6 is L-shaped, and the bottom of the vertical end face of output layer 6 is connected with diaphragm 8, between the horizontal end face of output layer 6 and diaphragm 9 between be separated with
Communication Layer 8, output layer 6 is connected with some output ports 4.Humidity sensing layer 3 is L-shaped, and humidity sensing layer 3 is overlying on output layer 6 upper surface, humidity sensing layer
3 only located at heating unit two surface.The thickness of heating unit two lower substrates 1 is less than below heating unit two and heating unit three
The thickness of substrate 1.
Heater 2 is made up of platinum, and substrate layer 7 is by nano-TiO2Film is made, and matrix 1 is made up of silane alkynes block resin,
Silane alkynes block resin molecular formula is ABA, wherein
.Humidity sensing layer 3 is by graphene oxide/nanometer Al2O3/ polyimides is made, wherein, m (graphene oxide)：M (nanometer
Al2O3)：M (polyimides)=1:2.1:3.Diaphragm 8 is by Na2O-SiC-SiO2Gel is made, wherein, n (Na+)：n(C4+)：n
(Si4+)=3：1:2.5.
Embodiment 2
Silane alkynes block resin is prepared by the following method：
Add magnesium powder (6g, 0.25mol) in four-hole boiling flask, and oxolane (40ml), under nitrogen atmosphere, drip bromine second
Alkane (25.92g, 0.24mol), after causing success, is incubated (45 DEG C) 1h；Under ice-water bath drip between diacetylene-benzene (15.12g,
0.12mol), 67 DEG C of backflow 1h, drip the many siloxanes of dichloro (0.08mol) under ice-water bath thereto, and flow back 2h, obtains big list
Body RMgBr P1.Add magnesium powder (2.16g, 0.09mol) and oxolane (40ml) in four-hole boiling flask, under nitrogen atmosphere,
Dropping bromoethane (8.64g, 0.08mol), after causing success, is incubated (45 DEG C) 1h；Diacetylene-benzene between dripping under ice-water bath
(5.04g, 0.04mol), flow back 1h, drips dimethyldichlorosilane (7.74g, 0.06mol) under ice-water bath thereto, backflow
2h, obtains polymeric monomer chlorosilane P2.
By P2It is slowly dropped to P1Reaction system in.Drip off and be heated to reflux about 2h.Oxolane is evaporated off, and is cooled to room
Wen Hou, under ice-water bath cooling, adds the mixed solution of glacial acetic acid (3g) and toluene (100ml), drips 2% dilute hydrochloric acid solution
(72ml) until dividing liquid.It is washed to neutrality, add anhydrous sodium sulfate drying.Filter, decompression steams solvent, obtains block copolymerization
Thing, yield is about 91%.
Synthetic route is as follows：
Embodiment 3
Graphene oxide/nanometer Al2O3/ polyimides is prepared by the following method：
At ambient temperature, using ultrasonic cleaner, a certain proportion of nano-aluminum hydroxide and graphene oxide are distinguished
It is scattered in oxolane, also polyimides is dissolved in oxolane simultaneously, form uniform solution；First by the four of Graphene
Hydrogen tetrahydrofuran solution is added in the tetrahydrofuran solution of nano aluminium oxide, ultrasonication 1h, then by the tetrahydrochysene of polyimides
Tetrahydrofuran solution is added in above-mentioned mixed liquor, and stirring is lower to add tetraethyl orthosilicate and dibutyl tin laurate, and stirring is simultaneously ultrasonic
Process 1h, gained mixed solution is spun on interdigitated electrode structure, evaporation of solvent, cold curing is molded, and prepares oxygen
Graphite alkene/receive Al2O3/ polyimides finely dispersed humidity sensing layer film.
Embodiment 4
Na2O-SiC-SiO2Gel (n (Na+)：n(C4+)：n(Si4+)=3：1:2.5) it is prepared by the following method：
With ethanol as solvent, tetraethyl orthosilicate is dissolved in ethanol, adjusts pH=2 with the hydrochloric acid that concentration is 35%,
It is proportionally added into carborundum in solution, at a temperature of 20 DEG C, stirs 1h, in solution, add dimethyldiethoxysilane,
Continue stirring and react 1h under conditions of 20 DEG C, add caustic alcohol the most backward, then react 1h under conditions of 20 DEG C, stop stirring
Mix, place and be aged 5～7d at room temperature, obtain Na2O-SiC-SiO2Gel diaphragm.
Embodiment 5
A kind of humidity sensor of the present invention is also associated with segmented compensation unit, and segmented compensation unit includes PSO-BP nerve
Network error compensates.
PSO-BP Neural Networks Error Compensation comprises the following steps,
Step one, sets the relevant parameter of PSO-BP neutral net, goes out ingress 2, output node 1, hidden node 5
Individual, maximum iteration time is 1500, target error 1 × 10-6, learning rate 0.01, population scale is 40, and inertia weight is 1, its
Middle PSO algorithm needs the weight threshold total number optimizing to be：N=(m+1) × n+ (n+1) × t, m are input neuron number, n
For hidden neuron number, t is output layer neuron number, and the speed to particle and position carry out random initializtion；
Step 2, according to functionCalculating network output and sample desired output Error Absolute Value
Sum, in formula, k is learning sample, and y is the reality output of network, and J exports for sample；
Step 3, the fitness function value of each particle is compared with individual extreme value, if fitness function value is little,
Then this fitness function value becomes new individual extreme value；And new individual extreme value is compared with overall optimal adaptation angle value,
If new individual extreme value is little, as current colony's extreme value；
Step 4, according to formulaWithThe position of more new particle and speed, in formula, ω is inertia weight；K is current iteration number of times；V is
The speed of ion, X is the position of particle, c1And c2For Studying factors；
Step 5, judges whether global optimum's fitness value is secondary more than greatest iteration less than setting error or iterations
Number, if being unsatisfactory for condition, return to step three；If meeting condition, the BP god of the global optimum's particle position extremely optimum exporting
Through network weight threshold value；
Step 6, the neutral net according to corresponding to the weight threshold producing, calculate the error sum of squares of BP network, root
According to formula f (Xi)=E (Xi)-1Calculate each individual relevance grade, according to formula
The object function of calculating network, in formulaFor inputting the output valve of k-th output node during j-th training sample；pjkSchedule to last
The output valve hoped；N is training sample number；M is the neuron number of output layer, i=1, and 2 ..., L, L are population scale.
Embodiment 6
In humidity sensor, Communication Layer 8 includes RFID label tag, some humidity induction device compositions comprising RFID label tag
Humidity control system, humidity control system, some humidity sensor units connecting including signal, MCU1 controller, Ruo Ganfa
Emitter, main receiver, MCU2 controller and monitoring PC main frame；Described humidity sensor unit, including built-in active RFID tag
Humidity sensor apparatus, described humidity sensor apparatus gather humidity data, and value is stored in active RFID tag；Described
MCU1 controller, can be written and read to the RFID label tag of specific objective, and data be out to be temporarily stored in single-chip microcomputer internal memory；Described
Transmitter, can pass through radio frequency transmitter chip wirelessly transmitting data；Described main receiver, can receive the nothing of transmitter transmitting
Line transmission data；Described MCU2 controller, can control and transfer data to monitor in PC main frame by serial ports；Described monitoring PC
Main frame, can carry out showing to data, store and computing.
Described MCU1 controller includes deterministic process with the communication process of RFID label tag, and described deterministic process is connected with parallel connection
First matching process and memory matching process, described deterministic process following steps,
Step one, RFID label tag is waited for, and sends solicited message to MCU1 controller, judges whether to receive MCU1
The acknowledgement command that controller sends, if not receiving the acknowledgement command that MCU1 controller sends, continues to send solicited message, its
In, the distribution model in MCU1 controller isConstraints is xijIt is the value between label and controller, LijIt is the distance between label and controller；
Step 2, if RFID label tag timing receives the acknowledgement command that MCU1 controller sends, judges that RFID label tag is successfully sent out
Sending whether data times are more than four times, if being more than or equal to four times, entering memory matching process；If being less than four times, enter first
Matching process.
Described first matching process comprises the following steps,
Step one, RFID label tag sends data message to MCU1 controller, and MCU1 receives send feedback information after information；
Step 2, RFID label tag judges whether to receive feedback information；If RFID label tag receives feedback letter within a certain period of time
Breath then represents that data is successfully transmitted, and continues collection humidity data；If RFID label tag is to receive feedback information within a certain period of time,
Represent the unsuccessful transmission of data, continue to attempt to send data.
Described memory matching process comprises the following steps,
Step one, RFID label tag sends data message to MCU1 controller；
Step 2, continues collection humidity data after being sent completely.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of humidity sensor it is characterised in that：Including substrate (1), described substrate (1) lower surface is covered with substrate layer (7), institute
State substrate (1) upper surface and be provided with heater (2), described heater (2) upper surface is provided with output layer (6), described output layer upper table
Face is covered with humidity sensing layer (3).
2. as claimed in claim 1 a kind of humidity sensor it is characterised in that：Described heater (2) is snakelike heater, institute
State heater (2) include three heating units, be respectively linked in sequence heating unit one from left to right, heating unit two and heating
Unit three；One end of described heating unit one and heating unit three is connected with electrode (5), the two ends phase of the other end and heating unit two
Even；Described heating unit one is arranged in the horizontal direction, described heating unit one and heating unit three specular, described heating list
Unit two is arranged in a vertical direction.
3. as claimed in claim 2 a kind of humidity sensor it is characterised in that：Described electrode (5) is and heating unit between
Distance is 1.5mm, the width l of described heating unit one1Length l with heating unit two2Identical, the length of described heating unit one
Degree v1, heating unit two width v2, the knot of heating unit one is away from d1With the knot of heating unit two away from d2Meet below equation：
4. as claimed in claim 2 or claim 3 a kind of humidity sensor it is characterised in that：The described electricity being connected with heating unit three
Pole is located at the upper left side of heating unit one, and the described electrode being connected with heating unit one is located at the lower right of heating unit three.
5. as claimed in claim 4 a kind of humidity sensor it is characterised in that：Between described heater (2) and output layer (6)
It is provided with diaphragm (8), described output layer (6) is L-shaped, the bottom of the vertical end face of described output layer (6) is connected with diaphragm (8),
It is separated with Communication Layer (8), described output layer (6) is connected with some outputs between the horizontal end face of described output layer (6) and diaphragm (9)
Port (4).
6. as claimed in claim 5 a kind of humidity sensor it is characterised in that：Described humidity sensing layer (3) is L-shaped, and described sense is wet
Layer (3) is overlying on output layer (6) upper surface, and described humidity sensing layer (3) is only located at heating unit two surface.
7. as claimed in claim 6 a kind of humidity sensor it is characterised in that：Described heating unit two lower substrates (1)
Thickness is less than the thickness of heating unit two and heating unit three lower substrates (1).
8. a kind of humidity sensor as described in claim 1 or 2 or 3 it is characterised in that：Described heater (2) is made up of platinum,
Described substrate layer (7) is by nano-TiO2Film is made, and described matrix (1) is made up of silane alkynes block resin, and described silane alkynes is embedding
Section molecular resin formula is ABA, wherein
9. as claimed in claim 8 a kind of humidity sensor it is characterised in that：Described humidity sensing layer (3) is by graphene oxide/receive
Rice Al2O3/ polyimides is made.
10. a kind of humidity sensor as described in claim 5 or 6 or 7 it is characterised in that：Described diaphragm (8) is by Na2O-
SiC-SiO2Gel is made.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610786656.XA CN106404038A (en) | 2016-08-31 | 2016-08-31 | Humidity sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610786656.XA CN106404038A (en) | 2016-08-31 | 2016-08-31 | Humidity sensor |
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Cited By (1)
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