CN106526229A - Structure and manufacturing method of low transverse sensitivity tunnel current-type accelerometer - Google Patents
Structure and manufacturing method of low transverse sensitivity tunnel current-type accelerometer Download PDFInfo
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- CN106526229A CN106526229A CN201610971269.3A CN201610971269A CN106526229A CN 106526229 A CN106526229 A CN 106526229A CN 201610971269 A CN201610971269 A CN 201610971269A CN 106526229 A CN106526229 A CN 106526229A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
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Abstract
The invention discloses a structure and a manufacturing method of a low transverse sensitivity tunnel current-type accelerometer and belongs to the field of microelectronic mechanical systems. The low transverse sensitivity tunnel current-type accelerometer is composed of a main chip (1), an upper cover plate (2) and a lower bottom plate (3). The main chip (1) is composed of a mass block (4), a support beam (5), a lead wire bridge (6), a tunnel electrode (7), a control electrode lower electrode (8) and a frame 9). One end of the support beam (5) is fixedly supported at the side surface of the mass block (4), and the other end is fixedly supported on the inner surface of the frame (9). The central axis of the support beam (5) is in the same plane with the center of gravity of the mass block (4). A tunnel needle point (10) and a tunnel needle point electrode (11) thereof, and a control electrode upper electrode (12) are disposed on the lower surface of the upper cover plate (2) Silicon, in a region opposite to the mass block (4), on the upper surface of the lower bottom plate (3) is removed to form a recess (13), which provides space for the mass block (4) to move perpendicularly to the chip surface under the action of the Z-axis acceleration. The tunnel current-type accelerometer manufactured by the method provided by the invention is advantaged by high resolution and low transverse sensitivity.
Description
Technical field
The present invention relates to the structure and manufacture method of accelerometer, particularly a kind of low cross sensitivity tunnel current formula adds
The structure and manufacture method of velometer, belong to microelectromechanical systems (Micro-Electro-Mechanical Systems,
MEMS) field.
Background technology
Micro accelerometer is the important mechanical quantity sensor of a class.Research is begun to early in end of the sixties in last century people
Minitype silicon accelerometer.Start the large-scale production of micro accelerometer the end of the eighties.As micro accelerometer has volume
Little, lightweight, power consumption and low cost, overload capacity it is strong, easy of integration, can large-scale mass production the advantages of, not only become micro- used
Property measurement combination core parts, be also applied to rapidly wagon control, high-speed railway, robot, industrial automation, mine locating, object for appreciation
The civil areas such as tool, medical treatment.
Tunnel current formula accelerometer (also referred to as tunnelling accelerometer) based on electronic barrier tunnel-effect is earliest by U.S.
State Jet Propulsion laboratorys are proposed.Its structure is to make tunnel electrode on the mass supported in elastic construction, and another
One fixed tunnel guide is pointed into tunnel current.Required feedback voltage when maintaining tunnel current constant by measuring closed loop circuit
Size measurement acceleration signal.Using tunnel current to the high susceptibility of change in displacement detection acceleration signal, with point
The high advantage of resolution.
The elastic construction of mass is supported to be divided into according to processing technology in tunnel current formula accelerometer following several：(1)
Support beam is made by surface micromechanical process with mass, and the two thickness is equal.Such as U.S. HRL D. Lab avid
The tunnel current accelerometer that T.Chang et al. is developed supports mass by single-ended clamped cantilever beam.It is this by surface micro
The mass lighter in weight of the tunnel current formula accelerometer that technique makes, sensitivity are relatively low.(2) support beam and mass are by body
Micromechanical process is made, and support beam is located at mass surface.The one kind for example developed by Chinese Academy of Sciences's Dong's seapeak et al.
Low frequency MEMS tunnel currents formula accelerometer outside new face, supports mass, support beam to be located at mass following table using L-type beam
Face.By quick et al. the tunnel developed using body micromechanical process of micrometer/nanometer process technology National Key Laboratory of Peking University Seedling
Road electric current accelerometer, equally supports mass, the clamped lower surface in mass of support beam using L-type beam.This structure
The support beam of tunnel current formula accelerometer and the center of gravity of mass not in same plane, when mass is subject to acceleration in face
When, mass can be rotated, and the measurement for producing acceleration outside cross sensitivity, therefore opposite causes very big interference.(3) pass through
The mass that two support beams are located at surface is symmetrically bonded together by bonding techniques, forms support beam equivalent positioned at mass
The structure of neutral surface.The tunnel type accelerometer that such as Northeast USA university Paul M Zavracky et al. make is by two by L
Type beam supports the chip bonding of mass together, is equivalent to neutral surface of the support beam positioned at mass.This tunnel current formula
The complex structure of accelerometer, technology difficulty are big, and bonding face is easy to cracking.
In traditional body micromechanical process, support beam is located at mass surface, can make lead on support beam surface, use
In the extraction of tunnel current and control signal, but this structure can introduce larger intersecting axle interference and measurement error.If will prop up
Support beam is produced on the neutral surface of mass, then how to draw the electrode on mass surface is to make tunnel current formula acceleration
Another technological difficulties of meter.
It is an object of the invention to invent a kind of low cross sensitivity tunnel current formula accelerometer, X can be prevented effectively from
The intersecting axle interference that Z axis acceleration analysis is caused outside axle, Y-axis input acceleration opposite, to realize to acceleration signal high-resolution
Rate and the measurement of low cross sensitivity.
The content of the invention
It is an object of the invention to a kind of low cross sensitivity tunnel current formula accelerometer is invented, to realize to acceleration
The high-resolution of signal, low cross sensitivity measure.
For achieving the above object, the technical solution adopted in the present invention is：Described accelerometer by master chip (1), on
Cover plate (2) and lower shoe (3) composition.Wherein master chip (1) is by mass (4), support beam (5), lead bridge (6), tunnel electrode
(7), coordination electrode bottom electrode (8), framework (9) composition.One end of support beam (5) is clamped in mass (4) side, and the other end is solid
Prop up on the inside of framework (9).The axis of support beam (5) is with the center of gravity of mass (4) in same plane.Tunnel needle point (10) and its
The tunnel needlepoint electrode (11) on surface, coordination electrode Top electrode (12) are produced on upper cover plate (2) lower surface.Lower shoe (3) upper table
Face is just removed to the silicon in mass (4) region, formed pit (13), be mass (4) by Z axis acceleration in chip normal direction
Small movements provide activity space.
The operation principle of the tunnel current formula accelerometer of low cross sensitivity involved in the present invention：Mass (4) is received
During to Z axis acceleration effect, displacement is produced in Z-direction, tunnel gap also changes therewith, causes the change of tunnel current, close
Ring feedback control circuit produce feedback voltage act on coordination electrode Top electrode (12) and coordination electrode bottom electrode (8) it
Between, a feedback electrostatic force in opposite direction with mass (4) movement tendency is produced, makes mass (4) return to equilbrium position.
When maintaining tunnel current by measuring closed loop circuit, the required big I of feedback voltage obtains size and the side of Z axis acceleration signal
To.
A kind of structure of low cross sensitivity tunnel current formula accelerometer is made using technical scheme, its system
Make technique at least to comprise the following steps：
【1】The step of preparation process of master chip (1)：
1) using (100) face, twin polishing silicon chip, thickness is H, carries out standard cleaning to which.
2) corrosion masking layer 1 (14) is made in silicon chip surface.
3) metallic film 1 (15) is deposited in silicon chip upper surface, make tunnel electrode (7), coordination electrode bottom electrode (8), and
Retain the metallic film 1 (15) of bond area, for follow-up bonding technology.
4) lower surface photoetching.As shown in Fig. 3 [1], wherein Lycoperdon polymorphum Vitt graph area is the area that is corroded of corrosion masking layer 1 (14)
Domain, reservation mass (4), framework (9), mass convex corner compensation region (16), the corrosion of support beam etching mask (17) are sheltered
Layer 1 (14).
5) corrode silicon from lower surface in anisotropic etchant, corrosion depth is (H+h1)/2-h2.Wherein, h1It is support beam
(5) design thickness, h2For the design thickness of lead bridge (6).
6) upper surface photoetching, removes the corrosion masking layer 1 (14) of Lycoperdon polymorphum Vitt graphics field shown in Fig. 3 [2], retains mass
(4), the corrosion masking layer 1 (14) in lead bridge (6), framework (9) and mass convex corner compensation region (16).
7) lower surface photoetching, removes support beam etching mask (17), retains mass (4), framework (9) and mass salient angle
The corrosion masking layer 1 (14) of compensatory zone (16).
8) corrosion of silicon in anisotropic etchant, vertical etches depth are equal to (H-h1During)/2, support beam (5) reaches and sets
Meter thickness.
9) plasma enhanced chemical vapour deposition is in silicon chip lower surface deposited amorphous silicon thin film 1 (18), for under
The eutectic bonding of base plate (3).
【2】The step of preparation process of upper cover plate (2)：
1) using (100) face, twin polishing silicon chip, standard cleaning is carried out to which.
2) corrosion masking layer 2 (19) is made in silicon chip surface.
3) in the mask pattern of silicon chip lower surface photoetching tunnel needle point (10), make tunnel needle point (10).
4) make on tunnel needle point (10) and corrode masking layer 3 (20).
5) in the mask pattern of silicon chip upper surface photoetching through hole (21), remove the corrosion masking layer 2 in through hole (21) region
(19)。
6) remove the silicon in through hole (21).
7) plating metal interconnecting wires (22) in through hole (21).
8) metallic film is deposited in silicon chip lower surface, make tunnel needlepoint electrode (11) and coordination electrode Top electrode (12).
9) silicon chip upper surface deposit metallic film, photoetching are combined with etching process and make upper cover plate lead (23), drawn
The signal of telecommunication of tunnel needlepoint electrode (11) and coordination electrode Top electrode (12).
10) plasma enhanced chemical vapour deposition is in silicon chip lower surface deposited amorphous silicon thin film 2 (24).Remove tunnel
The amorphous silicon membrane 2 (24) on needle point (11) surface, retains the amorphous silicon membrane 2 (24) of bond area, for follow-up bonding technology.
【3】The step of preparation process of lower shoe (3)：
1) using (100) face, twin polishing silicon chip, standard cleaning is carried out to which.
2) upper surface photoetching, removes the silicon just to mass (4) region, and formation pit (13) is mass (4) by Z
Axle acceleration provides activity space in the small movements of chip normal direction.
3) metallic film 2 (25) is deposited, for the eutectic bonding with master chip lower surface.
【4】Three layers of bonding steps：
By the upper surface of upper cover plate (2) lower surface and lower shoe (3) respectively in the face of the upper surface and following table of master chip (1)
Face, is put into eutectic bonding machine after alignment, three is bonded together using eutectic bonding technology.
In the processing technology of low cross sensitivity tunnel current formula accelerometer involved in the present invention, described corrosion is covered
Cover layer 1 (14), corrosion masking layer 2 (19) and corrosion masking layer 3 (20) in silica membrane and silicon nitride film at least
It is a kind of.
In the processing technology of low cross sensitivity tunnel current formula accelerometer involved in the present invention, described metal foil
Film 1 (15), metallic film 2 (25) are the one kind in Ti/Pt/Au and Ti/Au leads.
In the processing technology of low cross sensitivity tunnel current formula accelerometer involved in the present invention, support beam is designed
A length of L1, a width of b1, thickness is h1, a length of L of lead bridge2, a width of b2, the thickness of lead bridge (6) is h2.Then support beam corrosion is covered
The a length of L of film (17)1+(H-h1) ctg54.7 °, support beam etching mask (17) is a width ofWherein,
r3For fast erosional surface and the ratio of (100) face corrosion rate, θ is the angle of fast erosional surface and (100) face.Lead bridge corrosion window
(26) a length of L2+2(H-h2) ctg54.7 °, width is more than b2+2(H-h2) ctg54.7 °, less than the length of side of mass.Such as Fig. 3 institutes
Show.
In the processing technology of low cross sensitivity tunnel current formula accelerometer involved in the present invention, described removal is rotten
Erosion masking layer 1 (14) is at least one of wet etching and dry etching with the method for corrosion masking layer 2 (19).
In the processing technology of low cross sensitivity tunnel current formula accelerometer involved in the present invention, master chip (1)
It is first to carry out the 4) step lower surface photoetching process and the 5) step etching process in another step of preparation process, then does the 3) step work
2) → 4) → 5) → 3) → 6) → 7) → 8) skill, that is, according to 1) → → sequence flow 9).
In the preparation process of low cross sensitivity tunnel current formula accelerometer upper cover plate (2) involved in the present invention, institute
The method in making tunnel needle point (19) stated is wet etching and the one kind in dry etching.
In the preparation process of low cross sensitivity tunnel current formula accelerometer upper cover plate (2) involved in the present invention, institute
The method of the silicon in removal through hole (21) stated is at least one of wet etching and dry etching.
The advantage of low cross sensitivity tunnel current formula accelerometer involved in the present invention is：In support beam (5)
The center of gravity of axis and mass (4) is in same plane.When by X, Y-axis acceleration, mass is only produced in X-axis, Y direction
Displacement is prevented effectively from the intersecting axle interference that X-axis, Y-axis input acceleration are caused to Z axis acceleration analysis without rotating,
To realize to acceleration signal high-resolution and the measurement of low cross sensitivity.
Description of the drawings
Fig. 1 is the three dimensional structure diagram of low cross sensitivity tunnel current formula accelerometer involved in the present invention.
Fig. 2 is the master chip structure top view of low cross sensitivity tunnel current formula accelerometer involved in the present invention.
Fig. 3 is the mask pattern of low cross sensitivity tunnel current formula accelerometer master chip involved in the present invention, its
Middle Fig. 3 [1] is the 4th of master chip (1) manufacturing process steps) mask graph of step process, Fig. 3 [2] is that master chip (1) makes work
The mask artwork of the 6) step process of the of skill step.
In Fig. 4 [1] to [8] be as the embodiment of the present invention low cross sensitivity tunnel current formula accelerometer along Fig. 2
Master chip (1) fabrication processing figure at shown AA visual angles, [9] to [18] are the low cross sensitivity as the embodiment of the present invention
Tunnel current formula accelerometer upper cover plate (2) fabrication processing figure, [19], [20] are the low cross as the embodiment of the present invention
Lower shoe (3) fabrication processing figure of sensitivity tunnel current formula accelerometer, [21] are as the low of the embodiment of the present invention
The upper cover plate (2) of cross sensitivity tunnel current formula accelerometer, master chip (1), the bonding technology flow chart of lower shoe (3).
In accompanying drawing：
1- master chip 2- upper cover plates
3- lower shoe 4- masses
5- support beam 6- lead bridges
7- tunnel electrode 8- coordination electrode bottom electrodes
9- framework 10- tunnels needle point
11- tunnels needlepoint electrode 12- coordination electrode Top electrodes
13- pits 14- corrodes masking layer 1
1 16- mass convex corner compensations region of 15- metallic films
17- support beam etching mask 18- amorphous silicon membranes 1
19- corrosion masking layer 2 20- corrosion masking layers 3
21- through hole 22- metal interconnecting wires
23- upper cover plate lead 24- amorphous silicon membranes 2
2 26- lead bridge corrosion windows of 25- metallic films
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but is not limited to the embodiment.
Embodiment：
A kind of low cross sensitivity tunnel current formula accelerometer is made using technical scheme.
Master chip (1) thickness is 380 microns.Support beam (5) length is 766 microns, and width is 100 microns, and thickness is 50
Micron.Lead bridge (6) length is 1000 microns, and width is 100 microns, and thickness is 5 microns.The making determined according to this data
Technological process is as follows：
【1】The step of preparation process of master chip (1)
1) using (100) face, twin polishing silicon chip, standard cleaning is carried out to which.
2) thermal oxide, makes the silica membrane (14) of 2 microns of thickness in silicon chip surface.(see accompanying drawing 4 [1])
3) 20nmTi/200nmAu thin film is sputtered in silicon chip upper surface, photoetching is combined with etching process making tunnel electrode
(7), coordination electrode bottom electrode (8), and retain the metallic film 1 (15) of bond area, for follow-up bonding technology.(see accompanying drawing 4
[2])
4) silicon chip upper surface protection, shown in lower surface photoetching, such as Fig. 3 [1], wherein Lycoperdon polymorphum Vitt graph area is corrosion masking layer 1
(14) the region that is corroded, the corrosion of slow release hydrofluoric acid solution is except mass (4), framework (9), mass convex corner compensation region (16)
With the corrosion masking layer 1 (14) of support beam etching mask (17).Mass convex corner compensation region (16) is square, and its center exists
At mass drift angle, a width of 330 microns.Support beam etching mask (17) is a length of 1000 microns, a width of 237 microns.Lead bridge is rotten
Fenetre mouth (26) is a length of 1000 microns, and lead bridge corrosion window (26) is a width of 631 microns.(see accompanying drawing 4 [3])
5) silicon, 210 microns of vertical etches depth are corroded from silicon chip lower surface in 40% potassium hydroxide solution.(see accompanying drawing 4
[4])
6), shown in upper surface photoetching, such as Fig. 3 [2], wherein Lycoperdon polymorphum Vitt graph area is the area that is corroded of corrosion masking layer 1 (14)
Domain, the corrosion of slow release hydrofluoric acid solution is except mass (4), lead bridge (6), framework (9) and mass convex corner compensation region (16)
Corrosion masking layer 1 (14), the mask width of lead bridge (6) is 100 microns.Mass convex corner compensation region (16) is square,
Its center at mass drift angle, a width of 330 microns.(see accompanying drawing 4 [5])
7) silicon chip upper surface protection, lower surface photoetching, slow release hydrofluoric acid solution corrosion resistant support beam etching mask (17) retain
Mass (4), framework (9) and the corrosion masking layer 1 (14) in mass convex corner compensation region (16).(see accompanying drawing 4 [6])
8) corrosion of silicon in iodine supersaturation potassium hydroxide solution, solution is according to 1mol iodine：2mol potassium iodide：1L40% hydrogen-oxygens
Change potassium solution to be prepared.When vertical etches depth is equal to 165 microns, support beam (5) thickness is 50 microns, and lead bridge (6) is thick
Spend for 5 microns.(see accompanying drawing 4 [7])
9) plasma enhanced chemical vapour deposition deposits 0.5 micron of amorphous silicon membrane (18) in silicon chip lower surface, uses
In the eutectic bonding with lower shoe (3).(see accompanying drawing 4 [8])
【2】The step of preparation process of upper cover plate (2)
1) using (100) face twin polishing silicon wafer to manufacture upper cover plate (2), standard cleaning is carried out to which.
2) 1100 DEG C of thermal oxides, make the silica membrane (19) of 0.3 micron of thickness in silicon chip surface.(see accompanying drawing 4
[9])
3) silicon chip upper surface protection, in the mask pattern in lower surface photoetching tunnel needle point (10), slow release hydrofluoric acid solution is rotten
Erosion silica membrane, retains tunnel needle point (10) superficial silicon dioxide silicon thin film.(see accompanying drawing 4 [10])
4) 40% potassium hydroxide solution anisotropic wet erodes to tunnel needle point (10) diameter equal to 0.5 micron, is formed
Tunnel needle point (10).(see accompanying drawing 4 [11])
5) 950 DEG C of thermal oxides, make 0.5 micron of thick silicon dioxide thin film (20) on tunnel needle point (10).(see accompanying drawing 4
[12])
6) in the mask pattern of silicon chip upper surface photoetching through hole (21), slow release hydrofluoric acid solution corrosion through hole (21) region
Silica membrane.(see accompanying drawing 4 [13])
7) silicon in DRIE depths reaction and plasma lithographic technique etching through hole (21).(see accompanying drawing 4 [14])
8) the plating Cu in through hole (21), forms metal interconnecting wires (22).(see accompanying drawing 4 [15])
9) silicon chip lower surface sputtering 20nmTi/200nmAu thin film, photoetching combine to form tunnel needle point electricity with etching process
Pole (11) and coordination electrode Top electrode (12).(see accompanying drawing 4 [16])
10) silicon chip upper surface sputtering 20nmTi/200nmAu thin film, photoetching combine with etching process make upper cover plate draw
Line (23), draws the signal of telecommunication of tunnel needlepoint electrode (11) and coordination electrode Top electrode (12).(see accompanying drawing 4 [17])
11) plasma enhanced chemical vapour deposition deposits 0.5 micron of amorphous silicon membrane 2 (24) in silicon chip lower surface,
As master chip and the eutectic bonding layer (14) of upper cover plate, lower surface photoetching, the non-crystalline silicon on KOH corrusion tunnel needle point (10) surfaces
Thin film 2 (24), retains bond area noncrystal membrane 2 (24).(see accompanying drawing 4 [18])
【3】The step of preparation process of lower shoe (3)
1) using (100) face twin polishing silicon wafer to manufacture lower shoe (3), standard cleaning is carried out to which.
2) lower surface protection, upper surface photoetching, 40% potassium hydroxide solution wet etching remove silicon chip upper surface and just confront
The silicon in gauge block (4) region, vertical etches depth are equal to 50 microns, and formation pit (13) is mass (4) by Z axis acceleration
Activity space is provided in the small movements of chip normal direction.(see accompanying drawing 4 [19])
3) lower shoe (3) upper surface sputtering 20nmTi/200nmAu thin film (25), for the eutectic with master chip lower surface
Bonding.(see accompanying drawing 4 [20])
【4】Three layers of bonding steps
By the upper surface of upper cover plate (2) lower surface and lower shoe (3) respectively in the face of the upper surface and following table of master chip (1)
Face, is put into eutectic bonding machine after alignment, control key combined pressure is 0.5MPa by force, and after being warming up to 450 degrees Celsius, constant temperature 30 minutes reaches
To after constant temperature time, room temperature is naturally cooled to, complete bonding.(see accompanying drawing 4 [21])
Claims (10)
1. a kind of low cross sensitivity tunnel current formula accelerometer, it is characterised in that：Described accelerometer is by master chip
(1), upper cover plate (2) and lower shoe (3) composition；Wherein master chip (1) is by mass (4), support beam (5), lead bridge (6), tunnel
Road electrode (7), coordination electrode bottom electrode (8), framework (9) composition；One end of support beam (5) is clamped in mass (4) side, separately
One end is clamped on the inside of framework (9), and the axis of support beam (5) is with the center of gravity of mass (4) in same plane；Tunnel needle point
And its tunnel needlepoint electrode (11) on surface, coordination electrode Top electrode (12) are produced on upper cover plate (2) lower surface (10)；Lower shoe
(3) upper surface is just removed to the silicon in mass (4) region, is formed pit (13), is that mass (4) is existed by Z axis acceleration
The small movements of chip normal direction provide activity space.
2. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Support beam
(5), in same plane, when by X, Y-axis acceleration, mass is only in X-axis, Y-axis for the center of gravity of axis and mass (4)
Direction produces displacement without rotating, and is prevented effectively from X-axis, the intersection that Y-axis input acceleration is caused to Z axis acceleration analysis
Axle is disturbed.
3. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Adopt with
Lower processing step makes：
【1】The step of preparation process of master chip (1)：
1) using (100) face, twin polishing silicon chip, thickness is H, carries out standard cleaning to which；
2) corrosion masking layer 1 (14) is made in silicon chip surface；
3) metallic film 1 (15) is deposited in silicon chip upper surface, make tunnel electrode (7), coordination electrode bottom electrode (8), and retain
The metallic film 1 (15) of chip corner, for follow-up bonding technology；
4), shown in lower surface photoetching, such as Fig. 3 [1], wherein Lycoperdon polymorphum Vitt graph area is protected to corrode the region that is corroded of masking layer 1 (14)
Stay mass (4), framework (9), mass convex corner compensation region (16), the corrosion masking layer 1 of support beam etching mask (17)
(14)；
5) corrode silicon from lower surface in anisotropic etchant, corrosion depth is (H+h1)/2-h2, wherein, h1It is support beam (5)
Design thickness, h2For the design thickness of lead bridge (6)；
6) upper surface photoetching, removes the corrosion masking layer 1 (14) of Lycoperdon polymorphum Vitt graphics field shown in Fig. 3 [2], retains mass (4), draws
Line bridge (6), framework (9) and the corrosion masking layer 1 (14) in mass convex corner compensation region (16)；
7) lower surface photoetching, removes support beam etching mask (17), retains mass (4), framework (9) and mass convex corner compensation
The corrosion masking layer 1 (14) in region (16)；
8) corrosion of silicon in anisotropic etchant, vertical etches depth are equal to (H-h1During)/2, it is thick that support beam (5) reaches design
Degree；
9) plasma enhanced chemical vapour deposition is in silicon chip lower surface deposited amorphous silicon thin film 1 (18), for lower shoe
(3) eutectic bonding；
【2】The step of preparation process of upper cover plate (2)：
1) using (100) face, twin polishing silicon chip, standard cleaning is carried out to which；
2) corrosion masking layer 2 (19) is made in silicon chip surface；
3) in the mask pattern of silicon chip lower surface photoetching tunnel needle point (10), make tunnel needle point (10)；
4) make on tunnel needle point (10) and corrode masking layer 3 (20)；
5) in the mask pattern of silicon chip upper surface photoetching through hole (21), remove the corrosion masking layer 2 (19) in through hole (21) region；
6) remove the silicon in through hole (21)；
7) plating metal interconnecting wires (22) in through hole (21)；
8) metallic film is deposited in silicon chip lower surface, make tunnel needlepoint electrode (11) and coordination electrode Top electrode (12)；
9) silicon chip upper surface deposit metallic film, photoetching are combined with etching process and make upper cover plate lead (23), draw tunnel
The signal of telecommunication of needlepoint electrode (11) and coordination electrode Top electrode (12)；
10) plasma enhanced chemical vapour deposition removes tunnel needle point in silicon chip lower surface deposited amorphous silicon thin film 2 (24)
(11) amorphous silicon membrane 2 (24) on surface, retains the amorphous silicon membrane 2 (24) of bond area, for follow-up bonding technology；
【3】The step of preparation process of lower shoe (3)
1) using (100) face, twin polishing silicon chip, standard cleaning is carried out to which；
2) upper surface photoetching, removes the silicon just to mass (4) region, forms pit (13), is that mass (4) is added by Z axis
Speed provides activity space in the small movements of chip normal direction；
3) metallic film 2 (25) is deposited, for the eutectic bonding with master chip lower surface；
【4】Three layers of bonding steps
It is by the upper surface of upper cover plate (2) lower surface and lower shoe (3) respectively in the face of the upper and lower surface of master chip (1), right
Eutectic bonding machine is put into after standard, three is bonded together using eutectic bonding technology.
4. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Described
Corrosion masking layer 1 (14), corrosion masking layer 2 (19) are with corrosion masking layer 3 (20) in silica membrane and silicon nitride film
At least one.
5. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Described
Metallic film 1 (15), metallic film 2 (25) are the one kind in Ti/Pt/Au and Ti/Au leads.
6. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Design
A length of L of support beam1, a width of b1, thickness is h1, a length of L of lead bridge2, a width of b2, the thickness of lead bridge (6) is h2, under support beam
The a length of L of surface corrosion mask (17)1+(H-h1) ctg54.7 °, support beam lower surface etching mask (17) is a width ofWherein, r3For the ratio of fast erosional surface and (100) face corrosion rate, θ be fast erosional surface with
(100) angle in face, a length of L of lead bridge (6) lower surface etching mask (26)2+2(H-h2) ctg54.7 °, width is more than b2+2
(H-h2) ctg54.7 °, less than the length of side of mass, as shown in Figure 3.
7. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Described
Removal corrosion masking layer 1 (14) is at least one of wet etching and dry etching with the method for corrosion masking layer 2 (19).
8. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Master chip
(1) it is first to carry out the 4th in another step of preparation process) step lower surface photoetching process and the 5th) step etching process, then does
2) → 4) → 5) → 3) → 6) → 7) → 8) 3) step process, that is, according to 1) → → sequence flow 9).
9. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：Described
The method for making tunnel needle point (19) is wet etching and the one kind in dry etching.
10. a kind of low cross sensitivity tunnel current formula accelerometer according to claim 1, it is characterised in that：It is described
Removal through hole (21) in the method for silicon be at least one of wet etching and dry etching.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008150A (en) * | 2017-11-10 | 2018-05-08 | 中国计量大学 | A kind of low intersecting axle sensitivity piezoresistive accelerometer structure and production method |
| CN108163803A (en) * | 2017-12-26 | 2018-06-15 | 中国计量大学 | A kind of MEMS three-dimensional tunnel structures |
| CN109987570A (en) * | 2019-03-29 | 2019-07-09 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam |
| CN110921611A (en) * | 2019-12-02 | 2020-03-27 | 西安交通大学 | MEMS spring mass structure with low lateral sensitivity |
| CN111693202A (en) * | 2020-07-01 | 2020-09-22 | 中国计量大学 | Novel pressure sensor based on quantum tunneling effect |
| CN117607489A (en) * | 2024-01-17 | 2024-02-27 | 中国工程物理研究院电子工程研究所 | Sensitive structure of piezoresistive acceleration sensor and acceleration sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5503018A (en) * | 1992-12-08 | 1996-04-02 | Alliedsignal Inc. | Tunnel current sensor with force relief protection |
| CN101109635A (en) * | 2007-08-20 | 2008-01-23 | 中北大学 | Micro-mechanical gyroscope based on tunneling effect |
| CN102608355A (en) * | 2011-11-23 | 2012-07-25 | 中国计量学院 | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof |
| CN203606385U (en) * | 2013-11-06 | 2014-05-21 | 中北大学 | Combined type accelerometer based on capacitance effect and tunnel effect |
-
2016
- 2016-11-03 CN CN201610971269.3A patent/CN106526229A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5503018A (en) * | 1992-12-08 | 1996-04-02 | Alliedsignal Inc. | Tunnel current sensor with force relief protection |
| CN101109635A (en) * | 2007-08-20 | 2008-01-23 | 中北大学 | Micro-mechanical gyroscope based on tunneling effect |
| CN102608355A (en) * | 2011-11-23 | 2012-07-25 | 中国计量学院 | Resonance-equilibrium tunnel current type three-axis acceleration transducer and manufacturing method thereof |
| CN203606385U (en) * | 2013-11-06 | 2014-05-21 | 中北大学 | Combined type accelerometer based on capacitance effect and tunnel effect |
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|---|---|---|---|---|
| CN108008150A (en) * | 2017-11-10 | 2018-05-08 | 中国计量大学 | A kind of low intersecting axle sensitivity piezoresistive accelerometer structure and production method |
| CN108163803A (en) * | 2017-12-26 | 2018-06-15 | 中国计量大学 | A kind of MEMS three-dimensional tunnel structures |
| CN108163803B (en) * | 2017-12-26 | 2023-05-26 | 中国计量大学 | MEMS three-dimensional tunnel structure |
| CN109987570A (en) * | 2019-03-29 | 2019-07-09 | 中国计量大学 | Thermoelectric converter structure and manufacturing method based on electromagnetic excitation monocrystalline silicon resonance beam |
| CN109987570B (en) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method |
| CN110921611A (en) * | 2019-12-02 | 2020-03-27 | 西安交通大学 | MEMS spring mass structure with low lateral sensitivity |
| CN110921611B (en) * | 2019-12-02 | 2022-08-05 | 西安交通大学 | MEMS spring mass structure with low lateral sensitivity |
| CN111693202A (en) * | 2020-07-01 | 2020-09-22 | 中国计量大学 | Novel pressure sensor based on quantum tunneling effect |
| CN117607489A (en) * | 2024-01-17 | 2024-02-27 | 中国工程物理研究院电子工程研究所 | Sensitive structure of piezoresistive acceleration sensor and acceleration sensor |
| CN117607489B (en) * | 2024-01-17 | 2024-04-09 | 中国工程物理研究院电子工程研究所 | Sensitive structure of piezoresistive acceleration sensor and acceleration sensor |
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