CN104391015A - Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure - Google Patents
Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure Download PDFInfo
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- CN104391015A CN104391015A CN201410724904.9A CN201410724904A CN104391015A CN 104391015 A CN104391015 A CN 104391015A CN 201410724904 A CN201410724904 A CN 201410724904A CN 104391015 A CN104391015 A CN 104391015A
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Abstract
The invention discloses a capacitive humidity sensor of an integrated ultrasonic structure and a preparation method of the capacitive humidity sensor of the integrated ultrasonic structure. The capacitive humidity sensor comprises an ultrasonic transducer structure and multiple humidity sensitive capacitor structures, wherein the humidity sensitive capacitor structures are arranged above the ultrasonic transducer structure; the ultrasonic transducer structure comprises a substrate, a piezoelectric material layer and an intermediate metal layer which are sequentially arranged from bottom to top; the humidity sensitive capacitor structures comprise insulating layers, interdigital electrodes, passivation layers and humidity sensitive material layers which are sequentially arranged from bottom to top; the insulating layers are arranged on the intermediate metal layer; a cavity is formed in the lower surface of the substrate by corrosion and is used for adjusting the thickness of the substrate and further adjusting the resonant frequency of the ultrasonic transducer structure. The ultrasonic transducer releases an ultrasonic signal under the action of an electric signal with a certain frequency, so that energy is obtained by water molecules, the movement rate is increased, and water molecules relatively fast diffuse or escape from humidity sensitive materials. Therefore, the response speed of the sensor is increased.
Description
Technical field
The present invention relates to capacitance type humidity sensor of a kind of integrated ultrasound structure and preparation method thereof, belong to micro-electromechanical technology.
Background technology
Humidity sensor is a kind of device measuring humidity, is widely used in the field such as meteorological research, commercial production.Because the speed of moisture movement is limited, when ambient humidity changes, measurement result change one period of response time of needs of sensor; And sensor returns stagnant existence, then there is harmful effect to the measuring accuracy of sensor.
In order to improve response characteristic and the hysteresis characteristic of sensor, the method usually adopted at present increases heating arrangement in sensor construction.Vaisala (exabyte) employs bending-type resistance in the product and heats humidity sensor.2006, Ching-Liang Dai (name) etc. devised the polysilicon resistance structure of grid dress, for heating the sensor construction of top.2009, the people such as Youngdeuk Kima proposed a kind of sensor construction, and heater circuit and sensitization capacitance are in same layer, and sensitization capacitance are enclosed in centre, heat from surrounding.But use the humidity sensor of heating arrangement, must experience heat temperature raising and normally could carry out moisture measurement after the process that cools, survey frequency affects by sensor temperature rate of change, haves much room for improvement.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides capacitance type humidity sensor of a kind of integrated ultrasound structure and preparation method thereof, utilization utilizes ultrasound structure to produce ultrasound wave, moisturize sub energy and rate of diffusion, improves response characteristic and the hysteresis characteristic of sensor.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A capacitance type humidity sensor for integrated ultrasound structure, comprise ultrasonic transducer structures and some humidity sensitive capacitance structures, humidity sensitive capacitance vibrational power flow is above ultrasonic transducer structures; Described ultrasonic transducer structures comprises the substrate, piezoelectric material layer and the intermediate metal layer that set gradually from the bottom to top, humidity sensitive capacitance structure comprises the insulation course, interdigital electrode, passivation layer and the humidity-sensitive material layer that set gradually from the bottom to top, insulation course is arranged on intermediate metal layer, interdigital electrode and passivation layer one_to_one corresponding, the insulation course of all humidity sensitive capacitance structures shares, and the humidity-sensitive material layer of all humidity sensitive capacitance structures shares; The lower surface of described substrate is formed by etching cavity, for regulating substrate thickness, and then regulates the resonance frequency of ultrasonic transducer structures.
A preparation method for the capacitance type humidity sensor of integrated ultrasound structure, comprises the steps:
(1) prepare heavily to mix silicon substrate, form cavity by back side corrosion at the lower surface of substrate;
(2) deposit one layer of piezo-electric material on substrate, and utilize photoetching and etching technics to make it graphical, form piezoelectric material layer;
(3) sputtering or evaporation layer of metal aluminium on piezoelectric material layer, and utilize photoetching and etching technics to make it graphical, form intermediate metal layer;
(4) deposit one deck monox utilize photoetching and etching technics to make it graphical on intermediate metal layer, forms insulation course 4;
(5) sputter on the insulating layer or evaporate layer of metal aluminium, and utilizing photoetching and etching technics to make it graphical, forming interdigital electrode;
(6) deposit one deck silicon nitride utilize photoetching and etching technics to make it graphical in interdigital electrode, forms passivation layer;
(7) deposit one deck polyimide over the passivation layer, and utilize photoetching and etching technics to make it graphical, form humidity-sensitive material layer.
Beneficial effect: capacitance type humidity sensor of integrated ultrasound structure provided by the invention and preparation method thereof, when electric signal to ultrasonic transducer structures effect certain frequency, ultrasonic signal can be discharged, this ultrasonic signal can make hydrone obtain energy, improve the movement rate of hydrone, make it spread or effusion layer by layer at humidity-sensitive material quickly, thus improve response speed and the hysteresis characteristic of capacitance type humidity sensor.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be illustrated in figure 1 a kind of capacitance type humidity sensor of integrated ultrasound structure, comprise ultrasonic transducer structures and some humidity sensitive capacitance structures, humidity sensitive capacitance vibrational power flow is above ultrasonic transducer structures; Described ultrasonic transducer structures comprises the substrate 1, piezoelectric material layer 2 and the intermediate metal layer 3 that set gradually from the bottom to top, humidity sensitive capacitance structure comprises the insulation course 4, interdigital electrode 5, passivation layer 6 and the humidity-sensitive material layer 7 that set gradually from the bottom to top, and insulation course 4 is arranged on intermediate metal layer 3; The lower surface of described substrate 1 is formed by etching cavity, for regulating substrate thickness, and then regulates the resonance frequency of ultrasonic transducer structures.
The preparation process of the capacitance type humidity sensor of above-mentioned integrated ultrasound structure is as follows:
(1) prepare heavily to mix silicon substrate 1, form cavity by back side corrosion at the lower surface of substrate 1;
(2) deposit one layer of piezo-electric material on substrate 1, and utilize photoetching and etching technics to make it graphical, form piezoelectric material layer 2;
(3) sputtering or evaporation layer of metal aluminium on piezoelectric material layer 2, and utilize photoetching and etching technics to make it graphical, form intermediate metal layer 3;
(4) deposit one deck monox utilize photoetching and etching technics to make it graphical on intermediate metal layer 3, forms insulation course 4;
(5) sputtering or evaporation layer of metal aluminium on insulation course 4, and utilize photoetching and etching technics to make it graphical, form interdigital electrode 5;
(6) deposit one deck silicon nitride utilize photoetching and etching technics to make it graphical in interdigital electrode 5, forms passivation layer 6;
(7) deposit one deck polyimide on passivation layer 6, and utilize photoetching and etching technics to make it graphical, form humidity-sensitive material layer 7.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (2)
1. a capacitance type humidity sensor for integrated ultrasound structure, is characterized in that: comprise ultrasonic transducer structures and some humidity sensitive capacitance structures, humidity sensitive capacitance vibrational power flow is above ultrasonic transducer structures; Described ultrasonic transducer structures comprises the substrate (1), piezoelectric material layer (2) and the intermediate metal layer (3) that set gradually from the bottom to top, humidity sensitive capacitance structure comprises the insulation course (4), interdigital electrode (5), passivation layer (6) and the humidity-sensitive material layer (7) that set gradually from the bottom to top, and insulation course (4) is arranged on intermediate metal layer (3); The lower surface of described substrate (1) is formed by etching cavity, for regulating substrate thickness, and then regulates the resonance frequency of ultrasonic transducer structures.
2. a preparation method for the capacitance type humidity sensor of integrated ultrasound structure, is characterized in that: comprise the steps:
(1) prepare heavily to mix silicon substrate (1), form cavity by back side corrosion at the lower surface of substrate (1);
(2) in upper deposit one layer of piezo-electric material of substrate (1), and utilize photoetching and etching technics to make it graphical, form piezoelectric material layer (2);
(3) at the upper sputtering of piezoelectric material layer (2) or evaporation layer of metal aluminium, and utilize photoetching and etching technics to make it graphical, form intermediate metal layer (3);
(4) go up deposit one deck monox at intermediate metal layer (3) and utilize photoetching and etching technics to make it graphical, forming insulation course (4);
(5) at the upper sputtering of insulation course (4) or evaporation layer of metal aluminium, and utilize photoetching and etching technics to make it graphical, form interdigital electrode (5);
(6) go up deposit one deck silicon nitride in interdigital electrode (5) and utilize photoetching and etching technics to make it graphical, forming passivation layer (6);
(7) at the upper deposit one deck polyimide of passivation layer (6), and utilize photoetching and etching technics to make it graphical, form humidity-sensitive material layer (7).
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105486728A (en) * | 2015-11-27 | 2016-04-13 | 深圳市美思先端电子有限公司 | Capacitive humidity sensor and manufacturing method thereof |
| CN106768050A (en) * | 2016-12-26 | 2017-05-31 | 上海集成电路研发中心有限公司 | A kind of single-chip high-accuracy temperature-humidity sensor |
| CN108140115A (en) * | 2015-10-14 | 2018-06-08 | 高通股份有限公司 | Integrated piezoelectricity micromachined ultrasonic transducer pixel and array |
| CN109613065A (en) * | 2018-11-16 | 2019-04-12 | 东南大学 | A kind of semiconductor humidity sensor and preparation method thereof |
| CN111044583A (en) * | 2019-11-27 | 2020-04-21 | 南通大学 | Humidity sensor chip |
| CN111579603A (en) * | 2020-05-09 | 2020-08-25 | 北京航空航天大学 | Silicon-based capacitive humidity sensor integrating heating control and ultrasonic vibration |
| AU2020256373B2 (en) * | 2020-01-07 | 2021-05-06 | Nantong University | Humidity sensor chip having three-electrode structure |
| WO2021109999A1 (en) * | 2019-12-04 | 2021-06-10 | 杭州未名信科科技有限公司 | Humidity sensor and manufacturing method therefor |
| CN112974198A (en) * | 2019-12-18 | 2021-06-18 | 京东方科技集团股份有限公司 | Capacitive micro-machined ultrasonic transducer unit, manufacturing method thereof and capacitive micro-machined ultrasonic transducer |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108140115A (en) * | 2015-10-14 | 2018-06-08 | 高通股份有限公司 | Integrated piezoelectricity micromachined ultrasonic transducer pixel and array |
| CN105486728B (en) * | 2015-11-27 | 2018-05-25 | 深圳市美思先端电子有限公司 | Capacitance type humidity sensor and its manufacturing method |
| CN105486728A (en) * | 2015-11-27 | 2016-04-13 | 深圳市美思先端电子有限公司 | Capacitive humidity sensor and manufacturing method thereof |
| CN106768050A (en) * | 2016-12-26 | 2017-05-31 | 上海集成电路研发中心有限公司 | A kind of single-chip high-accuracy temperature-humidity sensor |
| CN106768050B (en) * | 2016-12-26 | 2020-02-14 | 上海集成电路研发中心有限公司 | Single-chip high-precision temperature and humidity sensor |
| CN109613065B (en) * | 2018-11-16 | 2021-03-16 | 东南大学 | Semiconductor humidity sensor and preparation method thereof |
| CN109613065A (en) * | 2018-11-16 | 2019-04-12 | 东南大学 | A kind of semiconductor humidity sensor and preparation method thereof |
| CN111044583A (en) * | 2019-11-27 | 2020-04-21 | 南通大学 | Humidity sensor chip |
| CN111044583B (en) * | 2019-11-27 | 2021-07-06 | 南通大学 | Humidity sensor chip |
| WO2021109999A1 (en) * | 2019-12-04 | 2021-06-10 | 杭州未名信科科技有限公司 | Humidity sensor and manufacturing method therefor |
| CN112974198A (en) * | 2019-12-18 | 2021-06-18 | 京东方科技集团股份有限公司 | Capacitive micro-machined ultrasonic transducer unit, manufacturing method thereof and capacitive micro-machined ultrasonic transducer |
| CN112974198B (en) * | 2019-12-18 | 2022-07-26 | 京东方科技集团股份有限公司 | Capacitive micro-machined ultrasonic transducer unit, manufacturing method thereof and capacitive micro-machined ultrasonic transducer |
| AU2020256373B2 (en) * | 2020-01-07 | 2021-05-06 | Nantong University | Humidity sensor chip having three-electrode structure |
| CN111579603A (en) * | 2020-05-09 | 2020-08-25 | 北京航空航天大学 | Silicon-based capacitive humidity sensor integrating heating control and ultrasonic vibration |
| CN111579603B (en) * | 2020-05-09 | 2021-10-26 | 北京航空航天大学 | MEMS capacitive humidity sensor integrating heating control and ultrasonic vibration |
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