CN204705422U - A kind of passive pressure sensing head based on HTCC technology - Google Patents
A kind of passive pressure sensing head based on HTCC technology Download PDFInfo
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- CN204705422U CN204705422U CN201520476152.9U CN201520476152U CN204705422U CN 204705422 U CN204705422 U CN 204705422U CN 201520476152 U CN201520476152 U CN 201520476152U CN 204705422 U CN204705422 U CN 204705422U
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Abstract
The utility model discloses a kind of passive pressure sensing head based on HTCC technology, it relates to pressure sensor technique field.It comprises reading circuit apotheca, high temperature resistant heat insulation layer, passive pressure-sensitive microstructure and capping, the front end of high temperature resistant heat insulation layer is provided with passive pressure-sensitive microstructure, the rear end of high temperature resistant heat insulation layer is provided with reading circuit apotheca, the antenna receive circuit that can detect resonance frequency change in passive pressure-sensitive microstructure is provided with in reading circuit apotheca, the front end of passive pressure-sensitive microstructure is provided with capping, reading circuit apotheca, high temperature resistant heat insulation layer, passive pressure-sensitive microstructure is integrated in a sensing head, passive pressure-sensitive microstructure adopts the pressure-sensitive microstructure of High Temperature Co Fired Ceramic aluminium oxide casting belt and conduction platinum slurry.The utility model structure is simple, and reasonable in design, good stability, highly sensitive, ensure that the performance of pressure sensitive structural in hot environment, reliability is high, practical.
Description
Technical field
The utility model relates to pressure sensor technique field, be specifically related to a kind of passive pressure sensing head based on HTCC technology be operated in more than 800 DEG C 1 the following hot environment of atmospheric pressure.
Background technology
Hot environment usually makes presser sensor Deterioration of Structural Performance, such as, the micromachined silicon pressure sensor design being widely used in industrial circle is based on can the pressure sensitive cells of silicon thin film of deformation, with the collection in conjunction with the complete paired data for the treatment of circuit of pressure drag or capacitance structure, but, the external environment of MEMS silicon pressure sensor is limited by the temperature sensitivity of pressure drag structure and the high temperature resistant limit of material itself, for example, in the compressor of turbine gas engine, sensor is just needed to have reliable high-temperature stability, therefore, stability is the critical problem that test sensor uses under the high temperature conditions.
Traditional sensors and the extraneous transmission work needed by the data that gone between, such data lead must stand the test of hot environment, its stability is difficult to long-term guarantee, on the other hand, also irreversible change can be there is 600 DEG C time in the Ohmic contact of electrical lead and silicon sensor, with the current achievement in research to metal-semiconductor Ohmic contact, be difficult to more than the Ohmic contact of 600 DEG C, if reduce sensor temperature by water-cooled and heat insulation mode more further, so will greatly increase complicacy and the reliability of sensor, equally, the encapsulation problem of sensor self also will test designer, more promising exotic material such as silit, stupalith is for making pyrostat, silit sensor adopts fexible film to measure pressure value by pressure drag mode, this technology demonstrates larger application future at high-temperature field, but in manufacture craft, lack encapsulation technology ripe as silicon, at present, High Temperature Co Fired Ceramic technology is applied to circuit substrate manufacture, in automobile making, the application aspect development such as the sensor in communication base station and mobile phone and integrated circuit are very fast.
Moving back the technical matters of performance-based and electrical lead loose contact in order to solve pressure sensitive structural high temperature, designing a kind of novel passive pressure sensing head based on HTCC technology or necessary.
Utility model content
For the deficiency that prior art exists, the utility model object is to provide a kind of passive pressure sensing head based on HTCC technology, and structure is simple, reasonable in design, good stability, highly sensitive, ensure that the performance of pressure sensitive structural in hot environment, reliability is high, practical.
To achieve these goals, the utility model realizes by the following technical solutions: a kind of passive pressure sensing head based on HTCC technology, comprise reading circuit apotheca, high temperature resistant heat insulation layer, passive pressure-sensitive microstructure and capping, the front end of high temperature resistant heat insulation layer is provided with passive pressure-sensitive microstructure, the rear end of high temperature resistant heat insulation layer is provided with reading circuit apotheca, the antenna receive circuit that can detect resonance frequency change in passive pressure-sensitive microstructure is provided with in reading circuit apotheca, the front end of passive pressure-sensitive microstructure is provided with capping, reading circuit apotheca, high temperature resistant heat insulation layer, passive pressure-sensitive microstructure is integrated in a sensing head, can miniaturized pressure Sensitive Apparatus, reduce it to take up room and be convenient to expand its use occasion.
As preferably, the pressure-sensitive microstructure that described passive pressure-sensitive microstructure adopts alumina high temperature common burning porcelain casting belt to build in conjunction with thick film printing technique, the passive electric circuit of passive pressure-sensitive microstructure adopts thick film screen printing platinum slurry to complete, overall employing high temperature co-firing technique, the common sintering of pottery and platinum is completed at 1500 DEG C, because platinum has higher fusing point and inertia, LC resonant circuit at high temperature still can not be oxidized and normally.
As preferably, described passive pressure-sensitive microstructure is provided with seven layers from top to bottom, and ground floor is pressure sensitive layer, and the centre of pressure sensitive layer is stress and deformation region, the below of pressure sensitive layer is printed with step on electric capacity, and on electric capacity, step is connected with toroidal inductor; The second layer lower surface of passive pressure-sensitive microstructure is printed with toroidal inductor, interconnected by through hole slurry between the second layer and the toroidal inductor of ground floor; The third layer upper surface of passive pressure-sensitive microstructure is printed with step under electric capacity, lower surface printed inductor, and bury cavity structure in the second layer and the punching of third layer cast sheet centre are formed with, cavity structure communicates with the vacuum orifice on ground floor surface; The 4th layer of passive pressure-sensitive microstructure is all printed with telefault to layer 6 lower surface, and the 4th layer and third layer, telefault between layer 6 and layer 5 are all interconnected by through hole slurry; The telefault two ends that on described electric capacity, under step, electric capacity, step is interconnected with multilayer are connected, step composition LC resonant circuit under step, telefault, electric capacity on electric capacity; The 4th layer of described passive pressure-sensitive microstructure forms concave structure to layer 7 by punching, is provided with the high temperature resistant SmCo magnetive cord strengthening electromagnetic field directivity in concave structure; Passive pressure-sensitive microstructure have employed multilayer interconnect inductance coil and high temperature resistant SmCo magnetive cord, greatly enhance the inductance value of telefault, and the electromagnetic wave making telefault launch has more directivity, the stop that finally can overcome thermofin accept by the antenna in the reading circuit apotheca of rear end.
As preferably, described high temperature resistant heat insulation layer adopts aluminium oxide ceramics thermofin, the thickness of high temperature resistant heat insulation layer is 2cm, the effect of high temperature resistant heat insulation layer is intercepted spreading the heat of coming from passive pressure-sensitive microstructure, by the thermal conductivity that aluminium oxide is lower, make the reading circuit of sensing head rear end from high temperature attack, so that it normally works.
The beneficial effects of the utility model: passive pressure sensing head can be operated in higher than 800 DEG C, extreme environment lower than 1 atmospheric high-temperature low-pressure, framework principle of work is simple, good stability, reliability is high, and pressure sensitive structural itself adopts high-melting-point, prepared by the material of high strength, in high temperature environments there is robustness, have processibility, easily packaging effects concurrently, and under solving high temperature, high temperature moves back the problem of performance-based and Ohmic contact inefficacy, good stability simultaneously, highly sensitive, reliability is high.
Accompanying drawing explanation
The utility model is described in detail below in conjunction with the drawings and specific embodiments;
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structural representation of the passive pressure-sensitive microstructure of the utility model;
Fig. 3 is schematic diagram of the present utility model.
Embodiment
The technological means realized for making the utility model, creation characteristic, reaching object and effect is easy to understand, below in conjunction with embodiment, setting forth the utility model further.
With reference to Fig. 1-3, this embodiment is by the following technical solutions: a kind of passive pressure sensing head based on HTCC technology, comprise reading circuit apotheca 1, high temperature resistant heat insulation layer 2, passive pressure-sensitive microstructure 3 and capping 4, the front end of high temperature resistant heat insulation layer 2 is provided with passive pressure-sensitive microstructure 3, the rear end of high temperature resistant heat insulation layer 2 is provided with reading circuit apotheca 1, the antenna receive circuit that can detect resonance frequency change in passive pressure-sensitive microstructure 3 is provided with in reading circuit apotheca 1, the front end of passive pressure-sensitive microstructure 3 is provided with capping 4, reading circuit apotheca 1, high temperature resistant heat insulation layer 2, passive pressure-sensitive microstructure 3 is integrated in a sensing head, can miniaturized pressure Sensitive Apparatus, reduce it to take up room and be convenient to expand its use occasion.
It should be noted that, the pressure-sensitive microstructure that described passive pressure-sensitive microstructure 3 adopts alumina high temperature common burning porcelain casting belt to build in conjunction with thick film printing technique, the passive electric circuit of passive pressure-sensitive microstructure 3 adopts thick film screen printing platinum slurry to complete, because aluminium oxide ceramics belongs to High Temperature Co Fired Ceramic, its sintering temperature is up to 1500 DEG C, the silver paste of general use cannot burn altogether with it, therefore resistant to elevated temperatures inert metal slurry must be used, comprise tungsten, manganese, platinum, wherein tungsten, the resistance value of manganese is too large, the quality factor q of circuit will be caused to reduce, be unfavorable for the lifting of LC passive electric circuit and reading circuit wireless coupling performance, by contrast, platinum resistance is less and high-temperature stability is good, maximum operation (service) temperature is higher than 1500 DEG C, by by aluminium oxide casting belt and platinum slurry co-sintering, multiple buried structure can be realized, because platinum has higher fusing point and inertia, LC resonant circuit at high temperature still can not be oxidized and normally.
In addition, described high temperature resistant heat insulation layer 2 adopts high-temperature resistant aluminium oxide ceramic thermal barrier layer, its coefficient of heat conductivity is 7.8W/mK, the thickness of high temperature resistant heat insulation layer 2 remains on maximum 2 cm, can ensure that the high-temperature gas to front end flows into effectively stops, electromagnetic wave signal can be allowed again can be received by the reading circuit antenna of rear end by thermofin, ceramic powder moulding process is utilized to prepare, the outer casing of presser sensor head is obtained, for the passive pressure-sensitive microstructure 3 of fixing front end and the reading circuit apotheca 1 of rear end by molding releasing process.
The passive pressure-sensitive microstructure 3 of this embodiment is provided with seven layers from top to bottom, ground floor is pressure sensitive layer, the centre of pressure sensitive layer is stress and deformation region, and the below of pressure sensitive layer is printed with step 301 on electric capacity, and on electric capacity, step 301 is connected with toroidal inductor 302; The second layer lower surface of passive pressure-sensitive microstructure 3 is printed with toroidal inductor 302, and it is interconnected to realize with ground floor telefault 302 by through hole slurry; The third layer upper surface of passive pressure-sensitive microstructure 3 is printed with step 303 under electric capacity, lower surface printed inductor 302, and bury cavity structure in the second layer and the punching of third layer cast sheet centre are formed with, cavity structure communicates with the vacuum orifice 304 on ground floor surface; The 4th layer of passive pressure-sensitive microstructure 3 is all printed with telefault 302 to layer 6 lower surface, and the 4th layer and third layer, telefault 302 between layer 6 and layer 5 are all interconnected by through hole slurry; The 4th layer of described passive pressure-sensitive microstructure 3 forms concave structure to layer 7 by punching, is provided with the high temperature resistant SmCo magnetive cord 305 strengthening electromagnetic field directivity in concave structure; Passive pressure-sensitive microstructure 3 have employed multilayer interconnect inductance coil 302 and high temperature resistant SmCo magnetive cord 305, greatly enhance the inductance value of telefault 302, and the electromagnetic wave making telefault 302 launch has more directivity, the stop that finally can overcome thermofin accept by the antenna in rear end reading circuit apotheca 1.
Step 301 on electric capacity, telefault 302 two ends that under electric capacity, step 303 is interconnected with multilayer are connected, step 301 on electric capacity, telefault 302, under electric capacity, step 303 forms LC resonant circuit, when pressure-sensitive head is subject to extraneous uniform pressure, because ambient pressure is higher than inside, ceramic pressure-sensitive film generation elastic deformation will be forced, cause step 301 on electric capacity, under electric capacity, step 303 spacing reduces, capacitance becomes large, according to the mathematical relation of resonance frequency f and inductance L and electric capacity C, electric capacity increases and will the resonance frequency of LC resonant circuit be caused to reduce, in conjunction with High Temperature Co Fired Ceramic aluminium oxide casting belt and conduction platinum slurry, achieve the series LC resonant circuit of multi-layer helical shape inductance and variable capacitance, the electromagnetic field that the screw type telefault of multilayer is formed has stronger directivity, in addition high temperature resistant SmCo magnetive cord 305 is inserted, the directivity of electromagnetic field can be made more concentrated.
Preparation technology's flow process of passive pressure-sensitive microstructure 3: (1), to the section of aluminium oxide casting belt, is cut into 2 × 2cm
2square; (2) according to above-mentioned designing requirement, respectively punching technology is carried out to seven layers of cast sheet; (3) in second layer cavity, insert sacrifice layer casting belt on keeping, put the smooth of pressure sensitive film as stilt, avoid occurring subsiding when lamination; (4) at 1500 DEG C, in air atmosphere, high temperature co-firing is carried out to aluminium oxide ceramics and platinum.
This embodiment utilizes multi-layer stacks technology and the thick film screening techniques of High Temperature Co Fired Ceramic, prepare cavity structure, at the inner LC resonant circuit realized containing variable capacitance of pottery, by the flexible ceramic film on cavity upper strata, realize the elastic deformation meeting classical mechanics rule to even outer force-responsive, the change of external force size is converted into the electrical quantity change of passive LC resonance circuit the most at last, outwards propagate in the form of an electromagnetic wave, in the effective coverage of electromagnetic wave attenuation, caught by neighbouring receiving antenna, realization draws tested pressure to the collection of electromagnetic signal and reading rear end by the transition function between frequency and pressure, its principle of work is: after being placed in the passive pressure sensing head pressurized of high-temperature low-pressure environment, the capacitance including variable capacitance is caused to change, the resonance frequency of embedded LC resonant circuit is finally made to offset, after heat being shielded by the propagation of electromagnetic field and coupling and high temperature insulating layer, sensing head rear portion containing antenna receive circuit detect pressure-sensitive microstructure resonance frequency change after, ambient exterior atmospheric pressure numerical value is obtained through data processing, finally store so that in the future statistical conversion.
This embodiment solves the technical matters that pressure sensitive structural high temperature moves back performance-based and electrical lead loose contact; can at the temperature more than 800 DEG C; change to external world in an atmospheric pressure can accomplish Sensitive Detection; there is provided safeguard protection to the data reading circuit of rear end simultaneously; from the impact of temperature; good stability, highly sensitive, there is wide market application foreground.
More than show and describe ultimate principle of the present utility model and principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and instructions just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (6)
1. the passive pressure sensing head based on HTCC technology, it is characterized in that, comprise reading circuit apotheca (1), high temperature resistant heat insulation layer (2), passive pressure-sensitive microstructure (3) and capping (4), the front end of high temperature resistant heat insulation layer (2) is provided with passive pressure-sensitive microstructure (3), the rear end of high temperature resistant heat insulation layer (2) is provided with reading circuit apotheca (1), the antenna receive circuit that can detect resonance frequency change in passive pressure-sensitive microstructure (3) is provided with in reading circuit apotheca (1), the front end of passive pressure-sensitive microstructure (3) is provided with capping (4), reading circuit apotheca (1), high temperature resistant heat insulation layer (2), passive pressure-sensitive microstructure (3) is integrated in a sensing head, passive pressure-sensitive microstructure (3) adopts the pressure-sensitive microstructure of High Temperature Co Fired Ceramic aluminium oxide casting belt and conduction platinum slurry.
2. a kind of passive pressure sensing head based on HTCC technology according to claim 1, it is characterized in that, described passive pressure-sensitive microstructure (3) is provided with seven layers from top to bottom, ground floor is pressure sensitive layer, the centre of pressure sensitive layer is stress and deformation region, the below of pressure sensitive layer is printed with step on electric capacity (301), and on electric capacity, step (301) is connected with toroidal inductor (302); The second layer lower surface of passive pressure-sensitive microstructure (3) is printed with toroidal inductor (302), interconnected by through hole slurry between the toroidal inductor (302) of the second layer and ground floor; The third layer upper surface of passive pressure-sensitive microstructure (3) is printed with step (303) under electric capacity, lower surface printed inductor (302), bury cavity structure in the second layer and the punching of third layer cast sheet centre are formed with, cavity structure communicates with the vacuum orifice (304) on ground floor surface; The 4th layer of passive pressure-sensitive microstructure (3) is all printed with telefault (302) to layer 6 lower surface, and the 4th layer and third layer, telefault (302) between layer 6 and layer 5 are all interconnected by through hole slurry.
3. a kind of passive pressure sensing head based on HTCC technology according to claim 2, it is characterized in that, on described electric capacity, under step (301), electric capacity, the two ends of the telefault (302) that step (303) is interconnected with multilayer are connected, step (303) composition LC resonant circuit under step (301), telefault (302), electric capacity on electric capacity.
4. a kind of passive pressure sensing head based on HTCC technology according to claim 2, it is characterized in that, the 4th layer of described passive pressure-sensitive microstructure (3) forms concave structure to layer 7 by punching, is provided with the high temperature resistant SmCo magnetive cord (305) strengthening electromagnetic field directivity in concave structure.
5. a kind of passive pressure sensing head based on HTCC technology according to claim 1, is characterized in that, described high temperature resistant heat insulation layer (2) adopts aluminium oxide ceramics thermofin.
6. a kind of passive pressure sensing head based on HTCC technology according to claim 1, is characterized in that, the thickness of described high temperature resistant heat insulation layer (2) is 2cm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043605A (en) * | 2015-07-06 | 2015-11-11 | 中北大学 | Passive voltage sensing head based on HTCC technology |
| CN105203251A (en) * | 2015-10-16 | 2015-12-30 | 武汉工程大学 | Pressure sensing chip and processing method thereof |
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
-
2015
- 2015-07-06 CN CN201520476152.9U patent/CN204705422U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105043605A (en) * | 2015-07-06 | 2015-11-11 | 中北大学 | Passive voltage sensing head based on HTCC technology |
| CN105043605B (en) * | 2015-07-06 | 2018-07-17 | 中北大学 | A kind of passive pressure sensing head based on HTCC technologies |
| CN105203251A (en) * | 2015-10-16 | 2015-12-30 | 武汉工程大学 | Pressure sensing chip and processing method thereof |
| CN105203251B (en) * | 2015-10-16 | 2018-06-08 | 武汉工程大学 | Pressure sensing chip and its processing method |
| CN107144378A (en) * | 2017-06-07 | 2017-09-08 | 深圳信息职业技术学院 | Mems pressure sensor |
| CN107144378B (en) * | 2017-06-07 | 2023-05-05 | 深圳信息职业技术学院 | MEMS pressure sensor |
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