CN112484630A - Thin film resistance strain pressure sensor and layout optimization method thereof - Google Patents
Thin film resistance strain pressure sensor and layout optimization method thereof Download PDFInfo
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- CN112484630A CN112484630A CN202011426884.9A CN202011426884A CN112484630A CN 112484630 A CN112484630 A CN 112484630A CN 202011426884 A CN202011426884 A CN 202011426884A CN 112484630 A CN112484630 A CN 112484630A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
Abstract
The invention discloses a film resistance strain pressure sensor and a layout optimization method thereof, wherein the film resistance strain pressure sensor comprises a film-shaped sensitive circuit arranged on a flat diaphragm, and comprises four resistors R1-R4 which are connected end to form a Wheatstone bridge, the resistors R1 and R4 are formed by connecting n radial lines which are radially arranged at the center O of a circular deformation area of the flat diaphragm in series end to end, the resistors R2 and R3 are formed by connecting m tangential lines which are arranged around the center O in series end to end, and the resistors R1, R4, R2 and R3 are symmetrically arranged relative to the center O. The pressure sensor can ensure that the sensitivity of the sensor meets the design requirement, has strong anti-surge capacity and good dynamic signal sensing capacity, and realizes accurate bridge balance; the layout optimization method can finely adjust the layout and ensure that the layout meets the requirement of bridge balance.
Description
Technical Field
The invention relates to a thin film resistance strain pressure sensing technology, in particular to a thin film resistance strain pressure sensor and a layout optimization method thereof.
Background
Sensor technology, communication technology and computer technology constitute three major pillars of modern information. They respectively complete the information extraction, information transmission and information processing of the measured information, and are an important component of the scientific and technical development of the present generation. The sensor converts environmental signals such as sensed force, heat, light, magnetism, sound, humidity and the like into electric signals so as to carry out the next analysis and processing, is a main way and means for acquiring information in the natural field, and is an information source of the technology of the internet of things.
While the sensor technology is widely applied in important fields such as industrial automation, military and national defense, and advanced science and engineering represented by universe development and ocean development, it is permeating towards aspects closely related to people's life with its own great potential; sensors in bioengineering, medical care, environmental protection, safety precaution, home appliances, network home, etc. have emerged endlessly and are being developed in the future.
In recent years, MEMS sensors have been developed with a different army bump. With the gradual maturity of the integrated micro-electronic mechanical processing technology, the MEMS sensor introduces the semiconductor processing technology such as oxidation, photoetching, diffusion, deposition, etching and the like into the production and the manufacturing of the sensor, and sufficiently fuses the microsystem processing and microstructure analysis technology with the semiconductor device processing technology, the new material technology and the like, thereby realizing the large-scale production and providing an important technical support for the miniaturization development of the sensor. Compared with the traditional sensor, the sensor has the characteristics of small volume, light weight, low cost, low power consumption, high reliability, suitability for batch production, easiness in integration and realization of intellectualization. At the same time, feature sizes on the order of microns make it possible to perform functions that some conventional mechanical sensors cannot achieve.
The pressure sensor is one of the most widely applied sensors, and is an essential core component in the fields of aerospace, oil exploration, factory facilities, engineering machinery, automobile electronics and the like. A pressure sensor typically includes a sensing element, a transducing element, and a signal modulation module. The conversion element mostly adopts a Wheatstone bridge, and the sensitive element deforms under the action of pressure to cause the resistance value of the Wheatstone bridge to change, so that the Wheatstone bridge becomes unbalanced and an electric signal is output.
The thin film resistance strain pressure sensor receives more and more attention due to its excellent performance, and it usually uses a circular elastic diaphragm as a sensing element, directly sputters a metal thin film on the elastic diaphragm, and then makes into a resistor by photolithography and other techniques, and the resistor is used as a conversion element. According to the principle of material mechanics, the stress and strain of different areas of the flat diaphragm are different, so that the layout of the resistance wire is very important, and the sensitivity of the sensor is directly influenced.
The demand for sensor miniaturization is more and more strong, and the development of the MEMS technology also provides technical support for sensor miniaturization, but simultaneously, the layout space left for the wheatstone bridge on the elastic diaphragm is very narrow. Therefore, increasingly higher requirements are put on the layout of the resistance wires. However, in many existing layout schemes, the strain of the flat diaphragm is not reasonably analyzed and utilized, and the resistance wire is not reasonably routed, so that the sensitivity of the sensor is not high. Meanwhile, in the existing scheme, the transition connection between resistance wires mostly adopts simple corners, however, impedance mutation, parasitic capacitance inductance and the like exist in the corners, signal reflection can occur when dynamic signals are detected, and the sensor chip is poor in electromagnetic compatibility and antistatic discharge and surge current capacity.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: aiming at the problems in the prior art, the invention provides the film resistance strain pressure sensor and the layout optimization method thereof, the film resistance strain pressure sensor can ensure that the sensitivity of the sensor meets the design requirement, has strong anti-surge capacity and good dynamic signal sensing capacity, and realizes accurate bridge balance; the layout optimization method can finely adjust the layout and ensure that the layout meets the requirement of bridge balance.
In order to solve the technical problems, the invention adopts the technical scheme that:
a film resistance strain pressure sensor comprises a flat diaphragm and a film-shaped sensitive circuit arranged on the flat diaphragm, wherein the sensitive circuit comprises four resistors R1-R4 which are connected end to form a Wheatstone bridge, the resistor R1 and the resistor R4 are formed by connecting n radial lines in series, wherein the n radial lines are radially arranged at the center O of a circular deformation area of which the extension line passes through the flat diaphragm in an end-to-end manner, the resistor R2 and the resistor R3 are formed by connecting m tangential lines arranged around the center O in series in an end-to-end manner, and the resistor R1, the resistor R4, the resistor R2 and the resistor R3 are symmetrically arranged relative to the center O.
Optionally, the resistor R1 and the resistor R4 are arranged outside the circular region where the resistor R2 and the resistor R3 are located.
Optionally, the distances between the m tangential lines and the circle center O are arranged in an equal difference manner, and two ends of the m tangential lines are connected in series end to end through semicircular arcs.
Optionally, the inner end points of the n radial lines are located on an inner circle Cn with the center O as the center, the outer end points are located on an outer circle Cw with the center O as the center, and the inner sides of the n radial lines are connected in series end to end through y inner circular arc lines and the outer sides of the n radial lines are connected in series through v outer circular arc lines.
Optionally, the flat film is further provided with pads connected to intermediate junctions between any two adjacent resistors among the resistors R1 to R4, the four pads are distributed on a circumference with a center O as a center, a lead bridge is arranged between any two adjacent resistors among the resistors R1 to R4, any two adjacent resistors among the resistors R1 to R4 are connected to the pads through the lead bridge, and an acute angle or a right angle at which any resistor among the resistors R1 to R4 is connected to the lead bridge is provided with a smooth transition arc.
In addition, the invention also provides a layout optimization method of the thin film resistance strain pressure sensor, which comprises the following steps of carrying out layout optimization on the resistor R1 or the resistor R4:
1) respectively calculating the equivalent lengths of the v outer circular arc lines, and summing to obtain the total equivalent length L of the outer circular arc linesU；
2) According to the total equivalent length LUCalculating the initial radius R of the inner circle Cn0n, setting the iteration times i to be 0;
3) radius R of inner circle Cn obtained for ith iterationin, corrected to obtain radius R of the (i + 1) th timei+1n；
4) Calculating the radius R of the inner circle Cn obtained at the ith timein, radius R of (i + 1) < th > timei+1n, if the absolute value of the difference is less than a preset threshold gamma, the radius R of the (i + 1) th time is determinedi+1n is taken as the final radius of the inner circle Cn, and the operation is finished and quitted; otherwise, adding 1 to the iteration times i, and jumping to execute the step 3).
Optionally, when the equivalent length of v outer circular arc lines is calculated in step 1), the step of calculating the equivalent length of any outer circular arc line Ui includes: the outer circular arc line Ui is equal to the same widthfConcentric arcs of circumference, according to parameter inner edge radiusr n Width, widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k Is composed ofr k =r n +(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the middle dividing line and the radian of the outer arc line UiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k =r k ×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofAnd calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui.
Optionally, the said according tofThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui comprises the following steps: step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aThe length of the 1 st concentric arc corresponding to the middle branch lineL 1 (ii) a Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followskEquivalent of 1 iterationThe length of the first and second support members,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs; step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the outer arc line Ui.
Optionally, the step 2) is based on the total equivalent length LUCalculating the initial radius R of the inner circle Cn0The functional expression of n is:
R0n = ( L1 R -LU-n×Rw)/(sin(α/2)×π/2×y - n)
in the above formula, R0n is the initial radius of the inner circle Cn, alpha is the included angle between adjacent radial lines, y is the number of inner circular arc lines, n is the number of radial lines, Rw is the radius of the outer circle Cw, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outside circular arc line.
Optionally, the radius R of the (i + 1) th time is obtained by correction in the step 3)i+1The functional expression of n is:
Ri+1n = (n×Rw - (L1 R-LU –(n× Lix)))/n
in the above formula, n is the number of radial lines, Rw is the radius of the outer circle Cw, Ri+1n is the radius of the i +1 th time of the inner circle Cn, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outer circular arc line, Lix is the radius R according to the ith orderin is determined as the equivalent length of a single inner circular arc line and is determined according to the radius R of the ith timein, the step of determining the equivalent length of the single inner circular arc line Xi comprises the following steps: the inner circular arc lines Xi are equal to each other in widthfThe strips are concentric circular arcs according tor n ′= Rin - W/ 2Calculating the radius of the inner edger n ', according to the inner edge radiusr n ', widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k ' isr k ′= r n ′+(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the median line and the radian of the inner arc line XiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k = r k ′×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofCalculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi according to the equivalent length of the concentric circular arcsfThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi comprises the following steps: step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aThe length of the 1 st concentric arc corresponding to the middle branch lineL 1 (ii) a Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followsk-the equivalent length obtained for 1 iteration,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs; step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the inner circular arc line Xi.
Compared with the prior art, the invention has the following advantages:
the sensitive circuit of the film resistance strain pressure sensor comprises four resistors R1-R4 which are connected end to form a Wheatstone bridge, wherein the resistor R1 and the resistor R4 are formed by connecting n radial lines which are radially arranged by extending lines passing through the circle center O of a circular deformation area of a flat diaphragm end to end in series, the resistor R2 and the resistor R3 are formed by connecting m tangential lines which are arranged around the circle center O in series end to end, the resistor R1, the resistor R4, the resistor R2 and the resistor R3 are symmetrically arranged relative to the center O, through the structural design, the resistor R1 and the resistor R4 can realize radial strain sensitivity, the resistor R2 and the resistor R3 can realize tangential strain sensitivity, the combination of radial and tangential strain sensitivity is realized, the sensitivity of the sensor can be ensured to meet the design requirement, the anti-surge capacity is strong, the dynamic signal sensing capacity is good, and accurate equivalent resistance calculation can be realized.
Aiming at the defect of layout optimization of the radial strain sensitive resistor, the layout optimization method of the thin film resistance strain pressure sensor firstly calculates the equivalent lengths of v outer arc lines respectively, and sums to obtain the total equivalent length L of the outer arc linesUAccording to the total equivalent length LUCalculating the initial radius R of the inner circle Cn0n, setting the iteration times i to be 0; then the radius R of the inner circle Cn obtained for the ith iterationin, corrected to obtain radius R of the (i + 1) th timei+1n; if the radius R of the inner circle Cn obtained at the ith timein, radius R of (i + 1) < th > timei+1The radius R of the (i + 1) th time is determined when the absolute value of the difference between n is less than the preset threshold value gammai+1And n is used as the final radius of the inner circle Cn, otherwise, the iteration is continued. According to the invention, the layout iteration optimization is carried out on the radial strain sensitive resistor, so that the layout of the resistance wire can be finely adjusted, and the product layout can be ensured to meet the sensitivity requirement of design and the requirement of bridge balance.
Drawings
Fig. 1 is a schematic front view of a thin film resistance strain pressure sensor according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a partial enlarged structure of the resistor R1 according to the embodiment of the invention.
Fig. 3 is a schematic diagram of a partial enlarged structure of the resistor R2 and the resistor R3 according to an embodiment of the invention.
Fig. 4 is a flow chart of layout optimization of the resistor R1 and the resistor R4 according to the embodiment of the present invention.
Fig. 5 is a schematic diagram of the division when calculating the equivalent length of the outer/inner circular arc line in the embodiment of the present invention.
Fig. 6 is a schematic diagram of dividing resistance calculation at the smooth transition arc in the embodiment of the present invention.
Detailed Description
The technical problem to be solved by the invention is as follows: firstly, the size and the direction of strain at each position of a sensitive deformation area on a pressure sensor chip can be changed, the sensitivity of the sensor can not meet the design requirement due to simple linear wiring and corner connection, and meanwhile, the problems of poor surge resistance, poor dynamic signal sensing capability and the like exist; secondly, the layout of the sensor chip is different from the layout of a common digital chip or a digital circuit, some irregular areas and transition connecting lines exist, and how to accurately calculate the equivalent resistance of the parts is also the technical problem to be solved by the invention.
As shown in fig. 1, the thin film resistance strain pressure sensor of this embodiment includes a flat diaphragm 1 and a thin film-shaped sensitive circuit disposed on the flat diaphragm 1, and is characterized in that the sensitive circuit includes four resistors R1-R4 connected end to form a wheatstone bridge, the resistor R1 and the resistor R4 are formed by connecting end to end n radial lines extending across a center O of a circular deformation region of the flat diaphragm 1 and radially disposed, the resistor R2 and the resistor R3 are formed by connecting end to end m tangential lines disposed around the center O, and the resistor R1, the resistor R4, the resistor R2, and the resistor R3 are symmetrically disposed with respect to the center O. The flat diaphragm 1 is an elastic strain component for pressure, and is generally made of metal. According to the mechanical model of the flat diaphragm 1, under the action of the detected object, the strain of the flat diaphragm 1 comprises radial and tangential strains, so that in order to fully realize the radial and tangential strains of the flat diaphragm 1, the resistor R1 and the resistor R4 can realize radial strain sensitivity, the resistor R2 and the resistor R3 can realize tangential strain sensitivity, the combination of the radial and tangential strain sensitivity is realized, the sensitivity of the sensor can be ensured to meet the design requirement, the surge resistance is strong, the dynamic signal sensing capability is good, and accurate equivalent resistance calculation can be realized.
Experiments show that the tangential strain of the flat diaphragm 1 is mainly concentrated at the center O, and therefore, in order to improve the detection accuracy of the tangential strain, as shown in fig. 1, the resistor R1 and the resistor R4 are arranged outside the circular region where the resistor R2 and the resistor R3 are located, so as to ensure that the sensitivity of the sensor meets the design requirement.
As shown in fig. 1 and 3, in the embodiment, the distances between the m tangential lines and the circle center O are arranged in an equal difference manner, and two ends of the m tangential lines are connected in series end to end through semicircular arcs. As shown in fig. 3, a first tangential line k1 and an mth tangential line km of the m tangential lines k 1-km are respectively connected with corresponding lead bridges through an arc section and a straight line section as connection terminals at two ends of the resistance wire, a first tangential line k1 of a resistor R2 as marked in fig. 3 is connected with the corresponding lead bridges through an arc section a2_ w and a straight line section L2_ w, and the mth tangential line km is connected with the corresponding lead bridges through an arc section a2_ n and a straight line section L2_ n. By the design, the detection sensitivity of the thin film resistance strain pressure sensor can be effectively improved, and the anti-surge capacity, the dynamic signal sensing capacity and the like are improved.
As shown in fig. 1 and fig. 2, in this embodiment, the inner end points of the n radial lines are located on the inner circle Cn with the center O as the center, the outer end points are located on the outer circle Cw with the center O as the center, and the inner sides of the n radial lines are connected in series end to end through the y inner arc lines and the outer sides through the v outer arc lines. The n radial lines are respectively marked as radial lines j 1-jn, v outer arc lines U1-Uv are arranged on the outer sides of the n radial lines j 1-jn, y inner arc lines X1-Xy are arranged on the inner sides of the n radial lines j 1-jn, and the n radial lines j 1-jn are connected in series end to end through the outer arc lines U1-Uv and the inner arc lines X1-Xy to form a resistor R1 or a resistor R4.
For convenience of wiring, in the present embodiment, as shown in fig. 1, the flat diaphragm 1 is further provided with pads 2 connected to intermediate contacts between any two adjacent resistors among the resistors R1 to R4, respectively, and the four pads 2 are distributed on a circumference centered on the center O, so that the influence on the elastic modulus of the flat diaphragm 1 can be reduced.
As shown in fig. 1, the chip attachment includes three parts, the first part being 4 pincer-shaped lead bridges 3 connected to the resistors, the second part being 4 pads 2, and the third part being 4 leads connecting the lead bridges to the pads.
In order to solve the above technical problems, as shown in fig. 1, in this embodiment, a smooth transition arc 31 is disposed at an acute angle or a right angle where any one of resistors R1 to R4 is connected to a lead bridge 3, so that the detection sensitivity of the thin film resistance strain pressure sensor can be effectively improved, and the anti-surge capability and the dynamic signal sensing capability are improved. For example, J1_1 and J1_2 marked in fig. 2 are smooth arc transition sections 31 provided at the edges of the connection between the two ends of the resistor R1 and the lead bridge, and J2_1 and J2_2 marked in fig. 3 are smooth arc transition sections 31 provided at the edges of the connection between the two ends of the resistor R2 and the lead bridge.
Referring to fig. 2, the R1 and R4 resistance wires are routed in a radial direction, and include n radial lines, and n must be an even number, which is denoted as j1 and j2... jn, respectively. The starting point of the radial line is located on a circle Cn, where Cn is centered at O and has a radius Rn, and the ending point of the radial line is located on a circle Cw, where Cw is centered at O and has a radius Rw. The radial lines are connected through arcs, and the radial lines are connected in series to form resistance wires, wherein the arc connecting the end points of the radial lines is recorded as U1... Uv, and the arc connecting the starting points of the radial lines is recorded as X1... Xy. Radial lines on two sides of the R1 extend towards the center O and are respectively connected with the lead bridge, the connection points are marked as J1_1 and JI _2, and acute angles of the connection points J1_1 and J1_2 are smoothed through circular arcs. Radial lines on two sides of the R4 extend towards the center O and are respectively connected with the lead bridge, the connection points are marked as J4_1 and J4_2, and acute angles of the connection points J4_1 and J4_2 are smoothed through arcs. Referring to fig. 3, the R2 and R3 resistance wires are routed tangentially, including m tangential wires, and m must be an odd number. The circle centers of the m tangential lines are all O, the radiuses are in an arithmetic series, and the tangential lines are connected with each other through arcs, so that the tangential lines are connected in series to form a resistance wire. The outermost tangential line of R2 is connected with the lead bridge through a circular arc A2_ w and a straight line L2_ w, the innermost tangential line is connected with the lead bridge through a circular arc A2_ n and a straight line L2_ n, the connection points are marked as J2_1 and J2_2, and the right angles of the connection points J2_1 and J2_2 are smoothed through circular arcs. The outermost tangential line of R3 is connected with the lead bridge through a circular arc A3_ w and a straight line L3_ w, the innermost tangential line is connected with the lead bridge through a circular arc A3_ n and a straight line L3_ n, the connection points are marked as J3_1 and J3_2, and the right angles of the connection points J3_1 and J3_2 are smoothed through circular arcs.
On the basis, the layout optimization method of the film resistance strain pressure sensor provides a calculation method of equivalent resistance for the design of an arc transition line and an irregular flat slider adopted by a radial strain sensitive resistor, and provides a layout optimization algorithm on the basis to finely adjust the layout of resistance wires.
As shown in fig. 4, the present embodiment further provides a layout optimization method of the thin film resistive strain pressure sensor, including the step of performing layout optimization on the resistor R1 or the resistor R4:
1) respectively calculating the equivalent lengths of the v outer circular arc lines, and summing to obtain the total equivalent length L of the outer circular arc linesU；
2) According to the total equivalent length LUCalculating the initial radius R of the inner circle Cn0n, setting the iteration times i to be 0;
3) radius R of inner circle Cn obtained for ith iterationin, corrected to obtain radius R of the (i + 1) th timei+1n；
4) Calculating the radius R of the inner circle Cn obtained at the ith timein, radius R of (i + 1) < th > timei+1n, if the absolute value of the difference is less than a preset threshold gamma, the radius R of the (i + 1) th time is determinedi+1n is taken as the final radius of the inner circle Cn, and the operation is finished and quitted; otherwise, adding 1 to the iteration times i, and jumping to execute the step 3).
When the resistance wire is arc-shaped, the lengths of the inner side and the outer side of the resistance wire are not consistent. In the precision sensor chip, the length of the arc center line cannot be simply taken as the length of the resistance wire. Therefore, in the method of the embodiment, for the above problem, a finite element method is adopted to calculate the equivalent length of the arc resistance wire. In this embodiment, the step 1) of calculating the equivalent length of each of the outer circular arc lines U1 to Uv respectively means that any outer circular arc line Ui is taken as a target circular arc line,when the equivalent length of v outer circular arc lines is calculated in the step 1), the calculation step aiming at the equivalent length of any outer circular arc line Ui comprises the following steps: the outer circular arc line Ui is equal to the same widthfConcentric arcs of circumference, according to parameter inner edge radiusr n Width, widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k Is composed ofr k =r n +(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the middle dividing line and the radian of the outer arc line UiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k =r k ×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofAnd calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui.
As shown in fig. 5, the outer circular arc line Ui is equal to the same widthfThe concentric arcs of the bars, denoted d1, d 2.., di., df, respectively, each have the same arc and width, and the length of each aliquot is replaced by an approximation of the length of the line zi therein. And then sequentially calculating d 1-dn according to an equivalent circuit updating formula F1 to obtain the equivalent length of the arc resistance wire.
Update formula F1 is as follows:
Lia = (Li-1a × Li)/(Li-1a + Li)
wherein L isia is the updated equivalent resistance wire length Li-1a is the length of the equivalent resistance wire before updating, and Li is the length of di added into the updating operation at present.
In this example, according tofThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui comprises the following steps:
step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aThe length of the 1 st concentric arc corresponding to the middle branch lineL 1 ；
Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followsk-the equivalent length obtained for 1 iteration,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs;
step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the outer arc line Ui.
In this embodiment, a process of calculating the equivalent length of the target arc line is denoted as ProcessA, and the specific steps are as follows:
and A1, obtaining the camber value A and the line width value W of the target arc line. Setting the radius of the inner arc line of the target arc line as rnRadius r of the outer arcw= rn + W。
Step A2, divide the line width value W intofIs divided into equal parts to formfA concentric arc, denoted d1, d 2., di., df, any of the firstiThe width of the concentric arcs di is W-f。
Step a3, calculate the length of all aliquots d1... df:
step a3.1, calculate the length of d1. Radius of inner line of arc d1 isr n And the radius of the outside line of d1 isr n + W/f, length of d1L 1 = (r n +W/2f) ×A。
Step a3.2, calculating the lengths of d2 to df in sequence according to the method of step a3.1, respectively:
L 2 = (r n +3W/2f) ×A
L f = (r n +W×(2f-1)/2f) ×A
can be represented by the general formula:L k =r k ×A
and step A4, iteratively calculating the equivalent length of the resistance wire.
Step A4.1, initializing equivalent length: l is1a = L 1 。
Step A4.2,L 2 a = (L 1 a×L 2 )/(L 1 a + L 2 )
Step A4.3, analogous to step A4.2, according to the formula (L i-1 a×L i )/( L i-1 a+L i ) Iterative calculation of resistance wire equivalent lengthL i aWherein i is more than or equal to 3 and less than or equal tof。
Step A4.4, and comparing the final result obtained in step A4.3L i a × fAs the equivalent length of the final resistance wire.
The lengths of Uv were calculated U1... Uv, respectively, as L, using the method described by ProcessA in the order1 U...Lv U. Then, i.e. according to LU= L1 U +...+ Lv UCalculating to obtain the total equivalent length L of the outer arc lineU。
For the resistance wires R1 and R4, the positions of their layouts need to be determined. In the present embodiment, the radius of the circle Cw in which the radial line end point is located, the angle α between the radial lines, and the total equivalent length L of R1 are previously defined1 R. At this time, the radius of the circle Cn where the radial line starts needs to be determined. In this embodiment, steps 1) to 3) adopt an iterative approximation method to determine the Cn radius, and the iterative calculation process is denoted as process c.
In this embodiment, the step 2) is performed according to the total equivalent length LUCalculating the initial radius of the inner circle CnR0The functional expression of n is:
R0n = (L1 R -LU-n×Rw)/(sin(α/2)×π/2×y - n)
in the above formula, R0n is the initial radius of the inner circle Cn, alpha is the included angle between adjacent radial lines, y is the number of inner circular arc lines, n is the number of radial lines, Rw is the radius of the outer circle Cw, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outside circular arc line. The derivation of the above equation is as follows:
let Cn be radius R0n: step C2.1, the radial line length can be calculated: first, the length L of the radial line j1 is calculated1j = Rw-R0A total length of n, n radial lines is Lj = n × L1j = n × (Rw-R0n); and C2.2, calculating the length of the inner circular arc line X1... Xy. First, the radius of the inner circular arc X1 is calculated, and the radius is approximately calculated as R0n × sin (α/2). The length of the inner arc X1 is then calculated and approximated as (R)0n × sin (α/2). times.π/2. Calculate the total length of the outer arc, approximately R0n × sin (α/2). times.π/2 × y. Step C2.3, according to the total equivalent length L of the radial strain sensitive resistor1 RMinus the total equivalent length L of the outer circular arc lineUThe initial radius R of the inner circle Cn can be solved by obtaining the total length of the outer circular arc0n。
In this embodiment, the radius R of the (i + 1) th time is obtained by the correction in the step 3)i+1The functional expression of n is:
Ri+1n = (n×Rw - (L1 R-LU–(n× Lix)))/n
in the above formula, n is the number of radial lines, Rw is the radius of the outer circle Cw, Ri+1n is the radius of the i +1 th time of the inner circle Cn, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outer circular arc line, Lix is the radius R according to the ith orderin the equivalent length of a single inner circular arc line.
Wherein the radius R according to the ith orderin single inner circleThe step of the equivalent length of the arc Xi comprises: the inner circular arc lines Xi are equal to each other in widthfThe strips are concentric circular arcs according tor n ′= Ri+1n - W/2Calculating the radius of the inner edger n ', according to the inner edge radiusr n ', widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k ' isr k ′= r n ′+(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the median line and the radian of the inner arc line XiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k = r k ′×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofAnd calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi.
Wherein, according tofThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi comprises the following steps:
step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aThe length of the 1 st concentric arc corresponding to the middle branch lineL 1 ；
Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followsk-the equivalent length obtained for 1 iteration,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs;
step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the inner circular arc line Xi.
Taking i =1 as an example, the derivation procedure of the above equation is as follows: suppose the radius R of the inner circle Cn obtained by the 0 th calculation0n, radius R of inner circle Cn obtained by aiming at 0 th calculation0n is corrected to obtain the radius R after the 1 st correction1n is the same as the formula (I). Step C3.1, the radial line length can be calculated: first, the length L of the radial line j1 is calculated1j = Rw-R0A total length of n, n radial lines is Lj = n × L1j = n × (Rw-R1n); and C3.2, calculating the length of the inner circular arc line X1... Xy. First, the radius of the inner circular arc X1 is calculated, and the radius is approximately calculated as R0n × sin (α/2). The length of the inner arc X1 is then calculated and approximated as (R)0n × sin (α/2). times.π/2. Calculating the equivalent length of the inner arc X1 (taking it as the target arc as described in ProcessA, and calculating the equivalent length of the target arc by steps 1.1) to 1.2)), calculating the total length of the outer arc, and approximating it to n × Lix. Step C3.3, according to the total equivalent length L of the radial strain sensitive resistor1 RMinus the total equivalent length L of the outer circular arc lineUAnd total length of outer arc n × Lix obtains the total length of n radial lines to solve the radius R after the 1 st correction1n is the same as the formula (I). In this embodiment, the radius R of the inner circle Cn obtained by the ith calculation is determined in step 4)in, radius R after i-th correctioni+1The functional expression of the absolute value of the difference between n is: | Rin-Ri+1n|<γWherein the predetermined threshold γ is a predetermined small value. For example, after solving for the radius R after the 1 st correction1After n, if the termination condition is not met, let R0n=R1n (updating the current radius value of Cn), and returning to continue correcting; if so, the correction value R is added1n is taken as the final radius value of Cn, terminated and exited.
In addition, the layout optimization method of the thin film resistance strain pressure sensor of the present embodiment further includes a calculation step of the equivalent resistance for the smooth arc transition section 31. As shown in FIG. 6, the arc transition section 31 is composed of three straight sides (H1, H2, H3, L length respectively)H1、LH2、LH3) And a radius of rhAnd the arc edge with the radian pi/4 (namely the arc transition section 31, recorded as H4). The constraint conditions are as follows: l isH1+rh≤LH2，rh≤LH3，H1//H2。
In the present embodiment, in order to calculate the equivalent resistance of the smooth arc transition section 31, the arc transition section 31 is divided into H equal parts, which are respectively denoted as e1, e 2. Then carrying out equivalent calculation on e1 to eh in sequence to obtain the equivalent length of the smooth arc transition section 31, and marking the process as ProcessB, wherein the process comprises the following steps:
step B1, obtaining the lengths L of three straight line edges of the arc transition section 31H1、LH2、LH3And radius r of the circular arc edgeh. The distance L between the parallel sides H1 and H2 is obtained by measurementH. The line width of the resistance wire is W.
And step B2, dividing the arc transition section 31 into H equal parts e 1-eh in the direction perpendicular to the parallel sides H1 and H2.
And B3, calculating the equivalent length of all the equal divisions e 1-eh. The formula is as follows:
in the above formula, WiThe width of ei is divided into i equal parts, i is equal division number, rhIs the arc radius of the arc edge, h is an equal number, Lib is the equivalent length of the i-th half ei, LHThe distance between H1 and H2, and W is the line width of the resistance wire;
and step B4, calculating the equivalent length Lb of the whole circular arc transition section 31.
Wherein L isib is the equivalent length of the ith half ei.
In summary, the layout optimization method of the thin film resistance strain pressure sensor of the present embodiment can achieve the following beneficial effects: firstly, through a reasonable resistance wire layout scheme, the sensitivity of the Wheatstone bridge is effectively improved. And secondly, the full arc-shaped wiring improves the electromagnetic compatibility of the chip and prevents the interference of electrostatic discharge and surge current. And thirdly, signal reflection during signal transient is reduced, and dynamic signal sensing capability is improved. And fourthly, through equivalent calculation, the equivalent resistance of the irregular shape and the circular arc is accurately calculated, and the accuracy of resistance value design and evaluation is improved.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (10)
1. The thin-film resistance strain pressure sensor is characterized by comprising a flat diaphragm (1) and a thin-film sensitive circuit arranged on the flat diaphragm (1), wherein the sensitive circuit comprises four resistors R1-R4 which are connected end to form a Wheatstone bridge, the resistor R1 and the resistor R4 are formed by connecting n radial lines with extension lines passing through a circle center O of a circular deformation area of the flat diaphragm (1) in series end to end, the resistor R2 and the resistor R3 are formed by connecting m tangential lines around the circle center O in series end to end, and the resistor R1, the resistor R4, the resistor R2 and the resistor R3 are symmetrically arranged relative to the circle center O.
2. The thin film resistive strain pressure sensor of claim 1, wherein the resistor R1 and the resistor R4 are disposed outside a circular area in which the resistor R2 and the resistor R3 are located.
3. The thin film resistive strain pressure sensor of claim 1, wherein the m tangential lines are arranged with equal difference in distance from the center O, and the two ends of the m tangential lines are connected in series end to end by the semi-circular arcs.
4. The thin film resistive strain pressure sensor of claim 1, wherein the n radial lines each have an inner end point on an inner circle Cn centered at the center O and an outer end point on an outer circle Cw centered at the center O, and the n radial lines are connected end to end inside by y inner circular arc lines and outside by v outer circular arc lines.
5. The thin film resistive strain pressure sensor according to claim 1, wherein the flat diaphragm (1) is further provided with pads (2) connected to intermediate junctions between any two adjacent resistors among the resistors R1-R4, respectively, and four pads (2) are distributed on a circumference with a center O as a center, a lead bridge (3) is provided between any two adjacent resistors among the resistors R1-R4, any two adjacent resistors among the resistors R1-R4 are connected to the pads (2) through the lead bridge (3), and a smooth transition arc (31) is provided at an acute angle or a right angle where any resistor among the resistors R1-R4 is connected to the lead bridge (3).
6. The layout optimization method of the thin film resistive strain pressure sensor according to claim 4, comprising the step of performing layout optimization for the resistor R1 or the resistor R4:
1) respectively calculating the equivalent lengths of the v outer circular arc lines, and summing to obtain the total equivalent length L of the outer circular arc linesU；
2) According to the total equivalent length LUCalculating the initial radius R of the inner circle Cn0n, setting the iteration times i to be 0;
3) radius R of inner circle Cn obtained for ith iterationin, corrected to obtain radius R of the (i + 1) th timei+1n；
4) Calculating the radius R of the inner circle Cn obtained at the ith timein, radius R of (i + 1) < th > timei+1n, if the absolute value of the difference is less than a preset threshold gamma, the radius R of the (i + 1) th time is determinedi+1n is taken as the final radius of the inner circle Cn, and the operation is finished and quitted; otherwise, adding 1 to the iteration times i, and jumping to execute the step 3).
7. The layout optimization method of the thin film resistance strain pressure sensor according to claim 6, wherein when calculating the equivalent lengths of the v outer circular arc lines in step 1), the step of calculating the equivalent length of any outer circular arc line Ui includes: the outer circular arc line Ui is equal to the same widthfConcentric arcs of circumference, according to parameter inner edge radiusr n Width, widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k Is composed ofr k =r n +(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the middle dividing line and the radian of the outer arc line UiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k =r k ×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofAnd calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui.
8. The method of optimizing layout of a thin film resistive strain pressure sensor of claim 7, wherein the method is based onfThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the outer circular arc line Ui comprises the following steps: step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aIs the 1 st concentric arc pairLength of the central lineL 1 (ii) a Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followsk-the equivalent length obtained for 1 iteration,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs; step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the outer arc line Ui.
9. The layout optimization method of the thin film resistive strain pressure sensor according to claim 6, wherein the step 2) is performed according to the total equivalent length LUCalculating the initial radius R of the inner circle Cn0The functional expression of n is:
R0n = (L1 R -LU-n×Rw)/(sin(α/2)×π/2×y - n)
in the above formula, R0n is the initial radius of the inner circle Cn, alpha is the included angle between adjacent radial lines, y is the number of inner circular arc lines, n is the number of radial lines, Rw is the radius of the outer circle Cw, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outside circular arc line.
10. The layout optimization method of the thin film resistive strain pressure sensor according to claim 6, wherein the radius R of the i +1 th time obtained by the correction in the step 3)i+1The functional expression of n is:
Ri+1n = (n×Rw - (L1 R-LU –(n× Lix)))/n
in the above formula, n is the number of radial lines, Rw is the radius of the outer circle Cw，Ri+1n is the radius of the i +1 th time of the inner circle Cn, L1 RIs the total equivalent length of resistor R1 or resistor R4, LUIs the total equivalent length of the outer circular arc line, Lix is the radius R according to the ith orderin is determined as the equivalent length of a single inner circular arc line and is determined according to the radius R of the ith timein, the step of determining the equivalent length of the single inner circular arc line Xi comprises the following steps: the inner circular arc lines Xi are equal to each other in widthfThe strips are concentric circular arcs according tor n ′= Rin - W/2Calculating the radius of the inner edger n ', according to the inner edge radiusr n ', widthWDetermining the radius of the bisector of each concentric semi-circular arc, anykRadius of bisector of concentric arcsr k ' isr k ′= r n ′+(2k-1)W/2fWhereinkValue of 1 &fAccording to the radius of the median line and the radian of the inner arc line XiACalculating the length of the middle division line as the equivalent length of the corresponding concentric circular arc, and randomly selectingkLength of bisector of concentric arcsL k Is composed ofL k = r k ′×A(ii) a Will be provided withfThe concentric circular arcs of the strips being regarded as being parallelfA resistance according tofCalculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi according to the equivalent length of the concentric circular arcsfThe step of calculating the equivalent length of the concentric circular arcs to obtain the equivalent length of the inner circular arc line Xi comprises the following steps: step a: initializing iterative variableskIs 1; initializing equivalent lengthsL k aThe length of the 1 st concentric arc corresponding to the middle branch lineL 1 (ii) a Step b: will iterate variableskPlus 1, if the variable is iteratedkGreater than the number of concentric arcsfSkipping to execute the step c; otherwise, according toL k a=(L k-1 a×L k )/( L k-1 a+L k ) Calculate the firstkEquivalent length obtained by sub-iterationL k aWhereinL k-1 aIs as followsk-the equivalent length obtained for 1 iteration,L k is as followskC, returning to the step b for re-executing the length of the median line of the concentric arcs; step c: will be firstfEquivalent length obtained by sub-iterationL k aMultiplication byfAnd is output as the equivalent length of the inner circular arc line Xi.
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Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0831315A2 (en) * | 1996-09-19 | 1998-03-25 | Fujikoki Corporation | Pressure sensor |
| CN1203662A (en) * | 1995-12-04 | 1998-12-30 | 航空发动机的结构和研究公司 | Wheatstone bridge with temp. gradient compensation between main resistor of bridge and its application in pressure-sensor with foil gauge |
| CN101566514A (en) * | 2009-06-02 | 2009-10-28 | 中国航天科技集团公司第四研究院第四十四研究所 | Integrated temperature thin film pressure sensor |
| CN201600217U (en) * | 2009-12-24 | 2010-10-06 | 中国航天科技集团公司第六研究院第十一研究所 | High-temperature pressure sensor of palladium-chromium sputtering film |
| CN201707167U (en) * | 2010-05-18 | 2011-01-12 | 北京遥测技术研究所 | Ultralow-temperature diaphragm pressure/temperature compound sensor |
| CN102507053A (en) * | 2011-11-22 | 2012-06-20 | 蚌埠高灵传感系统工程有限公司 | Toughened glass pressure sensor |
| US8256306B1 (en) * | 2009-09-02 | 2012-09-04 | The Boeing Company | High-capacity low-profile load cell for measuring compression force |
| CN104034454A (en) * | 2014-06-13 | 2014-09-10 | 江苏多维科技有限公司 | Multi-physical measurement sensor chip and production method thereof |
| CN105021341A (en) * | 2015-08-18 | 2015-11-04 | 熊辉 | High-performance film pressure transducer |
| CN106248266A (en) * | 2016-07-18 | 2016-12-21 | 梁婵 | Resistance strain type sensor and the manufacture method thereof of processing is printed based on 3D |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| EP3201586A1 (en) * | 2014-10-02 | 2017-08-09 | Mersen Benelux BV | Pressure sensor containing mechanically deforming elements |
| CN207622684U (en) * | 2017-12-15 | 2018-07-17 | 陕西电器研究所 | Bonding interface stress and strain based on Sputtering Thinfilm Technology monitors microsensor |
| CN207649802U (en) * | 2017-12-22 | 2018-07-24 | 北京中航兴盛测控技术有限公司 | Elastomer strain film resistance |
| CN109238525A (en) * | 2018-08-28 | 2019-01-18 | 西安航天动力研究所 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
| CN110895130A (en) * | 2019-12-28 | 2020-03-20 | 中航电测仪器股份有限公司 | Diaphragm type strain gauge and optimization method thereof |
-
2020
- 2020-12-09 CN CN202011426884.9A patent/CN112484630B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1203662A (en) * | 1995-12-04 | 1998-12-30 | 航空发动机的结构和研究公司 | Wheatstone bridge with temp. gradient compensation between main resistor of bridge and its application in pressure-sensor with foil gauge |
| EP0831315A2 (en) * | 1996-09-19 | 1998-03-25 | Fujikoki Corporation | Pressure sensor |
| CN101566514A (en) * | 2009-06-02 | 2009-10-28 | 中国航天科技集团公司第四研究院第四十四研究所 | Integrated temperature thin film pressure sensor |
| US8256306B1 (en) * | 2009-09-02 | 2012-09-04 | The Boeing Company | High-capacity low-profile load cell for measuring compression force |
| CN201600217U (en) * | 2009-12-24 | 2010-10-06 | 中国航天科技集团公司第六研究院第十一研究所 | High-temperature pressure sensor of palladium-chromium sputtering film |
| CN201707167U (en) * | 2010-05-18 | 2011-01-12 | 北京遥测技术研究所 | Ultralow-temperature diaphragm pressure/temperature compound sensor |
| CN102507053A (en) * | 2011-11-22 | 2012-06-20 | 蚌埠高灵传感系统工程有限公司 | Toughened glass pressure sensor |
| CN104034454A (en) * | 2014-06-13 | 2014-09-10 | 江苏多维科技有限公司 | Multi-physical measurement sensor chip and production method thereof |
| EP3201586A1 (en) * | 2014-10-02 | 2017-08-09 | Mersen Benelux BV | Pressure sensor containing mechanically deforming elements |
| CN105021341A (en) * | 2015-08-18 | 2015-11-04 | 熊辉 | High-performance film pressure transducer |
| CN106248266A (en) * | 2016-07-18 | 2016-12-21 | 梁婵 | Resistance strain type sensor and the manufacture method thereof of processing is printed based on 3D |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| CN207622684U (en) * | 2017-12-15 | 2018-07-17 | 陕西电器研究所 | Bonding interface stress and strain based on Sputtering Thinfilm Technology monitors microsensor |
| CN207649802U (en) * | 2017-12-22 | 2018-07-24 | 北京中航兴盛测控技术有限公司 | Elastomer strain film resistance |
| CN109238525A (en) * | 2018-08-28 | 2019-01-18 | 西安航天动力研究所 | Metallic film type pressure-temperature compound sensor and preparation method thereof |
| CN110895130A (en) * | 2019-12-28 | 2020-03-20 | 中航电测仪器股份有限公司 | Diaphragm type strain gauge and optimization method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 高阳等: "基于弹性膜片的薄膜溅射式拉力传感器研究", 《传感技术学报》 * |
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