CN213738599U - MEMS single-chip integrated flow temperature and humidity chemical sensor - Google Patents
MEMS single-chip integrated flow temperature and humidity chemical sensor Download PDFInfo
- Publication number
- CN213738599U CN213738599U CN202020967976.7U CN202020967976U CN213738599U CN 213738599 U CN213738599 U CN 213738599U CN 202020967976 U CN202020967976 U CN 202020967976U CN 213738599 U CN213738599 U CN 213738599U
- Authority
- CN
- China
- Prior art keywords
- sensor
- metal film
- humidity
- gas
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Micromachines (AREA)
Abstract
A MEMS single chip integrated flow temperature humidity chemical sensor, a silicon wafer is a substrate of the whole device and is used as a supporting structure; the insulating layer plate-shaped structure insulates and isolates the metal film from the silicon wafer; the sensitive material layer is arranged on the metal film; the passivation layer is arranged on the metal film, and the metal bonding pad is an external electrical connection terminal of the chip; the cavity is formed by etching the interior of the wafer from the back side or the front side of the wafer; the temperature sensor, the gas mass flow sensor, the humidity sensor and the gas chemical sensor are integrated on the metal film. The utility model has the advantages that: the humidity sensor is prepared by depositing a polyimide material on a metal thin film resistor. The gas mass flow sensor measures a temperature change caused by the flow of heated air by a temperature sensor to derive a gas flow rate. The gas chemical sensor tests different gas components through capacitance formed between the metal thin film and the sensitive material layer. The finished product has small volume and high precision.
Description
Technical Field
The utility model relates to a sensor field, in particular to MEMS single-chip integrated flow temperature humidity chemical sensor.
Background
At present, the current MEMS single-chip can not integrate multiple sensors, leads to the volume great, causes the trouble for the use, simultaneously, also can not accomplish the higher degree of precision on the performance of composite sensor.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming above-mentioned problem, provide a MEMS single-chip integrated flow temperature humidity chemical sensor specially.
The utility model provides a MEMS single-chip integrated flow temperature humidity multiple sensor of chemistry, its characterized in that: the MEMS single-chip integrated flow temperature humidity chemical multi-sensor comprises a silicon wafer 1, an insulating layer 2, a metal film 3, a sensitive material layer 4, a passivation layer 5, a metal bonding pad 6, a cavity 7, a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11;
wherein: the silicon wafer 1 is a substrate of the whole device and is used as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, has a plate-shaped structure and plays an insulating role, and insulates and isolates the metal film 3 from the silicon wafer 1; the sensitive material layer 4 is polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides and is arranged on the metal film 3; the passivation layer 5 is a silicon oxide or silicon nitride material piece and is arranged on the metal film, and the metal bonding pad 6 is made of aluminum and gold/chromium and is an external electrical connection terminal of the chip; the cavity 7 is formed by etching the interior of the wafer 1 from the back side or the front side; a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11 are integrated on the metal film 3.
The chamber 7 is of a cuboid cavity structure.
The silicon wafer 1 is made of silicon, is a substrate of the whole device and is used as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, is prepared by low-pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, and insulates and isolates the metal film 3 from the silicon wafer 1; the metal film 3 is made of platinum/chromium or platinum/titanium, is a metal terminal of a resistor structure or a capacitor, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; sensitive material layer 4: polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides forms a chemical gas sensor sensitive layer or a humidity sensor sensitive layer, and the chemical gas sensor sensitive layer or the humidity sensor sensitive layer is prepared by physical vapor deposition technology and then photoetching, stripping or etching technology; the passivation layer 5 is composed of silicon oxide or silicon nitride and is used for protecting a metal film and is prepared by utilizing plasma enhanced gas phase chemical deposition; the metal pad 6 is composed of aluminum and gold/chromium, is an external electrical connection terminal of the chip, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; the cavity 7 is etched from the back or the front of the wafer 1 by using dry etching, wet etching or reactive ion etching technology to form a cavity which is used for realizing thermal isolation under the thin-film metal resistor.
The use of thin film metals such as platinum can be used in the fabrication of resistive temperature sensors, humidity sensors, gas mass flow sensors, and can be used to form the characteristics of the capacitive plates or resistive metal terminals of gas chemical sensors. Techniques for integrating a gas flow sensor, a temperature sensor, a humidity sensor, and a gas chemical sensor on one MEMS chip are presented.
The utility model has the advantages that:
MEMS single-chip integrated flow temperature humidity chemical sensor, the finished product is small, the precision is high. The MEMS resistive temperature sensor is actually manufactured by using a resistance value of a metal film resistor that changes at different temperatures. The MEMS humidity sensor is prepared by depositing polyimide material on a metal film resistor. The gas mass flow sensor is formed by combining a metal film resistance temperature sensor and a metal film resistance heater, and the temperature sensor is used for testing the temperature change caused by the flow of heated air so as to obtain the gas flow. The MEMS gas chemical sensor tests different gas components such as oxygen, carbon dioxide, carbon monoxide and the like through the capacitance formed by the metal film and the sensitive material layer.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and embodiments:
FIG. 1 is a top view of a MEMS single chip integrated flow rate temperature humidity chemical sensor;
FIG. 2 is a schematic cross-sectional view of an MEMS single-chip integrated flow temperature humidity chemical sensor with a back-etched cavity structure;
FIG. 3 is a schematic cross-sectional view of an MEMS single-chip integrated flow temperature and humidity chemical sensor with a front etched cavity structure.
Detailed Description
Example 1
The utility model provides a MEMS single-chip integrated flow temperature humidity multiple sensor of chemistry, its characterized in that: the MEMS single-chip integrated flow temperature humidity chemical multi-sensor comprises a silicon wafer 1, an insulating layer 2, a metal film 3, a sensitive material layer 4, a passivation layer 5, a metal bonding pad 6, a cavity 7, a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11;
wherein: the silicon wafer 1 is a substrate of the whole device and is used as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, has a plate-shaped structure and plays an insulating role, and insulates and isolates the metal film 3 from the silicon wafer 1; the sensitive material layer 4 is polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides and is arranged on the metal film 3; the passivation layer 5 is a silicon oxide or silicon nitride material piece and is arranged on the metal film, and the metal bonding pad 6 is made of aluminum and gold/chromium and is an external electrical connection terminal of the chip; the cavity 7 is formed by etching the interior of the wafer 1 from the back side or the front side; a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11 are integrated on the metal film 3.
The chamber 7 is of a cuboid cavity structure.
In the manufacturing process of the MEMS single-chip integrated flow temperature humidity chemical multi-sensor, a silicon wafer 1 is made of silicon and serves as a substrate of the whole device and serves as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, is prepared by low-pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, and insulates and isolates the metal film 3 from the silicon wafer 1; the metal film 3 is made of platinum/chromium or platinum/titanium, is a metal terminal of a resistor structure or a capacitor, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; sensitive material layer 4: polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides forms a chemical gas sensor sensitive layer or a humidity sensor sensitive layer, and the chemical gas sensor sensitive layer or the humidity sensor sensitive layer is prepared by physical vapor deposition technology and then photoetching, stripping or etching technology; the passivation layer 5 is composed of silicon oxide or silicon nitride and is used for protecting a metal film and is prepared by utilizing plasma enhanced gas phase chemical deposition; the metal pad 6 is composed of aluminum and gold/chromium, is an external electrical connection terminal of the chip, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; the cavity 7 is etched from the back or the front of the wafer 1 by using dry etching, wet etching or reactive ion etching technology to form a cavity which is used for realizing thermal isolation under the thin-film metal resistor.
The use of thin film metals such as platinum can be used in the fabrication of resistive temperature sensors, humidity sensors, gas mass flow sensors, and can be used to form the characteristics of the capacitive plates or resistive metal terminals of gas chemical sensors. Techniques for integrating a gas flow sensor, a temperature sensor, a humidity sensor, and a gas chemical sensor on one MEMS chip are presented.
Example 2
The utility model provides a MEMS single-chip integrated flow temperature humidity multiple sensor of chemistry, its characterized in that: the MEMS single-chip integrated flow temperature humidity chemical multi-sensor comprises a silicon wafer 1, an insulating layer 2, a metal film 3, a sensitive material layer 4, a passivation layer 5, a metal bonding pad 6, a cavity 7, a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11;
wherein: the silicon wafer 1 is a substrate of the whole device and is used as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, has a plate-shaped structure and plays an insulating role, and insulates and isolates the metal film 3 from the silicon wafer 1; the sensitive material layer 4 is polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides and is arranged on the metal film 3; the passivation layer 5 is a silicon oxide or silicon nitride material piece and is arranged on the metal film, and the metal bonding pad 6 is made of aluminum and gold/chromium and is an external electrical connection terminal of the chip; the cavity 7 is formed by etching the interior of the wafer 1 from the back side or the front side; a temperature sensor 8, a gas mass flow sensor 9, a humidity sensor 10 and a gas chemical sensor 11 are integrated on the metal film 3.
The silicon wafer 1 is made of silicon, is a substrate of the whole device and is used as a supporting structure; the insulating layer 2 is made of silicon nitride or silicon oxynitride, is prepared by low-pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, and insulates and isolates the metal film 3 from the silicon wafer 1; the metal film 3 is made of platinum/chromium or platinum/titanium, is a metal terminal of a resistor structure or a capacitor, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; sensitive material layer 4: polyimide or a mixture of tin oxide, zinc, zirconium oxide and other metal oxides forms a chemical gas sensor sensitive layer or a humidity sensor sensitive layer, and the chemical gas sensor sensitive layer or the humidity sensor sensitive layer is prepared by physical vapor deposition technology and then photoetching, stripping or etching technology; the passivation layer 5 is composed of silicon oxide or silicon nitride and is used for protecting a metal film and is prepared by utilizing plasma enhanced gas phase chemical deposition; the metal pad 6 is composed of aluminum and gold/chromium, is an external electrical connection terminal of the chip, is deposited by a physical vapor deposition technology, and is prepared by photoetching, stripping or etching technology; the cavity 7 is etched from the back or the front of the wafer 1 by using dry etching, wet etching or reactive ion etching technology to form a cavity which is used for realizing thermal isolation under the thin-film metal resistor.
The use of thin film metals such as platinum can be used in the fabrication of resistive temperature sensors, humidity sensors, gas mass flow sensors, and can be used to form the characteristics of the capacitive plates or resistive metal terminals of gas chemical sensors. Techniques for integrating a gas flow sensor, a temperature sensor, a humidity sensor, and a gas chemical sensor on one MEMS chip are presented.
Claims (2)
1. The utility model provides a MEMS single-chip integration flow temperature humidity chemical sensor which characterized in that: the MEMS single-chip integrated flow temperature and humidity chemical sensor comprises a silicon wafer (1), an insulating layer (2), a metal film (3), a sensitive material layer (4), a passivation layer (5), a metal bonding pad (6), a cavity (7), a temperature sensor (8), a gas mass flow sensor (9), a humidity sensor (10) and a gas chemical sensor (11);
wherein: the silicon wafer (1) is a substrate of the whole device and is used as a supporting structure; the insulating layer (2) is made of silicon nitride or silicon oxynitride, has a plate-shaped structure, plays an insulating role, and insulates and isolates the metal film (3) from the silicon wafer (1); the sensitive material layer (4) is arranged on the metal film (3); the passivation layer (5) is a silicon oxide or silicon nitride material piece and is arranged on the metal film, and the metal bonding pad (6) is an external electrical connection terminal of the chip; the cavity (7) is formed by etching the inside of the silicon wafer (1) from the back or front side of the silicon wafer; the temperature sensor (8), the gas mass flow sensor (9), the humidity sensor (10) and the gas chemical sensor (11) are integrated on the metal film (3).
2. The MEMS single-chip integrated flow temperature humidity chemical sensor according to claim 1, wherein: the chamber (7) is of a cuboid cavity structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020967976.7U CN213738599U (en) | 2020-06-01 | 2020-06-01 | MEMS single-chip integrated flow temperature and humidity chemical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020967976.7U CN213738599U (en) | 2020-06-01 | 2020-06-01 | MEMS single-chip integrated flow temperature and humidity chemical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213738599U true CN213738599U (en) | 2021-07-20 |
Family
ID=76814129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020967976.7U Active CN213738599U (en) | 2020-06-01 | 2020-06-01 | MEMS single-chip integrated flow temperature and humidity chemical sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213738599U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023109360A1 (en) * | 2021-12-13 | 2023-06-22 | 华为技术有限公司 | Multifunctional sensor and device |
-
2020
- 2020-06-01 CN CN202020967976.7U patent/CN213738599U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023109360A1 (en) * | 2021-12-13 | 2023-06-22 | 华为技术有限公司 | Multifunctional sensor and device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8573052B2 (en) | Capacitive humidity sensor and manufacturing method | |
| US7963147B2 (en) | Micro gas sensor and method for manufacturing the same | |
| CN101308110B (en) | Low-power consumption double module integrated humidity sensitive chip with heating function and its manufacture method | |
| Dibbern | A substrate for thin-film gas sensors in microelectronic technology | |
| EP0376721B1 (en) | Moisture-sensitive device | |
| CN108158039A (en) | A kind of MEMS euthermic chips and its manufacturing method for integrating multiple Pt temperature sensors | |
| GB2179748A (en) | Thermal flow sensor | |
| JPH09257618A (en) | Electro-static capacity type pressure sensor and production thereof | |
| JP2009168649A (en) | Indirect heat type heat-sensitive resistance element, and absolute humidity sensor using the indirect heat type heat-sensitivie resistance element | |
| CN113063530A (en) | MEMS silicon piezoresistive pressure sensor and preparation method thereof | |
| CN213738599U (en) | MEMS single-chip integrated flow temperature and humidity chemical sensor | |
| CN108354228A (en) | A kind of the MEMS euthermic chips and its manufacturing method of integrated Pt temperature sensors | |
| US11635401B2 (en) | Sensor device, method for manufacturing a sensor device and sensor assembly | |
| KR100432465B1 (en) | Thin film piezoresistive sensor and method of making the same | |
| CN111351607B (en) | Manufacturing method of temperature and pressure composite sensor | |
| CN111397776B (en) | Temperature and pressure composite sensor | |
| CN111483974A (en) | MEMS single-chip integrated flow temperature and humidity chemical sensor and process | |
| WO2011149331A1 (en) | Capacitive humidity sensor and method of fabricating thereof | |
| CN117268600A (en) | MEMS pressure sensor chip and preparation method thereof | |
| CN113433191B (en) | Annular heating type gas sensor and preparation method thereof | |
| JP2004037402A (en) | Thin film gas sensor | |
| CN109115358A (en) | A kind of microelectromechanicsystems systems array formula platinum film temperature sensor and preparation method thereof | |
| JPH08110317A (en) | Integrated micro sensor | |
| JP5769043B2 (en) | Electrical device, integrated device, electronic circuit and temperature calibration device | |
| CN115452035A (en) | Sensor chip integrating pressure and humidity detection and processing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |