CN105486728A - Capacitive humidity sensor and manufacturing method thereof - Google Patents

Capacitive humidity sensor and manufacturing method thereof Download PDF

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Publication number
CN105486728A
CN105486728A CN201510856143.7A CN201510856143A CN105486728A CN 105486728 A CN105486728 A CN 105486728A CN 201510856143 A CN201510856143 A CN 201510856143A CN 105486728 A CN105486728 A CN 105486728A
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sensing element
electrode layer
layer
humidity sensor
humidity
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CN105486728B (en
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张绍达
陈宇龙
邓杨
李晓辉
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Zhang Shaoda
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Shenzhen Meisi Xianrui Electronic Co Ltd
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Abstract

The present invention specifically discloses a capacitive humidity sensor and a manufacturing method thereof, the capacitive humidity sensor comprises at least a first sensing member, a second sensing member, a third sensing member and a substrate, the sensing members are separately fixedly arranged on the surface of the substrate, the first sensing member comprises a heating electrode layer, an insulating layer, a first electrode layer, a second electrode layer and a moisture sensitive layer; the heating electrode layer of the first sensing member is arranged on the surface of the substrate in an overlaying manner, the insulating layer is arranged on the outer surface of the heating electrode layer in the overlaying manner, and extends to the surface of the substrate, the first electrode layer, the moisture sensitive layer and the second electrode layer are successively arranged on the outer surface of the insulating layer in the overlaying manner in the direction from the substrate to the insulating layer, the surface of the second electrode layer is provided with a through hole communicating the moisture sensitive layer; compared with the first sensing member, the second sensing member and the third sensing member do not include a heating electrode layer, and the surface of a second electrode layer of the third sensing member is not provided with a through hole. The capacitive humidity sensor is simple in structure, various layers are solidly contacted, poor contact or falling-off is less prone to occur, the electrode parasitic resistance can be reduced, and the sensor low temperature performance can be enhanced.

Description

Capacitance type humidity sensor and manufacture method thereof
Technical field
The present invention relates to humidity sensor technical field, particularly relate to a kind of capacitance type humidity sensor and manufacture method thereof.
Background technology
Humidity sensor be a kind of can by determine the change of the electrical property that humidity sensitive material causes due to moisture detect accurately humidity change equipment, can be widely used in automobile, medicine equipment, air cleaning system, automatically cooling/heating systems, household electrical appliances, mobile device etc., to maintain the humidity of various equipment/system in optimum condition.Humidity sensor in the market can be divided into electric resistance moisture sensor and capacitance type humidity sensor, wherein, electric resistance moisture sensor causes the change of resistance to measure humidity based on humidity change, this type humidity sensor is widely used, mainly because electric resistance moisture sensor has very large advantage relative to capacitance type humidity sensor in price.But in recent years, with the form manufacture of single-chip on a semiconductor substrate, the capacitance type humidity sensor ratio resistance formula humidity sensor that therefore may be able to obtain has more competitive power in price to capacitance type humidity sensor.
In addition, relative resistance formula humidity sensor, capacitance type humidity sensor can present higher reliability, and can present more linear sensor characteristics and can bear the impact of low temperature, therefore, capacitance type humidity sensor can as capacitor type device.The polymkeric substance that the humidity-sensitive material of this capacitor type device is specific inductive capacity along with the change of moisture changes or pottery.Also the humidity sensitive layer namely for sensing humidity may reside in device inside, and the specific inductive capacity of humidity-sensitive layer can change by during humidity-sensitive layer at moisture, the change of specific inductive capacity causes the change of electric capacity, is determined the level of humidity by the change of electric capacity.
Humidity sensitive material covers on interdigital electrode by the U.S. No. 3916367 patent disclosure, is formed and measures layer.Although the capacitance type humidity sensor technique of this tiling interdigitated electrode structure is simple, be easy to metering circuit integrated, its capacitance is less, there is the shortcoming that measurement sensistivity is low.
The U.S. No. 4164868 patent disclosure humidity sensitive material is filled between upper/lower electrode, the capacitance type humidity sensor of this sandwich structure, in order to ensure the response speed of sensor, top electrode adopts the thin film (about 10nm) having certain water permeability, this easily causes resistance parasitic larger in the top electrode of sensor, can cause adverse effect to the performance of sensor.
The U.S. No. 6690569 patent disclosure inserts heating element in the potential electrode of humidity, contributes to promoting the performance of humidity sensor when low temperature like this and reduces humidity hysteresis.But such humidity sensor can not realize temperature compensation.
Summary of the invention
Tiling interdigital capacitive humidity sensor for above-mentioned existence has that capacitance is little, sensitivity is low; There is the very thin dead resistance that causes of electrode and need the shortcomings such as temperature compensation in sandwich style, provides a kind of capacitance type humidity sensor sensor and manufacture method thereof.
In order to achieve the above object, the embodiment of the present invention adopts following technical scheme:
A kind of capacitance type humidity sensor, comprise at least one first sensor parts, the second sensor element, the 3rd sensor element and substrate, described sensor element homogeneous phase is from the similar face being fixedly arranged on described substrate;
Wherein, described first sensor parts comprise heating electrode layer, insulation course, the first electrode layer, humidity sensitive layer and the second electrode lay with geometric configuration;
The described heating electrode of described first sensor is stacked is located at described substrate surface,
Described insulation is stacked is located at described heating electrode layer outside surface, and extends on described substrate surface; Described first electrode layer, humidity sensitive layer and the second electrode lay are located at described insulation course outside surface by described substrate is folded successively to described insulation course direction; Described the second electrode lay surface is provided with the through hole communicated with described humidity sensitive layer;
Relative to described first sensing element, second, third sensing element described does not comprise described heating electrode layer, and the described the second electrode lay surface of described 3rd sensing element is without through hole.
And accordingly, the manufacture method of above-mentioned capacitance type humidity sensor, at least comprises the following steps:
Step S01. forms the heating electrode layer of the first sensing element at substrate surface, and carries out geometric configuration etching processing to described heating electrode layer;
Step S02. forms insulation course at described substrate surface and described heating electrode layer outside surface;
Step S03. described insulation course outside surface formed respectively be spaced the first sensing element, the second sensing element, the 3rd sensing element the first electrode layer;
Step S04. forms the humidity sensitive layer of described first sensing element, the second sensing element, the 3rd sensing element respectively in the described first electrode layer outside surface correspondence of described first, second, third sensing element;
Step S05. forms the second electrode lay of first, second part described, the 3rd sensing element respectively in the described first electrode layer outside surface correspondence of described first, second, third sensing element;
Step S06. forms the through hole communicated with described humidity sensitive layer on the second electrode lay of described first sensing element, the second sensing element.
The capacitance type humidity sensor that the invention described above embodiment provides, have structure simple, each interlayer contact firmly, not easily comes in contact the features such as bad; The design of the second electrode lay through hole, reduces the possibility of electrode dead resistance; The design of at least one first sensor parts, the second sensor element and the 3rd sensor element, realize by compensate mode, reduce temperature drift and eliminate other types common-mode signal interference; And the heating electrode layer of part sensor component design, sensor performance at low ambient temperatures can be promoted.
The manufacture method of the capacitance type humidity sensor that the above embodiment of the present invention provides, there is the advantages such as technique is simple, easy and simple to handle, etching is accurate, good moldability, be applicable to large-scale production, the sensor of manufacture has that consistance is good, environmental suitability is strong and the feature such as the response time is short.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the front view of the capacitance type humidity sensor that the embodiment of the present invention provides;
Fig. 2 is the rear view of the capacitance type humidity sensor that the embodiment of the present invention provides;
Fig. 3 is the front view of the capacitance type humidity sensor that the embodiment of the present invention provides;
Fig. 4 is the right view of the capacitance type humidity sensor that the embodiment of the present invention provides;
Fig. 5 is the A-A cut-open view of the capacitance type humidity sensor that the embodiment of the present invention provides;
Fig. 6-14 is the manufacturing process schematic diagram of the capacitance type humidity sensor that the embodiment of the present invention provides;
Figure 15 is the capacity measurement result schematic diagram of the capacitance type humidity sensor that the embodiment of the present invention provides;
Figure 16 varies with temperature situation schematic diagram the capacitance type humidity sensor response time that the embodiment of the present invention provides;
Wherein, 1-substrate; 2-heating electrode layer; 3-insulation course; 4-first electrode layer; 5-humidity sensitive layer; 6-the second electrode lay, 61-through hole; D, c-first sensing element; B-second sensing element; A-the 3rd sensing element.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
It should be noted that, when element is called as " being fixed on " or " being arranged at " another element, it can directly on another element or may there is centering elements simultaneously.When an element is known as " being connected to " another element, it can be directly connected to another element or may there is centering elements simultaneously.
Also it should be noted that, the orientation term such as left and right, upper and lower in the embodiment of the present invention, is only relative concept or be reference with the normal operating condition of product each other, and should not be regarded as have restrictive.
As shown in Figures 1 to 5, the capacitance type humidity sensor that the embodiment of the present invention provides, comprise at least one first sensing element, the second sensing element, the 3rd sensing element and substrate 1, described sensing element homogeneous phase is from the similar face being fixedly arranged on described substrate 1;
Above-mentioned first sensing element, the second sensing element, the 3rd sensing element are separated tiling mutually and are fixedly installed on the similar face of substrate 1, namely, two of a substrate 1 relative wide face can be called A face, B face, the so A face that is laid in that is separated mutually of the first sensing element, the second sensing element, the 3rd sensing element or B face, the position that three parts contact with substrate 1 should be coplanar.The first described sensing element, the second sensing element, the 3rd sensing element linearly (or in " one " font) can be arranged in substrate surface, also can the arrangement in sphere of movements for the elephants type.When this capacitance type humidity sensor comprises two the first sensing elements, in order to make this capacitance type humidity sensor compact conformation, all sensing elements are the arrangement of sphere of movements for the elephants type in the layout on substrate 1 surface.Embodiment provided by the invention comprises two the first sensing elements, the second sensing element, the 3rd sensing element, is namely arrangement in sphere of movements for the elephants type, can be described as example to technical scheme of the present invention.
In any embodiment, substrate 1 can select the monocrystalline silicon piece of 2-12 inch.When making to make capacitance type humidity sensor, each layer is smooth and thickness even, and the two-sided or single-sided polishing of best substrate 1, polished surface sets firmly the first sensing element, the second sensing element, the 3rd sensing element.For the consideration of easy making process, the thickness of substrate 1 can be 300-1000 μm; Preferably 500 μm, this thickness can ensure easy making process, avoids again substrate 1 because of other equipment of blocked up and inconvenient implantation.
In any embodiment, the first sensing element comprises heating electrode layer 2, insulation course 3, first electrode layer 4, humidity sensitive layer 5, the second electrode lay 6.
Wherein, heating electrode layer 2 is stacked at substrate 1 surface by deposition, and has geometric configuration.Particularly, can heat the first sensing element uniformly to make heating electrode layer 2, the geometric configuration of heating electrode layer 2 is that pulse waveform, serrate or wave are linear, and the edge extending to substrate 1 surface is electrically connected for the external world, the epitaxial part of heating electrode layer 2, can extend to same edge, also can to different edge along extending, in the embodiment of the present invention, shown in Fig. 1 is to different edge along situation about extending.
As preferably, adopt metallic aluminium as the material of heating electrode layer 2, the thickness of described heating electrode layer 2 is 0.3-0.6 μm.
In any embodiment, insulation course 3 is stacked at the outside surface of heating electrode layer 2, and extends folded surface of establishing the substrate 1 do not covered to heating electrode layer 2.
As preferably, adopt monox or silicon nitride material as heat insulation layer 3, the thickness of described monox or silicon nitride material is at 0.5-1.5 μm, insulation course 3 is too thick, is not easy to Fast Heating, easily add thermo-lag, cross thin, easily occur that insulativity is bad, the measurement accuracy of insulation course electrode when impact is measured; If insulation course is too thin, the first electrode layer 4 may with heating electrode layer 2 conducting, thus cause the capacitance cannot measuring humidity sensitive layer 5.
In any embodiment, the first electrode layer 4 also claims humidity lower electrode layer.First electrode layer 4 is stacked at the outside surface of insulation course 3, and through over etching, make the first electrode layer 4 form the figuratum shape of tool, and the first electrode layer 4 has the pin exposed to extend to the surface of substrate 1, conveniently realizes being electrically connected with miscellaneous part.
As preferably, adopt aluminum to form the first electrode layer 4, and the thickness of the first electrode layer 4 formed is 0.5-1.5 μm.
In any embodiment, humidity sensitive layer 5 is stacked at the outside surface of the first electrode layer 4.Preferred even glue mode forms humidity sensitive layer 5.
As preferably, adopt polyamic acid solution as the raw material of humidity sensitive layer 5, by the surface of equal for polyamic acid solution glue in the first electrode layer 4, then heating makes its imidization.In order to make humidity sensitive layer 5 have good sensitivity, its thickness is preferably 1-10 μm.
In any embodiment, the second electrode lay 6 also claims humidity top electrode layer.The second electrode lay 6 is stacked at the outside surface of humidity sensitive layer 5, and through over etching, form the figuratum shape of tool, and etch equally distributed through hole 61 thereon, humidity sensitive layer 5 is made to realize exposing by through hole 61, air containing moisture content can enter humidity sensitive layer through this through hole, and then affects the specific inductive capacity of humidity sensitive layer, the change causing final electric capacity and then the measurement realized humidity.It should be noted that the second electrode lay 6 has the pin exposed to extend to the surface of substrate 1, conveniently realize being electrically connected with miscellaneous part.
As preferably, as preferably, adopt aluminum to form the second electrode lay 6, and the thickness of the second electrode lay 6 formed is 0.5-1.5 μm.
In any embodiment, compared with the first sensing element, second, third sensing element does not comprise heating electrode layer 2, and the second electrode lay 6 of the 3rd sensing element does not offer through hole 61, and all the other are all identical with the first sensing element structure.In one embodiment, the processing of processing and first sensing element of second, third sensing element is synchronously carried out.
For Figure 14, the course of work (or principle of work) of the capacitance type humidity sensor that the embodiment of the present invention provides is described:
1) error is eliminated
This step main cause is because the presoma polyamic acid of humidity-sensitive material cannot ensure that the chemical parameters such as the product molecular weight distribution of different batches are completely the same, and spin coating and amidated process also can introduce certain error, can cause like this under other parameters and the immovable situation of technique, the capacitance of the humidity sensor of different batches has certain deviation, can cause drift or the deviation of measurement like this.
Except the capacitance of the humidity-sensitive material of humidity sensor changes except the impact by humidity simultaneously, also may be subject to the such as impact such as temperature, pressure and change, as shown in figure 14, by deducting the capacitance of a with the capacitance of b, impact outside humidity can be eliminated to greatest extent to the change of humidity-sensitive material capacitance, and then promote the precision measured.
2) heat, switch
Because polyimide is as the characteristic of humidity-sensitive material, when temperature is lower and humidity is higher, (such as temperature lower than 20 DEG C humidity higher than 75%RH), sensor surface easily condenses on the one hand, and the through performance of hydrone also can be affected on the one hand in addition.Traditional disposal route places heating electrode under sensor, when temperature is opened lower than during certain limit, but heating electrode is opened to sensor temperature stablizes the needs long time, if like this at the very fast environment of humidity change, so sensor temperature also unstabilized during this period of time will error is very large even cannot reading.The present invention adopts the form adding sensor, such as sensor c and sensor d, for temperature variation occasion faster, open the heating electrode of sensor c or sensor d in advance, make the temperature stabilization of sensor c or sensor d, when environment temperature is normal, the electric capacity of sensor b is adopted to carry out computing environment humidity, work as variation of ambient temperature, when being low to moderate certain value, adopt the electric capacity of sensor c or sensor d to carry out computing environment humidity.Selected by the reading of sensor capacitance like this, the real-time measurement to ambient humidity can be realized.
The situation that the electric capacity reference value that Figure 15 shows sensor in manufacturing process changes, but by the electric capacity of b being deducted the electric capacity of a, can obtain close to consistent capacitance.
The capacitance type humidity sensor that the embodiment of the present invention provides, have structure simple, each interlayer contact firmly, not easily comes in contact the features such as bad; The design of the second electrode lay through hole, reduces the possibility of electrode dead resistance; The design of at least one first sensor parts, the second sensor element and the 3rd sensor element, realize by compensate mode, reduce temperature drift and eliminate other types common-mode signal interference; And the heating electrode layer of part sensor component design, sensor performance at low ambient temperatures can be promoted.
The embodiment of the present invention, on the basis providing capacitance type humidity sensor, additionally provides a kind of manufacture method of this sensor.Manufacture process of the present invention is explained, better capacitance type humidity sensor of the present invention to be described below by specific embodiment.
In one embodiment, as shown in Fig. 6 to Figure 14, the manufacture process that the present invention comprises the capacitance type humidity sensor of two the first sensing elements, second sensing element and the 3rd sensing element is:
(1) cleaning treatment of substrate 1.If the non-polishing of substrate 1, can carry out polishing to wherein one side, or polishing is all carried out in two sides, specifically as shown in Figure 6;
(2) deposition processes of heating electrode layer 2.A polished surface of substrate 2 deposits layer of metal aluminium lamination; After carrying out positive glue whirl coating again, front baking photoetching development, post-drying, then carry out reactive ion etching, removing photoresist, form the heating electrode layer 2 with geometric configuration, specifically as shown in Figure 7;
(3) deposition processes of insulation course 3.Heating electrode layer 2 outside surface and not substrate 1 surface deposition one deck silicon oxide layer of covering by heating electrode layer 2, this silicon oxide layer is insulation course 3, specifically as shown in Figure 8, and insulation course 3 is processed, form the insulation course with geometric configuration, heating electrode layer 2 part is exposed, and specifically as shown in Figure 9, the finished product of the capacitance type humidity sensor that the embodiment of the present invention provides is all schematic diagram that insulation course 3 has geometric configuration;
The deposition processes of (4) first electrode layers 4.At outside deposition one deck aluminium lamination of insulation course 3, through positive glue whirl coating, front baking photoetching development, after dry technique, after carrying out reactive ion etching, removing photoresist, form first electrode layer 4 with geometric configuration, specifically as shown in Figure 10,11;
(5) formation processing of humidity sensitive layer 5.Adopt the mode of even glue to adhere to one deck polyamic acid solution at the outside surface of the first electrode layer 4, then heating makes its imidization, forms humidity sensitive layer 5, specifically as shown in figure 12;
(6) deposition processes of the second electrode lay 6.At outside deposition one deck aluminium lamination of humidity sensitive layer 5, through positive glue whirl coating, front baking photoetching development, after dry technique, after carrying out reactive ion etching, removing photoresist, form the second electrode lay 6 with geometric configuration, and the second electrode lay 6 that first, second sensing element is formed is carried out to the etching of through hole 61, specifically as shown in Figure 13,14.
Wherein, (3) adopt Low Pressure Chemical Vapor Deposition to deposit; (2), (4), (6) adopt magnetron sputtering method to deposit.
Figure 16 is the sensor response time variation with temperature schematic diagram that the above embodiment of the present invention manufactures.As we know from the figure, very fast lower than 20 DEG C of hydraulic performance declines, lower than 10 DEG C, performance is close to unavailable.Therefore, all when low-temperature region carries out Humidity Detection, be necessary directly to read the sensor c through heating electrode heating and sensor d.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement or improvement etc., all should be included within protection scope of the present invention.

Claims (9)

1. a capacitance type humidity sensor, is characterized in that: comprise at least one first sensing element, the second sensing element, the 3rd sensing element and substrate, described sensing element homogeneous phase is from the similar face being fixedly arranged on described substrate;
Wherein, described first sensing element comprises heating electrode layer, insulation course, the first electrode layer, humidity sensitive layer and the second electrode lay with geometric configuration;
The described heating electrode of described first sensing element is stacked is located at described substrate surface, and described insulation is stacked is located at described heating electrode layer outside surface, and extends on described substrate surface; Described first electrode layer, humidity sensitive layer and the second electrode lay are located at described insulation course outside surface by described substrate is folded successively to described insulation course direction; Described the second electrode lay surface is provided with the through hole communicated with described humidity sensitive layer;
Relative to described first sensing element, second, third sensing element described does not comprise described heating electrode layer, and the described the second electrode lay surface of described 3rd sensing element is without through hole.
2. humidity sensor as claimed in claim 1, is characterized in that: described humidity sensitive layer is the polyamide acid layer of imidization, and described humidity sensitive layer thickness is 1 ~ 10 μm.
3. the humidity sensor as described in as arbitrary in claim 1-2, is characterized in that: described heating electrode layer is metal level; Described geometric configuration is that pulse waveform or serrate or wave are linear.
4. the humidity sensor as described in as arbitrary in claim 1-2, is characterized in that: described insulation course is silicon oxide layer or silicon nitride layer.
5. the humidity sensor as described in as arbitrary in claim 1-2, is characterized in that: described first electrode layer and/or described the second electrode lay are metal level, is especially aluminium lamination or platinum layer or layer gold.
6. the humidity sensor as described in as arbitrary in claim 1-2, is characterized in that: described substrate is silicon.
7. a manufacture method for the humidity sensor as described in as arbitrary in claim 1-6, at least comprises the following steps:
Step S01. forms the heating electrode layer of the first sensing element at substrate surface, and carries out geometric configuration etching processing to described heating electrode layer;
Step S02. forms insulation course at described substrate surface and described heating electrode layer outside surface;
Step S03. described insulation course outside surface formed respectively be spaced the first sensing element, the second sensing element, the 3rd sensing element the first electrode layer;
Step S04. forms the humidity sensitive layer of described first sensing element, the second sensing element, the 3rd sensing element respectively in the described first electrode layer outside surface correspondence of described first, second, third sensing element;
Step S05. forms the second electrode lay of first, second part described, the 3rd sensing element respectively in the described first electrode layer outside surface correspondence of described first, second, third sensing element;
Step S06. forms the through hole communicated with described humidity sensitive layer on the second electrode lay of described first sensing element, the second sensing element.
8. the manufacture method of humidity sensor as claimed in claim 7, is characterized in that: the generation type of described insulation course is low-pressure chemical vapor deposition; The generation type of described heating electrode layer, described first electrode layer, the second electrode lay is magnetron sputtering.
9. the manufacture method of humidity sensor as claimed in claim 8, is characterized in that: the generation type of described heating electrode layer, the first electrode layer and the second electrode lay also comprises reactive ion etching.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107589155A (en) * 2017-09-12 2018-01-16 华南师范大学 A kind of capacitance type sensor and preparation method thereof
CN109690301A (en) * 2016-09-09 2019-04-26 北陆电气工业株式会社 Volumetric gas sensor
CN111879827A (en) * 2020-06-15 2020-11-03 上海集成电路研发中心有限公司 Flexible sensor structure and preparation method thereof
CN114858874A (en) * 2022-07-07 2022-08-05 苏州敏芯微电子技术股份有限公司 Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500940A (en) * 1982-12-21 1985-02-19 Vaisala Oy Capacitive humidity sensor and method for the manufacture of same
CN103792267A (en) * 2014-02-19 2014-05-14 苏州能斯达电子科技有限公司 Differential capacitive humidity sensor
CN104198545A (en) * 2014-08-20 2014-12-10 云南师范大学 Heating type humidity sensor for sonde and preparation method thereof as well as humidity detection circuit
CN104391014A (en) * 2014-12-03 2015-03-04 东南大学 Capacitive humidity sensor of interdigital sandwich structure
CN104391015A (en) * 2014-12-03 2015-03-04 东南大学 Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure
CN104422718A (en) * 2013-09-06 2015-03-18 美格纳半导体有限公司 Capacitive humidity sensor
CN104634832A (en) * 2015-02-28 2015-05-20 苏州工业园区纳米产业技术研究院有限公司 CMOS MEMS capacitance-type humidity sensor and preparation method thereof
CN105067682A (en) * 2015-08-19 2015-11-18 东南大学 Flexible capacitive humidity sensor and preparation method thereof
CN205280640U (en) * 2015-11-27 2016-06-01 深圳市美思先端电子有限公司 Capacitive humidity sensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500940A (en) * 1982-12-21 1985-02-19 Vaisala Oy Capacitive humidity sensor and method for the manufacture of same
CN104422718A (en) * 2013-09-06 2015-03-18 美格纳半导体有限公司 Capacitive humidity sensor
CN103792267A (en) * 2014-02-19 2014-05-14 苏州能斯达电子科技有限公司 Differential capacitive humidity sensor
CN104198545A (en) * 2014-08-20 2014-12-10 云南师范大学 Heating type humidity sensor for sonde and preparation method thereof as well as humidity detection circuit
CN104391014A (en) * 2014-12-03 2015-03-04 东南大学 Capacitive humidity sensor of interdigital sandwich structure
CN104391015A (en) * 2014-12-03 2015-03-04 东南大学 Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure
CN104634832A (en) * 2015-02-28 2015-05-20 苏州工业园区纳米产业技术研究院有限公司 CMOS MEMS capacitance-type humidity sensor and preparation method thereof
CN105067682A (en) * 2015-08-19 2015-11-18 东南大学 Flexible capacitive humidity sensor and preparation method thereof
CN205280640U (en) * 2015-11-27 2016-06-01 深圳市美思先端电子有限公司 Capacitive humidity sensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
F. HOSSEIN-BABAEI ET AL.: "Compensation for the drift-like terms caused by environmental fluctuations in the responses of chemoresistive gas sensors", 《SENSORS AND ACTUATORS B: CHEMICAL》 *
牛桂平 等: "高分子电容式湿度变送器补偿方法", 《传感器技术》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109690301A (en) * 2016-09-09 2019-04-26 北陆电气工业株式会社 Volumetric gas sensor
CN107589155A (en) * 2017-09-12 2018-01-16 华南师范大学 A kind of capacitance type sensor and preparation method thereof
WO2019052037A1 (en) * 2017-09-12 2019-03-21 深圳市国华光电科技有限公司 Capacitive sensor and preparation method therefor
CN111879827A (en) * 2020-06-15 2020-11-03 上海集成电路研发中心有限公司 Flexible sensor structure and preparation method thereof
CN114858874A (en) * 2022-07-07 2022-08-05 苏州敏芯微电子技术股份有限公司 Humidity sensing structure, humidity sensor and manufacturing method of humidity sensing structure

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