CN106449960A - Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator - Google Patents
Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator Download PDFInfo
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The present invention discloses a structure of a thin-film thermoelectric converter based on an electrostatic excitation/capacitance detection micro-bridge resonator and a manufacturing method of the thin-film thermoelectric converter based on the electrostatic excitation/capacitance detection micro-bridge resonator. The thin-film thermoelectric converter is composed of a heating resistor (2), a double-end fixing strutbeam (3), an excitation electrode (4) and a detection capacitor (5) which are manufactured on a same silicon slice (1), The heat generated and radiated after the heating resistor (2) is electrified causes the temperature of the double-end fixing strutbeam (3) to rise, and further the axial stress of the double-end fixing strutbeam (3) changes, and finally the resonant frequency of the double-end fixing strutbeam (3) declines. By measuring the change of the resonant frequency of the double-end fixing strutbeam (3), an input voltage or current loaded on the heating resistor (2) can be measured. The thin-film thermoelectric converter of the present invention has the following advantages that: the heating resistor (2), the double-end fixing strutbeam (3), the excitation electrode (4) and the detection capacitor (5) are manufactured on the same silicon slice (1), so that a device packaging technology is simplified.
Description
Technical field
The present invention relates to a kind of film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator, particularly
Adding thermal resistance, two-end fixed beam, exciting electrode and detection electric capacity are produced on the resonant mode film thermoelectric converter on same silicon chip
Structure and preparation method, belong to microelectromechanical systems (MEMS) field.
Background technology
Alternating voltage (stream) standard is one of basic electricity standard, can be by the exchange of 10Hz～1MHz by this standard
The metering of voltage (or electric current) is traceable to uncertainty and is better than 10-8Josephson's direct current quantum voltage reference.To alternating voltage
Trace to the source be typically with combined-voltage conversion method, carried out with standard DC voltage by the virtual value of alternating voltage
Relatively, determine the value of alternating voltage with the value of DC voltage.The most accurate AC-DC conversion standard is by film at present
Thermoelectric converter is realized.
Film thermoelectric converter is mainly made up of the adding thermal resistance and detector unit being produced on insulating film.Exchange
Voltage (or electric current) and DC voltage (or electric current) are applied in adding thermal resistance successively in turn, produce Joule heat and make adding thermal resistance
Temperature raises, the temperature of temperature sensor measurement adding thermal resistance, compares the Joule heat of their generations it is possible to obtain alternating voltage
(or electric current) produces the size of thermal power.For preferable thermoelectric converter, the AC and DC voltage of constant power applies successively
At identical adding thermal resistance two ends, temperature sensor output voltage should also be as equal.
In film thermoelectric converter, adopt thermoelectric pile the detector unit of detection adding thermal resistance temperature more, also adopt
Report with thermistor.The mode that thermoelectric pile measures adding thermal resistance temperature has that output impedance is big, insulation effect is undesirable, portion
Point heat can shortcoming through thermocouple leads to substrate.During using thermosensitive resistance measurement adding thermal resistance temperature, thermistor itself
Also produce heat, can affect adding thermal resistance is produced with the measurement of heat.In addition, the signal of both temperature elements output is simulation
Signal.In order to reduce adding thermal resistance heat through heat transfer from temperature sensor to substrate, improve temperature sensor detectivity,
Reduce the AC-DC conversion error of thermoelectric converter, propose one kind before us by adding thermal resistance, micro bridge resonator and sealing
The film thermoelectric converter that ring group becomes.Adding thermal resistance and micro bridge resonator are produced on different silicon chips, need by anode
Bonding or glass solder Sealing Technology are encapsulated in making the silicon chip having adding thermal resistance with making the silicon chip having micro bridge resonator
Together, there is certain technical difficulty.
Content of the invention
It is an object of the invention to a kind of thin film thermoelectric conversion based on static excitation/capacitance detecting micro-bridge resonator of invention
The structure of device and preparation method.Adding thermal resistance and micro-bridge resonator are produced on same silicon chip, to simplify device packaging technology.
For achieving the above object, the technical solution adopted in the present invention is：Film thermoelectric converter is by being produced on same silicon
Adding thermal resistance (2) on piece (1), two-end fixed beam (3), exciting electrode (4) and detection electric capacity (5) composition.Two-end fixed beam
(3), exciting electrode (4) and detection electric capacity (5) composition micro-bridge resonator (6).Film thermoelectric converter by body micromechanical process and
The mixing micromechanical process of surface micromechanical process composition makes, and wherein adding thermal resistance (2) silicon materials below adopt body microcomputer
Tool technique from back side wet etching to avoid the heat transfer to substrate for the heat, between two-end fixed beam (3) and adding thermal resistance (2)
Amorphous silicon membrane (16) adopts surface micromechanical process from side wet etching to discharge two-end fixed beam (3).
The work of the film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator involved in the present invention is former
Reason is：Micro-bridge resonator (6) is worked using static excitation, capacitor vibration pick-up mode, by the upper loading of exciting electrode (4) and both-end
Clamped beam (3) intrinsic frequency identical ac signal is at resonant condition, detects that both-end is clamped by detecting electric capacity (5)
The vibration frequency signal of beam (3).The heat producing after adding thermal resistance (2) energising and radiating causes two-end fixed beam (3) temperature liter
Height, and then change the axial stress of two-end fixed beam (3), so that the resonant frequency of two-end fixed beam (3) is reduced.By measurement
The change of the resonant frequency of two-end fixed beam (3) just can measure the input voltage being carried in adding thermal resistance (2) or electric current
Size.
Involved in the present invention based on the film thermoelectric converter of static excitation/capacitance detecting micro-bridge resonator can adopt with
Lower section method makes and encapsulates：
【1】Using thermal oxidation method in the two-sided silicon dioxide thin film growth of silicon chip (1) (7).
【2】Nitrogenized in the two-sided deposit LPCVD of silica membrane (7) using low-pressure chemical vapor phase deposition (LPCVD) technique
Silicon thin film (8).
【3】Front side of silicon wafer sputtering NiCrSi film (9), photoetching adding thermal resistance (2) figure, corrodes and adding thermal resistance (2).
【4】Photoetching exciting electrode bottom electrode (10), detection capacitor lower electrode (11), exciting electrode bottom electrode pad (12),
Detection capacitor lower electrode pad (13) and the figure of adding thermal resistance pad (14), successively sputtering titanium film and gold thin film, titanium film
It is gold thin film and the adhesion layer of lpcvd silicon nitride film (8), stripping technology obtains exciting electrode bottom electrode (10), detection electric capacity
Bottom electrode (11), exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13) and adding thermal resistance pad (14).
【5】Plasma enhanced CVD (PECVD) technology successively deposits ground floor PECVD silicon nitride film
(15), amorphous silicon membrane (16) and second layer PECVD silicon nitride film (17), respectively as【12】Corrosion in step process is covered
Cover the structural material of layer, sacrifice layer and two-end fixed beam (3).
【6】Photoetching exciting electrode Top electrode (18), detection electric capacity Top electrode (19), exciting electrode Top electrode pad (29) and
The figure of detection electric capacity Top electrode pad (21), sputtering titanium film and gold thin film, stripping technology obtains exciting electrode Top electrode
(18), detection electric capacity Top electrode (19), exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21).
【7】Plasma enhanced CVD (PECVD) fabrication techniques third layer PECVD silicon nitride film again
(22), this film and【5】Second layer PECVD silicon nitride film (17) making in step process is the knot of two-end fixed beam (3)
Structure material.
【8】In front side of silicon wafer photoetching forming tank (23), using in sustained release hydrofluoric acid solution wet etching and dry etching
At least one method removes the third layer PECVD silicon nitride film (22) being exposed in forming tank (23), second layer PECVD nitridation
Silicon thin film (17).
【9】In front side of silicon wafer photoetching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13), heating electricity
The figure of anti-pad (14).Dry etching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13) and heating
Resistance pad (14) third layer PECVD silicon nitride film (22) above, second layer PECVD silicon nitride film (17), non-crystalline silicon
Film (16), ground floor PECVD silicon nitride film (15).
【10】Figure in front side of silicon wafer photoetching exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21)
Shape.Dry etching exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21) third layer PECVD nitrogen above
SiClx film (22).
【11】Back side photoetching, forms back of the body corrosion window (24), successively using dry etching and sustained release hydrofluoric acid solution wet method
Erosion removal carries on the back lpcvd silicon nitride film (8) and silica membrane (7) in corrosion window (24), front protecting, respectively to different
Property corrosive liquid in corrosion be located at the back of the body corrosion window in, adding thermal resistance (2) below portion silicon substrate.
【12】Scribing.
【13】Amorphous silicon membrane (16) between wet etching two-end fixed beam (3) and adding thermal resistance (2) and to be located at the back of the body rotten
Fenetre mouth (24) is interior, adding thermal resistance (2) remaining silicon substrate below.
【14】Burst, chip is welded on shell pedestal eutectic bonding technology, drawing on pad and shell on chip
Bonding wire between pin, finally sealing cap in a vacuum chamber.
Wherein,【4】The exciting electrode bottom electrode (10) and that step process makes【6】On the exciting electrode that step process makes
Electrode (18) composition exciting electrode (4), the【4】The detection capacitor lower electrode (11) and that step process makes【6】Step process makes
Detection electric capacity Top electrode (19) composition detection electric capacity (5).
Involved in the present invention being had based on the film thermoelectric converter of static excitation/capacitance detecting micro-bridge resonator is following
Advantage：Adding thermal resistance (2), two-end fixed beam (3), exciting electrode (4) and detection electric capacity (5) are produced on same silicon chip (1), letter
Change device packaging technology.
Brief description
Fig. 1 is the structural representation of the film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator and cuts
Face figure.
Fig. 2 is that the thin film thermoelectric based on static excitation/capacitance detecting micro-bridge resonator converts as the embodiment of the present invention
The fabrication processing figure of device.
In accompanying drawing：
1- silicon chip 2- adding thermal resistance
3- two-end fixed beam 4- exciting electrode
5- detects electric capacity 6- micro-bridge resonator
7- silica membrane 8-LPCVD silicon nitride film
9-NiCrSi film 10- exciting electrode bottom electrode
11- detects capacitor lower electrode 12- exciting electrode bottom electrode pad
13- detects capacitor lower electrode pad 14- adding thermal resistance pad
15- ground floor PECVD silicon nitride film 16- amorphous silicon membrane
17- second layer PECVD silicon nitride film 18- exciting electrode Top electrode
19- detects electric capacity Top electrode 20- exciting electrode Top electrode pad
21- detects electric capacity Top electrode pad 22- third layer PECVD silicon nitride film
23- forming tank 24- carries on the back corrosion window
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but is not limited to this embodiment.
Embodiment：
Film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator involved in the present invention, its making
Technological process is as follows：
【1】Silicon chip (1) is (100) face, resistivity 1～10 Ω cm, twin polishing N-type silicon chip, 400 microns of thickness (see
Accompanying drawing 2 [1]).Using thermal oxidation method in silicon chip (1) superficial growth silica membrane (7), 1100 DEG C of temperature, time 36min,
Thickness 600nm (see accompanying drawing 2 [2]).
【2】Thin in silica membrane (7) surface deposition lpcvd silicon nitride using low-pressure chemical vapor phase deposition (LPCVD)
Film (8), thickness 300nm.(see accompanying drawing 2 [3])
【3】Front side of silicon wafer sputtering NiCrSi film (9), thickness 70nm (see accompanying drawing 2 [4]).Photoetching adding thermal resistance (2) figure
Shape, the NiCrSi film (9) that in cerous nitrate solution, wet etching is protected without photoresist, produce adding thermal resistance (2), acetone goes
Glue (see accompanying drawing 2 [5]).
【4】Stripping technology photoetching exciting electrode bottom electrode (10), detection capacitor lower electrode (11), the weldering of exciting electrode bottom electrode
Disk (12), detection capacitor lower electrode pad (13) and adding thermal resistance pad (14) figure, successively sputtering 40nm titanium film with
200nm gold thin film, titanium film, as the adhesion layer of gold thin film and lpcvd silicon nitride film (8), is removed photoresist in acetone, stripping obtains
Exciting electrode bottom electrode (10), detection capacitor lower electrode (11), exciting electrode bottom electrode pad (12), detection capacitor lower electrode weldering
Disk (13) and adding thermal resistance pad (14).(see accompanying drawing 2 [6])
【5】Plasma enhanced CVD (PECVD) technology successively deposit the【12】As corrosion in step process
Ground floor PECVD silicon nitride film (15) of masking layer, the amorphous silicon membrane (16) as sacrifice layer and as two-end fixed beam
(3) second layer PECVD silicon nitride film (17) of structural material.(see accompanying drawing 2 [7])
【6】Stripping technology photoetching exciting electrode Top electrode (18), detection electric capacity Top electrode (19), the weldering of exciting electrode Top electrode
Disk (20) and the figure of detection electric capacity Top electrode pad (21), successively sputtering 40nm titanium film and 200nm gold thin film, in acetone
Glue, peels off and obtains exciting electrode Top electrode (18), detection electric capacity Top electrode (19), exciting electrode Top electrode pad (20) and detection
Electric capacity Top electrode pad (21).(see accompanying drawing 2 [8])
【7】Plasma enhanced CVD (PECVD) fabrication techniques third layer PECVD silicon nitride film again
(22), this film and【5】Second layer PECVD silicon nitride film (17) making in step process is the knot of two-end fixed beam (3)
Structure material.(see accompanying drawing 2 [9])
【8】In front side of silicon wafer photoetching forming tank (23), using in sustained release hydrofluoric acid solution wet etching and dry etching
At least one method removes the third layer PECVD silicon nitride film (22) being exposed in forming tank (23), second layer PECVD nitridation
Silicon thin film (17), acetone removes photoresist.(see accompanying drawing 2 [10])
【9】In front side of silicon wafer photoetching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13), heating electricity
The figure of anti-pad (14).Dry etching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13) and heating
Resistance pad (14) third layer PECVD silicon nitride film (22) above, second layer PECVD silicon nitride film (17), non-crystalline silicon
Film (16), ground floor PECVD silicon nitride film (15).(see accompanying drawing 2 [11])
【10】Figure in front side of silicon wafer photoetching exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21)
Shape.Dry etching exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21) third layer PECVD nitrogen above
SiClx film (22), acetone removes photoresist.(see accompanying drawing 2 [12])
【11】Back side photoetching, forms back of the body corrosion window (24), successively using dry etching and sustained release hydrofluoric acid solution wet method
Erosion removal carries on the back lpcvd silicon nitride film (8) and silica membrane (7) in corrosion window (24).Resistance to KOH is rotten for front coating
The AR-PC504 glue of erosion, in anisotropy KOH corrosive liquid, wet etching is in back of the body corrosion window, adding thermal resistance (2) lower face
Divide silicon substrate, remove photoresist in trichloro ethylene.(see accompanying drawing 2 [13])
【12】Scribing, 250 μm of scribing depth.
【13】With KOH solution wet etching front forming tank (23) and two-end fixed beam (3) amorphous silicon membrane below
(16), in back of the body corrosion window, adding thermal resistance (2) remaining silicon substrate below.(see accompanying drawing 2 [14])
【14】Burst, encapsulating package and cover plate front baking is carried out thermal desorption degasification, is welded chip using eutectic bonding technology
It is connected on shell pedestal, bonding wire between the pin on pad and shell on chip, finally sealing cap in vacuum system.
Obviously, described above is not the restriction of the present invention, and the present invention is also not limited to the example above, the art
Technical staff done in the essential scope of the present invention change, remodeling, add or replace, also should belong to the protection of the present invention
Scope.
Claims (4)
1. a kind of film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator it is characterised in that：Thin film thermoelectric
Converter is by the adding thermal resistance (2) being produced on same silicon chip (1), two-end fixed beam (3), exciting electrode (4) and detection electric capacity
(5) form.
2. the spy of the film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator according to claim 1
Levy and be：Two-end fixed beam (3), exciting electrode (4) and detection electric capacity (5) micro-bridge resonator (6) that forms adopt static excitation,
Capacitor vibration pick-up mode works, by exchanging telecommunications in upper loading of exciting electrode (4) with two-end fixed beam (3) intrinsic frequency identical
Number it is at resonant condition, detection electric capacity (5) detects the vibration signal of two-end fixed beam (3).
3. the spy of the film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator according to claim 1
Levy and be：The mixing micromechanical process that film thermoelectric converter is made up of body micromechanical process and surface micromechanical process makes,
Wherein adding thermal resistance (2) silicon materials below adopt body micromechanical process from back side wet etching to avoid the heat to substrate for the heat
Conduction；Sacrifice layer between two-end fixed beam (3) and adding thermal resistance (2) is amorphous silicon membrane (16), using surface micro work
Skill is from side wet etching to discharge two-end fixed beam (3).
4. the film thermoelectric converter based on static excitation/capacitance detecting micro-bridge resonator according to claim 1, it is special
Levy and be：Made using following processing step and encapsulate：
【1】Using thermal oxidation method in the two-sided silicon dioxide thin film growth of silicon chip (1) (7)；
【2】Thin in silica membrane (7) surface deposition lpcvd silicon nitride using low-pressure chemical vapor phase deposition (LPCVD) technique
Film (8)；
【3】Front side of silicon wafer sputtering NiCrSi film (9), photoetching adding thermal resistance (2) figure, corrodes and adding thermal resistance (2)；
【4】Photoetching exciting electrode bottom electrode (10), detection capacitor lower electrode (11), exciting electrode bottom electrode pad (12), detection
Capacitor lower electrode pad (13) and the figure of adding thermal resistance pad (14), successively sputtering titanium film and gold thin film, titanium film is gold
Film and the adhesion layer of lpcvd silicon nitride film (8), stripping technology obtains exciting electrode bottom electrode (10), detects electricity under electric capacity
Pole (11), exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13) and adding thermal resistance pad (14)；
【5】Successively deposit ground floor PECVD silicon nitride film (15) of plasma enhanced CVD (PECVD) technology,
Amorphous silicon membrane (16) and second layer PECVD silicon nitride film (17), respectively as【12】Corrosion masking layer in step process,
Sacrifice layer and the structural material of two-end fixed beam (3)；
【6】Photoetching exciting electrode Top electrode (18), detection electric capacity Top electrode (19), exciting electrode Top electrode pad (20) and detection
The figure of electric capacity Top electrode pad (21), sputtering titanium film and gold thin film, stripping technology obtains exciting electrode Top electrode (18), inspection
Survey electric capacity Top electrode (19), exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21)；
【7】Plasma enhanced CVD (PECVD) fabrication techniques third layer PECVD silicon nitride film again
(22), this film and【5】Second layer PECVD silicon nitride film (17) making in step process is the knot of two-end fixed beam (3)
Structure material；
【8】In front side of silicon wafer photoetching forming tank (23), using at least in sustained release hydrofluoric acid solution wet etching, dry etching
The method of kind removes the third layer PECVD silicon nitride film (22) being exposed in forming tank (23), second layer PECVD silicon nitride film
(17)；
【9】In front side of silicon wafer photoetching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13), adding thermal resistance weldering
The figure of disk (14).Dry etching exciting electrode bottom electrode pad (12), detection capacitor lower electrode pad (13) and adding thermal resistance
Pad (14) third layer PECVD silicon nitride film (22) above, second layer PECVD silicon nitride film (17), amorphous silicon membrane
(16), ground floor PECVD silicon nitride film (15)；
【10】Figure in front side of silicon wafer photoetching exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21).Dry
It is thin that method etches exciting electrode Top electrode pad (20) and detection electric capacity Top electrode pad (21) third layer PECVD silicon nitride above
Film (22)；
【11】Back side photoetching, forms back of the body corrosion window (24), successively using dry etching and sustained release hydrofluoric acid solution wet etching
Remove the lpcvd silicon nitride film (8) in back of the body corrosion window (24) and silica membrane (7), front protecting, anisotropy rot
In erosion liquid, corrosion is in back of the body corrosion window (24), adding thermal resistance (2) below portion silicon substrate；
【12】Scribing；
【13】Amorphous silicon membrane (16) between wet etching two-end fixed beam (3) and adding thermal resistance (2) and be located at back of the body corrosion window
Mouth (24) is interior, adding thermal resistance (2) remaining silicon substrate below；
【14】Burst, chip is welded on shell pedestal eutectic bonding technology, the pin on pad and shell on chip it
Between bonding wire, finally sealing cap in a vacuum chamber.
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| CN109987570A (en) * | 2019-03-29 | 2019-07-09 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam |
| CN111721469A (en) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | High-sensitivity miniature Pirani gauge |
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| CN106449960B (en) | 2018-12-25 |
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