CN109987570B - Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method - Google Patents
Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method Download PDFInfo
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- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
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Abstract
The invention discloses a thermoelectric converter structure based on an electromagnetic excitation monocrystalline silicon resonant beam and a manufacturing method thereof. The thermoelectric converter is composed of a resonance beam chip (1) and an upper cover plate (2) which are bonded together. The heating resistor (4) is manufactured on the heat insulation film (5) of the upper cover plate (2). The main material of the resonance beam (3) is monocrystalline silicon, an electromagnetic excitation and electromagnetic detection mode is adopted, and an excitation wire (6) and a vibration pickup wire (7) are manufactured on the monocrystalline silicon and are manufactured on a borosilicate glass sheet (9) with good heat insulation performance. A permanent magnet is used to provide a magnetic field parallel to the chip surface and perpendicular to the resonance beam (3). When the resonance frequency variation of the resonance beam (3) when the heating resistor (4) is connected with the direct current voltage (or current) is equal to the resonance frequency variation of the resonance beam (3) when the alternating current voltage (or current) is connected, the direct current voltage (or current) is the effective value of the alternating current voltage (or current). The thermoelectric converter according to the present invention has the following advantages: the resonant beam (3) has high quality factor and small residual stress.
Description
Technical Field
The invention relates to a thermoelectric converter structure and a manufacturing method thereof, in particular to a thermoelectric converter structure based on an electromagnetic excitation monocrystalline silicon resonant beam and a manufacturing method thereof, belonging to the field of Micro-Electro-Mechanical Systems (MEMS).
Background
The alternating voltage (or current) reference is a reference measuring instrument in national alternating voltage (or current) magnitude transmission, is used for the comparison work of the alternating voltage (or current) reference in China and the alternating voltage (or current) reference in China, and is also the basis of alternating power and electric energy measurement.
The internationally most accurate ac voltage (or current) reference is currently achieved by thermoelectric converters. The thermoelectric converter is mainly composed of a heating resistor and a temperature detecting element which are made on a heat insulating film. The AC voltage (or current) and the DC voltage (or current) are sequentially and alternately applied to the heating resistor to generate Joule heat to raise the temperature of the heating resistor, and the temperature detecting element measures the temperature of the heating resistor and compares their output signals to obtain the effective value of the AC voltage (or current).
In a thermoelectric converter, the temperature of a heating resistor is often measured using a thermopile. Based onThe thermoelectric converter of the thermopile thermometry technology has the following disadvantages: (1) The output impedance of the thermopile temperature sensitive element is large, and the measuring instrument must have large input impedance to realize impedance matching. (2) The capacitive coupling between the heating resistor and the hot end of the thermopile increases the ac-dc thermoelectric conversion error. (3) In view of improving the sensitivity of the thermopile to temperature and reducing the amount of heat conducted to the substrate via the thermopile, the thermopile material needs to have the characteristics of high seebeck coefficient, low resistivity, low thermal conductivity, and the like. However, according to the Wedman-Franze law, the product of the thermal conductivity and the electrical resistivity of the material is constant, and it is difficult to reduce the thermal conductivity and the electrical resistivity at the same time. (4) Thermopile material with high response rate (such as Bi, sb, bi) 2 Te 3 、Bi 0.5 Sb 1.5 Te 3 、Sb 2 Te 3 ) The deposition, etching, stripping and other processes of (a) are poorly compatible with standard microfabrication processes. (5) In order to improve the sensitivity of temperature measurement and the response rate of a thermoelectric converter, a thermopile consisting of more than 100 pairs of thermocouples is often used for measuring the temperature of a heating resistor, a large-area heat insulation film needs to be manufactured, the film is easy to wrinkle or break, stress balance is not easy to realize, and the design freedom of a heater is limited.
Compared with a thermoelectric stack type thermoelectric converter, the resonant thermoelectric converter adopts a non-contact temperature sensing mode, the temperature sensing element of the resonant thermoelectric converter is a resonator, and the resonant frequency of the resonator is utilized to measure the temperature of the heating resistor on the basis of the highly sensitive characteristic of axial thermal stress. The temperature measurement mode reduces the heat conduction of the heating resistance heat to the substrate through the temperature sensor, and avoids the AC-DC conversion error caused by thermoelectric effect, parasitic capacitance and dielectric loss. The resonator works in a mechanical resonance state, the output frequency signal is not influenced by circuit drift and noise, the measurement precision, the signal-to-noise ratio and the resolution are high, the anti-interference capability is strong, an expensive nano-voltmeter is not needed, and the output signal can be acquired only by a common FPGA.
Marian Kampik et al, the university of polis in west, the landlands, propose a quartz crystal thermoelectric converter using a quartz crystal oscillator having a frequency output characteristic as a temperature sensing element, and although the quartz crystal has a high quality factor, there are two disadvantages: and (1) the temperature measurement sensitivity is low. (2) Quartz materials are difficult to process and become brittle when the thickness of the thin film is less than a few tens of microns. The brazilian national institute of metrology G M gerronymo proposed a frequency output thermoelectric converter consisting of a surface-mounted resistor as a heating element and a thermistor as a temperature sensing element. The resonant thermoelectric converter composed of such discrete components has a low quality factor of the oscillating circuit. Before the subject group, a plurality of resonant thermoelectric converters (patent numbers: 200810060614.3, 201610541376.2) are proposed, wherein a resonant beam is composed of silicon dioxide, silicon nitride and other films and has good heat insulation performance, but the resonant beam has large residual stress and large resonant frequency drift, and the stress relaxation phenomenon can be generated after long-time vibration to destroy the stability of a closed-loop self-excitation system.
Disclosure of Invention
The invention aims to provide a thermoelectric converter based on a monocrystalline silicon resonant beam, wherein the main material of the resonant beam is monocrystalline silicon, the thermoelectric converter has a high quality factor and small residual stress, and thermoelectric conversion errors and alternating current-direct current conversion errors can be remarkably reduced.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: the thermoelectric converter is composed of a resonant beam chip and an upper cover plate which are bonded together. The heating resistor is made on the heat insulation film of the upper cover plate. The main material of the resonance beam is monocrystalline silicon, and the resonance beam is made of borosilicate glass with good heat insulation performance. The resonant beam adopts an electromagnetic excitation and electromagnetic detection mode, an excitation wire and a vibration pickup wire are manufactured on the resonant beam, and a permanent magnet is adopted to provide a magnetic field which is parallel to the surface of the chip and is vertical to the resonant beam.
The working principle of the thermoelectric converter based on the electromagnetic excitation monocrystalline silicon resonant beam is as follows: when alternating current signals pass through the exciting wires on the resonance beams, the resonance beams vibrate in the normal direction of the chip to drive the vibration pickup wires to cut magnetic lines of force, and induced electromotive force is generated at two ends of the vibration pickup wires. When the frequency of the alternating current signal is the same as the natural frequency of the resonance beam, the resonance beam reaches a resonance state, the amplitude of induced electromotive force at two ends of the vibration pickup conducting wire is also maximum, and the resonance frequency of the resonance beam can be detected by measuring the resonance frequency of the induced electromotive force. Alternating current voltage (or current) and direct current voltage (or current) are sequentially and alternately applied to the heating resistor, the temperature of the heating resistor is increased by the generated joule heat, and the temperature of the resonant beam is increased by the radiated heat, so that the axial stress of the resonant beam is changed, and finally the resonant frequency of the resonant beam is changed. When the resonance frequency variation generated by the introduced direct current voltage (or current) is equal to the resonance frequency variation generated when the alternating current voltage (or current) is introduced, the direct current voltage (or current) is the effective value of the alternating current voltage (or current).
The thermoelectric converter based on the electromagnetic excitation monocrystalline silicon resonant beam can be manufactured and packaged by the following method:
【1】 The manufacturing process flow of the resonant beam chip comprises the following steps:
1) The substrate is a bonding piece of a monocrystalline silicon piece and a borosilicate glass piece, and the monocrystalline silicon is thinned to the designed thickness.
2) And photoetching the resonance beam and etching the silicon in the molding groove.
3) And manufacturing an insulating film on the surface of the bonding sheet.
4) And manufacturing an excitation wire, a vibration pickup wire and a bonding pad.
5) Bonding material a is deposited and patterned on the substrate.
6) And corroding the borosilicate glass below the resonance beam and releasing the resonance beam.
【2】 The manufacturing process flow of the upper cover plate comprises the following steps:
1) And the substrate is a (100) plane and double-sided polished silicon wafer, and the corrosion masking layer is manufactured.
2) And photoetching and corroding the silicon on the lower surface (the surface facing the resonant beam) to a certain depth.
3) And photoetching and etching the through hole.
4) And manufacturing a heat insulation film on the surface of the silicon wafer.
5) And sputtering an adhesion layer, a barrier layer and a seed layer in the through hole, electroplating to realize in-hole metallization, and manufacturing through hole interconnection.
6) Sputtering alloy film on the lower surface, photoetching and etching to make heating resistor.
7) And manufacturing a getter on the lower surface, and patterning.
8) And manufacturing a lead on the surface of the upper cover plate.
9) And depositing and patterning bonding material B on the lower surface.
【3】 Bonding process of the resonant beam chip and the upper cover plate:
and after aligning the resonant beam chip and the upper cover plate, placing the resonant beam chip and the upper cover plate into a bonding machine, and bonding the resonant beam chip and the upper cover plate together.
The thermoelectric converter based on the electromagnetic excitation monocrystalline silicon resonant beam has the following advantages that: the resonant beam has high quality factor and small residual stress.
Drawings
Fig. 1 is a schematic diagram of a thermoelectric converter based on an electromagnetically excited monocrystalline silicon resonant beam according to the present invention.
Fig. 2 is a basic process flow diagram of a thermoelectric converter resonant beam chip based on an electromagnetically excited monocrystalline silicon resonant beam as an embodiment of the present invention, along view AA' in fig. 1.
Fig. 3 is a basic process flow diagram of an upper cover plate of a thermoelectric converter based on electromagnetically excited monocrystalline silicon resonant beams as an embodiment of the present invention, along view BB' in fig. 1.
Fig. 4 is a schematic cross-sectional view of a chip of a resonance beam of a thermoelectric converter based on an electromagnetically excited single-crystal silicon resonance beam and an upper cover plate after bonding, as an embodiment of the present invention.
In the drawings:
1-resonant beam chip 2-upper cover plate 3-resonant beam
4-heating resistance 5-heat insulation film 6-exciting wire
7-vibration pickup wire 8-silicon wafer 9-borosilicate glass sheet
10-forming groove 11-insulating film 12-bonding pad
13-bonding material A14-etch mask 15-Via
16-via interconnect 17-getter 18-lead
19-bonding material B20-anchor point
Detailed Description
The invention is further illustrated by, but not limited to, the following figures and examples.
The embodiment is as follows: the thermoelectric converter based on the electromagnetic excitation monocrystalline silicon resonant beam is manufactured by utilizing the manufacturing process steps provided by the invention, and the manufacturing process steps are as follows:
【1】 The manufacturing process flow of the resonant beam chip (1) comprises the following steps:
1) The substrate is a bonding piece of an ultra-flat monocrystalline silicon piece (8) and a borosilicate glass piece (9), and the tetramethyl ammonium hydroxide solution corrodes monocrystalline silicon to thin the silicon piece to 3 microns. (see figure 2[2 ])
2) And photoetching a pattern of the resonant beam (3), and etching silicon in the molding groove (10) to borosilicate glass by using inductively coupled plasma. (see FIG. 2)
3) A silicon-rich silicon nitride film of 0.5 μm is deposited as an insulating film (11) on the upper surface by plasma enhanced chemical vapor deposition. (see FIG. 2[2], [3 ])
4) A Cr/Au thin film is sputtered on the insulating film 11 to form an excitation wire 6, a vibration pickup wire 7 and a bonding pad 12. (see FIG. 2[2], [4 ])
5) And depositing an amorphous silicon film as a bonding material A (13) by a plasma enhanced chemical vapor deposition method, photoetching a seal ring pattern, and etching amorphous silicon outside the seal ring. (see FIG. 2[2], [5 ])
6) BHF solution with glycerol added (40% ammonium fluoride: glycerol: 40% HF = 4: 2: 1) corroded the borosilicate glass under the resonance beam (3) releasing the resonance beam (3). (see FIG. 2[2 ])
【2】 The manufacturing process flow of the upper cover plate (2) is as follows:
1) The substrate is a (100) plane and double-sided polished silicon wafer, standard cleaning is carried out, silicon dioxide is grown on the surface of the silicon wafer as a corrosion masking layer (14) by a thermal oxidation method, and the thickness is 600nm. (see figure 3[2 ])
2) And photoetching a corrosion window on one surface facing the resonance beam (3), and slowly releasing hydrofluoric acid solution to remove the corrosion masking layer (14) in the corrosion window. The potassium hydroxide solution etches the silicon in the window to a depth of 50 μm. (see FIG. 3 2)
3) And photoetching the pattern of the through hole (15), and manufacturing the vertical through silicon hole (15) with the aperture smaller than 5 mu m and the high depth-depth ratio by a deep plasma etching process. (see FIG. 3 2[2 ])
4) And removing the corrosion masking layer (14) and carrying out standard cleaning. And thermally oxidizing again to form a silicon dioxide film with the thickness of 0.9 mu m, depositing a silicon nitride film with the thickness of 0.3 mu m on the silicon wafer by a low-pressure chemical vapor deposition method, and forming a heat insulation film (5) by the silicon dioxide film and the silicon nitride film. (see figure 3[2 ])
5) And sputtering an adhesion layer Ti, a barrier layer TiN and a seed layer Cu in the through hole (15), electroplating Cu to realize in-hole metallization, and manufacturing through hole interconnection (16). (see FIG. 3[2 ])
6) Sputtering NiCrSi film with the thickness of 89nm. And photoetching a heating resistor (4) pattern, and corroding the NiCrSi film which is not protected by the photoresist in a cerium ammonium nitrate solution by a wet method to manufacture the heating resistor (4). (see figure 3[2 ])
7) And photoetching a getter (17) pattern by a stripping technology, sputtering a titanium film, removing photoresist by acetone, and stripping to obtain the getter. (see figure 3[2 ])
8) The stripping technique produces gold leads (18) on the surface of the upper cover plate (2). (see FIG. 3[2 ])
9) The upper cover plate (2) is sputtered with a gold thin film as a bonding material B (19) and patterned. (see FIG. 3[2 ])
【3】 Bonding process of the resonant beam chip (1) and the upper cover plate (2):
and (3) aligning the bonding material A (13) on the resonant beam chip (1) to the bonding material B (19) on the upper cover plate (2), placing the aligned materials into a eutectic bonding machine, and carrying out vacuum packaging on the resonant beam chip (1) and the upper cover plate (2) together by using a eutectic bonding technology. And scribing and welding an outer lead. (see the attached figure 4)
It will be understood that the above description is not intended to limit the present invention, and that the present invention is not limited to the above examples, but rather, that various changes, modifications, additions and substitutions may be made by those skilled in the art without departing from the spirit and scope of the present invention.
Claims (4)
1. Thermoelectric converter based on electromagnetic excitation monocrystalline silicon resonance roof beam, its characterized in that: the thermoelectric converter is composed of a resonance beam chip (1) and an upper cover plate (2) which are bonded together, a heating resistor (4) is manufactured on a heat insulation film (5) of the upper cover plate (2), the main material of the resonance beam (3) is monocrystalline silicon and is manufactured on a borosilicate glass sheet (9) with good heat insulation performance, an excitation conducting wire (6) and a vibration pickup conducting wire (7) are manufactured on the resonance beam (3), and a permanent magnet is adopted to provide a magnetic field which is parallel to the surface of the chip and is vertical to the resonance beam (3) for the resonance beam (3).
2. An electromagnetically excited single crystal silicon resonator beam-based thermoelectric converter as claimed in claim 1, wherein: the resonant beam (3) works in an electromagnetic excitation and electromagnetic detection mode, when an alternating current signal is introduced into an excitation wire (6) on the resonant beam (3), the resonant beam (3) vibrates in the normal direction of a chip to drive a vibration pickup wire (7) to cut magnetic lines, induced electromotive force is generated at two ends of the vibration pickup wire (7), when the frequency of the alternating current signal is the same as the natural frequency of the resonant beam (3), the resonant beam (3) reaches a resonant state, the amplitude of the induced electromotive force at two ends of the vibration pickup wire (7) is also maximized, and the resonant frequency of the resonant beam (3) can be detected by measuring the resonant frequency of the induced electromotive force.
3. An electromagnetically excited single crystal silicon resonator beam-based thermoelectric converter as claimed in claim 1, wherein: alternating current voltage or current and direct current voltage or current are sequentially and alternately applied to the heating resistor (4) to generate joule heat so that the temperature of the heating resistor (4) is increased, and the radiated heat causes the temperature of the resonant beam (3) to be increased, so that the axial stress of the resonant beam (3) is changed, and the resonant frequency of the resonant beam (3) is changed; when the resonance frequency variation of the resonance beam (3) is equal to the resonance frequency variation when the alternating current voltage or current is introduced, the direct current voltage or current is the effective value of the alternating current voltage or current.
4. A method for manufacturing a thermoelectric converter based on an electromagnetically excited monocrystalline silicon resonant beam according to claim 1, characterized by manufacturing and packaging by the following process steps:
【1】 The manufacturing process flow of the resonant beam chip (1) comprises the following steps:
1) The substrate is a bonding piece of a monocrystalline silicon piece (8) and a borosilicate glass piece (9), and the monocrystalline silicon piece (8) is thinned to the designed thickness;
2) Photoetching the resonance beam (3) and etching the monocrystalline silicon in the molding groove (10);
3) An insulating film (11) is manufactured on the surface of the bonding sheet;
4) Manufacturing an excitation wire (6), a vibration pickup wire (7) and a bonding pad (12);
5) Depositing and patterning a bonding material A (13) on a substrate;
6) Corroding borosilicate glass below the resonance beam (3) and releasing the resonance beam (3);
【2】 The manufacturing process flow of the upper cover plate (2) is as follows:
1) The substrate is a (100) surface and double-sided polished silicon wafer, and the corrosion masking layer (14) is manufactured;
2) Photoetching and corroding the silicon on the lower surface, namely the surface facing the resonant beam (3), to a certain depth;
3) Photoetching and etching the through hole (15);
4) Manufacturing a heat insulation film (5) on the surface of the silicon wafer;
5) Sputtering an adhesion layer, a barrier layer and a seed layer in the through hole (15), electroplating to realize in-hole metallization, and manufacturing through hole interconnection (16);
6) Sputtering an alloy film on the lower surface, photoetching and corroding to manufacture a heating resistor (4);
7) Manufacturing a getter (17) on the lower surface, and patterning;
8) Manufacturing a lead (18) on the surface of the upper cover plate (2);
9) Depositing and patterning a bonding material B (19) on the lower surface;
【3】 Bonding process of the resonant beam chip (1) and the upper cover plate (2):
after being aligned, the resonant beam chip (1) and the upper cover plate (2) are placed into a bonding machine, and the resonant beam chip and the upper cover plate are bonded together.
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