CN218126977U - But temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk - Google Patents
But temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk Download PDFInfo
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- CN218126977U CN218126977U CN202221422825.9U CN202221422825U CN218126977U CN 218126977 U CN218126977 U CN 218126977U CN 202221422825 U CN202221422825 U CN 202221422825U CN 218126977 U CN218126977 U CN 218126977U
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Abstract
The utility model discloses a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk belongs to the atomizing core technical field that generates heat, including silicon substrate, mo heater strip and passivation protective layer, be provided with the stock solution chamber in the silicon substrate, be provided with silicon membrane portion on the silicon substrate, be provided with a plurality of in the silicon membrane portion and be the atomizing microchannel that the array was arranged, atomizing microchannel with the stock solution chamber communicates with each other, the tip of Mo heater strip is provided with contact electrode, the passivation protective layer preparation is in on the Mo heater strip, it corresponds to be provided with the position on the passivation protective layer contact electrode dodges the hole. The utility model discloses a be equipped with the stock solution chamber on the silicon substrate, form the silicon diaphragm on it, be equipped with Mo heating resistor and Mo electrode on the silicon membrane, the Mo material has higher melting point (2620 ℃), is higher than metal heating material commonly used generally, has the silicon substrate of good heat conductivity, and the temperature is even, is difficult for causing local overheat.
Description
Technical Field
The utility model belongs to the technical field of the atomizing core that generates heat, especially, relate to a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk.
Background
The existing heating atomization ceramic core is commonly used as a heating wire made of materials such as FeCrAl, niCr, ni, fe, ti and the like, and has the following defects:
firstly, feCrAl, niCr, ni, fe and Ti are not friendly to human body and have certain harmfulness;
secondly, the melting point of the used material is not high enough, and the service life of the heating wire is influenced by local overheating;
thirdly, the resistance temperature characteristic of the used material is not good enough, and the ceramic core body has poor heat dissipation, so that local overheating is easily caused, and the temperature measurement is inaccurate. The phenomena of dry burning, core pasting and the like can be caused due to overhigh local temperature, the release of harmful substances is caused, the atomization reduction degree is influenced, and the user experience is influenced;
fourthly, the resistivity of the used material is relatively overhigh, the corresponding thickness is thicker when the target resistance value is reached, and the silicon-based atomization core using the MEMS processing technology is not friendly.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a: the temperature-measurable MEMS heating atomization core based on the Mo heating resistance wire is provided for solving the problems that the resistance temperature characteristic of materials used by the existing heating wire is not good enough, the ceramic core body is not good in heat dissipation, local overheating is easily caused, the temperature measurement is not accurate, the local temperature is too high, the phenomena of dry burning, core pasting and the like can be caused, the release of harmful substances is caused, the atomization reduction degree is influenced, and the user experience is influenced.
In order to achieve the above purpose, the utility model adopts the following technical scheme: the utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistance wire, includes silicon substrate, mo heater strip and passivation layer, be provided with the stock solution chamber in the silicon substrate, be provided with silicon membrane portion on the silicon substrate, be provided with the atomizing microchannel that a plurality of was array arrangement in the silicon membrane portion, the atomizing microchannel with the stock solution chamber communicates with each other, the tip of Mo heater strip is provided with contact electrode, the passivation layer preparation is in on the Mo heater strip, it corresponds to be provided with the position on the passivation layer contact electrode dodges the hole.
As a further description of the above technical solution:
the passivation protective layer is silicide.
As a further description of the above technical solution:
the contact electrode is made of Mo material.
As a further description of the above technical solution:
the depth of the atomizing microchannel is 2um-300um.
As a further description of the above technical solution:
the thickness of the passivation protective layer is 50nm-4um.
As a further description of the above technical solution:
the reservoir depth can be 50um-400um.
To sum up, owing to adopted above-mentioned technical scheme, the beneficial effects of the utility model are that:
the utility model discloses in, through being equipped with the stock solution chamber on the silicon substrate, form the silicon diaphragm on it, be equipped with Mo heating resistor (Mo heater strip) and Mo electrode on the silicon membrane, the Mo material has higher melting point (2620 ℃), is higher than general metal heating material commonly used. The resistance and the temperature of the material have good linear correlation, and the material is sensitive to temperature change and quick in response; the silicon substrate with good thermal conductivity is combined, so that the temperature is uniform, and local overheating is not easily caused; in the heating process of the heating wire, the temperature value is calculated by measuring the resistance value of the heating wire, and the result is real-time and accurate; the power supply can adjust the output power or voltage in real time through the temperature value, so that the atomization effect and the energy efficiency are improved; the Mo heating wire and the Mo electrode can also be used as passivation protective layers, so that the service life of the heating wire is further prolonged. The silicon film is provided with atomizing micropores arranged in an array, the structure of the atomizing micropores can be completely realized by an MEMS processing technology, and a metal thick film printing technology, a sintering technology or an embedding technology which is not friendly to the MEMS technology is not needed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a structural schematic diagram of a MEMS heating atomization core capable of measuring temperature based on a Mo heating resistance wire.
FIG. 2 is a schematic structural diagram of a silicon substrate in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.
FIG. 3 is a structural schematic diagram of a Mo heating wire in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.
FIG. 4 is a schematic view of a processing structure of a passivation protection layer in a temperature-measurable MEMS heating atomization core based on a Mo heating resistance wire.
FIG. 5 is a schematic view of a processing structure of an atomizing microchannel in a temperature-measurable MEMS heating atomizing core based on a Mo heating resistance wire.
Illustration of the drawings:
1-a silicon substrate; 2-Mo heating wires; 3-passivating the protective layer; 4-a liquid storage cavity; 5-a silicon film portion; 6-an atomizing microchannel; 7-a contact electrode; 8-avoiding hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the terms "upper", "inner" and the like indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the utility model is used, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to which the term refers must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-5, the present invention provides a technical solution: the utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistance wire, includes silicon substrate 1, mo heater strip 2 and passivation protective layer 3, be provided with stock solution chamber 4 in the silicon substrate 1, be provided with silicon membrane portion 5 on the silicon substrate 1, be provided with a plurality of on the silicon membrane portion 5 and be the atomizing microchannel 6 that the array was arranged, atomizing microchannel 6 with stock solution chamber 4 communicates with each other, the tip of Mo heater strip 2 is provided with contact electrode 7, passivation protective layer 3 makes on the Mo heater strip 2, it corresponds to be provided with the position on the passivation protective layer 3 contact electrode 7 dodges hole 8.
The passivation protective layer 3 is silicide.
The contact electrode 7 is made of Mo material.
The depth of the atomizing micro-channel 6 is 2um-300um.
The thickness of the passivation protective layer 3 is 50nm-4um.
The depth of the liquid storage cavity 4 can be 50um-400um.
The working principle is as follows: a liquid storage cavity is formed on a silicon substrate, a silicon diaphragm is formed on the liquid storage cavity, a Mo heating resistor and a Mo electrode are formed on a silicon film, and the Mo material has a higher melting point (2620 ℃) and is higher than a common metal heating material. The resistance and the temperature of the material have good linear correlation, and the material is sensitive to temperature change and quick in response; the silicon substrate with good thermal conductivity is combined, so that the temperature is uniform, and local overheating is not easily caused. In the heating process of the heating wire, the temperature value is calculated by measuring the resistance value of the heating wire, and the result is real-time and accurate; the power supply can adjust the output power or voltage in real time through the temperature value, so that the atomization effect and the energy efficiency are improved. The Mo heating wire and the Mo electrode can also be used as passivation protective layers, so that the service life of the heating wire is further prolonged. The silicon film is provided with atomizing micropores arranged in an array, the structure of the atomizing micropores can be completely realized by an MEMS processing technology, and a metal thick film printing technology, a sintering technology or an embedding technology which is not friendly to the MEMS technology is not needed.
The above, only be the embodiment of the preferred of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, which are designed to be replaced or changed equally, all should be covered within the protection scope of the present invention.
Claims (6)
1. The utility model provides a but temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk, its characterized in that, includes silicon substrate (1), mo heater strip (2) and passivation protective layer (3), be provided with stock solution chamber (4) in silicon substrate (1), be provided with silicon membrane portion (5) on silicon substrate (1), be provided with a plurality of atomizing microchannel (6) that are the array and arrange on silicon membrane portion (5), atomizing microchannel (6) with stock solution chamber (4) communicate with each other, the tip of Mo heater strip (2) is provided with contact electrode (7), passivation protective layer (3) preparation is in on Mo heater strip (2), be provided with the position on passivation protective layer (3) and correspond contact electrode (7) dodge hole (8).
2. The MEMS heating atomization core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the passivation protection layer (3) is silicide.
3. The MEMS heating atomization core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the contact electrode (7) is made of Mo material.
4. The MEMS heating atomizing core capable of measuring the temperature based on the Mo heating resistance wire is characterized in that the depth of the atomizing micro-channel (6) is 2-300 um.
5. The MEMS heating atomizing core capable of measuring temperature based on the Mo heating resistance wire is characterized in that the thickness of the passivation protection layer (3) is 50nm-4um.
6. The MEMS heating atomization core capable of measuring the temperature based on the Mo heating resistance wire as claimed in claim 3, wherein the depth of the liquid storage cavity (4) can be 50-400 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221422825.9U CN218126977U (en) | 2022-06-07 | 2022-06-07 | But temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221422825.9U CN218126977U (en) | 2022-06-07 | 2022-06-07 | But temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218126977U true CN218126977U (en) | 2022-12-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221422825.9U Active CN218126977U (en) | 2022-06-07 | 2022-06-07 | But temperature measurement MEMS atomizing core that generates heat based on Mo heating resistor silk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218126977U (en) |
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2022
- 2022-06-07 CN CN202221422825.9U patent/CN218126977U/en active Active
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