CN105203251A - Pressure sensing chip and processing method thereof - Google Patents
Pressure sensing chip and processing method thereof Download PDFInfo
- Publication number
- CN105203251A CN105203251A CN201510676138.8A CN201510676138A CN105203251A CN 105203251 A CN105203251 A CN 105203251A CN 201510676138 A CN201510676138 A CN 201510676138A CN 105203251 A CN105203251 A CN 105203251A
- Authority
- CN
- China
- Prior art keywords
- mems
- metal
- upper strata
- parallel plate
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a pressure sensing chip and a processing method thereof. The chip comprises an upper layer structure and a lower layer structure, wherein the lower layer structure comprises a lower layer substrate piece; MEMS parallel plate capacitors and an MEMS inductor which are connected in series are arranged on the lower layer substrate piece; the upper layer structure comprises upper layer substrate pieces, an MEMS pressure sensing film, an MEMS capacitor dielectric plate and a metal layer; the MEMS pressure sensing film is fixed on the upper layer substrate pieces, and placed above the lower layer substrate piece; the MEMS capacitor dielectric plate and the metal layer are fixed on the lower surface of the MEMS pressure sensing film; the MEMS capacitor dielectric plate is placed in between the two electrode plates of the capacitors; the metal layer is positioned above the MEMS inductor; the MEMS pressure sensing film is pressed to generate longitudinal displacement and drive the MEMS capacitor dielectric plate and the metal layer to move, so that the depth of the MEMS capacitor dielectric plate inserted into the MEMS parallel plate capacitors is changed and a magnetic gap between the metal layer and the MEMS inductor is also changed.
Description
Technical field
The present invention relates to pressure sensing chip, particularly relate to a kind of Internet of Things passive and wireless pressure sensing chip and job operation thereof.
Background technology
Internet of Things is called as the third wave of information industry after computing machine, internet, for 21st century global industry, urbanization process provides revolutionary infotech and intellectual technology.As subfoundation device and the internet-of-things terminal node-sensor of Internet of Things, to be the maximum and most basic link of total demand in whole Internet of Things industrial chain, the speed of development that direct ectocrine is networked by the technical merit of internet-of-things terminal node and related industry thereof and speed of development.
Pressure transducer is a kind of sensor commonly used the most, and it is widely used in various industrial automatic control environment, comprises numerous industries such as water conservancy and hydropower, automobile, Aero-Space, military project; And in daily life, as barometric surveying, blood pressure measurement, elevation carrection etc.Along with the rise of micro electronmechanical MEMS (Micro-Electro-MechanicalSystems, MEMS (micro electro mechanical system)) industry, pressure transducer is gradually to microminiaturized, integrated direction development.MEMS pressure sensing chip has that volume is little, quality is light, low cost and other advantages, is widely used in auto electronics at present: as TPMS, engine oil pressure sensor, automobile brake system air pressure probe etc.; Consumer electronics: as fields such as sphygmomanometer, cupboard scale, washing machine, dish-washing machine, refrigerator, domestic air conditionings.
For the pressure sensor of Internet of Things except requiring that it is highly sensitive, outside good reliability, the feature of low-power consumption and low cost also to be had.And present pressure transducer is all adopt single pressure sensitive unit mostly, sensitivity is limited, and be all active mode, when some mounting condition inconvenience, as underground structure, the places such as high-altitude building structure, the battery changing internet of things sensors node device has just become very large problem, thus greatly have impact on the widespread use of this sensor.
Summary of the invention
The technical problem to be solved in the present invention is that mostly being single pressure sensitive mode for existing pressure transducer causes the low and working sensor of transducer sensitivity to be all the defect of active mode, a kind of brand-new MEMS structure and method for transmitting signals are provided, realize the passive and wireless high sensitivity MEMS pressure sensing chip that a kind of applicable Internet of Things uses, this chip without the need to power supply just can wirelessly by pressure signal transmission to receiving end.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of pressure sensing chip is provided, comprises the superstructure and understructure that are connected;
Described understructure comprises underlying substrate sheet, and this underlying substrate sheet is provided with MEMS parallel plate capacitance and the MEMS telefault structure of series connection;
Superstructure comprises upper strata substrate slice, MEMS pressure sensitive film, MEMS capacitor dielectric plate and metal level, MEMS pressure sensitive film is fixed on the substrate slice of upper strata, and being placed in above underlying substrate sheet, MEMS capacitor dielectric plate and metal level are all fixed on the lower surface of MEMS pressure sensitive film; MEMS capacitor dielectric plate is placed between two battery lead plates of MEMS parallel plate capacitance, and metal level is positioned at the top of MEMS inductance;
MEMS pressure sensitive film pressurized produces length travel, and drive MEMS capacitor dielectric plate and metal level to move, the degree of depth making MEMS capacitor dielectric plate insert MEMS parallel plate capacitance changes, and the magnetic gap between metal level and MEMS telefault structure also changes.
In pressure sensing chip of the present invention, described metal level is MEMS inductance magnetically soft alloy layer.
In pressure sensing chip of the present invention, upper strata substrate slice and underlying substrate sheet connect into an entirety by bonding technology.
In pressure sensing chip of the present invention, upper strata substrate slice, MEMS pressure sensitive film, MEMS capacitor dielectric plate and metal level are structure as a whole.
In pressure sensing chip of the present invention, MEMS telefault structure is the planar spiral structures structure on underlying substrate sheet.
In pressure sensing chip of the present invention, the upper surface of MEMS pressure sensitive film is empty structure.
The present invention also provides a kind of job operation of pressure sensing chip, comprises the following steps:
Deposit one layer insulating on underlying substrate sheet, and utilize the photoetching of standard and dry corrosion process to be removed by the insulation course of the periphery bond area of underlying substrate sheet;
Sputter layer of metal layer on the insulating layer, the planar graph structure of MEMS parallel plate capacitance is obtained on the metal layer by photoetching and metal erosion technique, comprise two battery lead plates and terminals, and terminals of MEMS inductance helical structure, these terminals are connected with the terminals of a parallel plate electrode of MEMS parallel plate capacitance;
Deposit one layer insulating on the metal layer, with photoetching and the dry etching removal redundance of standard, expose the planar graph structure of MEMS parallel plate capacitance, and form a perforate at the terminals place of MEMS inductance helical structure, the metal level below perforate is exposed;
Spin coating thick layer glue again on underlying substrate sheet, and by the litho developing process of standard, expose the planar graph structure of MEMS parallel plate capacitance; Recycling metal electroplating process, plating has the MEMS parallel plate capacitance structure of certain altitude, realizes three-dimensional MEMS parallel plate capacitance structure;
The other layer of metal layer of deposit on the insulation course at place, MEMS inductance helical structure region, the terminals of the MEMS inductance helical structure of this metal level and tapping form electrical connection, required MEMS inductance helical structure is obtained again by photoetching and metal erosion technique, and the another one terminals of this MEMS inductance helical structure, these terminals and the terminals of the another one parallel plate electrode of MEMS parallel plate capacitance are before formed and are electrically connected;
At MEMS induction areas spin coating thick layer glue, and make the figure of MEMS inductance helical structure by lithography, recycling metal electroplating process, plating has certain thickness MEMS spiral inductance structure;
Upper strata substrate slice is first thinning by standard mechanical grinding technics, then utilizes standard photoetching and etching process to make a cavity on the top of upper strata substrate slice, and the bottom of this cavity is the upper surface of the movable film of MEMS pressure sensitive;
Utilize the photoetching of multistep standard and deep reaction ion etch process in the bottom of upper strata substrate slice, the MEMS pressure sensitive membrane structure being with MEMS capacitor dielectric plate can be obtained; And obtain the bond area of upper strata substrate slice and underlying substrate sheet;
In the bottom deposit layer of metal of upper strata substrate slice, adopt standard photoetching and etching process to remove the metal at other position, only retain the metal layer part at position corresponding to the MEMS inductance helical structure in itself and understructure;
By upper strata substrate slice and underlying substrate sheet bonding.
In job operation of the present invention, the etching process adopted when making described cavity is deep reaction ion etching or wet etching.
In job operation of the present invention, the layer of metal of the bottom institute deposit of upper strata substrate slice is for having the noncrystal magnetically soft alloy of high permeability.
In job operation of the present invention, when upper strata substrate slice and underlying substrate sheet all adopt silicon chip, by the MEMS Si V groove technique of standard, two substrate slices are connected into an entirety.
The beneficial effect that the present invention produces is: pressure sensing chip of the present invention causes the change of MEMS electric capacity and inductance by pressure change, then changes the resonance frequency of passive resonant circuit; And the variable signal of pressure spreads out of with outside inductive coupling wireless mode, the work of sensor chip, without the need to power supply, realizes the pressure sensing of passive and wireless.The present invention can solve existing pressure sensing chip insufficient sensitivity of running into and change the power supply problem caused such as constant in Internet of Things application.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is passive and wireless pressure sensing chip schematic diagram of the present invention;
Fig. 2 is the LC resonant tank of MEMS pressure sensing chip of the present invention;
Fig. 3 (a) is the vertical view of embodiment of the present invention understructure;
Fig. 3 (b) is A-A cross section view in Fig. 3 (a);
Fig. 3 (c) is B-B cross section view in Fig. 3 (a);
Fig. 4 (a) is the vertical view of embodiment of the present invention superstructure;
Fig. 4 (b) is the side view of embodiment of the present invention superstructure;
Fig. 5 is embodiment of the present invention passive and wireless pressure sensing chip structural representation.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1 and Figure 2, the sensor chip of the embodiment of the present invention forms LC resonant tank by MEMS electric capacity and MEMS inductance, MEMS inductance is wherein made up of spiral winding and the movable metal film of MEMS pressure sensitive, and the movable metal film suspension support of pressure sensitive is wherein above spiral winding; MEMS electric capacity is wherein made up of fixed parallel plate capacitance and MEMS pressure sensitive capacitor dielectric plate, and pressure sensitive capacitor dielectric plate suspension support is wherein between two pole plates of parallel plate capacitance.When there being pressure to change, there is the length travel perpendicular to face in MEMS pressure sensitive film.This degree of depth making the capacitor dielectric plate be fixed on pressure sensitive film be inserted into two fixed pole plates on the one hand changes, and the dielectric media constant between capacitor plate is changed, thus causes MEMS capacitance to change.On the other hand, the movement of MEMS pressure sensitive film also makes the spacing of metal film conductor layer fixed thereon and inductance helix ring layer change, thus causes MEMS inductance value to change.So the change of pressure can cause the electric capacity in loop and inductance all to change, and finally causes the frequency of LC resonant tank to change.Like this, the change of pressure just can be characterized by the change of the resonance frequency of LC resonant tank.When working sensor, by the resonant frequency signal coupling output of the coupling inductance of outside reading circuit by sensor, then magnitude of voltage can be converted to.
In one embodiment of the present of invention, pressure sensing chip is the pressure sensing chip of Internet of Things passive and wireless, comprises superstructure and understructure.As shown in Fig. 3 (a)-Fig. 3 (c), understructure is with the MEMS parallel plate capacitance 2 be connected in series of MEMS technology realization and MEMS inductance spiral winding 3 on underlying substrate sheet 1.MEMS electric capacity is wherein passable, but is not limited to, and is three-dimensional parallel flat (Fig. 3 b) capacitance structure realized in microplating mode.MEMS inductance spiral winding is wherein passable, but is not limited to, and is the helical coil structure (as Suo Shi Fig. 3 (a), Fig. 3 (b)) of sputtering or plating.MEMS electric capacity wherein and MEMS inductance spiral winding adopt the mode of series connection to be connected, as depicted in figs. 1 and 2.
The superstructure of chip is as shown in Fig. 4 (a) He Fig. 4 (b), superstructure comprises upper strata substrate slice 6, be fixed on the MEMS pressure sensitive film 7 of a suspension structure on substrate slice 6, and be fixed on MEMS capacitor dielectric plate 8 and the metal level 9 (can be MEMS inductance magnetically soft alloy layer) of this MEMS pressure sensitive film 7 lower surface.By adopting abrasive disc thinning to the upper surface of upper strata substrate slice 6, and the micro-processing method of deep groove etching, as traditional wet method or dry corrosion process, the empty structure of pressure sensitive film 7 upper surface can be obtained.Generally, pressure sensitive film is very thin, only has an appointment 10 microns, and the capacitor dielectric plate below sense film is very thin (about 10 microns) also.So whole superstructure all can be very thin when not comprising cavity, so just cannot take, in order to the convenience of taking, so the certain thickness (according to appointment 100 microns) of upper strata substrate slice will be ensured.The present invention forms empty structure on pressure sensitive film 7 surface, to increase the thickness of pressure sensitive film 7, thus conveniently takes.
By adopting multistep standard photoetching and deep reaction ion etch process to upper strata substrate slice 6 lower surface, the MEMS pressure sensitive membrane structure being with MEMS capacitor dielectric plate can be realized.The deposit of employing standard, photoetching and etching process can obtain the metal level 9 (as Suo Shi Fig. 4 (b)) being deposited to MEMS pressure sensitive film 7 lower surface.This metal level 9 is passable, but is not limited to, and is noncrystal magnetically soft alloy, has high magnetoconductivity.
The double-layer structure up and down of chip, can (can be silicon chip by underlying substrate sheet 1, glass or stupalith etc.) and upper strata substrate slice 6 (can be silicon chip) with the MEMS bonding technology of standard (as silicon-silicon bond close, glass-silicon bonding, soldering etc.) complete bonding, as shown in Figure 5.When there being pressure to act on the upper surface of MEMS pressure sensitive film 7, it can deform, and forms length travel.The degree of depth like this with regard to causing MEMS capacitor dielectric plate 8 to insert MEMS parallel plate capacitance 2 changes, and the dielectric media constant between capacitor plate is changed, thus causes MEMS capacitance to change.The variable quantity of its capacitance is:
wherein Δ C is capacitance change, and Δ ε is dielectric media constant variable quantity, and S is no is the area of parallel plate electrode, and d is the spacing of parallel plate electrode.
The pressurized length travel of MEMS pressure sensitive film 7, makes the magnetic gap between MEMS inductance spiral winding 3 and metal level 9 change simultaneously, then causes the change of magnetic flux, finally cause the change of MEMS inductance.Wherein the variation relation in inductance and gap can be reduced to:
Wherein, Δ L and L
0that magnetic gap changes the inductance value variable quantity and former inductance value that cause, Δ δ and δ respectively
0the variable quantity of magnetic gap and former magnetic gap value respectively.
Analyzed from above, change while pressure changes the MEMS electric capacity and MEMS inductance caused, the change of the resonance frequency of the LC resonant tank be made up of electric capacity and inductance can be caused.When working sensor, this change being changed the resonance frequency caused by pressure, can by the coupling inductance coupling output of outside reading circuit.
The job operation of Internet of Things passive and wireless pressure sensing chip of the present invention mainly comprises the following steps:
Deposit one layer insulating 4 on underlying substrate sheet, as SiO2 or Si3N4 insulation course, and utilizes the photoetching of standard and dry corrosion process to be removed by the insulation course of the periphery bond area of underlying substrate sheet;
Insulation course 4 sputters layer of metal layer 5, as copper Cu;
This metal level 5 is obtained by photoetching and metal erosion technique the planar graph structure (comprising two battery lead plates and terminals) of MEMS parallel plate capacitance 2, and terminals of MEMS inductance helical structure 3, these terminals are connected with the terminals of a parallel plate electrode of MEMS electric capacity;
Deposit one layer insulating 4 on metal level 5, with photoetching and the dry etching removal redundance of standard, expose the planar graph structure of aforesaid MEMS parallel plate capacitance, and form a perforate 31 at that terminals place of MEMS inductance helical structure 3, the metal level 5 below perforate 31 is exposed;
Spin coating thick layer glue on sheet, as AZ4620, and by the litho developing process of standard, exposes the planar graph structure of MEMS parallel plate capacitance 2; Recycling metal electroplating process, plating has the MEMS parallel plate capacitance structure of certain altitude, as plating thick copper Cu, realizes three-dimensional MEMS parallel plate capacitance structure;
The other layer of metal layer of deposit on the insulation course at place, MEMS inductance helical structure 3 region, the terminals of the helical structure at this metal level and aforementioned perforate 31 place form electrical connection, the helical structure of required MEMS inductance is obtained again by photoetching and metal erosion technique, and the another one terminals of this helical structure, these terminals and the terminals of the another one parallel plate electrode of MEMS electric capacity are before formed and are electrically connected;
At MEMS induction areas spin coating thick layer glue, as AZ4620, and make the figure of the helical structure of MEMS inductance by lithography, recycling metal electroplating process, plating has certain thickness MEMS inductance helical structure 3, as plating thick copper Cu;
Upper strata substrate slice is first thinning by standard mechanical grinding technics, utilize standard photoetching and etching process (deep reaction ion etching or wet etching) to make a cavity again on the top of upper strata substrate slice, the bottom of this cavity is the upper surface of the movable film of MEMS pressure sensitive;
Utilize the photoetching of multistep standard and deep reaction ion etch process in the bottom of upper strata substrate slice 6, the MEMS pressure sensitive membrane structure 7 being with MEMS capacitor dielectric plate 8 can be obtained; And obtain the bond area of upper strata substrate slice 6 and underlying substrate sheet 1;
In the bottom deposit layer of metal of upper strata substrate slice 6, the photoetching of employing standard and etching process remove the metal at other position, only retain metal level 9 part at position corresponding to the MEMS spiral winding in itself and understructure, this metal level 9 can be but be not limited to noncrystal magnetically soft alloy, it has high magnetoconductivity, as Rhometal NiFe;
By upper strata substrate slice 6 and underlying substrate sheet 1 bonding, when upper strata substrate slice 6 and underlying substrate sheet 1 all adopt silicon chip, the MEMS Si V groove technique by standard connects into an entirety, as shown in Figure 5.
Particular advantages of the present invention:
1) a kind of structure is proposed simple, containing high sensitivity pressure sensing chip structure and the job operation of electric capacity and inductance dual-pressure sensing unit.
2) this pressure sensing chip adopts idle design, and pressure reads and adopts wireless mode, is the passive and wireless pressure sensing chip of a applicable Internet of Things application.Meet the low cost of Internet of things node device and the demand of low-power consumption.
3) the MEMS chip structure of this invention is simple, and technique is simple, is easy to realize large-scale production.
4) MEMS electric capacity can adopt parallel plate structure, is arranged on dielectric substrate sheet, can reduces stray capacitance.MEMS inductance adopts the spiral winding of electroplating technology, and the noncrystal magnetically soft alloy of high permeability, can greatly improve quality factor q value.This Structure and energy design ensure that high-performance and the high reliability of sensor.
The high sensitivity passive and wireless pressure sensing chip that the present invention proposes, in pressure sensitive, sensing principle and information reading aspect all have novelty, can improve the performance of pressure transducer.The present invention passes through the movement of MEMS pressure sensitive film strips dynamic condenser dielectric-slab and inductance magnetically soft alloy layer, when pressure is changed, changes the size of MEMS electric capacity and MEMS inductance simultaneously, is the combination becoming dielectric capacitance sensing and become magnetic resistance inductance sensing.In the present invention, the change of pressure can cause the consecutive variations of micro-electric capacity and micro-inductance, and variation range is large, highly sensitive, and MEMS electric capacity, inductance component size is little, and processing technology is simple, is easy to encapsulation, is applicable to large-scale production.Pressure transducer of the present invention is than the single change electric capacity of tradition, and the pressure sensitive method of resistance or inductance, can improve the sensitivity of sensor greatly, improves the reliability of system q and sensor chip.
Meanwhile, pressure sensing chip of the present invention causes the change of MEMS electric capacity and inductance by pressure change, then changes the resonance frequency of passive resonant circuit; And the variable signal of pressure spreads out of with outside inductive coupling wireless mode, the work of sensor chip, without the need to power supply, realizes the pressure sensing of passive and wireless.
To sum up, the present invention can solve existing pressure sensing chip insufficient sensitivity of running into and change the power supply problem caused such as constant in Internet of Things application.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection domain that all should belong to claims of the present invention.
Claims (10)
1. a pressure sensing chip, is characterized in that, comprises the superstructure and understructure that are connected;
Described understructure comprises underlying substrate sheet, and this underlying substrate sheet is provided with MEMS parallel plate capacitance and the MEMS telefault structure of series connection;
Superstructure comprises upper strata substrate slice, MEMS pressure sensitive film, MEMS capacitor dielectric plate and metal level, MEMS pressure sensitive film is fixed on the substrate slice of upper strata, and being placed in above underlying substrate sheet, MEMS capacitor dielectric plate and metal level are all fixed on the lower surface of MEMS pressure sensitive film; MEMS capacitor dielectric plate is placed between two battery lead plates of MEMS parallel plate capacitance, and metal level is positioned at the top of MEMS inductance;
MEMS pressure sensitive film pressurized produces length travel, and drive MEMS capacitor dielectric plate and metal level to move, the degree of depth making MEMS capacitor dielectric plate insert MEMS parallel plate capacitance changes, and the magnetic gap between metal level and MEMS telefault structure also changes.
2. pressure sensing chip according to claim 1, is characterized in that, described metal level is MEMS inductance magnetically soft alloy layer.
3. pressure sensing chip according to claim 1, is characterized in that, upper strata substrate slice and underlying substrate sheet connect into an entirety by bonding technology.
4. Internet of Things passive and wireless pressure sensing chip according to claim 1, is characterized in that, upper strata substrate slice, MEMS pressure sensitive film, MEMS capacitor dielectric plate and metal level are structure as a whole.
5. pressure sensing chip according to claim 1, is characterized in that, MEMS telefault structure is the planar spiral structures on underlying substrate sheet.
6. pressure sensing chip according to claim 1, is characterized in that, the upper surface of MEMS pressure sensitive film is empty structure.
7. based on a job operation for the pressure sensing chip of claim 1, it is characterized in that, comprise the following steps:
Deposit one layer insulating on underlying substrate sheet, and utilize the photoetching of standard and dry corrosion process to be removed by the insulation course of the periphery bond area of underlying substrate sheet;
Sputter layer of metal layer on the insulating layer, the planar graph structure of MEMS parallel plate capacitance is obtained on the metal layer by photoetching and metal erosion technique, comprise two battery lead plates and terminals, and terminals of MEMS inductance helical structure, these terminals are connected with the terminals of a parallel plate electrode of MEMS parallel plate capacitance;
Deposit one layer insulating on the metal layer, with photoetching and the dry etching removal redundance of standard, expose the planar graph structure of MEMS parallel plate capacitance, and form a perforate at the terminals place of MEMS inductance helical structure, the metal level below perforate is exposed;
Spin coating thick layer glue again on underlying substrate sheet, and by the litho developing process of standard, expose the planar graph structure of MEMS parallel plate capacitance; Recycling metal electroplating process, plating has the MEMS parallel plate capacitance structure of certain altitude, realizes three-dimensional MEMS parallel plate capacitance structure;
The other layer of metal layer of deposit on the insulation course at place, MEMS inductance helical structure region, the terminals of the MEMS inductance helical structure of this metal level and tapping form electrical connection, required MEMS inductance helical structure is obtained again by photoetching and metal erosion technique, and the another one terminals of this MEMS inductance helical structure, these terminals and the terminals of the another one parallel plate electrode of MEMS parallel plate capacitance are before formed and are electrically connected;
At MEMS induction areas spin coating thick layer glue, and make the figure of MEMS inductance helical structure by lithography, recycling metal electroplating process, plating has certain thickness MEMS spiral inductance structure;
Upper strata substrate slice is first thinning by standard mechanical grinding technics, then utilizes standard photoetching and etching process to make a cavity on the top of upper strata substrate slice, and the bottom of this cavity is the upper surface of the movable film of MEMS pressure sensitive;
Utilize the photoetching of multistep standard and deep reaction ion etch process in the bottom of upper strata substrate slice, the MEMS pressure sensitive membrane structure being with MEMS capacitor dielectric plate can be obtained; And obtain the bond area of upper strata substrate slice and underlying substrate sheet;
In the bottom deposit layer of metal of upper strata substrate slice, adopt standard photoetching and etching process to remove the metal at other position, only retain the metal layer part at position corresponding to the MEMS inductance helical structure in itself and understructure;
By upper strata substrate slice and underlying substrate sheet bonding.
8. job operation according to claim 6, is characterized in that, the etching process adopted when making described cavity is deep reaction ion etching or wet etching.
9. job operation according to claim 6, is characterized in that, the layer of metal of the bottom institute deposit of upper strata substrate slice is for having the noncrystal magnetically soft alloy of high permeability.
10. job operation according to claim 6, is characterized in that, when upper strata substrate slice and underlying substrate sheet all adopt silicon chip, by the MEMS Si V groove technique of standard, two substrate slices is connected into an entirety.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510676138.8A CN105203251B (en) | 2015-10-16 | 2015-10-16 | Pressure sensing chip and its processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510676138.8A CN105203251B (en) | 2015-10-16 | 2015-10-16 | Pressure sensing chip and its processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105203251A true CN105203251A (en) | 2015-12-30 |
| CN105203251B CN105203251B (en) | 2018-06-08 |
Family
ID=54951050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510676138.8A Expired - Fee Related CN105203251B (en) | 2015-10-16 | 2015-10-16 | Pressure sensing chip and its processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105203251B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN108362407A (en) * | 2017-06-08 | 2018-08-03 | 深圳信息职业技术学院 | Capacitance pressure transducer, and pressure measurement circuitry |
| CN112683427A (en) * | 2020-11-26 | 2021-04-20 | 南京高华科技股份有限公司 | LC composite MEMS pressure sensor and preparation method thereof |
| CN112683428A (en) * | 2020-11-26 | 2021-04-20 | 南京高华科技股份有限公司 | MEMS inductive pressure sensor and preparation method thereof |
| CN113447166A (en) * | 2021-08-30 | 2021-09-28 | 南京高华科技股份有限公司 | MEMS pressure sensor based on frequency detection principle and preparation method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2277823A2 (en) * | 2009-06-18 | 2011-01-26 | Imec | Method for forming MEMS devices having low contact resistance and devices obtained thereof |
| CN102967409A (en) * | 2012-12-03 | 2013-03-13 | 东南大学 | Wireless inactive capacitive gas pressure sensor |
| CN103674405A (en) * | 2013-12-13 | 2014-03-26 | 中北大学 | Differential type HTCC wireless passive high-temperature pressure sensor and manufacturing method thereof |
| CN103926026A (en) * | 2014-05-04 | 2014-07-16 | 厦门大学 | Built-in high-temperature wireless pressure sensor |
| CN104535228A (en) * | 2015-01-28 | 2015-04-22 | 厦门大学 | LC (inductance-capacitance) wireless and passive pressure sensor without up-down interconnected electrodes |
| CN204705422U (en) * | 2015-07-06 | 2015-10-14 | 中北大学 | A kind of passive pressure sensing head based on HTCC technology |
| CN205049287U (en) * | 2015-10-16 | 2016-02-24 | 武汉工程大学 | Passive wireless pressure sensing chip of thing networking |
-
2015
- 2015-10-16 CN CN201510676138.8A patent/CN105203251B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2277823A2 (en) * | 2009-06-18 | 2011-01-26 | Imec | Method for forming MEMS devices having low contact resistance and devices obtained thereof |
| CN102967409A (en) * | 2012-12-03 | 2013-03-13 | 东南大学 | Wireless inactive capacitive gas pressure sensor |
| CN103674405A (en) * | 2013-12-13 | 2014-03-26 | 中北大学 | Differential type HTCC wireless passive high-temperature pressure sensor and manufacturing method thereof |
| CN103926026A (en) * | 2014-05-04 | 2014-07-16 | 厦门大学 | Built-in high-temperature wireless pressure sensor |
| CN104535228A (en) * | 2015-01-28 | 2015-04-22 | 厦门大学 | LC (inductance-capacitance) wireless and passive pressure sensor without up-down interconnected electrodes |
| CN204705422U (en) * | 2015-07-06 | 2015-10-14 | 中北大学 | A kind of passive pressure sensing head based on HTCC technology |
| CN205049287U (en) * | 2015-10-16 | 2016-02-24 | 武汉工程大学 | Passive wireless pressure sensing chip of thing networking |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN108362407A (en) * | 2017-06-08 | 2018-08-03 | 深圳信息职业技术学院 | Capacitance pressure transducer, and pressure measurement circuitry |
| CN112683427A (en) * | 2020-11-26 | 2021-04-20 | 南京高华科技股份有限公司 | LC composite MEMS pressure sensor and preparation method thereof |
| CN112683428A (en) * | 2020-11-26 | 2021-04-20 | 南京高华科技股份有限公司 | MEMS inductive pressure sensor and preparation method thereof |
| CN112683427B (en) * | 2020-11-26 | 2022-04-29 | 南京高华科技股份有限公司 | LC composite MEMS pressure sensor and preparation method thereof |
| CN113447166A (en) * | 2021-08-30 | 2021-09-28 | 南京高华科技股份有限公司 | MEMS pressure sensor based on frequency detection principle and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105203251B (en) | 2018-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105203251A (en) | Pressure sensing chip and processing method thereof | |
| CN105938021B (en) | A kind of multilayer inductor passive and wireless LC temperature sensors | |
| CN103213942B (en) | A kind of preparation method of passive and wireless electric capacity formula humidity sensor | |
| CN103438936B (en) | Based on the condenser type temperature of SOI sheet device layer silicon anode linkage, humidity and baroceptor integrated manufacturing method | |
| CN104677528A (en) | Capacitive pressure sensor and preparation method thereof | |
| CN105452853A (en) | Temperature/humidity sensor | |
| CN203365045U (en) | Capacitive air pressure sensor of microelectronic mechanical system | |
| CN103487474A (en) | MEMS (micro-electromechanical systems) capacitive humidity sensor with high sensitivity and fast response | |
| CN104697680A (en) | Capacitive pressure sensor and manufacturing method thereof | |
| CN103434999A (en) | Integrated manufacturing method for capacitance type temperature, humidity, air pressure and acceleration sensors based on anodic bonding of SOI (silicon on insulator) sheet silicon substrate | |
| CN102967409A (en) | Wireless inactive capacitive gas pressure sensor | |
| CN110108381A (en) | LC passive wireless sensor that is a kind of while detecting temperature, humidity | |
| CN104535228A (en) | LC (inductance-capacitance) wireless and passive pressure sensor without up-down interconnected electrodes | |
| CN205049287U (en) | Passive wireless pressure sensing chip of thing networking | |
| CN102620864B (en) | Capactive micro-machined ultrasonic transducer (CMUT)-based super-low range pressure sensor and preparation method thereof | |
| CN105043581B (en) | A kind of wireless and passive MEMS temperature sensor and preparation method thereof | |
| CN102520032A (en) | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof | |
| CN212569097U (en) | Magnetic field sensor based on film bulk acoustic resonator | |
| CN109580981B (en) | Wind speed sensor based on flexible inductor-silicon-based inductor structure | |
| CN103837290B (en) | High-precision capacitance pressure transducer, | |
| CN107329004A (en) | A kind of contactless MEMS autoexcitations stilling the theatre electrical resistivity survey examining system and its detection method based on electrostatic induction principle | |
| CN101531334B (en) | Magnetic drive micro-inertial sensor for increasing detection capacitance and preparation method | |
| CN103454345B (en) | Based on the marine biochemical matter monitoring sensor of CMUT and preparation thereof and measuring method | |
| CN107991632A (en) | A kind of new magnetic fluid-piezoelectric thin-film structure device and its manufacture method | |
| CN104986719A (en) | Wireless passive MEMS temperature and humidity integrated sensor and manufacturing method for same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180608 Termination date: 20201016 |