CN108354228A - A kind of the MEMS euthermic chips and its manufacturing method of integrated Pt temperature sensors - Google Patents
A kind of the MEMS euthermic chips and its manufacturing method of integrated Pt temperature sensors Download PDFInfo
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- CN108354228A CN108354228A CN201810004078.9A CN201810004078A CN108354228A CN 108354228 A CN108354228 A CN 108354228A CN 201810004078 A CN201810004078 A CN 201810004078A CN 108354228 A CN108354228 A CN 108354228A
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors, including：There is the microcavity body (2) of concave in first substrate (1 1), front；There is the micro through hole (3) through the first substrate (1 1) in microcavity body (2)；Second substrate (1 2), there is the miniflow channel array (4) perpendicular to its back side at its back side, front center region is equipped with perpendicular to its positive porous structure (5), and miniflow channel array (4) is connected to porous structure (5)；Its front edge has metal lead wire pad (6)；There are one Pt film resistor temperature sensors (7) for its front face surface；The front of first substrate (1 1) is together with the back adhesive of the second substrate (1 2).The temperature of the electronic cigarette euthermic chip of the present invention can be measured in real time.The invention also discloses the preparation methods of the MEMS electronic cigarette euthermic chips of the integrated Pt film resistor temperature sensors.
Description
Technical field
The present invention relates to electronic cigarette technical field, more particularly to the MEMS electricity of a kind of integrated Pt film resistor temperature sensors
Sub- cigarette euthermic chip and its manufacturing method.
Background technology
Most commercially available electronic cigarettes use heating wire for heater element, and under power supply state, heating wire is converted by electric heating and produced
Raw high heat heating tobacco juice is allowed to be atomized.Due to helical structure and oil-guiding element the winding side on it of heating wire itself
Formula so that the phenomenon that localized hyperthermia inevitably occurs at work in heating wire.Tobacco juice ingredient, Oil Guide the material temperature excessively high in electronic cigarette
The lower variation that physicochemical property can occur of degree, it is possible to create harmful pyrolysis product；Under high temperature, some fragrance components in tobacco juice can quilt
It destroys, influences to inhale the rich of taste；The excessively high flue-gas temperature that atomization can also generated of electronic cigarette temperature is excessively high, may be to respiratory tract
It causes to damage；In the case of tobacco juice insufficient supply, excessively high temperature can also burn atomization core (paste core), generate burning, suction
Experience is deteriorated.
In order to improve disadvantages described above, in recent years, occurs temperature control technology in electronic cigarette.The basic principle of the temperature control technology
It is：Electronic cigarette temperature controlling chip by read heating wire resistance, to monitor heating wire temperature.Heating wire is substantially resistance wire,
When heating wire temperature increases, the Collision Number between heating wire internal metal ion increases therewith, and then the resistivity of metal can be with
Temperature change, it is associated by temperature-coefficient of electrical resistance between temperature and resistance value.Specifically, electronic cigarette is built-in with heating wire resistance value
Detection circuit allows user to like the maximum temperature of setting heating wire according to itself.The reference resistance of heating wire is surveyed at room temperature
It is fixed, to determine and the relevant correct temperature of benchmark resistance value, then, resistance value when being started by METHOD FOR CONTINUOUS DETERMINATION electronic cigarette and application
Resistance v. temperature formula estimates the operating temperature of electronic cigarette.By the special algorithm of temperature controlling chip, regulating cell output power,
Heating wire resistance value is set to be no more than calculated value corresponding with user's set temperature.Currently used temp controlled heating silk type mainly has
Nickel 200, titanium and 316 stainless steel wires etc..The advantage of the technology be heating wire will not overheat, will not dry combustion method, also while avoiding cigarette
The peculiar smell and harmful substance generated under the excessively high evaporating temperature of liquid, is substantially improved the overall experience and safety in utilization of electronic cigarette.
Currently, " temperature control " applied to electronic cigarette is actually to converse corresponding temperature according to the resistance change of metal
To realize so-called " temperature control ", finally still realized according to the resistance variations of heating wire.The temperature control mode is not logical
Excess temperature sensor detects temperature, but calculates the change in resistance of heating wire by electronic cigarette host chip to converse temperature
Information, so the temperature control of actually current electronic cigarette is using the change in resistance of heating wire as foundation, it is not with actual temperature
Come what is judged, as a result, the accuracy of temperature is directly related to the accuracy of resistance value, and the initial resistance value as fruit chip detects is inaccurate
Really, that would not be accurate according to the temperature that temperature-coefficient of electrical resistance calculates, if radix mistake, that entire result of calculation is also
Mistake.In addition, the temperature control mode still remains problems with：The resistance value of heating wire can only reflect whole temperature conditions,
When generation local temperature is excessively high, cannot effectively it monitor；Secondly in use, heating wire can because high temperature ageing,
The reasons such as oxidation lead to the variation of resistance, and temperature measurement error can be caused increasing.
In numerous temp measuring methods, resistance temperature sensor (or thermometer resistor, usual abbreviation RTD) is most accurate side
One of method, and advantage of the film resistor temperature sensor compared to tradition RTD is highly sensitive and rapid thermal response, this is because its
Smaller size reduces the heat exchange between sensing element and environment.Metal platinum (Pt) is because of good response, the resistivity to heat
Highly linear positive correlation between temperature and long-term chemical durability at high temperature, and sensed as Thin film resistive temperature
The preferred material of device.Currently, COMS (complementary metal oxide semiconductor) work can be used in majority Pt film resistor temperature sensors
Skill or MEMS (MEMS) techniques are prepared on silicon or metal substrate.Pt is used especially in MEMS device, is allowed
Manufacture when the temperature rises can have plastic deformation the structure of high resistance.
Invention content
It is an object of the invention to solve the problems, such as that existing electronic cigarette temperature control technology exists, skill is processed using advanced MEMS
Art designs the MEMS electronic cigarettes euthermic chip and its manufacturing method of integrated temperature sensor.By integrating Pt temperature sensors,
The temperature of MEMS euthermic chips is real-time and accurately measured, and coordinates external temperature controller, realizes the accurate of MEMS euthermic chips
Control, makes tobacco juice uniform atomizing.
First aspect present invention discloses a kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors,
Including：
First substrate 1-1, in the form of sheets, front have the microcavity body 2 of concave；Have through described first in the microcavity body 2
The micro through hole 3 of substrate 1-1；
Second substrate 1-2, in the form of sheets, the back side have the miniflow channel array 4 perpendicular to its back side, front center region to be equipped with
Perpendicular to its positive porous structure 5, the miniflow channel array 4 is connected to porous structure 5；Its front edge has metal lead wire weldering
Disk 6；There are one Pt film resistor temperature sensors 7 for its front face surface center；
The front of the first substrate 1-1 is together with the back adhesive of the second substrate 1-2.
Preferably, the depth of the microcavity body 2 is 1 millimeter to 5 millimeters；A diameter of 500 microns to 1 of the micro through hole 3
Millimeter.
Preferably, there is a metallic film in the front of the second substrate 1-2, and the thickness of the metallic film is 200~
500nm；The material of the metallic film is one or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
Preferably, a diameter of 10 microns to 500 microns of the fluid channel of the miniflow channel array 4, the depth of the fluid channel
Degree is the 1/2~3/4 of the second substrate 1-2 height.
Preferably, the aperture of the porous structure 5 is 100 nanometers to 1000 nanometers.
Preferably, first substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is more than
10Ω·cm。
Preferably, second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is less than 0.01
Ω·cm。
Second aspect of the present invention discloses a kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors
Preparation method, include the following steps：
The preparation of first substrate 1-1：
(1) it is lithographically formed microcavity body figure in the front of the high resistant monocrystalline silicon piece of sheet glass or resistivity more than 10 Ω cm
Then shape is corroded using etchant solution and microcavity body 2；
(2) sheet glass to step (1) or the high resistant monocrystalline silicon piece back side carry out photoetching, then corrode using etchant solution
Through the sheet glass or the micro through hole 3 of high resistant monocrystalline silicon piece；Obtain the first substrate 1-1；
The preparation of second substrate 1-2：
(a) it is lithographically formed fluid channel array of figure at the back side of the silicon chip of low-resistivity of the resistivity less than 0.01 Ω cm
Shape；
(b) back side of the low-resistivity silicon chip of step (a) is performed etching using deep reaction ion etching technique, is formed micro-
Runner array 4；
(c) front deposition one layer of the low-pressure chemical vapor deposition process to the low-resistivity silicon chip described in step (b) is used
Silicon nitride；
(d) photoetching is carried out to the front of the low-resistivity silicon chip described in step (c), is removed using reactive ion etching process
The exposed silicon nitride layer in middle part；
(e) porous knot is gone out to the front etch of the obtained low-resistivity silicon chip of step (d) using electrochemical corrosive process
Structure 5 makes porous structure be connected to the miniflow channel array at the back side；
(f) is sputtered by Pt metallic films, passes through stripping in front side of silicon wafer photoetching for the obtained low-resistivity silicon chip of step (e)
Separating process makes Pt film resistor temperature sensors 7；
(g) the remaining nitridation in front of the low-resistivity silicon chip described in reactive ion etching process removal step (e) is used
Silicon, then sputtered metal film, metal pad 6, the as described second substrate 1-2 are made using stripping technology；
The preparation of the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors:
The front of the first substrate 1-1 and the back side of the second substrate 1-2 are in close contact by (first), and work is closed by strong
Skill is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the MEMS of the consistent heat generation
Electronic cigarette chip.
Preferably, the corrosive liquid described in step (1) or (2), the wherein corrosive liquid of sheet glass are hydrofluoric acid solution, high resistant list
The corrosive liquid of crystal silicon chip is one of potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
Preferably, the metallic film material that step (g) is sputtered is in Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au
It is one or more of.
The beneficial outcomes of the present invention：
(1) present invention measures the temperature of electronic cigarette euthermic chip using platinum resistance temperature sensor is integrated in real time,
It is accurate that temperature measures, and sensor life-time is long, reliable operation, effectively prevent existing electronic cigarette fever temperature measure it is inaccurate,
Heater aging leads to problems such as temperature detecting resistance constantly change；It can be adjusted simultaneously into trip temperature according to user demand, to change
Become atomization quantity.
(2) the MEMS electronic cigarette euthermic chip production processes of integrated Pt film resistor temperature sensors of the invention are simple,
Technological standards are appropriate for producing in batches.
Description of the drawings
Fig. 1 is the side, sectional of the MEMS electronic cigarette euthermic chips of the integrated Pt film resistor temperature sensors of the present invention
Figure；
Fig. 2 is the first side of substrate sectional view of the invention；
Fig. 3 the second side of substrate sectional views；
Fig. 4 the second substrate face vertical views；
Fig. 5 the second substrate back vertical views.
Reference numeral is：1-1, the first substrate；2, microcavity body；3, micro through hole；4, fluid channel displays；5, porous structure；6、
Metal pad；7, Pt temperature sensors；8, silicon nitride layer
Specific implementation mode
A kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors of the present invention, including：
First substrate 1-1 is in disc-shaped, and there is the microcavity body 2 of concave in front；Have in the microcavity body 2 through described
The micro through hole 3 of one substrate 1-1；
Second substrate 1-2 is in disc-shaped, and the back side has the miniflow channel array 4 perpendicular to its back side, front center region to set
Have perpendicular to its positive porous structure 5, the miniflow channel array 4 is connected to porous structure 5；Its front edge has metal lead wire
Pad 6；There are one Pt film resistor temperature sensors 7 at its front face surface center；
The front of the first substrate 1-1 is together with the back adhesive of the second substrate 1-2.
The depth of the microcavity body 2 is selected as 3 millimeters；The diameter of the micro through hole 3 is selected as 750 microns.
The front of the second substrate 1-2 has metallic film, the thickness of the metallic film to be selected as 300nm；The metal
The material of film is selected as Ti/Pt/Au.
The diameter of the fluid channel of the miniflow channel array 4 is selected as 30 microns, and the depth of the fluid channel is selected as described second
The 1/2 of substrate 1-2 height.
It is selected as 500 nanometers in the aperture of the porous structure 5.
First substrate is selected as high resistant monocrystalline silicon and is made, and the resistivity of the high resistant monocrystalline silicon is selected as 20 Ω cm.
Second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is selected as 0.005 Ω cm.
Second aspect of the present invention discloses a kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors
Preparation method, include the following steps：
The preparation of first substrate 1-1：
(1) front that the high resistant monocrystalline silicon wafer of 20 Ω cm is selected as in resistivity is lithographically formed microcavity volume graphic, then
Corroded using etchant solution potassium hydroxide solution and microcavity body 2；
(2) photoetching is carried out to the high resistant monocrystalline silicon wafer back side of step (1), then uses corrosive liquid for potassium hydroxide solution
Corrode the micro through hole 3 through the high resistant monocrystalline silicon piece；Obtain the first substrate 1-1；
The preparation of second substrate 1-2：
(a) back side that the silicon wafer of the low-resistivity of 0.005 Ω cm is selected as in resistivity is lithographically formed miniflow channel array
Figure；
(b) back side of the low-resistivity silicon wafer of step (a) is performed etching using deep reaction ion etching technique, is formed
Miniflow channel array 4；
(c) front deposition one of the low-pressure chemical vapor deposition process to the low-resistivity silicon wafer described in step (b) is used
Layer silicon nitride；
(d) photoetching is carried out to the front of the low-resistivity silicon wafer described in step (c), is gone using reactive ion etching process
Except the exposed silicon nitride layer in middle part；
(e) front etch of the obtained low-resistivity silicon wafer of step (d) is gone out using electrochemical corrosive process porous
Structure (5) makes porous structure be connected to the miniflow channel array at the back side；
(f) Pt metallic films are sputtered in the photoetching of silicon wafer front to the obtained low-resistivity silicon wafer of step (e), led to
It crosses stripping technology and makes Pt film resistor temperature sensors 7；
(g) the remaining nitrogen in front of the low-resistivity silicon wafer described in reactive ion etching process removal step (e) is used
SiClx, then sputtered metal film material is Ti/Pt/Au, and metal pad 6 is made using stripping technology, as described second lining
Bottom 1-2；
The preparation of the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors:
The front of first substrate (1-1) and the back side of the second substrate 1-2 are in close contact by (first), are closed by strong
Technique is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the MEMS of the consistent heat generation
Electronic cigarette chip.
Claims (10)
1. a kind of MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors, which is characterized in that including：
First substrate (1-1), in the form of sheets, front have the microcavity body (2) of concave；Have in the microcavity body (2) through described the
The micro through hole (3) of one substrate (1-1)；
Second substrate (1-2), in the form of sheets, the back side have the miniflow channel array (4) perpendicular to its back side, and front center region is equipped with
Perpendicular to its positive porous structure (5), the miniflow channel array (4) is connected to porous structure (5)；Its front edge has metal
Lead pad (6)；There are one Pt film resistor temperature sensors (7) for its front face surface；
The front of first substrate (1-1) is together with the back adhesive of second substrate (1-2).
2. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, the depth of the microcavity body (2) is 1 millimeter to 5 millimeters；A diameter of 500 microns to 1 millimeter of the micro through hole (3).
3. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, there is metallic film in the front of second substrate (1-2), and the thickness of the metallic film is 200~500nm；The gold
The material for belonging to film is one or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
4. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, a diameter of 10 microns to 500 microns of the fluid channel of the miniflow channel array (4), the depth of the fluid channel is described
The 1/2~3/4 of second substrate (1-2) height.
5. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, the aperture of the porous structure (5) is 100 nanometers to 1000 nanometers.
6. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, first substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is more than 10 Ω cm.
7. the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors according to claim 1, feature
It is, second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is less than 0.01 Ω cm.
8. a kind of preparation method of the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors, which is characterized in that
Include the following steps：
The preparation of first substrate (1-1)：
(1) it is lithographically formed microcavity volume graphic in the front of the high resistant monocrystalline silicon piece of sheet glass or resistivity more than 10 Ω cm, so
Corroded afterwards using etchant solution and microcavity body (2)；
(2) sheet glass to step (1) or the high resistant monocrystalline silicon piece back side carry out photoetching, then corrode to run through using etchant solution
The micro through hole (3) of the sheet glass or high resistant monocrystalline silicon piece；Obtain first substrate (1-1)；
The preparation of second substrate (1-2)：
(a) it is lithographically formed fluid channel array pattern at the back side of the silicon chip of low-resistivity of the resistivity less than 0.01 Ω cm；
(b) back side of the low-resistivity silicon chip of step (a) is performed etching using deep reaction ion etching technique, forms fluid channel
Array (4)；
(c) front deposition one layer nitrogen of the low-pressure chemical vapor deposition process to the obtained low-resistivity silicon chip of step (b) is used
SiClx；
(d) photoetching is carried out to the front of the obtained low-resistivity silicon chip of step (c), in being removed using reactive ion etching process
The exposed silicon nitride layer in portion；
(e) porous structure is gone out to the front etch of the obtained low-resistivity silicon chip of step (d) using electrochemical corrosive process
(5), porous structure is made to be connected to the miniflow channel array at the back side；
(f) Pt metallic films are sputtered in front side of silicon wafer photoetching to the obtained low-resistivity silicon chip of step (e), by removing work
Skill makes Pt film resistor temperature sensors (7)；
(g) the remaining silicon nitride in front of the low-resistivity silicon chip described in reactive ion etching process removal step (e) is used, so
Sputtered metal film afterwards makes metal pad (6), as described second substrate (1-2) using stripping technology；
The preparation of the MEMS electronic cigarette euthermic chips of integrated Pt film resistor temperature sensors:
The front of first substrate (1-1) and the back side of second substrate (1-2) are in close contact by (first), and work is closed by strong
Skill is bonded together；
The chip that (second) is obtained step (first) using scribing machine carries out scribing to get to the MEMS electronics of the consistent heat generation
Cigarette chip.
9. preparation method according to claim 8, which is characterized in that the corrosive liquid described in step (1) or (2), wherein glass
The corrosive liquid of glass piece is hydrofluoric acid solution, and the corrosive liquid of high resistant monocrystalline silicon piece is that potassium hydroxide solution or tetramethylammonium hydroxide are molten
One of liquid.
10. preparation method according to claim 8, which is characterized in that the metallic film material that step (g) is sputtered is
One or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
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| CN201810004078.9A CN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004078.9A CN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109770438A (en) * | 2019-03-25 | 2019-05-21 | 云南中烟工业有限责任公司 | A kind of plated film silicon-based electronic aerosolization chip and preparation method thereof |
| CN110954244A (en) * | 2018-09-27 | 2020-04-03 | 中国科学院微电子研究所 | Temperature measuring device |
| CN113662250A (en) * | 2021-09-02 | 2021-11-19 | 美满芯盛(杭州)微电子有限公司 | MEMS silicon-based atomizing core and manufacturing method thereof |
| CN113876041A (en) * | 2021-09-22 | 2022-01-04 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
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| WO2023045664A1 (en) * | 2021-09-22 | 2023-03-30 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
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