CN109060201A - High temperature resistant silicon piezoresistive pressure sensing element - Google Patents
High temperature resistant silicon piezoresistive pressure sensing element Download PDFInfo
- Publication number
- CN109060201A CN109060201A CN201810976527.6A CN201810976527A CN109060201A CN 109060201 A CN109060201 A CN 109060201A CN 201810976527 A CN201810976527 A CN 201810976527A CN 109060201 A CN109060201 A CN 109060201A
- Authority
- CN
- China
- Prior art keywords
- pressure
- silicon
- transparent plate
- chip
- piezoresistive pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
Abstract
A kind of high temperature resistant silicon piezoresistive pressure sensing element disclosed by the invention, it is desirable to provide a kind of performance steady in a long-term is good, the response time is fast, pressure-sensing device resistant to high temperature.The present invention provides following technical proposals and is achieved: the silicon pressure drag pressure-sensitive chip (3) that stacking anode linkage scribing is formed above transparent plate (5), and the ring disk by supporting in circumferential direction forms disk chamber, the Hui Sideng electric bridge of four pressure-sensitive resistance composition of four central symmetry platinum electrode guide posts in silicon piezoresistive pressure chip bottom, towards transparent plate, the guide post contraposition fallen into the circumferentially distributed bellmouth of transparent plate (4) is formed with by the ring disk bottom to fix, the plain conductor (7) uniformly distributed around transparent plate center of circle equal part passes through insulator (6), it protrudes into the bellmouth filled with conductive silver paste, the transparent base of tested stress is born together with the glass insulator one high temperature sintering composition being fixed below transparent plate, realize pressure measurement under hot environment.
Description
Technical field
The present invention relates to a kind of high temperature silicon pressure drag pressures that can be widely used for the various pressure-measuring systems in the fields such as aerospace
Force sensitive element.
Background technique
Current MEMS pressure sensor has silicon piezoresistance type pressure sensor and Silicon Pressure Sensor of Capacitance, both
The micromechanics electronic sensor generated on silicon wafer.With fields such as China's Aeronautics and Astronautics, ship, electric power, petroleum, chemical industry
Continuous technology development needs to reach using temperature up to 430 DEG C or more, pressure measurement range up to 60MPa or more, output signal sensitivity
30mv/V or more, measurement accuracy are engineered the high temperature silicon piezoresistive pressure sensing element applied up to ± 0.1%FS's.In aircraft jet
In the measurement of engine center pressure, using the silicon pressure sensor specially designed, operating temperature is up to 500 DEG C or more.Silicon pressure
Resistance pressure transducer converts measuring circuit as power electricity using high-accuracy semiconductor resistor composition resistance bridge.Silicon pressure
Force snesor is substantially divided into two classes: condenser type and pressure resistance type.Capacitance pressure transducer, includes a film, it is as variable
One pole plate of capacitor, when bearing pressure on film, film generates displacement, to change capacitance, utilizes this variation
By corresponding processing of circuit, so that it may obtain pressure value.Piezoresistive pressure sensor is sensitive member with pressure resistance type diffusion silicon bridge road
Part, also known as solid state pressure sensor.Piezoresistive pressure sensor can generate resistance variations when bearing pressure using silicon materials
Principle is made, and the strain resistor of 4 silicon materials is generally constituted Wheatstone bridge to measure pressure.Silicon piezoresistive pressure sensor is
It will be right by diffusion or ion implantation technology using the good mechanical performance of monocrystalline silicon and electric property using silicon piezoresistive principles
Pressure-sensitive resistance is injected into pressure-sensitive film, realizes integrated and production the sensor of pressure element and conversion circuit.Pressure
Resistor stripe is integrated in monocrystalline silicon membrane on piece using integrated technique by resistance pressure transducer, is made silicon pressure drag chip, and by this core
The periphery fixation of piece is packaged within shell, extraction electrode lead.After the effect by power, resistivity occurs single crystal silicon material
Variation can just obtain the electric signal output for being proportional to power variation by measuring circuit.Since semiconductor material is very quick to temperature
Four detection resistances of sense, piezoresistive pressure sensor are connected in Wheatstone bridge type more, therefore piezoresistive pressure sensor is in silicon
Diaphragm certain party diffuses up 4 equivalent semiconductor resistors, and connects into Wheatstone bridge, the sensitivity member as electric transducer
Part.When diaphragm is acted on by ambient pressure, when electric bridge disequilibrium, if applying constant current or constant pressure excitation power supply to electric bridge,
It obtains realizing measurement pressure to by the directly proportional output voltage of measuring pressure.
The silicon piezoresistance type pressure sensor generallyd use at present is all by directly bearing the matrix of tested stress, by tested stress
It is transmitted to the pressure containing disk of chip, the chip for detecting tested stress is made of 3 essential parts: chip is in silicon elastic film on piece
Identical 4 pressure-sensitive resistance is made with semiconductor particular crystal orientation, they are linked to be favour stone by the front production pressure drag full-bridge at it
Electric bridge constitutes basic pressure-sensing device.Diaphragm is the substrate of force sensing resistance, and is the bearing object of applied stress.Wherein,
Intermediate very thin concavity, referred to as silicon cup are processed into the method mechanically or chemically corroded on the silicon diaphragm back side.If silicon cup is
Circular pit, is known as circular film.There are also the diversified forms such as rectangular, rectangle for diaphragm.When there are applied stress, on diaphragm
The stress being subject to everywhere is different.4 arm resistances on diaphragm position and direction setting will according to crystal orientation and stress come
It determines.The design and production of diaphragm determine the performance and range of sensor.It is filled out between the convoluted diaphragm and chip of sensor
Silicone oil is filled, the pressure sensor of this oil-filled encapsulating structure is quite mature at present.Range be 0~100kPa to 0~
60MPa, operating temperature are -40 DEG C~125 DEG C, and precision is 0.5%~0.1%；It can be realized gauge pressure, absolute pressure measurement.This biography
Sensor generallys use integrated technique and resistor stripe is integrated in monocrystalline silicon membrane on piece, is made silicon pressure drag chip, and by the week of this chip
Side fixation is packaged within shell.Spread the silicon piezoresistive pressure sensing element of silicon materials and lead key closing process preparation, Yin Qili
Easily changed with temperature with the electric bridge resistance value that diffusion technique is formed, and the piezoresistance coefficient of pressure drag component has biggish negative temperature system
Number, these easily cause the discrete of resistance value and temperature-coefficient of electrical resistance, lead to thermal sensitivity drift and the zero point drift of pressure sensor
It moves.Environment temperature can only within the scope of -40 DEG C~+120 DEG C, the silicon piezoresistive pressure sensing element precision of preparation is low, poor reliability,
High-low temperature resistant scarce capacity.Non-linear to be deteriorated as sensitivity improves, bad stability, overload capacity is inadequate.Pressure drag type pressure
Sensor generallys use integrated technique and resistor stripe is integrated in monocrystalline silicon membrane on piece, is made silicon pressure drag chip, and by this chip
Periphery fixation is packaged within shell, extraction electrode lead.The variation of this structural resistance then depends primarily on geometric dimension
Change (strain).Process practice shows, when processing pressure resistance type micro pressure sensor using body silicon wet-etching technology, sensitive membrane
There are thickness deviation, resistor stripe, which deviates stress maximum region, leads to position deviation for sector-meeting, and resistor stripe, which deviates desired crystal orientation, to be caused
Tilting tolerance.Research shows that 2 μm of thickness deviation can make sensitivity decline about 10%, the linearity can be decreased obviously；Position is inclined
Difference can make sensing element deviate stress maximum region and reduce sensitivity；5 ° of resistor stripe tilting tolerance can make sensitivity decline big
About 3%.Piezoresistive pressure sensor is to be encapsulated in silicon piezoresistance type sensing element in different pressure interfaces to constitute, by measuring pressure
It is acted on silicon-sensitive element by pressure interface.The substrate or diaphragm material of piezoresistive transducer are mainly sensitivity with silicon wafer
Material and it is manufactured, diffuse up 4 equivalent semiconductor resistors in silicon diaphragm certain party, and connect into Wheatstone bridge.From
It is said in principle, silicon piezoresistive pressure sensor is the physical property type transducer based on silicon materials, and silicon materials are influenced by ambient temperature
It is larger.It is either lightly doped or heavy doping, sensitivity coefficient is gradually reduced with the raising of temperature.The zero point temperature of generation
Degree drift and sensitivity temperature drift are various informative, very unfavorable to the stability for improving device, while silicon piezoresistive pressure sensor
Temperature-compensating must be carried out, is otherwise industrially difficult to apply；The high-end applications of current various pressure-measuring systems can only rely on state
The silicon piezoresistive pressure sensor of outer high temperature high precision is realized, but price is high, the period is long, embargo risk is big.
It is limited currently based on the pressure-sensing device of diffusion silicon technology by material, structural principle, manufacture craft, it can not
Meet the requirement of adverse circumstances and long time stability so that such technology the high-end fields such as aerospace application by
To limitation.The present invention is further improvement of existing technologies and development.
Summary of the invention
In place of in view of the shortcomings of the prior art, a kind of high sensitivity is provided, high-temperature behavior is tall and erect
More, the response time is fast, and long-time stability are good, small in size, simple for structure, can adapt to various pressure-measuring system high-end applications
High temperature resistant silicon piezoresistive pressure sensing element.
To achieve the goals above, technical solution of the present invention provides a kind of high temperature resistant silicon piezoresistive pressure sensing element, comprising:
The transparent plate that the insulator 6 and its stacking being fixed on 1 intracavity bottom cylinder step of stainless steel circular cylindrical shell are connected thereon
5, and stacking is connected the transparent ring 2 above it, which is characterized in that the silicon that anode linkage scribing is formed is laminated above transparent plate 5
Pressure drag pressure-sensitive chip 3, and the ring disk by supporting in circumferential direction forms disk chamber, four centers on 3 bottom of silicon piezoresistive pressure chip
The Hui Sideng electric bridge of four pressure-sensitive resistance composition of symmetrical platinum electrode guide post is formed with by the ring disk bottom and is fallen towards transparent plate 5
The guide post contraposition entered in the circumferentially distributed bellmouth 4 of transparent plate 5 is fixed, the plain conductor 7 uniformly distributed around 5 center of circle equal part of transparent plate
It across insulator 6, protrudes into the bellmouth 4 filled with conductive silver paste, together with the glass insulator 6 for being fixed on 5 lower section of transparent plate
Integrated high temperature sintering composition bears the transparent base of tested stress, is fixed on the silicon piezoresistive pressure chip 3 of 5 top of transparent plate,
By elastic silicon diaphragm of the clamping between silicon piezoresistive pressure chip 3 and transparent ring 2, impression is on stainless steel circular cylindrical shell 1
8 compression face of square end lid by measuring pressure, Hui Sideng electric bridge is generated personal comments piezoresistance rate by bridge balance is lost after the effect of power
The voltage signal of variation, silicon piezoresistive pressure chip 3 are exported and by measuring pressure under voltage or current excitation by plain conductor 7
Proportional analog voltage measurement signal.
The present invention has the advantages that compared with the prior art.
High sensitivity, high-temperature behavior are brilliant.The present invention using the insulator 6 that is fixed in stainless steel circular cylindrical shell 1 and its
The front anode linkage transparent plate 5 that stacking is connected thereon, SOI silicon piezoresistive pressure chip 3 and the layer being fixed on transparent plate 5
The folded backing transparent ring 2 being connected thereon forms high temperature resistant silicon piezoresistive pressure sensing element, presses design layout flow through MEMS technology
SOI silicon piezoresistive pressure chip 3 after molding, front bonding transparent plate 5, the back side is bonded transparent ring 2, SOI silicon piezoresistive pressure chip
3, the glass pedestal that plain conductor 7, stainless steel circular cylindrical shell 1 and insulator 6 form, after filling conductive silver paste in bellmouth
No lead high temperature sintering forms high temperature silicon piezoresistive pressure sensing element, is resistant to temperature up to 430 DEG C or more, pressure measurement range is reachable
60MPa, output signal sensitivity reach ± 0.1%FS up to 30mv/V, measurement accuracy, breach the application of SOI material, structure design
The key technologies such as emulation, non-leaded package solve high temperature bottleneck, can meet and be surveyed using temperature up to 430 DEG C of various high temperature pressures
Amount system requirement.
Response time is fast.The present invention manufactures 4 tapers uniformly distributed around center of circle equal part using front anode linkage transparent plate 5
Fixed after 4 platinum electrodes contraposition on hole 4, with silicon piezoresistive pressure chip 3, plain conductor 7 is protruded into across the insulator 6 and is filled out
In bellmouth 4 filled with conductive silver paste, together with the integrated high temperature sintering of glass insulator 6 being fixed on stainless steel circular cylindrical shell 1
Composition bears the transparent base of tested stress, with parasitic capacitance is small, integration density is high, speed is fast, simple process, short channel effect
Answer the advantages such as small, output and input between there is good linear relationships, good linearity.Since there are four force sensing resistance groups to help
The wheatstone bridge of bridge-type, though four resistance all by transverse pressure, and have similar nonlinear characteristic, and it is non-when constituting full-bridge
Linear characteristic can cancel out each other, therefore non-linear can be made very small.The silicon piezoresistive pressure core being fixed on glass insulator 6
Piece 3, impression above stainless steel circular cylindrical shell 18 compression face of end cap by measuring pressure.Four pressure-sensitive on silicon piezoresistive pressure chip
The Hui Sideng electric bridge of resistance composition, after the effect of power, Hui Sideng electric bridge disequilibrium, pressure-sensitive resistivity changes,
Exported under voltage or current excitation to by the proportional analog voltage signal of measuring pressure.Response time is fast, and sensitivity can be done
Must be very high, untreated sensor output can be made full use of to obtain maximized resolution ratio.Due in silicon piezoresistive pressure
Chip 3 is connected firmly using annulus elastic element with integrated with transparent plate 5, and size is small, and intrinsic frequency is very high, can be with measured frequency model
Enclose very wide fluctuation pressure.
Long-time stability are good.SOI silicon piezoresistive pressure chip 3 backing bottom and transparent plate 5 of the present invention using silicon technology composition
The semiconductive thin film that one layer of buries oxide layer is formed is introduced between top layer silicon, and Jie of 3 component of silicon piezoresistive pressure chip may be implemented
Matter isolation, completely eliminates the parasitic latch-up of body silicon, solves the problems, such as that diffusion silicon structure high-temperature current leakage is big；By exhausted
High temperature application may be implemented in the insulator lining of edge 6.Using diffusion technique formed electric bridge resistance value easily change with temperature, by every
It is encapsulated from diaphragm filling liquid, can be further improved the reliability and stability of silicon piezoresistive pressure sensor, can be pressure signal
High resolution ratio is provided, even across long-time service or in extreme temperature conditions, performance can also be in the industry other any one
Kind pressure sensor compares favourably, and has leading stability.
It is simple for structure, good manufacturability.The present invention is used and is fixed on 1 intracavity bottom cylinder step of stainless steel circular cylindrical shell
Insulator 6 and its stacking are connected transparent plate 5 thereon, and stacking is connected the transparent ring 2 above it, simple for structure, using state
Interior technique may be implemented, good manufacturability.And it is easy for installation, be easy to produce in batches.Silicon pressure drag chip 3 and glass pedestal are using cone
After conductive silver paste is filled in shape hole 4, this no lead high temperature sintering forms the high temperature silicon piezoresistive pressure sensing element, and use is stainless
Steel circular cylindrical shell 1 and 4 piece plain conductor 7 is sintered composition glass pedestal, compact through insulator 6, and volume is not more than diameter of phi
5mm × length 5mm.
The present invention is versatile, suitable for the pressure sensor secondary encapsulation of various installation interfaces, can be widely used for industry and sets
Pressure measurements and the controls such as standby, water conservancy, chemical industry, medical treatment, electric power, air-conditioning, diamond press, metallurgy, vehicle braking, building water supply
System.Suitable for dynamic pressure measurement.For the transducer range from 0~100kPa to 0~60MPa, operating temperature is -55 DEG C~430 DEG C,
Precision is 0.5%~0.1%.Intrinsic frequency from several kilo hertzs to several hundred conspicuous, can be used for airflow model test, blast pressure test and
Engine dynamic measures.It is particularly well suited to measure the stream pressure distribution of helicopter wing, test engine air inlet moves
State distortion, the fluctuation pressure of leaf grating and shake of wing etc..
Detailed description of the invention
Fig. 1 is high temperature resistant silicon piezoresistive pressure sensing element structural schematic diagram of the present invention.
In figure: 1 stainless steel circular cylindrical shell, 2 transparent plates, 3 silicon piezoresistive pressure chips, 4 bellmouths, 5 transparent plates, 6 insulators,
7 plain conductors, 8 end caps, 9 elastic silicon diaphragms, 10 substrate film beams, 11 pressure chambers.
Specific embodiment
Refering to fig. 1.In the embodiment described below, a kind of high temperature silicon piezoresistive pressure sensing element, comprising: be fixed on not
The front transparent disk 5 that insulator 6 and its stacking in rust steel circular cylindrical shell 1 are connected thereon, the SOI silicon being fixed on transparent plate 5
Piezoresistive pressure chip 3, and the backing transparent ring 2 that stacking is connected thereon, wherein silicon piezoresistive pressure chip 3 is passed through by design layout
After MEMS technology flow machine-shaping, front anode linkage transparent plate 5, back anode is bonded transparent ring 2, and scribing forms single
Silicon pressure drag pressure-sensitive chip.Front anode linkage transparent plate 5 manufactures 4 bellmouths 4 uniformly distributed around center of circle equal part, with silicon pressure drag pressure
Fixed after 4 platinum electrodes contraposition on power chip 3, plain conductor 7 passes through the insulator 6 and protrudes into filled with conductive silver paste
In bellmouth 4, together with the glass insulator 6 being fixed on stainless steel circular cylindrical shell 1, integrated high temperature sintering composition bears tested answer
The transparent base of power, the silicon piezoresistive pressure chip 3 being fixed on glass insulator 6, impression is on stainless steel circular cylindrical shell 1
8 compression face of square end lid by measuring pressure.The Hui Sideng electric bridge that four pressure-sensitive resistance forms on silicon piezoresistive pressure chip, by power
After effect, Hui Sideng electric bridge disequilibrium, pressure-sensitive resistivity changes, and exports under voltage or current excitation and by measuring pressure
Proportional analog voltage signal realizes the purpose of pressure measurement under hot environment.
One layer of buries oxide layer formation medium is introduced between 3 backing bottom of silicon piezoresistive pressure chip and 5 top layer silicon of transparent plate to be isolated
Semiconductive thin film.For silicon piezoresistive pressure chip 3 by design layout after MEMS technology flow machine-shaping, front anode linkage is saturating
Listed price 5, back anode are bonded transparent ring 2, and scribing forms single silicon pressure drag pressure-sensitive chip.In silicon piezoresistive pressure chip 3 and thoroughly
Listed price 5 connects firmly substrate film beam 10 with integrated using elastic silicon diaphragm 9.
The silicon piezoresistive pressure chip 3 of its core is the silicon diaphragm of one piece of N-type along the cutting of certain crystal orientation, and silicon diaphragm utilizes
Integrated circuit technology method thereon spreads the equal p-type resistance of four resistance values, is constituted balanced bridge with conducting wire.Silicon fiml
Piece top is fixed with square boss silicon wafer, and its underpart is the pressure chamber 11 being connected with system under test (SUT), and top can be between transparent plate 2
The isolated chambers of elastic silicon diaphragm 9 that are formed of square central boss communicate.8 matrix of end cap directly bears tested stress, transparent
Disk 2 is directly contacted with 8 matrix of end cap with measured medium, and tested stress is transmitted to chip detection by elastic silicon diaphragm 9 and is tested
Pressure.Under by measuring pressure P effect, silicon diaphragm generates stress and strain.Four resistance are along crystal orientation and respectively at x=0.635r
Collateral arrangement, the resistance receiving in the inside of 0.635r is positive value, i.e., what resistance on the outside of tensile stress was born is negative value, i.e.,
Compression.Four resistance access differential bridge, and original state balances, and after stress P, differential bridge output is corresponding with P.[0018
It is the description to the present invention and its embodiment provided to the engineers and technicians in familiar field of the present invention, these descriptions above
It should be considered to be illustrative and not restrictive.Engineers and technicians can the thought accordingly in invention claims do and have
The operation of body is implemented, without prejudice to the spirit and scope of the invention as defined in the appended claims, can be to it in form
It is made a variety of changes in upper and details.Above-mentioned these are regarded as coverage of the invention.
Claims (7)
1. a kind of high temperature resistant silicon piezoresistive pressure sensing element, comprising: be fixed on stainless steel circular cylindrical shell (1) intracavity bottom cylinder platform
The transparent plate (5) that insulator (6) on rank and its stacking are connected thereon, and stacking are connected the transparent ring (2) above it, special
Sign is, the silicon pressure drag pressure-sensitive chip (3) that anode linkage scribing is formed is laminated above transparent plate (5), and by supporting in circumferential direction
The ring disk form disk chamber, four pressure-sensitive electricity of four central symmetry platinum electrode guide posts on silicon piezoresistive pressure chip (3) bottom
The Hui Sideng electric bridge of resistance composition is formed with by the ring disk bottom towards transparent plate (5) and falls into the circumferentially distributed taper of transparent plate (5)
Guide post in hole (4), which aligns, to be fixed, and the plain conductor (7) uniformly distributed around transparent plate (5) center of circle equal part passes through insulator (6), is stretched
Enter in the bellmouth (4) filled with conductive silver paste, together with the integrated high temperature of glass insulator (6) being fixed below transparent plate (5)
Sintering composition bears the transparent base of tested stress, and the silicon piezoresistive pressure chip (3) being fixed on above transparent plate (5) passes through
Elastic silicon diaphragm of the clamping between silicon piezoresistive pressure chip (3) and transparent ring (2), impression come from stainless steel circular cylindrical shell (1)
Top end cap (8) compression face by measuring pressure, Hui Sideng electric bridge is generated personal comments piezoelectricity by bridge balance is lost after the effect of power
Resistance rate variation voltage signal, silicon piezoresistive pressure chip (3) under voltage or current excitation, by plain conductor (7) output with
By the proportional analog voltage measurement signal of measuring pressure.
2. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
One layer of buries oxide layer is introduced between backing bottom and transparent plate (5) top layer silicon forms the semiconductive thin film that medium is isolated.
3. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
By design layout after MEMS technology flow machine-shaping, front anode linkage transparent plate (5), back anode is bonded transparent ring
(2), scribing forms single silicon pressure drag pressure-sensitive chip.
4. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: be fixed on transparent plate (5)
The silicon piezoresistive pressure chip (3) of top passes through flexible sheet of the clamping between silicon piezoresistive pressure chip (3) and transparent ring (2)
Silicon wafer, impression is from stainless steel circular cylindrical shell (1) top end cap (8) compression face by measuring pressure, and Hui Sideng electric bridge is by power
Bridge balance is lost after effect, generates the voltage signal of personal comments piezoresistance rate variation, silicon piezoresistive pressure chip (3) is in voltage or electricity
Under stream excitation, by plain conductor (7) output to by the proportional analog voltage measurement signal of measuring pressure.
5. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
With transparent plate (5) through the four central symmetry platinum electrode guide posts and plain conductor (7) and substrate film beam (10) one on bottom
Change high temperature sintering to connect firmly.
6. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon piezoresistive pressure chip (3)
It is one piece of N-type silicon diaphragm along the cutting of certain crystal orientation, silicon diaphragm spreads upper four resistance values using integrated circuit technology method thereon
Equal p-type resistance, is constituted balanced bridge with conducting wire.
7. high temperature resistant silicon piezoresistive pressure sensing element as described in claim 1, it is characterised in that: silicon diaphragm top is with rectangular convex
Platform silicon wafer is fixed, and its underpart is the pressure chamber being connected with system under test (SUT), the square central boss shape between top and transparent plate (2)
At the isolated chambers of elastic silicon diaphragm communicate, end cap (8) matrix is directly born by measuring pressure, transparent plate (2) and end cap (8) base
Body measured medium directly contacts, and chip detection will be transmitted to by measuring pressure by measuring pressure by elastic silicon diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810976527.6A CN109060201A (en) | 2018-08-25 | 2018-08-25 | High temperature resistant silicon piezoresistive pressure sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810976527.6A CN109060201A (en) | 2018-08-25 | 2018-08-25 | High temperature resistant silicon piezoresistive pressure sensing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109060201A true CN109060201A (en) | 2018-12-21 |
Family
ID=64757012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810976527.6A Pending CN109060201A (en) | 2018-08-25 | 2018-08-25 | High temperature resistant silicon piezoresistive pressure sensing element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109060201A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109724721A (en) * | 2019-01-21 | 2019-05-07 | 武汉大学 | The SiC high-temp pressure sensor and its manufacturing method of non-leaded package |
| CN112731653A (en) * | 2020-12-31 | 2021-04-30 | 歌尔股份有限公司 | MEMS scanning mirror and laser projector |
| CN112798160A (en) * | 2021-03-05 | 2021-05-14 | 山东重心电子科技有限公司 | Small-size and large-range pressure sensor |
| CN113401861A (en) * | 2021-05-21 | 2021-09-17 | 成都凯天电子股份有限公司 | Multi-range integrated composite membrane type MEMS pressure sensor |
| CN114136528A (en) * | 2021-12-07 | 2022-03-04 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
| CN114216603A (en) * | 2022-02-21 | 2022-03-22 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN114993548A (en) * | 2022-05-30 | 2022-09-02 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
| CN115420952A (en) * | 2022-11-04 | 2022-12-02 | 之江实验室 | High temperature piezoresistive property measurement platform and method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07162018A (en) * | 1993-12-13 | 1995-06-23 | Nagano Keiki Seisakusho Ltd | Semiconductor pressure sensor |
| US5589810A (en) * | 1991-03-28 | 1996-12-31 | The Foxboro Company | Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements |
| JPH10325772A (en) * | 1997-05-27 | 1998-12-08 | Nissan Motor Co Ltd | Semiconductor pressure sensor and its manufacture |
| WO2001040751A1 (en) * | 1999-11-30 | 2001-06-07 | Robert Bosch Gmbh | Semiconductor pressure sensor and measuring arrangement |
| US20140001584A1 (en) * | 2011-03-15 | 2014-01-02 | Memsen Electronics Inc | Mems pressure sensor and manufacturing method therefor |
| CN103616123A (en) * | 2013-11-22 | 2014-03-05 | 中航（重庆）微电子有限公司 | Pressure sensor and manufacturing method thereof |
| CN103645000A (en) * | 2013-11-22 | 2014-03-19 | 中航（重庆）微电子有限公司 | High-temperature pressure sensor and preparation method thereof |
| CN205449349U (en) * | 2016-01-04 | 2016-08-10 | 沈阳化工大学 | MEMS polycrystalline silicon nanometer membrane pressure sensor chip |
| US20180275000A1 (en) * | 2015-08-17 | 2018-09-27 | Institute of Geolgy and Geophysics, Chinese Academy of Sciences | Mems pressure gauge sensor and manufacturing method |
| CN208704923U (en) * | 2018-08-25 | 2019-04-05 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
-
2018
- 2018-08-25 CN CN201810976527.6A patent/CN109060201A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589810A (en) * | 1991-03-28 | 1996-12-31 | The Foxboro Company | Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements |
| JPH07162018A (en) * | 1993-12-13 | 1995-06-23 | Nagano Keiki Seisakusho Ltd | Semiconductor pressure sensor |
| JPH10325772A (en) * | 1997-05-27 | 1998-12-08 | Nissan Motor Co Ltd | Semiconductor pressure sensor and its manufacture |
| WO2001040751A1 (en) * | 1999-11-30 | 2001-06-07 | Robert Bosch Gmbh | Semiconductor pressure sensor and measuring arrangement |
| US20140001584A1 (en) * | 2011-03-15 | 2014-01-02 | Memsen Electronics Inc | Mems pressure sensor and manufacturing method therefor |
| CN103616123A (en) * | 2013-11-22 | 2014-03-05 | 中航（重庆）微电子有限公司 | Pressure sensor and manufacturing method thereof |
| CN103645000A (en) * | 2013-11-22 | 2014-03-19 | 中航（重庆）微电子有限公司 | High-temperature pressure sensor and preparation method thereof |
| US20180275000A1 (en) * | 2015-08-17 | 2018-09-27 | Institute of Geolgy and Geophysics, Chinese Academy of Sciences | Mems pressure gauge sensor and manufacturing method |
| CN205449349U (en) * | 2016-01-04 | 2016-08-10 | 沈阳化工大学 | MEMS polycrystalline silicon nanometer membrane pressure sensor chip |
| CN208704923U (en) * | 2018-08-25 | 2019-04-05 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109724721A (en) * | 2019-01-21 | 2019-05-07 | 武汉大学 | The SiC high-temp pressure sensor and its manufacturing method of non-leaded package |
| CN112731653B (en) * | 2020-12-31 | 2023-09-12 | 歌尔股份有限公司 | MEMS scanning mirror and laser projector |
| CN112731653A (en) * | 2020-12-31 | 2021-04-30 | 歌尔股份有限公司 | MEMS scanning mirror and laser projector |
| CN112798160A (en) * | 2021-03-05 | 2021-05-14 | 山东重心电子科技有限公司 | Small-size and large-range pressure sensor |
| CN113401861A (en) * | 2021-05-21 | 2021-09-17 | 成都凯天电子股份有限公司 | Multi-range integrated composite membrane type MEMS pressure sensor |
| CN113401861B (en) * | 2021-05-21 | 2024-02-23 | 成都凯天电子股份有限公司 | Multi-range integrated composite diaphragm type MEMS pressure sensor |
| CN114136528A (en) * | 2021-12-07 | 2022-03-04 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
| CN114136528B (en) * | 2021-12-07 | 2024-03-01 | 华东光电集成器件研究所 | SOI pressure sensitive chip |
| CN114216603B (en) * | 2022-02-21 | 2022-05-24 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN114216603A (en) * | 2022-02-21 | 2022-03-22 | 成都凯天电子股份有限公司 | Pressure sensor |
| CN114993548B (en) * | 2022-05-30 | 2023-09-01 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
| CN114993548A (en) * | 2022-05-30 | 2022-09-02 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
| CN115420952B (en) * | 2022-11-04 | 2023-03-24 | 之江实验室 | High temperature piezoresistive property measurement platform and method |
| CN115420952A (en) * | 2022-11-04 | 2022-12-02 | 之江实验室 | High temperature piezoresistive property measurement platform and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109060201A (en) | High temperature resistant silicon piezoresistive pressure sensing element | |
| CN100561156C (en) | The SOI complete silicon structure silicone-oil-filling high-temperature-resistance pressure sensor | |
| CN208704923U (en) | High temperature resistant silicon piezoresistive pressure sensing element | |
| CN102589762B (en) | Micro-voltage high-overload sensor chip of beam membrane single island structure | |
| CN102012288B (en) | Composite micro-electro-mechanical system (MEMS) high-temperature resistant ultrahigh-pressure sensor | |
| CN102853950B (en) | Piezoresistive pressure sensor chip adopting face down bonding and preparing method thereof | |
| San et al. | Silicon–glass-based single piezoresistive pressure sensors for harsh environment applications | |
| CN101672710A (en) | Beam-film combined micro-pressure sensor | |
| CN101706345A (en) | Method for compensating for heat drift of sensibility of micro pressure sensor | |
| CN102620865B (en) | Beam-film double island structure micro-pressure high-overload sensor chip | |
| CN212807437U (en) | Core body of differential pressure sensor | |
| CN113401861B (en) | Multi-range integrated composite diaphragm type MEMS pressure sensor | |
| CN215448264U (en) | Composite diaphragm type MEMS pressure sensor | |
| CN113639902A (en) | Pressure sensor and manufacturing method thereof | |
| CN203178006U (en) | Pressure transducer packaging structure | |
| Tang et al. | Structure design and optimization of SOI high-temperature pressure sensor chip | |
| US3482197A (en) | Pressure sensitive device incorporating semiconductor transducer | |
| CN101694409A (en) | Method for manufacturing all-silica pressure chips of SOI oil pressure sensor | |
| CN215893878U (en) | High-temperature-resistant oil-filled pressure detection device | |
| US3493912A (en) | Strain responsive transducer means of the diaphragm type | |
| Aravamudhan et al. | MEMS based conductivity-temperature-depth (CTD) sensor for harsh oceanic environment | |
| Jiang et al. | Oil-filled Isolated high pressure sensor for high temperature application | |
| CN113624368A (en) | High-temperature-resistant oil-filled SOI pressure sensor | |
| CN201707160U (en) | Piezoresistive pressure sensor integrated base | |
| CN203132745U (en) | Nano-film pressure sensor based on sacrificial layer technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |