CN105236344A - Structure and manufacturing method of novel resonant thin-film thermoelectric converter - Google Patents
Structure and manufacturing method of novel resonant thin-film thermoelectric converter Download PDFInfo
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- CN105236344A CN105236344A CN201510564464.XA CN201510564464A CN105236344A CN 105236344 A CN105236344 A CN 105236344A CN 201510564464 A CN201510564464 A CN 201510564464A CN 105236344 A CN105236344 A CN 105236344A
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Abstract
The invention discloses a structure and a manufacturing method of a novel resonant thin-film thermoelectric converter. The thin-film thermoelectric converter consists of a heating resistor (2), a micro-bridge resonator A (3) and a micro-bridge resonator B (4) which are manufactured on the same substrate (1). Heat generated and radiated after the heating resistor (2) is powered on causes temperature rise of the micro-bridge resonator A (3), and an axial pressure stress of the micro-bridge resonator A (3) increases or a tensile stress of the micro-bridge resonator A (3) decreases, so that a resonant frequency of the micro-bridge resonator A (3) decreases. The micro-bridge resonator B (4) is insusceptible to the heat radiated by the heating resistor (2), and a resonant frequency of the micro-bridge resonator B (4) is only influenced by the substrate (1) and the environmental temperature, so that a magnitude of an input voltage or current loaded onto the heating resistor (2) can be reflected by measurement of a difference value between the resonant frequencies of the micro-bridge resonator A (3) and the micro-bridge resonator B (4). The novel resonant thin-film thermoelectric converter disclosed by the invention has the advantage that the heating resistor (2), the micro-bridge resonator A (3) and the micro-bridge resonator B (4) are manufactured on the same substrate (1), so that a device manufacturing process and a device encapsulating process are simplified.
Description
Technical field
The present invention relates to a kind of structure and preparation method of novel thin film thermoelectric converter, particularly heating resistor and micro-bridge resonator make structure and the preparation method of resonant mode film thermoelectric converter on the same substrate, belong to microelectromechanical systems (MEMS) field.
Background technology
DC voltage unit is determined by Josephson's voltage natural reference, and tracing to the source of alternating voltage does not also adopt natural reference or in the mode of material standard output AC voltage value, normally adopts the method for combined-voltage conversion both at home and abroad to tracing to the source of alternating voltage.The most accurate AC-DC conversion standard is realized by thermoelectric converter at present, through long-term research and use, is proved to be and has the very high degree of accuracy.
Thermoelectric converter as AC-DC conversion standard has following three kinds of main Types: unit thermoelectric converter, three-dimensional polynary thermoelectric converter and film (or plane) type thermoelectric converter.The shortcoming of unit thermoelectric converter is that the thermoelectrical potential signal exported is fainter, and three-dimensional polynary thermoelectric converter frequency of utilization narrow range, easily by electrostatic breakdown, manual operations, be not suitable for batch production, expensive.
Thermoelectric converter many employings thin film type thermoelectric converter of current use.Now widely used thin film type thermoelectric converter is primarily of heating resistor and thermoelectric pile composition.The hot junction of heating resistor and thermocouple is positioned at the Si of anisotropic etch making
3n
4/ SiO
2/ Si
3n
4insulating film upper surface, the hot junction of thermocouple is near heating resistor, and for measuring heating resistor temperature, cold junction on a silicon substrate.The shortcoming that this thermoelectric converter using thermoelectric pile as temperature-sensing element (device) is deposited has:
(1) comparatively large (the such as Cu-CuNi of the output impedance of thermoelectric pile temperature-sensing element (device)
44the output impedance of thermoelectric pile is 7K Ω), need the measuring instrument with very large input impedance to realize impedance matching.
(2) from improve thermopile temperature sensor sensitivity, reduce to consider through the angle of thermocouple to substrate heat conduction, thermocouple material needs to possess the features such as high Seebeck coefficient, low-resistivity, lower thermal conductivity.But according to graceful Forlan thatch (Wedman-Franze) law of Wei De, amassing as constant of material thermal conductivity and resistivity, is difficult to reduce thermal conductivity and resistivity simultaneously.Now widely used CuNi
44the thermal conductivity of-Cu, CuNi-NiCr, Bi-Sb thermocouple is larger, and insulation effect is undesirable, greatly heat through thermocouple leads to substrate.
(3) the thermoelectric pile material that responsiveness is higher is (as Bi, Sb, Bi
2te
3, Bi
0.5sb
1.5te
3, Sb
2te
3) the technique such as deposition, burn into stripping and the fine process poor compatibility of standard.
(4) in order to improve the responsiveness of temperature measurement sensitivity and thermoelectric converter, normal employing more than 100 measures the temperature of heating resistor to thermocouple composition thermoelectric pile, needs to make large area Si
3n
4/ SiO
2/ Si
3n
4thermal insulation film, film easily sends out wrinkle or fracture, not easily realizes stress equilibrium.
In order to overcome the shortcoming of thermoelectric pile thermometry, the F.L.Katzmann of PTB in 1997 etc. adopt the fixing resistance of two resistances on two thermistors on the heating resistor both sides be positioned on insulating film and substrate to form Wheatstone bridge, to measure the change of thermistor resistance.The resistance of thermistor is less, overcomes the shortcoming that thermocouple output impedance is high, reduces the noise of sensor, improves signal to noise ratio.Utilize the shortcoming of thermosensitive resistance measurement heating resistor temperature to be also can produce parasitic capacitance between thermistor and heating resistor, produce larger alternating current-direct current thermoelectricity transformed error.Residing for four thermistors forming Wheatstone bridge in addition, thermal environment is different, affects certainty of measurement.
A kind of structure and preparation method of the film thermoelectric converter based on micro bridge resonator has been invented before the seminar at this patent author place.Film thermoelectric converter forms primarily of heating resistor, micro bridge resonator and sealing ring.The heating resistor and the micro bridge resonator that form this film thermoelectric converter are positioned on different substrates, two difficult points below manufacture craft exists: (1) needs to adopt the modes such as electrostatic bonding, eutectic bonding or low temperature glass slurry bonding to be positioned at the heating resistor chip of various substrates together with micro bridge resonator chip bonding; (2) need to adopt the complex technologys such as through-hole interconnection to realize the electrode of micro-bridge resonator extraction., there is certain difficulty in the two all more complicated on technical implementation way.
Summary of the invention
The object of the invention is to invent a kind of novel resonant mode film thermoelectric converter, to simplify device making technics and packaging technology.
For achieving the above object, the technical solution adopted in the present invention is: film thermoelectric converter is made up of the heating resistor (2) be produced on same substrate (1), micro-bridge resonator A (3), micro-bridge resonator B (4).The heat producing also radiation after heating resistor (2) energising causes micro-bridge resonator A (3) temperature to raise, and its axial compression stress increases or tension declines, and the resonant frequency of micro-bridge resonator A (3) is declined.And micro-bridge resonator B (4) does not experience the heat of heating resistor (2) radiation, its resonant frequency is only by the impact of substrate and environment temperature, and by measuring micro-bridge resonator A (3), the difference of micro-bridge resonator B (4) resonant frequency can reflect the size being carried in input voltage on heating resistor (2) or electric current.
Heating resistor (2) involved in the present invention and micro-bridge resonator A (3), micro-bridge resonator B (4) the resonant mode film thermoelectric converter be produced on same substrate (1) can adopt following methods make and encapsulate:
[a] successively adopts thermal oxidation method and low-pressure chemical vapor phase deposition method to make silica (10) and silicon nitride film (11), as the structural material of micro-bridge resonator at silicon chip surface;
[b] low-pressure chemical vapor phase deposition method makes polysilicon membrane (12), and in polysilicon membrane diffused with boron atom, photoetching combines with etching technics and makes polysilicon resistance bar, as excitation resistance (5) and detection resistance (6) of micro-bridge resonator A (3), micro-bridge resonator B (4);
[c] front side of silicon wafer deposit NiCrSi film (13), photoetching heating resistor (2) figure, the mixed solution of cerous sulfate and nitric acid erodes away the figure of heating resistor (2), removes photoresist;
[d] deposit aluminium film (14), photoetching lead-in wire (7) and pad (8) figure, corrode in phosphoric acid solution not by the aluminium that photoresist is protected, remove photoresist, alloying;
[e] is in front side of silicon wafer photoetching forming tank (9), dry etching is exposed to silicon nitride film (11) in forming tank (9) and silica membrane (10), also can adopt slowly-releasing hydrofluoric acid solution wet etching silica membrane (10);
[f] scribing;
[g] dry etching silicon, silicon while longitudinally etching the silicon in forming tank (9) below lateral etching micro-bridge resonator A (3), micro-bridge resonator B (4), release micro-bridge resonator A (3), micro-bridge resonator B (4), remove photoresist;
[h], by encapsulating package and cover plate front baking, carries out thermal desorption degasification, adopts eutectic bonding technology by chips welding on shell pedestal, bonding wire, finally sealing cap in vacuum system between the pin on chip on pad and shell.
Film thermoelectric converter involved in the present invention has the following advantages: heating resistor (2) and micro-bridge resonator A (3) are produced on same substrate (1), simplify device making technics and packaging technology.By measuring micro-bridge resonator A (3), the difference of micro-bridge resonator B (4) resonant frequency can reflect the size being carried in input voltage on heating resistor (2) or electric current, can eliminate environment temperature and the impact of underlayer temperature change on measurement result.
Accompanying drawing explanation
Fig. 1 is the structural representation of New Resonance Type film thermoelectric converter.
Fig. 2 is New Resonance Type film thermoelectric converter fundamental diagram.Heating resistor (2) passes to alternating voltage (or electric current) and to produce afterwards and the heat of radiation causes micro-bridge resonator A (3) temperature to raise, its axial compression stress increases or tension declines, and the resonant frequency of micro-bridge resonator A (3) is declined.And micro-bridge resonator B (4) does not experience the heat of heating resistor (2) radiation, its resonant frequency is only subject to the impact of substrate and environment temperature, reflects the size of alternating voltage or the electric current be carried on heating resistor (2) by the difference of measurement micro-bridge resonator A (3), micro-bridge resonator B (4) resonant frequency.And then pass to DC voltage (or electric current) at heating resistor (2), regulate the size of DC voltage (or electric current), when making the difference of micro-bridge resonator A (3) and micro-bridge resonator B (4) resonant frequency and pass into alternating voltage (or electric current), the difference of resonant frequency is equal, then the size of this DC voltage (or electric current) is the virtual value of alternating voltage (or electric current).
Fig. 3 is the fabrication processing figure of the New Resonance Type film thermoelectric converter as the embodiment of the present invention.
In accompanying drawing:
1-substrate 2-heating resistor 3-micro-bridge resonator A
4-micro-bridge resonator B5-encourages resistance 6-to detect resistance
7-aluminum steel 8-pad 9-forming tank
10-silica membrane 11-silicon nitride film 12-polysilicon membrane
13-nickel chromium triangle silicon thin film 14-aluminium film
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention will be further described, but be not limited to this embodiment.
Embodiment:
Utilize technical scheme of the present invention to make a kind of heating resistor (2) and micro-bridge resonator A (3), micro-bridge resonator B (4) and be produced on resonant mode film thermoelectric converter on same substrate (1).Its fabrication processing is as follows:
[1] substrate (1) is (100) face, resistivity 1 ~ 10 Ω cm, twin polishing N-type silicon chip (see accompanying drawing 3 [1]);
[2] thermal oxide, growth 600nm thick silicon dioxide film (10) (see accompanying drawing 3 [2]);
[3] low-pressure chemical vapor phase deposition method (LPCVD) deposition silicon nitride film (11), thickness 300nm (see accompanying drawing 3 [3]);
[4] low-pressure chemical vapor phase deposition polysilicon membrane (12), thickness 600nm, utilize diffusion technique to polysilicon membrane doped with boron atom, square resistance reaches 200 Ω/, 9 DEG C, anneal in nitrogen atmosphere 30min (see accompanying drawing 3 [4]);
[5] photoetching polysilicon resistance shape, dry etching goes out to encourage resistance (5) and detects resistance (6) (see accompanying drawing 3 [5]);
[6] magnetron sputtering technique deposit NiCrSi film (13), thickness 200nm (see accompanying drawing 3 [6]);
[7] photoetching heating resistor (2) shape, cerous nitrate solution (cerous sulfate 15g, 70%HNO
3solution 15ml, H
2o100ml) the NiCrSi film (13) that under normal temperature, wet etching is protected without photoresist, is formed heating resistor (2) (see accompanying drawing 3 [7]);
[8] Magnetron Sputtered Al film (14), thickness 700nm (see accompanying drawing 3 [8]);
[9] photoetching aluminum steel (7) and pad (8) figure, the aluminium film (14) without photoresist protection is corroded in 7 DEG C of phosphoric acid solutions, make aluminum steel (7) and pad (8), 4 DEG C, alloying 30min (see accompanying drawing 3 [9]) in nitrogen atmosphere;
[10] front lighting carves the shape of forming tank (9), silicon nitride film (11) in the forming tank (9) that dry etching exposes, uses slowly-releasing hydrofluoric acid solution wet etching silica membrane (10) (see accompanying drawing 3 [10]) afterwards;
[11] scribing, scribing depth ratio silicon wafer thickness is little 200 μm;
[12] silicon substrate (1) below dry etching insulating film, until micro-bridge resonator A (3), micro-bridge resonator B (4) discharge (see accompanying drawing 3 [11]) completely;
[13] by encapsulating package and cover plate front baking, carry out thermal desorption degasification, use Au-Ge solder, adopt eutectic bonding technology by the chip attach district of chip attach to shell pedestal, ultrasonic gold wire bonder is used to carry out wire bonding, connecting lead wire between chip bonding pad is with shell pin, finally realizes vacuum end cap in vacuum chamber.
Obviously, above-mentioned explanation is not restriction of the present invention, and the present invention is also not limited in above-mentioned citing, and the change that those skilled in the art do in essential scope of the present invention, remodeling, interpolation or replacement also should belong to protection scope of the present invention.
Claims (3)
1. a New Resonance Type film thermoelectric converter, is characterized in that: film thermoelectric converter is made up of the heating resistor (2) be produced on same substrate (1), micro-bridge resonator A (3) and micro-bridge resonator B (4); The difference of micro-bridge resonator A (3), micro-bridge resonator B (4) resonant frequency reflects the size being carried in input voltage on heating resistor (2) or electric current.
2. the feature of resonant mode film thermoelectric converter according to claim 1 is: heating resistor (2) and micro-bridge resonator A (3), micro-bridge resonator B (4) are produced on same substrate (1), simplify device making technics and packaging technology.
3. resonant mode film thermoelectric converter according to claim 1, is characterized in that: adopt following processing step make and encapsulate:
[a] successively adopts thermal oxidation method and low-pressure chemical vapor phase deposition method to make silica (10) and silicon nitride film (11), as the structural material of micro-bridge resonator at silicon chip surface;
[b] low-pressure chemical vapor phase deposition method makes polysilicon membrane (12), and in polysilicon membrane diffused with boron atom, photoetching combines with etching technics and makes polysilicon resistance bar, as excitation resistance (5) and detection resistance (6) of micro-bridge resonator A (3), micro-bridge resonator B (4);
[c] front side of silicon wafer deposit NiCrSi film (13), photoetching heating resistor (2) figure, the mixed solution of cerous sulfate and nitric acid erodes away the figure of heating resistor (2), removes photoresist;
[d] deposit aluminium film (14), photoetching lead-in wire (7) and pad (8) figure, corrode in phosphoric acid solution not by the aluminium that photoresist is protected, remove photoresist, alloying;
[e] is in front side of silicon wafer photoetching forming tank (9), dry etching is exposed to silicon nitride film (11) in forming tank (9) and silica membrane (10), also can adopt slowly-releasing hydrofluoric acid solution wet etching silica membrane (10);
[f] scribing;
[g] dry etching silicon, silicon while longitudinally etching the silicon in forming tank (9) below lateral etching micro-bridge resonator A (3), micro-bridge resonator B (4), release micro-bridge resonator A (3), micro-bridge resonator B (4), remove photoresist;
[h], by encapsulating package and cover plate front baking, carries out thermal desorption degasification, adopts eutectic bonding technology by chips welding on shell pedestal, bonding wire, finally sealing cap in vacuum system between the pin on chip on pad and shell.
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| CN201510564464.XA CN105236344A (en) | 2015-09-01 | 2015-09-01 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449960A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator |
| CN109987570A (en) * | 2019-03-29 | 2019-07-09 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam |
-
2015
- 2015-09-01 CN CN201510564464.XA patent/CN105236344A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449960A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator |
| CN106449960B (en) * | 2016-07-01 | 2018-12-25 | 中国计量大学 | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter |
| CN109987570A (en) * | 2019-03-29 | 2019-07-09 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam |
| CN109987570B (en) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method |
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