CN104391015B - Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure - Google Patents
Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure Download PDFInfo
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- CN104391015B CN104391015B CN201410724904.9A CN201410724904A CN104391015B CN 104391015 B CN104391015 B CN 104391015B CN 201410724904 A CN201410724904 A CN 201410724904A CN 104391015 B CN104391015 B CN 104391015B
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Abstract
The invention discloses a capacitive humidity sensor of an integrated ultrasonic structure and a preparation method of the capacitive humidity sensor of the integrated ultrasonic structure. The capacitive humidity sensor comprises an ultrasonic transducer structure and multiple humidity sensitive capacitor structures, wherein the humidity sensitive capacitor structures are arranged above the ultrasonic transducer structure; the ultrasonic transducer structure comprises a substrate, a piezoelectric material layer and an intermediate metal layer which are sequentially arranged from bottom to top; the humidity sensitive capacitor structures comprise insulating layers, interdigital electrodes, passivation layers and humidity sensitive material layers which are sequentially arranged from bottom to top; the insulating layers are arranged on the intermediate metal layer; a cavity is formed in the lower surface of the substrate by corrosion and is used for adjusting the thickness of the substrate and further adjusting the resonant frequency of the ultrasonic transducer structure. The ultrasonic transducer releases an ultrasonic signal under the action of an electric signal with a certain frequency, so that energy is obtained by water molecules, the movement rate is increased, and water molecules relatively fast diffuse or escape from humidity sensitive materials. Therefore, the response speed of the sensor is increased.
Description
Technical field
The present invention relates to a kind of capacitance type humidity sensor of integrated ultrasound structure and preparation method thereof, belong to micro electronmechanical skill
Art.
Background technology
Humidity sensor is a kind of device of measurement humidity, is widely used in the fields such as meteorological research, commercial production.Due to
The speed of moisture movement is limited, when ambient humidity changes, when the measurement result change of sensor needs one section of response
Between；And sensor returns stagnant presence, then there is harmful effect to the certainty of measurement of sensor.
In order to improve response characteristic and the hysteresis characteristic of sensor, the method generally adopting at present is in sensor construction
Increase heating arrangement.Vaisala (exabyte) employs bending-type resistance in the product and humidity sensor is heated.2006
Year, ching-liang dai (name) etc. devises the polysilicon resistance structure of grid dress, for adding to the sensor construction of top
Heat.2009, youngdeuk kima et al. proposed a kind of sensor construction, and heater circuit and sensitization capacitance are in same
Layer, and sensitization capacitance is enclosed in centre, heated from surrounding.But, using heating arrangement humidity sensor it is necessary to warp
Moisture measurement could normally be carried out, measurement frequency is subject to sensor temperature rate of change after going through heat temperature raising and the process that cools
Impact, has much room for improvement.
Content of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides a kind of electricity of integrated ultrasound structure
Appearance formula humidity sensor and preparation method thereof, produces ultrasound wave using using ultrasound structure, and moisturize sub energy and diffusion
Speed, improves response characteristic and the hysteresis characteristic of sensor.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of capacitance type humidity sensor of integrated ultrasound structure, including ultrasonic transducer structures and some humidity sensitives electricity
Hold structure, humidity sensitive capacitance structure setting is above ultrasonic transducer structures；Described ultrasonic transducer structures include by down to
On the substrate, piezoelectric material layer and the intermediate metal layer that set gradually, humidity sensitive capacitance structure includes setting gradually from the bottom to top
Insulating barrier, interdigital electrode, passivation layer and humidity-sensitive material layer, insulating barrier is arranged on intermediate metal layer, interdigital electrode and passivation
Layer corresponds, and the insulating barrier of all humidity sensitive capacitance structures shares, the humidity-sensitive material layer of all humidity sensitive capacitance structures
Share；The lower surface of described substrate is formed by etching cavity, for adjusting substrate thickness, and then adjusts ultrasonic transducer structures
Resonant frequency.
A kind of preparation method of the capacitance type humidity sensor of integrated ultrasound structure, comprises the steps:
(1) prepare heavily doped silicon substrate, cavity is formed in the lower surface of substrate by back side corrosion；
(2) layer of piezo-electric material is deposited on substrate, and make it graphical using photoetching and etching technics, form piezoresistive material
The bed of material；
(3) sputter on piezoelectric material layer or evaporate layer of metal aluminum, and make it graphical using photoetching and etching technics,
Form intermediate metal layer；
(4) one layer of silicon oxide is deposited on intermediate metal layer and makes it graphical using photoetching and etching technics, formed absolutely
Edge layer 4；
(5) sputter on the insulating layer or evaporate layer of metal aluminum, and make it graphical using photoetching and etching technics, formed
Interdigital electrode；
(6) one layer of silicon nitride is deposited on interdigital electrode and makes it graphical using photoetching and etching technics, form passivation
Layer；
(7) deposit a strata acid imide over the passivation layer, and make it graphical using photoetching and etching technics, form wet sensitive
Material layer.
Beneficial effect: capacitance type humidity sensor of integrated ultrasound structure that the present invention provides and preparation method thereof, when right
When ultrasonic transducer structures act on the signal of telecommunication of certain frequency, ultrasonic signal can be discharged, this ultrasonic signal can make moisture
Son obtain energy, improve hydrone movement rate so as to quickly humidity-sensitive material layer by layer middle diffusion or escape, thus improving
The response speed of capacitance type humidity sensor and hysteresis characteristic.
Brief description
Fig. 1 is the structural representation of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is further described.
Be illustrated in figure 1 a kind of capacitance type humidity sensor of integrated ultrasound structure, if including ultrasonic transducer structures and
Humidity sensitization capacitance structure, humidity sensitive capacitance structure setting is above ultrasonic transducer structures；Described ultrasonic transducer knot
Structure includes substrate 1, piezoelectric material layer 2 and the intermediate metal layer 3 setting gradually from the bottom to top, humidity sensitive capacitance structure include by
Under the supreme insulating barrier 4 setting gradually, interdigital electrode 5, passivation layer 6 and humidity-sensitive material layer 7, insulating barrier 4 is arranged on intermetallic metal
On layer 3；The lower surface of described substrate 1 is formed by etching cavity, for adjusting substrate thickness, and then adjusts ultrasonic transducer knot
The resonant frequency of structure.
The preparation process of the capacitance type humidity sensor of above-mentioned integrated ultrasound structure is as follows:
(1) prepare heavily doped silicon substrate 1, cavity is formed in the lower surface of substrate 1 by back side corrosion；
(2) deposit a layer of piezo-electric material on substrate 1, and make it graphical using photoetching and etching technics, form piezoelectricity
Material layer 2；
(3) sputter on piezoelectric material layer 2 or evaporate layer of metal aluminum, and make its figure using photoetching and etching technics
Change, form intermediate metal layer 3；
(4) one layer of silicon oxide is deposited on intermediate metal layer 3 and makes it graphical using photoetching and etching technics, formed absolutely
Edge layer 4；
(5) sputter on insulating barrier 4 or evaporate layer of metal aluminum, and make it graphical using photoetching and etching technics, shape
Become interdigital electrode 5；
(6) one layer of silicon nitride is deposited on interdigital electrode 5 and makes it graphical using photoetching and etching technics, form passivation
Layer 6；
(7) a strata acid imide is deposited on passivation layer 6, and make it graphical using photoetching and etching technics, formed wet
Quick material layer 7.
The above be only the preferred embodiment of the present invention it should be pointed out that: for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (2)
1. a kind of capacitance type humidity sensor of integrated ultrasound structure it is characterised in that: include ultrasonic transducer structures and some
Humidity sensitive capacitance structure, humidity sensitive capacitance structure setting is above ultrasonic transducer structures；Described ultrasonic transducer structures
Including the substrate (1) setting gradually from the bottom to top, piezoelectric material layer (2) and intermediate metal layer (3), humidity sensitive capacitance structure bag
Include the insulating barrier (4) setting gradually from the bottom to top, interdigital electrode (5), passivation layer (6) and humidity-sensitive material layer (7), insulating barrier (4)
It is arranged on intermediate metal layer (3)；The lower surface of described substrate (1) is formed by etching cavity, for adjusting substrate thickness, enters
And adjust the resonant frequency of ultrasonic transducer structures.
2. a kind of preparation method of the capacitance type humidity sensor of integrated ultrasound structure it is characterised in that: comprise the steps:
(1) prepare heavily doped silicon substrate (1), cavity is formed in the lower surface of substrate (1) by back side corrosion；
(2) in substrate (1) upper deposit one layer of piezo-electric material, and make it graphical using photoetching and etching technics, form piezoresistive material
The bed of material (2)；
(3) in the upper sputtering of piezoelectric material layer (2) or evaporation layer of metal aluminum, and make it graphical using photoetching and etching technics,
Form intermediate metal layer (3)；
(4) make it graphical in intermediate metal layer (3) one layer of silicon oxide of upper deposit and using photoetching and etching technics, form insulation
Layer (4)；
(5) in the upper sputtering of insulating barrier (4) or evaporation layer of metal aluminum, and make it graphical using photoetching and etching technics, formed
Interdigital electrode (5)；
(6) make it graphical in interdigital electrode (5) one layer of silicon nitride of upper deposit and using photoetching and etching technics, form passivation layer
(6)；
(7) in passivation layer (6) upper deposit one strata acid imide, and make it graphical using photoetching and etching technics, form wet sensitive
Material layer (7).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410724904.9A CN104391015B (en) | 2014-12-03 | 2014-12-03 | Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure |
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| CN201410724904.9A CN104391015B (en) | 2014-12-03 | 2014-12-03 | Capacitive humidity sensor of integrated ultrasonic structure and preparation method of capacitive humidity sensor of integrated ultrasonic structure |
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| CN104391015A CN104391015A (en) | 2015-03-04 |
| CN104391015B true CN104391015B (en) | 2017-01-18 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10497748B2 (en) * | 2015-10-14 | 2019-12-03 | Qualcomm Incorporated | Integrated piezoelectric micromechanical ultrasonic transducer pixel and array |
| CN105486728B (en) * | 2015-11-27 | 2018-05-25 | 深圳市美思先端电子有限公司 | Capacitance type humidity sensor and its manufacturing method |
| CN106768050B (en) * | 2016-12-26 | 2020-02-14 | 上海集成电路研发中心有限公司 | Single-chip high-precision temperature and humidity sensor |
| CN109613065B (en) * | 2018-11-16 | 2021-03-16 | 东南大学 | Semiconductor humidity sensor and preparation method thereof |
| CN111044583B (en) * | 2019-11-27 | 2021-07-06 | 南通大学 | Humidity sensor chip |
| CN111122656A (en) * | 2019-12-04 | 2020-05-08 | 浙江省北大信息技术高等研究院 | Humidity sensor and preparation method thereof |
| CN112974198B (en) * | 2019-12-18 | 2022-07-26 | 京东方科技集团股份有限公司 | Capacitive micro-machined ultrasonic transducer unit, manufacturing method thereof and capacitive micro-machined ultrasonic transducer |
| AU2020256373B2 (en) * | 2020-01-07 | 2021-05-06 | Nantong University | Humidity sensor chip having three-electrode structure |
| CN111579603B (en) * | 2020-05-09 | 2021-10-26 | 北京航空航天大学 | MEMS capacitive humidity sensor integrating heating control and ultrasonic vibration |
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| CN102167531B (en) * | 2011-03-07 | 2012-11-07 | 西南科技大学 | Method for preparing expanded vermiculite by utilizing ultrasonic pretreatment way |
| CN103018289B (en) * | 2013-01-04 | 2015-07-08 | 东南大学 | Capacitive humidity sensor |
| CN103675041A (en) * | 2013-11-30 | 2014-03-26 | 江苏物联网研究发展中心 | Multi-range interdigital capacitive humidity sensor |
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