CN208192128U - A kind of MEMS euthermic chip integrating multiple Pt film resistor temperature sensors - Google Patents
A kind of MEMS euthermic chip integrating multiple Pt film resistor temperature sensors Download PDFInfo
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- CN208192128U CN208192128U CN201820006194.XU CN201820006194U CN208192128U CN 208192128 U CN208192128 U CN 208192128U CN 201820006194 U CN201820006194 U CN 201820006194U CN 208192128 U CN208192128 U CN 208192128U
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Abstract
The utility model discloses a kind of MEMS euthermic chips for integrating multiple Pt film resistor temperature sensors, comprising: there is the microcavity body (2) of concave in the first substrate (1-1), front；There is the micro through hole (3) through the first substrate (1-1) in microcavity body (2)；Second substrate (1-2), there is the miniflow channel array (4) perpendicular to its back side at its back side, front center region is equipped with perpendicular to its positive porous structure (5), and miniflow channel array (4) is connected to porous structure (5)；Its front face surface has multiple Pt film resistor temperature sensors (6)；The front of first substrate (1-1) is together with the back adhesive of the second substrate (1-2).The problems such as euthermic chip of the utility model can carry out real-time measurement to the temperature of euthermic chip, effectively prevent temperature measurement inaccuracy.
Description
Technical field
The utility model relates to electronic cigarette technical field, in particular to one kind integrates multiple Pt film resistor temperature sensors
MEMS electronic cigarette euthermic chip.
Background technique
Most commercially available electronic cigarettes use heating wire for heater element, and under power supply state, heating wire is converted by electric heating and produced
Raw high heat heating tobacco juice is allowed to be atomized.Due to helical structure and oil-guiding element the winding side on it of heating wire itself
Formula, so that the phenomenon that localized hyperthermia inevitably occurs at work in heating wire.Tobacco juice ingredient, Oil Guide the material temperature excessively high in electronic cigarette
The lower variation that physicochemical property can occur of degree, it is possible to create harmful pyrolysis product；Under high temperature, some fragrance components in tobacco juice can quilt
It destroys, influences to inhale the rich of taste；The excessively high flue-gas temperature that atomization can also generated of electronic cigarette temperature is excessively high, may be to respiratory tract
It causes to damage；In the case where tobacco juice insufficient supply, excessively high temperature can also burn atomization core (paste core), generate burning, suction
Experience is deteriorated.
In order to improve disadvantages described above, in recent years, occurs temperature control technology in electronic cigarette.The basic principle of the temperature control technology
Be: electronic cigarette temperature controlling chip passes through the resistance for reading heating wire, to monitor heating wire temperature.Heating wire is substantially resistance wire,
When heating wire temperature increases, the Collision Number between heating wire internal metal ion increases therewith, and then the resistivity of metal can be with
Temperature change, it is associated by temperature-coefficient of electrical resistance between temperature and resistance value.Specifically, electronic cigarette is built-in with heating wire resistance value
Detection circuit allows user to like the maximum temperature of setting heating wire according to itself.The reference resistance of heating wire is surveyed at room temperature
It is fixed, to determine correct temperature relevant to benchmark resistance value, then, resistance value and application when being started by METHOD FOR CONTINUOUS DETERMINATION electronic cigarette
Resistance v. temperature formula estimates the operating temperature of electronic cigarette.By the special algorithm of temperature controlling chip, regulating cell output power,
Heating wire resistance value is set to be no more than calculated value corresponding with user's set temperature.Currently used temp controlled heating silk type mainly has
Nickel 200, titanium and 316 stainless steel wires etc..The advantage of the technology be heating wire will not overheat, will not dry combustion method, also while avoiding cigarette
The peculiar smell and harmful substance generated under the excessively high evaporating temperature of liquid, is substantially improved the overall experience and safety in utilization of electronic cigarette.
Currently, " temperature control " that is applied to electronic cigarette is actually to converse corresponding temperature according to the resistance change of metal
To realize so-called " temperature control ", finally still realized according to the resistance variations of heating wire.The temperature control mode is not logical
Excess temperature sensor detects temperature, but calculates the change in resistance of heating wire by electronic cigarette host chip to converse temperature
Information, so the temperature control of actually current electronic cigarette is using the change in resistance of heating wire as foundation, it is not with actual temperature
Come what is judged, as a result, the accuracy of temperature is directly related to the accuracy of resistance value, and the initial resistance value as fruit chip detects is inaccurate
Really, that would not be accurate according to the temperature that temperature-coefficient of electrical resistance calculates, if radix mistake, that entire calculated result is also
Mistake.In addition, the temperature control mode still remains following problems: the resistance value of heating wire can only reflect whole temperature conditions,
When generation local temperature is excessively high, cannot effectively it monitor；Secondly in use, heating wire can because high temperature ageing,
The reasons such as oxidation lead to the variation of resistance, and it is increasing to will lead to temperature measurement error.
In numerous temp measuring methods, resistance temperature sensor (or thermometer resistor, usual abbreviation RTD) is most accurate side
One of method, and advantage of the film resistor temperature sensor compared to tradition RTD is highly sensitive and rapid thermal response, this is because its
Lesser size reduces the heat exchange between sensing element and environment.Metal platinum (Pt) is because of good response, the resistivity to heat
Highly linear between temperature is positively correlated and long-term chemical durability at high temperature, and becomes Thin film resistive temperature and sense
The preferred material of device.Currently, COMS (complementary metal oxide semiconductor) work can be used in majority Pt film resistor temperature sensor
Skill or MEMS (MEMS) technique are prepared on silicon or metal substrate.Pt is used especially in MEMS device, is allowed
Manufacture can have the structure of high resistance to plastic deformation when the temperature rises.
Utility model content
Utility model aims to solve existing electronic cigarette temperature control technology there are the problem of, using advanced MEMS
Processing technology designs the MEMS electronic cigarette euthermic chip and its manufacturing method of integrated temperature sensor.It is passed by integrated temperature
Sensor, real-time and accurately measures the temperature of MEMS euthermic chip, and cooperates external temperature controller, realizes MEMS euthermic chip
It accurately controls, makes tobacco juice uniform atomizing.
The utility model first aspect discloses a kind of MEMS heat generating core for integrating multiple Pt film resistor temperature sensors
Piece, comprising:
First substrate (1-1), in the form of sheets, front have the microcavity body (2) of concave；Have in the microcavity body (2) through institute
State the micro through hole (3) of the first substrate (1-1)；
Second substrate (1-2), in the form of sheets, the back side have the miniflow channel array (4) perpendicular to its back side, front center region
Equipped with perpendicular to its positive porous structure (5), the miniflow channel array (4) is connected to porous structure (5)；Its front face surface
There are multiple Pt film resistor temperature sensors (6)；
The front of first substrate (1-1) is together with the back adhesive of second substrate (1-2).
Preferably, the depth of the microcavity body (2) is 1 millimeter to 5 millimeters；The diameter of the micro through hole (3) is 500 microns
To 1 millimeter.
Preferably, there is a metallic film in the front of second substrate (1-2), the metallic film with a thickness of 200~
500nm；The metallic film material sputtered is one or more of Ti/Pt or Cr/Pt.
Preferably, the diameter of the fluid channel of the miniflow channel array (4) is 10 microns to 500 microns, the fluid channel
Depth is the 1/2~3/4 of the second substrate (1-2) height.
Preferably, the aperture of the porous structure (5) is 100 nanometers to 1000 nanometers.
Preferably, first substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is greater than
10Ω·cm。
Preferably, second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is less than 0.01
Ω·cm。
A kind of MEMS heat generating core for integrating multiple Pt film resistor temperature sensors of the second disclosure of the invention of the utility model
The preparation method of piece, comprising the following steps:
The preparation of first substrate (1-1):
(1) microcavity body figure is lithographically formed in the front of the high resistance monocrystalline silicon wafer of sheet glass or resistivity greater than 10 Ω cm
Then shape corrodes microcavity body (2) out using etchant solution；
(2) photoetching is carried out to the obtained sheet glass of step (1) or the high resistance monocrystalline silicon wafer back side, then uses etchant solution
Corrode the micro through hole (3) for running through the sheet glass or high resistance monocrystalline silicon wafer out；Obtain first substrate (1-1)；
The preparation of second substrate (1-2):
(a) fluid channel array of figure is lithographically formed less than the back side of the silicon wafer of the low-resistivity of 0.01 Ω cm in resistivity
Shape；
(b) back side of the low-resistivity silicon wafer of step (a) is performed etching using deep reaction ion etching technique, is formed micro-
Runner array (4)；
(c) using low-pressure chemical vapor deposition process to the front deposition one of the obtained low-resistivity silicon wafer of step (b)
Layer silicon nitride；
(d) photoetching is carried out to the front of the obtained low-resistivity silicon wafer of step (c), is gone using reactive ion etching process
Except the exposed silicon nitride layer in middle part；
(e) porous knot is gone out to the front etch of the obtained low-resistivity silicon wafer of step (d) using electrochemical corrosive process
Structure (5) is connected to porous structure with the miniflow channel array at the back side；
(f) to the obtained low-resistivity silicon wafer of step (e) in positive photoetching, magnetron sputtering deposits to form metallic film；
(g) photoetching of spin coating photoresist, formation temperature are carried out in the front side of silicon wafer of the obtained sputtered metal film of step (f)
Sensor pattern；
(h) metallic film exposed using dry etch step (g), leaves required metal thin-film pattern；
(i) the remaining photoresist of the surface step (h) institute is removed with acetone,；
(j) the front side of silicon wafer surface that photoresist is removed in (i) sputters alumina layer；
(K) in the described alumina layer surface (j) aluminium oxide that the photoetching of spin coating photoresist and use dry etching expose again
Layer；
(l) after removing (k) remaining photoresist with acetone, as described second substrate (1-2)
Integrate the preparation of the MEMS euthermic chip of multiple Pt film resistor temperature sensors:
The front of first substrate (1-1) and the back side of second substrate (1-2) are in close contact by (first), by strong
Technique is closed to be bonded together；
(second) carries out scribing using the chip that scribing machine obtains step (first)；
(the third) high temperature sintering after the second substrate face silver paste bonding conducting wire for the chip scribing for obtaining step (second)
Cooled to room temperature is afterwards to get to the MEMS euthermic chip for integrating multiple Pt film resistor temperature sensors.
Preferably, corrosive liquid described in step (1) or (2), wherein the corrosive liquid of sheet glass is hydrofluoric acid solution, high resistant list
The corrosive liquid of crystal silicon chip is one of potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
Preferably, the metallic film material that step (f) is sputtered is one or more of Ti/Pt or Cr/Pt.
Preferably, high temperature described in step (third) is 300~700 DEG C, and sintering time is 10~20 minutes.
The beneficial outcomes of the utility model:
(1) the utility model sends out electronic cigarette using the MEMS euthermic chip for integrating multiple Pt film resistor temperature sensors
The temperature of hot chip carries out real-time measurement, and temperature measurement is accurate, and sensor life-time length, reliable operation effectively prevent existing electricity
Sub- cigarette fever temperature measurement inaccuracy, heater aging lead to problems such as temperature detecting resistance constantly change；Chip can be carried out real
Shi Wendu control, first is that avoiding overheating；Second is that temperature adjusting can be carried out according to user demand, thus change atomization quantity, tobacco juice point
It is good to dissipate effect, homogeneous heating can effectively improve heat utilization efficiency, improve atomizing effect.
(2) can multiple platinum resistance temperature sensors be arranged according to actual needs in the utility model, to chip surface temperature
Distributed measurement is carried out, the Temperature Distribution of chip different zones is obtained, avoidable existing method leads to not measure heater office
The problem of portion's temperature.
Detailed description of the invention
Fig. 1 is the side, sectional of the MEMS euthermic chip for integrating multiple Pt film resistor temperature sensors of the utility model
Figure；
Fig. 2 is the first side of substrate of the utility model cross-sectional view；
Fig. 3 the second side of substrate cross-sectional view；
Fig. 4 the second substrate face top view；
Fig. 5 the second substrate back top view.
Appended drawing reference are as follows: 1-1, the first substrate；1-2, the second substrate；2, microcavity body；3, micro through hole；4, fluid channel displays；
5, porous structure；6, Pt temperature sensor；7, silicon nitride layer；8,Al2O3Layer.
Specific embodiment
The utility model first aspect discloses a kind of MEMS heat generating core for integrating multiple Pt film resistor temperature sensors
Piece, comprising:
First substrate (1-1), in the form of sheets, front have the microcavity body (2) of concave；Have in the microcavity body (2) through institute
State the micro through hole (3) of the first substrate (1-1)；
Second substrate (1-2), in the form of sheets, the back side have the miniflow channel array (4) perpendicular to its back side, front center region
Equipped with perpendicular to its positive porous structure (5), the miniflow channel array (4) is connected to porous structure (5)；Its front face surface
There are multiple Pt film resistor temperature sensors (6)；
The front of first substrate (1-1) is together with the back adhesive of second substrate (1-2).
The depth of the microcavity body (2) is 3 millimeters；The diameter of the micro through hole (3) is 750 microns.
There is a metallic film in the front of second substrate (1-2), the metallic film with a thickness of 350nm；The metal
The material of film is Ti/Pt/Au.
The diameter of the fluid channel of the miniflow channel array (4) is 35 microns, and the depth of the fluid channel is second lining
The 1/2 of bottom (1-2) height.
The aperture of the porous structure (5) is 500 nanometers.
First substrate is made of glass or high resistant monocrystalline silicon, and the resistivity of the high resistant monocrystalline silicon is 20 Ω cm.
Second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is 0.005 Ω cm.
A kind of preparation method step for the MEMS euthermic chip integrating multiple Pt film resistor temperature sensors are as follows:
The preparation of first substrate (1-1):
(1) it is lithographically formed microcavity volume graphic in the front for the high resistance monocrystalline silicon wafer that resistivity is 20 Ω cm, then used
Corrosive liquid is that potassium hydroxide solution corrodes microcavity body (2) out；
(2) photoetching is carried out to the obtained high resistance monocrystalline silicon wafer back side of step (1), then uses corrosive liquid for potassium hydroxide
Solution corrosion goes out the micro through hole (3) of the sheet glass or high resistance monocrystalline silicon wafer that run through described；Obtain the first substrate (1-
1)；
The preparation of second substrate (1-2):
(a) fluid channel array pattern is lithographically formed at the back side of the silicon wafer for the low-resistivity that resistivity is 0.005 Ω cm；
(b) back side of the low-resistivity silicon wafer of step (a) is performed etching using deep reaction ion etching technique, is formed micro-
Runner array (4)；
(c) using low-pressure chemical vapor deposition process to the front deposition one of the obtained low-resistivity silicon wafer of step (b)
Layer silicon nitride；
(d) photoetching is carried out to the front of the obtained low-resistivity silicon wafer of step (c), is gone using reactive ion etching process
Except the exposed silicon nitride layer in middle part；
(e) porous knot is gone out to the front etch of the obtained low-resistivity silicon wafer of step (d) using electrochemical corrosive process
Structure (5) is connected to porous structure with the miniflow channel array at the back side；
(f) to the obtained low-resistivity silicon wafer of step (e) in positive photoetching, magnetron sputtering deposits to form Ti/Pt metal
Film；
(g) there is the front side of silicon wafer of metallic film to carry out the photoetching of spin coating photoresist in obtained sputter of step (f), form temperature
Spend sensor pattern；
(h) metallic film exposed using dry etch step (g), leaves required metal thin-film pattern；
(i) the remaining photoresist of the surface step (h) institute is removed with acetone,；
(j) the front side of silicon wafer surface that photoresist is removed in (i) sputters alumina layer；
(K) in the described alumina layer surface (j) aluminium oxide that the photoetching of spin coating photoresist and use dry etching expose again
Layer；
(l) after removing (k) remaining photoresist with acetone, as described second substrate (1-2)
Integrate the preparation of the MEMS euthermic chip of multiple Pt film resistor temperature sensors:
The front of first substrate (1-1) and the back side of second substrate (1-2) are in close contact by (first), by strong
Technique is closed to be bonded together；
(second) carries out scribing using the chip that scribing machine obtains step (first)；
(the third) 600 DEG C of burnings after the second substrate face silver paste bonding conducting wire for the chip scribing for obtaining step (second)
Knot after ten minutes cooled to room temperature to get to the MEMS heat generating core for integrating multiple Pt film resistor temperature sensors
Piece.
Claims (5)
1. a kind of MEMS euthermic chip for integrating multiple Pt film resistor temperature sensors characterized by comprising
First substrate (1-1), in the form of sheets, front have the microcavity body (2) of concave；Have in the microcavity body (2) through described the
The micro through hole (3) of one substrate (1-1)；First substrate is made of glass or high resistant monocrystalline silicon, the electricity of the high resistant monocrystalline silicon
Resistance rate is greater than 10 Ω cm；
Second substrate (1-2), in the form of sheets, the back side have the miniflow channel array (4) perpendicular to its back side, and front center region is equipped with
Perpendicular to its positive porous structure (5), the miniflow channel array (4) is connected to porous structure (5)；Its front face surface has multiple
Pt film resistor temperature sensor (6)；Second substrate is made of low-resistance single crystal silicon, and the resistivity of the low-resistance single crystal silicon is small
In 0.01 Ω cm；
The front of first substrate (1-1) is together with the back adhesive of second substrate (1-2).
2. the MEMS euthermic chip according to claim 1 for integrating multiple Pt film resistor temperature sensors, feature exist
In the depth of the microcavity body (2) is 1 millimeter to 5 millimeters；The diameter of the micro through hole (3) is 500 microns to 1 millimeter.
3. the MEMS euthermic chip according to claim 1 for integrating multiple Pt film resistor temperature sensors, feature exist
Have a metallic film in, the front of second substrate (1-2), the metallic film with a thickness of 200~500nm；The metal
The material of film is one or more of Ti/Pt/Au, TiW/Au, Al, Cr or Pt/Au.
4. the MEMS euthermic chip according to claim 1 for integrating multiple Pt film resistor temperature sensors, feature exist
It is 10 microns to 500 microns in the diameter of, the fluid channel of the miniflow channel array (4), the depth of the fluid channel is described the
The 1/2~3/4 of two substrates (1-2) height.
5. the MEMS euthermic chip according to claim 1 for integrating multiple Pt film resistor temperature sensors, feature exist
In the aperture of the porous structure (5) is 100 nanometers to 1000 nanometers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820006194.XU CN208192128U (en) | 2018-01-03 | 2018-01-03 | A kind of MEMS euthermic chip integrating multiple Pt film resistor temperature sensors |
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| CN201820006194.XU CN208192128U (en) | 2018-01-03 | 2018-01-03 | A kind of MEMS euthermic chip integrating multiple Pt film resistor temperature sensors |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108158039A (en) * | 2018-01-03 | 2018-06-15 | 云南中烟工业有限责任公司 | A kind of MEMS euthermic chips and its manufacturing method for integrating multiple Pt temperature sensors |
| CN110430625A (en) * | 2019-06-10 | 2019-11-08 | 深圳桐源科技有限公司 | Aerosol generating system, heating module, temperature checking method and device |
| CN112345111A (en) * | 2020-09-28 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | High-power heat source chip and preparation method thereof |
-
2018
- 2018-01-03 CN CN201820006194.XU patent/CN208192128U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108158039A (en) * | 2018-01-03 | 2018-06-15 | 云南中烟工业有限责任公司 | A kind of MEMS euthermic chips and its manufacturing method for integrating multiple Pt temperature sensors |
| CN110430625A (en) * | 2019-06-10 | 2019-11-08 | 深圳桐源科技有限公司 | Aerosol generating system, heating module, temperature checking method and device |
| CN112345111A (en) * | 2020-09-28 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | High-power heat source chip and preparation method thereof |
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