CN114886161A

CN114886161A - MEMS heating atomization core capable of measuring temperature based on Mo heating resistance wire and manufacturing method thereof

Info

Publication number: CN114886161A
Application number: CN202210650164.3A
Authority: CN
Inventors: 李文翔; 王敏锐
Original assignee: Meiman Xinsheng Hangzhou Microelectronics Co ltd
Current assignee: Meiman Xinsheng Hangzhou Microelectronics Co ltd
Priority date: 2022-06-07
Filing date: 2022-06-07
Publication date: 2022-08-12

Abstract

The invention discloses a temperature measurable MEMS heating atomization core based on a Mo heating resistance wire, which belongs to the technical field of heating atomization cores and comprises a silicon substrate, a Mo heating wire and a passivation protection layer, wherein a liquid storage cavity is arranged in the silicon substrate, a silicon film part is arranged on the silicon substrate, a plurality of atomization micro-channels which are arranged in an array mode are arranged on the silicon film part, the atomization micro-channels are communicated with the liquid storage cavity, a contact electrode is arranged at the end part of the Mo heating wire, the passivation protection layer is manufactured on the Mo heating wire, and a avoidance hole corresponding to the contact electrode in position is formed in the passivation protection layer. According to the invention, the liquid storage cavity is formed on the silicon substrate, the silicon diaphragm is formed on the liquid storage cavity, the Mo heating resistor and the Mo electrode are formed on the silicon film, the Mo material has a higher melting point (2620 ℃) and is higher than a common metal heating material, the silicon substrate has good thermal conductivity, the temperature is uniform, and local overheating is not easily caused.

Description

MEMS heating atomization core capable of measuring temperature based on Mo heating resistance wire and manufacturing method thereof

Technical Field

The invention belongs to the technical field of heating atomization cores, and particularly relates to a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire and a manufacturing method thereof.

Background

The conventional heating atomization ceramic core is commonly made of materials such as FeCrAl, NiCr, Ni, Fe, Ti and the like as a heating wire, and has the following defects:

firstly, FeCrAl, NiCr, Ni, Fe and Ti are not friendly to human body and have certain harmfulness;

secondly, the melting point of the used material is not high enough, and the service life of the heating wire is influenced by local overheating;

thirdly, the resistance temperature characteristic of the used material is not good enough, and the ceramic core body has poor heat dissipation, so that local overheating is easily caused, and the temperature measurement is inaccurate. The phenomena of dry burning, core pasting and the like can be caused due to overhigh local temperature, the release of harmful substances is caused, the atomization reduction degree is influenced, and the user experience is influenced;

fourthly, the resistivity of the used material is relatively overhigh, the corresponding thickness is thicker when the target resistance value is reached, and the silicon-based atomization core using the MEMS processing technology is not friendly.

Disclosure of Invention

The invention aims to: the temperature-measurable MEMS heating atomization core based on the Mo heating resistance wire is provided for solving the problems that the resistance temperature characteristic of materials used by the existing heating wire is not good enough, the ceramic core body is not good in heat dissipation, local overheating is easily caused, the temperature measurement is not accurate, the local temperature is too high, the phenomena of dry burning, core pasting and the like can be caused, the release of harmful substances is caused, the atomization reduction degree is influenced, and the user experience is influenced.

In order to achieve the purpose, the invention adopts the following technical scheme: the utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistance wire, includes silicon substrate, Mo heater strip and passivation protective layer, be provided with the stock solution chamber in the silicon substrate, be provided with silicon membrane portion on the silicon substrate, be provided with the atomizing microchannel that a plurality of was the array and arranges in the silicon membrane portion, the atomizing microchannel with the stock solution chamber communicates with each other, the tip of Mo heater strip is provided with contact electrode, the passivation protective layer preparation is in on the Mo heater strip, it corresponds to be provided with the position on the passivation protective layer contact electrode dodges the hole.

As a further description of the above technical solution:

the passivation protective layer is any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride.

As a further description of the above technical solution:

the contact electrode is made of Mo material.

As a further description of the above technical solution:

the depth of the atomization microchannel is 2um-300 um.

As a further description of the above technical solution:

the thickness of the passivation protective layer is 50nm-4 um.

As a further description of the above technical solution:

the reservoir depth can be 50um-400 um.

On the other hand, the invention also provides a manufacturing method of the MEMS heating atomization core capable of measuring the temperature based on the Mo heating resistance wire, which comprises the following steps:

s1, preparing the silicon substrate slice, depositing the Mo heating wire and the contact electrode on the silicon substrate slice, and making a specific pattern by a dry etching or wet etching process;

s2, depositing the passivation protective layer on the Mo heating wire and the contact electrode, wherein the material can be any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride, the thickness can be 5nm-150um, and the passivation protective layer on the electrode is etched through a dry etching process or a wet etching process;

s3, sequentially etching the passivation protective layer, the isolation layer and the silicon substrate by using a dry etching process or a wet etching process, and forming the atomization microchannel on the silicon substrate, wherein the depth of the atomization microchannel can be 50-2 um;

s4, etching the liquid storage cavity on the back surface, wherein the liquid storage cavity can be etched by a dry etching process or a wet etching process, and the depth of the liquid storage cavity can be 50um-400 um.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:

in the invention, the liquid storage cavity is arranged on the silicon substrate, the silicon diaphragm is formed on the liquid storage cavity, the Mo heating resistor (Mo heating wire) and the Mo electrode are arranged on the silicon film, and the Mo material has a higher melting point (2620 ℃) and is higher than that of a common metal heating material. The resistance and the temperature of the material have good linear correlation, and the material is sensitive to temperature change and quick in response; the silicon substrate with good thermal conductivity is combined, so that the temperature is uniform, and local overheating is not easily caused; in the heating process of the heating wire, the temperature value is calculated by measuring the resistance value of the heating wire, and the result is real-time and accurate; the power supply can adjust the output power or voltage in real time through the temperature value, so that the atomization effect and the energy efficiency are improved; the Mo heating wire and the Mo electrode can also be used as passivation protective layers, so that the service life of the heating wire is further prolonged. The silicon film is provided with atomizing micropores arranged in an array, the structure of the atomizing micropores can be completely realized by an MEMS processing technology, and a metal thick film printing technology, a sintering technology or an embedding technology which is not friendly to the MEMS technology is not needed.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of a MEMS heating atomizing core capable of measuring temperature based on a Mo heating resistance wire.

FIG. 2 is a schematic structural diagram of a silicon substrate in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.

FIG. 3 is a structural schematic diagram of a Mo heating wire in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.

FIG. 4 is a schematic view of a processing structure of a passivation protection layer in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.

FIG. 5 is a schematic view of a processing structure of an atomizing microchannel in a temperature-measurable MEMS heating atomizing core based on a Mo heating resistance wire.

Illustration of the drawings:

1-a silicon substrate; 2-Mo heating wires; 3-passivating the protective layer; 4-a liquid storage cavity; 5-a silicon film portion; 6-atomizing the microchannel; 7-a contact electrode; 8-avoiding hole.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the embodiments of the present invention, it should be noted that the terms "upper", "inner", and the like refer to orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when the products of the present invention are used, and are used only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1-5, the present invention provides a technical solution: the utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistance wire, includes silicon substrate 1, Mo heater strip 2 and passivation protective layer 3, be provided with stock solution chamber 4 in the silicon substrate 1, be provided with silicon membrane portion 5 on the silicon substrate 1, be provided with a plurality of on the silicon membrane portion 5 and be the atomizing microchannel 6 that the array was arranged, atomizing microchannel 6 with stock solution chamber 4 communicates with each other, the tip of Mo heater strip 2 is provided with contact electrode 7, passivation protective layer 3 makes on the Mo heater strip 2, it corresponds to be provided with the position on the passivation protective layer 3 contact electrode 7 dodges hole 8.

The passivation protective layer 3 is any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride.

The contact electrode 7 is made of Mo material.

The depth of the atomizing micro-channel 6 is 2um-300 um.

The thickness of the passivation protective layer 3 is 50nm-4 um.

The depth of the liquid storage cavity 4 can be 50um-400 um.

The invention also provides a manufacturing method of the MEMS heating atomizing core capable of measuring the temperature based on the Mo heating resistance wire, which comprises the following steps:

s1, preparing the silicon substrate 1, depositing the Mo heating wire 2 and the contact electrode 7 on the silicon substrate, and making a specific pattern by a dry etching or wet etching process;

s2, depositing the passivation protection layer 3 on the Mo heating wire 2 and the contact electrode 7, wherein the material can be any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride, the thickness can be 50nm-4um, and the passivation protection layer 3 on the electrode is etched through a dry etching process or a wet etching process;

s3, sequentially etching the passivation protective layer 3, the isolation layer and the silicon substrate 1 by using a dry etching process or a wet etching process, and forming the atomizing micro-channel 6 on the silicon substrate 1, wherein the depth can be 2-300 um;

s4, etching the liquid storage cavity 4 on the back, wherein the liquid storage cavity 4 can be etched by a dry etching process or a wet etching process, and the depth of the liquid storage cavity 4 can be 50um-400 um.

The working principle is as follows: a liquid storage cavity is formed on a silicon substrate, a silicon diaphragm is formed on the liquid storage cavity, a Mo heating resistor and a Mo electrode are formed on a silicon film, and the Mo material has a higher melting point (2620 ℃) and is higher than a common metal heating material. The resistance and the temperature of the material have good linear correlation, and the material is sensitive to temperature change and quick in response; the silicon substrate with good thermal conductivity is combined, so that the temperature is uniform, and local overheating is not easily caused. In the heating process of the heating wire, the temperature value is calculated by measuring the resistance value of the heating wire, and the result is real-time and accurate; the power supply can adjust the output power or voltage in real time through the temperature value, so that the atomization effect and the energy efficiency are improved. The Mo heating wire and the Mo electrode can also be used as passivation protective layers, so that the service life of the heating wire is further prolonged. The silicon film is provided with atomizing micropores arranged in an array, the structure of the atomizing micropores can be completely realized by an MEMS processing technology, and a metal thick film printing technology, a sintering technology or an embedding technology which is not friendly to the MEMS technology is not needed.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims

1. The utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk, its characterized in that, includes silicon substrate (1), Mo heater strip (2) and passivation protective layer (3), be provided with stock solution chamber (4) in silicon substrate (1), be provided with silicon membrane portion (5) on silicon substrate (1), be provided with a plurality of atomizing microchannel (6) that are the array and arrange on silicon membrane portion (5), atomizing microchannel (6) with stock solution chamber (4) communicate with each other, the tip of Mo heater strip (2) is provided with contact electrode (7), passivation protective layer (3) preparation is in on Mo heater strip (2), be provided with the position on passivation protective layer (3) and correspond contact electrode (7) dodge hole (8).

2. The MEMS heating atomization core capable of measuring temperature based on the Mo heating resistance wire is characterized in that the passivation protection layer (3) is any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride.

3. The MEMS heating atomization core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the contact electrode (7) is made of Mo material.

4. The MEMS heating atomizing core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the depth of the atomizing micro-channel (6) is 2-300 um.

5. The MEMS heating atomizing core capable of measuring temperature based on the Mo heating resistance wire is characterized in that the thickness of the passivation protection layer (3) is 50nm-4 um.

6. The MEMS heating atomizing core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the depth of the liquid storage cavity (4) can be 50-400 um.

7. The manufacturing method of the MEMS heating atomizing core capable of measuring the temperature based on the Mo heating resistance wire is characterized by comprising the following steps of:

s1, preparing the silicon substrate (1), depositing the Mo heating wire (2) and the contact electrode (7) on the silicon substrate, and making a specific pattern by a dry etching or wet etching process;

s2, depositing the passivation protection layer (3) on the Mo heating wire (2) and the contact electrode (7), wherein the material can be any one of silicon oxide, silicon nitride or a combination of silicon oxide and silicon nitride, the thickness can be 50nm-4um, and the passivation protection layer (3) on the electrode is etched through a dry etching process or a wet etching process;

s3, sequentially etching the passivation protective layer (3), the isolation layer and the silicon substrate (1) by using a dry etching process or a wet etching process, and forming the atomizing micro-channel (6) on the silicon substrate (1), wherein the depth can be 2-300 um;

s4, etching the liquid storage cavity (4) on the back surface, wherein the liquid storage cavity (4) can be etched by a dry etching process or a wet etching process, and the depth of the liquid storage cavity (4) can be 50um-400 um.