CN208704923U - High temperature resistant silicon piezoresistive pressure sensing element - Google Patents
High temperature resistant silicon piezoresistive pressure sensing element Download PDFInfo
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- CN208704923U CN208704923U CN201821376948.7U CN201821376948U CN208704923U CN 208704923 U CN208704923 U CN 208704923U CN 201821376948 U CN201821376948 U CN 201821376948U CN 208704923 U CN208704923 U CN 208704923U
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- silicon
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- transparent plate
- piezoresistive pressure
- high temperature
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Abstract
A kind of high temperature resistant silicon piezoresistive pressure sensing element disclosed by the utility model, it is desirable to provide a kind of performance steady in a long-term is good, the response time is fast, pressure-sensing device resistant to high temperature.The utility model provides following technical proposals and is achieved: transparent plate (the silicon pressure drag pressure-sensitive chip (3) that 5 top stacking anode linkage scribings are formed, and the ring disk by supporting in circumferential direction forms disk chamber, the Hui Sideng electric bridge of four pressure-sensitive resistance composition of four central symmetry platinum electrode guide posts in silicon piezoresistive pressure chip bottom, towards transparent plate, the guide post contraposition fallen into the circumferentially distributed bellmouth of transparent plate (4) is formed with by the ring disk bottom to fix, the plain conductor (7) uniformly distributed around transparent plate center of circle equal part passes through insulator (6), it protrudes into the bellmouth filled with conductive silver paste, the transparent base of tested stress is born together with the glass insulator one high temperature sintering composition being fixed below transparent plate, realize pressure measurement under hot environment.
Description
Technical field
The utility model relates to a kind of high temperature silicon piezoresistive pressure sensing elements that can be widely used for various pressure-measuring systems.
Background technique
As the continuous technology in the fields such as China's Aeronautics and Astronautics, ship, electric power, petroleum, chemical industry develops, need using temperature
Degree up to 430 DEG C or more, pressure measurement range up to 60MPa or more, output signal sensitivity up to 30mv/V or more, measurement accuracy reach ±
The high temperature silicon piezoresistive pressure sensing element of the engineering application of 0.1%FS.Piezoresistive pressure sensor is also known as solid state pressure biography
Sensor refers to sensor made of the piezoresistive effect and integrated circuit technique using single crystal silicon material.Single crystal silicon material by
After the effect of power, resistivity changes, and the electric signal output for being proportional to power variation can be just obtained by measuring circuit.Due to half
Conductor material is very sensitive to temperature, and four detection resistances of piezoresistive pressure sensor are connected in Wheatstone bridge type more, therefore
Piezoresistive pressure sensor diffuses up 4 equivalent semiconductor resistors in silicon diaphragm certain party, and connects into Wheatstone bridge,
Sensing element as electric transducer.When diaphragm is acted on by ambient pressure, when electric bridge disequilibrium, if applying constant current to electric bridge
Or constant pressure excitation power supply, can obtain to by the directly proportional output voltage of measuring pressure, to achieve the purpose that measure pressure.
The silicon piezoresistance type pressure sensor generallyd use at present is answered all by directly bearing the matrix of tested stress by tested
Power is transmitted to the convoluted diaphragm of chip, and the chip for detecting tested stress is made of 3 essential parts: chip is in silicon elastic film piece
Upper to make identical 4 pressure-sensitive resistance with semiconductor particular crystal orientation, they are linked to be Hui Si by the front production pressure drag full-bridge at it
Energization bridge constitutes basic pressure-sensing device.Diaphragm is the substrate of force sensing resistance, and is the bearing object of applied stress.Its
In, intermediate very thin concavity, referred to as silicon cup are processed into the method mechanically or chemically corroded on the silicon diaphragm back side.If silicon cup
It is circular pit, is known as circular film.There are also the diversified forms such as rectangular, rectangle for diaphragm.When there are applied stress, diaphragm
On the stress that is subject to everywhere be different.Position and direction setting of 4 arm resistances on diaphragm will be according to crystal orientation and stress
To determine.The design and production of diaphragm determine the performance and range of sensor.Between the convoluted diaphragm and chip of sensor
It is filled with silicone oil, the pressure sensor of this oil-filled encapsulating structure is quite mature at present.Range be 0~100kPa to 0~
60MPa, operating temperature are -40 DEG C~125 DEG C, and precision is 0.5%~0.1%；It can be realized gauge pressure, absolute pressure measurement.This biography
Sensor generallys use integrated technique and resistor stripe is integrated in monocrystalline silicon membrane on piece, is made silicon pressure drag chip, and by the week of this chip
Side fixation is packaged within shell.Spread the silicon piezoresistive pressure sensing element of silicon materials and lead key closing process preparation, Yin Qili
Easily changed with temperature with the electric bridge resistance value that diffusion technique is formed, and the piezoresistance coefficient of pressure drag component has biggish negative temperature system
Number, these easily cause the discrete of resistance value and temperature-coefficient of electrical resistance, lead to thermal sensitivity drift and the zero point drift of pressure sensor
It moves.Environment temperature can only be within the scope of -40 DEG C~+120 DEG C, and the silicon piezoresistive pressure sensing element precision of preparation is low, reliability
Difference, high-low temperature resistant scarce capacity.The high-end applications of various pressure-measuring systems can only be by the silicon pressure drag of external high temperature high precision
Pressure sensor is realized, but price is high, the period is long, embargo risk is big.It is, in principle, that silicon piezoresistive pressure sensor is with silicon material
Physical property type transducer based on material, silicon materials are influenced by environmental temperature, can generate very big zero temperature drift and spirit
Sensitivity temperature drift, and it is various informative, it is very unfavorable to the stability for improving device, while silicon piezoresistive pressure sensor must carry out
Otherwise temperature-compensating is industrially difficult to apply；The technique for temperature compensation for establishing complete set not only increases cost, while also increasing
Add human resources, in a sense, significantly limits the extensive use of silicon piezoresistive pressure sensor.
It is limited currently based on the pressure-sensing device of diffusion silicon technology by material, structural principle, manufacture craft, it can not
Meet the requirement of adverse circumstances and long time stability so that such technology the high-end fields such as aerospace application by
To limitation.The utility model breaches the key technologies such as the application of SOI material, structure design and simulation, non-leaded package, solves height
Warm bottleneck is further improvement of existing technologies and development.
Utility model content
The purpose of this utility model is place in view of the shortcomings of the prior art, and it is brilliant to provide a kind of high-temperature behavior, can
By property height, the response time is fast, and long-time stability are good, small in size, simple for structure, can adapt to that various pressure-measuring systems are high-end to answer
High temperature resistant silicon piezoresistive pressure sensing element.
To achieve the goals above, technical solutions of the utility model provide a kind of high temperature resistant silicon piezoresistive pressure sensing element,
Include: the insulator being fixed on stainless steel circular cylindrical shell intracavity bottom cylinder step and its stacking be connected transparent plate thereon,
And stacking is connected the transparent ring above it, which is characterized in that the silicon pressure drag that stacking anode linkage scribing is formed above transparent plate
Pressure-sensitive chip, and the ring disk by supporting in circumferential direction forms disk chamber, four central symmetry platinum in silicon piezoresistive pressure chip bottom
Gold electrode guide post four pressure-sensitive resistance composition Hui Sideng electric bridge, towards transparent plate, be formed with by the ring disk bottom fall into it is transparent
Guide post in the circumferentially distributed bellmouth 4 of disk, which aligns, to be fixed, and the plain conductor uniformly distributed around transparent plate center of circle equal part passes through insulation
Son protrudes into the bellmouth filled with conductive silver paste, together with the glass insulator one high temperature sintering being fixed below transparent plate
Composition bears the transparent base of tested stress, the silicon piezoresistive pressure chip being fixed on above transparent plate, by clamping in silicon pressure
Hinder the flexible sheet silicon ring between pressure chip and transparent ring, impression 8 compression face of end cap above stainless steel circular cylindrical shell 1
By measuring pressure, Hui Sideng electric bridge is generated the voltage signal of personal comments piezoresistance rate variation by bridge balance is lost after the effect of power,
Silicon piezoresistive pressure chip under voltage or current excitation, by the output of plain conductor 7 to by the proportional analog voltage of measuring pressure
Measuring signal.
The utility model has the advantages that compared with the prior art.
High-temperature behavior is brilliant, high reliablity.The utility model is using the insulator 6 being fixed in stainless steel circular cylindrical shell 1
And its front anode linkage transparent plate 5 that stacking is connected thereon, the SOI silicon piezoresistive pressure chip 3 being fixed on transparent plate 5, with
And the backing transparent ring 2 that stacking is connected thereon forms high temperature resistant silicon piezoresistive pressure sensing element, presses design layout through MEMS technology
Flow SOI silicon piezoresistive pressure chip 3 after molding, front bonding transparent plate 5, the back side is bonded transparent ring 2, SOI silicon piezoresistive pressure
The glass pedestal that chip 3, plain conductor 7, stainless steel circular cylindrical shell 1 and insulator 6 form, using filling conductive silver in bellmouth
High temperature silicon piezoresistive pressure sensing element is formed without lead high temperature sintering after slurry, is resistant to temperature up to 430 DEG C or more, pressure measurement range
± 0.1%FS is reached up to 30mv/V, measurement accuracy up to 60MPa, output signal sensitivity, can be met using temperature up to 430 DEG C
Various high temperature pressure measurement system requirements.
Response time is fast.The utility model is manufactured using front anode linkage transparent plate 5 around uniformly distributed 4 of center of circle equal part
Fixed after 4 platinum electrodes contraposition on bellmouth 4, with silicon piezoresistive pressure chip 3, plain conductor 7 passes through the insulator 6
It protrudes into the bellmouth 4 filled with conductive silver paste, it is high together with 6 one of glass insulator being fixed on stainless steel circular cylindrical shell 1
Temperature sintering composition bears the transparent base of tested stress, has that parasitic capacitance is small, integration density is high, speed is fast, simple process, short
The advantages such as channelling effect is small.The silicon piezoresistive pressure chip 3 being fixed on glass insulator 6, impression come from stainless steel cylinder cover
1 top end cap of body, 8 compression face by measuring pressure.The Hui Sideng electric bridge that four pressure-sensitive resistance forms on silicon piezoresistive pressure chip, by
To after the effect of power, Hui Sideng electric bridge disequilibrium, pressure-sensitive resistivity changes, output and quilt under voltage or current excitation
The proportional analog voltage signal of measuring pressure, response time are fast.
Long-time stability are good.The utility model using silicon technology constitute 3 backing bottom of SOI silicon piezoresistive pressure chip with it is transparent
The semiconductive thin film that one layer of buries oxide layer is formed is introduced between 5 top layer silicon of disk, and 3 component of silicon piezoresistive pressure chip may be implemented
Medium isolation, completely eliminates the parasitic latch-up of body silicon, solves the problems, such as that diffusion silicon structure high-temperature current leakage is big；Pass through
High temperature application may be implemented in the insulator lining of insulator 6.
It is simple for structure, good manufacturability.The utility model uses and is fixed on 1 intracavity bottom cylinder step of stainless steel circular cylindrical shell
On insulator 6 and its stacking be connected transparent plate 5 thereon, and stacking is connected the transparent ring 2 above it, simple for structure, adopts
It may be implemented with domestic technique, good manufacturability.And it is easy for installation, be easy to produce in batches.Silicon pressure drag chip 3 is adopted with glass pedestal
After filling conductive silver paste with bellmouth 4, this no lead high temperature sintering forms the high temperature silicon piezoresistive pressure sensing element, uses
Stainless steel circular cylindrical shell 1 and 4 piece plain conductor 7 is sintered composition glass pedestal through insulator 6, and compact, volume is no more than straight
Diameter Φ 5mm × length 5mm.
The utility model is versatile, suitable for the pressure sensor secondary encapsulation of various installation interfaces, can be widely used for work
Industry equipment, water conservancy, chemical industry, medical treatment, electric power, air-conditioning, diamond press, metallurgy, vehicle braking, building supply water etc. pressure measurements with
Control.
Detailed description of the invention
Fig. 1 is the utility model high temperature resistant silicon piezoresistive pressure sensing element structural schematic diagram.
In figure: 1 stainless steel circular cylindrical shell, 2 transparent rings, 3 silicon piezoresistive pressure chips, 4 bellmouths, 5 transparent plates, 6 insulators,
7 plain conductors, 8 end caps.
Specific embodiment
Refering to fig. 1.In the embodiment described below, a kind of high temperature silicon piezoresistive pressure sensing element, comprising: be fixed on not
The front transparent disk 5 that insulator 6 and its stacking in rust steel circular cylindrical shell 1 are connected thereon, the SOI silicon being fixed on transparent plate 5
Piezoresistive pressure chip 3, and the backing transparent ring 2 that stacking is connected thereon, wherein silicon piezoresistive pressure chip 3 is passed through by design layout
After MEMS technology flow machine-shaping, front anode linkage transparent plate 5, back anode is bonded transparent ring 2, and scribing forms single
Silicon pressure drag pressure-sensitive chip.Front anode linkage transparent plate 5 manufactures 4 bellmouths 4 uniformly distributed around center of circle equal part, with silicon pressure drag pressure
Fixed after 4 platinum electrodes contraposition on power chip 3, plain conductor 7 passes through the insulator 6 and protrudes into filled with conductive silver paste
In bellmouth 4, together with the glass insulator 6 being fixed on stainless steel circular cylindrical shell 1, integrated high temperature sintering composition bears tested answer
The transparent base of power, the silicon piezoresistive pressure chip 3 being fixed on glass insulator 6, impression is on stainless steel circular cylindrical shell 1
8 compression face of square end lid by measuring pressure.The Hui Sideng electric bridge that four pressure-sensitive resistance forms on silicon piezoresistive pressure chip, by power
After effect, Hui Sideng electric bridge disequilibrium, pressure-sensitive resistivity changes, and exports under voltage or current excitation and by measuring pressure
Proportional analog voltage signal realizes the purpose of pressure measurement under hot environment.
One layer of buries oxide layer formation medium is introduced between 3 backing bottom of silicon piezoresistive pressure chip and 5 top layer silicon of transparent plate to be isolated
Semiconductive thin film.
Silicon piezoresistive pressure chip 3 presses design layout after MEMS technology flow machine-shaping, front anode linkage transparent plate
5, back anode is bonded transparent ring 2, and scribing forms single silicon pressure drag pressure-sensitive chip.
Silicon piezoresistive pressure chip 3 is one piece of N-type silicon diaphragm along the cutting of certain crystal orientation, and silicon diaphragm utilizes integrated circuit thereon
Process spreads the equal p-type resistance of four resistance values, is constituted balanced bridge with conducting wire.Silicon diaphragm top is with rectangular convex
Platform silicon wafer is fixed, and its underpart is the pressure chamber being connected with system under test (SUT), and top can be with the square central boss shape between transparent plate 2
At the isolated chambers of elastic silicon diaphragm communicate.8 matrix of end cap is directly born by measuring pressure, and transparent ring 2 and 8 matrix of end cap are tested
Physical contact between media will be transmitted to chip detection by measuring pressure by elastic silicon diaphragm by measuring pressure.
Claims (6)
1. a kind of high temperature resistant silicon piezoresistive pressure sensing element, comprising: be fixed on stainless steel circular cylindrical shell (1) intracavity bottom cylinder platform
The transparent plate (5) that insulator (6) on rank and its stacking are connected thereon, and stacking are connected the transparent ring (2) above it, special
Sign is, the silicon piezoresistive pressure chip (3) that anode linkage scribing is formed is laminated above transparent plate (5), and by supporting in circumferential direction
The ring disk form disk chamber, four pressure-sensitive electricity of four central symmetry platinum electrode guide posts on silicon piezoresistive pressure chip (3) bottom
The Hui Sideng electric bridge of resistance composition is formed with by the ring disk bottom towards transparent plate (5) and falls into the circumferentially distributed taper of transparent plate (5)
Guide post in hole (4), which aligns, to be fixed, and the plain conductor (7) uniformly distributed around transparent plate (5) center of circle equal part passes through insulator (6), is stretched
Enter in the bellmouth (4) filled with conductive silver paste, together with the integrated high temperature of glass insulator (6) being fixed below transparent plate (5)
Sintering composition bears the transparent base of tested stress, and the silicon piezoresistive pressure chip (3) being fixed on above transparent plate (5) passes through
Flexible sheet silicon ring of the clamping between silicon piezoresistive pressure chip (3) and transparent ring (2), impression come from stainless steel circular cylindrical shell
(1) top end cap (8) compression face by measuring pressure.
2. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
One layer of buries oxide layer is introduced between backing bottom and transparent plate (5) top layer silicon forms the semiconductive thin film that medium is isolated.
3. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
By design layout after MEMS technology flow machine-shaping, front anode linkage transparent plate (5), back anode is bonded transparent ring
(2), scribing forms single silicon piezoresistive pressure chip.
4. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
It is one piece of N-type silicon diaphragm along the cutting of certain crystal orientation, silicon diaphragm spreads upper four resistance values using integrated circuit technology method thereon
Equal p-type resistance, is constituted balanced bridge with conducting wire.
5. high temperature resistant silicon piezoresistive pressure sensing element as claimed in claim 4, it is characterised in that: silicon diaphragm top is with rectangular convex
Platform silicon wafer is fixed, and its underpart is the pressure chamber being connected with system under test (SUT).
6. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: end cap (8) directly bears quilt
Measuring pressure, transparent ring (2) directly contact with end cap (8) matrix measured medium, will be transmitted to by measuring pressure by elastic silicon diaphragm
Chip is detected by measuring pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201821376948.7U CN208704923U (en) | 2018-08-25 | 2018-08-25 | High temperature resistant silicon piezoresistive pressure sensing element |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821376948.7U CN208704923U (en) | 2018-08-25 | 2018-08-25 | High temperature resistant silicon piezoresistive pressure sensing element |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109060201A (en) * | 2018-08-25 | 2018-12-21 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
| CN110823446A (en) * | 2019-10-18 | 2020-02-21 | 成都凯天电子股份有限公司 | Secondary temperature compensation zero debugging method for silicon piezoresistive pressure sensor |
| CN111554587A (en) * | 2020-07-01 | 2020-08-18 | 广州德芯半导体科技有限公司 | Batch manufacturing method of corrosion-resistant absolute pressure chips |
| CN114136528A (en) * | 2021-12-07 | 2022-03-04 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
-
2018
- 2018-08-25 CN CN201821376948.7U patent/CN208704923U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109060201A (en) * | 2018-08-25 | 2018-12-21 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
| CN110823446A (en) * | 2019-10-18 | 2020-02-21 | 成都凯天电子股份有限公司 | Secondary temperature compensation zero debugging method for silicon piezoresistive pressure sensor |
| CN111554587A (en) * | 2020-07-01 | 2020-08-18 | 广州德芯半导体科技有限公司 | Batch manufacturing method of corrosion-resistant absolute pressure chips |
| CN114136528A (en) * | 2021-12-07 | 2022-03-04 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
| CN114136528B (en) * | 2021-12-07 | 2024-03-01 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
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