CN106443068A - Torsional differential quartz resonant acceleration sensor chip - Google Patents
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- 239000010453 quartz Substances 0.000 title claims abstract description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 230000001133 acceleration Effects 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000012545 processing Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 7
- 230000010355 oscillation Effects 0.000 claims 2
- 239000004575 stone Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000009434 installation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
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- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
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Abstract
一种扭转差动式石英谐振加速度传感器芯片，包括外围的硅基支撑框架,硅基支撑框架与质量块通过支撑转轴连接，质量块与支撑外框架之间有运动间隙，在质量块上靠近中轴线部位，开有一对完全贯通的空槽，一对双端石英音叉的谐振梁分别放置于对称的空槽内，双端石英音叉一端固定在硅基支撑框架上，另一端固定在质量块上，当加速度作用于质量块时，质量块在支撑转轴支撑下会产生一定的扭转，石英音叉发生形变，该形变导致石英音叉的谐振频率发生变化，这一变化通过频率检测电路转化为频率信号输出，从而实现传感器芯片的加速度‑频率信号转换，完成对加速度的数字化测量，本发明具有体积小，重量小，数字信号输出、分辨率高和抗干扰性能优良等优点。
A torsional differential quartz resonant acceleration sensor chip, including a peripheral silicon-based support frame, the silicon-based support frame and the mass block are connected through a support shaft, there is a movement gap between the mass block and the support outer frame, and the mass block is close to the center There is a pair of completely through hollow slots on the axis, and the resonant beams of a pair of double-ended quartz tuning forks are respectively placed in the symmetrical hollow slots. One end of the double-ended quartz tuning fork is fixed on the silicon-based support frame, and the other end is fixed on the mass block. , when the acceleration acts on the mass block, the mass block will produce a certain twist under the support of the supporting shaft, and the quartz tuning fork will be deformed. This deformation will cause the resonant frequency of the quartz tuning fork to change, and this change will be converted into a frequency signal output by the frequency detection circuit , so as to realize the acceleration-frequency signal conversion of the sensor chip and complete the digital measurement of the acceleration. The present invention has the advantages of small size, small weight, digital signal output, high resolution and excellent anti-interference performance.
Description
技术领域technical field
本发明属于谐振式加速度传感器技术领域，具体涉及一种扭转差动式石英谐振加速度传感器芯片。The invention belongs to the technical field of resonant acceleration sensors, in particular to a torsional differential quartz resonant acceleration sensor chip.
背景技术Background technique
目前常用的采用微机电系统加工的传感器主要分为压阻式和电容式。压阻式传感器通过具有压阻效应的电阻和具有一定结构的梁-质量块来感应加速度，电容式加速度传感器则是通过改变电容极板的面积或者距离来感应加速度。以上两种常用的加速度传感器输出的均是模拟信号，后处理电路复杂，灵敏度低，存在模数转换误差，而且不能直接与高精度的数字系统相结合。相比于压阻式和电容式的加速度传感器，谐振式加速度传感器其输出信号是频率信号，具有精度高和抗干扰能力强的优点。目前也有少量的谐振式硅微加速度传感器，虽然此类传感器输出的是数字信号，由于采用硅进行加工，振频率低、灵敏度差、品质因数Q值低。一部分加速度计也采用了差动的结构，由于结构的复杂性，导致加工工艺繁琐，加工难度大。总之，现有的加速度计普遍存在模拟输出，灵敏度低，加工复杂的问题。At present, the commonly used sensors processed by MEMS are mainly divided into piezoresistive and capacitive. The piezoresistive sensor senses acceleration through a resistor with piezoresistive effect and a beam-mass block with a certain structure, while the capacitive acceleration sensor senses acceleration by changing the area or distance of the capacitive plate. The above two commonly used acceleration sensors output analog signals, the post-processing circuit is complex, the sensitivity is low, there is an analog-to-digital conversion error, and it cannot be directly combined with a high-precision digital system. Compared with piezoresistive and capacitive acceleration sensors, the output signal of the resonant acceleration sensor is a frequency signal, which has the advantages of high precision and strong anti-interference ability. At present, there are also a small number of resonant silicon micro-acceleration sensors. Although the output of this type of sensor is a digital signal, due to the use of silicon for processing, the vibration frequency is low, the sensitivity is poor, and the quality factor Q value is low. Some accelerometers also adopt a differential structure. Due to the complexity of the structure, the processing technology is cumbersome and difficult to process. In short, the existing accelerometers generally have the problems of analog output, low sensitivity and complex processing.
发明内容Contents of the invention
为了克服上述现有加速度计的缺点，本发明的目的在于提供一种扭转差动式石英谐振加速度传感器芯片，具有数字信号输出、分辨率高和抗干扰性能优良的优点，体积小，重量轻。In order to overcome the above-mentioned shortcomings of existing accelerometers, the object of the present invention is to provide a torsional differential quartz resonant acceleration sensor chip, which has the advantages of digital signal output, high resolution and excellent anti-interference performance, small size and light weight.
为了实现上述目的，本发明采用的技术方案为：In order to achieve the above object, the technical scheme adopted in the present invention is:
一种扭转差动式石英谐振加速度传感器芯片，包括外围的硅基支撑框架1,硅基支撑框架1与其内部的质量块2通过支撑转轴5连接，在质量块2上靠近中轴线部位，开有一对完全贯通的第一空槽4和第二空槽8，第一双端石英音叉3和第二双端石英音叉9安装在第一空槽4和第二空槽8内，第一双端石英音叉3和第二双端石英音叉9的一端固定在硅基支撑框架1上的第一安装槽6内，第一双端石英音叉3和第二双端石英音叉9的另一端固定在质量块2上的第二安装槽7内，第一双端石英音叉3和第二双端石英音叉9关于支撑转轴5对称安装，第一双端石英音叉3和第二双端石英音叉9的谐振梁10表面四周设置有电极，通电之后能够按照预定模态振动。A torsional differential quartz resonant acceleration sensor chip, including a peripheral silicon-based support frame 1, the silicon-based support frame 1 is connected to the internal mass block 2 through a support shaft 5, and a For the completely through first cavity 4 and the second cavity 8, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are installed in the first cavity 4 and the second cavity 8, and the first double-ended One end of the quartz tuning fork 3 and the second double-ended quartz tuning fork 9 is fixed in the first mounting groove 6 on the silicon-based support frame 1, and the other end of the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 is fixed on the mass In the second installation groove 7 on the block 2, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are installed symmetrically about the supporting shaft 5, and the resonance of the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 Electrodes are arranged around the surface of the beam 10, and can vibrate according to a predetermined mode after electrification.
所述的第一空槽4和第二空槽8关于支撑转轴5对称，宽度为500微米以上。The first cavity 4 and the second cavity 8 are symmetrical about the supporting shaft 5 and have a width of more than 500 microns.
所述的质量块2与硅基支撑框架1之间有200-300微米的运动间隙。There is a movement gap of 200-300 microns between the mass block 2 and the silicon-based support frame 1 .
所述的支撑转轴5长度为200-300微米，宽度为180-200微米。The supporting shaft 5 has a length of 200-300 microns and a width of 180-200 microns.
所述的第一安装槽6和第二安装槽7的深度为250-300微米，靠近中轴线。The first installation groove 6 and the second installation groove 7 have a depth of 250-300 microns and are close to the central axis.
所述的支撑转轴5和质量块2以及硅基支撑框架1的中轴线重合。The supporting shaft 5 coincides with the central axis of the mass block 2 and the silicon-based supporting frame 1 .
所述的第一双端石英音叉3和第二双端石英音叉9处于硅基支撑框架1的对角线的一侧，平行并列安装，第一双端石英音叉3和第二双端石英音叉9的振动模态相同。The first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are located on one side of the diagonal line of the silicon-based support frame 1 and are installed in parallel. The first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 have the same vibration mode.
所述的第一双端石英音叉3或第二双端石英音叉9的两根谐振梁10的振动模态相反。The vibration modes of the two resonant beams 10 of the first double-ended quartz tuning fork 3 or the second double-ended quartz tuning fork 9 are opposite.
所述的硅基支撑框架1、质量块2、支撑转轴5、第一安装槽6、第二安装槽7、第一空槽4和第二空槽8通过体硅工艺加工得到。The silicon-based supporting frame 1 , mass block 2 , supporting shaft 5 , first mounting groove 6 , second mounting groove 7 , first hollow groove 4 and second hollow groove 8 are processed by bulk silicon technology.
本发明的有益效果为：The beneficial effects of the present invention are:
第一双端石英音叉3和第二双端石英音叉9存在逆压电效应，当电极两面有电荷交替变化时，第一双端石英音叉3和第二双端石英音叉9就会出现振动，其固有振动频率受双端石英音叉结构形状的影响。当加速度作用于芯片时，支撑转轴5支撑的质量块2在惯性力作用下扭转微小的角度,第一双端石英音叉3和第二双端石英音叉9发生微弱的变形，这种变形导致这对石英音叉一个受拉，一个受压，构成差动形式。受力会导致石英音叉的内应力变化，应力的变化致使谐振频率发生改变，改变的大小与加速度成正比，将第一双端石英音叉3和第二双端石英音叉9的谐振频率相减，得到差动频率变化值，通过检测差动的频率变化值就能够得到加速度的大小。差动的结构形式能够减小非敏感方向的输入信号对输出结果的影响，提高加速度计的抗干扰能力。本发明采用双端石英音叉作为敏感材料，基底支撑为硅，具有体积小，重量小，数字信号输出、分辨率高和抗干扰性能优良等优点。There is an inverse piezoelectric effect in the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9. When the charges on both sides of the electrodes change alternately, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 will vibrate. Its natural frequency of vibration is influenced by the shape of the double-ended quartz tuning fork structure. When the acceleration acts on the chip, the mass block 2 supported by the supporting shaft 5 twists a small angle under the action of inertial force, and the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are slightly deformed, and this deformation causes this One of the quartz tuning forks is in tension and the other is in compression, forming a differential form. The force will cause the internal stress of the quartz tuning fork to change, and the change of the stress will cause the resonance frequency to change. The magnitude of the change is proportional to the acceleration. The resonance frequency of the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are subtracted, The differential frequency change value is obtained, and the magnitude of the acceleration can be obtained by detecting the differential frequency change value. The differential structure can reduce the influence of the input signal in the non-sensitive direction on the output result, and improve the anti-interference ability of the accelerometer. The invention adopts a double-ended quartz tuning fork as the sensitive material, and the base support is silicon, and has the advantages of small volume, light weight, digital signal output, high resolution and excellent anti-interference performance.
附图说明Description of drawings
图1为本发明的硅基结构示意图。FIG. 1 is a schematic diagram of the silicon-based structure of the present invention.
图2为本发明的传感器结构示意图。Fig. 2 is a schematic structural diagram of the sensor of the present invention.
图3为图2的A-A截面示意图。FIG. 3 is a schematic cross-sectional view of A-A in FIG. 2 .
图4为第一双端石英音叉3的振动模态。FIG. 4 is the vibration mode of the first double-ended quartz tuning fork 3 .
具体实施方式detailed description
以下结合附图对本发明的结构与工作原理详细说明。The structure and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.
参见图1和图2，一种扭转差动式石英谐振加速度传感器芯片，包括外围的硅基支撑框架1,硅基支撑框架1与其内部的质量块2通过支撑转轴5连接，在质量块2上靠近中轴线部位，开有一对完全贯通的第一空槽4和第二空槽8，第一双端石英音叉3和第二双端石英音叉9安装在第一空槽4和第二空槽8内，第一双端石英音叉3和第二双端石英音叉9的一端通过有机胶固定在硅基支撑框架1上的第一安装槽6内，第一双端石英音叉3、第二双端石英音叉9的另一端固定在质量块2上的第二安装槽7内，第一双端石英音叉3、第二双端石英音叉9关于支撑转轴5对称安装，第一双端石英音叉3和第二双端石英音叉9的谐振梁表面四周设置有电极，通电之后能够按照预定模态振动，传感器芯片通过质量块2感应到加速度的输入，然后通过第一双端石英音叉3和第二双端石英音叉9的差动变化频率，由频率检测电路把加速度转换为电信号，完成对加速度的感应与测量。Referring to Figures 1 and 2, a torsional differential quartz resonant acceleration sensor chip includes a peripheral silicon-based support frame 1, and the silicon-based support frame 1 is connected to the internal mass block 2 through a support shaft 5, on which the mass block 2 Near the central axis, there is a pair of completely through first hollow slot 4 and second hollow slot 8, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are installed in the first hollow slot 4 and the second hollow slot 8, one end of the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 is fixed in the first mounting groove 6 on the silicon-based support frame 1 by organic glue, the first double-ended quartz tuning fork 3, the second double-ended The other end of the quartz tuning fork 9 is fixed in the second installation groove 7 on the mass block 2, the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are installed symmetrically about the supporting shaft 5, and the first double-ended quartz tuning fork 3 and the resonant beam surface of the second double-ended quartz tuning fork 9 are provided with electrodes around the surface, and can vibrate according to a predetermined mode after being energized. The frequency of the differential change of the double-ended quartz tuning fork 9 is converted into an electrical signal by the frequency detection circuit to complete the induction and measurement of the acceleration.
所述的第一空槽4和第二空槽8关于支撑转轴5对称，宽度为500微米以上。The first cavity 4 and the second cavity 8 are symmetrical about the supporting shaft 5 and have a width of more than 500 microns.
所述的质量块2与硅基支撑框架1之间有200微米的运动间隙，当有加速度作用于芯片时，根据牛顿第二定律，质量块2在惯性力的作用下要产生一定的扭转，第一双端石英音叉3与第二双端石英音叉9发生微弱的变形，这种变形导致这对石英音叉一个受拉，一个受压，构成差动形式。There is a movement gap of 200 microns between the mass block 2 and the silicon-based support frame 1. When acceleration acts on the chip, according to Newton's second law, the mass block 2 will produce a certain twist under the action of inertial force. The first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are slightly deformed, and this deformation causes one of the pair of quartz tuning forks to be pulled and the other to be pressed to form a differential form.
所述的支撑转轴5长度为200-300微米左右，宽度为200微米左右。The length of the supporting rotating shaft 5 is about 200-300 microns, and the width is about 200 microns.
参见图3，第一安装槽6和第二安装槽7的深度比硅基支撑框架1和质量块2的平面深250-300微米，靠近中轴线，这样可以保证第一双端石英音叉3和第二双端石英音叉9处于硅片厚度的中间位置，使第一双端石英音叉3和第二双端石英音叉9的振动频率更客观的反应加速度的大小。Referring to Fig. 3, the depth of the first mounting groove 6 and the second mounting groove 7 is 250-300 microns darker than the plane of the silicon-based support frame 1 and the mass block 2, close to the central axis, so that the first double-ended quartz tuning fork 3 and The second double-ended quartz tuning fork 9 is located in the middle of the thickness of the silicon wafer, so that the vibration frequencies of the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 can respond more objectively to the magnitude of the acceleration.
所述的支撑转轴5和质量块2以及硅基支撑框架1的中轴线重合。The supporting shaft 5 coincides with the central axis of the mass block 2 and the silicon-based supporting frame 1 .
所述的第一双端石英音叉3和第二双端石英音叉9处于硅基支撑框架1的对角线的一侧，平行并列安装，第一双端石英音叉3和第二双端石英音叉9的振动模态相同。The first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 are located on one side of the diagonal line of the silicon-based support frame 1 and are installed in parallel. The first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 have the same vibration mode.
参见图4，所述的第一双端石英音叉3或第二双端石英音叉9的两根谐振梁10的振动模态相反，在固定端能够将内力相互抵消，不会对质量块2产生额外影响。Referring to FIG. 4 , the vibration modes of the two resonant beams 10 of the first double-ended quartz tuning fork 3 or the second double-ended quartz tuning fork 9 are opposite, and the internal forces can be canceled out at the fixed end without causing any damage to the mass block 2. extra impact.
所述的硅基支撑框架1、质量块2、支撑转轴5、第一安装槽6、第二安装槽7、第一空槽4和第二空槽8通过体硅工艺加工得到。本发明的工作原理是：加速度作用于传感器芯片时，质量块2作为传感器加速度的敏感质量块，根据牛顿第二定律，当加速度作用于内部质量块2时，由于惯性力的作用，内部质量块2在支撑转轴5支撑下会产生一定的扭转，进而使第一双端石英音叉3和第二双端石英音叉9发生形变，该形变导致石英梁的谐振频率发生变化，这一变化通过频率检测电路转化为频率信号输出，从而实现传感器芯片的加速度-频率信号转换，完成对加速度的数字化测量。The silicon-based supporting frame 1 , mass block 2 , supporting shaft 5 , first mounting groove 6 , second mounting groove 7 , first hollow groove 4 and second hollow groove 8 are processed by bulk silicon technology. The working principle of the present invention is: when the acceleration acts on the sensor chip, the mass block 2 is used as the sensitive mass mass of the sensor acceleration, according to Newton's second law, when the acceleration acts on the internal mass block 2, due to the effect of inertial force, the internal mass block 2 Under the support of the supporting shaft 5, a certain twist will occur, and then the first double-ended quartz tuning fork 3 and the second double-ended quartz tuning fork 9 will be deformed, and the deformation will cause the resonant frequency of the quartz beam to change. This change is detected by frequency The circuit is converted into a frequency signal output, thereby realizing the acceleration-frequency signal conversion of the sensor chip, and completing the digital measurement of the acceleration.
Claims (9)
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| CN201610946670.1A Active CN106443068B (en) | 2016-10-26 | 2016-10-26 | Torsional differential quartz resonance acceleration sensor chip |
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| CN107328954A (en) * | 2017-07-25 | 2017-11-07 | 西安交通大学 | A kind of multi-stage stairs high overload resonance type accelerometer chip |
| CN107686091A (en) * | 2017-07-25 | 2018-02-13 | 西安交通大学 | A kind of curve high overload resonance type micro accelerometer chip |
| CN113433345A (en) * | 2021-05-13 | 2021-09-24 | 西安航天精密机电研究所 | Integrated pendulum quartz resonant accelerometer structure and assembly method thereof |
| CN115342793A (en) * | 2022-07-18 | 2022-11-15 | 西安交通大学 | Anti-interference quartz vibrating gyroscope with double ends and tuning fork |
| CN116067672A (en) * | 2023-01-16 | 2023-05-05 | 北京晨晶电子有限公司 | crash sensor |
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