CN106443068A - Torsional differential quartz resonant acceleration sensor chip - Google Patents
Torsional differential quartz resonant acceleration sensor chip Download PDFInfo
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- CN106443068A CN106443068A CN201610946670.1A CN201610946670A CN106443068A CN 106443068 A CN106443068 A CN 106443068A CN 201610946670 A CN201610946670 A CN 201610946670A CN 106443068 A CN106443068 A CN 106443068A
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- fork
- quartz tuning
- support frame
- tuning
- quartz
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
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Abstract
A torsional differential quartz resonant acceleration sensor chip comprises a peripheral silicon-based support frame which is connected with a mass block through a support spindle, a movement gap is provided between the mass block and the support frame, the mass block is provided with a pair of full-through empty slots close to the axis, resonant beams of a pair of double-end quartz tuning forks are arranged in the symmetric empty slots, one ends of the double-end quartz tuning forks are fixed to the silicon-based support frame, and the other ends of the double-end quartz tuning forks are fixed to the mass block; when acceleration acts on the mass block, the mass block may generate certain torsion under supporting of the support spindle, the quartz tuning forks deform, resonant frequency of the quartz tuning forks is changed due to the deformation, such change is converted by a frequency detection circuit into a frequency signal to output, acceleration-frequency signal conversion is achieved for the sensor chip, digital measurement for acceleration is achieved; the torsional differential quartz resonant acceleration sensor chip has the advantages of small size, low weight, good digital signal output, high resolution, good anti-jamming performance and the like.
Description
Technical field
The invention belongs to resonant mode acceleration transducer technical field, and in particular to a kind of differential type quartz resonance that reverses adds
Velocity sensor chip.
Background technology
The sensor using MEMS processing conventional at present is broadly divided into pressure resistance type and condenser type.Pressure resistance type is sensed
Device is by the resistance with piezoresistive effect and the beam-mass with a fixed structure come induction acceleration, and capacitance acceleration is passed
Sensor is then by changing the area of capacitor plate or distance is come induction acceleration.The conventional acceleration transducer of both the above
Output is all analogue signal, post processing circuitry complexity, and sensitivity is low, there is analog digital conversion error, and can not directly with height
The digital display circuit of precision combines.Compared to pressure resistance type and capacitive acceleration transducer, resonant mode acceleration transducer its
Output signal is frequency signal, have the advantages that high precision and strong antijamming capability.Also have at present a small amount of resonant silicon micro- plus
Velocity sensor, although sensors with auxiliary electrode output is digital signal, and due to being processed using silicon, vibration frequency is low, sensitivity
Difference, quality factor q value are low.A part of accelerometer also uses differential structure, due to the complexity of structure, causes to process work
Skill is loaded down with trivial details, and difficulty of processing is big.In a word, existing accelerometer generally existing simulation output, sensitivity is low, the asking of processed complex
Topic.
Content of the invention
In order to overcome the shortcoming of above-mentioned existing accelerometer, it is an object of the invention to provide a kind of reverse differential type quartz
Resonant acceleration sensor chip, small volume excellent have the advantages that digital signal output, high resolution and interference free performance,
Lightweight.
To achieve these goals, the technical solution used in the present invention is:
A kind of torsion differential type quartz resonance acceleration transducer chip, including the silicon substrate support frame 1 of periphery, silicon substrate is propped up
The mass 2 internal with which of support frame frame 1 is connected by supporting rotating shaft 5, near axis position on mass 2, has a pair
Completely through the first dead slot 4 and the second dead slot 8, the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are arranged on first
In dead slot 4 and the second dead slot 8, one end of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 is fixed on silicon substrate carriage
In the first mounting groove 6 on frame 1, the other end of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 is fixed on mass
In the second mounting groove 7 on 2, the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are symmetrically installed with regard to support rotating shaft 5,
The 10 surface surrounding of resonance beam of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 is provided with electrode, can after energising
Vibrate according to predetermined modality.
The first described dead slot 4 and the second dead slot 8 are with regard to supporting rotating shaft 5 symmetrical, and width is more than 500 microns.
There is the movement clearance of 200-300 micron between described mass 2 and silicon substrate support frame 1.
Described 5 length of support rotating shaft is 200-300 micron, and width is 180-200 micron.
The depth of the first described mounting groove 6 and the second mounting groove 7 is 250-300 micron, near axis.
Described support rotating shaft 5 and the axis of mass 2 and silicon substrate support frame 1 overlaps.
The first described both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are in the cornerwise of silicon substrate support frame 1
Side, parallel side-by-side is installed, and the first both-end quartz tuning-fork 3 is identical with the mode of oscillation of the second both-end quartz tuning-fork 9.
The mode of oscillation phase of two resonance beam 10 of the first described both-end quartz tuning-fork 3 or the second both-end quartz tuning-fork 9
Instead.
Described silicon substrate support frame 1, mass 2, support rotating shaft 5, the first mounting groove 6, the second mounting groove 7, first empty
Groove 4 and the second dead slot 8 are obtained by bulk silicon technological processing.
Beneficial effects of the present invention are:
There is inverse piezoelectric effect in the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9, when electrode two sides has electric charge to hand over
For during change, the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 arise that vibration, and its eigentone is by double
The impact of end quartz tuning-fork planform.When acceleration effect is in chip, the mass 2 of the support of rotating shaft 5 is supported in inertia force
Effect is lower to reverse small angle, and the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 occur faint deformation, this
Deformation causes this to one tension of quartz tuning-fork, and one pressurized, constitutes differential form.Stress can cause the internal stress of quartz tuning-fork
Change, the change of stress causes resonant frequency to change, and the size of change is directly proportional to acceleration, by the first both-end quartz sound
The resonant frequency of fork 3 and the second both-end quartz tuning-fork 9 is subtracted each other, and obtains differential frequency changing value, is become by detecting differential frequency
Change value can just obtain the size of acceleration.Differential version can reduce the input signal in non-sensitive direction to output knot
The impact of fruit, improves the capacity of resisting disturbance of accelerometer.The present invention is using both-end quartz tuning-fork as sensitive material, substrate support
For silicon, with small volume, weight is little, digital signal output, high resolution and interference free performance excellent the advantages of.
Description of the drawings
Fig. 1 is the silicon substrate structure schematic diagram of the present invention.
Fig. 2 is sensor of the invention structural representation.
Fig. 3 is the Section A-A schematic diagram of Fig. 2.
Fig. 4 is the mode of oscillation of the first both-end quartz tuning-fork 3.
Specific embodiment
Below in conjunction with accompanying drawing, the structure & working mechanism of the present invention is described in detail.
Referring to Fig. 1 and Fig. 2, a kind of torsion differential type quartz resonance acceleration transducer chip, the silicon substrate including periphery is propped up
Support frame frame 1, the mass 2 internal with which of silicon substrate support frame 1 is connected by supporting rotating shaft 5, near axis on mass 2
Position, have a pair completely through the first dead slot 4 and the second dead slot 8, the first both-end quartz tuning-fork 3 and the second both-end quartz sound
Fork 9 is in the first dead slot 4 and the second dead slot 8, and one end of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 leads to
Cross in the first mounting groove 6 that organic gel is fixed in silicon substrate support frame 1, the first both-end quartz tuning-fork 3, the second both-end quartz sound
The other end of fork 9 is fixed in the second mounting groove 7 on mass 2, the first both-end quartz tuning-fork 3, the second both-end quartz tuning-fork 9
With regard to supporting rotating shaft 5 to be symmetrically installed, the resonance beam surface surrounding of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 sets
Electrode is equipped with, can be vibrated according to predetermined modality after energising, sensor chip senses the defeated of acceleration by mass 2
Enter, then by the first both-end quartz tuning-fork 3 and the differential change frequency of the second both-end quartz tuning-fork 9, by frequency detection circuit
Acceleration is converted to the signal of telecommunication, completes the sensing to acceleration and measurement.
The first described dead slot 4 and the second dead slot 8 are with regard to supporting rotating shaft 5 symmetrical, and width is more than 500 microns.
Have 200 microns of movement clearance between described mass 2 and silicon substrate support frame 1, when have acceleration effect in
During chip, according to Newton's second law, mass 2 will produce certain torsion, the first both-end quartz in the presence of inertia force
There is faint deformation in tuning fork 3 and the second both-end quartz tuning-fork 9, this deformation causes this to one tension of quartz tuning-fork, one
Pressurized, constitute differential form.
Described 5 length of support rotating shaft is 200-300 microns, and width is 200 microns.
Referring to Fig. 3, the depth ratio silicon substrate support frame 1 of the first mounting groove 6 and the second mounting groove 7 and the plane of mass 2
Deep 250-300 micron, near axis, so can ensure that the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are in
The centre position of silicon wafer thickness, makes the frequency of vibration of the first both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 more objectively anti-
Answer the size of acceleration.
Described support rotating shaft 5 and the axis of mass 2 and silicon substrate support frame 1 overlaps.
The first described both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are in the cornerwise of silicon substrate support frame 1
Side, parallel side-by-side is installed, and the first both-end quartz tuning-fork 3 is identical with the mode of oscillation of the second both-end quartz tuning-fork 9.
Referring to Fig. 4, the shaking of two resonance beam 10 of the first described both-end quartz tuning-fork 3 or the second both-end quartz tuning-fork 9
Dynamic model state will not produce additional effect to mass 2 conversely, internal force can be cancelled out each other in fixing end.
Described silicon substrate support frame 1, mass 2, support rotating shaft 5, the first mounting groove 6, the second mounting groove 7, first empty
Groove 4 and the second dead slot 8 are obtained by bulk silicon technological processing.The operation principle of the present invention is:Acceleration effect is in sensor chip
When, mass 2 as the sensitive-mass block of sensor acceleration, according to Newton's second law, when acceleration effect is in internal matter
During gauge block 2, due to the effect of inertia force, Internal moving mass 2 can produce certain torsion under supporting rotating shaft 5 to support, and then make
First both-end quartz tuning-fork 3 and the second both-end quartz tuning-fork 9 are deformed upon, and the deformation causes the resonant frequency of quartzy beam to become
Change, this change is converted into frequency signal output by frequency detection circuit, so as to realize the acceleration-frequency of sensor chip
Signal is changed, and completes the digitized measurement to acceleration.
Claims (9)
1. one kind reverses differential type quartz resonance acceleration transducer chip, and including the silicon substrate support frame (1) of periphery, silicon substrate is propped up
Support frame frame (1) mass (2) internal with which is connected by supporting rotating shaft (5), it is characterised in that:Upper close in mass (2)
Axis position, have a pair completely through the first dead slot (4) and the second dead slot (8), the first both-end quartz tuning-fork (3) and
Two both-end quartz tuning-forks (9) are interior installed in the first dead slot (4) and the second dead slot (8), the first both-end quartz tuning-fork (3) and second pair
The one end at end quartz tuning-fork (9) is fixed on the first mounting groove (6) in silicon substrate support frame (1) Nei, the first both-end quartz tuning-fork
(3) other end of and the second both-end quartz tuning-fork (9) is fixed on the second mounting groove (7) on mass (2) Nei, the first both-end stone
English tuning fork (3) and the second both-end quartz tuning-fork (9) with regard to supporting rotating shaft (5) to be symmetrically installed, the first both-end quartz tuning-fork (3) and the
The resonance beam surface surrounding of two both-end quartz tuning-forks (9) is provided with electrode, can vibrate according to predetermined modality after energising.
2. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
The first dead slot (4) that states and the second dead slot (8) are symmetrical with regard to supporting rotating shaft (5), and width is more than 500 microns.
3. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
There is the movement clearance of 200-300 micron between the mass (2) that states and silicon substrate support frame (1).
4. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
Support rotating shaft (5) length that states is 200-300 micron, and width is 180-200 micron.
5. a kind of clock according to claim 1 reverses dynamic formula quartz resonance acceleration transducer chip, it is characterised in that:Institute
The first mounting groove (6) that states and the depth of the second mounting groove (7) are 250-300 micron, near axis.
6. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
The support rotating shaft (5) that states and the axis of mass (2) and silicon substrate support frame (1) overlap.
7. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
The the first both-end quartz tuning-fork (3) that states and the second both-end quartz tuning-fork (9) are in cornerwise the one of silicon substrate support frame (1)
Side, parallel side-by-side is installed, and the first both-end quartz tuning-fork (3) is identical with the mode of oscillation of the second both-end quartz tuning-fork (9).
8. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
The the first both-end quartz tuning-fork (3) that states or the mode of oscillation of two resonance beam (10) of the second both-end quartz tuning-fork (9) are contrary.
9. one kind according to claim 1 reverses differential type quartz resonance acceleration transducer chip, it is characterised in that:Institute
The silicon substrate support frame (1) stated, mass (2), support rotating shaft (5), the first mounting groove (6), the second mounting groove (7), first empty
Groove (4) and the second dead slot (8) are obtained by bulk silicon technological processing.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107328954A (en) * | 2017-07-25 | 2017-11-07 | 西安交通大学 | A kind of multi-stage stairs high overload resonance type accelerometer chip |
CN107686091A (en) * | 2017-07-25 | 2018-02-13 | 西安交通大学 | A kind of curve high overload resonance type micro accelerometer chip |
CN113433345A (en) * | 2021-05-13 | 2021-09-24 | 西安航天精密机电研究所 | Integrated pendulum quartz resonant accelerometer structure and assembly method thereof |
CN115342793A (en) * | 2022-07-18 | 2022-11-15 | 西安交通大学 | Anti-interference quartz vibrating gyroscope with double ends and tuning fork |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939935A (en) * | 1988-02-22 | 1990-07-10 | Societe D'applications Generales D'electricite Et De Mecanique | Pendular non-servoed tuning beam accelerometer |
JP2008304409A (en) * | 2007-06-11 | 2008-12-18 | Epson Toyocom Corp | Acceleration detecting unit and acceleration sensor |
CN102778583A (en) * | 2012-07-12 | 2012-11-14 | 西安交通大学 | Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure |
CN103063875A (en) * | 2012-12-25 | 2013-04-24 | 西安交通大学 | Silicon substrate differential motion quartz acceleration sensor |
CN103217553A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院电子学研究所 | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode |
CN104374953A (en) * | 2014-11-25 | 2015-02-25 | 东南大学 | Split type differential silicon micro resonant accelerometer |
CN105911309A (en) * | 2016-06-24 | 2016-08-31 | 东南大学 | Single anchor supporting-type double axis silicon micro resonant accelerometer |
-
2016
- 2016-10-26 CN CN201610946670.1A patent/CN106443068B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939935A (en) * | 1988-02-22 | 1990-07-10 | Societe D'applications Generales D'electricite Et De Mecanique | Pendular non-servoed tuning beam accelerometer |
JP2008304409A (en) * | 2007-06-11 | 2008-12-18 | Epson Toyocom Corp | Acceleration detecting unit and acceleration sensor |
CN103217553A (en) * | 2012-01-19 | 2013-07-24 | 中国科学院电子学研究所 | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode |
CN102778583A (en) * | 2012-07-12 | 2012-11-14 | 西安交通大学 | Silicon substrate-based quartz resonance acceleration sensor chip with four-beam structure |
CN103063875A (en) * | 2012-12-25 | 2013-04-24 | 西安交通大学 | Silicon substrate differential motion quartz acceleration sensor |
CN104374953A (en) * | 2014-11-25 | 2015-02-25 | 东南大学 | Split type differential silicon micro resonant accelerometer |
CN105911309A (en) * | 2016-06-24 | 2016-08-31 | 东南大学 | Single anchor supporting-type double axis silicon micro resonant accelerometer |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107328954A (en) * | 2017-07-25 | 2017-11-07 | 西安交通大学 | A kind of multi-stage stairs high overload resonance type accelerometer chip |
CN107686091A (en) * | 2017-07-25 | 2018-02-13 | 西安交通大学 | A kind of curve high overload resonance type micro accelerometer chip |
CN113433345A (en) * | 2021-05-13 | 2021-09-24 | 西安航天精密机电研究所 | Integrated pendulum quartz resonant accelerometer structure and assembly method thereof |
CN115342793A (en) * | 2022-07-18 | 2022-11-15 | 西安交通大学 | Anti-interference quartz vibrating gyroscope with double ends and tuning fork |
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Effective date of registration: 20210201 Address after: 710119 No.19 Chuanghui Road, Chang'an District, Xi'an City, Shaanxi Province Patentee after: Shaanxi Lin Tak inertia Electric Co.,Ltd. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |