CN201707167U - Ultralow-temperature diaphragm pressure/temperature compound sensor - Google Patents
Ultralow-temperature diaphragm pressure/temperature compound sensor Download PDFInfo
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- CN201707167U CN201707167U CN2010201930842U CN201020193084U CN201707167U CN 201707167 U CN201707167 U CN 201707167U CN 2010201930842 U CN2010201930842 U CN 2010201930842U CN 201020193084 U CN201020193084 U CN 201020193084U CN 201707167 U CN201707167 U CN 201707167U
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Abstract
The utility model relates to a diaphragm type pressure/temperature compound sensor used in an ultralow temperature, which comprises a base, a sputtering diaphragm, an inner support, an adapter plate, a shell, a shielded cable and a plug, wherein the sputtering diaphragm consists of a diaphragm, an insulating layer, a strain resistor layer, a sensitivity/temperature self-compensating resistor and temperature-measuring resistor layer, an electrode layer and a protective layer, the strain area of the sputtering diaphragm is provided with four strain resistors which are connected to form a Wheatstone bridge, and the non-strain area of the sputtering diaphragm is provided with a sensitivity/temperature self-compensating resistor and a temperature-measuring resistor. The utility model can simultaneously acquire pressure signals and temperature signals under an ultralow-temperature environment, and is characterized by wide applicable temperature range and little sensitivity/temperature error.
Description
Technical field
The present invention relates to a kind of diaphragm pressure temperature complex sensor, particularly a kind of diaphragm type pressure and temp compound sensor that is used for ultra-low temperature surroundings.
Background technology
Along with the development of space flight general technical, the measurement requirement to ultra-low temperature surroundings downforce parameter and temperature parameter has been proposed.On the one hand, in order to improve the useful load of aerospacecraft, the integrated trend that becomes the sensor technology development.On the other hand, in order to satisfy the requirement of ultra-low temperature surroundings pressure measurement accuracy, require sensitivity temperature coefficient very little, and because the sensitivity temperature coefficient of alloy firm resistance in wide warm area scope of diaphragm pressure sensor is bigger, therefore cause sensor low-temperature measurement error bigger, need carry out self compensation the sensitivity temperature coefficient of pressure transducer.Present diaphragm pressure temperature complex sensor can't be used under ultra-low temperature surroundings.
The utility model content
Technology of the present utility model is dealt with problems and is: overcome the deficiencies in the prior art, provide a kind of diaphragm type pressure and temp compound sensor that is used for ultra-low temperature surroundings (liquid hydrogen or liquid oxygen etc.), by be implemented in the pressure parameter under the ultra-low temperature surroundings and the measurement of temperature parameter at the enterprising line sensitivity temperature self-compensation of diaphragm.
Technical solution of the present utility model is:
A kind of ultralow temperature diaphragm pressure temperature complex sensor, comprise pedestal, sputter diaphragm, inner support, card extender, shell, shielded cable and connector, sputter diaphragm and pedestal weld together, inner support one end and pedestal weld together, the other end and card extender are assembled together, the sputter diaphragm is connected with card extender by the spun gold electrical lead, shielded cable passes shell, one end is connected with card extender, the other end is connected with connector, described shell one end and inner support weld together, and the other end and shielded cable mount are together.Described sputter diaphragm comprises diaphragm, insulation course, electrostrictive strain resistance layer, electrode layer and protective seam from inside to outside, and described sputter diaphragm also comprises sensitivity temperature self compensation resistance and the temperature detecting resistance layer that is arranged between electrostrictive strain resistance layer and the electrode layer.
Described electrostrictive strain resistance layer comprises four strain resistor R1, R2, R3, the R4 that connects into Wheatstone bridge, and wherein R1 and R3 are distributed in the position near the strain regional center, and R2 and R4 are distributed in the position near the strain edges of regions.
Described sensitivity temperature self compensation resistance and temperature detecting resistance layer comprise sensitivity temperature self compensation resistance R c and temperature detecting resistance Rt, sensitivity temperature self compensation resistance R c and temperature detecting resistance Rt are distributed in and prop up edge regions admittedly, described sensitivity temperature self compensation resistance R c is connected in series to the input negative terminal of the Wheatstone bridge of four strain resistors compositions, and described temperature detecting resistance Rt draws signal by the electrode at resistance two ends.
Described strain zone is meant when sensor is under pressure, the zone of sputter diaphragm generation deformation, and the described edge regions of propping up admittedly is meant that when sensor is under pressure the zone of deformation does not take place the sputter diaphragm.
The utility model beneficial effect compared with prior art is:
(1) the utility model is by carrying out the self compensation of sensitivity temperature in the Wheatstone bridge of measuring at pressure parameter, improved the pressure parameter measuring accuracy, and pressure parameter measured and the temperature parameter measurement is integrated in one, for generally providing the pressure and temperature parameter of measurement environment, satisfy integrated requirement, reduce the load of overall system, temperature signal wherein also can offer the transducer amplifying circuit of postorder, carrying out the efficient temperature compensation for pressure survey provides parameter, thereby further improves the precision that the ultra-low temperature surroundings downforce is measured.
(2) the utility model compensates by the sensitivity temperature error to sensor, improved the measuring accuracy of sensor, because sensitivity temperature self compensation distribution of resistance is on diaphragm, make strain resistor and sensitivity temperature error compensation resistance can experience temperature at one time, compare like this with in the enterprising trip temperature compensation of subsequent conditioning circuit, temperature-responsive is fast, and compensation effect is good, the sensitivity temperature error of compensation back pressure transducer is little, and the pressure parameter that therefore can be used for the ultralow temperature medium is measured.
Description of drawings
Fig. 1 is the utility model ultralow temperature diaphragm pressure temperature complex sensor structural drawing;
Fig. 2 is the utility model sputtered film chip architecture figure;
Fig. 3 is strain resistor, sensitivity temperature self compensation resistance, the temperature detecting resistance distribution plan of the utility model sputter diaphragm;
Fig. 4 is a sensitivity temperature self compensation schematic diagram
Embodiment
As shown in Figure 1, the utility model comprises pedestal 1, sputter diaphragm 2, inner support 3, card extender 4, shell 5, shielded cable 6 and connector 7, sputter diaphragm 2 welds together with pedestal 1, inner support 3 one ends and pedestal 1 weld together, the other end and card extender 4 are assembled together, sputter diaphragm 2 is connected with card extender 4 by the spun gold electrical lead, shielded cable 6 passes shell 5, one end is connected with card extender 4, the other end is connected with connector 7, shell 5 one ends and inner support 3 weld together, and the other end and shielded cable 6 mounts are together.
Sputtered film chip architecture of the present utility model as shown in Figure 2; successively depositing insulating layer 221, electrostrictive strain resistance layer 222, sensitivity temperature self compensation resistance and temperature detecting resistance layer 223, electrode layer 224, protective seam 225,221 to 225 each layer film material are respectively SiO on diaphragm 21 to adopt the ion beam sputter depositing method
2, NiCr, Ni, Au, SiO
2Adopt photoetching process and ion beam etching technology to obtain the strain resistor figure, adopt photoetching process and etching process to obtain sensitivity temperature self compensation resistance and temperature detecting resistance figure and electrode pattern respectively.After insulation course 221 on the diaphragm 21, electrostrictive strain resistance layer 222, sensitivity temperature self compensation resistance and temperature detecting resistance layer 223, electrode layer 224 figures machine; adopt the ion beam sputtering process method again; in sputter diaphragm surface deposition SiO2 protective film 225; this can improve the anti humility performance of sensitive element; prevent electrostrictive strain resistance layer, sensitivity temperature self compensation resistance and the temperature detecting resistance layer is oxidized and pollute, help guaranteeing the long-time stability and the reliability of sensitive element.
Distribution of resistance of the present utility model as shown in Figure 3,4 strain resistor R1, R2, R3, R4 of sputter membrane surface are distributed in the strain zone, 2 strain zones that are distributed near the diaphragm center wherein, other 2 strain resistors are distributed in the marginal position in membrane strains zone.In order to improve sensitivity, resistance is the ring resistance grid in the strain resistor, and external resistance is a resistance grid radially.Sensitivity temperature self compensation resistance R c is distributed in diaphragm and props up admittedly on the edge regions, and the input negative terminal of the Wheatstone bridge of 4 strain resistors compositions is gone in series connection.Temperature detecting resistance Rt is distributed in diaphragm and props up on the edge regions admittedly, the influence of signal is not stressed, electrode by the resistance two ends is drawn signal, thereby obtain temperature signal output, offer the postorder processing of circuit, the method that R1, R2, R3, R4, Rc, Rt all can adopt membrane laser to repair accent is repaiied accent to resistance.
Circuit theory of the present utility model as shown in Figure 4,4 strain resistor R1, R2, R3, the R4 of sputter membrane surface form Wheatstone bridge, sensitivity temperature self compensation resistance R c is connected on the input negative terminal of Wheatstone bridge.
Principle of work of the present utility model: 4 strain resistor R1, R2, R3, R4 on the sputter diaphragm 2 are distributed in the strain zone of diaphragm, form Wheatstone bridge, deformation takes place in the strain zone after diaphragm is subjected to external pressure, Wheatstone bridge output changes thereupon, thereby being subjected to the zone of external pressure generation deformation, realization pressure measuring function, diaphragm become the strain zone; Sensitivity temperature self compensation resistance R c on the sputter diaphragm 2 is distributed in diaphragm and props up edge regions admittedly, is connected on the input negative terminal of Wheatstone bridge, is meant that diaphragm is subjected to the zone that after the external pressure deformation does not take place admittedly prop up edge regions.When temperature raises, the sensor output of non sensitivity temperature self-compensation increases with the rising of temperature, and the resistance of thermo-compensator Rc also increases, then the dividing potential drop effect of thermo-compensator Rc is equivalent to make in the bridge circuit actual in the bridge voltage reduction, thereby sensor output is reduced, play compensating action; Temperature detecting resistance Rt on the sputter diaphragm 2 is distributed in diaphragm and props up edge regions admittedly, by follow-up processing of circuit, realizes the temperature survey function.Because temperature detecting resistance and strain resistor coexist on the diaphragm, therefore sensor can be realized the synchro measure of pressure and temperature, consider the technological operation in the process of producing product, sensitivity temperature self compensation resistance R c and temperature detecting resistance Rt all adopt metal Ni and NiCr alloy two metal layers.
Claims (3)
1. ultralow temperature diaphragm pressure temperature complex sensor; comprise pedestal (1); sputter diaphragm (2); inner support (3); card extender (4); shell (5); shielded cable (6) and connector (7); sputter diaphragm (2) welds together with pedestal (1); inner support (3) one ends and pedestal (1) weld together; the other end and card extender (4) are assembled together; sputter diaphragm (2) is connected with card extender (4) by the spun gold electrical lead; shielded cable (6) passes shell (5); one end is connected with card extender (4); the other end is connected with connector (7); described shell (5) one ends and inner support (3) weld together; the other end and shielded cable (6) mount together; described sputter diaphragm (2) comprises diaphragm (21) from inside to outside; insulation course (221); electrostrictive strain resistance layer (222); electrode layer (224) and protective seam (225) is characterized in that: described sputter diaphragm (2) also comprises sensitivity temperature self compensation resistance and the temperature detecting resistance layer (223) that is arranged between electrostrictive strain resistance layer (222) and the electrode layer (224).
2. a kind of ultralow temperature diaphragm pressure temperature complex sensor according to claim 1, it is characterized in that: described electrostrictive strain resistance layer (222) comprises four strain resistor R1, R2, R3, the R4 that connects into Wheatstone bridge, wherein R1 and R3 are distributed in the position near the strain regional center, and R2 and R4 are distributed in the position near the strain edges of regions.
3. a kind of ultralow temperature diaphragm pressure temperature complex sensor according to claim 1, it is characterized in that: described sensitivity temperature self compensation resistance and temperature detecting resistance layer (223) comprise sensitivity temperature self compensation resistance R c and temperature detecting resistance Rt, sensitivity temperature self compensation resistance R c and temperature detecting resistance Rt are distributed in and prop up edge regions admittedly, described sensitivity temperature self compensation resistance R c is connected in series to the input negative terminal of the Wheatstone bridge of four strain resistors compositions, and described temperature detecting resistance Rt draws signal by the electrode at resistance two ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201930842U CN201707167U (en) | 2010-05-18 | 2010-05-18 | Ultralow-temperature diaphragm pressure/temperature compound sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201930842U CN201707167U (en) | 2010-05-18 | 2010-05-18 | Ultralow-temperature diaphragm pressure/temperature compound sensor |
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| CN201707167U true CN201707167U (en) | 2011-01-12 |
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| CN2010201930842U Expired - Lifetime CN201707167U (en) | 2010-05-18 | 2010-05-18 | Ultralow-temperature diaphragm pressure/temperature compound sensor |
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Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102815174A (en) * | 2011-06-07 | 2012-12-12 | 无锡华润安盛科技有限公司 | Pressure sensor, automobile tyre pressure monitoring system, and pressure sensor manufacturing method |
| CN104006735A (en) * | 2014-06-12 | 2014-08-27 | 智性科技南通有限公司 | Embedded type thick-film resistor strain sensor and manufacturing method of embedded type thick-film resistor strain sensor |
| CN104864838A (en) * | 2015-06-14 | 2015-08-26 | 安徽圣力达电器有限公司 | Novel strain meter |
| CN105074407A (en) * | 2013-03-27 | 2015-11-18 | Vega格里沙贝两合公司 | Capacitive pressure-measuring cell for measuring the pressure of a medium adjoining the measuring cell |
| CN105917204A (en) * | 2013-12-20 | 2016-08-31 | 恩德莱斯和豪瑟尔两合公司 | Capacitive pressure-measuring cell having at least one temperature sensor and pressure measurement method |
| CN105911108A (en) * | 2016-04-11 | 2016-08-31 | 西安交通大学 | Sensor for measuring ultra long period by using inclination angle change and conductive liquid |
| CN106248266A (en) * | 2016-07-18 | 2016-12-21 | 梁婵 | Resistance strain type sensor and the manufacture method thereof of processing is printed based on 3D |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| CN107621285A (en) * | 2017-10-17 | 2018-01-23 | 雷念程 | High temperature wide range pressure sensor and its manufacture method with temperature measurement function |
| CN108195502A (en) * | 2017-12-21 | 2018-06-22 | 中国电子科技集团公司第四十八研究所 | A kind of engine sensor |
| CN108267258A (en) * | 2018-02-12 | 2018-07-10 | 西安航天动力研究所 | A kind of big overload high-precision strain pressure transducer |
| CN108931314A (en) * | 2018-08-14 | 2018-12-04 | 中国电子科技集团公司第三十八研究所 | A kind of temperature, pressure integral sensor core and preparation method thereof |
| CN110466664A (en) * | 2018-05-11 | 2019-11-19 | 坎培诺洛有限公司 | It is provided with the bicycle assembly parts of temperature-compensating stress/strain sensor |
| DE102018117594A1 (en) * | 2018-07-20 | 2020-01-23 | Ifm Electronic Gmbh | Pressure measuring cell with temperature sensor and pressure measuring device with such a pressure measuring cell |
| CN111896876A (en) * | 2020-08-10 | 2020-11-06 | 昆山市和风清晖能源科技有限公司 | Ag-C-PDMS temperature and pressure sensor for monitoring running state of lithium battery |
| CN112484630A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Thin film resistance strain pressure sensor and layout optimization method thereof |
| CN112729661A (en) * | 2020-12-29 | 2021-04-30 | 北京金迈捷科技有限公司 | Ultralow temperature pressure sensor with temperature signal output function |
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
| US11377169B2 (en) | 2018-05-11 | 2022-07-05 | Campagnolo S.R.L. | Bicycle crankarm and related crankset |
| US11401002B2 (en) | 2018-05-11 | 2022-08-02 | Campagnolo S.R.L. | Bicycle crankarm having a stress/strain detector for a torque meter or a power meter, and methods for manufacturing and using the crankarm |
| CN115096348A (en) * | 2022-08-26 | 2022-09-23 | 成都晨电智能科技有限公司 | Full-bridge temperature drift compensation circuit and method and strain sensing system |
| CN115183918A (en) * | 2022-07-20 | 2022-10-14 | 无锡芯感智半导体有限公司 | Temperature compensation bridge balance structure suitable for MEMS pressure sensor |
| US11547004B2 (en) | 2018-05-11 | 2023-01-03 | Campagnolo S.R.L. | Bicycle component made of composite material and related manufacturing process |
| US11597469B2 (en) | 2018-05-11 | 2023-03-07 | Campagnolo S.R.L. | Bicycle crankarm provided with electric/electronic system |
| CN116337145A (en) * | 2023-02-22 | 2023-06-27 | 松诺盟科技有限公司 | Nano-film temperature and pressure composite sensor and preparation method and application thereof |
| CN117129114A (en) * | 2023-10-23 | 2023-11-28 | 无锡芯感智半导体有限公司 | High-precision pressure sensor with temperature compensation open loop bridge balance structure |
-
2010
- 2010-05-18 CN CN2010201930842U patent/CN201707167U/en not_active Expired - Lifetime
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102815174A (en) * | 2011-06-07 | 2012-12-12 | 无锡华润安盛科技有限公司 | Pressure sensor, automobile tyre pressure monitoring system, and pressure sensor manufacturing method |
| CN105074407B (en) * | 2013-03-27 | 2018-07-06 | Vega格里沙贝两合公司 | For measuring the capacitive pressure measuring cell of surrounding medium pressure |
| CN105074407A (en) * | 2013-03-27 | 2015-11-18 | Vega格里沙贝两合公司 | Capacitive pressure-measuring cell for measuring the pressure of a medium adjoining the measuring cell |
| CN105917204A (en) * | 2013-12-20 | 2016-08-31 | 恩德莱斯和豪瑟尔两合公司 | Capacitive pressure-measuring cell having at least one temperature sensor and pressure measurement method |
| CN105917204B (en) * | 2013-12-20 | 2019-08-27 | 恩德莱斯和豪瑟尔欧洲两合公司 | Capacitive pressure measuring unit at least one temperature sensor |
| CN104006735A (en) * | 2014-06-12 | 2014-08-27 | 智性科技南通有限公司 | Embedded type thick-film resistor strain sensor and manufacturing method of embedded type thick-film resistor strain sensor |
| CN104864838A (en) * | 2015-06-14 | 2015-08-26 | 安徽圣力达电器有限公司 | Novel strain meter |
| CN105911108A (en) * | 2016-04-11 | 2016-08-31 | 西安交通大学 | Sensor for measuring ultra long period by using inclination angle change and conductive liquid |
| CN106248266A (en) * | 2016-07-18 | 2016-12-21 | 梁婵 | Resistance strain type sensor and the manufacture method thereof of processing is printed based on 3D |
| CN106525264A (en) * | 2016-12-20 | 2017-03-22 | 中国航天空气动力技术研究院 | Sputtering thin film temperature-pressure composite sensor and manufacturing method thereof |
| CN107621285A (en) * | 2017-10-17 | 2018-01-23 | 雷念程 | High temperature wide range pressure sensor and its manufacture method with temperature measurement function |
| CN108195502A (en) * | 2017-12-21 | 2018-06-22 | 中国电子科技集团公司第四十八研究所 | A kind of engine sensor |
| CN108267258A (en) * | 2018-02-12 | 2018-07-10 | 西安航天动力研究所 | A kind of big overload high-precision strain pressure transducer |
| CN108267258B (en) * | 2018-02-12 | 2020-06-09 | 西安航天动力研究所 | Large-overload high-precision strain type pressure sensor |
| US11547004B2 (en) | 2018-05-11 | 2023-01-03 | Campagnolo S.R.L. | Bicycle component made of composite material and related manufacturing process |
| CN110466664A (en) * | 2018-05-11 | 2019-11-19 | 坎培诺洛有限公司 | It is provided with the bicycle assembly parts of temperature-compensating stress/strain sensor |
| US11597469B2 (en) | 2018-05-11 | 2023-03-07 | Campagnolo S.R.L. | Bicycle crankarm provided with electric/electronic system |
| US11377169B2 (en) | 2018-05-11 | 2022-07-05 | Campagnolo S.R.L. | Bicycle crankarm and related crankset |
| US11401002B2 (en) | 2018-05-11 | 2022-08-02 | Campagnolo S.R.L. | Bicycle crankarm having a stress/strain detector for a torque meter or a power meter, and methods for manufacturing and using the crankarm |
| US11577801B2 (en) | 2018-05-11 | 2023-02-14 | Campagnolo S.R.L. | Bicycle component provided with a temperature-compensated stress/strain sensor |
| DE102018117594A1 (en) * | 2018-07-20 | 2020-01-23 | Ifm Electronic Gmbh | Pressure measuring cell with temperature sensor and pressure measuring device with such a pressure measuring cell |
| CN108931314B (en) * | 2018-08-14 | 2019-11-15 | 中国电子科技集团公司第三十八研究所 | A kind of temperature, pressure integral sensor core and preparation method thereof |
| CN108931314A (en) * | 2018-08-14 | 2018-12-04 | 中国电子科技集团公司第三十八研究所 | A kind of temperature, pressure integral sensor core and preparation method thereof |
| CN111896876A (en) * | 2020-08-10 | 2020-11-06 | 昆山市和风清晖能源科技有限公司 | Ag-C-PDMS temperature and pressure sensor for monitoring running state of lithium battery |
| CN112484630A (en) * | 2020-12-09 | 2021-03-12 | 湖南启泰传感科技有限公司 | Thin film resistance strain pressure sensor and layout optimization method thereof |
| CN112729661B (en) * | 2020-12-29 | 2024-03-19 | 北京金迈捷科技有限公司 | Ultralow-temperature pressure sensor with temperature signal output |
| CN112729661A (en) * | 2020-12-29 | 2021-04-30 | 北京金迈捷科技有限公司 | Ultralow temperature pressure sensor with temperature signal output function |
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
| CN115183918A (en) * | 2022-07-20 | 2022-10-14 | 无锡芯感智半导体有限公司 | Temperature compensation bridge balance structure suitable for MEMS pressure sensor |
| CN115183918B (en) * | 2022-07-20 | 2024-07-02 | 无锡芯感智半导体有限公司 | Bridge balance structure with temperature compensation suitable for MEMS pressure sensor |
| CN115096348B (en) * | 2022-08-26 | 2022-11-22 | 成都晨电智能科技有限公司 | Full-bridge temperature drift compensation circuit and method and strain sensing system |
| CN115096348A (en) * | 2022-08-26 | 2022-09-23 | 成都晨电智能科技有限公司 | Full-bridge temperature drift compensation circuit and method and strain sensing system |
| CN116337145A (en) * | 2023-02-22 | 2023-06-27 | 松诺盟科技有限公司 | Nano-film temperature and pressure composite sensor and preparation method and application thereof |
| CN116337145B (en) * | 2023-02-22 | 2024-01-23 | 松诺盟科技有限公司 | Nano-film temperature and pressure composite sensor and preparation method and application thereof |
| CN117129114A (en) * | 2023-10-23 | 2023-11-28 | 无锡芯感智半导体有限公司 | High-precision pressure sensor with temperature compensation open loop bridge balance structure |
| CN117129114B (en) * | 2023-10-23 | 2024-01-26 | 无锡芯感智半导体有限公司 | High-precision pressure sensor with temperature compensation open loop bridge balance structure |
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Granted publication date: 20110112 |