CN103852171B - A kind of non-brake method Long Wave Infrared Probe absorbent layer structure - Google Patents
A kind of non-brake method Long Wave Infrared Probe absorbent layer structure Download PDFInfo
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- CN103852171B CN103852171B CN201410020977.XA CN201410020977A CN103852171B CN 103852171 B CN103852171 B CN 103852171B CN 201410020977 A CN201410020977 A CN 201410020977A CN 103852171 B CN103852171 B CN 103852171B
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000002745 absorbent Effects 0.000 title claims abstract description 12
- 239000002250 absorbent Substances 0.000 title claims abstract description 12
- 239000000523 sample Substances 0.000 title claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 40
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000002835 absorbance Methods 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 239000003292 glue Substances 0.000 description 16
- 238000000059 patterning Methods 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 239000011572 manganese Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- -1 argon ion Chemical class 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- YQOXCVSNNFQMLM-UHFFFAOYSA-N [Mn].[Ni]=O.[Co] Chemical compound [Mn].[Ni]=O.[Co] YQOXCVSNNFQMLM-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
Abstract
The invention discloses a kind of non-brake method Long Wave Infrared Probe absorbent layer structure, this absorbed layer is positioned on the thermo-responsive thin film of detector, is made up of first medium layer, the second metal level, the 3rd insulating barrier the most successively.It is characterized in that: first medium layer is the silicon nitride film that heat conductivity is good, corrosion resistance is strong, as anti-reflection layer and device protecting layer, thickness is 1000nm 1200nm；Second metal level be thickness be the nickel-chrome alloy layer of 8nm 12nm, as the absorbed layer of infrared band；3rd insulating barrier be thickness be the silica membrane of 50nm 100nm, as the insulating barrier between thermo-responsive thin film and metal level.This absorbed layer preparation technology is simple, easily compatible with existing microelectronic technique, it is adaptable to unit, alignment and area array infrared detector.The infrared absorption layer that this patent is provided has adhesion-tight, corrosion resistance is strong, reproducible, specific heat capacity is low, excellent heat transfer properties, the advantage that has more than 85% absorbance at 8 14 microns of infrared bands.
Description
Technical field
The present invention relates to optical thin film element, be specifically related to a kind of non-brake method Long Wave Infrared Probe absorbed layer
Structure.
Background technology
Non-brake method thermosensitive film type Infrared Detectors is a kind of important Infrared Detectors, compares body material temperature-sensitive
Device has the advantages such as thermal capacitance is little, fast response time, reliability and stability are high, reproducible, military,
The field such as civilian and industrial has a wide range of applications, such as, can be used for production monitoring, infra-red heat becomes
Picture, fireproof alarming, non-contact temperature measuring, spectrum analysis, temperature sensor, guided missile tracking and interception, medical treatment
All many-sides such as diagnosis.Thermosensitive type Infrared Detectors is the heat effect utilizing infra-red radiation, by heat and other
The conversion of physical quantity (such as resistance value, spontaneous polarization strength, temperature electromotive force etc.) detects infra-red radiation
's.In all thermosensitive type Infrared Detectorss, it is most widely used with thermosensitive resistance type Infrared Detectors, it
Compare pyroelectricity and two kinds of temperature-sensitive Infrared Detectorss of thermocouple are easier to preparation, and with low cost, and performance is also
More stable.
Conventional critesistor shaped material mainly has metal and semiconductive thin film.When a temperature increases, metal foil
Film electron mobility declines, thus causes film resistor to increase, temperature-coefficient of electrical resistance (TCR) be on the occasion of,
But its value is the least.And the TCR of semi-conducting material typically wants high an order of magnitude, it is the most the most frequently used
Heat-sensitive material.When the temperature increases, the charge carrier concentration of semi-conducting material and mobility increase,
Resistivity raises along with material temperature and reduces, and demonstrates negative TCR.Thermistor thin film type infrared acquisition
Utensil has non-brake method, processing technology compatible with integrated circuit fabrication process, it is simple to the advantages such as large-scale production,
There is sizable development potentiality, be that the most with the fastest developing speed, performance preferably and most has application prospect
A kind of non-refrigerated infrared detector.
The absorbed layer of the Uncooled infrared detection absorption characteristic to infra-red radiation, not only directly affects device
Responsiveness and detectivity, also determine the spectral response characteristic of device.In order to improve non-refrigeration infrared detector
Performance, for infrared absorption layer, can with high efficiency absorb infra-red radiation be very important.This is specially
The maximum feature of the infrared absorption layer that profit is provided is to have more than 85% absorption at 8 14 microns of infrared bands
Rate, be both this absorbed layer have adhesion-tight, high temperature resistant, corrosion resistance is strong, reproducible, specific heat capacity is low,
The advantages such as excellent heat transfer properties, it is easy to compatible with existing microelectronic processing technology, it is adaptable to unit, alignment
And area array infrared detector.
Summary of the invention
The purpose of the present invention is to propose to a kind of non-brake method Long Wave Infrared Probe absorbent layer structure.This patent
Design efficiently solve the short and existing semiconductor technology of traditional infrared absorbent layer structure absorption bands incompatible,
The problem being difficult to use in alignment and planar array detector.
The invention discloses a kind of non-brake method Long Wave Infrared Probe absorbent layer structure and preparation technology thereof, its
Structure as it is shown in figure 1, it is made up of silicon nitride film 1, nickel-chrome alloy layer 2 and silica membrane 3,
It is characterized in that: INFRARED ABSORPTION Rotating fields is followed successively by silicon nitride film 1 by the incident order of radiation, nickel chromium triangle closes
Layer gold 2, silica membrane 3, wherein:
The thickness of described silicon nitride film 1 is 1000nm 1200nm；
The thickness of described nickel-chrome alloy layer 2 is 8nm 12nm, and its square resistance is 9.0 Ω/ 10.0 Ω/；
The thickness of described silica membrane 3 is 50nm 100nm.
The LONG WAVE INFRARED absorbent layer structure of present invention design can be realized by following processing step:
1) using chemical solution method to prepare thickness on amorphous nickel/phosphorus/aluminium oxide substrate is 3.5 μm manganese cobalt nickel oxygen film.
2) graphical at manganese cobalt nickel oxygen film photomask surface, form etch mask.
3) using argon ion/HBr wet-etching technology to make the photosensitive unit of manganese cobalt nickel oxygen detector, area is
0.01mm2-0.25mm2.Floating glue cleans.
4) at film surface photolithography patterning, use double ion beam sputtered technique deposit 50nm chromium and
The gold of 200nm is as the electrode of detector.Floating glue cleans.
5) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon dioxide film is used,
Thickness is 50nm 100nm.
6) using double ion beam sputtered technique to deposit nickel-chrome alloy layer, thickness is 8nm 12nm.Floating glue is clear
Wash.
7) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon nitride film is used, thick
Degree is 1000nm 1200nm.Floating glue cleans.
The advantage of this patent is: this INFRARED ABSORPTION Rotating fields has adhesion-tight, high temperature resistant, corrosion resistance
By force, reproducible, specific heat capacity is low, excellent heat transfer properties, 8 14 microns of infrared bands have 85% with
The advantages such as upper absorbance；This absorbed layer preparation technology is simple simultaneously, it is easy to existing microelectronic processing technology
Compatibility, beneficially process integration, it is adaptable to unit, alignment and area array infrared detector.
Accompanying drawing illustrates:
Fig. 1 is infrared absorption layer structure chart, in figure 1, silicon nitride film, and 2, nickel-chrome alloy layer, 3, two
Silicon oxide film, 4, infra-red heat sensitive thin film.
Detailed description of the invention:
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the guarantor of this patent
The scope of protecting is not limited to following instance.
Example one:
Based on Mn1.56Co0.96Ni0.48O4In thermosensitive film type Infrared Detectors, have employed this patent and carried
The LONG WAVE INFRARED absorbent layer structure of confession.Realize especially by following steps.
(1) Mn1.56Co0.96Ni0.48O4The preparation of thermosensitive film
1) chemical solution method is used to prepare Mn on amorphous nickel/phosphorus/aluminium oxide substrate1.56Co0.96Ni0.48O4Thin film is thick
Degree is about 3.5 μm.
(2) etching forms electrode structure
2) at Mn1.56Co0.96Ni0.48O4Film surface photolithography patterning, forms etch mask.
3) using argon ion/HBr wet-etching technology to make the photosensitive unit of detector, area is 0.09mm2。
Floating glue cleans.
4) at film surface photolithography patterning, use double ion beam sputtered technique deposit 50nm chromium and
The gold of 200nm is as the electrode of detector.Floating glue cleans.
(3) deposit INFRARED ABSORPTION Rotating fields
5) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon dioxide film is used,
Thickness is 50nm.
6) using double ion beam sputtered technique to deposit nickel-chrome alloy layer, thickness is 8nm.Floating glue cleans.
7) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon nitride film is used, thick
Degree is 1000nm.Floating glue cleans.
Example two:
Based on Mn1.56Co0.96Ni0.48O4In thermosensitive film type Infrared Detectors, have employed this patent and carried
The LONG WAVE INFRARED absorbent layer structure of confession.Realize especially by following steps.
(1) Mn1.56Co0.96Ni0.48O4The preparation of thermosensitive film
1) chemical solution method is used to prepare Mn on amorphous nickel/phosphorus/aluminium oxide substrate1.56Co0.96Ni0.48O4Thin film is thick
Degree is about 3.5 μm.
(2) etching forms electrode structure
2) at Mn1.56Co0.96Ni0.48O4Film surface photolithography patterning, forms etch mask.
3) using argon ion/HBr wet-etching technology to make the photosensitive unit of detector, area is 0.09mm2。
Floating glue cleans.
4) at film surface photolithography patterning, use double ion beam sputtered technique deposit 50nm chromium and
The gold of 200nm is as the electrode of detector.Floating glue cleans.
(3) deposit INFRARED ABSORPTION Rotating fields
5) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon dioxide film is used,
Thickness is 75nm.
6) using double ion beam sputtered technique to deposit nickel-chrome alloy layer, thickness is 10nm.Floating glue cleans.
7) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon nitride film is used, thick
Degree is 1100nm.Floating glue cleans.
Example three:
Based on Mn1.56Co0.96Ni0.48O4In thermosensitive film type Infrared Detectors, have employed this patent and carried
The LONG WAVE INFRARED absorbent layer structure of confession.Realize especially by following steps.
(1) Mn1.56Co0.96Ni0.48O4The preparation of thermosensitive film
1) chemical solution method is used to prepare Mn on amorphous nickel/phosphorus/aluminium oxide substrate1.56Co0.96Ni0.48O4Thin film is thick
Degree is about 3.5 μm.
(2) etching forms electrode structure
2) at Mn1.56Co0.96Ni0.48O4Film surface photolithography patterning, forms etch mask.
3) using argon ion/HBr wet-etching technology to make the photosensitive unit of detector, area is 0.09mm2。
Floating glue cleans.
4) at film surface photolithography patterning, use double ion beam sputtered technique deposit 50nm chromium and
The gold of 200nm is as the electrode of detector.Floating glue cleans.
(3) deposit INFRARED ABSORPTION Rotating fields
5) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon dioxide film is used,
Thickness is 100nm.
6) using double ion beam sputtered technique to deposit nickel-chrome alloy layer, thickness is 12nm.Floating glue cleans.
7) at film surface photolithography patterning, rf magnetron sputtering technique deposition silicon nitride film is used, thick
Degree is 1200nm.Floating glue cleans.
Claims (1)
1. a non-brake method Long Wave Infrared Probe absorbent layer structure, it is by silicon nitride film (1), nickel
Chromium alloy layer (2) and silica membrane (3) composition, it is characterised in that: described absorbent layer structure is pressed
The incident order of radiation is followed successively by silicon nitride film (1), nickel-chrome alloy layer (2) and silica membrane (3)；
Wherein:
The thickness of described silicon nitride film (1) is 1000nm-1200nm；
The thickness of described nickel-chrome alloy layer (2) is 8nm 12nm, and its square resistance is 9.0 Ω/ 10.0
Ω/□；
The thickness of described silica membrane (3) is 50nm 100nm.
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| CN201410020977.XA CN103852171B (en) | 2014-01-17 | 2014-01-17 | A kind of non-brake method Long Wave Infrared Probe absorbent layer structure |
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| CN201410020977.XA CN103852171B (en) | 2014-01-17 | 2014-01-17 | A kind of non-brake method Long Wave Infrared Probe absorbent layer structure |
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| CN103852171B true CN103852171B (en) | 2016-12-07 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106153202B (en) * | 2016-07-18 | 2023-04-07 | 中国科学院重庆绿色智能技术研究院 | Uncooled broadband infrared detector |
| FR3056292B1 (en) * | 2016-09-22 | 2020-11-20 | Commissariat Energie Atomique | BOLOMETER TYPE ELECTROMAGNETIC RADIATION DETECTION STRUCTURE AND METHOD FOR MANUFACTURING SUCH A STRUCTURE |
| CN110160659B (en) * | 2019-05-17 | 2023-09-12 | 中国科学院上海技术物理研究所 | Uncooled infrared narrow-band detector with etched sensitive elements and preparation method |
| CN110793648A (en) * | 2019-11-11 | 2020-02-14 | 中国科学院上海技术物理研究所 | Aerogel heat insulation structure broadband infrared detector and preparation method thereof |
| CN113188669B (en) * | 2021-04-29 | 2023-06-27 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite film structure and carbon dioxide pyroelectric infrared detector |
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| KR100658114B1 (en) * | 2004-09-17 | 2006-12-14 | 한국과학기술연구원 | Infrared absorber structure, fabrication method of this structure, and infrared detector with this absorber structure |
| KR101183972B1 (en) * | 2008-12-16 | 2012-09-19 | 한국전자통신연구원 | bolometer structure with complemental absorption layer, pixel for IR detector using this and method for fabricating the same |
| CN101774530B (en) * | 2010-02-03 | 2012-06-06 | 电子科技大学 | Microbolometer and preparation method thereof |
| CN102529211B (en) * | 2011-12-22 | 2014-09-24 | 电子科技大学 | Film system structure for enhancing Terahertz radiation absorption rate and preparation method thereof |
| CN102848637A (en) * | 2012-08-29 | 2013-01-02 | 中国科学院长春光学精密机械与物理研究所 | Composite multilayer film infrared absorption layer |
| CN102928087A (en) * | 2012-11-01 | 2013-02-13 | 中国科学院上海技术物理研究所 | Flat spectrum absorption layer for detectors and manufacture method thereof |
| CN203772418U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Absorbing layer structure for non-refrigerating long-wave infrared detector |
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