CN108185526A - The MEMS euthermic chips and its manufacturing method of a kind of integrated diode temperature sensor - Google Patents
The MEMS euthermic chips and its manufacturing method of a kind of integrated diode temperature sensor Download PDFInfo
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- CN108185526A CN108185526A CN201810004112.2A CN201810004112A CN108185526A CN 108185526 A CN108185526 A CN 108185526A CN 201810004112 A CN201810004112 A CN 201810004112A CN 108185526 A CN108185526 A CN 108185526A
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- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 17
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 22
- 239000003571 electronic cigarette Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000005357 flat glass Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 241000208125 Nicotiana Species 0.000 description 6
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 6
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 206010037660 Pyrexia Diseases 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 235000019504 cigarettes Nutrition 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000619 316 stainless steel Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 210000002345 respiratory system Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
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- Micromachines (AREA)
Abstract
The invention discloses a kind of MEMS euthermic chips of integrated diode temperature sensor, including：First substrate (1 1), in the form of sheets, front have the microcavity body (2) of concave；The centre bit of the microcavity body (2) is equipped with the micro through hole (3) through first substrate (1 1)；Second substrate (1 2), in the form of sheets, there is the miniflow channel array (4) perpendicular to its back side at its back side, and front center region is equipped with perpendicular to its positive porous structure (5), and the miniflow channel array (4) connects with porous structure (5)；Its front edge has metal lead wire pad (6)；Its front face surface has diode temperature sensor (7)；The front of first substrate (1 1) is together with the back adhesive of second substrate (1 2).The invention also discloses the preparation methods of the MEMS euthermic chips of the integrated diode temperature sensor.
Description
Technical field
The present invention relates to electronic cigarette technical field, more particularly to a kind of MEMS electronic cigarettes of integrated diode temperature sensor
Euthermic chip and its manufacturing method.
Background technology
Most commercially available electronic cigarettes use heating wire as heater element, and under power supply state, heating wire is converted by electric heating and produced
Raw high heat heating tobacco juice is allowed to be atomized.Due to the winding side of helical structure and oil-guiding element on it of heating wire in itself
Formula so that the phenomenon that localized hyperthermia inevitably occurs at work in heating wire.Tobacco juice ingredient, Oil Guide material are in the excessively high temperature of electronic cigarette
The lower variation that physicochemical property can occur of degree, it is possible to create harmful pyrolysis product；Under high temperature, some fragrance components in tobacco juice can quilt
It destroys, influences to inhale the rich of taste；The excessively high flue-gas temperature that atomization can also generated of electronic cigarette temperature is excessively high, may be to respiratory tract
It causes to damage；In the case of tobacco juice insufficient supply, excessively high temperature can also burn atomization core (paste core), generate burning, suction
Experience is deteriorated.
In order to improve disadvantages described above, in recent years, occurs temperature control technology in electronic cigarette.The basic principle of the temperature control technology
It is：Electronic cigarette temperature controlling chip is by reading the resistance of heating wire, to monitor heating wire temperature.Heating wire is substantially resistance wire,
When heating wire temperature increases, the Collision Number between heating wire internal metal ion increases therewith, and then the resistivity of metal can be with
Temperature change, it is associated by temperature-coefficient of electrical resistance between temperature and resistance value.Specifically, electronic cigarette is built-in with heating wire resistance value
Detection circuit allows user to like the maximum temperature of setting heating wire according to itself.The reference resistance of heating wire is surveyed at room temperature
It is fixed, to determine and the relevant correct temperature of benchmark resistance value, then, resistance value and application when being started by METHOD FOR CONTINUOUS DETERMINATION electronic cigarette
Resistance v. temperature formula estimates the operating temperature of electronic cigarette.By the special algorithm of temperature controlling chip, regulating cell output power,
Heating wire resistance value is made to be no more than and the corresponding calculated value of user's set temperature.Currently used temp controlled heating silk type mainly has
Nickel 200, titanium and 316 stainless steel wires etc..The advantage of the technology be heating wire will not overheat, will not dry combustion method, also while avoid cigarette
The overall experience and safety in utilization of electronic cigarette is substantially improved in the peculiar smell and harmful substance generated under the excessively high evaporating temperature of liquid.
At present, it is actually that corresponding temperature is conversed according to the resistance change of metal applied to " temperature control " of electronic cigarette
So as to fulfill so-called " temperature control ", finally still realized according to the resistance variations of heating wire.The temperature control mode is not logical
Excess temperature sensor detects temperature, but calculates the change in resistance of heating wire by electronic cigarette host chip to converse temperature
Information, so the temperature control of actually current electronic cigarette is using the change in resistance of heating wire as foundation, it is not with actual temperature
Come what is judged, as a result, the accuracy of temperature is directly related to the accuracy of resistance value, and the initial resistance value detected such as fruit chip is not allowed
Really, that would not be accurate according to the temperature that temperature-coefficient of electrical resistance calculates, if radix mistake, that entire result of calculation is also
Mistake.In addition, the temperature control mode still remains problems with：The resistance value of heating wire can only reflect whole temperature conditions,
When generation local temperature is excessively high, it is impossible to effectively monitoring；Secondly in use, heating wire can because high temperature ageing,
The reasons such as oxidation lead to the variation of resistance, and temperature measurement error can be caused increasing.
In numerous temp measuring methods, resistance temperature sensor (or thermometer resistor, usual abbreviation RTD) is most accurate side
One of method, and advantage of the film resistor temperature sensor compared to tradition RTD is highly sensitive and rapid thermal response, this is because its
Smaller size reduces the heat exchange between sensing element and environment.Metal platinum (Pt) is because of good response, the resistivity to heat
Highly linear positive correlation between temperature and long-term chemical durability at high temperature, and sensed as Thin film resistive temperature
The preferred material of device.At present, COMS (complementary metal oxide semiconductor) work can be used in most Pt film resistor temperature sensors
Skill or MEMS (MEMS) techniques are prepared on silicon or metal substrate.Using Pt particularly in MEMS device, allow
Manufacture when the temperature rises can have plastic deformation the structure of high resistance.
Another temperature sensor is fever diode, wherein, silicon p-n junction diode is most accurate temperature sensor,
According to the strong correlation of its forward bias and temperature, it can be used for temperature sensor.Since its thermometric is sensitive, accurate and measurement
It is absolute temperature, the compatibility within the scope of wide in range temperature there are simple voltage-temperature relationship, with integrated circuit technique
(particularly can be integrated in electronic device on same chip) and cheap manufacture cost and be widely used in temperature survey.
In high temperature application, silicon diode can provide Thermal feedback to accurately control the temperature of heater element (or slight fever device).In perseverance
When being operated under stream mode, silicon diode measures temperature range can be from -200 DEG C~850 DEG C.
Invention content
It is an object of the invention to solve the problems, such as that existing electronic cigarette temperature control technology exists, skill is processed using advanced MEMS
Art designs the MEMS electronic cigarettes euthermic chip and its manufacturing method of integrated temperature sensor.It is real by integrated temperature sensor
When accurately measure the temperature of MEMS euthermic chips, and coordinate external temperature controller, realize MEMS euthermic chips accurate control
System, makes tobacco juice uniform atomizing.
First aspect present invention discloses a kind of MEMS euthermic chips of integrated diode temperature sensor, including：
First substrate 1-1, in the form of sheets, front have the microcavity body 2 of concave；The centre bit of the microcavity body 2, which is equipped with, to be run through
The micro through hole 3 of the first substrate 1-1；
Second substrate 1-2, in the form of sheets, the back side have the miniflow channel array 4 perpendicular to its back side, and front center region is equipped with
Perpendicular to its positive porous structure 5, the miniflow channel array 4 is connected with porous structure 5；Its front edge has metal lead wire weldering
Disk 6；Its front face surface has diode temperature sensor 7；
The front of the first substrate 1-1 is together with the back adhesive of the second substrate 1-2.
Preferably, the depth of the microcavity body 2 is 1 millimeter to 5 millimeters；A diameter of 500 microns to 1 of the micro through hole 3
Millimeter.
Preferably, there is a metallic film in the front of the second substrate 1-2, the thickness of the metallic film for 200~
500nm；The material of the metallic film is Ti/Pt/Au.
Preferably, a diameter of 10 microns to 500 microns of the fluid channel of the miniflow channel array 4, the depth of the fluid channel
Spend 1/2~3/4 for the second substrate 1-2 height.
Preferably, the aperture of the porous structure 5 is 100 nanometers to 1000 nanometers.
Preferably, first substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is more than
10Ω·cm。
Preferably, second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is less than 0.01
Ω·cm。
Second aspect of the present invention discloses a kind of preparation method of the MEMS euthermic chips of integrated diode temperature sensor,
Include the following steps：
The preparation of first substrate 1-1：
(1) it is lithographically formed microcavity body figure in the front of the high resistant monocrystalline silicon piece of sheet glass or resistivity more than 10 Ω cm
Then shape is corroded using etchant solution and microcavity body；
(2) sheet glass to step (1) or the high resistant monocrystalline silicon piece back side carry out photoetching, then corrode using etchant solution
Through the sheet glass or the micro through hole of high resistant monocrystalline silicon piece；Obtain the first substrate 1-1；
The preparation of second substrate 1-2：
(a) it is lithographically formed fluid channel array of figure at the back side of the silicon chip of low-resistivity of the resistivity less than 0.01 Ω cm
Shape；
(b) back side of the low-resistivity silicon chip of step (a) is performed etching using deep reaction ion etching technique, is formed micro-
Runner array；
(c) using low-pressure chemical vapor deposition process to one layer of the front deposition of the low-resistivity silicon chip described in step (b)
Silicon nitride；
(d) photoetching is carried out to the front of the low-resistivity silicon chip described in step (c), is removed using reactive ion etching process
The exposed silicon nitride layer in middle part；
(e) using electrochemical corrosive process, to step (d), the front etch of obtained low-resistivity silicon chip goes out porous knot
Structure makes porous structure be connected with the miniflow channel array at the back side；
(f) n-type silicon film is made to step (e) front side of silicon wafer using LPCVD or sputtering technology；
(g) using the extra silicon thin film of reactive ion etching removal step (f)；
(h) local heavy doping is carried out to the silicon thin film of step (g), to form Ohmic contact；
(i) sputtered metal film makes diode lead and metal pad 6 using stripping technology, obtains diode temperature
Sensor 7；As described second substrate 1-2；
The preparation of the MEMS electronic cigarette euthermic chips of integrated diode temperature sensor:
The front of the first substrate 1-1 and the back side of the second substrate 1-2 are in close contact by (first), and work is closed by strong
Skill is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the integrated diode temperature
The MEMS euthermic chips of sensor.
Preferably, step (1) or the corrosive liquid described in (2), the wherein corrosive liquid of sheet glass are hydrofluoric acid solution, high resistant list
The corrosive liquid of crystal silicon chip is one of potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
Preferably, step (i) the sputtered metal film material is Ti/Pt/Au.
Preferably, the diode temperature sensor 7 is Schottky diode temperature sensor, including as substrate
N-type silicon film 9, the N-shaped heavily doped region 10 for collectively forming diode cathode and metal lead wire 12 and as diode cathode
Schottky contact electrode 11.
The beneficial outcomes of the present invention：
(1) a kind of MEMS euthermic chips of integrated diode temperature sensor of the invention are using integrated silicon diode temperature
Sensor measures the temperature of electronic cigarette euthermic chip in real time, first, avoiding overheating；Second is that it can be carried out according to user demand
Temperature is adjusted, so as to change atomization quantity.Temperature survey is accurate, and sensor life-time is long, reliable operation, effectively prevents existing electronics
The temperature survey of cigarette heater is inaccurate, heater aging leads to problems such as temperature detecting resistance constantly change；
(2) present invention can set one or more silicon diode temperature sensors, to chip surface according to actual needs
Temperature carries out distributed measurement, obtains the Temperature Distribution of chip different zones, and existing method can be avoided to lead to not measure fever
The problem of body local temperature.Heat utilization efficiency can be effectively improved, improves the atomizing effect of tobacco juice.
(3) preparation method of the invention is simple, and technological standards are appropriate for producing in batches.
Description of the drawings
Fig. 1 is the side sectional view of the MEMS euthermic chips of the integrated diode temperature sensor of the present invention；
Fig. 2 is the first side of substrate sectional view of the invention；
Fig. 3 the second side of substrate sectional views；
Fig. 4 the second substrate face vertical views；
Fig. 5 the second substrate back vertical views.
Reference numeral is：1-1, the first substrate；2nd, microcavity body；3rd, micro through hole；4th, fluid channel displays；5th, porous structure；6、
Metal pad；7th, diode temperature sensor；8th, silicon nitride layer；9th, n-type silicon film layer；10th, N-shaped heavily doped region；11st, Schottky
Contact electrode；12nd, metal lead wire.
Specific embodiment
A kind of MEMS euthermic chips of integrated diode temperature sensor of the present invention, including：
First substrate 1-1, in the form of sheets, front have the microcavity body 2 of concave；The centre bit of the microcavity body 2, which is equipped with, to be run through
The micro through hole 3 of the first substrate 1-1；
Second substrate 1-2, in the form of sheets, the back side have the miniflow channel array 4 perpendicular to its back side, and front center region is equipped with
Perpendicular to its positive porous structure 5, the miniflow channel array 4 is connected with porous structure 5；Its front edge has metal lead wire weldering
Disk 6；Its front face surface has diode temperature sensor 7；
The front of the first substrate 1-1 is together with the back adhesive of the second substrate 1-2.
The depth of the microcavity body 2 is 3 millimeters；A diameter of 750 microns of the micro through hole 3.
There is metallic film in the front of the second substrate 1-2, and the thickness of the metallic film is 300nm；The metal foil
The material of film is Ti/Pt/Au.
A diameter of 100 microns of the fluid channel of the miniflow channel array 4, the depth of the fluid channel is second substrate
The 1/2 of 1-2 height.
The aperture of the porous structure 5 is 500 nanometers.
First substrate is made of high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is 20 Ω cm.
Second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is 0.005 Ω cm.
The preparation method of the MEMS euthermic chips of a kind of integrated diode temperature sensor of the present invention, including following step
Suddenly：
The preparation of first substrate 1-1：
(1) microcavity volume graphic is lithographically formed in the front of high resistant monocrystalline silicon piece of the resistivity more than 20 Ω cm, then adopted
Corroded with etchant solution potassium hydroxide solution and microcavity body；
(2) photoetching is carried out to the high resistant monocrystalline silicon piece back side of step (1), then using the corruption of etchant solution potassium hydroxide solution
Lose the micro through hole through the high resistant monocrystalline silicon piece；Obtain the first substrate 1-1；
The preparation of second substrate 1-2：
(a) it is lithographically formed fluid channel array pattern at the back side of the silicon chip for the low-resistivity that resistivity is 0.005 Ω cm；
(b) back side of the low-resistivity silicon chip of step (a) is performed etching using deep reaction ion etching technique, is formed micro-
Runner array；
(c) using low-pressure chemical vapor deposition process to one layer of the front deposition of the low-resistivity silicon chip described in step (b)
Silicon nitride；
(d) photoetching is carried out to the front of the low-resistivity silicon chip described in step (c), is removed using reactive ion etching process
The exposed silicon nitride layer in middle part；
(e) using electrochemical corrosive process, to step (d), the front etch of obtained low-resistivity silicon chip goes out porous knot
Structure makes porous structure be connected with the miniflow channel array at the back side；
(f) n-type silicon film is made to step (e) front side of silicon wafer using LPCVD or sputtering technology；
(g) using the extra silicon thin film of reactive ion etching removal step (f)；
(h) local heavy doping is carried out to the silicon thin film of step (g), to form Ohmic contact；
(i) sputtered metal film, material Ti/Pt/Au make diode lead and metal pad 6 using stripping technology,
Obtain diode temperature sensor 7；The diode temperature sensor 7 is Schottky diode temperature sensor, including making
N-type silicon film (9) for substrate, the N-shaped heavily doped region 10 for collectively forming diode cathode and metal lead wire 12 and as two
The Schottky contact electrode 11 of pole pipe anode；As described second substrate 1-2.
The preparation of the MEMS electronic cigarette euthermic chips of integrated diode temperature sensor:
The front of the first substrate 1-1 and the back side of the second substrate 1-2 are in close contact by (first), and work is closed by strong
Skill is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the integrated diode temperature
The MEMS euthermic chips of sensor.
Claims (11)
1. a kind of MEMS euthermic chips of integrated diode temperature sensor, which is characterized in that including：
First substrate (1-1), in the form of sheets, front have the microcavity body (2) of concave；The centre bit of the microcavity body (2), which is equipped with, to be passed through
Wear the micro through hole (3) of first substrate (1-1)；
Second substrate (1-2), in the form of sheets, the back side have the miniflow channel array (4) perpendicular to its back side, and front center region is equipped with
Perpendicular to its positive porous structure (5), the miniflow channel array (4) connects with porous structure (5)；Its front edge has metal
Lead pad (6)；Its front face surface has diode temperature sensor (7)；
The front of first substrate (1-1) is together with the back adhesive of second substrate (1-2).
2. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described micro-
The depth of cavity (2) is 1 millimeter to 5 millimeters；A diameter of 500 microns to 1 millimeter of the micro through hole (3).
3. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described
There is metallic film in the front of two substrates (1-2), and the thickness of the metallic film is 200~500nm；The material of the metallic film
For Ti/Pt/Au.
4. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described micro-
A diameter of 10 microns to 500 microns of the fluid channel of runner array (4), the depth of the fluid channel is the second substrate (1-
2) the 1/2~3/4 of height.
5. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described more
The aperture of pore structure (5) is 100 nanometers to 1000 nanometers.
6. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described
One substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is more than 10 Ω cm.
7. the MEMS euthermic chips of integrated diode temperature sensor according to claim 1, which is characterized in that described
Two substrates are made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is less than 0.01 Ω cm.
8. a kind of preparation method of the MEMS euthermic chips of integrated diode temperature sensor, which is characterized in that including following step
Suddenly：
The preparation of first substrate (1-1)：
(1) microcavity volume graphic is lithographically formed in the front of the high resistant monocrystalline silicon piece of sheet glass or resistivity more than 10 Ω cm, so
Corroded afterwards using etchant solution and microcavity body；
(2) sheet glass to step (1) or the high resistant monocrystalline silicon piece back side carry out photoetching, then corrode to run through using etchant solution
The sheet glass or the micro through hole of high resistant monocrystalline silicon piece；Obtain first substrate (1-1)；
The preparation of second substrate (1-2)：
(a) it is lithographically formed fluid channel array pattern at the back side of the silicon chip of low-resistivity of the resistivity less than 0.01 Ω cm；
(b) back side of the low-resistivity silicon chip of step (a) is performed etching using deep reaction ion etching technique, forms fluid channel
Array；
(c) using the one layer of nitridation of front deposition of low-pressure chemical vapor deposition process to the low-resistivity silicon chip described in step (b)
Silicon；
(d) photoetching is carried out to the front of the low-resistivity silicon chip described in step (c), middle part is removed using reactive ion etching process
Exposed silicon nitride layer；
(e) using electrochemical corrosive process, to step (d), the front etch of obtained low-resistivity silicon chip goes out porous structure, makes
Porous structure is connected with the miniflow channel array at the back side；
(f) n-type silicon film is made to step (e) front side of silicon wafer using LPCVD or sputtering technology；
(g) using the extra silicon thin film of reactive ion etching removal step (f)；
(h) local heavy doping is carried out to the silicon thin film of step (g), to form Ohmic contact；
(i) sputtered metal film makes diode lead and metal pad (6) using stripping technology, obtains diode temperature biography
Sensor (7)；As described second substrate (1-2)；
The preparation of the MEMS electronic cigarette euthermic chips of integrated diode temperature sensor:
The front of first substrate (1-1) and the back side of second substrate (1-2) are in close contact by (first), and work is closed by strong
Skill is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the integrated diode temperature sensing
The MEMS euthermic chips of device.
9. preparation method according to claim 7, which is characterized in that the corrosive liquid described in step (1) or (2), wherein glass
The corrosive liquid of glass piece is hydrofluoric acid solution, and the corrosive liquid of high resistant monocrystalline silicon piece is molten for potassium hydroxide solution or tetramethylammonium hydroxide
One of liquid.
10. preparation method according to claim 7, which is characterized in that step (i) the sputtered metal film material is
Ti/Pt/Au。
11. preparation method according to claim 7, which is characterized in that the diode temperature sensor (7) is Schottky
Diode temperature sensor, including as substrate n-type silicon film (9), collectively form the N-shaped heavily doped region of diode cathode
(10) and metal lead wire (12) and the Schottky contact electrode (11) as diode cathode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113460946A (en) * | 2021-07-26 | 2021-10-01 | 美满芯盛(杭州)微电子有限公司 | Double-substrate gasification chip and manufacturing method thereof |
| CN113876041A (en) * | 2021-09-22 | 2022-01-04 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
| CN116429300A (en) * | 2023-06-12 | 2023-07-14 | 之江实验室 | Ultrahigh temperature pressure sensing chip and system based on monocrystalline silicon and micro-channel cooling |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154514A (en) * | 1991-08-29 | 1992-10-13 | International Business Machines Corporation | On-chip temperature sensor utilizing a Schottky barrier diode structure |
| KR950009245A (en) * | 1993-09-02 | 1995-04-21 | 김주용 | Temperature sensor manufacturing method using semiconductor diode |
| CN1282003A (en) * | 1999-07-26 | 2001-01-31 | 三星电子株式会社 | Chip heating device and method for using heated chip |
| JP2002162047A (en) * | 2000-11-24 | 2002-06-07 | Sekisui Chem Co Ltd | System for temperature control of heating-unit panel |
| CN1359733A (en) * | 2002-01-29 | 2002-07-24 | 清华大学 | Piezoelectrically driven microspray method and apparatus for atomizing administration |
| US20030116552A1 (en) * | 2001-12-20 | 2003-06-26 | Stmicroelectronics Inc. | Heating element for microfluidic and micromechanical applications |
| CN1530041A (en) * | 2003-03-14 | 2004-09-22 | Noncombustible electronic atomized cigarette | |
| TW200418629A (en) * | 2003-03-24 | 2004-10-01 | Chien Hui Chuan | Built-in high frequency indction-heating module for injection molding |
| US20040222430A1 (en) * | 2003-02-03 | 2004-11-11 | International Rectifier Corporation | Temperature-sensing diode |
| US20060174703A1 (en) * | 2005-02-07 | 2006-08-10 | Ngk Spark Plug Co., Ltd. | Micro-heater and sensor |
| JP2007286546A (en) * | 2006-04-20 | 2007-11-01 | Konica Minolta Business Technologies Inc | Fixing device |
| WO2008093090A2 (en) * | 2007-01-31 | 2008-08-07 | Imperial Innovations Limited | Deposition of organic layers |
| KR20100010498U (en) * | 2009-04-16 | 2010-10-26 | 대광센서 주식회사 | A Heater with Temperature Senser and Hair Iron having the Same |
| CN102593024A (en) * | 2012-01-18 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for measuring junction temperature of multi-chip embedded type packaging chip by using integrated resistor |
| CN102610539A (en) * | 2012-01-18 | 2012-07-25 | 中国科学院上海微系统与信息技术研究所 | Method for measuring junction temperature of multi-chip embedded packaged chip by using integrated pn junction |
| US20160007653A1 (en) * | 2014-07-11 | 2016-01-14 | Xiang Zheng Tu | MEMS Vaporizer |
| CN105451383A (en) * | 2015-11-23 | 2016-03-30 | 中国科学院理化技术研究所 | Electromagnetic induction micro-heating device |
| CN205831080U (en) * | 2016-07-19 | 2016-12-28 | 云南中烟工业有限责任公司 | A kind of MEMS for electronic cigarette is atomized chip |
| CN207821101U (en) * | 2018-01-03 | 2018-09-07 | 云南中烟工业有限责任公司 | A kind of MEMS euthermic chips of integrated diode temperature sensor |
-
2018
- 2018-01-03 CN CN201810004112.2A patent/CN108185526B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5154514A (en) * | 1991-08-29 | 1992-10-13 | International Business Machines Corporation | On-chip temperature sensor utilizing a Schottky barrier diode structure |
| KR950009245A (en) * | 1993-09-02 | 1995-04-21 | 김주용 | Temperature sensor manufacturing method using semiconductor diode |
| CN1282003A (en) * | 1999-07-26 | 2001-01-31 | 三星电子株式会社 | Chip heating device and method for using heated chip |
| JP2002162047A (en) * | 2000-11-24 | 2002-06-07 | Sekisui Chem Co Ltd | System for temperature control of heating-unit panel |
| US20030116552A1 (en) * | 2001-12-20 | 2003-06-26 | Stmicroelectronics Inc. | Heating element for microfluidic and micromechanical applications |
| CN1359733A (en) * | 2002-01-29 | 2002-07-24 | 清华大学 | Piezoelectrically driven microspray method and apparatus for atomizing administration |
| US20040222430A1 (en) * | 2003-02-03 | 2004-11-11 | International Rectifier Corporation | Temperature-sensing diode |
| CN1530041A (en) * | 2003-03-14 | 2004-09-22 | Noncombustible electronic atomized cigarette | |
| TW200418629A (en) * | 2003-03-24 | 2004-10-01 | Chien Hui Chuan | Built-in high frequency indction-heating module for injection molding |
| US20060174703A1 (en) * | 2005-02-07 | 2006-08-10 | Ngk Spark Plug Co., Ltd. | Micro-heater and sensor |
| JP2007286546A (en) * | 2006-04-20 | 2007-11-01 | Konica Minolta Business Technologies Inc | Fixing device |
| WO2008093090A2 (en) * | 2007-01-31 | 2008-08-07 | Imperial Innovations Limited | Deposition of organic layers |
| KR20100010498U (en) * | 2009-04-16 | 2010-10-26 | 대광센서 주식회사 | A Heater with Temperature Senser and Hair Iron having the Same |
| CN102593024A (en) * | 2012-01-18 | 2012-07-18 | 中国科学院上海微系统与信息技术研究所 | Method for measuring junction temperature of multi-chip embedded type packaging chip by using integrated resistor |
| CN102610539A (en) * | 2012-01-18 | 2012-07-25 | 中国科学院上海微系统与信息技术研究所 | Method for measuring junction temperature of multi-chip embedded packaged chip by using integrated pn junction |
| US20160007653A1 (en) * | 2014-07-11 | 2016-01-14 | Xiang Zheng Tu | MEMS Vaporizer |
| CN105451383A (en) * | 2015-11-23 | 2016-03-30 | 中国科学院理化技术研究所 | Electromagnetic induction micro-heating device |
| CN205831080U (en) * | 2016-07-19 | 2016-12-28 | 云南中烟工业有限责任公司 | A kind of MEMS for electronic cigarette is atomized chip |
| CN207821101U (en) * | 2018-01-03 | 2018-09-07 | 云南中烟工业有限责任公司 | A kind of MEMS euthermic chips of integrated diode temperature sensor |
Non-Patent Citations (2)
| Title |
|---|
| 丛秋波: "首款单芯片无源 IR MEMS温度传感器实现非接触温 度测量功能" * |
| 陈明祥: "基于感应加热的MEMS封装技术与应用研究" * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113460946A (en) * | 2021-07-26 | 2021-10-01 | 美满芯盛(杭州)微电子有限公司 | Double-substrate gasification chip and manufacturing method thereof |
| CN113460946B (en) * | 2021-07-26 | 2024-08-02 | 美满芯盛(杭州)微电子有限公司 | Double-substrate gasification chip and manufacturing method thereof |
| CN113876041A (en) * | 2021-09-22 | 2022-01-04 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
| WO2023045664A1 (en) * | 2021-09-22 | 2023-03-30 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
| CN116429300A (en) * | 2023-06-12 | 2023-07-14 | 之江实验室 | Ultrahigh temperature pressure sensing chip and system based on monocrystalline silicon and micro-channel cooling |
| CN116429300B (en) * | 2023-06-12 | 2023-09-22 | 之江实验室 | Ultrahigh temperature pressure sensing chip and system based on monocrystalline silicon and micro-channel cooling |
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