CN112731653A - MEMS scanning mirror and laser projector - Google Patents
MEMS scanning mirror and laser projector Download PDFInfo
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- CN112731653A CN112731653A CN202011635225.6A CN202011635225A CN112731653A CN 112731653 A CN112731653 A CN 112731653A CN 202011635225 A CN202011635225 A CN 202011635225A CN 112731653 A CN112731653 A CN 112731653A
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- scanning mirror
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/101—Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/12—Scanning systems using multifaceted mirrors
- G02B26/127—Adaptive control of the scanning light beam, e.g. using the feedback from one or more detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/005—Projectors using an electronic spatial light modulator but not peculiar thereto
- G03B21/008—Projectors using an electronic spatial light modulator but not peculiar thereto using micromirror devices
Abstract
The invention discloses an MEMS scanning mirror and a laser projector. In one embodiment, the MEMS scanning mirror comprises a mirror and a mirror deflection angle sensing mechanism; the mirror deflection angle sensing mechanism includes a pressure sensor including a film-like piezoresistive element of a symmetrical shape and first, second, third and fourth ends led out from the piezoresistive element for constituting a wheatstone bridge, the first and second ends being located at both ends of the piezoresistive element in a direction of a symmetry axis, the third and fourth ends being symmetrically arranged with respect to the symmetry axis. This embodiment may reduce the number of piezoresistive elements in the piezoresistive pressure sensor in the MEMS scanning mirror, thereby reducing the volume of the piezoresistive pressure sensor and reducing the restrictions on its wiring and layout.
Description
Technical Field
The invention relates to the technical field of laser projection. And more particularly, to a MEMS scanning mirror and a laser projector.
Background
The laser projector adopting the MEMS (Micro Electro Mechanical System) scanning mirror has the advantages of low cost, miniaturization and the like, and has wide market prospect.
The traditional MEMS scanning mirror usually adopts a torsion bar actuating mode, the reflecting mirror is driven by two, three or more torsion bars supporting the reflecting mirror to incline and twist so as to execute optical scanning, a resonance drive is adopted to realize a large scanning angle, and the resonance frequency of the inclined movement of the reflecting mirror needs to be matched with the driving frequency through structural design.
In order to maintain a resonance state when driving the MEMS scanning mirror or monitoring the mirror angle, it is a current practice to provide an angle sensor for sensing the deflection angle of the mirror, and a driver controls a driving voltage or a driving frequency applied to an actuator according to a signal output from the angle sensor to drive the mirror to rotate. For a traditional torsion bar type MEMS scanning mirror, the angle sensor is an angle sensor which is arranged at the edge position of a torsion bar and adopts a piezoelectric effect or a piezoresistive effect.
On the one hand, for an angle sensor employing piezoresistive effect, which is a piezoresistive pressure sensor, comprising four piezoresistive elements arranged at the edge of a torsion bar, wherein the piezoresistive elements have the property that their resistance value changes due to stress (piezoresistive effect). As shown in fig. 1, the conventional piezoresistive pressure sensor is composed of four piezoresistive elements 4a, 4b, 4c and 4d in a wheatstone bridge, wherein the leading electrode 5a of the piezoresistive element 4a is connected to a voltage VDD, the leading electrode 5b of the piezoresistive element 4b is grounded, the leading electrode 5c of the piezoresistive element 4c and the leading electrode 5d of the piezoresistive element 4d are used as output terminals of the wheatstone bridge, the four piezoresistive elements 4a, 4b, 4c and 4d are made of silicon wafers, and the four piezoresistive elements 4a, 4b, 4c and 4d are required to form the wheatstone bridge, so that the piezoresistive pressure sensor has many limitations in the preparation and formation of the MEMS scanning mirror, such as large volume, limitation on the wiring and layout thereof, and the like.
On the other hand, for MEMS scanning mirrors, for applications with relatively low driving frequencies, it is necessary to use lower resonance frequencies, and for this reason, the prior art proposes a solution using an external piezoelectric actuator forming a bent cantilever (i.e. a folded spring structure, a plate hinge) as a design suitable for low-frequency driving to lower the resonance frequency. For example, as shown in fig. 2, the two-dimensional MEMS scanning mirror includes: a reflector 10; a movable support 11 (inner movable frame), the movable support 11 surrounding the mirror 10 to support the mirror 10 by a pair of torsion bars 12a and 12 b; first and second internal piezoelectric actuators 13a and 13b, the first and second internal piezoelectric actuators 13a and 13b being respectively fixed between the movable support 11 and the torsion bars 12a and 12b and respectively serving as cantilevers for rotating the mirror 10 about the X-axis by the torsion bars 12a and 12 b; a fixed support 14 (external fixed frame), the fixed support 14 surrounding the movable support 11; and first and second external piezoelectric actuators 15a and 15b, the first and second external piezoelectric actuators 15a and 15b being respectively fixed between the fixed support member 14 and the movable support member 11 and respectively serving as flexure-shaped cantilevers, for rotating the mirror 10 about the Y-axis, which is perpendicular to the X-axis, by means of the movable support 11, thereby achieving two-dimensional scanning, the driving signal for driving the first inner piezoelectric actuator 13a and the second inner piezoelectric actuator 13b is a sine wave or rectangular wave signal with a frequency of 20kHz or more, and the driving signal for driving the first outer piezoelectric actuator 15a and the second outer piezoelectric actuator 15b is a sawtooth wave signal with a frequency of about 60Hz (i.e. the X axis is the fast axis, and the Y axis is the slow axis), so as to realize the fast transverse scanning and the slow longitudinal scanning of the two-dimensional MEMS scanning mirror. In the two-dimensional MEMS scanning mirror structure as shown in fig. 2 using an external piezoelectric actuator forming a bent cantilever, for detecting the deflection angle of the mirror 10 rotating around the Y axis, as shown in fig. 3, it is a conventional way to provide the edge of the movable support 11 with a sensing beam 16, and provide a piezoresistive pressure sensor (not shown in fig. 3) on the sensing beam 16 for sensing the deflection angle of the mirror 10 rotating around the Y axis. However, this method causes an obstacle to the rotation of the mirror 10, and it is difficult to accurately drive the mirror 10 while following the resonance frequency.
Therefore, it is desirable to provide a new MEMS scanning mirror and laser projector.
Disclosure of Invention
An object of the present invention is to provide a MEMS scanning mirror and a laser projector to solve at least one of the problems of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a MEMS scanning mirror, comprising a reflecting mirror and a reflecting mirror deflection angle sensing mechanism; the mirror deflection angle sensing mechanism includes a pressure sensor including a film-like piezoresistive element of a symmetrical shape and first, second, third and fourth ends led out from the piezoresistive element for constituting a wheatstone bridge, the first and second ends being located at both ends of the piezoresistive element in a direction of a symmetry axis, the third and fourth ends being symmetrically arranged with respect to the symmetry axis.
Optionally, the piezoresistive element is circular, rectangular or diamond in shape.
Optionally, the third and fourth terminals are linear terminals led out from the symmetrical shape, and the electrodes led out from the third and fourth terminals are symmetrically arranged, and the third and fourth terminals are used as output ends of the wheatstone bridge.
Alternatively, the extraction electrodes of the first and second ends are in line contact with the film-like piezoresistive element, respectively, and the contact areas are the same.
Optionally, the MEMS scanning mirror further includes a support, a first sensing beam, and a first piezoelectric actuator and a second piezoelectric actuator that are respectively used as a cantilever, where the first piezoelectric actuator and the second piezoelectric actuator are used to rotate the mirror around a first rotation axis, one end of the first sensing beam is connected to the support, and the other end of the first sensing beam is connected to one side of the mirror, and the piezoresistive pressure sensor is disposed on the first sensing beam.
Optionally, one end of the first sensing beam connected to the support and the other end of the first sensing beam connected to the reflector are respectively located on the first rotating shaft.
Optionally, the piezoresistive pressure sensor is disposed at a position close to an end of the first sensing beam.
Optionally, the piezoresistive pressure sensor is disposed at a position close to one end of the first sensing beam connecting support.
A second aspect of the invention provides a laser projector comprising a MEMS scanning mirror as provided in the first aspect of the invention.
The invention has the following beneficial effects:
the technical scheme of the invention can reduce the number of the piezoresistor elements in the piezoresistive pressure sensor in the MEMS scanning mirror, thereby reducing the volume of the piezoresistive pressure sensor and reducing the limitation on the wiring and the layout of the piezoresistive pressure sensor.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings;
fig. 1 shows a schematic diagram of a prior art piezoresistive pressure sensor.
FIG. 2 shows a schematic diagram of a prior art two-dimensional MEMS scanning mirror.
FIG. 3 shows a schematic diagram of a sense beam used by a prior two-dimensional MEMS scanning mirror for positioning a piezoresistive pressure sensor.
FIG. 4 shows a schematic diagram of a piezoresistive pressure sensor in a MEMS scanning mirror provided by an embodiment of the present invention.
FIG. 5 shows a schematic diagram of a sense beam in a MEMS scanning mirror provided by embodiments of the present invention in a specific example.
Fig. 6 shows a schematic view of the connection of the first sense beam to the fixed support in the specific example shown in fig. 5.
Fig. 7 shows a schematic view of the connection of the first sense beam to the movable support in the specific example shown in fig. 5.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
As shown in fig. 4, an embodiment of the present invention provides a piezoresistive pressure sensor 30 in a MEMS scanning mirror, the pressure sensor 30 includes a film-shaped piezoresistive element 6 with a symmetrical shape, and a first end 7a, a second end 7b, a third end 7c and a fourth end 7d leading from the piezoresistive element 6 to form a wheatstone bridge, the first end 7a and the second end 7b are located at two ends of the piezoresistive element 6 in a direction of a symmetry axis (a central vertical direction of the piezoresistive element 6 in fig. 1), and the third end 7c and the fourth end 7d are arranged symmetrically with respect to the symmetry axis.
The present embodiment provides a piezoresistive pressure sensor 30 in which the number of piezoresistive elements is reduced compared to the conventional piezoresistive pressure sensor shown in fig. 1, so that the overall volume of the piezoresistive pressure sensor can be reduced, and restrictions on the wiring and layout thereof can be reduced. Among them, the film-like piezoresistive element 6, which has a property that its resistance value changes due to stress (piezoresistive effect), may be made of a silicon wafer, and the surface portion is made of a material having piezoresistive effect, may convert the stress change into a resistance change, and thus may be used to sense a deflection angle change corresponding to the stress change when used in a MEMS scanning mirror.
In some alternative implementations of the present embodiment, the piezoresistive element 6 is circular, rectangular or diamond in shape.
In some optional implementations of this embodiment, the third terminal 7c and the fourth terminal 7d are linear terminals led out from the symmetrical shape, the lead-out electrode 8c of the third terminal 7c and the lead-out electrode 8d of the fourth terminal 7d are symmetrically arranged, and the third terminal 7c and the fourth terminal 7d serve as output terminals of the wheatstone bridge.
In some alternative implementations of the present embodiment, the extraction electrode 8a of the first end 7a and the extraction electrode 8b of the second end 7b are respectively in line contact with the piezoresistive element 6 and have the same contact area.
Another embodiment of the present invention provides a MEMS scanning mirror, comprising a mirror, and further comprising the piezoresistive pressure sensor 30 provided in the above embodiment, wherein the piezoresistive pressure sensor 30 is used for sensing the deflection angle of the mirror.
In some optional implementations of this embodiment, the MEMS scanning mirror further includes a support, a first sensing beam, and a first piezoelectric actuator and a second piezoelectric actuator, which are respectively used as a cantilever, where the first piezoelectric actuator and the second piezoelectric actuator are used to rotate the mirror around a first rotation axis, one end of the first sensing beam is connected to the support, and the other end of the first sensing beam is connected to one side of the mirror, and the piezoresistive pressure sensor 30 is disposed on the first sensing beam.
This implementation can avoid causing the hindrance to the rotation of speculum, promotes the precision to speculum deflection angle detection, and is favorable to realizing the miniaturization of MEMS scanning mirror, and the specially adapted adopts the MEMS scanning mirror of crooked shape cantilever, is favorable to realizing stable drive, is applicable to and realizes the wide-angle scanning with low frequency drive frequency.
In some optional implementations of this embodiment, one end of the first sensing beam connected to the supporting member and the other end connected to the mirror are respectively located on the first rotating shaft. The realization mode can further ensure to avoid the interference on the rotation of the reflector and further improve the precision of the deflection angle detection of the reflector.
In some alternative implementations of the present embodiment, the piezoresistive pressure sensor 30 is disposed proximate to an end of the first sense beam. Further, the piezoresistive pressure sensor 30 is disposed near one end of the first sensing beam connecting support. The realization mode can further ensure to avoid the interference on the rotation of the reflector and can further ensure the precision of the deflection angle detection of the reflector. It will be appreciated that the first sense beam may transmit the rotational torque of the mirror about the first axis of rotation to the piezoresistive pressure sensor 30.
In some alternative implementations of this embodiment, the first piezoelectric actuator and the second piezoelectric actuator each form a curved cantilever.
In some optional implementations of this embodiment, the first sense beam is disposed around a side of the first piezoelectric actuator. The implementation mode is convenient for preparing the first sensing beam and can ensure the miniaturization of the whole MEMS scanning mirror.
In some optional implementations of this embodiment, the MEMS scanning mirror further includes a second sensing beam, one end of the second sensing beam is connected to the support, the other end of the second sensing beam is connected to the other side of the mirror, and another piezoresistive pressure sensor 30 for sensing a deflection angle of the mirror rotating around the first rotation axis is disposed on the second sensing beam.
In some optional implementations of this embodiment, one end of the second sensing beam connected to the supporting member and the other end connected to the mirror are respectively located on the first rotating shaft. The realization mode can further ensure to avoid the interference on the rotation of the reflector and further improve the precision of the deflection angle detection of the reflector.
In some alternative implementations of the present embodiment, the piezoresistive pressure sensor 30 is located near the end of the second sense beam. Further, the piezoresistive pressure sensor 30 is disposed near one end of the second sensing beam connecting support. The realization mode can further ensure to avoid the interference on the rotation of the reflector and can further ensure the precision of the deflection angle detection of the reflector.
In some optional implementations of this embodiment, the second sense beam is disposed around a side of the second piezoelectric actuator. The implementation mode is convenient for preparing the second sensing beam and can ensure the miniaturization of the whole MEMS scanning mirror.
In some optional implementations of this embodiment, the first piezoelectric actuator and the second piezoelectric actuator are a first external piezoelectric actuator and a second external piezoelectric actuator, respectively, that is, the first piezoelectric actuator and the second piezoelectric actuator are used in cooperation for slow scanning of the two-dimensional MEMS mirror. It is to be understood that in the case where the first and second piezoelectric actuators are first and second external piezoelectric actuators, respectively, one side of the first sensing beam where one end is connected to the support member and the other end is connected to the mirror is to be understood as one side of the first sensing beam where one end is connected to the fixed support member and the other end is connected to the movable support member. In addition, the first piezoelectric actuator and the second piezoelectric actuator may also be a first internal piezoelectric actuator and a second internal piezoelectric actuator, respectively, and in this case, one end of the first sensing beam connected to the support and the other end connected to the side of the mirror should be understood as one end of the first sensing beam connected to the movable support and the other end connected to the side of the mirror. Of course, the detection of the deflection angles of the rotation of the mirror around the X axis and the Y axis can also be implemented by using the structure of the MEMS scanning mirror provided in this embodiment, and further, two sensing beams in this embodiment can be provided for the detection of the deflection angles of the rotation of the mirror around the X axis and the Y axis, in this case, the structure of the MEMS scanning mirror provided in this embodiment can be described as follows: the MEMS scanning mirror comprises a fixed support, a movable support, a reflecting mirror, a first internal piezoelectric actuator, a second internal piezoelectric actuator, a first external piezoelectric actuator and a second external piezoelectric actuator, wherein the first internal piezoelectric actuator, the second internal piezoelectric actuator and the first external piezoelectric actuator are respectively used as cantilevers and used for enabling the reflecting mirror to rotate around a first rotating shaft (X axis), the first external piezoelectric actuator and the second external piezoelectric actuator are used for enabling the reflecting mirror to rotate around a second rotating shaft (Y axis) (through the movable support), the MEMS scanning mirror further comprises a first sensing beam, a second sensing beam, a third sensing beam and a fourth sensing beam, one end of the first sensing beam is connected with the movable support, the other end of the first sensing beam is connected with one side of the reflecting mirror, one end of the second sensing beam is connected with the movable support, the other end of the second sensing beam is connected with the other side of the reflecting mirror, one end of the third sensing beam is connected with the fixed support, the other end of the first sensing beam is connected with one side of the movable supporting piece, one end of the second sensing beam is connected with the fixed supporting piece, the other end of the second sensing beam is connected with the other side of the movable supporting piece, piezoresistive pressure sensors 30 used for sensing the deflection angle of the reflector rotating around the first rotating shaft are respectively arranged on the first sensing beam and the second sensing beam, and piezoresistive pressure sensors 30 used for sensing the deflection angle of the reflector rotating around the second rotating shaft are respectively arranged on the third sensing beam and the fourth sensing beam.
The above implementation defines that the first piezoelectric actuator and the second piezoelectric actuator are respectively a first external piezoelectric actuator and a second external piezoelectric actuator, that is, the MEMS scanning mirror is a two-dimensional MEMS scanning mirror, and it can be understood that, for a one-dimensional MEMS scanning mirror, the MEMS scanning mirror structure provided in this embodiment may also be adopted.
In a specific example, in combination with the foregoing implementation manner, the two-dimensional MEMS scanning mirror is further described with the MEMS scanning mirror provided in this embodiment: on the basis of the conventional two-dimensional MEMS scanning mirror shown in fig. 2, as shown in fig. 5 to 7, in the two-dimensional MEMS scanning mirror of this example, a first sensing beam 26 is provided around a side of a first external piezoelectric actuator 25a forming a bent cantilever, and a second sensing beam 27 is provided around a side of a second external piezoelectric actuator 25b forming a bent cantilever. The first sensing beam 26 is connected to the fixed support 24 at one end of the first sensing beam 26, and connected to one side of the movable support 21 at the other end thereof, and the first sensing beam 26 is connected to one end of the fixed support 24 and connected to the other end of the movable support 21 respectively on the Y axis, as shown in fig. 6, a piezoresistive pressure sensor 30 for sensing a deflection angle of the mirror rotating around the Y axis is disposed on the first sensing beam 26 at a position close to one end of the first sensing beam 26 connected to the fixed support 24.
In this example, the mirror is made of a single crystal silicon supporting layer serving as a vibration plate, a metal layer serving as a reflector, and a hard mask layer. The movable support 21 is composed of a single crystal silicon active layer and a silicon dioxide layer. The first external piezoelectric actuator 25a and the second external piezoelectric actuator 25b forming a bending cantilever are respectively constituted by a vibration plate, a lower electrode, a piezoelectric body (PZT), and an upper electrode. The fixed support 24 is composed of a single crystal silicon layer, an intermediate silicon layer, a single crystal silicon active layer, a silicon dioxide layer, and a hard mask layer.
Another embodiment of the present invention provides a laser projector, which includes the MEMS scanning mirror provided in the above embodiments, and further includes a laser light source, optical devices such as collimation shaping, a laser driving circuit, a MEMS scanning mirror driving circuit, and the like.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
It is further noted that, in the description of the present invention, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations and modifications can be made on the basis of the above description, and all embodiments cannot be exhaustive, and all obvious variations and modifications belonging to the technical scheme of the present invention are within the protection scope of the present invention.
Claims (9)
1. An MEMS scanning mirror comprises a reflecting mirror and a reflecting mirror deflection angle sensing mechanism; the mirror deflection angle sensing mechanism is characterized by comprising a pressure sensor, wherein the pressure sensor comprises a film-shaped piezoresistor element with a symmetrical shape, and a first end, a second end, a third end and a fourth end which are led out from the piezoresistor element and used for forming a Wheatstone bridge, the first end and the second end are positioned at two ends of the piezoresistor element in the direction of a symmetry axis, and the third end and the fourth end are symmetrically arranged around the symmetry axis.
2. The MEMS scanning mirror of claim 1, wherein the piezoresistive element is circular, rectangular or diamond in shape.
3. A MEMS scanning mirror according to claim 2, wherein the third and fourth terminals are linear leads leading from the symmetrical shape, the electrodes leading from the third and fourth terminals being symmetrically arranged, the third and fourth terminals serving as output terminals of a wheatstone bridge.
4. The MEMS scanning mirror according to claim 3, wherein the extraction electrodes of the first and second ends are in line contact with the film-like piezoresistive element, respectively, and have the same contact area.
5. The MEMS scanning mirror according to claim 1, further comprising a support, a first sensing beam, and a first piezo actuator and a second piezo actuator serving as a cantilever, respectively, for rotating the mirror about a first rotation axis, wherein one end of the first sensing beam is connected to the support, the other end is connected to one side of the mirror, and the piezoresistive pressure sensor is disposed on the first sensing beam.
6. The MEMS scanning mirror of claim 5, wherein one end of the first sensing beam connected to the support and the other end connected to the mirror are respectively located on the first rotation axis.
7. The MEMS scanning mirror of claim 6, wherein the piezoresistive pressure sensor is disposed proximate to an end of the first sense beam.
8. The MEMS scanning mirror of claim 7, wherein the piezoresistive pressure sensor is disposed proximate to an end of the first sense beam connection support.
9. A laser projector comprising a MEMS scanning mirror according to any one of claims 1 to 8.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201034757Y (en) * | 2007-03-02 | 2008-03-12 | 清华大学 | Wide stressed zone silicon pressure sensor |
| CN202487304U (en) * | 2011-12-21 | 2012-10-10 | 昆山萬豐電子有限公司 | Lightningproof pressure sensitive resistor for overvoltage protection |
| JP2012237788A (en) * | 2011-05-10 | 2012-12-06 | Konica Minolta Advanced Layers Inc | Optical scanner and image projection device equipped with the same |
| CN102998795A (en) * | 2011-09-08 | 2013-03-27 | 富士胶片株式会社 | Mirror driving apparatus, method of driving same and method of manufacturing same |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103323946A (en) * | 2012-03-22 | 2013-09-25 | 日立视听媒体股份有限公司 | Light scanning mirror device, control method for the same, and image drawing device employing the same |
| CN103968975A (en) * | 2014-05-07 | 2014-08-06 | 衢州学院 | Corrosion resistant pressure sensor based on PDMS piezoresistor and stainless steel capacitor |
| CN109060201A (en) * | 2018-08-25 | 2018-12-21 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
| CN110095859A (en) * | 2018-01-29 | 2019-08-06 | 三美电机株式会社 | The manufacturing method of light scanning apparatus and light scanning apparatus |
| CN110274712A (en) * | 2018-03-13 | 2019-09-24 | 阿自倍尓株式会社 | Piezoresistive transducer |
-
2020
- 2020-12-31 CN CN202011635225.6A patent/CN112731653B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201034757Y (en) * | 2007-03-02 | 2008-03-12 | 清华大学 | Wide stressed zone silicon pressure sensor |
| JP2012237788A (en) * | 2011-05-10 | 2012-12-06 | Konica Minolta Advanced Layers Inc | Optical scanner and image projection device equipped with the same |
| CN102998795A (en) * | 2011-09-08 | 2013-03-27 | 富士胶片株式会社 | Mirror driving apparatus, method of driving same and method of manufacturing same |
| CN202487304U (en) * | 2011-12-21 | 2012-10-10 | 昆山萬豐電子有限公司 | Lightningproof pressure sensitive resistor for overvoltage protection |
| CN103323946A (en) * | 2012-03-22 | 2013-09-25 | 日立视听媒体股份有限公司 | Light scanning mirror device, control method for the same, and image drawing device employing the same |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103968975A (en) * | 2014-05-07 | 2014-08-06 | 衢州学院 | Corrosion resistant pressure sensor based on PDMS piezoresistor and stainless steel capacitor |
| CN110095859A (en) * | 2018-01-29 | 2019-08-06 | 三美电机株式会社 | The manufacturing method of light scanning apparatus and light scanning apparatus |
| CN110274712A (en) * | 2018-03-13 | 2019-09-24 | 阿自倍尓株式会社 | Piezoresistive transducer |
| CN109060201A (en) * | 2018-08-25 | 2018-12-21 | 成都凯天电子股份有限公司 | High temperature resistant silicon piezoresistive pressure sensing element |
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