CN203011891U - Surface acoustic wave NO2 gas sensor - Google Patents
Surface acoustic wave NO2 gas sensor Download PDFInfo
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- CN203011891U CN203011891U CN 201320000310 CN201320000310U CN203011891U CN 203011891 U CN203011891 U CN 203011891U CN 201320000310 CN201320000310 CN 201320000310 CN 201320000310 U CN201320000310 U CN 201320000310U CN 203011891 U CN203011891 U CN 203011891U
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- film
- electrode
- sound absorption
- interdigital transducer
- surface wave
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Abstract
The utility model discloses a surface acoustic wave NO2 gas sensor. The surface acoustic wave NO2 gas sensor comprises a base, an input interdigital transducer, an output interdigital transducer, a sensitive film and sound absorption electrodes, and is characterized in that the base has a multilayer film structure; and the sensitive film is a double-layer sensitive film. The surface acoustic wave NO2 gas sensor provided by the utility model has the advantages of simple structure, novel design, high accuracy, high resolution, high sensitivity and simple manufacture process.
Description
Technical field
The utility model relates to sensor technical field, specifically a kind of NO based on multi-layer film structure
2Sonic surface wave gas sensors.
Background technology
The principle of work of sonic surface wave gas sensors is the absorption of gas to be measured to be caused the variation of surface acoustic wave sensor speed by the sensitive thin film on passage between input interdigital transducer and output interdigital transducer, thereby the variation of output and incoming frequency occurs, cause the drift of surface acoustic wave oscillation frequency, to realize the detection to gas to be measured.Sonic surface wave gas sensors was developed the seventies in last century, because sonic surface wave gas sensors has the characteristics such as volume is little, lightweight, precision is high, resolution is high, antijamming capability is strong, and manufacture craft is simple, and cost is low, is the important supplement of gas sensor.
Along with the development of economic construction, contain a large amount of NO in industrial gaseous waste, motor-vehicle tail-gas
2, NO
2Off-odor excitatory, poisonous, be one of origin cause of formation of acid rain, be also diversified to the pollution of environment simultaneously, therefore require gas NO
2Detection enough sensitivity and selectance will be arranged.
Under existing process conditions, improve NO
2The performance of sonic surface wave gas sensors relates generally to two aspects, and the one, the raising of interdigital transducer performance, the 2nd, the preparation of sensitive thin film and selection, the performance of interdigital transducer, sensitive thin film has directly determined the performance of sonic surface wave gas sensors.
Summary of the invention
The utility model provides a kind of NO for fear of the weak point that prior art exists
2Sonic surface wave gas sensors, this sonic surface wave gas sensors can be realized the demand that high precision, high resolving power, high sensitivity, valid analysing range are linear good and working stability is high.
For solving the problems of the technologies described above, technical scheme that the utility model adopts is as follows:
A kind of NO
2Sonic surface wave gas sensors is comprised of substrate, input interdigital transducer, output interdigital transducer, sensitive thin film, sound absorption electrode, and what wherein substrate was adopted is multi-layer film structure, and sensitive thin film is double-deck sensitive thin film.
The utility model design feature also is:
Described multi-layer film structure is to prepare diamond film on substrate silicon, and its deposit thickness is 20 μ m; Preparation nanometer AL film on diamond film, the AL film thickness is 0.10-0.15 μ m; At nanometer AL film surface preparation nm-class boron nitride BN film, the BN film thickness is 0.8-1.0 μ m.
The preparation of described input interdigital transducer, output interdigital transducer, sound absorption electrode is preparation AL film in the multilayer film substrate, then the AL film is made interdigital transducer IDT electrode and sound absorption electrode; Wherein interdigital logarithm is 24 pairs, interdigital electrode width 0.4 μ m, and interdigital spacing 0.4 μ m, thickness 40nm, the sound absorption thickness of electrode is 50nm.
Described sound absorption electrode is positioned at the two ends of gas sensor.
Compared with the prior art, the utility model beneficial effect is embodied in:
The sensitive thin film good stability has higher sensitivity, less resistivity, wider energy gap and higher catalytic activity.
Surface acoustic wave in the multi-layer film structure substrate (SAW) phase velocity is very high, because diamond sound surface wave (SAW) phase velocity is the highest in all substances, and BN and adamas phase velocity difference are little.
The material thermal expansion coefficient of BN film and diamond film is little, and thermal conductivity is high, and when device bore high-power temperature rising, centre frequency was drifted about very little with the temperature rising, show good frequency-temperature characteristic.
Multi-layer film structure has high electromechanical coupling factor, because added one deck AL film between NB film and diamond film, can effectively improve electromechanical coupling factor, because the AL rete is very thin, so it can be ignored on the impact of acoustic wave propagation velocity; Multi-layer film structure shows very little velocity dispersion in addition, and namely surface wave (SAW) phase velocity is very little with the different variations of frequency, is conducive to reach simultaneously the requirement of high frequency, high electromechanical coupling factor.
The sound absorption electrode is positioned at the two ends of sonic surface wave gas sensors, plays the effect that absorbs sound wave.
Description of drawings
The NO that Fig. 1 the utility model relates to
2The sonic surface wave gas sensors structural representation.
Fig. 2 multi-layer film structure figure of the present utility model.
Number in the figure: 1 substrate, 2 input interdigital transducers, 3 output interdigital transducers, 4 sensitive thin films, 5 sound absorption electrodes, 6 diamond films, 7AL film, 8BN film, 9IDT electrode.
Embodiment
The utility model is described further by embodiment below in conjunction with accompanying drawing.
What as shown in the figure, substrate 1 of the present utility model was adopted is multi-layer film structure.At first utilize microwave plasma CVD method, preparation diamond film 6 on substrate silicon, its deposit thickness 20 μ m require crystal grain tiny, evenly, densification; Then to diamond film 6 surface finish, first carry out rough polishing with diadust, then be that abrasive carries out the surface accurate reparation with silicon dioxide, make diamond film 6 surfacenesses less than 3nm.
Make nanometer AL film 7 in the surperficial method with magnetically controlled DC sputtering of diamond film 6.
Use ultrahigh vacuum rf magnetron sputtering system to prepare NB film 8 on nanometer AL film 7.
Adopt electron-beam vapor deposition method to deposit the AL film that a layer thickness is 100nm on BN film 8, roughness is made interdigital transducers electrodes 9 less than 4nm through etching technics, sound absorption electrode 5.Interdigital electrode width 0.4 μ m, interdigital spacing 0.4 μ m, thickness 40nm.
Claims (4)
1. NO
2Sonic surface wave gas sensors comprises substrate, input interdigital transducer, output interdigital transducer, sensitive thin film, sound absorption electrode, it is characterized in that, described substrate is multi-layer film structure, and described sensitive thin film is double-deck sensitive thin film.
2. a kind of NO according to claim 1
2Sonic surface wave gas sensors is characterized in that, in described multi-layer film structure, is to prepare diamond film on substrate silicon, and diamond film deposition thickness is 20 μ m; Preparation nanometer AL film on diamond film, the AL film thickness is 0.10-0.15 μ m; At nanometer AL film surface preparation nm-class boron nitride BN film, the BN film thickness is 0.8-1.0 μ m.
3. a kind of NO according to claim 1
2Sonic surface wave gas sensors is characterized in that, described input interdigital transducer, output interdigital transducer, sound absorption electrode are preparation AL films in the multi-layer film structure substrate, then the AL film is made interdigital transducer IDT electrode and sound absorption electrode; Wherein interdigital logarithm is 24 pairs, interdigital electrode width 0.4 μ m, and interdigital spacing 0.4 μ m, thickness 40nm, the sound absorption thickness of electrode is 50nm.
4. a kind of NO according to claim 1
2Sonic surface wave gas sensors is characterized in that, described sound absorption electrode is positioned at the two ends of gas sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320000310 CN203011891U (en) | 2013-01-01 | 2013-01-01 | Surface acoustic wave NO2 gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320000310 CN203011891U (en) | 2013-01-01 | 2013-01-01 | Surface acoustic wave NO2 gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203011891U true CN203011891U (en) | 2013-06-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320000310 Expired - Fee Related CN203011891U (en) | 2013-01-01 | 2013-01-01 | Surface acoustic wave NO2 gas sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN203011891U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604864A (en) * | 2013-10-25 | 2014-02-26 | 中国电子科技集团公司第三十八研究所 | Surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
| CN105651815A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nitrogen dioxide sensor and preparation method thereof |
| CN105651814A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nanometer tin-sulfide-based gas sensor and preparation method thereof |
| CN106442717A (en) * | 2016-10-25 | 2017-02-22 | 中国工程物理研究院激光聚变研究中心 | Surface acoustic wave transducer for detecting volatile organic pollutants |
-
2013
- 2013-01-01 CN CN 201320000310 patent/CN203011891U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604864A (en) * | 2013-10-25 | 2014-02-26 | 中国电子科技集团公司第三十八研究所 | Surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
| CN103604864B (en) * | 2013-10-25 | 2016-02-10 | 中国电子科技集团公司第三十八研究所 | A kind of surface acoustic wave formaldehyde gas sensor based on electric conduction composite sensitive material |
| CN105651815A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nitrogen dioxide sensor and preparation method thereof |
| CN105651814A (en) * | 2014-11-12 | 2016-06-08 | 长沙理工大学 | Nanometer tin-sulfide-based gas sensor and preparation method thereof |
| CN105651815B (en) * | 2014-11-12 | 2018-07-31 | 长沙理工大学 | A kind of nitrogen dioxide sensor and preparation method thereof |
| CN106442717A (en) * | 2016-10-25 | 2017-02-22 | 中国工程物理研究院激光聚变研究中心 | Surface acoustic wave transducer for detecting volatile organic pollutants |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130619 Termination date: 20140101 |