CN109987570A - Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam - Google Patents
Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam Download PDFInfo
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- CN109987570A CN109987570A CN201910279116.6A CN201910279116A CN109987570A CN 109987570 A CN109987570 A CN 109987570A CN 201910279116 A CN201910279116 A CN 201910279116A CN 109987570 A CN109987570 A CN 109987570A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0032—Structures for transforming energy not provided for in groups B81B3/0021 - B81B3/0029
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
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Abstract
The invention discloses thermoelectric converter structures and its manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam.Thermoelectric converter is made of the resonance beam chip (1) and upper cover plate (2) being bonded together.Adding thermal resistance (4) is produced on the insulating film (5) of upper cover plate (2).The material of main part of resonance beam (3) is monocrystalline silicon, using electromagnetic excitation and electromagnetic detection mode, production has excitation wire (6) and pick-up conducting wire (7) thereon, is produced on the Pyrex piece (9) with good thermo-insulation properties.One, which is provided, to resonance beam (3) using permanent magnet is parallel to chip surface and the magnetic field vertical with resonance beam (3).When adding thermal resistance (4) is passed through DC voltage (or electric current), the resonance frequency variable quantity of resonance beam (3) is equal with the resonance frequency variable quantity of resonance beam (3) when being passed through alternating voltage (or electric current), DC voltage (or electric current) is exactly the virtual value of alternating voltage (or electric current).Thermoelectric converter according to the present invention has the advantage that resonance beam (3) quality factor are high, residual stress is small.
Description
Technical field
The present invention relates to a kind of thermoelectric converter structure and manufacturing methods, are based particularly on electromagnetic excitation monocrystalline silicon resonance beam
Thermoelectric converter structure and manufacturing method, belong to microelectromechanical systems (Micro-Electro-Mechanical
Systems, MEMS) field.
Background technique
Alternating voltage (or electric current) benchmark is the benchmark measurement instrument in national alternating voltage (or electric current) transmission of quantity value, load
The comparison work of the China Fu Zhe alternating voltage (or electric current) benchmark and alternating voltage (or electric current) benchmark in the world, and exchange function
The basis of rate and electric energy measurement.
Current alternating voltage (or electric current) benchmark most accurate in the world is realized by thermoelectric converter.Thermoelectric (al) inversion
Device is mainly made of the adding thermal resistance and temperature detecting element that are produced on insulating film.Alternating voltage (or electric current) and direct current
Pressure (or electric current) is successively applied in adding thermal resistance in turn, generates Joule heat and adding thermal resistance temperature is increased, temperature detection member
Part measures the temperature of adding thermal resistance, compares their output signal, so that it may obtain the virtual value of alternating voltage (or electric current).
In thermoelectric converter, the temperature of adding thermal resistance is measured frequently with thermoelectric pile.Heat based on thermoelectric pile thermometry
Electric transducer has the disadvantage in that the output impedance of (1) thermoelectric pile temperature-sensing element (device) is larger, and measuring instrument must have very big
Input impedance be just able to achieve impedance matching.(2) capacitive coupling between adding thermal resistance and thermoelectric pile hot end increases alternating current-direct current
Heat to electricity conversion error.(3) angle of heat is conducted to substrate through thermoelectric pile from the sensitivity of raising thermoelectric pile sensitive temperature, reduction
The features such as consideration, thermoelectric pile material needs to have high Seebeck coefficient, low-resistivity, lower thermal conductivity.But according to Wei Deman-Forlan
The product of thatch (Wedman-Franze) law, material thermal conductivity and resistivity is constant, it is difficult to while reducing thermal conductivity and resistance
Rate.(4) higher thermoelectric pile material (such as Bi, Sb, Bi of response rate2Te3、Bi0.5Sb1.5Te3、Sb2Te3) deposit, burn into removing
Etc. techniques and standard fine process poor compatibility.(5) in order to improve the sound of temperature measurement sensitivity and thermoelectric converter
Should rate, frequently with more than 100 to thermocouple composition thermoelectric pile measurement adding thermal resistance temperature, need to make large area insulating film,
Film easily sends out wrinkle or fracture, is not easy to realize stress equilibrium, and limits the freedom degree of heater design.
Compared to thermoelectric pile formula thermoelectric converter, resonant mode thermoelectric converter uses contactless temperature sensing mode, temperature
Degree sensing element is resonator, using the resonance frequency of resonator to the highly sensitive feature measurement adding thermal resistance of axial thermal stress
Temperature.This thermometric mode reduce adding thermal resistance heat through heat transfer from temperature sensor to substrate, avoid because thermoelectricity imitate
It answers, AC-DC conversion error caused by parasitic capacitance and dielectric loss.Resonator works are in mechanical resonant state, the frequency of output
Signal is not influenced by circuit drift and noise, measurement accuracy, signal-to-noise ratio and high resolution, and strong antijamming capability is not required to ask a price
The nanovoltmeter of lattice valuableness, as long as common FPGA acquires output signal.
Polish Silesian University Marian Kampik et al. proposes a kind of quartz crystal thermoelectric converter, benefit
Use the quartz oscillator with frequency output characteristics as temperature-sensing element, although quartz crystal has very high quality
Factor, but there are following two disadvantages: and (1) sensitivity of thermometry is low.(2) quartz material is difficult to, when the thickness of film is less than
At tens microns, become very frangible.Brazilian State quantitative study institute G M Geronymo proposes a kind of rate-adaptive pacemaker
Thermoelectric converter is made of the surface mount resistor as heating element and the thermistor as temperature-sensing element.It is this
The oscillating circuit quality factor of the resonant mode thermoelectric converter of discrete component composition are very low.It is proposed before this seminar a variety of humorous
(patent No.: 200810060614.3,201610541376.2), resonance beam is by silica, silicon nitride for vibration formula thermoelectric converter
Equal films composition, has good heat-insulating property, but resonance beam residual stress is big, and resonance frequency drift is big, after vibrating for a long time
Stress relaxation phenomenon can be generated, the stability of closed loop autonomous system is destroyed.
Summary of the invention
It is an object of the invention to invent a kind of thermoelectric converter of based single crystal silicon resonance beam, the material of main part of resonance beam
For monocrystalline silicon, there is very high quality factor and lesser residual stress, be significantly reduced heat to electricity conversion error and alternating current-direct current turns
Change error.
To achieve the above object, the technical scheme adopted by the invention is that: thermoelectric converter is by the resonance that is bonded together
Beam chip and upper cover plate composition.Adding thermal resistance is produced on the insulating film of upper cover plate.The material of main part of resonance beam is monocrystalline silicon,
It is produced on the Pyrex with good thermo-insulation properties.Resonance beam uses electromagnetic excitation and electromagnetic detection mode, makes thereon
Make excitation wire and pick-up conducting wire, provides one to resonance beam using permanent magnet and be parallel to chip surface and vertical with resonance beam
Magnetic field.
The working principle of thermoelectric converter according to the present invention based on electromagnetic excitation monocrystalline silicon resonance beam is: in resonance
When passing through ac signal in the excitation wire on beam, resonance beam drives pick-up conductor cutting magnetic force lines in chip normal vibration,
Pick-up conducting wire both ends will generate induced electromotive force.When frequency of alternating-current signals is identical as the intrinsic frequency of resonance beam, resonance
Beam reaches resonant state, and the amplitude of the induced electromotive force at pick-up conducting wire both ends also reaches maximum, by induced electromotive force resonance
The resonance frequency of resonance beam just can be detected in the measurement of frequency.Alternating voltage (or electric current) and DC voltage (or electric current) are successively taken turns
Stream is applied in adding thermal resistance, and the Joule heat of generation increases adding thermal resistance temperature, and the heat of radiation will cause resonance beam temperature
Degree increases, and then changes the axial stress of resonance beam, finally changes the resonance frequency of resonance beam.When be passed through DC voltage (or
Electric current) generate resonance frequency variable quantity it is equal with the resonance frequency variable quantity generated when being passed through alternating voltage (or electric current) when,
DC voltage (or electric current) is exactly the virtual value of alternating voltage (or electric current).
Following methods production can be used in thermoelectric converter according to the present invention based on electromagnetic excitation monocrystalline silicon resonance beam
And it encapsulates:
[1] fabrication processing of resonance beam chip:
1) substrate is the bonding pad of monocrystalline silicon piece and Pyrex piece, and monocrystalline silicon is thinned to design thickness.
2) photoetching resonance beam etches the silicon in forming tank.
3) insulating film is made on bonding pad surface.
4) excitation wire, pick-up conducting wire and pad are made.
5) bonding material A and graphical is deposited on substrate.
6) corrode the Pyrex below resonance beam, discharge resonance beam.
[2] fabrication processing of upper cover plate:
1) substrate is (100) face, twin polishing silicon wafer, production corrosion masking layer.
2) photoetching, the silicon of corrosion lower surface (towards resonance beam one side) is to certain depth.
3) photoetching, etching through hole.
4) insulating film is made in silicon chip surface.
5) adhesion layer, barrier layer, seed layer are sputtered in through-hole, plating is realized in hole and metallized, and through-hole interconnection is made.
6) alloy firm is sputtered in lower surface, photoetching simultaneously corrodes production adding thermal resistance.
7) getter is made in lower surface, graphically.
8) lead is made in upper cover plate surface.
9) bonding material B and graphical is deposited in lower surface.
[3] resonance beam chip and upper cover plate are bonded process:
It is put into bonder after resonance beam chip and upper cover plate alignment, the two is bonded together.
Thermoelectric converter according to the present invention based on electromagnetic excitation monocrystalline silicon resonance beam has the advantage that resonance beam
Quality factor are high, residual stress is small.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the thermoelectric converter according to the present invention based on electromagnetic excitation monocrystalline silicon resonance beam.
Fig. 2 is the thermoelectric converter resonance beam chip based on electromagnetic excitation monocrystalline silicon resonance beam as the embodiment of the present invention
The typical process flow figure at the visual angle AA ' along Fig. 1.
Fig. 3 is the thermoelectric converter upper cover plate based on electromagnetic excitation monocrystalline silicon resonance beam as the embodiment of the present invention along figure
The typical process flow figure at the visual angle BB ' in 1.
Fig. 4 is the thermoelectric converter resonance beam chip based on electromagnetic excitation monocrystalline silicon resonance beam as the embodiment of the present invention
With the schematic cross-section after upper cover plate bonding.
In attached drawing:
1- resonance beam chip 2- upper cover plate 3- resonance beam
4- adding thermal resistance 5- insulating film 6- excitation wire
7- pick-up conducting wire 8- silicon wafer 9- Pyrex piece
10- forming tank 11- insulating film 12- pad
13- bonding material A 14- corrodes masking layer 15- through-hole
16- through-hole interconnection 17- getter 18- lead
19- bonding material B 20- anchor point
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but is not limited to the embodiment.
Embodiment: it is made using manufacturing process steps provided by the present invention a kind of based on electromagnetic excitation monocrystalline silicon resonance beam
Thermoelectric converter, manufacturing process steps are as follows:
[1] fabrication processing of resonance beam chip (1):
1) substrate is the bonding pad of super flat monocrystalline silicon piece (8) and Pyrex piece (9), tetramethyl ammonium hydroxide solution corrosion
Monocrystalline silicon makes wafer thinning to 3 microns.(see attached drawing 2 [1])
2) photoetching resonance beam (3) figure, the silicon in inductively coupled plasma etching forming tank (10) is until Pyrex.
(see attached drawing 2 [2])
3) plasma enhanced chemical vapor deposition method deposits 0.5 μm of silicon-rich silicon nitride silicon fiml as insulating film in upper surface
(11).(see attached drawing 2 [3])
4) Cr/Au film, production excitation wire (6), pick-up conducting wire (7) and pad (12) are sputtered on insulating film (11).
(see attached drawing 2 [4])
5) plasma enhanced chemical vapor deposition method deposited amorphous silicon thin film is as bonding material A (13), photoetching sealing
Ring figure etches the amorphous silicon outside sealing ring.(see attached drawing 2 [5])
6) the BHF solution that being added has glycerol (40% ammonium fluoride: glycerine: 40%HF=4: 2: 1) corrodes under resonance beam (3)
The Pyrex in face discharge resonance beam (3).(see attached drawing 2 [6])
[2] fabrication processing of upper cover plate (2):
1) substrate is (100) face, twin polishing silicon wafer, and standard cleaning grows dioxy in silicon chip surface using thermal oxidation method
SiClx is as corrosion masking layer (14), thickness 600nm.(see attached drawing 3 [1])
2) corrosion window of the photoetching towards resonance beam (3) one side, sustained release hydrofluoric acid solution remove the corrosion in corrosion window
Masking layer (14).Silicon in potassium hydroxide solution corrosion window, corrosion depth are 50 μm.(see attached drawing 3 [2])
3) photoetching through-hole (15) figure, it is more vertical than high less than 5 μm, depth that deep plasma etch process produces aperture
Through silicon via (15).(see attached drawing 3 [3])
4) removal corrosion masking layer (14), standard cleaning.Thermal oxide again, 0.9 μm of silica-film thickness, low pressure
Vapour deposition process deposition silicon nitride film on silicon wafer is learned, 0.3 μm of thickness, silica membrane and silicon nitride film composition are insulated
Film (5).(see attached drawing 3 [4])
5) adhesion layer Ti, barrier layer TiN, seed layer Cu are sputtered in through-hole (15), and Cu is electroplated and realizes metallization in hole,
It makes through-hole interconnection (16).(see attached drawing 3 [5])
6) NiCrSi film, thickness 89nm are sputtered.Photoetching adding thermal resistance (4) figure, wet etching in ceric ammonium nitrate solution
NiCrSi film without photoresist protection, produces adding thermal resistance (4).(see attached drawing 3 [6])
7) lift-off technology photoetching getter (17) figure sputters titanium film, and acetone removes photoresist, and removing obtains getter.(see attached
Fig. 3 [7])
8) lift-off technology makes gold wire (18) on upper cover plate (2) surface.(see attached drawing 3 [8])
9) upper cover plate (2) sputtering gold thin film is simultaneously graphical as bonding material B (19).(see attached drawing 3 [9])
[3] resonance beam chip (1) and upper cover plate (2) are bonded process:
By bonding material B (19) of the bonding material A (13) on resonance beam chip (1) on upper cover plate (2), after alignment
Be put into eutectic bonding machine, using eutectic bonding technology by resonance beam chip (1) and upper cover plate (2) Vacuum Package together.Scribing,
Weld outer lead.(see attached drawing 4)
Obviously, above description is not limitation of the invention, and the present invention is also not limited to the example above, the art
The variations, modifications, additions or substitutions done within the essential scope of the present invention of technical staff, also should belong to protection of the invention
Range.
Claims (4)
1. the thermoelectric converter based on electromagnetic excitation monocrystalline silicon resonance beam, it is characterised in that: thermoelectric converter is by being bonded together
Resonance beam chip (1) and upper cover plate (2) composition, adding thermal resistance (4) is produced on the insulating film (5) of upper cover plate (2), resonance
The material of main part of beam (3) is monocrystalline silicon, is produced on the Pyrex piece (9) with good thermo-insulation properties, in resonance beam (3)
Production has excitation wire (6) and pick-up conducting wire (7), provides one to resonance beam (3) using permanent magnet and is parallel to chip surface simultaneously
The magnetic field vertical with resonance beam (3).
2. the thermoelectric converter according to claim 1 based on electromagnetic excitation monocrystalline silicon resonance beam, it is characterised in that: resonance
Beam (3) is worked using electromagnetic excitation and electromagnetic detection mode, is passed through exchange telecommunications in the excitation wire (6) on resonance beam (3)
Number when, resonance beam (3) drives pick-up conducting wire (7) cutting magnetic line, pick-up conducting wire (7) both ends will be produced in chip normal vibration
Raw induced electromotive force, when frequency of alternating-current signals is identical as the intrinsic frequency of resonance beam (3), resonance beam (3) reaches resonance shape
State, the amplitude of the induced electromotive force at pick-up conducting wire (7) both ends also reach maximum, pass through the measurement to induced electromotive force resonance frequency
The resonance frequency of resonance beam (3) just can be detected.
3. the thermoelectric converter according to claim 1 based on electromagnetic excitation monocrystalline silicon resonance beam, it is characterised in that: exchange
Voltage (or electric current) and DC voltage (or electric current) are successively applied in turn on adding thermal resistance (4), are generated Joule heat and to heat
Resistance (4) temperature increases, and the heat of radiation will cause resonance beam (3) temperature to increase, and then the axial direction for changing resonance beam (3) is answered
Power changes the resonance frequency of resonance beam (3)；Change the resonance frequency of resonance beam (3) when being passed through DC voltage (or electric current)
It measures with when resonance frequency variable quantity is equal when being passed through alternating voltage (or electric current), DC voltage (or electric current) is exactly alternating voltage
The virtual value of (or electric current).
4. the thermoelectric converter according to claim 1 based on electromagnetic excitation monocrystalline silicon resonance beam, it is characterised in that pass through
Following basic process steps make and encapsulate:
[1] fabrication processing of resonance beam chip (1):
1) substrate is the bonding pad of monocrystalline silicon piece (8) and Pyrex piece (9), and monocrystalline silicon piece (8) are thinned and arrive design thickness；
2) photoetching resonance beam (3) etch the monocrystalline silicon in forming tank (10)；
3) insulating film (11) are made on bonding pad surface；
4) excitation wire (6), pick-up conducting wire (7) and pad (12) are made；
5) deposit bonding material A (13) is simultaneously graphical on substrate；
6) Pyrex of corrosion resonance beam (3) below discharge resonance beam (3)；
[2] fabrication processing of upper cover plate (2):
1) substrate is (100) face, twin polishing silicon wafer, production corrosion masking layer (14)；
2) photoetching, the silicon of corrosion lower surface (towards resonance beam (3) one side) is to certain depth；
3) photoetching, etching through hole (15)；
4) insulating film (5) are made in silicon chip surface；
5) adhesion layer, barrier layer, seed layer are sputtered in through-hole (15), plating is realized in hole and metallized, and through-hole interconnection is made
(16)；
6) alloy firm is sputtered in lower surface, photoetching simultaneously corrodes production adding thermal resistance (4)；
7) getter (17) are made in lower surface, graphically；
8) lead (18) are made on upper cover plate (2) surface；
9) simultaneously graphical in lower surface deposit bonding material B (19)；
[3] resonance beam chip (1) and upper cover plate (2) are bonded process:
It is put into bonder after resonance beam chip (1) and upper cover plate (2) alignment, the two is bonded together.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944235A (en) * | 2006-11-03 | 2007-04-11 | 北京航空航天大学 | Electromagnetic-magnetoelectric type micro mechanical resonant beam structure |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| CN101566643A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof |
| CN201766561U (en) * | 2010-04-13 | 2011-03-16 | 中国计量学院 | Novel electromagnetic excitation/electromagnetic vibration pickup microbridge resonator with three-beam structure |
| CN102608355A (en) * | 2011-11-23 | 2012-07-25 | 中国计量学院 | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof |
| CN105174200A (en) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN105236344A (en) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN106449960A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator |
| CN106526229A (en) * | 2016-11-03 | 2017-03-22 | 中国计量大学 | Structure and manufacturing method of low transverse sensitivity tunnel current-type accelerometer |
-
2019
- 2019-03-29 CN CN201910279116.6A patent/CN109987570B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944235A (en) * | 2006-11-03 | 2007-04-11 | 北京航空航天大学 | Electromagnetic-magnetoelectric type micro mechanical resonant beam structure |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| CN101566643A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof |
| CN201766561U (en) * | 2010-04-13 | 2011-03-16 | 中国计量学院 | Novel electromagnetic excitation/electromagnetic vibration pickup microbridge resonator with three-beam structure |
| CN102608355A (en) * | 2011-11-23 | 2012-07-25 | 中国计量学院 | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof |
| CN105174200A (en) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN105236344A (en) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN106449960A (en) * | 2016-07-01 | 2017-02-22 | 中国计量大学 | Structure of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator and manufacturing method of thin-film thermoelectric converter based on electrostatic excitation/capacitance detection micro-bridge resonator |
| CN106526229A (en) * | 2016-11-03 | 2017-03-22 | 中国计量大学 | Structure and manufacturing method of low transverse sensitivity tunnel current-type accelerometer |
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